JPH1197470A - Molding die structure of bga semiconductor device - Google Patents
Molding die structure of bga semiconductor deviceInfo
- Publication number
- JPH1197470A JPH1197470A JP25079997A JP25079997A JPH1197470A JP H1197470 A JPH1197470 A JP H1197470A JP 25079997 A JP25079997 A JP 25079997A JP 25079997 A JP25079997 A JP 25079997A JP H1197470 A JPH1197470 A JP H1197470A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- lower mold
- solder ball
- resin
- mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Moulds For Moulding Plastics Or The Like (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、ＢＧＡ型半導体
装置のモールド用金型構造に関する。The present invention relates to a mold structure for molding a BGA type semiconductor device.
【０００２】[0002]
【従来の技術】ＢＧＡ型半導体装置は、基板上にチップ
を載置固定し、基板裏面に半田ボールを突設し、チップ
は樹脂でモールドされている。2. Description of the Related Art In a BGA type semiconductor device, a chip is mounted and fixed on a substrate, and solder balls are protruded from the back surface of the substrate. The chip is molded with resin.
【０００３】かかる半導体装置のモールド成型に際して
は、図３、図４に示すようにモールド上型１とモールド
下型２との間にチップ載着の基板M1を介在させてモール
ド成型をする。In molding such a semiconductor device, as shown in FIGS. 3 and 4, a substrate M1 on which a chip is mounted is interposed between an upper mold 1 and a lower mold 2 so as to mold.
【０００４】[0004]
【発明が解決しようとする課題】ところが、モールド時
に生起する樹脂バリｎが、図３に示すようにモールド下
型２上に付着していると、次の製品のモールド成型時
に、図５に示すように基板M1裏面に形成された半田ボー
ルM4のスルーホール導通体である金メッキ部M5に樹脂バ
リｎが圧着されることになる。かかる状態で次工程の、
半田ボールM4のリフロー工程を経ると、半田ボールM4が
樹脂バリｎによって金メッキ部M5に確実に溶着されない
ことになり、半田ボールM4の欠落する原因となるおそれ
があった。However, if the resin burr n generated during molding adheres to the lower mold 2 as shown in FIG. 3, it will be shown in FIG. 5 when the next product is molded. As described above, the resin burr n is pressure-bonded to the gold-plated portion M5 which is a through-hole conductor of the solder ball M4 formed on the back surface of the substrate M1. In such a state,
After the reflow process of the solder ball M4, the solder ball M4 is not securely welded to the gold plated portion M5 by the resin burr n, which may cause the solder ball M4 to be dropped.
【０００５】[0005]
【課題を解決するための手段】この発明は、ＢＧＡ型半
導体装置のモールド成型を行う際に用いるモールド下型
の圧着面に、凹部を形成すると共に凹部は半田ボールが
突設されるべき位置と相応する個所に配置してなるＢＧ
Ａ型半導体装置のモールド用金型の構造を提供せんとす
るものである。SUMMARY OF THE INVENTION According to the present invention, a concave portion is formed on a pressure-bonding surface of a lower mold used when performing molding of a BGA type semiconductor device, and the concave portion defines a position where a solder ball is to be projected. BG arranged at the corresponding place
An object of the present invention is to provide a structure of a mold for an A-type semiconductor device.
【０００６】[0006]
【発明の実施の形態】この発明では、ＢＧＡ型半導体装
置のモールド成型を行う際に用いるモールド下型の圧着
面に凹部を形成し、凹部は半田ボールが突設されるべき
位置と相応する個所に配置されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, a concave portion is formed in a crimping surface of a lower mold used for molding a BGA type semiconductor device, and the concave portion corresponds to a position corresponding to a position where a solder ball is to be projected. Are located in
【０００７】従って、モールド成型時に樹脂バリが生起
し離型時に樹脂バリがモールド下型の圧着面に付着して
も次の製品のモールド工程時には、樹脂バリはモールド
下型の凹部に収容されており、従って、少くともＢＧＡ
型半導体装置の基板の半田ボール位置と相対する個所す
なわち凹部位置では、樹脂バリがモールド下型と基板裏
面との間に圧着されるおそれはない。Therefore, even if resin burrs occur during molding and the resin burrs adhere to the pressure-bonded surface of the lower mold during release, the resin burrs are accommodated in the recesses of the lower mold during the molding process of the next product. And therefore at least BGA
There is no risk that the resin burr will be pressed between the lower mold and the back surface of the substrate at a position opposite to the solder ball position of the substrate of the die semiconductor device, that is, at the concave position.
【０００８】もっとも、凹部位置以外の部分では、樹脂
バリの圧着が生起してもその部分は半田ボールが突設さ
れる部分ではないので、半田ボールの溶着には全く影響
がない。[0008] However, even if the press-fit of the resin burr occurs in a portion other than the concave position, the portion is not a portion where the solder ball is protruded, so that there is no influence on the welding of the solder ball.
【０００９】従って、半田ボールが突設されるべき位置
であるプリントされた金メッキ部には樹脂バリが付着し
ないため、後工程での半田ボールの溶着が確実に行なえ
る。Therefore, since the resin burrs do not adhere to the printed gold-plated portions where the solder balls are to be projected, the solder balls can be reliably welded in a later step.
【００１０】[0010]
【実施例】この発明の実施例を図面にもとづき詳説す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described in detail with reference to the drawings.
【００１１】図１、図２に示すのは、本発明のモールド
用金型構造を示す実施例である。FIG. 1 and FIG. 2 show an embodiment showing a mold structure for a mold according to the present invention.
【００１２】ＭはＢＧＡ型半導体装置を示しており、同
装置Ｍは、図６に示すようにガラスエポキシ樹脂等で成
形された基板M1上にチップM2を載置固定し、ワイヤーM3
をボンディングして、基板M1裏面に突設した半田ボール
M4とチップM2とを導通状態として構成されている。M denotes a BGA type semiconductor device. As shown in FIG. 6, a chip M2 is mounted and fixed on a substrate M1 formed of glass epoxy resin or the like, and a wire M3 is provided.
Solder balls protruding from the back of the board M1
The M4 and the chip M2 are configured to be conductive.
【００１３】かかるＢＧＡ型半導体装置Ｍの製造工程中
のモールド工程は、基板M1上に固定し、ワイヤーボンデ
ィングをしたチップM2を樹脂モールドM6する。In the molding step in the manufacturing process of the BGA type semiconductor device M, the chip M2 fixed on the substrate M1 and wire-bonded is resin-molded M6.
【００１４】樹脂モールドする作業工程は、図１、図２
に示すように、モールド上型１とモールド下型２との間
に、モールド対象のチップ付基板M1を介在し、上下から
圧着し樹脂を注入して、樹脂モールドする。The steps of resin molding are shown in FIGS.
As shown in (1), a substrate M1 with a chip to be molded is interposed between the upper mold half 1 and the lower mold half 2, pressure-bonded from above and below, resin is injected, and resin molding is performed.
【００１５】モールド上型１には、基板M1上面をモール
ドするための型凹部３が下面に形成されており、型凹部
３に注入路６を介して樹脂を注入して基板上をモールド
する（図１）。A mold recess 3 for molding the upper surface of the substrate M1 is formed on the lower surface of the upper mold 1, and a resin is injected into the mold recess 3 through an injection path 6 to mold the substrate ( (Fig. 1).
【００１６】他方、モールド下型２の基板圧着面４には
樹脂バリｎが収納される凹部５が形成されており、しか
も、この凹部５は、モールド工程後に行われる半田ボー
ルM4のリフロー工程時に、半田ボールM4が突設されるべ
き位置に相応する個所に配置されている。On the other hand, a concave portion 5 for accommodating the resin burr n is formed in the substrate pressing surface 4 of the lower mold 2 and the concave portion 5 is formed during the reflow process of the solder ball M4 performed after the molding process. The solder ball M4 is arranged at a position corresponding to a position where the solder ball M4 is to be protruded.
【００１７】すなわち、図６に示すように、基板M1の裏
面には、チップM2と導通する半田ボールM4が突設される
ものであるが、半田ボールM4を突設すべき位置には、図
２中の反転図に示すようにチップM2と導通すべく、ボン
ディングワイヤーM3と導通した金メッキ部M5が印刷され
ており、この金メッキ部M5の相対位置に凹部５が形成さ
れていることになる。That is, as shown in FIG. 6, a solder ball M4 electrically connected to the chip M2 is provided on the rear surface of the substrate M1. As shown in the inverted drawing in FIG. 2, a gold-plated portion M5 that is electrically connected to the bonding wire M3 is printed so as to be electrically connected to the chip M2, and the concave portion 5 is formed at a position relative to the gold-plated portion M5.
【００１８】凹部５の形状は、図１に示すように半田ボ
ールM4の突設位置にある金メッキ部M5と対応した円形く
ぼみとしたものや、図２に示すように基板圧着面４上に
縦方向及び横方向の多数の条溝７，７′を形成し、その
交差部分に金メッキ部M5が位置する凹部５を形成するよ
うにしたもの等がある。As shown in FIG. 1, the shape of the concave portion 5 is a circular depression corresponding to the gold-plated portion M5 at the projecting position of the solder ball M4, or a vertical recess on the substrate pressing surface 4 as shown in FIG. There is a structure in which a number of grooves 7 and 7 'in the horizontal and vertical directions are formed, and a recess 5 in which a gold-plated portion M5 is located is formed at the intersection.
【００１９】このように、基板の裏面に圧着されるモー
ルド下型２に凹部５を形成することにより、次のような
作用効果が生起する。As described above, by forming the concave portion 5 in the lower mold 2 which is pressed against the back surface of the substrate, the following operation and effect are produced.
【００２０】すなわち、基板上のモールド工程が完了す
るとモールド上下型１，２は基板上のチップを離型すべ
く基板M1から離反する。That is, when the molding step on the substrate is completed, the upper and lower mold halves 1 and 2 are separated from the substrate M1 to release the chip on the substrate.
【００２１】この際、脱型時に樹脂バリｎがモールド下
型２上に落下し、付着する場合が生起する。At this time, when the mold is removed from the mold, the resin burr n may fall on the mold lower mold 2 and adhere thereto.
【００２２】このまま、次製品のモールド工程のために
新しい基板がモールド上下型１，２間に搬送されてきて
上下型１，２が基板M1を圧着モールドすると、モールド
下型２上の樹脂バリｎ、基板M1の裏面、すなわち半田ボ
ールM4の突設位置の金メッキ部M5に付着し、モールド工
程の後の半田ボールのリフロー工程時に、半田ボールM4
と金メッキ部M5との溶着が阻害される。In this state, a new substrate is transported between the upper and lower molds 1 and 2 for the molding process of the next product, and the upper and lower dies 1 and 2 press-mold the substrate M1. The solder ball M4 adheres to the back surface of the substrate M1, that is, to the gold-plated portion M5 at the projecting position of the solder ball M4, and during the solder ball reflow process after the molding process.
And the gold-plated portion M5 is inhibited from welding.
【００２３】しかし、モールド下型２の圧着面に凹部５
が形成されているため、樹脂バリｎは、該下型２の圧着
時に、金メッキ部M5に対応する位置において凹部５中に
嵌入し、少くとも図３、図４、図５に示すような基板M1
の金メッキ部M5に樹脂バリｎが付着する状態となること
はない。However, a concave portion 5 is formed on the crimping surface of the lower mold 2.
Is formed, the resin burr n fits into the concave portion 5 at the position corresponding to the gold-plated portion M5 when the lower mold 2 is crimped, and at least the substrate as shown in FIGS. 3, 4 and 5 is formed. M1
The resin burr n does not adhere to the gold plated portion M5.
【００２４】[0024]
【発明の効果】この発明によれば、モールド下型の圧着
面に凹部を形成し、凹部は半田ボールが突設されるべき
位置と相応する個所に配置しているので、モールド成型
時や離型時に生起する樹脂バリが、金型の作動時に、モ
ールド下型の圧着面に付着しても、樹脂バリは凹部に収
納される。According to the present invention, a concave portion is formed on the crimping surface of the lower mold, and the concave portion is arranged at a position corresponding to a position where the solder ball is to be protruded. Even if the resin burr generated during the mold adheres to the press-bonded surface of the lower mold during operation of the mold, the resin burr is stored in the recess.
【００２５】従って、モールド下型と基板とが圧着され
ても半田ボールが突設される金メッキ部には樹脂バリが
付着せず、後工程での半田ボール溶着が確実に行え、従
来の金メッキ部と半田ボールとの間に樹脂バリが介在し
て半田ボールの欠落が生起する原因を除去できる効果が
ある。Therefore, even when the lower mold and the substrate are pressed against each other, no resin burr adheres to the gold plating portion where the solder balls are projected, so that solder balls can be reliably welded in a later step, and the conventional gold plating portion can be formed. This has the effect of eliminating the cause of the occurrence of chipping of the solder balls due to the presence of resin burrs between the solder balls.
【図１】本発明構造の斜視説明図。FIG. 1 is a perspective explanatory view of the structure of the present invention.
【図２】他の実施例の斜視説明図。FIG. 2 is an explanatory perspective view of another embodiment.
【図３】従来技術の斜視説明図。FIG. 3 is an explanatory perspective view of a conventional technique.
【図４】従来技術のモールド成型の断面説明図。FIG. 4 is an explanatory cross-sectional view of conventional molding.
【図５】同要部の拡大断面図。FIG. 5 is an enlarged sectional view of the main part.
【図６】ＧＢＡ型半導体装置の断面説明図。FIG. 6 is an explanatory cross-sectional view of a GBA semiconductor device.
Ｍ ＢＧＡ型半導体装置 M1 基板 M2 チップ M3 ワイヤーボンディング M4 半田ボール M6 樹脂モールド ｎ 樹脂バリ １ 上型 ２ 下型 ３ 型凹部 ４ 圧着面 ５ 凹部 ７ 条溝 ７′条溝 MBGA type semiconductor device M1 substrate M2 chip M3 wire bonding M4 solder ball M6 resin mold n resin burr 1 upper mold 2 lower mold 3 mold recess 4 crimping surface 5 recess 7 groove 7 'groove
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ // Ｂ２９Ｌ 31:34 ──────────────────────────────────────────────────続 き Continued on front page (51) Int.Cl. 6 Identification code FI // B29L 31:34
Claims (1)
う際に用いるモールド下型の圧着面に、凹部を形成する
と共に凹部は半田ボールが突設されるべき位置と相応す
る個所に配置してなるＢＧＡ型半導体装置のモールド用
金型の構造。1. A concave portion is formed on a pressure-bonding surface of a lower mold used for molding a BGA type semiconductor device, and the concave portion is arranged at a position corresponding to a position where a solder ball is to be protruded. Structure of a mold for a BGA type semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25079997A JPH1197470A (en) | 1997-09-16 | 1997-09-16 | Molding die structure of bga semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25079997A JPH1197470A (en) | 1997-09-16 | 1997-09-16 | Molding die structure of bga semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1197470A true JPH1197470A (en) | 1999-04-09 |
Family
ID=17213229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25079997A Pending JPH1197470A (en) | 1997-09-16 | 1997-09-16 | Molding die structure of bga semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1197470A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100403132B1 (en) * | 2001-12-28 | 2003-10-30 | 동부전자 주식회사 | mold cavity bar for manufacturing a semiconductor package |
| US6830954B2 (en) | 2000-08-31 | 2004-12-14 | Micron Technology, Inc. | Transfer molding and underfilling method and apparatus |
-
1997
- 1997-09-16 JP JP25079997A patent/JPH1197470A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6830954B2 (en) | 2000-08-31 | 2004-12-14 | Micron Technology, Inc. | Transfer molding and underfilling method and apparatus |
| US6838319B1 (en) | 2000-08-31 | 2005-01-04 | Micron Technology, Inc. | Transfer molding and underfilling method and apparatus including orienting the active surface of a semiconductor substrate substantially vertically |
| US6863516B2 (en) * | 2000-08-31 | 2005-03-08 | Micron Technology, Inc. | Transfer molding and underfilling apparatus |
| KR100403132B1 (en) * | 2001-12-28 | 2003-10-30 | 동부전자 주식회사 | mold cavity bar for manufacturing a semiconductor package |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7462936B2 (en) | Formation of circuitry with modification of feature height | |
| US7288441B2 (en) | Method for two-stage transfer molding device to encapsulate MMC module | |
| JP2875139B2 (en) | Method for manufacturing semiconductor device | |
| KR101054602B1 (en) | Method of manufacturing semiconductor device | |
| US7456049B2 (en) | Method of fabricating lead frame and method of fabricating semiconductor device using the same, and lead frame and semiconductor device using the same | |
| US20110143498A1 (en) | Semiconductor package with a support structure and fabrication method thereof | |
| US20020074147A1 (en) | Bump chip lead frame and package | |
| JP2000068397A (en) | Package for semiconductor device and manufacture thereof | |
| US6780679B2 (en) | Semiconductor device and method of manufacturing the same | |
| US20080246129A1 (en) | Method of manufacturing semiconductor device and semiconductor device | |
| JPH06275764A (en) | Lead frame and manufacture of semiconductor device using same | |
| JP2001077287A (en) | Lead frame for semiconductor device | |
| JPH1197470A (en) | Molding die structure of bga semiconductor device | |
| JP2001035985A (en) | Semiconductor device sealed with resin | |
| JPH088375A (en) | Semiconductor device, lead frame and mold for manufacturing semiconductor device | |
| JPH10135375A (en) | Semiconductor device and method and system for manufacturing semiconductor device | |
| JP2004104153A (en) | Light emitting element and semiconductor device | |
| JP2002050646A (en) | Manufacturing method of semiconductor device | |
| JP2001077275A (en) | Lead frame and manufacture of resin-sealed semiconductor device using the same | |
| JP2002026192A (en) | Lead frame | |
| JPH10144713A (en) | Molding method, molding device and semiconductor device | |
| JPH11103001A (en) | Semiconductor device and manufacture thereof | |
| JP2970066B2 (en) | Lead frame manufacturing method | |
| JPH10209330A (en) | Bga-type hollow semiconductor package | |
| JPH10135376A (en) | Semiconductor device and production thereof |