JPS53113484A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS53113484A JPS53113484A JP2848577A JP2848577A JPS53113484A JP S53113484 A JPS53113484 A JP S53113484A JP 2848577 A JP2848577 A JP 2848577A JP 2848577 A JP2848577 A JP 2848577A JP S53113484 A JPS53113484 A JP S53113484A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- production
- fine
- oxide
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To fine the gate structure of a NIS type semiconductor device by forming gate insulation film by oxide of Al , Hf, Ta, Ti, Zr, Nb etc. having large specific dielectric constant.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2848577A JPS53113484A (en) | 1977-03-14 | 1977-03-14 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2848577A JPS53113484A (en) | 1977-03-14 | 1977-03-14 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53113484A true JPS53113484A (en) | 1978-10-03 |
Family
ID=12249956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2848577A Pending JPS53113484A (en) | 1977-03-14 | 1977-03-14 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53113484A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61177778A (en) * | 1985-01-28 | 1986-08-09 | エイ・ティ・アンド・ティ・コーポレーション | Semiconductor device |
US6489648B2 (en) | 2001-02-19 | 2002-12-03 | Hitachi, Ltd. | Semiconductor device |
US6689702B2 (en) | 1998-12-15 | 2004-02-10 | Intel Corporation | High dielectric constant metal oxide gate dielectrics |
US7217971B2 (en) | 2001-05-22 | 2007-05-15 | Hitachi, Ltd. | Miniaturized semiconductor device with improved dielectric properties |
-
1977
- 1977-03-14 JP JP2848577A patent/JPS53113484A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61177778A (en) * | 1985-01-28 | 1986-08-09 | エイ・ティ・アンド・ティ・コーポレーション | Semiconductor device |
US6689702B2 (en) | 1998-12-15 | 2004-02-10 | Intel Corporation | High dielectric constant metal oxide gate dielectrics |
US6998357B2 (en) | 1998-12-15 | 2006-02-14 | Intel Corporation | High dielectric constant metal oxide gate dielectrics |
US6489648B2 (en) | 2001-02-19 | 2002-12-03 | Hitachi, Ltd. | Semiconductor device |
US6940118B2 (en) | 2001-02-19 | 2005-09-06 | Renesas Technology Corporation | Semiconductor device with high permittivity gate dielectric film |
US7217971B2 (en) | 2001-05-22 | 2007-05-15 | Hitachi, Ltd. | Miniaturized semiconductor device with improved dielectric properties |
US7358578B2 (en) | 2001-05-22 | 2008-04-15 | Renesas Technology Corporation | Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring |
US7608899B2 (en) | 2001-05-22 | 2009-10-27 | Renesas Technology Corporation | Semiconductor device |
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