JPS53113484A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53113484A
JPS53113484A JP2848577A JP2848577A JPS53113484A JP S53113484 A JPS53113484 A JP S53113484A JP 2848577 A JP2848577 A JP 2848577A JP 2848577 A JP2848577 A JP 2848577A JP S53113484 A JPS53113484 A JP S53113484A
Authority
JP
Japan
Prior art keywords
semiconductor device
production
fine
oxide
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2848577A
Other languages
Japanese (ja)
Inventor
Nobuo Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2848577A priority Critical patent/JPS53113484A/en
Publication of JPS53113484A publication Critical patent/JPS53113484A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To fine the gate structure of a NIS type semiconductor device by forming gate insulation film by oxide of Al , Hf, Ta, Ti, Zr, Nb etc. having large specific dielectric constant.
COPYRIGHT: (C)1978,JPO&Japio
JP2848577A 1977-03-14 1977-03-14 Production of semiconductor device Pending JPS53113484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2848577A JPS53113484A (en) 1977-03-14 1977-03-14 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2848577A JPS53113484A (en) 1977-03-14 1977-03-14 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53113484A true JPS53113484A (en) 1978-10-03

Family

ID=12249956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2848577A Pending JPS53113484A (en) 1977-03-14 1977-03-14 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53113484A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177778A (en) * 1985-01-28 1986-08-09 エイ・ティ・アンド・ティ・コーポレーション Semiconductor device
US6489648B2 (en) 2001-02-19 2002-12-03 Hitachi, Ltd. Semiconductor device
US6689702B2 (en) 1998-12-15 2004-02-10 Intel Corporation High dielectric constant metal oxide gate dielectrics
US7217971B2 (en) 2001-05-22 2007-05-15 Hitachi, Ltd. Miniaturized semiconductor device with improved dielectric properties

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177778A (en) * 1985-01-28 1986-08-09 エイ・ティ・アンド・ティ・コーポレーション Semiconductor device
US6689702B2 (en) 1998-12-15 2004-02-10 Intel Corporation High dielectric constant metal oxide gate dielectrics
US6998357B2 (en) 1998-12-15 2006-02-14 Intel Corporation High dielectric constant metal oxide gate dielectrics
US6489648B2 (en) 2001-02-19 2002-12-03 Hitachi, Ltd. Semiconductor device
US6940118B2 (en) 2001-02-19 2005-09-06 Renesas Technology Corporation Semiconductor device with high permittivity gate dielectric film
US7217971B2 (en) 2001-05-22 2007-05-15 Hitachi, Ltd. Miniaturized semiconductor device with improved dielectric properties
US7358578B2 (en) 2001-05-22 2008-04-15 Renesas Technology Corporation Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring
US7608899B2 (en) 2001-05-22 2009-10-27 Renesas Technology Corporation Semiconductor device

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