JPS5316537A - High speed circuit for mos random access memory - Google Patents
High speed circuit for mos random access memoryInfo
- Publication number
- JPS5316537A JPS5316537A JP6456177A JP6456177A JPS5316537A JP S5316537 A JPS5316537 A JP S5316537A JP 6456177 A JP6456177 A JP 6456177A JP 6456177 A JP6456177 A JP 6456177A JP S5316537 A JPS5316537 A JP S5316537A
- Authority
- JP
- Japan
- Prior art keywords
- random access
- high speed
- access memory
- speed circuit
- mos random
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69173476A | 1976-06-01 | 1976-06-01 | |
US05/691,735 US4081701A (en) | 1976-06-01 | 1976-06-01 | High speed sense amplifier for MOS random access memory |
US05/716,843 US4077031A (en) | 1976-08-23 | 1976-08-23 | High speed address buffer for semiconductor memory |
US05/716,907 US4072932A (en) | 1976-08-23 | 1976-08-23 | Clock generator for semiconductor memory |
US05/748,790 US4110639A (en) | 1976-12-09 | 1976-12-09 | Address buffer circuit for high speed semiconductor memory |
US75180476A | 1976-12-16 | 1976-12-16 | |
US05/756,921 US4144590A (en) | 1976-12-29 | 1976-12-29 | Intermediate output buffer circuit for semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5316537A true JPS5316537A (en) | 1978-02-15 |
JPS5810799B2 JPS5810799B2 (en) | 1983-02-28 |
Family
ID=27569886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52064561A Expired JPS5810799B2 (en) | 1976-06-01 | 1977-06-01 | semiconductor storage device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5810799B2 (en) |
DE (1) | DE2724646A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53120237A (en) * | 1977-03-29 | 1978-10-20 | Mitsubishi Electric Corp | Semiconductor amplifier circuit |
JPS53120238A (en) * | 1977-03-29 | 1978-10-20 | Mitsubishi Electric Corp | Semiconductor amplifier |
JPS54158828A (en) * | 1978-06-06 | 1979-12-15 | Toshiba Corp | Dynamic type semiconductor memory device |
JPS5712484A (en) * | 1980-06-26 | 1982-01-22 | Mitsubishi Electric Corp | Differential amplifier |
JPH03228282A (en) * | 1990-10-26 | 1991-10-09 | Hitachi Ltd | Semiconductor memory |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4247791A (en) * | 1978-04-03 | 1981-01-27 | Rockwell International Corporation | CMOS Memory sense amplifier |
JPS5817998B2 (en) * | 1978-10-26 | 1983-04-11 | 富士通株式会社 | semiconductor memory |
DE2855118C2 (en) * | 1978-12-20 | 1981-03-26 | IBM Deutschland GmbH, 70569 Stuttgart | Dynamic FET memory |
JPS61110399A (en) * | 1984-11-05 | 1986-05-28 | Toshiba Corp | Data output circuit of dynamic memory |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3838295A (en) * | 1973-02-05 | 1974-09-24 | Lockheed Electronics Co | Ratioless mos sense amplifier |
JPS52123849A (en) * | 1976-04-09 | 1977-10-18 | Nec Corp | Amplifier circuit |
JPS5310938A (en) * | 1976-05-21 | 1978-01-31 | Western Electric Co | Senseerefresh detector |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5240937B2 (en) | 1972-05-16 | 1977-10-15 | ||
US3879621A (en) * | 1973-04-18 | 1975-04-22 | Ibm | Sense amplifier |
US3838404A (en) * | 1973-05-17 | 1974-09-24 | Teletype Corp | Random access memory system and cell |
US3940747A (en) * | 1973-08-02 | 1976-02-24 | Texas Instruments Incorporated | High density, high speed random access read-write memory |
US3959781A (en) | 1974-11-04 | 1976-05-25 | Intel Corporation | Semiconductor random access memory |
-
1977
- 1977-06-01 DE DE19772724646 patent/DE2724646A1/en active Granted
- 1977-06-01 JP JP52064561A patent/JPS5810799B2/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3838295A (en) * | 1973-02-05 | 1974-09-24 | Lockheed Electronics Co | Ratioless mos sense amplifier |
JPS52123849A (en) * | 1976-04-09 | 1977-10-18 | Nec Corp | Amplifier circuit |
JPS5310938A (en) * | 1976-05-21 | 1978-01-31 | Western Electric Co | Senseerefresh detector |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53120237A (en) * | 1977-03-29 | 1978-10-20 | Mitsubishi Electric Corp | Semiconductor amplifier circuit |
JPS53120238A (en) * | 1977-03-29 | 1978-10-20 | Mitsubishi Electric Corp | Semiconductor amplifier |
JPS54158828A (en) * | 1978-06-06 | 1979-12-15 | Toshiba Corp | Dynamic type semiconductor memory device |
JPS5712484A (en) * | 1980-06-26 | 1982-01-22 | Mitsubishi Electric Corp | Differential amplifier |
JPH03228282A (en) * | 1990-10-26 | 1991-10-09 | Hitachi Ltd | Semiconductor memory |
JPH0557677B2 (en) * | 1990-10-26 | 1993-08-24 | Hitachi Ltd |
Also Published As
Publication number | Publication date |
---|---|
DE2724646A1 (en) | 1977-12-15 |
JPS5810799B2 (en) | 1983-02-28 |
DE2724646C2 (en) | 1989-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5287328A (en) | Dynamic random access memory | |
JPS51123530A (en) | Random access memory | |
JPS5350944A (en) | Mos semiconductor memory | |
JPS5396737A (en) | Random access memory | |
JPS51137339A (en) | Integrated circuit memory | |
JPS5453929A (en) | Random access semiconductor memory array | |
JPS5391538A (en) | Memory access unit | |
JPS5384433A (en) | Semiconductor memory | |
GB2128403B (en) | Random access memory | |
AU504719B2 (en) | Random access memory device | |
DE3071990D1 (en) | Semiconductor memory circuit | |
DE3071677D1 (en) | Semiconductor circuit for a dynamic random access memory | |
JPS5386590A (en) | Random access memory semiconductor | |
GB1554035A (en) | Dynamic random access memory | |
GB1558205A (en) | Random access memory | |
IE45060L (en) | Memory circuit | |
GB2062391B (en) | Semiconductor memory circuit | |
JPS5473530A (en) | Superconductive random access memory | |
JPS51140442A (en) | Memory circuit | |
JPS52138847A (en) | Mos dynamic random access memory | |
JPS5316537A (en) | High speed circuit for mos random access memory | |
JPS52144240A (en) | Amplifier circuit for reading dynamic mos memory | |
IE42579L (en) | Memory circuit | |
JPS5634188A (en) | Mos random access memory | |
JPS5339892A (en) | Semiconductor memory |