JPH11307568A - Semiconductor device and bonding method used for its manufacture - Google Patents

Semiconductor device and bonding method used for its manufacture

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Publication number
JPH11307568A
JPH11307568A JP11246098A JP11246098A JPH11307568A JP H11307568 A JPH11307568 A JP H11307568A JP 11246098 A JP11246098 A JP 11246098A JP 11246098 A JP11246098 A JP 11246098A JP H11307568 A JPH11307568 A JP H11307568A
Authority
JP
Japan
Prior art keywords
bonding
electrode
wire
bonding wire
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11246098A
Other languages
Japanese (ja)
Inventor
Hiroaki Murai
宏彰 村井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP11246098A priority Critical patent/JPH11307568A/en
Publication of JPH11307568A publication Critical patent/JPH11307568A/en
Pending legal-status Critical Current

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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device, the size of which can be reduced by reducing the occupying area of an electrode formed in its package, and at the same time, the electrical reliability of which can be improved by preventing the defective bonding between the electrode formed in the package and bonding wires. SOLUTION: A semiconductor device 1, mounted with a semiconductor element 2 in which a power transistor is formed, is provided with a columnar electrode 4. The other end sides (second bonding sides) of a plurality of bonding wires 6 are connected electrically to the electrode 4, in such a state that the other end sides are stacked upon another on the electrode 4. Each electrode 4 is composed of main columnar electrodes 4A, which hold the bonding wires 6 between them and a sub-columnar electrode 4B. The other end sides of the bonding wires 6 are cut off in the air, after being connected to the electrode 4.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体装置及びそ
の製造に使用されるボンディング方法に関する。特に本
発明は、パワートランジスタ等、半導体素子の同一電位
が印加される複数の外部端子にそれぞれボンディングワ
イヤが接続された半導体装置、及びそのボンディングワ
イヤのボンディング方法に関する。The present invention relates to a semiconductor device and a bonding method used for manufacturing the same. In particular, the present invention relates to a semiconductor device in which a bonding wire is connected to each of a plurality of external terminals to which the same potential of a semiconductor element such as a power transistor is applied, and a bonding method of the bonding wire.

【０００２】[0002]

【従来の技術】自動車の電気系統に組み込まれる半導体
装置としてパワートランジスタがある。この種の半導体
装置はパッケージ内部に例えばMOS（Metal Oxide Semic
onductor）型トランジスタが形成された半導体素子（半
導体チップ）を搭載する。2. Description of the Related Art There is a power transistor as a semiconductor device incorporated in an electric system of an automobile. Semiconductor devices of this type include, for example, MOS (Metal Oxide Semic
A semiconductor element (semiconductor chip) on which an onductor type transistor is formed is mounted.

【０００３】半導体素子の半導体基板はMOS型トランジ
スタのドレイン領域として使用される。パッケージのド
レイン電極から半導体基板の裏面に（ドレイン領域に）
は動作電流が供給される。A semiconductor substrate of a semiconductor device is used as a drain region of a MOS transistor. From the drain electrode of the package to the back of the semiconductor substrate (to the drain region)
Is supplied with an operating current.

【０００４】MOS型トランジスタのソース領域は半導体
基板の表面に配置された外部端子（ボンディングパッ
ド）に電気的に接続され、外部端子は半導体素子の外周
囲に配設されたソース電極に電気的に接続される。外部
端子とソース電極との間の接続は、外部端子に一端側が
接続され、ソース電極に他端側が接続されたボンディン
グワイヤで行われる。動作電流はソース領域から外部端
子及びボンディングワイヤを通してソース電極に流れ
る。[0004] The source region of a MOS transistor is electrically connected to an external terminal (bonding pad) disposed on the surface of a semiconductor substrate, and the external terminal is electrically connected to a source electrode disposed on the outer periphery of the semiconductor element. Connected. The connection between the external terminal and the source electrode is made by a bonding wire having one end connected to the external terminal and the other end connected to the source electrode. The operating current flows from the source region to the source electrode through the external terminal and the bonding wire.

【０００５】ボンディングワイヤは超音波振動を併用
し、又は超音波振動に熱圧着を併用してボンディング装
置によりボンディングされる。通常、半導体素子の外部
端子はファーストボンディング側として、ソース電極は
セカンドボンディング側として、それぞれボンディング
が行われる。[0005] The bonding wire is bonded by a bonding device using ultrasonic vibration or thermocompression together with ultrasonic vibration. Normally, bonding is performed with the external terminal of the semiconductor element being on the first bonding side and the source electrode being on the second bonding side.

【０００６】パワートランジスタにおいては大電流で駆
動電流が流れる。従って、電流容量を稼ぐため、外部端
子は複数配設され、この複数の外部端子のそれぞれとソ
ース電極との間の接続には比較的ワイヤ径の太い複数本
のボンディングワイヤが使用される。ソース電極は板状
電極板で形成され、複数本のボンディングワイヤのセカ
ンドボンディング側は所定の間隔で規則的にボンディン
グされる。In a power transistor, a driving current flows with a large current. Therefore, in order to increase current capacity, a plurality of external terminals are provided, and a plurality of bonding wires having a relatively large diameter are used for connection between each of the plurality of external terminals and the source electrode. The source electrode is formed of a plate-like electrode plate, and the second bonding side of the plurality of bonding wires is regularly bonded at predetermined intervals.

【０００７】なお、すべてのボンディングワイヤは同一
電位であるので、ボンディングワイヤ間の接触は許容さ
れている。Since all the bonding wires have the same potential, contact between the bonding wires is allowed.

【０００８】[0008]

【発明が解決しようとする課題】前述のパワートランジ
スタを構築する半導体装置においては、以下の点につい
て配慮がなされていない。In the semiconductor device for constructing the power transistor described above, no consideration is given to the following points.

【０００９】（１）半導体装置において、ソース電極に
は複数本のボンディングワイヤが所定間隔で複数箇所に
ボンディングされるので、セカンドボンディング領域と
しては広い面積を必要とし、ソース電極の面積が増大す
る。従って、パッケージサイズが増大し、半導体装置が
大型になる。(1) In a semiconductor device, since a plurality of bonding wires are bonded to a source electrode at a plurality of locations at predetermined intervals, a large area is required as a second bonding region, and the area of the source electrode is increased. Therefore, the package size increases and the semiconductor device becomes large.

【００１０】（２）高温熱処理を経て製造される半導体
素子の外部端子に比較してパッケージに形成されるソー
ス電極の電極材料は多岐にわたり選択されるので、ソー
ス電極とボンディングワイヤとの間のボンディング強度
にばらつきが発生する。最悪の場合、ソース電極からボ
ンディングワイヤが剥がれる、ボンディング不良が生じ
る。(2) Since the electrode material of the source electrode formed on the package is selected in a wider variety than the external terminals of the semiconductor device manufactured through the high-temperature heat treatment, bonding between the source electrode and the bonding wire is performed. Variations in strength occur. In the worst case, the bonding wire peels off from the source electrode, and a bonding failure occurs.

【００１１】本発明は上記課題を解決するためになされ
たものである。従って、本発明の目的は、パッケージに
形成された電極の占有面積を縮小し、装置の小型化が実
現できる半導体装置を提供することである。The present invention has been made to solve the above problems. SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a semiconductor device capable of reducing the area occupied by electrodes formed on a package and realizing miniaturization of the device.

【００１２】さらに、本発明の目的は、パッケージに形
成された電極とボンディングワイヤとの間のボンディン
グ不良を防止し、電気的信頼性が向上できる半導体装置
を提供することである。It is a further object of the present invention to provide a semiconductor device capable of preventing a bonding failure between an electrode formed on a package and a bonding wire and improving electrical reliability.

【００１３】さらに、本発明の目的は、上記半導体装置
を製造するためのボンディング方法を提供することであ
る。Still another object of the present invention is to provide a bonding method for manufacturing the above-mentioned semiconductor device.

【００１４】さらに、本発明の目的は、上記ボンディン
グ方法を実現するためのボンディング装置を提供するこ
とである。It is a further object of the present invention to provide a bonding apparatus for realizing the above bonding method.

【００１５】[0015]

【課題を解決するための手段】上記課題を解決するため
に、この発明の第１の特徴は、半導体装置において、半
導体素子、パッケージ、柱状電極及び複数本のボンディ
ングワイヤを備えたことである。In order to solve the above-mentioned problems, a first feature of the present invention is that a semiconductor device includes a semiconductor element, a package, a columnar electrode, and a plurality of bonding wires.

【００１６】半導体素子は同一電位が印加される複数の
外部端子（ボンディングパッド）を有する。半導体素子
にはパワートランジスタ、詳細にはパワーMOS型トラン
ジスタ又はパワーバイポーラ型トランジスタが実用的に
使用される。The semiconductor element has a plurality of external terminals (bonding pads) to which the same potential is applied. As the semiconductor element, a power transistor, specifically, a power MOS transistor or a power bipolar transistor is practically used.

【００１７】パッケージは半導体素子を搭載する。この
パッケージの半導体素子が搭載された外周囲には半導体
素子の外部端子と電気的な接続を確保する柱状電極が配
設される。The package mounts a semiconductor element. A columnar electrode for securing electrical connection with external terminals of the semiconductor element is provided around the outer periphery of the package where the semiconductor element is mounted.

【００１８】柱状電極は、複数本のボンディングワイヤ
と電気的な接続を確保しつつ、複数本のボンディングワ
イヤを高さ方向に積み重ねる。ボンディングワイヤの高
さ方向の積み重ねの概念には、ボンディングワイヤを１
列に積み重ねること、複数列で積み重ねる（束ねる）こ
と、がいずれも含まれる。柱状電極は、電気的な接続の
確保を主目的とするメイン柱状電極と、このメイン柱状
電極の近傍に配設されボンディングワイヤの挟持並びに
積み重ねを主目的とするサブ柱状電極と、を備えること
が好ましい。ボンディングワイヤは、メイン柱状電極と
サブ柱状電極との間に挟み込まれ、又はメイン柱状電
極、サブ柱状電極のいずれかに巻き付けられる。The columnar electrode stacks a plurality of bonding wires in the height direction while ensuring electrical connection with the plurality of bonding wires. The concept of stacking bonding wires in the height direction is based on
Both stacking in rows and stacking (bundling) in multiple rows are included. The columnar electrode may include a main columnar electrode mainly for securing electrical connection, and a sub-columnar electrode disposed near the main columnar electrode and mainly for holding and stacking bonding wires. preferable. The bonding wire is sandwiched between the main columnar electrode and the sub columnar electrode, or wound around either the main columnar electrode or the sub columnar electrode.

【００１９】複数本のボンディングワイヤは、半導体素
子の複数の外部端子にそれぞれの一端側をボンディング
し、柱状電極にそれぞれの他端側を電気的に接続しつつ
高さ方向に積み重ねる。ボンディングワイヤの一端側
は、ファーストボンディングとして、超音波振動を併用
し、又超音波振動及び熱圧着を併用しボンディングされ
る、ことが実用的である。ボンディングワイヤの他端側
は、セカンドボンディングとして、柱状電極に電気的に
接続される。基本的には、ボンディングワイヤの他端側
は超音波振動や熱圧着を併用したボンディングが必要な
い。ボンディングワイヤの他端側は柱状電極に電気的に
接続された（挟み込まれた又は巻き付けられた）後に切
断される。ボンディングワイヤの他端側と柱状電極との
間の電気的な接続を確実にするために、ボンディングワ
イヤの他端側は接着剤、好ましくは導電性接着剤により
被覆される。The plurality of bonding wires are stacked in the height direction while bonding one end of each of the bonding wires to the plurality of external terminals of the semiconductor element and electrically connecting the other end of the bonding wire to the columnar electrode. It is practical that one end side of the bonding wire is bonded by using ultrasonic vibration in combination or by using ultrasonic vibration and thermocompression bonding as first bonding. The other end of the bonding wire is electrically connected to the columnar electrode as second bonding. Basically, the other end of the bonding wire does not require bonding using ultrasonic vibration or thermocompression bonding. The other end of the bonding wire is cut after being electrically connected (sandwiched or wound) to the columnar electrode. To ensure electrical connection between the other end of the bonding wire and the columnar electrode, the other end of the bonding wire is coated with an adhesive, preferably a conductive adhesive.

【００２０】このように構成される半導体装置において
は、ボンディングワイヤの他端側（セカンドボンディン
グ側）が１カ所に束ねられ、しかも高さ方向に積み重ね
た状態で柱状電極に電気的に接続される。従って、複数
本のボンディングワイヤの他端側のボンディング領域の
占有面積が縮小でき、しかも占有面積が高さ方向に稼げ
る（高さ方向に空いている空間を利用できる）ので、半
導体装置の小型化が実現できる。さらに、ボンディング
ワイヤは柱状電極に挟み込まれるので、接続不良が防止
でき、電気的信頼性が高い半導体装置が実現できる。In the semiconductor device configured as described above, the other end (second bonding side) of the bonding wire is bundled in one place, and is electrically connected to the columnar electrode while being stacked in the height direction. . Therefore, the area occupied by the bonding region on the other end side of the plurality of bonding wires can be reduced, and the occupied area can be increased in the height direction (a space vacant in the height direction can be used), so that the semiconductor device can be downsized. Can be realized. Further, since the bonding wire is sandwiched between the columnar electrodes, a connection failure can be prevented, and a semiconductor device with high electrical reliability can be realized.

【００２１】さらに、この発明の第２の特徴は、ボンデ
ィング方法において、以下の工程を備えたことである。Furthermore, a second feature of the present invention is that the bonding method includes the following steps.

【００２２】（１）ワイヤガイドを通して供給されるボ
ンディングワイヤをボンディングツール先端のガイド溝
で押さえ込み、第１被ボンディング面にボンディングワ
イヤの一端側をボンディングする工程。(1) A step in which a bonding wire supplied through a wire guide is held down by a guide groove at the tip of a bonding tool, and one end of the bonding wire is bonded to the first surface to be bonded.

【００２３】（２）ボンディングワイヤの他端側を第２
被ボンディング面に電気的に接続した後、ボンディング
ワイヤの供給方向とは逆方向にワイヤカッタをスライド
させ、ボンディングワイヤの他端側を切断する工程。(2) Connect the other end of the bonding wire to the second
A step of cutting the other end of the bonding wire by sliding the wire cutter in a direction opposite to the bonding wire supply direction after electrically connecting to the bonding surface.

【００２４】このボンディング方法を実現するには、ボ
ンディング装置において、ボンディングワイヤを切断す
るワイヤカッタと、ボンディングワイヤの供給経路を横
切る方向にワイヤカッタをスライドさせるカッタスライ
ド機構と、カッタスライド機構を駆動するスライド機構
駆動源と、スライド機構駆動源の動作を制御する制御部
と、を備える。In order to realize this bonding method, in a bonding apparatus, a wire cutter for cutting a bonding wire, a cutter slide mechanism for sliding the wire cutter in a direction crossing a supply path of the bonding wire, and a slide mechanism for driving the cutter slide mechanism A drive source and a control unit that controls the operation of the slide mechanism drive source are provided.

【００２５】このようなボンディング方法においては、
ボンディングワイヤの供給方向とは逆方向にワイヤカッ
タをスライドさせるので、ボンディングワイヤの他端側
がボンディングツール先端のガイド溝から外れることな
く、しかも空中においてボンディングワイヤの他端側が
切断できる。従って、ボンディングワイヤの他端側を切
断した後、この切断されたボンディングワイヤの他端側
を一端側として再び他の第１被ボンディング面にボンデ
ィングが行えるので、連続ボンディングが実現できる。In such a bonding method,
Since the wire cutter is slid in the direction opposite to the supply direction of the bonding wire, the other end of the bonding wire does not come off the guide groove at the tip of the bonding tool, and the other end of the bonding wire can be cut in the air. Therefore, after the other end of the bonding wire is cut, the other end of the cut bonding wire is used as one end and bonding can be performed again to another first surface to be bonded, so that continuous bonding can be realized.

【００２６】[0026]

【発明の効果】本発明は、パッケージに形成された電極
の占有面積を縮小し、装置の小型化が実現できる半導体
装置を提供できる。According to the present invention, it is possible to provide a semiconductor device in which the area occupied by the electrodes formed on the package is reduced and the device can be downsized.

【００２７】さらに、本発明は、パッケージに形成され
た電極とボンディングワイヤとの間のボンディング不良
を防止し、電気的信頼性が向上できる半導体装置を提供
できる。Further, according to the present invention, it is possible to provide a semiconductor device capable of preventing a bonding failure between an electrode formed on a package and a bonding wire and improving electrical reliability.

【００２８】さらに、本発明は、上記半導体装置を製造
するためのボンディング方法を提供できる。Further, the present invention can provide a bonding method for manufacturing the above semiconductor device.

【００２９】さらに、本発明は、上記ボンディング方法
を実現するためのボンディング装置を提供できる。Further, the present invention can provide a bonding apparatus for realizing the above bonding method.

【００３０】[0030]

【発明の実施の形態】（第１の実施の形態） ＜半導体装置の構造＞以下、本発明の実施の形態につい
て説明する。図１は本発明の第１の実施の形態に係る半
導体装置の断面構造図、図２は半導体装置の要部斜視
図、図３は半導体装置の要部平面図である。図１に示す
ように、本実施の形態に係る半導体装置１は、半導体素
子２、パッケージ３、柱状電極４及びボンディングワイ
ヤ６を備える。DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) <Structure of Semiconductor Device> An embodiment of the present invention will be described below. FIG. 1 is a sectional structural view of a semiconductor device according to a first embodiment of the present invention, FIG. 2 is a perspective view of a main part of the semiconductor device, and FIG. 3 is a plan view of a main part of the semiconductor device. As shown in FIG. 1, a semiconductor device 1 according to the present embodiment includes a semiconductor element 2, a package 3, a columnar electrode 4, and a bonding wire 6.

【００３１】半導体素子２は、図１乃至図３に示すよう
に、平面方形状の単結晶珪素からなる半導体基板（半導
体チップ）２Ａで形成される。この半導体素子２にはパ
ワーMOS型トランジスタＴｒが形成される。詳細な構造
は図示しないが、パワーMOS型トランジスタＴｒはチャ
ネル形成領域、ゲート絶縁膜、ゲート電極、ソース領域
及びドレイン領域を備えて構築される。半導体基板２Ａ
にはｎ型が使用され、半導体基板２Ａの主面部に２重拡
散構造のｐ型半導体領域及びｎ型半導体領域が形成され
る。半導体基板２Ａはドレイン領域、ｐ型半導体領域は
チャネル形成領域、ｎ型半導体領域はソース領域として
使用される。チャネル形成領域となるｐ型半導体領域上
にはゲート絶縁膜を介してゲート電極が形成される。As shown in FIGS. 1 to 3, the semiconductor element 2 is formed by a semiconductor substrate (semiconductor chip) 2A made of single-crystal silicon having a square planar shape. A power MOS transistor Tr is formed in the semiconductor element 2. Although a detailed structure is not shown, the power MOS transistor Tr is constructed to include a channel forming region, a gate insulating film, a gate electrode, a source region, and a drain region. Semiconductor substrate 2A
Is used, and a p-type semiconductor region and an n-type semiconductor region having a double diffusion structure are formed on the main surface of the semiconductor substrate 2A. The semiconductor substrate 2A is used as a drain region, the p-type semiconductor region is used as a channel formation region, and the n-type semiconductor region is used as a source region. A gate electrode is formed over a p-type semiconductor region serving as a channel formation region via a gate insulating film.

【００３２】半導体素子２の表面上には複数の外部端子
２Ｂが配設される。複数の外部端子２Ｂのうち、大半の
外部端子２ＢはパワーMOS型トランジスタＴｒのソース
領域に電気的に接続される。つまり、これら大半の外部
端子２Ｂには同一電位が印加される（同一の動作電流が
流れる）。１つ又はいくつかの外部端子２ＢはパワーMO
S型トランジスタＴｒのゲート電極に電気的に接続され
る。外部端子２Ｂは詳細に断面構造を図示しないが、例
えばアルミニウム合金膜（半導体素子２の内部配線材
料）を主体として形成され、このアルミニウム合金膜の
表面にはボンダビリティを向上するめっき膜が形成され
る。めっき膜には金膜、ニッケル膜のいずれかが実用的
に使用できる。A plurality of external terminals 2B are provided on the surface of the semiconductor element 2. Most of the plurality of external terminals 2B are electrically connected to the source region of the power MOS transistor Tr. That is, the same potential is applied to most of these external terminals 2B (the same operating current flows). One or several external terminals 2B are power MO
It is electrically connected to the gate electrode of the S-type transistor Tr. The external terminal 2B is not shown in detail in cross section, but is mainly formed of, for example, an aluminum alloy film (internal wiring material of the semiconductor element 2), and a plating film for improving bondability is formed on the surface of the aluminum alloy film. You. Either a gold film or a nickel film can be practically used for the plating film.

【００３３】パッケージ３は凹形状のパッケージ本体３
１及びパッケージ蓋３２で構成される。パッケージ３は
パッケージ本体３１及びパッケージ蓋３２で形成される
内部空洞部に半導体素子２を搭載する。パッケージ本体
３１、パッケージ蓋３２はいずれも本実施の形態におい
て樹脂、例えばエポキシ系樹脂で形成される。The package 3 is a concave package body 3
1 and a package lid 32. The package 3 mounts the semiconductor element 2 in an internal cavity formed by the package body 31 and the package lid 32. In this embodiment, both the package body 31 and the package lid 32 are formed of a resin, for example, an epoxy resin.

【００３４】パッケージ本体３１の内部底面にはドレイ
ン電極３Ａ、ソース電極３Ｂのそれぞれが形成される。
ドレイン電極３Ａは図１中左側に配設され、このドレイ
ン電極３Ａ上に半導体素子２が取り付けられる。半導体
素子２とドレイン電極３Ａとの間は例えば導電性接着
剤、詳細には金属粒子が混在する熱若しくは紫外線硬化
型樹脂接着剤、又は金属針が埋設された熱若しくは紫外
線硬化型樹脂接着剤で固着される。また、半導体素子２
とドレイン電極３Ａとの間は金−珪素合金、銀ペスト、
半田のいずれかで取り付けることができる。半導体素子
２の半導体基板２ＡはパワーMOS型トランジスタＴｒの
ドレイン領域を形成するので、このドレイン領域とドレ
イン電極３Ａとの間は電気的に接続される。ドレイン電
極３Ａはパッケージ３の外部まで引き出されており、こ
の引き出された部分は外部リード配線として使用され
る。A drain electrode 3A and a source electrode 3B are formed on the inner bottom surface of the package body 31.
The drain electrode 3A is provided on the left side in FIG. 1, and the semiconductor element 2 is mounted on the drain electrode 3A. Between the semiconductor element 2 and the drain electrode 3A, for example, a conductive adhesive, specifically, a heat or ultraviolet curing resin adhesive in which metal particles are mixed, or a heat or ultraviolet curing resin adhesive in which metal needles are embedded. It is fixed. In addition, the semiconductor element 2
Gold-silicon alloy, silver plague,
It can be attached with any of solder. Since the semiconductor substrate 2A of the semiconductor element 2 forms the drain region of the power MOS transistor Tr, the drain region and the drain electrode 3A are electrically connected. The drain electrode 3A is extended to the outside of the package 3, and the extended portion is used as an external lead wiring.

【００３５】ソース電極３Ｂはドレイン電極３Ａに近接
した位置（半導体素子２の外周囲）においてパッケージ
本体３Ｂの内部底面に形成される。同様に、ソース電極
３Ｂはパッケージ３の外部まで引き出されており、この
引き出された部分は外部リード配線として使用される。
このソース電極３Ｂ上には柱状電極４が配設される。The source electrode 3B is formed on the inner bottom surface of the package body 3B at a position close to the drain electrode 3A (outer periphery of the semiconductor element 2). Similarly, the source electrode 3B is extended to the outside of the package 3, and the extended portion is used as an external lead wiring.
The columnar electrode 4 is provided on the source electrode 3B.

【００３６】ドレイン電極３Ａ、ソース電極３Ｂは板状
の電極材料、具体的には表面にニッケルめっき膜が形成
された銅板で形成される。銅板は比較的抵抗値が小さい
ので動作電流経路として優れている。めっき膜は、銅の
酸化を防止でき、又ボンダビリティを向上できる。ま
た、ドレイン電極３Ａ、ソース電極３Ｂには板状のアル
ミニウム又はアルミニウム合金が実用的に使用できる。The drain electrode 3A and the source electrode 3B are formed of a plate-shaped electrode material, specifically, a copper plate having a nickel plating film formed on the surface. Since the copper plate has a relatively small resistance value, it is excellent as an operating current path. The plating film can prevent oxidation of copper and can improve bondability. Further, plate-like aluminum or an aluminum alloy can be practically used for the drain electrode 3A and the source electrode 3B.

【００３７】柱状電極４は、ソース電極３Ｂ上に配設さ
れ、半導体素子２の複数の外部端子２Ｂに対して１本
（１組）の割合で設けられる。この割合に限定されない
が、本実施の形態においては、９個の外部端子２Ｂに対
して１本の割合で設けられ、合計２本の柱状電極４が配
設される。The columnar electrode 4 is provided on the source electrode 3B, and is provided at a ratio of one (one set) to the plurality of external terminals 2B of the semiconductor element 2. Although not limited to this ratio, in the present embodiment, one column electrode 4 is provided for nine external terminals 2 </ b> B at a ratio of nine.

【００３８】柱状電極４はメイン柱状電極４Ａと、この
メイン柱状電極４Ａの近傍に並列的に配設されたサブ柱
状電極４Ｂと、を備え構築される。メイン柱状電極４
Ａ、サブ柱状電極４Ｂは本実施の形態においていずれも
円柱形状で形成される。柱状電極４は、複数本のボンデ
ィングワイヤ６と電気的な接続を確保しつつ、複数本の
ボンディングワイヤ６を高さ方向に積み重ねる機能を有
する。メイン柱状電極４Ａは、複数本のボンディングワ
イヤ６と電気的に接続し、電流容量を充分に確保するた
めに、サブ柱状電極４Ｂに比べて平面サイズを大きく設
定してある。サブ柱状電極４Ｂは、複数本のボンディン
グワイヤ６と電気的な接続を確保しつつ、さらに複数本
のボンディングワイヤ６を挟持し高さ方向に積み重ねる
機能を有する。ボンディングワイヤ６の積み重ねの概念
には、ボンディングワイヤ６を１列で高さ方向に積み重
ねること、複数本のボンディングワイヤ６を複数列で高
さ方向に積み重ねること、複数本のボンディングワイヤ
６を１つに束ねること、がいずれも含まれる。The columnar electrode 4 is constructed by including a main columnar electrode 4A and a sub columnar electrode 4B arranged in parallel near the main columnar electrode 4A. Main columnar electrode 4
A, the sub columnar electrode 4B is formed in a columnar shape in this embodiment. The columnar electrode 4 has a function of stacking the plurality of bonding wires 6 in the height direction while ensuring electrical connection with the plurality of bonding wires 6. The main columnar electrode 4A is electrically connected to the plurality of bonding wires 6, and is set to have a larger planar size than the sub columnar electrode 4B in order to ensure sufficient current capacity. The sub columnar electrode 4B has a function of sandwiching the plurality of bonding wires 6 and stacking them in the height direction while securing electrical connection with the plurality of bonding wires 6. The concept of stacking the bonding wires 6 includes stacking the bonding wires 6 in one row in the height direction, stacking a plurality of bonding wires 6 in the height direction in a plurality of rows, and connecting one bonding wire 6 to one row. Bundling together.

【００３９】メイン柱状電極４Ａ、サブ柱状電極４Ｂは
いずれも本実施の形態において抵抗値が小さく電気電導
性が良好で、しかも機械的強度に優れた銅で形成され
る。表面の酸化を防止するために、銅の表面にはニッケ
ルめっき膜を形成することが好ましい。また、メイン柱
状電極４Ａ、サブ柱状電極４Ｂには他にアルミニウム若
しくはアルミニウム合金が使用できる。In the present embodiment, both the main columnar electrode 4A and the sub columnar electrode 4B are formed of copper which has a small resistance value, good electric conductivity, and excellent mechanical strength. In order to prevent surface oxidation, it is preferable to form a nickel plating film on the copper surface. In addition, aluminum or an aluminum alloy can be used for the main columnar electrode 4A and the sub columnar electrode 4B.

【００４０】メイン柱状電極４Ａ、サブ柱状電極４Ｂは
それぞれ導電性接着剤、詳細には前述した金属粒子を混
在する熱又は紫外線硬化型樹脂接着剤でソース電極３Ｂ
に固着される。また、固着には導電性を有する半田（例
えば、Ｓｎ−Ｐｂ半田）が使用できる。また、固着はね
じ止めで行っても良い。ねじ止めは、メイン柱状電極４
Ａ、サブ柱状電極４Ｂのそれぞれの底面に雄ねじを形成
し、ソース電極３Ｂ、又ソース電極３Ｂ及びパッケージ
本体３１に雌ねじを形成し、雄ねじを雌ねじにねじ込む
ことにより行う。また、ねじ止めは、メイン柱状電極４
Ａ、サブ柱状電極４Ｂのそれぞれの底面に雌ねじを形成
し、ソース電極３Ｂ及びパッケージ本体３１に貫通孔を
形成し、バッケージ本体３１の底面から貫通孔を通して
雄ねじをねじ込むことにより行う。Each of the main columnar electrode 4A and the sub columnar electrode 4B is made of a conductive adhesive, more specifically, a source electrode 3B made of a heat or ultraviolet curable resin adhesive mixed with the above-mentioned metal particles.
To be fixed. In addition, a conductive solder (for example, Sn-Pb solder) can be used for the fixing. Further, the fixing may be performed by screwing. Screw the main columnar electrode 4
A, a male screw is formed on the bottom surface of each of the sub columnar electrodes 4B, and a female screw is formed on the source electrode 3B, the source electrode 3B and the package body 31, and the male screw is screwed into the female screw. Also, screwing is performed on the main columnar electrode 4
A, a female screw is formed on the bottom surface of each of the sub columnar electrodes 4B, a through hole is formed in the source electrode 3B and the package body 31, and a male screw is screwed through the through hole from the bottom surface of the package body 31.

【００４１】なお、メイン柱状電極４Ａ、サブ柱状電極
４Ｂは、いずれも円柱形状に限定されず、角柱形状、多
角柱形状、テーパ形状、又は円錐形状で形成してもよ
い。The main columnar electrode 4A and the sub columnar electrode 4B are not limited to the columnar shape, but may be formed in the shape of a prism, a polygon, a taper, or a cone.

【００４２】図１乃至図３に示すように、ボンディング
ワイヤ６の一端側は、半導体素子２の外部端子２Ｂにボ
ンディングされ、この外部端子２Ｂに電気的かつ機械的
に接続される。ボンディングワイヤ６の他端側は、柱状
電極４に電気的かつ機械的に接続される。ボンディング
ワイヤ６の一端側は、後述するボンディング装置により
ファーストボンディングとして、超音波振動を併用し、
又は超音波振動及び熱圧着を併用しボンディングされ
る。ボンディングワイヤ６の他端側は、同様にボンディ
ング装置によりセカンドボンディングとして、メイン柱
状電極４Ａとサブ柱状電極４Ｂとの間に挟み込まれ、こ
の挟持力のみで電気的かつ機械的な接続を行う。セカン
ドボンディングは、基本的に超音波振動の併用、熱圧着
の併用がいずれも行われない。メイン柱状電極４Ａとサ
ブ柱状電極４Ｂとの間には複数本のボンディングワイヤ
６の他端側が高さ方向に積み重ねられる。ボンディング
ワイヤ６は本実施の形態においてアルミニウムワイヤを
使用する。また、銅ワイヤ、金ワイヤのそれぞれが実用
的に使用できる。As shown in FIGS. 1 to 3, one end of the bonding wire 6 is bonded to an external terminal 2B of the semiconductor element 2, and is electrically and mechanically connected to the external terminal 2B. The other end of the bonding wire 6 is electrically and mechanically connected to the columnar electrode 4. One end side of the bonding wire 6 is used as a first bonding by a bonding apparatus to be described later, using ultrasonic vibration together,
Alternatively, bonding is performed using both ultrasonic vibration and thermocompression bonding. Similarly, the other end of the bonding wire 6 is sandwiched between the main columnar electrode 4A and the sub columnar electrode 4B as second bonding by a bonding device, and an electrical and mechanical connection is made only by this clamping force. In the second bonding, basically, neither the combined use of the ultrasonic vibration nor the combined use of the thermocompression bonding is performed. The other ends of the plurality of bonding wires 6 are stacked in the height direction between the main columnar electrode 4A and the sub columnar electrode 4B. In this embodiment, an aluminum wire is used as the bonding wire 6. Moreover, each of a copper wire and a gold wire can be used practically.

【００４３】＜ボンディング装置のシステム構成＞次
に、前述の半導体装置１の製造に使用するボンディング
装置のシステム構成について説明する。図４はボンディ
ング装置のシステム構成図、図５はボンディング装置の
要部（ボンディングツール部分）の拡大図、図６はボン
ディングワイヤの切断状態を示すボンディング装置のシ
ステム構成図である。図４及び図５に示すように、ボン
ディング装置はボンディングヘッド１０にボンディング
ツール１１が装着され、このボンディングツール１１に
近接してワイヤガイド１２及びワイヤカッタ１３が配設
される。<System Configuration of Bonding Apparatus> Next, a system configuration of a bonding apparatus used for manufacturing the semiconductor device 1 will be described. FIG. 4 is a system configuration diagram of the bonding device, FIG. 5 is an enlarged view of a main part (bonding tool portion) of the bonding device, and FIG. 6 is a system configuration diagram of the bonding device showing a cutting state of a bonding wire. As shown in FIGS. 4 and 5, in the bonding apparatus, a bonding tool 11 is mounted on a bonding head 10, and a wire guide 12 and a wire cutter 13 are provided near the bonding tool 11.

【００４４】ワイヤガイド１２はボンディングワイヤ６
を外部端子２Ｂの表面（第１被ボンディング面）、柱状
電極４（第２被ボンディング面）のそれぞれに供給す
る。ボンディングツール１１は、ワイヤガイド１２から
供給されたボンディングワイヤ６を先端の逆Ｖ字型ガイ
ド溝１１Ｖで押さえ込み、被ボンディング面（外部端子
２Ｂの表面）にボンディングワイヤ６をボンディングす
る。図示しないが、ボンディングツール１１は超音波発
振器に連結されており、この超音波発振器はボンディン
グツール１１に超音波振動を与える。また、ボンディン
グツール１１は加熱源に連結されており、この加熱源は
ボンディングツール１１を加熱する。The wire guide 12 is a bonding wire 6
To the surface of the external terminal 2B (first bonded surface) and the columnar electrode 4 (second bonded surface). The bonding tool 11 holds down the bonding wire 6 supplied from the wire guide 12 with the inverted V-shaped guide groove 11V at the tip, and bonds the bonding wire 6 to the surface to be bonded (the surface of the external terminal 2B). Although not shown, the bonding tool 11 is connected to an ultrasonic oscillator, and the ultrasonic oscillator applies ultrasonic vibration to the bonding tool 11. Further, the bonding tool 11 is connected to a heating source, and the heating source heats the bonding tool 11.

【００４５】ワイヤカッタ１３はカッタ部１３Ａ及びシ
ャフト部１３Ｂを備える。カッタ部１３Ａは、図４乃至
図６に示すように、ワイヤガイド１２によるボンディン
グワイヤ６の供給経路を横切る方向にスライドし、ボン
ディングワイヤ６を切断する。カッタ部１３Ａは、ボン
ディングワイヤ６の切断時、ボンディングワイヤ６の供
給方向（図中、上側から下側に向かう方向）とは逆の方
向（図中、下側から上側に向かう方向）にスライドす
る。すなわち、カッタ部１３Ａは、ボンディングツール
１１の先端部のガイド溝１１Ｖにボンディングワイヤ６
を押さえ込むようにスライドし、ガイド溝１１Ｖからボ
ンディングワイヤ６を外すことなくボンディングワイヤ
６を切断できる。つまり、空中においてボンディングワ
イヤ６は切断できる。The wire cutter 13 has a cutter portion 13A and a shaft portion 13B. As shown in FIGS. 4 to 6, the cutter unit 13A slides in a direction crossing the supply path of the bonding wire 6 by the wire guide 12, and cuts the bonding wire 6. When the bonding wire 6 is cut, the cutter portion 13A slides in a direction (a direction from the lower side to the upper side in the figure) opposite to a supply direction of the bonding wire 6 (a direction from the upper side to the lower side in the figure). . That is, the cutter 13A is provided with the bonding wire 6 in the guide groove 11V at the tip of the bonding tool 11.
And the bonding wire 6 can be cut without removing the bonding wire 6 from the guide groove 11V. That is, the bonding wire 6 can be cut in the air.

【００４６】このカッタ部１３Ａのスライド動作は、カ
ッタスライド機構１４、スライド機構駆動源１５及び制
御部１６により行われる。カッタスライド機構１４は、
ボンディングヘッド１０に配設され、周縁にワイヤカッ
タ１３のシャフト部１３Ｂが連接された偏芯カム１４Ａ
と、シャフト部１３Ｂの移動方向（カッタ部１３Ａのス
ライド方向）を制限するシャフトガイド部１４Ｂと、を
備える。The sliding operation of the cutter unit 13A is performed by a cutter slide mechanism 14, a slide mechanism drive source 15, and a control unit 16. The cutter slide mechanism 14
An eccentric cam 14A disposed on the bonding head 10 and having a shaft portion 13B of the wire cutter 13 connected to the periphery thereof.
And a shaft guide portion 14B for restricting a moving direction of the shaft portion 13B (a sliding direction of the cutter portion 13A).

【００４７】スライド機構駆動源１５は好ましくはステ
ッピングモータで構築される。このステッピングモータ
の回転駆動軸は偏芯カム１４Ａに連結され、ステッピン
グモータは偏芯カム１４Ａを回転させる。偏芯カム１４
Ａの回転によりシャフト部１３Ｂを介してカッタ部１３
Ａがスライドし、このカッタ部１３Ａのスライド方向は
シャフトガイド部１４Ｂにより制限される（ガイドされ
る）。The slide mechanism drive source 15 is preferably constructed by a stepping motor. The rotation drive shaft of this stepping motor is connected to the eccentric cam 14A, and the stepping motor rotates the eccentric cam 14A. Eccentric cam 14
The cutter unit 13 is rotated by the rotation of the shaft A through the shaft unit 13B.
A slides, and the sliding direction of the cutter 13A is restricted (guided) by the shaft guide 14B.

【００４８】スライド機構駆動源１５は制御部１６に連
結され、制御部１６はボンディング動作を制御するとと
もに、スライド機構駆動源１５の動作を制御する。ボン
ディング動作の制御には、ボンディングヘッド１０の水
平方向（Ｘ方向及びＹ方向）の移動、垂直方向（Ｚ方
向）の移動、回転及びこれらの停止の各動作の制御が含
まれる。The slide mechanism drive source 15 is connected to a control unit 16, and the control unit 16 controls the bonding operation and the operation of the slide mechanism drive source 15. The control of the bonding operation includes the control of the movement of the bonding head 10 in the horizontal direction (X direction and Y direction), the movement in the vertical direction (Z direction), rotation, and stop of these operations.

【００４９】＜ボンディング方法＞次に、前述のボンデ
ィング装置を使用したボンディング方法について説明す
る。図７乃至図９はボンディング方法を説明するボンデ
ィング工程図である。<Bonding Method> Next, a bonding method using the above-described bonding apparatus will be described. 7 to 9 are bonding process diagrams for explaining a bonding method.

【００５０】（１）まず、前述の図１に示すように、パ
ッケージ３のドレイン電極３Ａ上に半導体素子２を搭載
する。そして、図４乃至図６に示すボンディング装置に
より、半導体素子２の外部端子２Ｂにボンディングワイ
ヤ６の一端側をボンディングする（ファーストボンディ
ング）。ボンディングワイヤ６はボンディング装置のワ
イヤガイド１２から供給され、この供給されたボンディ
ングワイヤ６はボンディングツール１１の先端部のガイ
ド溝１１Ｖで押さえ込まれた状態でボンディングされ
る。ボンディングにおいては、超音波振動が、又は超音
波振動及び熱圧着が併用される。(1) First, as shown in FIG. 1, the semiconductor element 2 is mounted on the drain electrode 3A of the package 3. Then, one end of the bonding wire 6 is bonded to the external terminal 2B of the semiconductor element 2 by the bonding apparatus shown in FIGS. 4 to 6 (first bonding). The bonding wire 6 is supplied from a wire guide 12 of the bonding apparatus. The supplied bonding wire 6 is bonded while being held down by the guide groove 11V at the tip of the bonding tool 11. In bonding, ultrasonic vibration, or ultrasonic vibration and thermocompression bonding are used together.

【００５１】（２）ボンディングヘッド１０の移動によ
り、ボンディングワイヤ６はワイヤガイド１２から引き
出され、このボンディングワイヤ６の他端側は図７に示
すように柱状電極４のメイン柱状電極４Ａとサブ柱状電
極４Ｂとの間を通過する。(2) The bonding wire 6 is pulled out from the wire guide 12 by the movement of the bonding head 10, and the other end of the bonding wire 6 is connected to the main columnar electrode 4A of the columnar electrode 4 and the sub columnar electrode as shown in FIG. It passes between the electrodes 4B.

【００５２】（３）ボンディングヘッド１０の回転（ほ
ぼ１８０度の反転）とともに、図８に示すようにボンデ
ィングワイヤ６はサブ柱状電極４Ｂを折り返す。このボ
ンディングワイヤ６の折り返しの時点で、ボンディング
ワイヤ６の他端側は、メイン柱状電極４Ａ（又はサブ柱
状電極４Ｂ）に電気的に接続され（セカンドボンディン
グ）、メイン柱状電極４Ａとサブ柱状電極４Ｂとの間に
挟持されて機械的に接続される。(3) With the rotation of the bonding head 10 (almost 180 degrees inversion), the bonding wire 6 turns the sub columnar electrode 4B back as shown in FIG. At the time of the folding of the bonding wire 6, the other end of the bonding wire 6 is electrically connected to the main columnar electrode 4A (or the sub columnar electrode 4B) (second bonding), and the main columnar electrode 4A and the sub columnar electrode 4B are connected. And is mechanically connected.

【００５３】（４）この後、制御部１６からスライド機
構駆動源１５にカッタスライド機構１４の駆動開始指令
が送信される。これにより、前述の図４乃至図６に示す
ワイヤカッタ１３がスライドし、図９に示すようにボン
ディングワイヤ６が切断される。(4) After that, the control section 16 sends a drive start command for the cutter slide mechanism 14 to the slide mechanism drive source 15. Thereby, the wire cutter 13 shown in FIGS. 4 to 6 slides, and the bonding wire 6 is cut as shown in FIG.

【００５４】（５）引き続き、同様にボンディングが繰
り返し行われ、複数本のボンディングワイヤ６の他端側
は柱状電極４に電気的に接続されるとともに高さ方向に
積み重ねられる。(5) Subsequently, bonding is repeated in the same manner, and the other ends of the plurality of bonding wires 6 are electrically connected to the columnar electrodes 4 and stacked in the height direction.

【００５５】以上説明したように、本実施の形態に係る
半導体装置１においては、ボンディングワイヤ６の他端
側（セカンドボンディング側）が１カ所に束ねられ、し
かも高さ方向に積み重ねた状態で柱状電極４に電気的に
接続される。従って、複数本のボンディングワイヤ６の
他端側のボンディング領域の占有面積が縮小でき、しか
も占有面積が高さ方向に稼げる（高さ方向に空いている
空間を利用できる）ので、半導体装置１の小型化が実現
できる。さらに、ボンディングワイヤ６は柱状電極４に
挟み込まれるので、接続不良が防止でき、電気的信頼性
が高い半導体装置１が実現できる。As described above, in the semiconductor device 1 according to the present embodiment, the other end side (second bonding side) of the bonding wire 6 is bundled at one place, and furthermore, the bonding wire 6 is stacked in the height direction in a columnar shape. It is electrically connected to the electrode 4. Therefore, the occupied area of the bonding region on the other end side of the plurality of bonding wires 6 can be reduced, and the occupied area can be increased in the height direction (a space vacant in the height direction can be used). Miniaturization can be realized. Furthermore, since the bonding wire 6 is sandwiched between the columnar electrodes 4, connection failure can be prevented, and the semiconductor device 1 with high electrical reliability can be realized.

【００５６】さらに、本実施の形態に係るボンディング
方法においては、ボンディングワイヤ６の供給方向とは
逆方向にワイヤカッタ１３のカッタ部１３Ａをスライド
させるので、ボンディングワイヤ６の他端側がボンディ
ングツール１１の先端のガイド溝１１Ｖから外れること
なく、しかも空中においてボンディングワイヤ６の他端
側が切断できる。従って、ボンディングワイヤ６の他端
側を切断した後、この切断されたボンディングワイヤ６
の他端側を一端側として再び他の外部端子２Ｂにボンデ
ィングが行えるので、連続ボンディングが実現できる。Further, in the bonding method according to the present embodiment, since the cutter portion 13A of the wire cutter 13 is slid in the direction opposite to the supply direction of the bonding wire 6, the other end of the bonding wire 6 is connected to the tip of the bonding tool 11. The other end of the bonding wire 6 can be cut in the air without coming off the guide groove 11V. Therefore, after cutting the other end of the bonding wire 6, the cut bonding wire 6
Can be bonded to another external terminal 2B again with the other end of the terminal as one end, so that continuous bonding can be realized.

【００５７】（第２の実施の形態）本実施の形態は、前
述の半導体装置１において、ボンディングワイヤ６と柱
状電極４との電気的かつ機械的な接続の信頼性を向上し
た場合を説明する。(Second Embodiment) This embodiment describes a case where the reliability of the electrical and mechanical connection between the bonding wire 6 and the columnar electrode 4 is improved in the semiconductor device 1 described above. .

【００５８】図１０は本発明の第２の実施の形態に係る
半導体装置の断面構造図である。図１０に示すように、
本実施の形態に係る半導体装置１は、ボンディングワイ
ヤ６の他端側と柱状電極４との接続部分にボンディング
ワイヤ６を被覆するワイヤ固定用接着剤７が形成され
る。ワイヤ固定用接着剤７はボンディングワイヤ６の他
端側において電気的な接続を確実に行い、かつ機械的に
接続強度を高める。ワイヤ固定用接着剤７には前述した
導電性接着剤、半田のいずれかが実用的に使用できる。
また、ワイヤ固定用接着剤７は絶縁性の熱又は紫外線硬
化型樹脂利接着剤を使用してもよい。ワイヤ固定用接着
剤７は、ボンディングワイヤ６の他端側の切断後に塗布
され、硬化される。FIG. 10 is a sectional structural view of a semiconductor device according to the second embodiment of the present invention. As shown in FIG.
In the semiconductor device 1 according to the present embodiment, a wire fixing adhesive 7 that covers the bonding wire 6 is formed at a connection portion between the other end of the bonding wire 6 and the columnar electrode 4. The wire fixing adhesive 7 reliably establishes electrical connection at the other end of the bonding wire 6 and mechanically increases the connection strength. Any of the above-described conductive adhesives and solders can be practically used as the wire fixing adhesive 7.
Further, as the wire fixing adhesive 7, an insulating heat or ultraviolet curable resin adhesive may be used. The wire fixing adhesive 7 is applied and cured after cutting the other end of the bonding wire 6.

【００５９】本実施の形態に係る半導体装置１において
は、前述の第１の実施の形態に係る半導体装置１で得ら
れる効果に加えて、ボンディングワイヤ６の他端側と柱
状電極４との間の電気的な接続並びに機械的な接続がよ
り確実に行える、効果が得られる。In the semiconductor device 1 according to the present embodiment, in addition to the effects obtained by the semiconductor device 1 according to the above-described first embodiment, the distance between the other end of the bonding wire 6 and the columnar electrode 4 is increased. The electrical connection and the mechanical connection can be more reliably performed.

【００６０】（第３の実施の形態）本実施の形態は、前
述の第１の実施の形態に係る半導体装置１において、ボ
ンディングワイヤ６と柱状電極４との電気的かつ機械的
な接続の信頼性を向上した場合を説明する。(Third Embodiment) In the present embodiment, the reliability of the electrical and mechanical connection between the bonding wire 6 and the columnar electrode 4 in the semiconductor device 1 according to the first embodiment is described. The case where the performance is improved will be described.

【００６１】図１１は本発明の第３の実施の形態に係る
半導体装置の断面構造図である。図１１に示すように、
本実施の形態に係る半導体装置１は、ボンディングワイ
ヤ６の他端側が柱状電極４に巻き付けられる。ボンディ
ングワイヤ６の巻き付けはボンディングヘッド１０の移
動軌跡を調節するだけで容易に実施できる。この巻き付
けによりボンディングワイヤ６の他端側において電気的
な接続が確実に行われ、かつ機械的な接続強度が高めら
れる。FIG. 11 is a sectional structural view of a semiconductor device according to the third embodiment of the present invention. As shown in FIG.
In the semiconductor device 1 according to the present embodiment, the other end of the bonding wire 6 is wound around the columnar electrode 4. The winding of the bonding wire 6 can be easily performed only by adjusting the movement locus of the bonding head 10. By this winding, electrical connection is reliably performed on the other end side of the bonding wire 6 and mechanical connection strength is increased.

【００６２】本実施の形態に係る半導体装置１において
は、前述の第１の実施の形態に係る半導体装置１で得ら
れる効果に加えて、ボンディングワイヤ６の他端側と柱
状電極４との間の電気的な接続並びに機械的な接続がよ
り確実に行える、効果が得られる。In the semiconductor device 1 according to the present embodiment, in addition to the effects obtained by the semiconductor device 1 according to the first embodiment, the distance between the other end of the bonding wire 6 and the columnar electrode 4 is increased. The electrical connection and the mechanical connection can be more reliably performed.

【００６３】なお、本発明は前述の実施の形態に限定さ
れない。例えば、本発明は、半導体装置１にバイポーラ
型トランジスタを形成した半導体素子２を搭載してもよ
い。The present invention is not limited to the above embodiment. For example, in the present invention, the semiconductor device 1 may be provided with a semiconductor element 2 having a bipolar transistor.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１の実施の形態に係る半導体装置の
断面構造図である。FIG. 1 is a sectional structural view of a semiconductor device according to a first embodiment of the present invention.

【図２】第１の実施の形態に係る半導体装置の要部斜視
図である。FIG. 2 is a perspective view of a main part of the semiconductor device according to the first embodiment;

【図３】第１の実施の形態に係る半導体装置の要部平面
図である。FIG. 3 is a plan view of a principal part of the semiconductor device according to the first embodiment;

【図４】第１の実施の形態に係るボンディング装置のシ
ステム構成図である。FIG. 4 is a system configuration diagram of the bonding apparatus according to the first embodiment.

【図５】第１の実施の形態に係るボンディング装置の要
部の拡大図である。FIG. 5 is an enlarged view of a main part of the bonding apparatus according to the first embodiment.

【図６】第１の実施の形態に係るボンディングワイヤの
切断状態を示すボンディング装置のシステム構成図であ
る。FIG. 6 is a system configuration diagram of a bonding apparatus showing a cutting state of a bonding wire according to the first embodiment.

【図７】第１の実施の形態に係るボンディング方法を説
明する第１ボンディング工程図である。FIG. 7 is a first bonding step diagram for explaining the bonding method according to the first embodiment;

【図８】第１の実施の形態に係る第２ボンディング工程
図である。FIG. 8 is a second bonding step diagram according to the first embodiment;

【図９】第１の実施の形態に係る第３ボンディング工程
図である。FIG. 9 is a third bonding step diagram according to the first embodiment;

【図１０】本発明の第２の実施の形態に係る半導体装置
の断面構造図である。FIG. 10 is a sectional structural view of a semiconductor device according to a second embodiment of the present invention.

【図１１】本発明の第３の実施の形態に係る半導体装置
の断面構造図である。FIG. 11 is a sectional structural view of a semiconductor device according to a third embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１ 半導体装置 ２ 半導体素子 ２Ｂ 外部端子 ３ パッケージ ４ 柱状電極 ４Ａ メイン柱状電極 ４Ｂ サブ柱状電極 ６ ボンディングワイヤ ７ ワイヤ固定用接着剤 １０ ボンディングヘッド １１ ボンディングツール １１Ｖ ガイド溝 １２ ワイヤガイド １３ ワイヤカッタ １３Ａ カッタ部 １３Ｂ シャフト部 １４ カッタスライド機構 １４Ａ 偏芯カム １４Ｂ シャフトガイド部 １５ スライド機構駆動源 １６ 制御部 DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Semiconductor element 2B External terminal 3 Package 4 Columnar electrode 4A Main columnar electrode 4B Sub columnar electrode 6 Bonding wire 7 Wire fixing adhesive 10 Bonding head 11 Bonding tool 11V Guide groove 12 Wire guide 13 Wire cutter 13A Cutter portion 13B Shaft Unit 14 Cutter slide mechanism 14A Eccentric cam 14B Shaft guide unit 15 Slide mechanism drive source 16 Control unit

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 同一電位が印加される複数の外部端子を
有する半導体素子と、 前記半導体素子を搭載するパッケージと、 前記半導体素子の外周囲において前記パッケージに形成
され、複数本のボンディングワイヤと電気的な接続を確
保しつつ、複数のボンディングワイヤを高さ方向に積み
重ねる柱状電極と、 前記半導体素子の複数の外部端子に一端側がそれぞれボ
ンディングされ、前記柱状電極に他端側がそれぞれ電気
的に接続されるとともに高さ方向に積み重ねられた複数
本のボンディングワイヤと、 を備えたことを特徴とする半導体装置。A semiconductor element having a plurality of external terminals to which the same potential is applied; a package mounting the semiconductor element; and a plurality of bonding wires formed on the package around the semiconductor element. A columnar electrode in which a plurality of bonding wires are stacked in the height direction while ensuring a proper connection, one end of each of the columnar electrodes is bonded to a plurality of external terminals of the semiconductor element, and the other end is electrically connected to the columnar electrode, respectively. And a plurality of bonding wires stacked in the height direction. 【請求項２】 ワイヤガイドを通して供給されるボンデ
ィングワイヤをボンディングツール先端のガイド溝で押
さえ込み、第１被ボンディング面にボンディングワイヤ
の一端側をボンディングする工程と、 ボンディングワイヤの他端側を第２被ボンディング面に
電気的に接続した後、ボンディングワイヤの供給方向と
は逆方向にワイヤカッタをスライドさせ、ボンディング
ワイヤの他端側を切断する工程と、 を備えたことを特徴とするボンディング方法。2. A step of pressing a bonding wire supplied through a wire guide by a guide groove at a tip end of a bonding tool to bond one end of the bonding wire to a first bonding surface, and a second coating of the other end of the bonding wire to a second bonding surface. A step of sliding a wire cutter in a direction opposite to a bonding wire supply direction after electrically connecting to a bonding surface to cut the other end of the bonding wire.
JP11246098A 1998-04-22 1998-04-22 Semiconductor device and bonding method used for its manufacture Pending JPH11307568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11246098A JPH11307568A (en) 1998-04-22 1998-04-22 Semiconductor device and bonding method used for its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11246098A JPH11307568A (en) 1998-04-22 1998-04-22 Semiconductor device and bonding method used for its manufacture

Publications (1)

Publication Number Publication Date
JPH11307568A true JPH11307568A (en) 1999-11-05

Family

ID=14587198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11246098A Pending JPH11307568A (en) 1998-04-22 1998-04-22 Semiconductor device and bonding method used for its manufacture

Country Status (1)

Country Link
JP (1) JPH11307568A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1096796A2 (en) 1999-10-28 2001-05-02 Fujitsu Limited Cable system and the center system and subscriber terminal device for use in the cable system
DE10324069A1 (en) * 2003-05-27 2004-12-23 Infineon Technologies Ag Circuit to conductively bond contact spots on a semiconductor chip to mounting connections has a straight and a bent bond wire connection

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1096796A2 (en) 1999-10-28 2001-05-02 Fujitsu Limited Cable system and the center system and subscriber terminal device for use in the cable system
DE10324069A1 (en) * 2003-05-27 2004-12-23 Infineon Technologies Ag Circuit to conductively bond contact spots on a semiconductor chip to mounting connections has a straight and a bent bond wire connection
DE10324069B4 (en) * 2003-05-27 2005-06-23 Infineon Technologies Ag Circuit arrangement and method for the conductive connection of contact pads in semiconductor chips

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