JPH11288879A - Exposure conditions detecting method and device thereof, and manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize exposure conditions determining method and a device, where the collection and arrangement of data and the arrangement of pictures are carried out easily, quickly, and accurately without requiring much time for aiding a quick determination of an optimal condition in an optimal exposure conditions determining operation. SOLUTION: Dimensions and decisions, and images obtained from a microscope device 4, such as a length measuring SEM or the like through a condition finding operation, are collected via a network 6, data on a measuring point, a focus, an exposure amount, dimensions, a pattern decision are linked with images and stored in a data base 9 of a server 8, optimal conditions are automatically determined by the server 8, the data are retrieved and processed with an office PC 11 such as a personal computer installed at an office, and dimensions, a pattern decision, an image, a dimensional characteristics graph, and optimal conditions are made to be displayed on the screen of the office PC 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing technique using an exposure apparatus, and more particularly to a focus setting for an exposure apparatus when starting a product and a condition setting for determining an optimum condition of an exposure amount.

[0002]

2. Description of the Related Art In a photolithography process in semiconductor manufacturing, the optimum conditions of focus and exposure when printing a pattern with an exposure apparatus are set by changing the focus and exposure for each exposure unit (shot). Make a wafer with a printed pattern, measure the dimensions of the pattern at a plurality of arbitrary points on the wafer with a microscope, observe the resolution of the pattern (the degree of completion), and focus on the optimal pattern. It is determined by a condition setting operation for finding the exposure amount.

Conventionally, this operation has been performed by a skilled engineer such as a specialized engineer, and data such as measured dimensions, determination of the degree of pattern formation (resolution), measurement locations, and the like are recorded on paper. Then, take a picture with a video printer, and later manually input and organize the data into a personal computer at an office or the like, create a dimensional characteristic graph, arrange the photos on paper and paste them, and watch the pattern change In consideration of various factors, optimal conditions for focus and exposure are determined.

FIG. 9 shows an example of a sheet on which measurement data is recorded. This recording paper, before performing the condition setting work, fill in the range of shots present on the wafer used for condition setting,
The focus and exposure to be set are written in the corresponding columns and rows. With this recording paper, the pattern of an arbitrary point in the shot is measured by the microscope device, and the dimensional value and pattern judgment are recorded by hand at the measured point in the square of the position of the corresponding shot. .
In the margin, the measured coordinates in the shot are also recorded. At this time, the plurality of points to be measured and observed are at the same place in any shot.

When a photograph is taken, information such as focus and exposure is recorded on the photograph so that the photograph can be seen later. In addition, at this time, they are collecting photos while thinking about how to organize the photos.

[0006]

In the conventional method as described above, collection and organization of data and photographs are very troublesome and time-consuming. In collection, it is particularly time-consuming to record on photographs, and in organizing, it is a difficult task to put the data recorded on the recording paper into a personal computer in the office and paste the collected photos side by side on paper. It takes time.

[0007] This operation depends on the amount of data to be collected,
The larger the number of photos, the more time it takes and the slower it is to determine the optimal conditions. For example, when launching a new exposure tool or developing / prototyping a new product,
If it is necessary to observe the conditions carefully and observe the conditions, as many points as possible are observed, and data and photographs are collected.

On the other hand, when it is not necessary to determine the pattern closely, for example, when in a hurry or when the conditions once determined are reviewed several days later, at a certain point, only the pattern is determined without measuring the dimensions. The work time is shortened because no data is acquired or data and photos are collected by thinning out.
However, there is also a possibility that the judgment is wrong, such as what is judged as a normal pattern is actually a bad pattern, and it is not possible to confirm the authenticity only by recording the pattern judgment, and based on the wrong data I may decide the conditions.

In addition, there are various cases of condition setting, and the work time for data / photograph collection and organization is different. Also, when the recording paper is reviewed later, even the person who worked may not understand the contents of the recording.

Further, in the above-described conventional method, since the determination is made depending on the subjectivity and experience of an operator such as an engineer, the determined conditions may deviate from the truly optimum conditions. In addition, since the criteria for determining the optimum conditions differ from engineer to engineer, a shift occurs between the engineers.

[0011] In addition, it takes much time and effort to organize the data. This operation requires more time as the amount of data to be collected is larger, and it takes longer to determine the optimum conditions. For example, when launching a new exposure tool or developing a new product
If it is necessary to observe conditions carefully, such as during prototype production, it is necessary to observe as many points as possible and collect data, so not only does it take time to collect data, but it also takes time to organize. Cost.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method for assisting the determination of exposure conditions, in which a large amount of data / photographs can be easily collected and the data / photographs can be organized in a short time regardless of the amount. An object of the present invention is to provide a device using the same.

Another object of the present invention is to provide an exposure apparatus that arranges data in a short time without being influenced by the amount of collected data, and that accurately determines exposure conditions without depending on the subjectivity and experience of a worker such as an engineer. It is to provide a condition determination technique.

Another object of the present invention is to provide a semiconductor device manufacturing technique capable of improving the throughput of the entire process including the preparation work such as condition setting in the semiconductor device manufacturing process.

Another object of the present invention is to provide a semiconductor device manufacturing technique capable of improving the yield in the exposure process by objectively and accurately determining the exposure conditions in the exposure process. Is to provide.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0017]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

[0018] The above-mentioned object is to measure the dimensions measured with a microscope device,
Pass / fail judgment of the observed pattern, and online the information of the image and the wafer information such as the type, process, and exposure conditions via a network, and link the size, determination, image, and the type, process, and exposure conditions to the server. The information stored in a storage medium such as a server is read out by a personal computer installed at a manufacturing site, office, etc., the information is processed, and the images are arranged and displayed on a screen. And displaying the dimensional characteristic graph. As a result, the work of collecting photos is reduced, and the work of organizing data such as dimensions and organizing photos is not required.

According to the present invention, as an exposure condition determination support method, a first step of performing an exposure process on a plurality of unit exposure regions under different exposure conditions, and a transfer process performed on each unit exposure region by the exposure process are performed. Performing a second step of observing and evaluating a pattern and recording the result as an evaluation result; and a third step of determining an optimum range of exposure conditions based on the evaluation result in each of the plurality of unit exposure areas. It is.

According to the present invention, there is provided an exposure condition determination assisting apparatus for assisting a condition setting operation for determining an optimum range of exposure conditions in an exposure apparatus, the evaluation result of a transfer pattern obtained by exposure processing under a plurality of different exposure conditions. And means for automatically determining the optimum range of the exposure condition based on the evaluation result in each of the plurality of unit exposure areas.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method and an apparatus for determining an exposure condition in an exposure step in a manufacturing process of a semiconductor device according to the present invention will be described below in detail with reference to the drawings.

(Embodiment 1) FIG.
An outline of a method and an apparatus for supporting determination of an optimum exposure condition will be described. This apparatus includes an exposure apparatus 1 for printing a pattern on a wafer, a microscope apparatus 4 such as a length measuring SEM (scanning electron microscope) for measuring dimensions, a server 8 for collecting measurement results and images, and a database 9 for storing the information. , Measurement results and images are retrieved from the database 9 for display and printing. First, the exposure apparatus 1 changes the focus and the exposure amount for each shot 3 of the wafer 2 to change the exposure pattern (circle 6 in the example in the figure).
8) Bake. Next, a microscope device 4 such as a length measuring SEM
The user observes the microscope image 6 projected on the screen 5 to measure the size of an arbitrary exposure pattern (circle 68 in the example in the figure), observes the state of the pattern, inputs the judgment, and inputs the image and the image. The measurement information 7 such as the location, dimensions, and judgment of the information is stored. At the same time, wafer information such as type, process, focus, and exposure amount is also stored. The microscope device 4 is provided with a determination input unit and an image storage unit for this purpose. Then, the stored image, measurement information, and wafer information are transferred to the server 8 via the network 69 and stored in the database 9. The database 9 stores images, measurement information, and exposure conditions in a linked manner.

The manufacturing site PC 10 and the office PC 1
In step 1, the measurement result and the image stored in the database 9 are searched, and the image list 12 is displayed or the focus dependency 1 is displayed, as in the case where the photograph is pasted on paper manually.
3. A graph of the exposure dependency 14 is displayed. Further, printing of the image list 12, the focus dependency 13, and the exposure dependency 14 is also enabled. As a result, the measurement results and images can be arranged without trouble. In addition, if the manufacturing site PC 10 is installed near the microscope device 4, it is possible to confirm a measurement result and a change in a pattern on the spot immediately after finishing the operation with the microscope device 4.

FIG. 2 shows a screen in which images and dimensions / judgments according to an embodiment of the present invention are displayed side by side on a series of shots on a wafer. Information 15 such as exposure and exposure device
Are displayed on the screen according to the direction in which the focus value 16 and the exposure amount 17 are respectively changed. Then, the corresponding image 18, dimension value 19, and pattern determination 20 are displayed on the matrix of the focus value 16 and the exposure amount 17. In FIG. 2, a matrix of three vertical shots and five horizontal shots is displayed, but an arbitrary arrangement may be made within a displayable range. Here, consider a case where the image 18 of all conditions, the dimension value 19, and the pattern judgment 20 cannot be displayed on the screen.
A scroll button is provided, and by clicking this button with a mouse, all images 18, dimension values 19, and pattern judgments 20 can be viewed. Clicking the left one data scroll button 21 scrolls one data left, and the left one page scroll button 22
By clicking, the image 18, the dimension value 19, and the pattern judgment 20 are displayed by scrolling one page to the left.
Similarly, right 1 data scroll button 23, right 1 page scroll button 24, upper 1 data scroll button 25, upper 1 page scroll button 26, lower 1 data scroll button 27, lower 1 page scroll button 2
Scroll each with 8. In addition, measurement point No.
Is displayed so that the user can know where the currently displayed list is measured. Here, similarly to the scroll of the screen, the image 18 to be displayed, the dimension value 1
9. The display can be switched by changing the measurement point of the pattern judgment 20.

Further, since only one image can be displayed at a time in one shot, if a plurality of images are taken at the same place, they cannot be displayed simultaneously. Therefore, when the part of the image 18 is clicked with the mouse, the image is sequentially turned. For example, this is a case where an image is retaken or a case where a magnification is changed.

By this display, it is possible to see how the pattern is formed, so that it is possible to see at a glance where to set the exposure conditions.

When the print button 31 is clicked,
This screen can be printed by a printer as it is. Also, any additional information can be input into the comment input field 32.

The microscope image 6 obtained by the microscope device 4
If the pattern judgment 7a is incorrect, the pattern judgment 7a can be changed on this screen.

FIG. 3 shows a screen in which images and dimensions / judgments according to an embodiment of the present invention are displayed side by side at measurement points with respect to focus. Similar to the screen shown in FIG.
Index information 15 indicating what condition data / image is set is displayed, focus values 16 are arranged in the vertical direction, and measurement points 33 are arranged in the horizontal direction to form a matrix. Then, the image 18 corresponding to the focus value 16 and the matrix of the measurement points 33, the dimension value 19, and the pattern judgment 20 are displayed.

In FIG. 3, the display is performed in a matrix of three points vertically and five points horizontally, but may be arranged arbitrarily within a displayable range. Also in this screen, as in the screen shown in FIG. 2, in consideration of a case where all the images 18 and the dimension values 19 and the pattern judgment 20 cannot be displayed on the screen, a scroll button is arranged, and this button is clicked with a mouse. , All images 18, dimension values 19, pattern judgment 2
Make 0 visible.

By displaying the exposure amount, it is possible to know how many exposure amounts are presently displayed in the list. Here, as in the case of scrolling the screen, the lower exposure amount change button 34 and the upper exposure amount change button 35 are used to change the exposure amount of the displayed list and to switch the display. With this display,
At a glance, it can be seen at a glance whether the patterns of all the measurement points are correctly formed.

FIG. 4 shows a screen in which an image and dimensions / judgment according to an embodiment of the present invention are displayed side by side at measurement points with respect to the amount of exposure. As in the screens shown in FIGS. Index information 15 indicating what condition data / image is set is displayed, exposure amounts 17 are arranged in the vertical direction, and measurement points 33 are arranged in the horizontal direction to form a matrix. Then, an image 18 corresponding to the exposure amount 17 and the matrix of the measurement points 33, a dimension value 19, and a pattern determination 20
Is displayed. In FIG. 4, the image is displayed in a matrix of three vertical focus points and five horizontal points, but may be arbitrarily arranged within a displayable range.

In this screen, as in the screens shown in FIGS. 2 and 3, it is assumed that all the images 18, dimensions 19, and pattern judgments 20 cannot be displayed on the screen, and a scroll button is arranged. By clicking with the mouse, all images 18, dimension values 19, pattern judgment 2
Make 0 visible. In addition, by displaying the focus value, the number of the currently displayed list can be known. Here, as in the case of scrolling the screen, the focus of the list to be displayed can be changed and the display can be switched using the lower focus change button 36 and the upper focus change button 37.
With this display, it is possible to see at a glance which exposure amount should be used to correctly form the patterns at all the measurement points.

FIG. 5 shows a screen on which an image according to an embodiment of the present invention is enlarged and displayed. The details of the pattern which cannot be clearly seen in the image list shown in FIGS. Makes it clearly visible. This screen is displayed when the image 18 to be enlarged and displayed is selected on the screens shown in FIGS. The means for selecting the image 18 includes, for example, means for double-clicking the left mouse button. Alternatively, an image file name may be designated from the image file name input field 40. Here, the result once determined can be changed by clicking the determination field 41 with a mouse. As a result, when the result of the determination is incorrect, it can be corrected. In some cases, the microscope apparatus does not perform the determination, but only the dimensions and images are collected, and the determination can be performed by a personal computer.

By clicking the save button 42 with a mouse, the image and the accompanying information 39 are saved on a hard disk or the like of a personal computer. Using the stored image and the supplementary information 39, the operator can create any material. This image can be used for other materials. Printing can also be performed by clicking the print button 43 with a mouse.

FIG. 6 shows a screen in which images are displayed side by side in accordance with measurement points in a shot. When a certain shot, that is, an exposure condition is selected, the upper left, the middle upper, the upper right, and the left of the shot are selected. Images taken in the middle, middle middle, right middle, lower left, middle lower, lower right are shot upper left image 44, shot middle upper image 45, shot upper right image 46,
At the positions of the shot middle left image 47, the shot middle image 48, the shot middle right image 49, the shot lower left image 50, the shot middle lower image 51, and the shot lower right image 52, the coordinates 53 in the shot of each measurement point are imaged. Display below. This is a display for observing the performance of the lens of the exposure apparatus 1 and, depending on the exposure conditions, how the pattern is formed differently between the center and the end of the shot. This display is effective for finding exposure conditions under which a normal pattern is formed in the entire area within a shot. Also, related incidental information 54
Is also output to the screen. Printing can also be performed by clicking the print button 55 with a mouse.

FIG. 7 shows a certain measurement point (measurement pattern).
The graph shows the focus dependency at
Dimension standard value 61, standard value lower limit 62, standard value upper limit 63,
A focus lower limit value 64 and a focus upper limit value 65 at which a normal pattern can be formed are added. With this graph,
The change in the dimensions becomes apparent at a glance, and it can be easily compared with the standard value of the measured pattern to determine the optimum focus and the range within which it is appropriate.

FIG. 8 shows a certain measurement point (measurement pattern).
In the graph, a standard value 61, a standard lower limit 62, a standard upper limit 63, an exposure lower limit 66 for forming a normal pattern, and an exposure upper limit 67 are added to the graph. . This graph makes it easy to see the dimensional change at a glance and compares it with the standard value of the measured pattern.
It is easy to determine the optimal exposure amount and the range of the optimal exposure amount.

(Embodiment 2) FIG. 10 is a functional block diagram showing an example of the configuration of an exposure condition determining apparatus for performing an exposure condition determining method according to another embodiment of the present invention. 12, 13, 14 and 15 are conceptual diagrams illustrating an example of the operation, and FIG. 16 is a flowchart illustrating an example of the operation.

The exposure condition determination apparatus according to the present embodiment measures a dimension of a wafer pattern and measures and observes resolution, and measures and observes data storing dimension data and quality data of resolution. 102, a condition calculating means 103 for calculating an optimum condition, and a condition displaying means 104 for displaying the calculated condition.

Note that the hardware configuration of the present embodiment can use the respective configurations exemplified in the above-described first embodiment. Therefore, the corresponding components of the first embodiment are denoted by the corresponding reference numerals as necessary. To quote.

That is, these means can use the configuration exemplified in the first embodiment in the following correspondence.

For example, the measuring / observing means 101 determines the length S
This can be realized using a microscope device 4 such as an EM.
The measurement / observation data storage unit 102 can be realized using the database 9. The condition calculation means 103 can be realized as software mounted on the server 8. The condition display means 104 can be realized using the manufacturing site PC 10 and the office PC 11.

First, a wafer obtained by printing a pattern by changing the focus and the exposure amount for each exposure unit (shot 3 of the wafer 2) using the exposure apparatus 1 is used to measure the dimensions of an arbitrary pattern by the measurement / observation means 101, and Observe the resolution to determine pass / fail. And the information measured and determined here is
It is stored in the measurement / observation data storage unit 102. At this time, if the resolution is good or bad, o is stored, and x is stored if it is not. Then, the condition calculating unit 103 reads out the stored measurement / observation data and performs a calculation process. Then, the calculated exposure condition is displayed on the condition display means 104.

FIG. 11 shows an example of recording of measurement / observation data obtained by the measurement / observation means 101. A square surrounded by one solid line represents an exposure unit 105 (shot), nine different focus conditions of 0 # to 8 # are set in the horizontal axis direction, and nine focus conditions of 0 # to 8 # are set in the vertical axis direction. Different types of exposure conditions are set. The steps of the focus condition and the exposure amount condition depend on the resist used, but as an example, the focus condition is, for example, 0.
1 μm to 0.2 μm increments, exposure condition is 200 to 400 J
/ M ² increments.

Small squares separated by dotted lines in the individual exposure units 105 indicate columns for recording data of the respective patterns. This column is, from the upper left, a column 106 for the pattern P1, a column 107 for the pattern P2,
Column 108, pattern P4 column 109, pattern P5
Column 110 and pattern P6 column 111.

For example, the pattern P1 is a hole pattern, the pattern P2 is a line and space parallel to the X-Y direction of the wafer stage of the exposure apparatus 1, and the pattern P3 is a pattern P3.
Represents a line & space parallel to the Y direction with the pattern P4
Represents transfer patterns of oblique lines and spaces and the observation results thereof.

In this example, one exposure unit 105 contains 6
Although it is possible to record up to different types of patterns, more or less patterns may be measured and observed. These collected data are stored in the measurement / observation data storage unit 102 in association with the focus and the exposure amount.

FIG. 12 shows a method for calculating the optimum exposure condition. Focus and exposure amount are set on the axis of the two-dimensional coordinate system, and the range in which the dimensions and resolution are good for each of the patterns P1 to P6 is described in the coordinate system. At this time, the boundary point is a condition in which the dimension and the judgment are the outermost conditions of 、, the point is drawn with respect to the axis of focus and the amount of exposure, and the range is described by an approximate circle surrounding the point. When this range is described for each of the measured and observed patterns P1 to P6, the ranges common to all the patterns P1 to P6, that is, the ranges where the dimensions and resolution of each of the patterns P1 to P6 are good overlap. A common dimension / resolution good range 117 exists, the common range is a suitable exposure condition, and the center is the optimum condition 11.
8

FIG. 12 shows an example of the data shown in FIG. 11. For example, in the case of the pattern P4, when the focus condition is 4 # and the exposure amount condition is 0 #, it is x, so that it is out of the range. When the focus condition is 4 # and the exposure amount condition is 1 #, it is ○, so the boundary of the range is obtained. When the focus condition is 4 #, and the exposure amount condition is 2 #, it is 範 囲, so it is within the range. In this way, when ranges are described for all the patterns P1 to P6 (in the case of the present embodiment, the pattern P6 is not measured), a good size / resolution range 112 of the pattern P1 and a good size / resolution range 113 of the pattern P2 are respectively provided. , A good size / resolution range 114 of the pattern P3, a good size / resolution range 115 of the pattern P4, and a good size / resolution range 116 of the pattern P5. It can be seen that the common size / resolution good range 117 has a focus condition in the range of 3 # to 5 # and an exposure amount condition in the range of 3 # to 5 #.

Therefore, the condition calculating means 103 derives the formulas in the range for each pattern determined by the above procedure, and solves those equations, whereby the optimum conditions can be calculated. More specifically, as an example, the common dimension / resolution good range 117 based on the concept illustrated in FIG. Possible exposure conditions can be automatically determined.

That is, in the case of the present embodiment, the information of the observation result illustrated in FIG. 11 is recorded in a measurement result file 200 in a format illustrated in FIG. It is stored in the database 9 as the means 102.

The measurement result file 200 includes a shot ID field 201, a pattern ID field 20
2. A judgment result field 203 is provided. In the case of the present embodiment, each shot ID field 201 is a product of 9 types of exposure condition and focus condition.
One (0 # to 80 #) is provided, and for each of them,
Number of pattern IDs corresponding to the six patterns P1 to P6
A field 202 is provided, and a determination result field 203 is provided for each of them. In the judgment result field 203, the judgment results of the patterns P1 to P6 are recorded as "good" = 1, "improper" = 0, and in the case of unmeasured or unrecorded, other identifiable special data is recorded. .

Further, in order to process the judgment result of each shot and each pattern P1 to P6 in the shot, FIG.
The determination result bitmaps 301 to 306 corresponding to the patterns P1 to P6 as illustrated in FIG. 15 and the comprehensive determination result bitmap 300 as illustrated in FIG. 15 for recording the final determination result are used. I do. These bitmaps are stored in, for example, the server 8
Is set as needed in the main memory.

Hereinafter, an example of the operation of the condition calculation means 103 will be described with reference to the flowchart of FIG. First, the shot index Z is initialized to 0 # (step 40).
1) After that, the data with the shot ID of Z # is read from the measurement result file 200 (step 402).

Then, the determination result of each of the patterns P1 to P6 in the shot of the Z # is written into a bit position corresponding to each shot in the corresponding determination result bitmaps 301 to 306 (step 403). More specifically, the current shot index Z is divided by 9, the axial position y of the exposure condition is obtained as the quotient, and the axial position x of the focus condition is obtained as the remainder. In the bit positions (x, y) of .about.306, the determination result of each of the patterns P1 to P6 in the exposure unit 105 specified by the current shot index Z is "good" = 1, "not good".
= 0. In the case of the present embodiment, special data other than 0/1 is recorded for an unmeasured or unrecorded pattern, and this data is excluded from the determination processing.

The processing of steps 402 to 403 is repeated for all the exposure units 105 stored in the measurement result file 200 (step 404,
Step 405).

After that, the patterns P1 to P1
Based on the determination data set in the determination result bitmaps 301 to 306 corresponding to P6, a process of finally automatically determining the optimal range of the exposure condition is performed.

That is, first, the position x in the axial direction of the focus condition and the position y in the axial direction of the exposure amount condition are initialized to 0 # (step 406), and then the determination result bit map corresponding to each of the patterns P1 to P6 (X,
The bits of the determination result of the shot position of y) are read, and a determination operation such as a logical product is performed, and the result is set as the (x, y) bit of the comprehensive determination result bitmap 300 (step 407). .

The determination operation in step 407 is not limited to taking the logical product of the bits of the measurement results of the patterns P1 to P6, but the logical sum (that is, the pattern P1).
If at least one of the measurement results of P6 to P6 is good, the exposure condition of the shot is considered to be acceptable), or, for example, a case where the number of bits 1 exceeds a predetermined threshold is finally determined to be good. You can also. Further, each bit is multiplied by a different weighting factor for each pattern (that is, the evaluation weight is different for each of the patterns P1 to P6) to obtain a total, and the exposure condition of the shot in which this total exceeds a predetermined threshold is determined. Can be determined to be good.

This processing is repeated from 0 # to 8 # in the x direction (steps 408 and 409). When one column in the x direction is completed, x is initialized to 0 # and the y direction is incremented. (Step 410) 0 # in y direction
Repeat until # 8 (step 411).

As a result, the overall judgment result bit map 3
00 is set to 1 for each of the exposure units 105 when all of the measured patterns P1 to P6 are good, and is set to 0 otherwise. This is because a plurality of patterns P1 to P1 under a certain exposure condition
If all of the measured values of P6 are good (good overlap), it means that the exposure condition of the exposure unit 105 is determined to be good.

By scanning the distribution range in which the bit is 1 in the x and y directions in the overall determination result bitmap 300 obtained as described above, the optimal range of each of the focus condition and the exposure amount condition is determined. I get it.

In the case of the present embodiment, as illustrated in FIG. 15, the focus condition of the common size / resolution range 117 is determined to be 3 # to 5 #, and the exposure amount condition is as follows.
It is determined from 3 # to 5 #, and the optimum condition 118 at the center is determined.
Is determined that the focus condition is 4 # and the exposure amount condition is 4 #. Then, the comprehensive judgment result bitmap 300
Is output to the display of the condition display means 104 such as the manufacturing site PC 10 or the office PC 11 and is presented to the operator, and the operator sets the obtained optimal condition 118 to the exposure condition such as the focus and the exposure amount. Then, the exposure apparatus 1 is set to start the exposure processing of the semiconductor wafer in the actual semiconductor device manufacturing process.

As described above, according to the exposure condition determining method and apparatus of this embodiment, the database 9 obtained from the measuring / observing means 101 of the microscope apparatus 4 such as a length measuring SEM is used.
And the like as software on the server 8 based on a large number of evaluation results of a plurality of patterns P1 to P6 in a plurality of exposure units 105 having different exposure conditions stored in the measurement / observation data storage unit 102 as the measurement result file 200. The mounted condition calculation means 103 automatically determines the optimal exposure condition range, and presents the result to the worker via the condition display means 104 such as the manufacturing site PC 10 or the office PC 11. It is possible to determine the range of optimal exposure conditions depending on the experience of a specific worker,
Accurate judgment results can be quickly obtained without subjectivity of the operator.

As a result, in the manufacturing process of the semiconductor device, the time required for preparation work such as setting conditions in the exposure step is greatly reduced, and the throughput of the exposure step including the preparation work is improved. Further, by setting the exposure conditions accurately, the yield in the exposure process in the manufacturing process of the semiconductor device is also improved.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments and can be variously modified without departing from the gist thereof. Needless to say, there is.

[0068]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

According to the present invention, it is possible to easily collect a large amount of data / photographs and to organize the data / photographs in a short time without being influenced by the amount of data / photographs. Can be provided.

According to the present invention, data can be arranged in a short time without being influenced by the amount of collected data, and the exposure conditions can be accurately determined without depending on the subjectivity and experience of a worker such as an engineer. Can be obtained.

Further, according to the present invention, in the manufacturing process of the semiconductor device, there is obtained an effect that the throughput of the whole process including the preparation work such as condition setting can be improved.

Further, according to the present invention, it is possible to improve the yield in the exposure process by objectively and accurately determining the exposure conditions in the exposure process in the semiconductor device manufacturing process. .

[Brief description of the drawings]

FIG. 1 is an explanatory diagram showing an outline of an exposure condition determination support method and a system configuration therefor according to an embodiment of the present invention;

FIG. 2 is a view showing a display screen of a sequence of images and dimensions / judgment of shots on a wafer.

FIG. 3 is a diagram showing a display screen in which images and dimensions / judgments are arranged at measurement points with respect to focus.

FIG. 4 is a diagram showing a display screen in which images and dimensions / judgments are arranged at measurement points with respect to an exposure amount.

FIG. 5 is a diagram showing a display screen on which an image is enlarged and displayed.

FIG. 6 is a diagram showing a display screen on which images are arranged in accordance with measurement points in a shot.

FIG. 7 is a diagram showing focus dependence at a certain measurement point.

FIG. 8 is a diagram showing the exposure amount dependency at a certain measurement point.

FIG. 9 is a diagram illustrating an example of a sheet for recording dimensions, determinations, and the like in the related art.

FIG. 10 is a functional block diagram illustrating an example of a configuration of an exposure condition determining apparatus that performs an exposure condition determining method according to another embodiment of the present invention.

FIG. 11 is a conceptual diagram illustrating an example of the operation.

FIG. 12 is a conceptual diagram illustrating an example of the operation.

FIG. 13 is a conceptual diagram illustrating an example of the operation.

FIG. 14 is a conceptual diagram illustrating an example of the operation.

FIG. 15 is a conceptual diagram illustrating an example of the operation.

FIG. 16 is a flowchart illustrating an example of the operation.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Exposure apparatus 2 Wafer 3 Shot 4 Microscope apparatus 5 Screen 6 Microscope image 7 Measurement information 7a Pattern judgment 8 Server 9 Database 10 Manufacturing site PC 11 Office PC 12 Image list 13 Focus dependency 14 Exposure amount dependency 15 Index information 16 Focus Value 17 Exposure amount 18 Image 19 Dimension value 20 Pattern judgment 21 Left 1 data scroll button 22 Left 1 page scroll button 23 Right 1 data scroll button 24 Right 1 page scroll button 25 Up 1 data scroll button 26 Up 1 page scroll button 27 Down 1 data scroll button 28 bottom 1 page scroll button 29 measurement point down change button 30 measurement point up change button 31 print button 32 comment input field 33 measurement point 34 Lower light intensity change button 35 Upper exposure change button 36 Lower focus change button 37 Upper focus change button 38 Enlarged image 39 Additional information 40 Image file name input field 41 Judgment field 42 Save button 43 Print button 44 Upper left shot image 45 Upper middle shot image 46 Upper right image of shot 47 Middle left image of shot 48 Middle image of shot 49 Middle right image of shot 50 Lower left image of shot 51 Lower middle image of shot 52 Lower right image of shot 53 Coordinate 54 Additional information 55 Print button 61 Standard value 62 Standard value lower limit 63 Standard Value upper limit 64 Focus lower limit 65 Focus upper limit 66 Exposure lower limit 67 Exposure upper limit 68 Exposure pattern (for example, circle) 69 Network 101 Measurement / observation means 102 Measurement / observation data storage means 103 Calculation means 104 Condition display means 105 Exposure unit 106 column 107 column 108 column 109 column 110 column 111 column 112 Dimension / resolution good range for each pattern 113 Dimension / good resolution range for each pattern 114 Dimension / good resolution range for each pattern 115 Dimension for each pattern Good resolution range 116 Size for each pattern Good resolution range 117 Common dimensions and good resolution range 118 Optimal conditions 200 Measurement result file 201 Shot ID field 202 Pattern ID field 203 Judgment result field 300 Overall judgment result bitmap 301 to 306 Judgment result bitmap P1 to P6 pattern

Claims (14)

[Claims] In a condition setting operation for determining an optimum exposure condition of a focus and an exposure amount in an exposure apparatus, condition setting data such as a dimension value, a pattern determination, and an image acquired by a microscope apparatus are collected online, and the data is collected. An exposure condition determination support method characterized by displaying the acquired conditions side by side. 2. A function of collecting condition setting data such as a dimension value, a pattern judgment, and an image from a microscope apparatus online, a function of storing and managing the condition setting data,
An exposure condition determination support device having a function of searching for condition setting data and displaying the data in a line with the acquired condition. 3. In a condition setting operation for determining an optimum exposure condition of focus and exposure amount in an exposure apparatus, a microscope image and a dimension value / pattern determination are made on a screen of a personal computer or the like by associating focus with exposure amount. An exposure condition determination assisting method, which assists in condition determination by displaying the images side by side. 4. In a condition setting operation for determining an optimum exposure condition of a focus and an exposure amount in an exposure apparatus, a microscope image and a dimension value / pattern determination are made on a screen of a personal computer or the like by associating a focus with a measurement point. An exposure condition determination assisting method, which assists in condition determination by displaying the images side by side. 5. In a condition setting operation for determining an optimum exposure condition of focus and exposure amount in an exposure apparatus, a microscope image, a dimension value / pattern determination is performed by associating an exposure amount with a measurement point and a screen of a personal computer or the like. An exposure condition determination assisting method characterized by assisting condition determination by displaying the information side by side. 6. In a condition setting operation for determining an optimum exposure condition of a focus and an exposure amount in an exposure apparatus, a focus dependence graph and an exposure amount dependence graph of dimensions are displayed on a screen of a personal computer or the like.
An exposure condition determination support method characterized by supporting condition determination. 7. An exposure condition determination assisting apparatus using the method according to claim 1, 3, 4, 5, or 6. 8. A microscope device having the function according to claim 3. 9. A first step of performing an exposure process on a plurality of unit exposure regions under different exposure conditions; and observing and evaluating a transfer pattern obtained in each of the unit exposure regions in the exposure process. A second step of recording as a result; and a third step of determining an optimum range of the exposure condition based on the evaluation result in each of the plurality of unit exposure regions. How to help. 10. The exposure condition determination support method according to claim 9, wherein, in the first step, each of the unit exposure areas is divided into a plurality of pattern areas, and a different pattern is set for each of the pattern areas. Exposing, and in the second step, the transfer pattern is evaluated for each of the pattern areas in each of the unit exposure areas and recorded as the evaluation result. 11. The exposure condition determination support method according to claim 9, wherein, in the third step, the exposure is performed based on the evaluation result of the transfer pattern for each of the pattern areas corresponding to a plurality of the unit exposure areas. Determining an optimum range of the condition, and further determining an area of the exposure condition where the optimum range obtained for each of the pattern areas overlaps as a final optimum range of the exposure condition. How to help. 12. An exposure condition determination assisting apparatus for assisting a condition setting operation for determining an optimum range of exposure conditions in an exposure apparatus, wherein an evaluation result of a transfer pattern obtained by exposure processing under a plurality of different exposure conditions is evaluated. An exposure condition determination assisting apparatus, comprising: means for recording; and means for automatically determining an optimum range of the exposure condition based on the evaluation result in each of a plurality of unit exposure areas. 13. The exposure condition determination support device according to claim 12, wherein in each of the exposure processes under a plurality of different exposure conditions, a plurality of different transfer patterns are exposed collectively, and each of the transfer patterns is Wherein the evaluation result is recorded, and an area of the exposure condition where the optimal range obtained for each transfer pattern overlaps is determined as the final optimal range of the exposure condition. Support equipment. 14. A method of manufacturing a semiconductor device, wherein a semiconductor device is formed on a semiconductor wafer by transferring a pattern to the semiconductor wafer by photolithography, wherein: 14. A semiconductor device, wherein an optimum exposure condition in the photolithography is determined by using the exposure condition determination support method according to any one of claims 1, 10, and 11 or the exposure condition determination support device according to any one of claims 2, 7, 12, and 13. Manufacturing method.