JPH113856A - Method and device for projection exposure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To correct longitudinal and transversal magnification components, by providing a longitudinal and transversal magnification correcting mechanism which can generate an arbitrary projection magnification between one axis in a plane of projection and another axis perpendicular to the axis against a stepper and, at the same time, can arbitrarily set the directions of the axes. SOLUTION: In a longitudinal and transversal magnification correcting mechanism 5, an actuator 52 which bends a parallel flat plate 51 by an arbitrary bending amount is placed on a θ-stage 53 which can be rotated around the optical axis 6a of a projection lens, and a θ-driving motor 55 which rotates the stage 53 by a designated angle is fixed on a supporting base 54. When the plate 51 is symmetrically with respect to a specific axis (α-axis), a primary enlarging or reducing magnification change can be given in the β-axis direction which is perpendicular to the α-axis without giving any influence on the α-axis direction and, when the whole body of the mechanism 5 is rotated around the optical axis 6a by controlling the bending amount (h) of the plate 51 a as a variable amount, the α-axis can be made coincident with an arbitrary direction while the longitudinal and transversal magnifications are controlled. Therefore, longitudinal and transversal magnification components can be corrected.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure method and a projection exposure apparatus using a step-and-repeat method or a step-and-scan method for manufacturing a semiconductor device. The present invention relates to a projection exposure method and a projection exposure apparatus that can perform projection exposure.

[0002]

2. Description of the Related Art In a process of manufacturing a semiconductor integrated circuit, there are usually ten or more photolithography steps. In the photolithography process, a step-type projection exposure device called a stepper is used as a projection exposure device, and alignment and exposure are performed on the pattern formed in the previous process.

[0003] Although the center of each shot coincides with the superposition error generated at this time, a position shift may occur at the periphery. It has been found that the causes of the positional deviation are roughly divided into a shot rotation error, a magnification error, and a distortion error.

[0004] Various proposals have been made for a means for correcting a rotation error, but there are situations in which correction of magnification and distortion is not yet sufficient. Factors that cause magnification and distortion include: Changes in the pattern due to expansion and contraction of the wafer due to the heat treatment that occurs during the wafer process. Changes in projection magnification and distortion due to environmental changes such as atmospheric pressure, differences in lighting conditions, etc. There is a difference in magnification, distortion, etc. of each projection lens caused by a different projection exposure apparatus used in each process.

Usually, in order to reduce errors in magnification and distortion, a projection lens having a magnification varying mechanism is mounted on a projection exposure apparatus. The variable magnification mechanism corrects the primary magnification component symmetrical with respect to the center of the optical axis of the projection lens, and eliminates the error caused by the above error factors.

On the other hand, the recent trend of high integration of semiconductor device manufacturing has new requirements, namely, enlargement of shot size and uniformization of resolution line width. In order to meet the demand, there has been proposed a step & scan type projection exposure apparatus that synchronously scans and exposes a reticle and a wafer for each shot. A step-and-scan type projection exposure apparatus requires a longer processing time than a conventional stepper type projection exposure apparatus that performs exposure all at once for each shot. Therefore, an optimal projection exposure apparatus is used in combination for each process. It is thought that.

[0007] In the step & scan type projection exposure apparatus, the above-mentioned error factors known in the related art steppers are used.
There is a new distortion in addition to the magnification and distortion. That is, in the step & scan type projection exposure apparatus, when the scan axis of the reticle is not parallel to the scan axis of the wafer and has a certain angle, a distortion called a skew occurs in which the projected rectangular reticle image is distorted into a parallelogram. .

Accordingly, in addition to the conventional error factors, A new error factor called skew distortion of a parallelogram due to the difference in the type of projection exposure apparatus is added. The step-and-scan projection exposure apparatus can correct the skew by overlapping the wafer pattern by generating the same amount of skew. However, the stepper can correct only the magnification and rotation that are rotationally symmetric with respect to the optical axis, and cannot correct the skew.

[0009]

However, as the demands on the overlay accuracy become stricter, there is an increasing demand for correcting components which could not be corrected or have not been corrected conventionally. As for the magnification and distortion of the above-mentioned error factors, there is a problem that the residual after the first-order magnification component correction should be made smaller, and the skew of the error factor which could not be corrected conventionally should be corrected by a stepper. is there.

In order to further reduce the manufacturing cost, there is a demand to increase the production efficiency by optimally combining a projection exposure apparatus with high productivity and a projection exposure apparatus with high resolution performance. For this reason, there is a need to improve the overlay accuracy in which several devices are mixed and used, so-called matching between devices.

According to the inventor's analysis of an overlay error in a shot between devices when several types of devices are used, the error between the third-order distortion component and the vertical and horizontal magnifications after the correction of the primary magnification component is reduced. Turned out to be dominant.
Here, the vertical and horizontal magnifications express the in-plane non-uniformity of the magnification of the transferred image of the projection optical system of the projection exposure apparatus, which has essentially no direction, and hereinafter, the direction in which the magnification is large is the long axis, and the direction orthogonal to the short axis is the short axis. I will call it.

[0012] In particular, the vertical and horizontal magnification is not only the size, but also
It has been found that whether or not the directions of the long axes match also greatly affects the matching accuracy between the devices.

Regarding the vertical and horizontal magnifications, furthermore, when the process to be superimposed is different in the x-axis direction and the y-axis direction taken in the projection plane, if the magnification change differs for each process through the process, the primary It has been found that simply correcting the projection magnification causes a superposition error in a shot.

It is also known that the exposure energy is absorbed in the projection lens to change the lens shape, causing a change in the projection magnification. If the exposure light is uniformly incident on the projection lens, the change in magnification becomes uniform within the projection plane.However, if the exposure light is unequally irradiated on the projection lens due to circuit pattern restrictions, etc., the projection magnification will increase. It has also become clear that a phenomenon of vertical and horizontal differences occurs.

In the stepper, in order to reduce the overlay error, it is necessary to correct even the components which have not been targeted conventionally. One of them is the above-described vertical and horizontal magnification components, and the other is a skew component that has not conventionally occurred in a stepper.

The generation of the skew component is based on a new circumstance that a step & scan type projection exposure apparatus has appeared and it has been required to overlap the apparatus with a stepper. The conventional stepper naturally has no correction function for this error inherent in the step & scan type projection exposure apparatus. However, in order to improve the overlay accuracy, the stepper also needs to have a skew correction function.

[0017]

In order to achieve the above object, the projection exposure method and the projection exposure apparatus of the present invention are characterized in that a stepper is provided with a means for newly correcting the vertical and horizontal magnification and skew.

Means for correcting the projection magnification in the aspect ratio;
It is characterized by having means for generating a magnification difference with respect to the orthogonal axis direction and means for adjusting the axis in an arbitrary direction, and controlling the vertical and horizontal magnification in accordance with the correction amount.

Regarding the skew, the stepper incorporates a mechanism in which only one axis is variable in magnification and is rotatable around the optical axis of the projection lens. Alternatively, correction is performed by combining wafer rotation to improve the overlay accuracy.

As can be seen from the above description, in practice, the correction of the aspect ratio and the skew can be achieved by incorporating the same mechanism into a conventional stepper.

For correction, the stepper has a means for measuring coordinates, and the projection magnification, the difference between the horizontal and vertical magnifications, the skew, etc. can be determined and corrected based on the measured values by the measuring means, thereby greatly improving the overlay accuracy. Is possible.

[0022]

FIG. 1 is a schematic view of a main part of a projection exposure apparatus according to a first embodiment of the present invention. In the figure, reticle 3
The circuit pattern drawn above is stepped onto a wafer 7a placed on a wafer stage 7 by a projection lens 6.
Reduction projection is performed by a repeat method or a step & scan method.

A known magnification correction mechanism is provided in the projection lens 6, and changes in projection magnification due to environmental changes such as atmospheric pressure, and pattern magnification on the wafer and reticle projection images generated by expansion and contraction of the wafer due to the effects of processes and the like. Is corrected.

The projection exposure apparatus of the present invention is characterized in that a vertical and horizontal magnification correcting mechanism 5 is mounted between the reticle 3 and the projection lens 6 in addition to a conventional magnification correcting mechanism.

FIG. 2 is a configuration diagram of the vertical and horizontal magnification correcting mechanism 5 according to the present invention. A parallel flat glass plate (parallel flat plate) 51 and an actuator 52 for bending the glass plate 51 by an arbitrary deflection amount are mounted on a θ stage 53 rotatable about the optical axis 6 a of the projection lens 6. The θ drive motor 55 for rotating the θ stage 53 to the designated angle
4 is fixed.

When the parallel flat plate 51 is flexed on a quadratic curve symmetrically with respect to a specific axis (α axis), there is no effect on the α axis direction, and the enlargement or reduction direction is changed in the β axis direction perpendicular to the α axis. Of 1
The following magnification changes can be given: There is a predetermined relationship between the deflection amount h of the parallel plate 51 and the change amount γ of the projection magnification,
By controlling the deflection amount h as a variable amount and rotating the entire vertical / horizontal magnification correction mechanism 5 about the optical axis 6a,
The α axis can be made to coincide with an arbitrary direction while controlling the vertical and horizontal magnifications. In the range where the deflection amount h is small, the deflection amount h
And the change amount γ may be considered to be in a proportional relationship.

The downward bending shown in FIG. 1 enlarges the magnification in the β-axis direction, but decreases when it is bent to the opposite side. By making the amount of deflection h variable in the positive and negative directions, the rotation stroke of the vertical and horizontal magnification correcting mechanism 5 around the optical axis can be reduced.

The vertical / horizontal magnification difference is defined by defining a direction in which a magnification error occurs in the largest direction with respect to a predetermined projection magnification in a projection plane as a long axis and a direction orthogonal to the long axis as a short axis. I do. The vertical / horizontal magnification difference Δk is represented by Δk = (projection magnification of long axis) / (projection magnification of short axis), and rectangular coordinates x, y in which the direction θ of the long axis is set on the projection plane
With respect to the y-axis.

FIG. 3 shows a method of correcting the vertical and horizontal magnifications. FIG.
As shown in (A), the vertical and horizontal magnification difference of the projection lens to be corrected is Δk1, and the major axis direction is θ1. Under the influence of the vertical and horizontal magnifications, the originally rectangular circuit pattern is transferred by being distorted into a parallelogram by the projection lens. The vertical / horizontal magnification generated in FIG. 3A can be corrected by making the α axis of the vertical / horizontal magnification correcting mechanism of FIG. 2 coincide with θ1, and setting the deflection amount h to Δk1 / (γ / h).

Therefore, if the vertical / horizontal magnification correcting mechanism shown in FIG. 2 is mounted on a stepper, the absolute value of the vertical / horizontal magnification can be reduced. Further, the difference between the vertical and horizontal magnifications can be corrected even in a combination between apparatuses, so that it is not necessary to consider it.

Here, a procedure for actually operating the vertical / horizontal magnification correcting mechanism 5 of FIG. 2 in a combination between apparatuses will be described. In normal superposition, the vertical / horizontal magnification difference is set so that the relative deviation between the processes with respect to the reference process is minimized. Here, an example in which the reference process is created by the device A and the superimposing process is performed by the device B will be described with reference to FIG.

As shown in FIG. 3A, the vertical and horizontal magnification difference of the projection lens of the apparatus A is set to Δk1, the major axis direction is set to θ1, and the vector of the length k1 in the major axis direction is displayed as the vertical and horizontal magnification difference. Define.

As shown in FIG. 3B, the difference between the vertical and horizontal magnifications of the projection lens of the apparatus B is set to Δk2, and the major axis direction is set to θ.
2. A vector having a length k2 is defined in the major axis direction as the display of the vertical / horizontal magnification difference. FIG. 3 (C) is a drawing in which FIG. 3 (A) and FIG. 3 (B) are overlapped. In the case where there is no conventional mechanism for correcting the vertical and horizontal magnifications, only the entire magnification is corrected and superimposed. k3 which is the difference between the vector of k1 and the vector of k2
The vertical and horizontal magnification difference occurs. If this amount is Δk3 and the major axis direction is θ3, an overlay error as shown in FIG. 3D occurs.

Therefore, when the reference process created by the apparatus A is superimposed by the apparatus B, the α-axis is made coincident with θ3 by the vertical / horizontal magnification correction mechanism 5 in FIG.
Control is performed so as to correct k3. As a result, it is possible to correct the distortion of the difference between the vertical and horizontal magnifications of the projection lenses between the devices, and reduce the overlay error.

A magnification error which is rotationally symmetric with respect to the optical axis and is generated in the process of correcting the difference between the vertical and horizontal magnifications is corrected by a magnification correcting function in a conventional projection lens. Further, as shown in FIG. 3D, a rotation error indicated by rot3 is generated in the shot although it is minute depending on the direction of the vertical and horizontal magnifications to be corrected. Since this amount can be easily calculated from the vertical and horizontal magnification difference and the direction, by performing the rotation correction driving of the reticle or the wafer by the amount when performing the overlapping operation,
Overlay errors can be further reduced.

The vertical / horizontal magnification correction mechanism 5 can also be used for skew correction. Embodiment 2 of the present invention is skew correction. FIG. 4 shows a procedure for correcting skew. Assume that there is a wafer pattern in which a skew having an angle θa with respect to the y-axis has occurred as shown in FIG. The wafer pattern is printed by, for example, a step & scan type projection exposure apparatus. The difference between the vertical and horizontal magnifications generated by the vertical and horizontal magnification correcting mechanism 5 is defined as Δka, and a deflection amount of Δka = 0.5 × tan θa is set as Δka as shown in FIG. 4B, and the direction of the long axis is 45 degrees. Adjust the β axis to.

Here, FIG. 4C shows that the projection magnification is corrected so that the entire magnification is distributed. In this state, since the shot rotation θc remains, the correction of θc by the reticle rotation is the correction result of FIG. 4D, and the pattern distortion of FIG. 4A is realized and the skew can be corrected. it can.

In the case of superposing a wafer pattern having a screen size of □ 20 mm, a skew amount of 1 ppm and no other error at all with a stepper having no aberration, an alignment error generated at a corner portion is obtained. Is 1
0 nm. The vertical / horizontal magnification difference having the major axis in the 45-degree direction is set to 0.5p by the vertical / horizontal magnification correcting mechanism 5 of the present invention using a stepper.
pm and rotating the reticle by 0.5 ppm,
A skew of exactly 1 ppm can be generated, and a positioning error at a corner can be almost zero.
If the direction of the skew is a downward-sloping direction opposite to that of FIG. 4, the β axis is adjusted so that the direction of the long axis becomes 135 degrees. The rest can be similarly corrected.

Actually, the step & scan apparatus has a projection magnification error and a scan magnification error, and the stepper also has a projection magnification error and a vertical and horizontal magnification error. Therefore, when performing the correction on the stepper side, it is necessary to optimally select the projection magnification correction amount, the correction angle and correction amount of the vertical and horizontal magnifications, and the rotation correction amount of the wafer or reticle.

A procedure for monitoring the state of the projection optical system for the above correction by the projection optical system will be described as a third embodiment. The TTL alignment scope 2 is mounted on the projection exposure apparatus of FIG. The alignment scope 2 passes through a projection lens 6 to mark 3 on a reticle 3 shown in FIG.
Since the position deviation between a and the mark 9a on the reference plate 9 placed on the wafer stage 7 can be measured, the state of the projection lens 6 can be monitored.

The TTL alignment scope 2 drives a plurality of marks on the reference reticle 3 and a plurality of marks on the reference plate 9 at positions corresponding to the marks on the reticle 3 while driving the object position. Can be measured. It is possible to monitor a change in the projection grating such as the magnification of the projection lens 6 by the measurement. Since the reference plate 9 is on the wafer stage 7, the mark on the reference plate 9 may be one point. Even at one point, by measuring a plurality of marks on the reticle 3 while driving the wafer stage 7, it is possible to measure a change in the projection grating such as the magnification of the projection lens 6 based on the stage coordinates.

By performing the above measurement periodically and controlling the projection magnification and the difference between the vertical and horizontal magnifications based on the amount of change in the projection grid, a stable projection state can be always maintained.
With such measurement, for example, it is also possible to correct a change in the projection coordinates of the projection lens due to exposure or the like.

Embodiment 4 of the present invention is a system using a photochromic material as a method of measuring a projection grating. When photochromic material is exposed to light of a certain wavelength,
It is a material whose transmittance changes at that location.

Using the principle, a photochromic material is coated on a wafer, mounted on a wafer stage 7 and sent under a projection lens 6, and then irradiated with exposure light from an illumination system 1 to form a reticle image. Bake on the photochromic material on the wafer. Wafer stage 7 as it is
Is driven to measure the reticle image printed by the off-axis alignment scope 8, the projection grating of the projection lens can be measured based on the coordinates of the wafer stage 7.

By performing the above measurement periodically and controlling the projection magnification and the difference between the vertical and horizontal magnifications based on the measured value of the projection grid, a stable projection state can be always maintained.

Next, a fifth embodiment of the present invention will be described with reference to a method for aligning a wafer on which a previous process has been performed by a step & scan type projection exposure apparatus with a stepper according to the present invention.

The off-axis alignment scope 8 measures the alignment mark 10a on the wafer placed on the wafer stage 7. The wafer has been exposed in a previous step by a step-and-scan type projection exposure apparatus as shown in FIG. By measuring a plurality of marks in a plurality of shots when measuring the alignment mark 10a, a shot arrangement error (position shift, magnification,
Rotation, orthogonality) and intra-shot errors (magnification, rotation, skew, difference in vertical and horizontal magnification) can be separated.

It is preferable to select a plurality of shots in a well-balanced manner with respect to the center of the wafer, and to select a plurality of marks, it is preferable to select four shots near the corner of the shot.

As a result, if the coordinates of the wafer stage are corrected for the shot arrangement, the projection magnification, the vertical and horizontal magnification correction (angle and amount), and the rotation of the wafer or reticle are corrected for the errors in the shot, the step-and-scan type projection is performed. Even a wafer pattern created by an exposure apparatus can be accurately aligned and exposed.

In the fifth embodiment, a method of observing a wafer using an off-axis alignment scope has been described.
The same can be realized by using the TTL alignment scope 2 as the sixth embodiment. The TTL alignment scope 2 is equipped with a system capable of position measurement using exposure light, and can directly detect misalignment between the reticle 3 and the wafer. Alignment scope 2
In this case, since the error of the wafer and the error of the apparatus are observed in a superimposed state, the correction amount can be directly obtained. In this case, the drive amount of the vertical and horizontal magnification correction mechanism, the magnification correction mechanism, and the rotation correction of the reticle or the wafer is determined by the measurement value by the TTL alignment scope as the in-shot correction component.

In the fifth and sixth embodiments, an example has been described in which a plurality of points in a shot are measured and correction is performed based on the measurement results.
The overlay is evaluated in advance using the preceding wafer,
It is also possible to use the evaluation result. The precedent wafer is a wafer that is actually subjected to exposure processing on a trial basis prior to production. Based on the evaluation results, a certain projection magnification and a certain horizontal and vertical magnification (angle, amount) are used for errors in the shot.
By performing the rotation correction of the wafer or the reticle, and performing only the shot arrangement correction for each wafer,
The number of alignment mark measurement points in a shot can be reduced, and an improvement in throughput can be achieved.

[0052]

As described above, according to the present invention, in a stepper which is a step-type projection exposure apparatus, an arbitrary projection magnification is generated between one axis in a projection plane and an axis orthogonal to the axis. In addition, by providing a mechanism in the projection optical system that can arbitrarily set the direction of the axis, it is possible to correct vertical and horizontal magnification components and skew components that have not been conventionally corrected. For this reason, matching between devices when a plurality of devices are used, and overlay accuracy with a wafer pattern created by a step-and-scan type projection exposure device are dramatically improved, and high integration is required. It has become possible to meet the demands for semiconductor device fabrication.

In the present invention, since the overlay accuracy between a plurality of devices is improved, the width of the optimum combination of a high-productivity device and a high-resolution device required to reduce the manufacturing cost is reduced. It can be expanded, which greatly contributes to the improvement of production efficiency.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a projection exposure apparatus according to a first embodiment of the present invention,

FIG. 2 is a vertical and horizontal magnification correction mechanism of the present invention;

FIG. 3 is a diagram showing a correction procedure when an aspect ratio occurs;

FIG. 4 is a diagram showing a correction procedure when skew occurs;

FIG. 5 shows an example of a mark on a reticle and a reference plate;

FIG. 6 is a wafer pattern created by a step & scan projection exposure apparatus.

[Explanation of symbols]

 Reference Signs List 1 illumination system, 2 alignment scope, 3 reticle, 4 reticle stage, 5 vertical / horizontal magnification correction mechanism, 6 projection lens, 7 wafer stage, 8 off-axis alignment scope, 9 reference plate, 10 wafer alignment mark, 51 glass plate, 52 deflection Drive actuator, 53θ stage, 54 support base, 55θ drive motor.

Claims (35)

[Claims] 1. A projection exposure apparatus for exposing and transferring an image of a first object onto a second object by a projection optical system, wherein the projection optical system is orthogonal to one axis direction in a projection plane on which an image is formed. A projection exposure apparatus comprising a vertical / horizontal magnification correction mechanism for generating an arbitrary projection magnification difference between the orthogonal axes. 2. The projection exposure apparatus according to claim 1, wherein the vertical / horizontal magnification correction mechanism can arbitrarily select one axial direction in the projection plane. 3. The projection exposure apparatus according to claim 2, wherein said projection optical system includes a magnification correction mechanism. 4. The projection exposure apparatus according to claim 3, wherein the vertical / horizontal magnification correction mechanism is disposed between the first object and the projection optical system. 5. The projection exposure apparatus according to claim 4, wherein said vertical / horizontal magnification correction mechanism comprises a mechanism capable of variably bending a parallel plate by a predetermined amount. 6. The projection exposure apparatus according to claim 5, wherein said vertical / horizontal magnification correcting mechanism deflects the parallel plate into a quadratic curve symmetrical with respect to a predetermined axis. 7. The projection exposure apparatus according to claim 6, wherein the amount of deflection of the parallel plate of the vertical / horizontal magnification correction mechanism can be controlled in two positive and negative directions. 8. The projection exposure apparatus according to claim 3, wherein when driving the vertical and horizontal magnification correcting mechanism, the magnification correcting mechanism is simultaneously driven. 9. The projection exposure apparatus according to claim 8, wherein when driving the vertical and horizontal magnification correcting mechanism and the magnification correcting mechanism, the first object is rotated. 10. The projection exposure apparatus according to claim 8, wherein when driving the vertical and horizontal magnification correcting mechanism and the magnification correcting mechanism, the second object is rotated. 11. The apparatus according to claim 1, wherein the axis of the vertical / horizontal magnification correcting mechanism is approximately 4 with respect to the x and y axes set in the projection plane of the projection exposure apparatus.
4. The projection exposure apparatus according to claim 3, wherein the direction is set to 5 degrees, and the vertical / horizontal magnification difference Δk1 is generated by Δk1 = 0.5 × tan θ1 when the skew generation direction is θ1 with respect to the y-axis. 12. The apparatus according to claim 1, wherein the axis of the vertical / horizontal magnification correction mechanism is approximately 4 with respect to the x and y axes set in the projection plane of the projection exposure apparatus.
The projection exposure apparatus according to claim 11, wherein the projection exposure apparatus is set to a direction of 5 degrees and simultaneously drives rotation of the magnification correction mechanism and the first object. 13. The apparatus according to claim 1, wherein the axis of the vertical / horizontal magnification correction mechanism is approximately 4 with respect to the x and y axes set in the projection plane of the projection exposure apparatus.
13. The projection exposure apparatus according to claim 12, wherein the direction is set to 5 degrees and the magnification correction mechanism and the rotation of the second object are simultaneously driven. 14. A TTL provided in the projection exposure apparatus, wherein a drive amount of the vertical / horizontal magnification correction mechanism and the magnification correction mechanism is controlled.
9. The projection exposure apparatus according to claim 8, wherein the determination is performed using a measurement value obtained by an alignment scope. 15. The projection exposure apparatus according to claim 14, wherein the measurement by the TTL alignment scope is performed using a mark on the first object serving as a reference and a reference mark provided on a projection plane. 16. The measurement of the TTL alignment scope is performed using a plurality of marks provided on the first object and a plurality of reference marks provided at corresponding positions on the projection plane. 16. The projection exposure apparatus according to claim 15, wherein: 17. The method according to claim 1, wherein the measurement of the TTL alignment scope is performed while driving one reference mark provided on the projection plane with respect to a plurality of marks provided on the first object. The projection exposure apparatus according to claim 15. 18. A method for determining a rotation correction drive amount of the vertical / horizontal magnification correction mechanism, the magnification correction mechanism, and the first or second object using a measurement value of a TTL alignment scope provided in the projection exposure apparatus. The projection exposure apparatus according to claim 14, wherein: 19. The projection exposure apparatus according to claim 18, wherein the measurement of the TTL alignment scope is performed based on a result of observing a plurality of marks provided on the first object and a wafer. 20. The apparatus according to claim 8, wherein the drive amounts of the vertical and horizontal magnification correcting mechanism and the magnification correcting mechanism are determined by using a measurement value obtained by an off-axis alignment scope provided in the projection exposure apparatus. Projection exposure equipment. 21. A driving amount of the vertical and horizontal magnification correction mechanism, the magnification correction mechanism, and the rotation correction of the first or second object,
21. The projection exposure apparatus according to claim 20, wherein the determination is performed using a measurement value obtained by an off-axis alignment scope provided in the projection exposure apparatus. 22. The projection exposure apparatus according to claim 21, wherein the measurement by the off-axis alignment scope is performed using a photochromic material exposed by the projection exposure apparatus. 23. The projection exposure apparatus according to claim 21, wherein the measurement by the off-axis alignment scope is performed by observing an alignment mark formed on a wafer. 24. The projection exposure apparatus according to claim 23, wherein the alignment marks to be observed are a plurality of marks in a plurality of shots. 25. According to the measurement by the off-axis alignment scope, the arrangement of the projection shots of the projection exposure apparatus is corrected by the coordinates of the stage on which the second object is mounted, and the correction within the shots is performed by the vertical / horizontal magnification correction mechanism. 25. The projection exposure apparatus according to claim 24, wherein the driving is performed by driving a magnification correction mechanism and a rotation mechanism of the first or second object. 26. In the alignment exposure of the first object and the second object, the in-shot error is corrected based on the evaluation of the second object that has been exposed earlier, by performing rotation correction of the first or second object. 9. The projection exposure apparatus according to claim 8, wherein magnification correction and vertical / horizontal magnification correction of the projection optical system are performed at fixed values, and only an error of the shot arrangement is corrected by coordinates of a stage on which the second object is mounted. 27. A projection exposure method using a projection exposure apparatus for exposing and transferring an image of a first object onto a second object by a projection optical system. A projection exposure method comprising: providing a vertical / horizontal magnification correction mechanism for generating a projection magnification difference between an orthogonal axis and an orthogonal axis orthogonal to one axis direction, and performing exposure while controlling the projection magnification difference. 28. When driving the vertical and horizontal magnification correcting mechanism,
28. The projection exposure method according to claim 27, wherein the driving of the magnification correction mechanism provided in the projection optical system and the rotation of the first or second object are performed together. 29. The axis of the vertical / horizontal magnification correcting mechanism is approximately 4 with respect to the x and y axes set in the projection plane of the projection exposure apparatus.
When the direction of the skew is set to θ1 with respect to the y axis, Δk1 = 0.5 × tanθ1 is generated, and the magnification correction mechanism and the first or second object are set. 29. The projection exposure method according to claim 28, wherein the rotation of the projection exposure is simultaneously performed. 30. A driving amount for the vertical and horizontal magnification correction mechanism, the magnification correction mechanism, and the rotation correction of the first or second object,
30. The projection exposure method according to claim 29, wherein the determination is performed using a measurement value obtained by a TTL alignment scope provided in the projection exposure apparatus. 31. The projection exposure method according to claim 30, wherein the measurement of the TTL alignment scope is performed using a mark on the first object serving as a reference and a reference mark provided on a projection plane. 32. The projection exposure method according to claim 30, wherein the measurement of the TTL alignment scope is performed based on a result of observing a plurality of marks provided on the first object and a wafer. 33. The vertical and horizontal magnification correction mechanism, the magnification correction mechanism, and the rotation correction drive amount of the first or second object are determined using values measured by an off-axis alignment scope provided in the projection exposure apparatus. 30. The projection exposure method according to claim 29, wherein: 34. According to the measurement by the off-axis alignment scope, the arrangement of the projection shots of the projection exposure apparatus is corrected by the coordinates of the stage on which the second object is mounted, and the correction within the shots is performed by the vertical and horizontal magnification correction. 34. The method according to claim 33, wherein the driving is performed by driving a mechanism, the magnification correction mechanism, and a rotation mechanism of the first or second object.
The projection exposure method as described in the above. 35. In the alignment exposure of the first object and the second object, the in-shot error is corrected based on the evaluation of the second object that has been exposed earlier, by performing the rotation correction of the first or second object. 28. The projection exposure method according to claim 27, wherein magnification correction and vertical / horizontal magnification correction of the projection optical system are performed at fixed values, and only an error in the shot arrangement is corrected based on coordinates of a stage on which the second object is mounted.