JPS5289070A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5289070A
JPS5289070A JP561176A JP561176A JPS5289070A JP S5289070 A JPS5289070 A JP S5289070A JP 561176 A JP561176 A JP 561176A JP 561176 A JP561176 A JP 561176A JP S5289070 A JPS5289070 A JP S5289070A
Authority
JP
Japan
Prior art keywords
semiconductor device
iii
thin film
single crystal
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP561176A
Other languages
Japanese (ja)
Other versions
JPS5816335B2 (en
Inventor
Hiromoto Serizawa
Shoichi Fukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP51005611A priority Critical patent/JPS5816335B2/en
Publication of JPS5289070A publication Critical patent/JPS5289070A/en
Publication of JPS5816335B2 publication Critical patent/JPS5816335B2/en
Expired legal-status Critical Current

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Abstract

PURPOSE: To produce thin film single crystal of good crystallinity by the hetero bonding of perovskite type crystals of given metal and Si, Ge or group II-VI, III-V compound semiconductors.
COPYRIGHT: (C)1977,JPO&Japio
JP51005611A 1976-01-20 1976-01-20 semiconductor equipment Expired JPS5816335B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51005611A JPS5816335B2 (en) 1976-01-20 1976-01-20 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51005611A JPS5816335B2 (en) 1976-01-20 1976-01-20 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5289070A true JPS5289070A (en) 1977-07-26
JPS5816335B2 JPS5816335B2 (en) 1983-03-30

Family

ID=11615985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51005611A Expired JPS5816335B2 (en) 1976-01-20 1976-01-20 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5816335B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169121A (en) * 1983-03-11 1984-09-25 トムソン‐セーエスエフ Method of producing semiconductor device
US6667196B2 (en) * 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6673667B2 (en) * 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US6693298B2 (en) * 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US7067856B2 (en) * 2000-02-10 2006-06-27 Freescale Semiconductor, Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169121A (en) * 1983-03-11 1984-09-25 トムソン‐セーエスエフ Method of producing semiconductor device
US7067856B2 (en) * 2000-02-10 2006-06-27 Freescale Semiconductor, Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6693298B2 (en) * 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6667196B2 (en) * 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6673667B2 (en) * 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials

Also Published As

Publication number Publication date
JPS5816335B2 (en) 1983-03-30

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