JPH113890A - Semiconductor integrated circuit device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain high performance such as low wiring resistance, etc., and also high reliability, by a method wherein there is provided a wiring layer forming a titanium nitride film containing a specified weight in a lower portion of an aluminum alloy layer. SOLUTION: After titanium nitride film 13 which is rich in titanium is formed on a semiconductor substrate 1, an aluminum alloy layer 14 is formed, and then a titanium nitride film 15 which is rich in titanium is formed. Thereafter, an unnecessary area of the titanium nitride film rich in titanium 15/the aluminum alloy layer 14/the titanium nitride film rich in titanium 13 is removed, and patterns of a wiring layer 16 of a three layer structure comprising the titanium nitride film rich in titanium 15/the aluminum alloy layer 14/the titanium nitride film rich in titanium 13 are formed. Note, the titanium films rich is titanium 13, 15 are titanium nitride films containing 70 to 95% of titanium.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device and a method of manufacturing the same, and more particularly, to a semiconductor integrated circuit device having a wiring layer having an aluminum alloy layer of high performance and high reliability. The present invention relates to an effective semiconductor integrated circuit device and a method for manufacturing the same.

[0002]

2. Description of the Related Art The present inventor has studied a method of manufacturing a semiconductor integrated circuit device, particularly a wiring forming technique. The following is a technique studied by the present inventors, and the outline is as follows.

That is, in a method of manufacturing a semiconductor integrated circuit device, for example, a MOSFET (Metal Oxide Semiconductor) is used.
After forming a silicon oxide film on the semiconductor substrate on which the uctor field effect transistor is formed, forming a contact hole in the silicon oxide film, embedding the plug in the contact hole, and then electrically connecting the plug to the plug Forming a layer.

In this case, a wiring layer is manufactured by forming an aluminum alloy layer on a titanium (Ti) film, and then forming a titanium film and a titanium nitride (TiN) film containing 50% titanium. In some cases, a wiring layer having a four-layer structure is used.

[0005] Incidentally, as a document describing a technology for forming a wiring layer in a semiconductor integrated circuit device, for example, “Ninety-Sixth Latest Semiconductor Process Technology” published on November 2, 1989 by Press Journal, p. p273
Some are described in

[0006]

However, in the above-described semiconductor integrated circuit device having a wiring layer, since a titanium film is used as a lower layer film of an aluminum alloy layer, a heat treatment (such as a subsequent step of manufacturing an interlayer insulating film) is performed. 400-450
C), a reaction between the aluminum alloy layer and the titanium film occurs, and the resistance of the aluminum alloy layer increases.
During the heat treatment for 0 minute, the wiring resistance increases by about 20%), thereby increasing the wiring resistance.

In this case, the aluminum alloy layer formed on the titanium film has an advantage that the wiring reliability (EM) is improved by improving the orientation (the property of making the crystal orientation uniform). . Therefore, not forming a titanium film as a lower layer film of the aluminum alloy layer is not a sufficient measure.

In order to make the rise in wiring resistance relatively small, a method of thinning the titanium film is considered.
When the thickness is less than 0 nm, it is difficult to control the thickness and uniformity.

Therefore, in a semiconductor integrated circuit device having a multi-layer structure and a gate electrode pattern of 0.25 μm or less,
Since the thickness of the aluminum alloy layer is required in consideration of the resistance increase of the lower wiring layer such as the first wiring layer, wiring processing becomes difficult. Further, as the distance between the space portions between the wiring layers decreases with miniaturization, there is a problem that it becomes difficult to form an insulating film completely buried in the region.

An object of the present invention is to provide a semiconductor integrated circuit device having a wiring layer having an aluminum alloy layer with high performance and high reliability such as low wiring resistance, and a method of manufacturing the same.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0012]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, according to the semiconductor integrated circuit device of the present invention, titanium is added to the lower part of the aluminum alloy layer in a range of 70 to 95%.
% Of a wiring layer on which a titanium nitride film is contained.

Further, according to the method of manufacturing a semiconductor integrated circuit device of the present invention, after forming a titanium nitride film containing 70 to 95% of titanium on a substrate such as a semiconductor substrate on which a semiconductor element is formed, Forming a wiring layer composed of an aluminum alloy layer and a titanium nitride film containing 70 to 95% titanium by forming an aluminum alloy layer.

In the following description,% is% by weight.
(Wt%).

[0016]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments, components having the same function are denoted by the same reference numerals, and redundant description will be omitted.

(Embodiment 1) FIGS. 1 to 7 are schematic sectional views showing manufacturing steps of a semiconductor integrated circuit device according to Embodiment 1 of the present invention. The semiconductor integrated circuit device and the method of manufacturing the same according to the present embodiment will be specifically described with reference to FIG.

First, as shown in FIG. 1, a silicon oxide film is formed on a device isolation region, which is a selective region on the surface of a semiconductor substrate (substrate) 1 made of, for example, a p-type silicon single crystal by thermal oxidation. A field insulating film 2 is formed.

Next, a gate insulating film 3 made of, for example, silicon oxide is formed on the semiconductor substrate 1 and a conductive polycrystalline silicon film is formed on the gate insulating film 3.
Using a photolithography technique and a selective etching technique, the polycrystalline silicon film is patterned to form a gate electrode 4.
And a patterned gate insulating film 3 is formed.

Thereafter, a sidewall spacer 5 made of, for example, silicon oxide is formed on the side wall of the gate electrode 4. Thereafter, an n-type impurity such as phosphorus is ion-implanted into the semiconductor substrate 1 to form an n-type semiconductor region 6 serving as a source and a drain. Next, after a titanium film is deposited on the semiconductor substrate 1, a heat treatment is performed to form a titanium silicide film in a silicon region in contact with the titanium film, and then a selective etching technique such as dry etching is used. Then, the titanium film which has not been turned into a titanium silicide film is removed, and a contact region 7 made of a titanium silicide film is formed on the surface layer of the gate electrode 4 and the n-type semiconductor region 6 serving as a source / drain. In this case, the gate electrode 4 on the field insulating film 2 is used as a wiring layer. In the above-described manufacturing process of the semiconductor integrated circuit device, an n-channel MOSFET is formed as a semiconductor element on the semiconductor substrate 1. However, a p-channel MOSFET other than the n-channel MOSFET is formed on the semiconductor substrate 1.
An embodiment in which various semiconductor elements such as an FET, a CMOSFET, a bipolar transistor, and a capacitor are formed can be employed.

Next, after an insulating film 8 is formed on the semiconductor substrate 1, through holes (connection holes) 9 are formed in the insulating film 8 (FIG. 2).

In this case, the insulating film 8 has a three-layer structure.
It is formed as. That is, on the semiconductor substrate 1,
A silicon oxide film is formed to a thickness of about 200 nm by a reaction between TEOS (tetraethoxysilane) and oxygen by using a plasma CVD (Chemical Vapor Deposition) method, and then the SOG (Spin) is formed by using a spin coating method.
On Glass) film is formed with a thickness of about 300 nm,
Thereafter, a silicon oxide film having a thickness of about 1500 nm is formed by a reaction between TEOS and oxygen by using a plasma CVD method.

Next, CMP (Chemical Mechanical Poli)
Insulating film 8 having a flat surface by polishing the insulating film (polishing of a silicon oxide film on the surface to about 1200 nm) using a shing (chemical mechanical polishing) method. And After that, through holes 9 are formed in the insulating film 8 using a photolithography technique and a selective etching technique.

Thereafter, the plug 12 is inserted into the through hole 9.
(FIG. 3). In this case, on the semiconductor substrate 1,
After forming the titanium film 10 with a thickness of about 10 nm,
A titanium nitride film 11 containing 50% of titanium (a titanium nitride film generally used in the prior art) 11
It is formed with a thickness of about 0 nm. Next, after forming a tungsten film with a thickness of about 300 nm by using the CVD method, the through hole 9 is formed by using the etch-back method.
By removing the other tungsten films, plugs 12 made of the tungsten film embedded in the through holes 9 are formed.

Next, on the semiconductor substrate 1, a wiring layer (first wiring layer) 16 having a three-layer structure including a titanium-rich titanium nitride film 13, an aluminum alloy layer 14, and a titanium-rich titanium nitride film 15 is formed. Is formed (FIG. 4). In this case, the titanium-rich titanium nitride film 13 is a unique term used only in the present specification, and as a result of a study by the present inventors, a titanium nitride film containing 70 to 95% of titanium (nitride film) The ratio of titanium to nitrogen in the titanium film is 70%:
30% to 95%: 5% of titanium nitride film), and the titanium contained in the titanium nitride film is 70 to 90%. It is what is called.

The aluminum alloy layer 14 contains 5% or less of at least one material of silicon (Si), copper (Cu), magnesium (Mg), germanium (Ge), zinc (Zn), and gallium (Ga). Aluminum alloy layer.

A specific method for manufacturing the wiring layer 16 is as follows.
A reactive sputtering method or C
Using a VD method, a titanium-rich titanium nitride film (for example, a titanium nitride film containing 70% titanium) 13
After forming with a film thickness of about 0 nm, an aluminum alloy layer (for example, an aluminum alloy layer containing 0.5% of copper) 14 is formed in the same vacuum system such as a reactive sputtering apparatus, and then, for example, In the same vacuum system such as a reactive sputtering apparatus, a titanium-rich titanium nitride film (for example, a titanium nitride film containing 70% of titanium) 15 is formed with a thickness of about 10 nm.

In this case, the titanium-rich titanium nitride film 1
In forming the layers 3 and 15, a reactive sputtering apparatus using a reactive sputtering method in a mixed gas atmosphere of an argon gas and a nitrogen gas is used. And
The ratio of nitriding in the titanium-rich titanium nitride films (for example, titanium nitride films containing 70% of titanium) 13 and 15 can be controlled by changing the ratio of argon gas to nitrogen gas. When forming the titanium-rich titanium nitride films 13 and 15 (for example, titanium nitride films containing 70% titanium) of the present embodiment, for example, the film forming temperature is set to 300 ° C. and the film forming pressure is set to 3 mTorr ( (MilliTorr), the deposition power is 4 kW, and the mixture ratio of nitrogen gas and argon gas is 40%: 60%.

Thereafter, unnecessary regions of the titanium-rich titanium nitride film 15 / aluminum alloy layer 14 / titanium-rich titanium nitride film 13 are removed by using a photolithography technique and a selective etching technique. A pattern of a wiring layer (first wiring layer) 16 having a three-layer structure including a titanium film 15 / aluminum alloy layer 14 / a titanium-rich titanium nitride film 13 is formed (FIG. 5).

Next, after forming an insulating film 17 as an interlayer insulating film on the semiconductor substrate 1, a through hole 18 is formed in the insulating film 17 (FIG. 6). In this case, the insulating film 1
The manufacturing process of 7 is performed using the same manufacturing process as the manufacturing process of the insulating film 8 described above. In addition, through hole 1
The manufacturing process 8 is performed using the same manufacturing process as the manufacturing process of the through hole 9 described above.

Next, the titanium film 1 is formed in the through hole 18.
9. A plug 21 composed of a titanium nitride film 20 containing 50% titanium and a tungsten film is connected to the above-described through hole 9 by using a titanium film 10, a titanium nitride film 11 containing 50% titanium and a tungsten film. The plug 12 is formed using the same manufacturing process as that for forming the plug 12. Thereafter, a wiring layer 25 as a second wiring layer is formed on the semiconductor substrate 1 (FIG. 7).

The wiring layer 25 is a three-layered wiring layer (second wiring layer) composed of a titanium-rich titanium nitride film 22, an aluminum alloy layer 23, and a titanium-rich titanium nitride film 24. Rich titanium nitride film 13
Wiring layer (first wiring layer) 1 consisting of aluminum, an aluminum alloy layer 14, and a titanium-rich titanium nitride film 15
6 is performed using the same manufacturing process as the manufacturing process.

Thereafter, according to the design specifications, the above-described manufacturing steps (the insulating film 17 as an interlayer insulating film, the through-hole 1
8, a titanium film 19, a titanium nitride film 20 containing 50% titanium, a plug 21 made of a tungsten film, and a wiring layer 25 as a second wiring layer). By forming, the manufacturing process of the semiconductor integrated circuit device of the present embodiment is completed.

According to the above-described semiconductor integrated circuit device of the present embodiment, the first wiring layer 16 includes the titanium-rich titanium nitride film 13, the aluminum alloy layer 14, and the titanium-rich titanium nitride film 15. Since the wiring layer has a three-layer structure of a titanium-rich titanium nitride film / aluminum alloy layer / titanium-rich titanium nitride film, for example, as a wiring layer having a layer structure, the insulation as a subsequent interlayer insulating film is obtained. At the time of heat treatment such as a manufacturing process of the film 17, the reaction between the aluminum alloy layer 14 and titanium in the titanium-rich titanium nitride films 13 and 15 can be prevented, so that the resistance of the aluminum alloy layer 14 can be prevented from increasing. As a result, an increase in the wiring resistance of the wiring layer 16 can be prevented, so that the wiring layer 16 having a low-resistance wiring resistance can be obtained.

In this case, as a result of the study by the present inventor, the titanium-rich titanium nitride films 13 and 15 have a titanium content of 70 to 9%.
5% titanium nitride film (the ratio of titanium to nitrogen in the titanium nitride film is 70%: 30% to 95%: 5%
Titanium nitride film). The aluminum alloy layer 14 is an aluminum alloy layer containing at least 5% of at least one material of silicon, copper, magnesium, germanium, zinc, and gallium.

According to the semiconductor integrated circuit device of the present embodiment, the first wiring layer 16 has a three-layer structure including the titanium-rich titanium nitride film 13, the aluminum alloy layer 14, and the titanium-rich titanium nitride film 15. The wiring layer has a three-layered structure of a titanium-rich titanium nitride film / aluminum alloy layer / titanium-rich titanium nitride film. The aluminum alloy layer 14 to be formed is improved in the orientation (the property of making the directionality of the crystal uniform), whereby the wiring reliability is improved, and the wiring layer 16 with high reliability can be obtained.

Further, since the reaction between the aluminum alloy layer 14 and titanium in the titanium-rich titanium nitride films 13 and 15 can be prevented, the resistance of the aluminum alloy layer 14 can be prevented from increasing, and the aluminum alloy layer 14 can be prevented from increasing.
By improving the orientation of the wiring layer and improving the reliability of the wiring, the wiring layer 16 can be finely processed and the wiring layer 16 can have high performance and high reliability.

According to the method of manufacturing a semiconductor integrated circuit device of the present embodiment, after forming a titanium-rich titanium nitride film 13 by using a reactive sputtering method or a CVD method, for example, a reactive sputtering device or the like is used. In the same vacuum system, the aluminum alloy layer 14 is formed, and then, for example, in the same vacuum system such as a reactive sputtering device,
Since the titanium-rich titanium nitride film 15 is formed, the wiring layer 16 having high performance and high reliability can be manufactured by a simple manufacturing process.

(Embodiment 2) FIG. 8 is a schematic sectional view showing a semiconductor integrated circuit device according to Embodiment 2 of the present invention.

The semiconductor integrated circuit device according to the present embodiment is used in the prior art as a substitute film for the titanium-rich titanium nitride film 15 on the wiring layer 16 in the semiconductor integrated circuit device according to the first embodiment. A thin film 26 having a two-layer structure composed of a titanium film and a titanium nitride film containing 50% of titanium is applied. The wiring layer 2 in the semiconductor integrated circuit device according to the first embodiment described above.
As a substitute film for the titanium-rich titanium nitride film 24 on the upper part of No. 3, a thin film 27 having a two-layer structure composed of a titanium film used in the prior art and a titanium nitride film containing 50% of titanium is applied. Is what it is.

In this case, the thin films 26 and 27 are formed by forming a titanium film with a thickness of about 10 nm,
This is a thin film having a two-layer structure in which the included titanium nitride film is formed with a thickness of about 75 nm.

According to the semiconductor integrated circuit device of this embodiment, since the titanium-rich titanium nitride film 13 (22) is used as the lower layer film of the aluminum alloy layer 14 (23), the subsequent interlayer insulating film is used. During the heat treatment such as the manufacturing process of the insulating film 17 as the
Since the reaction between (23) and titanium in the titanium-rich titanium nitride film 13 (22) can be prevented, the aluminum alloy layer 14 (23) and the thin film 26 (2
Even when the reaction with titanium occurs in 7) and the resistance of the aluminum alloy layer 14 (23) increases, the increase in the resistance of the aluminum alloy layer 14 (23) can be reduced as compared with the conventional case.

(Embodiment 3) FIG. 9 is a schematic sectional view showing a semiconductor integrated circuit device according to Embodiment 3 of the present invention.

In the semiconductor integrated circuit device of the present embodiment, the wiring layer 16 is embedded in the through hole 9 when the wiring layer 16 is formed in the semiconductor integrated circuit device of the first embodiment. . In this case, the manufacturing process of the titanium nitride film (titanium nitride film containing 50% titanium) 11 buried in the through hole 9 and the plug 12 made of the tungsten film in the semiconductor integrated circuit device of the first embodiment described above. Is omitted, the through-hole 9 is formed, the titanium film 10 is formed, and then the wiring layer 16 is formed. At the same time, the through-hole 9 is formed with the wiring layer 16 buried.

In forming the wiring layer 25 in the semiconductor integrated circuit device of the first embodiment, the wiring layer 25 is embedded in the through hole 18.

When the aluminum alloy layer 14 (23) in the wiring layer 16 (25) is formed, an annealing process is performed to completely fill the aluminum alloy layer 14 (23) in the through hole 9 (18). Thus, a manufacturing process for reflowing the aluminum alloy layer 14 (23) is performed. When the aspect ratio of the through hole 9 (23) is large, a titanium film 10 (19) is formed as a base film (wet etching layer).

According to the semiconductor integrated circuit device of the present embodiment, when forming the wiring layer 16 (25),
By embedding (25) in the through hole 9 (18) and forming the plug in that region, the manufacturing process of the plug can be simplified.

Also, the titanium film 10 (1
Even when 9) is formed, the titanium-rich titanium nitride film 13 (22) is formed below the wiring layer 16 (25), so that the aluminum alloy layer 14 (23) and the titanium film 10 (19) are formed. Therefore, the resistance of the aluminum alloy layer 14 (23) can be prevented from increasing while maintaining the reflow property of the aluminum alloy layer 14 (23). As a result, an increase in the wiring resistance of the wiring layer 16 (25) can be prevented, so that the wiring layer 16 (25) having a low-resistance wiring resistance can be obtained.

(Fourth Embodiment) FIG. 10 is a schematic sectional view showing a semiconductor integrated circuit device according to a fourth embodiment of the present invention.

The semiconductor integrated circuit device according to the present embodiment is an embodiment in which the titanium film 10 (19) in the semiconductor integrated circuit device according to the third embodiment described above is omitted.

According to the semiconductor integrated circuit device of the present embodiment, the low-resistance titanium film 10 is formed under the wiring layer 16 (25).
The contact resistance may increase due to the absence of (19). However, the contact resistance can be increased by using a titanium nitride film that contains 80% or more of titanium in the titanium-rich titanium nitride film 13 (22). Can be reduced. In particular, in order to reduce the contact resistance,
When the titanium of the titanium-rich titanium nitride film 13 (22) is 8
By providing a titanium nitride film containing 0% or more,
The contact resistance with the semiconductor substrate 1 made of a silicon substrate or the like (semiconductor substrate not provided with the contact region 7 made of a titanium silicide film) 1 can be reduced.

(Fifth Embodiment) FIG. 11 is a schematic sectional view showing a semiconductor integrated circuit device according to a fifth embodiment of the present invention.

In the semiconductor integrated circuit device of the present embodiment, when forming the plug 12 (21) in the above-described first embodiment, the tungsten film is
After being formed with a thickness of about nm, the tungsten film other than the through hole 9 (18) is removed by using the CMP method, and the plug 12 (21) made of the tungsten film embedded in the through hole 9 (18) is formed. ).

Therefore, according to the semiconductor integrated circuit device of the present embodiment, the through hole 9 is formed by using the CMP method.
At the time of polishing for removing the tungsten film other than (18), the titanium nitride film 11 (20) and the titanium film 10 (19) each containing 50% of titanium below the tungsten film.
Can be polished, so that through-hole 9 (18)
12 made of tungsten film embedded in
The surface of (21) can be made flush with the surface of the insulating film 8 (17), and the titanium-rich titanium nitride film 13 (22), which is the lower film of the wiring layer 16 (25), is formed on the insulating film 8 (17). ). As a result, the planarization of the wiring layer 16 (25) can be improved, so that fine processing can be performed.

Although the invention made by the inventor has been specifically described based on the embodiments of the present invention, the present invention is not limited to the above embodiments, and various modifications may be made without departing from the gist of the invention. Needless to say, it can be changed.

For example, according to the present invention, a semiconductor substrate forming a semiconductor element can be changed to various substrates such as an SOI (Siliconon Insulator) substrate. As a semiconductor element formed on a substrate such as a semiconductor substrate, MOSFET
In addition, a semiconductor element in which various semiconductor elements such as a CMOSFET and a bipolar transistor are combined can be applied.

Further, the present invention relates to a MOSFET, a CMOS,
Logic or DRA with FET etc. as components
M (Dynamic Random Access Memory), SRAM (Stat
The present invention can be applied to various semiconductor integrated circuit devices having a memory system such as an IC (Random Access Memory) and a method of manufacturing the same.

[0058]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). According to the semiconductor integrated circuit device of the present invention, the wiring layer has a three-layer structure of a titanium-rich titanium nitride film / aluminum alloy layer / titanium-rich titanium nitride film, so that it can be used as a subsequent interlayer insulating film. During the heat treatment such as the manufacturing process of the insulating film, the reaction between the aluminum alloy layer and titanium in the titanium-rich titanium nitride film can be prevented, so that the resistance of the aluminum alloy layer can be prevented from increasing. As a result, it is possible to prevent the wiring resistance of the wiring layer from increasing,
A wiring layer having low-resistance wiring resistance can be obtained.

In this case, as a result of the study by the present inventors, a titanium-rich titanium nitride film is a titanium nitride film containing 70 to 95% of titanium (the ratio of titanium to nitrogen in the titanium nitride film is 70%: 30% to 95%: 5% titanium nitride film). The aluminum alloy layer is an aluminum alloy layer containing 5% or less of at least one material of silicon, copper, magnesium, germanium, zinc, and gallium.

(2). According to the semiconductor integrated circuit device of the present invention, since the wiring layer has a three-layer structure of a titanium-rich titanium nitride film / aluminum alloy layer / a titanium-rich titanium nitride film, a titanium-rich titanium nitride film is provided. The aluminum alloy layer deposited on the
By improving the orientation, wiring reliability is improved, and a highly reliable wiring layer can be obtained.

Further, since the reaction between the aluminum alloy layer and titanium in the titanium-rich titanium nitride film can be prevented, the resistance of the aluminum alloy layer can be prevented from increasing, and the orientation of the aluminum alloy layer can be improved. By improving the degree, the wiring layer can be finely processed and can be a high-performance and highly reliable wiring layer.

(3). According to the method of manufacturing a semiconductor integrated circuit device of the present invention, a reactive sputtering method or a CVD method is used.
After forming a titanium-rich titanium nitride film using the method, an aluminum alloy layer is formed in the same vacuum system such as a reactive sputtering device, and then in the same vacuum system such as a reactive sputtering device. By forming the titanium-rich titanium nitride film, a high-performance and highly-reliable wiring layer can be manufactured by a simple manufacturing process.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view illustrating a manufacturing process of a semiconductor integrated circuit device according to a first embodiment of the present invention;

FIG. 2 is a schematic sectional view showing a manufacturing process of the semiconductor integrated circuit device according to the first embodiment of the present invention;

FIG. 3 is a schematic sectional view showing a manufacturing step of the semiconductor integrated circuit device according to the first embodiment of the present invention;

FIG. 4 is a schematic sectional view showing a manufacturing step of the semiconductor integrated circuit device according to the first embodiment of the present invention;

FIG. 5 is a schematic sectional view showing a manufacturing step of the semiconductor integrated circuit device according to the first embodiment of the present invention;

FIG. 6 is a schematic sectional view showing a manufacturing step of the semiconductor integrated circuit device according to the first embodiment of the present invention;

FIG. 7 is a schematic sectional view showing a manufacturing step of the semiconductor integrated circuit device according to the first embodiment of the present invention;

FIG. 8 is a schematic sectional view showing a semiconductor integrated circuit device according to a second embodiment of the present invention;

FIG. 9 is a schematic sectional view showing a semiconductor integrated circuit device according to a third embodiment of the present invention.

FIG. 10 is a schematic sectional view showing a semiconductor integrated circuit device according to a fourth embodiment of the present invention.

FIG. 11 is a schematic sectional view showing a semiconductor integrated circuit device according to a fifth embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor substrate (substrate) 2 Field insulating film 3 Gate insulating film 4 Gate electrode 5 Sidewall spacer 6 Semiconductor region 7 Contact region 8 Insulating film 9 Through hole 10 Titanium film 11 Titanium nitride film containing 50% titanium 12 Plug Reference Signs List 13 titanium-rich titanium nitride film 14 aluminum alloy layer 15 titanium-rich titanium nitride film 16 wiring layer 17 insulating film 18 through hole 19 titanium film 20 titanium nitride film containing 50% of titanium 21 plug 22 titanium-rich titanium nitride Film 23 aluminum alloy layer 24 titanium-rich titanium nitride film 25 wiring layer 26 thin film 27 thin film

Claims (9)

[Claims] 1. A semiconductor integrated circuit device, wherein a titanium nitride film containing 70 to 95% of titanium is formed below an aluminum alloy layer as a wiring layer. 2. The semiconductor integrated circuit device according to claim 1, wherein a titanium nitride film containing 70 to 95% of titanium is formed on the aluminum alloy layer as the wiring layer. A semiconductor integrated circuit device characterized by the above-mentioned. 3. The semiconductor integrated circuit device according to claim 1, wherein the aluminum alloy layer contains 5% or less of at least one material of silicon, copper, magnesium, germanium, zinc, and gallium. A semiconductor integrated circuit device comprising an aluminum alloy layer. 4. The semiconductor integrated circuit device according to claim 1, wherein a part of said wiring layer is formed in a connection hole formed in an insulating film below said wiring layer. A semiconductor integrated circuit device which is embedded. 5. A titanium nitride film containing 70 to 95% of titanium is formed on a substrate on which a semiconductor element is formed, and then an aluminum alloy layer is formed. Forming a wiring layer composed of the titanium nitride film and the aluminum alloy layer included in the method. 6. The method for manufacturing a semiconductor integrated circuit device according to claim 5, wherein a titanium nitride film containing 70 to 95% of titanium is formed on the aluminum alloy layer, whereby titanium is formed. 70 to 95% of the titanium nitride film, the aluminum alloy layer, and titanium
A method for manufacturing a semiconductor integrated circuit device, comprising the step of forming a wiring layer composed of the titanium nitride film containing 95%. 7. The method for manufacturing a semiconductor integrated circuit device according to claim 5, wherein the aluminum alloy layer comprises:
5% or less of silicon, copper, magnesium, germanium,
A method for manufacturing a semiconductor integrated circuit device, comprising using an aluminum alloy layer containing at least one material of zinc and gallium. 8. The method for manufacturing a semiconductor integrated circuit device according to claim 5, wherein said titanium nitride film is formed by a reactive sputtering method or a CV method.
A method of manufacturing a semiconductor integrated circuit device, wherein a method D is used. 9. The method of manufacturing a semiconductor integrated circuit device according to claim 5, wherein said aluminum alloy layer and said titanium nitride film are formed in the same vacuum system. A method for manufacturing a semiconductor integrated circuit device, comprising: