JPS52139385A - High voltage semiconductor device - Google Patents
High voltage semiconductor deviceInfo
- Publication number
- JPS52139385A JPS52139385A JP4746577A JP4746577A JPS52139385A JP S52139385 A JPS52139385 A JP S52139385A JP 4746577 A JP4746577 A JP 4746577A JP 4746577 A JP4746577 A JP 4746577A JP S52139385 A JPS52139385 A JP S52139385A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- high voltage
- voltage semiconductor
- voltage
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67998176A | 1976-04-26 | 1976-04-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52139385A true JPS52139385A (en) | 1977-11-21 |
Family
ID=24729170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4746577A Pending JPS52139385A (en) | 1976-04-26 | 1977-04-26 | High voltage semiconductor device |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS52139385A (en) |
DE (1) | DE2718185A1 (en) |
GB (1) | GB1576457A (en) |
NL (1) | NL185808C (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2023340B (en) * | 1978-06-01 | 1982-09-02 | Mitsubishi Electric Corp | Integrated circuits |
US4310792A (en) * | 1978-06-30 | 1982-01-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor voltage regulator |
JPS56103448A (en) * | 1980-01-21 | 1981-08-18 | Hitachi Ltd | Semiconductor ic device |
JPH01198071A (en) * | 1988-02-03 | 1989-08-09 | Mitsubishi Electric Corp | Clip diode built-in type transistor |
DE3832750A1 (en) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | PERFORMANCE SEMICONDUCTOR COMPONENT |
DE4240027A1 (en) * | 1992-11-28 | 1994-06-01 | Asea Brown Boveri | MOS controlled diode |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503784A (en) * | 1973-05-16 | 1975-01-16 | ||
JPS5010105A (en) * | 1973-05-24 | 1975-02-01 |
-
1977
- 1977-04-21 NL NL7704389A patent/NL185808C/en not_active IP Right Cessation
- 1977-04-23 DE DE19772718185 patent/DE2718185A1/en not_active Ceased
- 1977-04-26 GB GB1741177A patent/GB1576457A/en not_active Expired
- 1977-04-26 JP JP4746577A patent/JPS52139385A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503784A (en) * | 1973-05-16 | 1975-01-16 | ||
JPS5010105A (en) * | 1973-05-24 | 1975-02-01 |
Also Published As
Publication number | Publication date |
---|---|
NL185808B (en) | 1990-02-16 |
NL7704389A (en) | 1977-10-28 |
NL185808C (en) | 1990-07-16 |
DE2718185A1 (en) | 1977-11-10 |
GB1576457A (en) | 1980-10-08 |
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