JPS4922384A - - Google Patents
Info
- Publication number
- JPS4922384A JPS4922384A JP48034435A JP3443573A JPS4922384A JP S4922384 A JPS4922384 A JP S4922384A JP 48034435 A JP48034435 A JP 48034435A JP 3443573 A JP3443573 A JP 3443573A JP S4922384 A JPS4922384 A JP S4922384A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- General Induction Heating (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2220519 | 1972-04-26 | ||
| DE2220519A DE2220519C3 (en) | 1972-04-26 | 1972-04-26 | Process for crucible-free zone melting of semiconductor rods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4922384A true JPS4922384A (en) | 1974-02-27 |
| JPS5910959B2 JPS5910959B2 (en) | 1984-03-12 |
Family
ID=5843357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48034435A Expired JPS5910959B2 (en) | 1972-04-26 | 1973-03-26 | A crucible-free zone melting method for semiconductor materials that controls the diameter to be constant using three controlled variables. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3880599A (en) |
| JP (1) | JPS5910959B2 (en) |
| BE (1) | BE798760A (en) |
| DE (1) | DE2220519C3 (en) |
| DK (1) | DK142062C (en) |
| NL (1) | NL7216255A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4176002A (en) * | 1974-08-21 | 1979-11-27 | Agence Nationale De Valorisation De La Recherche (Anvar) | Controlling the melt temperature during zone refining and Czochralski crystal growth by sensing the viscous torque of the melt zone during operation |
| DK142586B (en) * | 1977-07-07 | 1980-11-24 | Topsil As | Apparatus for zone melting of a semiconductor rod. |
| JPS58831B2 (en) * | 1978-09-27 | 1983-01-08 | 東洋製罐株式会社 | High frequency induction heating circuit |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL252591A (en) * | 1959-08-17 | |||
| GB904100A (en) * | 1959-09-11 | 1962-08-22 | Siemens Ag | A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil |
| DE1209551B (en) * | 1961-12-07 | 1966-01-27 | Siemens Ag | Process for crucible-free zone melting of a rod-shaped semiconductor body with a control of its diameter or cross-sectional profile and device for carrying out this process |
| US3321299A (en) * | 1964-10-13 | 1967-05-23 | Monsanto Co | Apparatus and process for preparing semiconductor rods |
| US3284172A (en) * | 1964-10-13 | 1966-11-08 | Monsanto Co | Apparatus and process for preparing semiconductor rods |
| US3617392A (en) * | 1968-10-29 | 1971-11-02 | Semimetals Inc | Power control for crystal growing |
| DE1913881A1 (en) * | 1969-03-19 | 1970-10-22 | Siemens Ag | Device for crucible-free zone melting |
-
1972
- 1972-04-26 DE DE2220519A patent/DE2220519C3/en not_active Expired
- 1972-11-30 NL NL7216255A patent/NL7216255A/xx unknown
-
1973
- 1973-03-19 US US342457A patent/US3880599A/en not_active Expired - Lifetime
- 1973-03-26 JP JP48034435A patent/JPS5910959B2/en not_active Expired
- 1973-04-17 DK DK212573A patent/DK142062C/en not_active IP Right Cessation
- 1973-04-26 BE BE130450A patent/BE798760A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NL7216255A (en) | 1973-10-30 |
| DE2220519A1 (en) | 1973-11-15 |
| JPS5910959B2 (en) | 1984-03-12 |
| DK142062B (en) | 1980-08-18 |
| DK142062C (en) | 1981-01-12 |
| DE2220519B2 (en) | 1981-02-26 |
| US3880599A (en) | 1975-04-29 |
| BE798760A (en) | 1973-10-26 |
| DE2220519C3 (en) | 1982-03-11 |