JPS5323546A - Bias circuit - Google Patents

Bias circuit

Info

Publication number
JPS5323546A
JPS5323546A JP9768576A JP9768576A JPS5323546A JP S5323546 A JPS5323546 A JP S5323546A JP 9768576 A JP9768576 A JP 9768576A JP 9768576 A JP9768576 A JP 9768576A JP S5323546 A JPS5323546 A JP S5323546A
Authority
JP
Japan
Prior art keywords
mosfet
bias circuit
output stage
coltage
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9768576A
Other languages
Japanese (ja)
Inventor
Gichu Oota
Toru Sanbe
Shinichi Ohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9768576A priority Critical patent/JPS5323546A/en
Publication of JPS5323546A publication Critical patent/JPS5323546A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To correct the effect due to the temperature change by connecting between the gate and drain of MOSFET featuring similar characteristics to those of output stage MOSFET and by applying the coltage fall due to the constant current to the output stage MOSFET in the form of a bias voltage.
JP9768576A 1976-08-18 1976-08-18 Bias circuit Pending JPS5323546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9768576A JPS5323546A (en) 1976-08-18 1976-08-18 Bias circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9768576A JPS5323546A (en) 1976-08-18 1976-08-18 Bias circuit

Publications (1)

Publication Number Publication Date
JPS5323546A true JPS5323546A (en) 1978-03-04

Family

ID=14198821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9768576A Pending JPS5323546A (en) 1976-08-18 1976-08-18 Bias circuit

Country Status (1)

Country Link
JP (1) JPS5323546A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5587017U (en) * 1978-12-11 1980-06-16
US5477188A (en) * 1994-07-14 1995-12-19 Eni Linear RF power amplifier
JP2014096703A (en) * 2012-11-09 2014-05-22 Samsung R&D Institute Japan Co Ltd Bias circuit and amplifier using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5587017U (en) * 1978-12-11 1980-06-16
US5477188A (en) * 1994-07-14 1995-12-19 Eni Linear RF power amplifier
US5726603A (en) * 1994-07-14 1998-03-10 Eni Technologies, Inc. Linear RF power amplifier
JP2014096703A (en) * 2012-11-09 2014-05-22 Samsung R&D Institute Japan Co Ltd Bias circuit and amplifier using the same

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