JPS5289070A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5289070A JPS5289070A JP561176A JP561176A JPS5289070A JP S5289070 A JPS5289070 A JP S5289070A JP 561176 A JP561176 A JP 561176A JP 561176 A JP561176 A JP 561176A JP S5289070 A JPS5289070 A JP S5289070A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- iii
- thin film
- single crystal
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE: To produce thin film single crystal of good crystallinity by the hetero bonding of perovskite type crystals of given metal and Si, Ge or group II-VI, III-V compound semiconductors.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51005611A JPS5816335B2 (en) | 1976-01-20 | 1976-01-20 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51005611A JPS5816335B2 (en) | 1976-01-20 | 1976-01-20 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5289070A true JPS5289070A (en) | 1977-07-26 |
JPS5816335B2 JPS5816335B2 (en) | 1983-03-30 |
Family
ID=11615985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51005611A Expired JPS5816335B2 (en) | 1976-01-20 | 1976-01-20 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5816335B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59169121A (en) * | 1983-03-11 | 1984-09-25 | トムソン‐セーエスエフ | Method of producing semiconductor device |
US6667196B2 (en) * | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6673667B2 (en) * | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
US6693298B2 (en) * | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US7067856B2 (en) * | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
-
1976
- 1976-01-20 JP JP51005611A patent/JPS5816335B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59169121A (en) * | 1983-03-11 | 1984-09-25 | トムソン‐セーエスエフ | Method of producing semiconductor device |
US7067856B2 (en) * | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
US6693298B2 (en) * | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6667196B2 (en) * | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6673667B2 (en) * | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
Also Published As
Publication number | Publication date |
---|---|
JPS5816335B2 (en) | 1983-03-30 |
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