JPH11233571A - Semiconductor device, underfill material, and thermosetting film material - Google Patents

Abstract

PROBLEM TO BE SOLVED: To remove a silicon chip without damage at a low temperature and small shearing force while maintaining a high temperature cycle reliability by specifying a shearing bond strength of a silicon chip and a circuit board. SOLUTION: A solder bump electrode 2 of a silicon chip 1 is positioned to a land of a circuit board 3 and is subjected to solder connection by IR reflow. Thereafter, a clearance between an electronic part and the circuit board 3 is filled with thermosetting resin composition 4 prepared by a specific method and is set, and a semiconductor device is produced. That is, in the semiconductor device, shearing bond strength of the silicon chip 1 and the circuit board 3 is set at 5 MPa or more at 25 deg.C and at 1 MPa or less at 250 deg.C. Straight chain aliphatic hydrocarbon compound of 10C-30C or less which is chemically bound to thermosetting resin is added to the thermosetting resin composition 4 which sticks the silicon chip 1 to the circuit board 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface mount semiconductor device,
It belongs to the technical field of modules and repair methods, and underfill materials.

[0002]

2. Description of the Related Art Japanese Patent Application Laid-Open No. 61-269318 discloses a method for repairing an electronic component fixed on a circuit board by a resin.
And Japanese Patent Application Laid-Open No. 6-5664. Also, Rep
airbility of underfill encapsulated Flip−Chip pac
kages IEEE, 524-528, 1995.

[0003]

SUMMARY OF THE INVENTION However, Japanese Patent Application Laid-Open No. 61-26
The method using a thermoplastic resin as disclosed in Japanese Patent No. 9318 is excellent in repair, but has a problem in that the temperature cycle reliability after reflow is poor. Further, a repair method of removing a silicon chip by thermal degradation using a mere thermosetting resin as disclosed in Japanese Patent Application Laid-Open No. 6-5664 requires a high temperature and a high shearing force in a chip removing step, and a large silicon chip is required. When used, the chip is broken by shearing force, and when a resin circuit board is used, the circuit board is deteriorated or deformed at high temperatures, which is not effective.

SUMMARY OF THE INVENTION Accordingly, the present invention has been made in view of the above-mentioned conventional problems, and has as its object to provide a high temperature cycle reliability, a low temperature, a small shear force, and a silicon chip or circuit board. An object of the present invention is to provide a semiconductor device from which a silicon chip can be removed without being damaged.

[0005]

The object of the present invention is achieved by the following means.

In a semiconductor device in which the active surface of the silicon chip is directed toward the circuit board and electrically connected to the circuit board via a conductive material, the gap between the silicon chip and the circuit board is filled with a thermosetting resin composition and cured. The chip and the circuit board have a shear adhesive strength of 5 Mpa or more at 25 ° C. and 1 at 250 ° C.
Mpa or less can be attained by a semiconductor device characterized by being below Mpa.

If the shear strength between the silicon chip and the circuit board at 25 ° C. is 5 Mpa or more, the silicon chip and the circuit board are sufficiently bonded when the semiconductor device is used, so that high reliability can be maintained. Further, when it becomes necessary to remove the silicon chip due to the occurrence of a defect or the like, the shear adhesive strength between the silicon chip and the circuit board is 1 at 250 ° C.
If it is not more than Mpa, the silicon chip can be removed without being damaged by heating to 250 ° C. and applying a shearing force. In addition, if the heating is performed at 250 ° C. for 10 minutes or less, even if an organic circuit substrate is used, deterioration and deformation of the substrate are small, and the substrate can be sufficiently reused.

As described above, the shear adhesive strength between the silicon chip and the circuit board is 5 Mpa or more at 25 ° C. and 1 M at 250 ° C.
In a semiconductor device having a pa or less, a linear aliphatic hydrocarbon compound having 10 to 30 carbon atoms chemically bonded to a thermosetting resin is added to a thermosetting resin composition bonding a silicon chip and a circuit board. It can be achieved by containing.

[0009]

Embedded image —R ₁ R ₁ = C _n H _{2n + 1} (Formula 10) 10 ≦ n ≦ 30 (n is a positive number)

[0010]

Embedded image —R ₁ —O—R ₂ —R ₁ = C _n H _{2n + 1} R ₂ = C _m H _{2m + 1} (Formula 11) 10 ≦ n + m ≦ 30 (n and m are positive numbers)

[0011]

Embedded image

The reason why the object can be achieved as described above is as follows.
A linear aliphatic hydrocarbon compound having 10 to 30 carbon atoms chemically bonded to a thermosetting resin (Chemical Formula 10), (Chemical Formula 1)
1) and (Chem. 12) show that the cured product of the thermosetting resin composition is Tg.
When the glass is at a lower temperature, the shear bond strength of the cured product is hardly reduced. On the other hand, when the cured product of the thermosetting resin composition is in a rubber state having a temperature higher than Tg, the shear bond strength of the cured product is significantly reduced. It is to make it.

The reason is that, in the glass state of the cured product having a strong cohesive force, the motion of the linear aliphatic hydrocarbon is restricted by the cohesive force of the cured product and does not significantly affect the adhesive strength of the entire cured product. On the other hand, in the rubber state in which the cohesive force of the cured product is reduced, it is considered that the linear aliphatic hydrocarbon moves violently and greatly reduces the adhesive strength of the entire cured product.

When the number of carbon atoms of the linear aliphatic hydrocarbon compound is less than 10, there is almost no effect of lowering the adhesive force in a rubber state, and when the number of carbon atoms is more than 30, it is dispersed in the thermosetting resin composition. The workability of kneading becomes worse. For this reason, it is desirable that the number of carbon atoms of the linear aliphatic hydrocarbon compound be 10 or more and 30 or less.

Such a linear aliphatic hydrocarbon compound is most effective when contained in an amount of from 20% by weight to 90% by weight based on the total weight of the resin component. If the content is less than 20% by weight of the total weight of the resin component, there is almost no effect of lowering the adhesive force in the rubber state, and a large shearing force is required at the time of chip removal, resulting in chip damage. On the other hand, if the content is 90% by weight or more, the adhesive strength in a glassy state is also reduced, so that the temperature cycle reliability is reduced.

[0016]

Embedded image -R ₁ R ₁ = C _n H _{2n + 1} (Formula 13) 8 ≦ n ≦ 30 (n is a positive number)

[0017]

Embedded image —R ₁ —O—R ₂ —R ₁ = C _n H _{2n + 1} R ₂ = C _m H _{2m + 1} (Formula 14) 8 ≦ n + m ≦ 30 (n and m are positive numbers)

[0018]

Embedded image

In addition, at least one of alkoxysilane, titanate and alkoxyaluminum having a linear aliphatic hydrocarbon having 8 to 30 carbon atoms (Chemical Formula 13), (Chemical Formula 14), or (Chemical Formula 15) is converted to the above-mentioned heat. By adding the cured product together with the linear aliphatic hydrocarbon compound chemically bonded to the curable resin, a significant effect of substantially reducing the shear bond strength in the glass state of the cured product and greatly reducing the shear bond strength in the rubber state can be obtained. This is thought to be due to the interaction between the alkoxysilane, titanate, or alkoxyaluminum having a linear aliphatic hydrocarbon coated on the silicon chip surface and the linear aliphatic hydrocarbon chemically bonded to the thermosetting resin. Can be

However, an alkoxysilane, a titanate, an alkoxyaluminum or the like having a linear aliphatic hydrocarbon alone hardly reduces the shear strength in the glassy state of the cured product, and greatly reduces the shear strength in the rubbery state. Is not seen. It seems to help the function of the linear aliphatic hydrocarbon compound chemically bonded to the thermosetting resin.

As the thermosetting resin composition, epoxy resin, acrylic resin, polyimide resin, maleimide resin,
Phenol resin can be used. These resins can be used alone or in combination of two or more. In addition, by reducing the thermal expansion by mixing the inorganic filler, the thermal stress of the silicon chip and the circuit board can be reduced, and the reliability of the temperature cycle can be improved. Furthermore, by adding a rubber component to lower the elastic modulus, the thermal stress of the silicon chip and the circuit board can be reduced, and the reliability of the temperature cycle can be improved.

As a method for repairing a semiconductor device according to the present invention, for example, as shown in FIGS.
There are a method of heating to 50 ° C. to remove by applying a shearing force of rotation about the center of the silicon chip, and a method of heating the silicon chip to remove from the side of the silicon chip by applying a shearing force in a horizontal direction to the substrate. After removing the silicon chip, the resin remaining on the substrate side is polished and flattened, and a new silicon chip is mounted thereon.

As described above, the semiconductor device of the present invention can maintain high temperature cycle reliability in normal use, and
The chip can be easily removed by heating to 0 ° C.

[0024]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 A solder bump electrode having a diameter of 80 μm is provided on a silicon chip electrode having an outer diameter of 10 × 10 mm.
One formed at 0 μm was used. The circuit board used was a two-layer glass epoxy board FR4.

As shown in FIGS. 1A and 1B, the solder bump electrodes 2 of the silicon chip 1 are aligned with the lands of the circuit board and connected by soldering by IR reflow. The thermosetting resin composition 4 prepared by the method was filled and cured to prepare a semiconductor device. The curing condition was 150 ° C. for 1 hour.

The thermosetting resin composition is prepared by mixing bisphenol F diglycidyl ether with tododecenyl succinic anhydride having a linear aliphatic hydrocarbon compound having 12 carbon atoms in an equivalent ratio of 1: 0.95, Spherical silica having an average particle diameter of 4 μm was added by 60% by weight to 2E4MZ-CN epoxy resin, and 1 part by weight was added.

Example 2 Example 2 in which a silicon chip having an outer diameter of 20 × 20 mm was used in Example 1.

Example 3 A silicon chip 1 was used in which solder bump electrodes 2 having a diameter of 80 μm were formed at a center interval of 160 μm on electrodes of a silicon chip having an outer diameter of 10 × 10 mm. The circuit board used was a two-layer glass epoxy board FR4.

As shown in FIGS. 1A and 1B, the solder bump electrodes 2 of the silicon chip 1 are aligned with the lands of the circuit board and connected by soldering by IR reflow. The thermosetting resin composition prepared by the method was filled and cured to prepare a semiconductor device. The curing condition was 150 ° C. for 1 hour.

The thermosetting resin composition 4 is bisphenol F
Tododecenyl succinic anhydride having a linear aliphatic hydrocarbon compound having 12 carbon atoms is mixed with diglycidyl ether at an equivalent ratio of 1: 0.95, and 60% by weight of spherical silica having an average particle size of 4 μm, 1 for 2E4MZ-CN epoxy resin
Part by weight, titanate pre-act KR T having straight-chain aliphatic hydrocarbon having 17 carbon atoms manufactured by Ajinomoto Co., Inc.
TS was prepared by adding 1 part by weight to spherical silica.

Embodiment 4 Embodiment 2 in which a silicon chip having an outer shape of 20 × 20 mm is used.

Example 5 A silicon chip electrode having an outer diameter of 10 × 10 mm was provided with a solder bump electrode having a diameter of 80 μm at a center interval of 16 mm.
One formed at 0 μm was used. The circuit board used was a two-layer glass epoxy board FR4.

As shown in FIGS. 1 (a) and 1 (b), the solder bump electrodes 2 of the silicon chip 1 are aligned with the lands of the circuit board and connected by soldering by IR reflow. The thermosetting resin composition 4 prepared by the method was filled and cured to prepare a semiconductor device. The curing condition was 150 ° C. for 1 hour.

The preparation of the thermosetting resin composition was carried out by the following method. That is, the thermosetting resin composition is obtained by mixing P-aminophenol triglycidyl ether and decyl glycidyl ether having a linear aliphatic hydrocarbon compound having 10 carbon atoms at a weight ratio of 1: 2, 1: 0.
Methylnadic anhydride was added so that the ratio became 95, and 1 part by weight of an imidazole-based curing accelerator 2E4MZ-CN was added to the epoxy resin. Further, 60 parts by weight of spherical silica having an average particle diameter of 4 μm and 1 part by weight of titanate Prenact KR 338X having a straight-chain aliphatic alkoxy group having 16 carbon atoms manufactured by Ajinomoto Co., Inc. were added to the spherical silica.

Embodiment 6 Embodiment 6 in which a silicon chip having an outer shape of 20 × 20 mm is used in Embodiment 5.

Embodiment 7 On a silicon chip, a solder bump electrode having a diameter of 80 μm is provided at a center interval of 16 μm on a silicon chip electrode having an outer shape of 10 × 10 mm.
One formed at 0 μm was used. The circuit board used was a two-layer glass epoxy board FR4.

As shown in FIGS. 1 (a) and 1 (b), the solder bump electrodes of the silicon chip are aligned with the lands of the circuit board.
After solder connection by R reflow, the gap between the electronic component and the circuit board was filled with a thermosetting resin composition prepared by the following method and cured to prepare a semiconductor device. The curing conditions were 80 ° C. for 1 hour and 180 ° C. for 1 hour.

The preparation of the thermosetting resin composition was carried out by the following method. The thermosetting resin composition is a mixture of 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate and behenyl methacrylate having a linear aliphatic hydrocarbon compound having 22 carbon atoms at a weight ratio of 1: 1. 2 parts by weight of a sulfonium salt-based cationic polymerization initiator SI-100L (manufactured by Sanshin Chemical Laboratory), 60% by weight of spherical silica having an average particle size of 4 μm, and carbon Prenact KR of titanate having a linear aliphatic alkoxy group having 26 atoms
46B was added and prepared by adding 1 part by weight to the spherical silica.

Example 8 The same method as in Example 7 except that a silicon chip having an outer shape of 20 × 20 mm was used.

Example 9 A silicon chip having an outer diameter of 10 × 10 mm was provided with a gold bump electrode having a diameter of 80 μm and a center interval of 160 μm.
What was formed in μm was used. The circuit board used was a two-layer glass epoxy board FR4.

As shown in FIGS. 2 (a), 2 (b) and 2 (c), the thermosetting film material 5 prepared by the following method is temporarily placed on a circuit board, and then the silicon chip 1 with gold bumps is removed. The circuit board was heated while applying a load, and the electrical connection between the silicon chip and the circuit board and the curing of the thermosetting film material 5 were simultaneously performed. The curing was performed at 180 ° C. for 3 minutes. The thermosetting film material 5 contains bisphenol F diglycidyl ether and tododecenyl succinic anhydride having a linear aliphatic hydrocarbon compound having 12 carbon atoms in an equivalent ratio of 1: 0.95.
60% by weight of spherical silica having an average particle size of 4 μm,
1 part by weight of 2E4MZ-CN epoxy resin and 1 part by weight of a titanate, Planeact KR TTS, a titanate having a linear aliphatic hydrocarbon having 17 carbon atoms, manufactured by Ajinomoto Co., Inc. were added to 1 part by weight of spherical silica, and the softening temperature of the composition was lowered. The thermosetting reaction was allowed to proceed until the temperature reached 60 ° C. or higher, and then lamination was performed to adjust the thickness to 80 μm.

Embodiment 10 Embodiment 9 in which a silicon chip having an outer shape of 20 × 20 mm is used.

Embodiment 11 A silicon bump 1 having an outer diameter of 10 × 10 mm and a gold bump electrode 6 having a diameter of 80 μm at a center interval of 1 was mounted on the silicon chip 1.
One formed at 60 μm was used. The circuit board used was a two-layer glass epoxy board FR4.

As shown in FIGS. 2A to 2C, the thermosetting film material prepared by the following method is temporarily placed on a circuit board.
Thereafter, the silicon chip provided with the gold bumps was heated while applying a load to the circuit board to simultaneously perform the electrical connection between the silicon chip and the circuit board and the curing of the thermosetting film material. The curing was performed at 180 ° C. for 3 minutes.

The thermosetting film material is prepared by mixing P-aminophenol triglycidyl ether and decyl glycidyl ether having a linear aliphatic hydrocarbon compound having 10 carbon atoms at a weight ratio of 1: 2, and adding the same in this system. 1: 0.9
5 was added, and 1 part by weight of an imidazole-based curing accelerator 2E4MZ-CN was added to the epoxy resin. Furthermore, 60 parts by weight of spherical silica having an average particle diameter of 4 μm and 1 part by weight of a titanate, Prenact KR 338X having a straight-chain aliphatic alkoxy group having 16 carbon atoms, manufactured by Ajinomoto Co., 1 part by weight, were added to the spherical silica. The thermosetting reaction was allowed to proceed until the softening temperature became 60 ° C. or higher, and then lamination was performed to adjust the thickness to 80 μm.

Embodiment 12 Embodiment 12 is the same as Embodiment 11 except that a silicon chip having an outer shape of 20 × 20 mm is used.

Example 13 A silicon bump electrode having an outer diameter of 10 × 10 mm and a gold bump electrode having a diameter of 80 μm at a center interval of 160 mm was formed on the silicon chip.
What was formed in μm was used. The circuit board used was a two-layer glass epoxy board FR4.

As shown in FIGS. 2A to 2C, the thermosetting film material prepared by the following method is temporarily placed on a circuit board.
Thereafter, the silicon chip provided with the gold bumps was heated while applying a load to the circuit board to simultaneously perform the electrical connection between the silicon chip and the circuit board and the curing of the thermosetting film material. The curing was performed at 180 ° C. for 3 minutes.

The thermosetting film material is 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate and behenyl methacrylate having a linear aliphatic hydrocarbon compound having 22 carbon atoms in a weight ratio of 1:
2 parts by weight of a sulfonium salt-based cationic polymerization initiator SI-100L (manufactured by Sanshin Chemical Research Laboratories) based on the epoxy resin and 6 parts of spherical silica having an average particle size of 4 μm were added to the system mixed in 1.
0 wt%, Ajinomoto Co., Inc., titanate having a straight-chain aliphatic alkoxy group having 26 carbon atoms, Planeact K
One part by weight of R46B was added to the spherical silica, and the composition was allowed to undergo a thermosetting reaction until the softening temperature became 60 ° C. or higher, and then a lamination treatment was performed to adjust the composition to a thickness of 80 μm.

Embodiment 14 Embodiment 14 in which a silicon chip having an outer shape of 20 × 20 mm is used in the eleventh embodiment.

Example 15 The shear adhesive strength of the semiconductor devices prepared in Examples 1 to 14 and Comparative Examples 1 to 6 was measured by the following method.

The measurement of the shear adhesive strength at 25 ° C. was performed as follows.

The upper surface of the silicon chip was bonded to a stainless steel supporting metal with a structural adhesive. The circuit board side was similarly adhered to the supporting metal. The supporting metal was attached to a tensile tester and subjected to a shearing force. Sufficiently strong structural adhesive (Scotch Weld SW-2214, Sumitomo 3M Limited)
) Caused shear fracture in the gap between the silicon chip and the circuit board. The load at this time was divided by the bonding area between the silicon chip and the circuit board to obtain a shear bonding strength of 25 ° C.

The measurement of the shear adhesive strength at 250 ° C. was performed as follows.

Using a DAGE universal bond tester, Series 2400PC, the circuit board was heated to 250 ° C. on a hot stage and a shear force was applied from one side of the silicon chip using a die shear load cell and tool.
When a sufficient shearing force was applied, shear fracture occurred in the gap between the silicon chip and the circuit board. The load at this time was divided by the adhesive area between the silicon chip and the circuit board to obtain a shear adhesive strength of 250 ° C.

Further, the appearance of the silicon chip after this test was observed, and the presence or absence of chip breakage was examined.

Example 16 The temperature cycle reliability of the semiconductor devices prepared in Examples 1 to 14 and Comparative Examples 1 to 6 was measured under the following conditions.

The test was carried out under a temperature cycle condition of a constant temperature layer at 0 ° C. for 30 minutes and a constant temperature layer at 100 ° C. for 30 minutes. Judgment of failure is
It was when disconnection or short circuit occurred.

COMPARATIVE EXAMPLE 1 A solder bump electrode having a diameter of 80 μm was placed on a silicon chip electrode having an outer diameter of 10 × 10 mm.
One formed at 0 μm was used. The circuit board used was a two-layer glass epoxy board FR4.

As shown in FIGS. 1A and 1B, the solder bump electrodes of the silicon chip are aligned with the lands of the circuit board, and
After solder connection by R reflow, the gap between the electronic component and the circuit board was filled with a thermosetting resin composition prepared by the following method and cured to prepare a semiconductor device. The curing was performed at 150 ° C. for 1 hour.

The thermosetting resin composition was prepared by mixing bisphenol F diglycidyl ether with methylnadic anhydride in an equivalent ratio of 1: 0.95, and adding 60% by weight of spherical silica having an average particle size of 4 μm to a 2E4MZ-CN epoxy resin. To 1 part by weight of the mixture.

Comparative Example 2 Comparative Example 1 in which a silicon chip having an outer shape of 20 × 20 mm was used.

COMPARATIVE EXAMPLE 3 A solder bump electrode having a diameter of 80 μm was formed on a silicon chip electrode having an outer diameter of 10 × 10 mm.
One formed at 0 μm was used. The circuit board used was a two-layer glass epoxy board FR4.

As shown in FIGS. 1 (a) and 1 (b), the solder bump electrodes of the silicon chip are aligned with the lands of the circuit board.
After solder connection by R reflow, the gap between the electronic component and the circuit board was filled with a thermosetting resin composition prepared by the following method and cured to prepare a semiconductor device. The curing was performed at 150 ° C. for 1 hour.

The thermosetting resin composition was prepared by mixing bisphenol F diglycidyl ether with methyl nadic anhydride in an equivalent ratio of 1: 0.95, and adding 60% by weight of spherical silica having an average particle size of 4 μm to a 2E4MZ-CN epoxy resin. And 1 part by weight of Titanate Preneact KR TTS having a linear aliphatic hydrocarbon having 17 carbon atoms manufactured by Ajinomoto Co., Inc. was added to the spherical silica.

Comparative Example 4 Comparative Example 1 using a silicon chip having an outer shape of 20 × 20 mm.

COMPARATIVE EXAMPLE 5 A silicon chip having an outer diameter of 10 × 10 mm was provided with gold bump electrodes having a diameter of 80 μm at a center interval of 160 mm.
What was formed in μm was used. The circuit board used was a two-layer glass epoxy board FR4.

As shown in FIGS. 2A to 2C, the thermosetting film material prepared by the following method is temporarily placed on a circuit board.
Thereafter, the silicon chip provided with the gold bumps was heated while applying a load to the circuit board to simultaneously perform the electrical connection between the silicon chip and the circuit board and the curing of the thermosetting film material. The curing was performed at 180 ° C. for 3 minutes.

The thermosetting film material is bisphenol F diglycidyl ether and methylnadic anhydride having a linear aliphatic hydrocarbon compound having 12 carbon atoms in an equivalent ratio of 1:
0.95 and mixed with spherical silica having an average particle size of 4 μm.
1% by weight based on the weight of the 2E4MZ-CN epoxy resin, and the composition was allowed to undergo a thermosetting reaction until the softening temperature reached 60 ° C. or higher.
It was adjusted to be 0 μm.

Comparative Example 6 Comparative Example 5 using a silicon chip having an outer shape of 20 × 20 mm.

[0071]

【The invention's effect】

[0072]

[Table 1]

[0073]

[Table 2]

Table 1 shows the features of the structures of the semiconductor devices described in the examples and comparative examples. Table 2 shows the shear bond strength (25 ° C., 250 ° C.) required for chip removal of the semiconductor device described in the examples and comparative examples, the presence / absence of chip destruction upon chip removal, and the results of temperature cycle reliability.

Comparative Examples 1 to 3 having no linear aliphatic hydrocarbon
In No. 6, the adhesive strength at 25 ° C. is 5 Mpa or more and the reliability is good, but the adhesive strength at 250 ° C. is still higher than 1 Mpa, which is relatively high. For this reason, chip destruction is relatively unlikely to occur in a semiconductor device using a 10 × 10 mm silicon chip as in Comparative Examples 1, 3, and 5 at chip removal at 250 ° C., but in a 20 × 20 mm silicon chip,
When removing the chip, a large stress is required, causing chip destruction.

On the other hand, Examples 1 to 14 having a linear aliphatic hydrocarbon compound having 10 to 30 carbon atoms have 2
The adhesive strength at 5 ° C. is relatively high at 5 Mpa or more, and the temperature cycle reliability is good. In addition, the adhesive force was significantly reduced at 250 ° C. and reached 1 Mpa or less. This is considered to be due to the fact that heating to a high temperature caused the linear aliphatic hydrocarbon to perform a vigorous thermal motion, so that the adhesive force was significantly reduced. As a result, even a silicon chip of 20 × 20 mm was successfully removed without causing chip destruction.

In the semiconductor device of the present invention, the active surface of the silicon chip is directed toward the circuit board and electrically connected to the circuit board via a conductive material, and the gap between the silicon chip and the circuit board is filled with a thermosetting resin composition. By providing a feature in a filled and cured semiconductor device that it has a linear aliphatic hydrocarbon compound having 10 to 30 carbon atoms chemically bonded to molecules, the shear adhesive strength between the silicon chip and the circuit board is reduced to 25.
It satisfies the value of 5 Mpa or more at 0 ° C. and 1 Mpa or less at 250 ° C., and enables both high reliability and good chip detachability.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a process flow of a semiconductor device which is Embodiment 1 of the present invention.

FIG. 2 is a sectional view showing a process flow of a semiconductor device which is Embodiment 2 of the present invention.

FIG. 3 is a sectional view showing a repair method of a semiconductor device according to a third embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Silicon chip, 2 ... Solder bump electrode, 3 ... Glass epoxy board, 4 ... Thermosetting resin composition containing linear aliphatic hydrocarbon compound, 5 ... Film material containing linear aliphatic hydrocarbon compound, 6 ... Gold bump electrode, 7 ... Drive section, 8
... heater, 9 ... head, 10 ... holding jig, 11 ...
Table, 12: Polishing jig, 13: Dust suction port, 14: New silicon chip, 15: New solder bump electrode.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification symbol FI C08L 63/00 C08L 63/00 C (72) Inventor Takumi Ueno 7-1-1, Omikamachi, Hitachi, Ibaraki Prefecture Hitachi, Ltd. (72) Inventor Shuji Eguchi 7-1-1, Omika-cho, Hitachi City, Ibaraki Prefecture Inside Hitachi, Ltd. Hitachi Research Laboratory

Claims (13)

[Claims] 1. A semiconductor in which an active surface of a silicon chip is electrically connected to a circuit board via a conductive material with an active surface facing the circuit board, and a gap between the silicon chip and the circuit board is filled and cured with a thermosetting resin composition. In the apparatus, the shear adhesive strength between the silicon chip and the circuit board is 5 Mpa or more at 25 ° C.
A semiconductor device having a temperature of 1 Mpa or less at 50 ° C. 2. A semiconductor in which an active surface of a silicon chip is directed toward a circuit board and electrically connected to the circuit board via a conductive material, and a gap between the silicon chip and the circuit board is filled and cured with a thermosetting resin composition. In the apparatus, the thermosetting resin composition is used to form a linear aliphatic hydrocarbon compound having 10 to 30 carbon atoms that is chemically bonded to the thermosetting resin component in the thermosetting resin composition. A semiconductor device comprising 20% by weight or more and 90% by weight or less of the total weight of a resin component in a resin composition. (3) Embedded image In a semiconductor device in which an active surface of a silicon chip is electrically connected to a circuit board via a conductive material with the active surface facing the circuit board side and a gap between the silicon chip and the circuit board is filled and cured with a thermosetting resin composition, The curable resin composition contains one or two of (Chemical Formula 1) and (Chemical Formula 2) in an amount of 20% by weight or more and 90% by weight or less of the total weight of the resin component in the thermosetting resin composition. Semiconductor device. 4. A semiconductor in which an active surface of a silicon chip is directed toward a circuit board and electrically connected to the circuit board via a conductive material, and a gap between the silicon chip and the circuit board is filled and cured with a thermosetting resin composition. In the apparatus, the thermosetting resin composition is used for thermosetting a linear aliphatic hydrocarbon compound having 10 to 30 carbon atoms that is chemically bonded to a thermosetting resin component in the thermosetting resin composition. Of alkoxysilane, titanate or alkoxyaluminum containing 20 to 90% by weight of the total weight of the resin component in the conductive resin composition and having a linear aliphatic hydrocarbon having 8 to 30 carbon atoms. A semiconductor device comprising at least one kind. (5) Embedded image Embedded image Embedded image Embedded image Embedded image Embedded image In a semiconductor device in which an active surface of a silicon chip is electrically connected to a circuit board via a conductive material with the active surface facing the circuit board side and a gap between the silicon chip and the circuit board is filled and cured with a thermosetting resin composition, The curable resin composition contains one or two of (Chemical Formula 1) and (Chemical Formula 2) in an amount of 20% by weight or more and 90% by weight or less based on the total weight of the resin components in the thermosetting resin composition; A semiconductor device comprising at least one of (Chem. 3), (Chem. 4), (Chem. 5), (Chem. 6), (Chem. 7), (Chem. 8), and (Chem. 9). 6. An underfill material for sealing a gap between an active surface of a silicon chip and a circuit board, wherein the underfill material comprises an epoxy compound having a linear aliphatic hydrocarbon having 10 to 30 carbon atoms. An underfill material comprising 20% by weight or more and 90% by weight or less of the total weight of the resin component in the underfill material. 7. An underfill material for sealing a gap between an active surface of a silicon chip and a circuit board, wherein the underfill material contains a thermosetting epoxy resin and an acid anhydride,
An underfill containing 25% by volume or more and 60% by volume or less of an inorganic filler; and 20% by weight or more and 90% by weight or less of the total weight of the resin components in the underfill material. Fill material. 8. An underfill material for sealing a gap between an active surface of a silicon chip and a circuit board, wherein the underfill material comprises an epoxy compound having a linear aliphatic hydrocarbon having 10 to 30 carbon atoms. At least 20% by weight or less and 90% by weight or less of the total weight of the resin component in the underfill material and at least one of alkoxysilane, titanate and alkoxyaluminum having a linear aliphatic hydrocarbon having 8 to 30 carbon atoms. An underfill material comprising one kind. 9. An underfill material for sealing a gap between an active surface of a silicon chip and a circuit board, wherein the underfill material contains a thermosetting epoxy resin and an acid anhydride, and contains 25 inorganic fillers. Volume% or more and 60 volume% or less,
And (Chemical Formula 1) is contained in an amount of 20% by weight or more and 90% by weight or less based on the total weight of the resin component in the underfill material;
An underfill material comprising at least one of (Chem. 3), (Chem. 4), (Chem. 5), (Chem. 6), (Chem. 7), (Chem. 8), and (Chem. 9). 10. A thermosetting film material for bonding an active surface of a silicon chip to a circuit board, wherein the thermosetting film material has a linear aliphatic hydrocarbon compound having 10 to 30 carbon atoms. Is contained in an amount of 20% by weight or more and 90% by weight or less of the total weight of the resin component in the thermosetting film material. 11. A thermosetting film material for bonding an active surface of a silicon chip to a circuit board, wherein the thermosetting film material has a thermosetting epoxy resin, and contains 25% by volume or more of an inorganic filler. A thermosetting film material comprising 60% by volume or less and (Chemical Formula 1) in an amount of 20% by weight or more and 90% by weight or less based on the total weight of the resin components in the thermosetting film material. 12. A thermosetting film material for bonding an active surface of a silicon chip to a circuit board, wherein said thermosetting film material has a linear aliphatic hydrocarbon compound having 10 to 30 carbon atoms. Of 20 to 90% by weight based on the total weight of the resin component in the thermosetting film material, and having a linear aliphatic hydrocarbon having 8 to 30 carbon atoms. A thermosetting film material comprising at least one kind of alkoxyaluminum. 13. A thermosetting film material for bonding an active surface of a silicon chip to a circuit board, wherein said thermosetting film material has a thermosetting epoxy resin, and contains 25% by volume or more of an inorganic filler. 60% by volume or less, and (Chemical Formula 1) in an amount of 20% by weight or more and 90% by weight or less of the total weight of the resin component in the thermosetting film material, and (Chemical Formula 3), (Chemical Formula 4) , (Chem. 5), (Chem. 6), (Chem. 7), (Chem. 8),
A thermosetting film material comprising at least one of the following (Chem. 9).