JPH11230760A - Semiconductor vibration gyro sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce consumption power and enable massproduction by applying Colioli's force due to angular velocity to a weight on a diaphragm, and detecting displacement of the diaphragm which is caused by the Colioli's force, as an electrostatic capacity. SOLUTION: A weight part 3 of a frame body 2 is provided with weights 10a-10d and arranged on a retaining plate member 4 whose bottom part is a diaphragm 12. An electrode part 5 formed in a bottom plate member 6 consists of driving electrodes 19, 20, angular velocity detecting electrodes 21, 22, etc. Each of the electrodes 19-21 are formed at positions almost facing the respective corresponding part positions of the diaphragm 12. When an AC signal as a driving signal is applied to the driving electrodes 19, 20, the weights 10a-10d are vibrated together with the diaphragm 12 by the action of an electrostatic force. In this state, when a rotating force acts around a Z axis, Colioli's force is generated in the weights 10a-10d, displacement of the diaphragm 12 is generated, and electrostatic capacities between the detecting electrodes 21, 22 and the corresponding diaphragm 12 are changed. An angular velocity around the Z axis can be measured from the absolute value of difference between the respective electrostatic capacity values of the detecting electrodes 21 and 22.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vibrating gyro sensor capable of detecting an occurrence of a so-called Coriolis force and capable of measuring an angular velocity and the like, and more particularly to a vibrating gyro sensor having an expanded measuring capability.

[0002]

2. Description of the Related Art Conventionally, as this type of sensor, for example, as disclosed in Japanese Patent Application Laid-Open No. Hei 7-301536,
When a so-called tuning fork vibrator is provided, and a magnetoresistive element is disposed on a plane portion of the tuning fork vibrator, and when the tuning fork vibrator is vibrated, when a rotational force acts around the longitudinal axis direction of the vibrator. In addition, there has been known and well-known an apparatus which is capable of measuring an angular velocity by detecting a change in a resistance value of a magnetoresistive element by torsional vibration caused by Coriolis force generated in a tuning fork vibrator.

[0003]

However, in the case of the conventional sensor as described above, since the angular velocity around one axis can be measured only, for example, in an apparatus such as a vehicle, acceleration is measured in addition to the angular velocity. If measurement is desired, it is necessary to provide a separate sensor for measuring acceleration. In addition, even when it is desired to measure the degree of angle in a plurality of axes, for example, three axes that are orthogonal to each other, it is necessary to provide a dedicated sensor for each of the axes for which measurement is desired. In a vehicle or the like in which various components and the like must be arranged in a narrow installation space, the expansion of the installation space is not an easy problem. Further, providing a plurality of sensors,
There is a problem that the price of the device is increased.

The present invention has been made in view of the above circumstances, and provides a semiconductor vibrating gyro sensor capable of measuring angular velocity and acceleration with a single sensor and having high productivity. It is another object of the present invention to provide a semiconductor vibrating gyro sensor capable of measuring angular velocities on a plurality of axes and having high productivity. Still another object of the present invention is to provide a semiconductor vibrating gyro sensor that requires low power consumption.

[0005]

According to a first aspect of the present invention, there is provided a semiconductor vibrating gyro sensor provided with a diaphragm formed of a semiconductor member and opposed to the diaphragm, to which a predetermined excitation signal is applied. Two drive electrodes, two angular velocity detection electrodes provided opposite to the diaphragm, and detecting capacitance between the two electrodes, and the two drive electrodes and the two angular velocity detection of the diaphragm And four weights provided on a surface opposite to the surface facing the application electrode, and the diaphragm and the two drive electrodes are provided in a state where an excitation signal is applied to each of the two drive electrodes. And said 2
Change in capacitance obtained between the two angular velocity detection electrodes and the diaphragm when a rotational force acts on an axis along a direction orthogonal to the direction facing the two angular velocity detection electrodes The angular velocity can be measured based on

[0006] Such a configuration is particularly advantageous in that when a predetermined excitation signal is applied to the two drive electrodes, when a rotational force is generated about an axis along the direction in which the diaphragm and the electrode face each other, Coriolis acting on the weight is applied. This focuses on the displacement of the diaphragm caused by the force. In other words, by appropriately arranging the four weights, the two are grouped together, each of which is just a tuning fork vibrator, vibrates by Coriolis force, and the diaphragm is displaced. It can be regarded as a change in capacitance between the electrodes disposed at the opposing positions, and the change depends on the rotational force, that is, the magnitude of the angular velocity, so that the angular velocity can be detected. .

According to a fourth aspect of the present invention, there is provided a semiconductor vibrating gyroscope comprising: a diaphragm formed of a semiconductor member; a drive electrode provided to face the diaphragm, to which a predetermined excitation signal is applied; A set of X-axis detection electrodes arranged so as to face the diaphragm at a predetermined interval around the periphery, and the set of X-axis detection electrodes are arranged at a predetermined interval around the drive electrode. A set of Y-axis detection electrodes arranged to face the diaphragm in a direction orthogonal to the arrangement direction, and a set of the X-axis detection electrodes and the set of Y-axis detection electrodes. Four first Z-axis detection electrodes respectively arranged on one side of each electrode, and the first Z-axis of each of the set of X-axis detection electrodes and the set of Y-axis detection electrodes When the detection electrode is Four second Z-axis detection electrodes respectively disposed beside the respective electrodes on the side, the drive electrode of the diaphragm, the set of X-axis detection electrodes, the set of Y-axis detection electrodes, And four weights disposed on a surface opposite to a surface facing the four first Z-axis detection electrodes and the four second Z-axis detection electrodes, and exciting the drive electrodes. In a state where a signal is applied, when a rotational force about a first axis along the direction in which the set of Y-axis detection electrodes is applied acts on the set of X-axis detection electrodes, It is possible to measure an angular velocity acting on the first axis based on the amount of change in capacitance between the diaphragm and the diaphragm, and to measure the angular velocity acting along the direction in which the set of X-axis detection electrodes is provided. When a rotational force about the second axis acts, the set of Y-axis detection electrodes and the diaphragm Measurement of the angular velocity acting on the second axis as a center based on the amount of change in capacitance between the third axis and the third axis along a direction orthogonal to the plane including the diaphragm When a rotational force acts, the diaphragm and the four first Zs
Acted around the third axis based on the amount of change between the capacitance between the axis detection detection electrode and the capacitance between the diaphragm and the four second Z-axis detection electrodes. This makes it possible to measure angular velocity.

[0008] Such a configuration is particularly advantageous when a predetermined excitation signal is applied to the drive electrode and the four weights are brought into a predetermined vibration state, and when a rotational force about a predetermined axis acts on the whole, It focuses on the displacement of the diaphragm due to the Coriolis force acting on the weight. In other words, by appropriately arranging the four weights, the two are grouped together, each of which is just a tuning fork vibrator, vibrates by Coriolis force, and the diaphragm is displaced. It can be regarded as a change in capacitance between the electrodes disposed at the opposing positions, and the change depends on the rotational force, that is, the magnitude of the angular velocity, so that the angular velocity can be detected. . In particular, the present invention is characterized in that electrodes are arranged so that angular velocities in three orthogonal directions can be measured so that angular velocities in three orthogonal axes are possible.

[0009]

FIG. 1 to FIG. 30 show a semiconductor vibrating gyro sensor according to an embodiment of the present invention.
This will be described with reference to FIG. The members, arrangements, and the like described below do not limit the present invention, and can be variously modified within the scope of the present invention. First, a first example will be described with reference to FIGS. The semiconductor vibrating gyro sensor S1 in the first example has a flat upper plate member 1 made of a semiconductor member such as silicon and a non-conductive member such as glass, for example. Frame 2 using
And a weight portion 3 disposed inside the frame 2, a support plate member 4 using a semiconductor member such as silicon, and a non-conductive member such as glass, for example. It is roughly divided into the bottom plate member 6 formed and has a so-called four-layer structure (see FIG. 1).

More specifically, first, the weight portion 3 is formed of a tetrahedron made of glass, more specifically, for example, four first to fourth weights 10a formed in a cubic shape. ~
10d, and these first to fourth weights 10a to 10a
d is disposed on the support plate member 4 as described below (see FIG. 2). For convenience, the depth direction of the support plate member 4 shown in FIG. 2 is the X-axis direction, the horizontal direction of the support plate member 4 in FIG. 2 is the Y-axis direction, and the X and Y axis directions are orthogonal to each other. Direction is defined as the Z-axis direction (see FIG. 2). First, the support plate member 4 will be described. The support plate member 4 is formed by using silicon and has an approximately flat plate-like appearance. A recess 11 having a substantially square planar shape (a shape appearing on the XY plane) is formed so as to have a thin film shape except for a diaphragm 12 at the bottom.
(See FIGS. 1 and 2).

In addition, four first to fourth weight support portions 13a to 13d are formed at a part of the bottom of the concave portion 11 while leaving silicon without being deleted. That is, the first to fourth weight supporting portions 13a to 13d
In the first example, the whole is formed in a frustum shape so that its vertical cross-sectional shape (shape appearing on the ZY plane) becomes, for example, an inverted trapezoidal shape as shown in FIG. , And the thickness in the Z-axis direction are the same as those around the recess 11 (see FIG. 1). In the first example, the first to fourth weight supporting portions 13a to 13d are
The first to fourth weight support portions 13a to 13d are disposed approximately symmetrically with respect to the center of the concave portion 11.
First to fourth weights 10a to 10d are joined on one surface side to the top of the first to fourth weight support portions 13a to 13d.
3d (see FIGS. 1 and 2). In addition, on one side of the support plate member 4, first to fifth external connection electrodes 24a to 24e provided on the bottom plate member 6 to be described later, in order to facilitate connection of wiring to the outside, A notch 14 is formed (see FIG. 2). The first to fourth weights 1 of the support plate member 4 described above.
0a to 10d, first to fourth weight support portions 13a to 13
The diaphragm 12, the diaphragm 12, and the like are integrally formed by a so-called semiconductor manufacturing technique using a silicon substrate.

The frame 2 made of glass has a planar shape (a shape appearing on the XY plane) formed in a so-called frame shape, and the XY plane has a rectangular opening. One surface of the frame 2 is joined to a surface around the support plate member 4 so that the above-described weight portion 3 is housed in the opening, and the other surface of the frame 2 , The upper plate member 1 is joined (see FIG. 1).
The outer shape of the upper plate member 1 is formed in a flat plate shape.
5d is formed (see FIG. 1). In FIG. 1, only the concave portions 15a and 15c are shown, and the other concave portions 15b and 15d are not shown.

A portion formed by the gap recesses 15a to 15d to have a smaller thickness in the Z-axis direction than the surroundings acts as a stopper 16. That is, when an excessive impact is applied to the semiconductor vibration gyro sensor S1, for example, the first to fourth weights 10a to 10d vibrate due to the impact and collide with each other. It is intended to prevent such damage.

At substantially the center of the bottom of each of the four gap recesses 15a to 15d, a damping adjustment hole 17 is formed, respectively. The so-called damping is prevented from being too effective. The damping adjusting hole 17 is required when the so-called packaging of the semiconductor vibrating gyro sensor S1 is substantially the same as the atmosphere. When the packaging is performed in a vacuum, the damping is not performed. Since this is reduced, the damping adjustment hole 17 is not required.

Next, the bottom plate member 6 on which the electrode portion 5 is formed has an outer peripheral shape formed in substantially the same rectangular shape as the above-described support plate member 4 and the like. A flat plate portion on the side corresponding to the plate member 4 includes a support plate member 4
While a plurality of portions to be joined are formed, the glass is removed by a predetermined thickness from these portions, so that the cross section in the Z-axis direction becomes concave with respect to the preceding portion (see FIG. 1). (See FIG. 3).

In the electrode disposing portion 18, the electrode portion 5 is formed as described below. That is, the electrode unit 5 includes the first drive electrode 19, the second drive electrode 20,
The first detection electrode 21 for angular velocity, the second detection electrode 22 for angular velocity, the acceleration detection electrode 23, and the first to fifth external connection electrodes 24a to 24e are main components (FIGS. 3 and 5). 4). The first and second drive electrodes 19 and 20 and the first and second angular velocity detection electrodes 21 and 22 are arranged around the acceleration detection electrode 23 (FIG. 4). reference). When the bottom plate member 6 is joined to the support plate member 4, the acceleration detection electrodes 23 are connected to the first to fourth weights 10 a to 10 a.
4D, the diaphragm 12 is provided at a position substantially opposed to a portion of the diaphragm 12 surrounded by a circle d. In the first example, the planar shape is formed in a substantially square shape (FIG. 4).
reference).

On the other hand, the first and second drive electrodes 19 and 20
And the first and second angular velocity detecting electrodes 21 and 22 are:
Each of the electrodes formed in a square shape larger than the acceleration detection electrode 23 has a planar shape in which one corner is cut out, and the side of the cutout portion is the acceleration detection electrode 23
Are arranged so as to face one side with a gap therebetween, and all are formed to have substantially the same size (see FIG. 4). Then, the first drive electrode 1
Reference numeral 9 denotes the first and fourth weights 10a and 10d and the support plate member 4.
(See FIGS. 2 to 5). The second drive electrode 20 is connected to the second and third weights 10.
It is disposed at a position substantially opposite to the position of the diaphragm 12 surrounded by the corners of the support plate member 4 and b (see FIGS. 2 to 5).

The first angular velocity detecting electrode 21 is disposed at a position substantially opposite to the diaphragm 12 surrounded by the first and second weights 10a and 10b and the corners of the support plate member 4. (See FIGS. 2 to 5). The second angular velocity detection electrode 22 is disposed at a position substantially opposed to the diaphragm 12 surrounded by the third and fourth weights 10 c and 10 d and the corners of the support plate member 4. (See FIGS. 2 to 5).

The first and second drive electrodes 1
9, 20, first and second angular velocity detection electrodes 21, 22
And the acceleration detection electrode 23 and the first to fourth weights 10a to 10a-1
0d, as shown in FIG.
When viewed on the XY plane, first, the first weight 10a is located at a position so as to straddle both the first drive electrode 19 and the first angular velocity detection electrode 21. In addition, the second weight 10
b denotes the first angular velocity detection electrode 21 and the second drive electrode 2
It is a position that straddles both of the zeros. Further, the third weight 10c is positioned so as to straddle both the second drive electrode 20 and the second angular velocity detection electrode 22. Further, the fourth weight 10c is located so as to straddle both the first drive electrode 19 and the second angular velocity detection electrode 22.

On the other hand, the first to fifth external connection electrodes 24
a to 24e are each formed in a substantially square shape, and at a portion opposed to the cutout portion 14 of the support plate member 4,
They are arranged on a substantially straight line at appropriate intervals (see FIG. 3).
And FIG. 4). Then, the first external connection electrode 24a
And the first drive electrode 19 are connected via a first connection wiring 25a appropriately disposed (FIGS. 3 and 4).
reference). Further, the second external connection electrode 24b and the first angular velocity detection electrode 21 are connected via a second connection wiring 25b that is appropriately disposed (see FIGS. 3 and 4). . Furthermore, the third external connection electrode 24c and the acceleration detection electrode 23 are connected to the third connection wiring 2 appropriately disposed.
5c (see FIGS. 3 and 4). Further, the fourth external connection electrode 24d and the second drive electrode 2
0 is connected via an appropriately arranged fourth connection wiring 25d (see FIGS. 3 and 4). Further, the fifth external connection electrode 24e and the second angular velocity detection electrode 22 are connected to a fifth connection wiring 25 appropriately disposed.
e (see FIGS. 3 and 4).

The first and second drive electrodes 1
9, 20, first and second angular velocity detection electrodes 21,
2, acceleration detection electrode 23, first to fifth external connection electrodes 24a to 24e, and first to fifth connection wiring 25a
Reference numerals 25e to 25e are made of a conductive member, and are preferably, for example, aluminum and copper.

Next, the operation in the above configuration will be described with reference to FIG.
This will be described with reference to FIGS. First, a method of driving the semiconductor vibrating gyro sensor S1 and a schematic form of vibration will be described with reference to FIGS. First, voltages having appropriate frequencies are alternately applied to the first and second drive electrodes 19 and 20 as so-called excitation signals. In other words, AC signals (or repetitive pulse signals) having the same frequency and different phases by 180 degrees are applied. It is assumed that the support plate member 4 on which the diaphragm 12 is formed is connected to a so-called circuit ground of a signal generator (not shown) for generating the above-described excitation signal and a common circuit ground.

By applying the excitation signal, the first and second
Electrostatic force acts between the drive electrodes 19 and 20 of the diaphragm 12 and the corresponding part of the diaphragm 12, and as a result, the diaphragm 12 vibrates, and the vibration causes the first to fourth weights 10a.
10 to 10d also vibrate. This diaphragm 12
And the form of vibration of the first to fourth weights 10a to 10d is
As will be described later, it differs in various ways depending on the frequency of the excitation signal. FIGS. 6 to 8 show this diaphragm 12.
The state of displacement of the first to fourth weights 10a to 10d with respect to the above vibration is schematically shown, and will be described below with reference to FIG. For example, the first to fourth diaphragms 12
When the portion surrounded by the weights 10a to 10d is displaced toward the electrode portion 5 by electrostatic force, the first to fourth weights 10a to 10d are displaced.
a to 10d swing in such a direction that the interval between them becomes smaller (see FIG. 6). FIGS. 6 to 8 show how the first and third weights 10a and 10c oscillate, and the second and fourth weights 10b and 10d are not shown.

On the other hand, when the above-described portion of the diaphragm 12 is displaced away from the electrode portion 5, the first to fourth
The weights 10a to 10d also swing in the direction in which the mutual interval increases (see FIG. 7). The diaphragm 12 described above
Are alternately generated in accordance with the change in the amplitude of the excitation signal, resulting in a vibration state. As a result, the first to fourth weights 10a to 10a
d also becomes a vibration state by repeating the above-described two states (see FIG. 8).

Next, a more specific diaphragm 12 and first to fourth weights 10a to 10a corresponding to the frequency of the excitation signal
The typical vibration mode of d will be described with reference to FIGS. 9 to 13. First, FIG. 9 schematically illustrates the state of vibration when the frequency of the excitation signal is 780 Hz. In this case, the portion of the diaphragm 12 surrounded by the first to fourth weights 10a to 10d (the portion displayed in a so-called shaded state in FIG. 9) vibrates in the Z-axis direction. In particular, in the case where the hatched portion is separated from the electrode portion 5 in FIG. 9, in other words, when the portion is displaced from the back side to the front side in FIG. 9, the first to fourth weights 10 a to 10 d In the same figure, it swings in the direction indicated by the solid arrow. In addition, diaphragm 1
When 2 is displaced in the direction approaching the electrode section 5,
The first to fourth weights 10a to 10d swing in the direction opposite to the solid arrow in FIG.

Next, the case where the frequency of the excitation signal is set to 2019 Hz will be described. In this case, in FIG. 10, a hatched portion of the diaphragm 12 (a portion of the diaphragm 12 between the second and third weights 10b and 10c).
Vibrates in the Z-axis direction, and a portion (the first and fourth weights 10) of the diaphragm 12 surrounded by a dotted line in FIG.
a, 10d) is the same as Z
It will vibrate in the axial direction. For example, in FIG. 10, the vibration of the two parts is such that the hatched part of the diaphragm 12 (the part of the diaphragm 12 between the second and third weights 10 b and 10 c) is separated from the electrode unit 5. In the case of displacement (in other words, displacement from the back side to the front side), the diaphragm 1 surrounded by a dotted line in FIG.
The second portion (the portion of the diaphragm 12 between the first and fourth weights 10a and 10d) is in a state of being displaced in a direction approaching the electrode portion 5 (in other words, being displaced from the front side of the paper surface to the back side). Things.

When the diaphragm 12 is displaced as described above, the first weight 10a and the fourth weight 1
The second weight 10b and the third weight 10c swing in a direction away from each other (see the solid arrow in FIG. 10). Particularly, in this case, the first and fourth weights 10a, 10a
d can be regarded as vibrating as a set of so-called tuning fork vibrators. The second and third weights 10
Similarly, b and 10c can be regarded as vibrating as a set of tuning fork type vibrators.

When the frequency of the excitation signal is 2019 Hz,
There is another form of vibration in addition to the form shown in FIG. 10, and a schematic state thereof is shown in FIG.
The form of this vibration will be described. In this case, when a certain moment of the vibration is captured, in FIG.
At the same time as the portion of the diaphragm 12 between the second weights 10a and 10b is displaced from the back side to the front side in FIG.
The third and fourth weights 10c, 1 surrounded by dotted lines in FIG.
The portion of the diaphragm 12 during 0d is displaced from the front side to the back side of the drawing. Then, the first weight 10a and the second weight 10b swing in a direction away from each other (FIG. 1).
1), the third weight 10c and the fourth weight 1
0d swings in a direction approaching each other (FIG. 1
1 (see solid arrow).

Next, a case where the frequency of the excitation signal is 2388 Hz will be described with reference to FIG. in this case,
Capturing a moment of vibration, as shown in FIG. 12,
The hatched two portions of the diaphragm 12, that is, the portion a surrounded by the second weight 10b, the third weight 10c, and the corner of the support plate member 4, the first weight 10a, 4 is displaced from the back side of the drawing to the front side of the drawing, and at the same time two portions surrounded by dotted lines of the diaphragm 12 in FIG. Parts, that is, a part c surrounded by the first weight 10a, the second weight 10b, and the corner of the support plate member 4,
The portion d surrounded by the third weight 10c, the fourth weight 10d, and the corner of the support plate member 4 is displaced from the front side to the back side of the paper. And the first and second weights 10
a and 10b swing in the direction of the part c (see the solid arrow in FIG. 12), while the third and fourth weights 10c and 10d swing in the direction of the part d (see the solid arrow in FIG. 12). .

Next, the case where the frequency of the excitation signal is 3322 Hz will be described with reference to FIG. in this case,
Capturing the moment of vibration, as shown in FIG.
Around the first weight 10a, the first weight 10
The portion e of the diaphragm 12 on the left side of the drawing (the portion shaded in FIG. 13) e is displaced from the back side to the front side of the drawing, and at the same time, the portion of the diaphragm 12 on the right side of the first weight 10a (FIG. 13). At the site surrounded by a dotted line) f
Is displaced from the front side to the back side of the drawing. Also,
Around the second weight 10b, the second weight 1 in FIG.
The portion g of the diaphragm 12 on the upper side of the paper surface of FIG. 13 (the hatched portion in FIG. 13) is displaced from the back surface side of the paper surface to the front surface side, and at the same time, the portion of the diaphragm 12 below the second weight 10b on the paper surface (see FIG. (A site surrounded by a dotted line)
h is displaced from the front side to the back side of the drawing.

Further, around the third weight 10c, a portion of the diaphragm 12 on the right side of the paper of the third weight 10c in FIG. 13 (a portion shaded in FIG. 13).
i is displaced from the back side to the front side of the drawing, and at the same time, the portion of the diaphragm 12 on the left side of the third weight 10c in the drawing (FIG. 13).
) J is displaced from the front side to the back side of the drawing. Furthermore, the fourth weight 10d
13, the portion k of the diaphragm 12 below the fourth weight 10 d in FIG. 13 (the shaded portion in FIG. 13) is displaced from the back side to the front side in FIG. Diaphragm 12 on the upper side of the drawing
(A portion surrounded by a dotted line in FIG. 13) 1 is displaced from the front side to the back side of the drawing. And the first
The weight 10a moves toward the part f, the second weight 10b moves toward the part h, the third weight 10c moves toward the part j, and the fourth weight 10d moves toward the part l. , Respectively. It should be noted that the frequencies of the excitation signals shown in the respective vibration modes described above are merely test examples, and may vary depending on the size and thickness of the diaphragm 12, and are not absolute.

The typical modes of vibration have been described above.
In the case of the semiconductor vibration gyro sensor S1 in the first example, the frequency of the excitation signal is 2019 Hz, and in particular, the form of vibration shown in FIG. 10 is used for measuring the angular velocity. Hereinafter, the operation in this case will be described with reference to FIG. First, the following description is based on the premise that measurement of an angular velocity acting on the Z axis (in the drawing, the front and back sides of the paper) is performed. That is,
In the state shown in FIG. 10, for example, if a rotational force acts on the Z axis (for example, a rotational force acts clockwise in FIG. 14), the angular velocity ω
Is generated. Here, it is assumed that the Z axis passes through substantially the center of the sensor.

By the rotation about the Z axis, the first to fourth weights 10a to 10d are respectively applied to the weights 10a to 10d.
A Coriolis force is generated in a direction orthogonal to the direction in which the vibration occurs (see FIG. 14). That is, when the first weight 10a swings in the direction approaching the fourth weight 10d as shown by the solid line arrow in FIG. 14, that is, in the direction approximately at 9 o'clock and 6 o'clock of the clock, The direction orthogonal to this, that is, 9
Coriolis force acts in a substantially intermediate direction between time and 12:00 (see the dotted arrow in FIG. 14). In addition, the second weight 10
When b bounces in the direction indicated by the solid arrow in FIG. 14, that is, in the direction substantially midway between 12 o'clock and 3 o'clock, the direction perpendicular to this direction, i.e., between 3 o'clock and 6 o'clock, Coriolis force acts in a substantially intermediate direction (FIG. 14).
Dotted arrow).

Further, the third weight 10c is set at 6 o'clock and 9 o'clock on the clock.
In the case of swinging in a substantially middle direction with respect to the hour (see a solid arrow in FIG. 14), a direction orthogonal to this direction, that is, 9:00 and 12:00
The Coriolis force acts in a substantially intermediate direction at the time (see a dotted arrow in FIG. 14). Furthermore, when the fourth weight 10d swings in a substantially intermediate direction between 12:00 and 3:00 of the timepiece (FIG. 1).
4 (see the solid arrow), the Coriolis force acts in a direction perpendicular to this direction, that is, in a substantially intermediate direction between 3 o'clock and 6 o'clock (see the dotted arrow in FIG. 14).

As described above, as a result of the Coriolis force acting on the first to fourth weights 10a to 10d, the diaphragm 12 is displaced by the Coriolis force. That is, when the Coriolis force acts on the first and second weights 10a and 10b as shown by the dotted arrows in FIG. 5, that is, displaced from the back side to the front side. As a result, the capacitance between the portion of the diaphragm 12 and the first angular velocity detection electrode 21 decreases in accordance with the above-described displacement.

On the other hand, the portion of the diaphragm 12 facing the second angular velocity detection electrode 22 is the third and fourth weights 10.
When the Coriolis force acts on c and 10d as shown by the dotted arrow in FIG.
That is, it is displaced from the front surface side to the back surface side of the paper, and the magnitude of the displacement is substantially the same as that of the portion of the diaphragm 12 facing the first angular velocity detection electrode 21. As a result, the capacitance between the portion of the diaphragm 12 and the second angular velocity detection electrode 22 increases in accordance with the displacement. The diaphragm 1 facing the first angular velocity detection electrode 21 described above.
2 and the displacement of the diaphragm 12 facing the second angular velocity detection electrode 22 are the same as those of the diaphragm 1.
Since the moment of the second vibration is at a certain moment, in practice, the state of the displacement changes alternately. That is, as described above, after the portion of the diaphragm 12 facing the first angular velocity detection electrode 21 is displaced in a direction away from the electrode portion 5, it is displaced in a direction approaching the electrode portion 5 at this time. The portion of the diaphragm 12 facing the second angular velocity detection electrode 22 is displaced in a direction away from the electrode unit 5 in the opposite direction.

Here, regarding the capacitance detected by the first angular velocity detection electrode 21, the capacitance when there is no displacement of the diaphragm 12 due to the Coriolis force is represented by C _0, and the capacitance due to the displacement of the diaphragm 12 due to the Coriolis force. If the amount of change in the capacitance is defined as ΔC, the value of the capacitance when the Coriolis force is generated and the capacitance detected by the first angular velocity detection electrode 21 decreases is expressed as C ₀ −ΔC. Is done. Further, regarding the capacitance detected by the second angular velocity detection electrode 22, the diaphragm 1 is driven by Coriolis force.
If the capacitance without displacement is defined as C ₀ and the change in the capacitance due to the displacement of the diaphragm 12 due to the Coriolis force is defined as ΔC, the Coriolis force is generated and the second angular velocity detection electrode is formed. The capacitance value when the capacitance detected by 22 is increased is represented as C ₀ + ΔC.

The first angular velocity detecting electrode 21
Value obtained by the above and the second angular velocity detection electrode 2
2 and the difference from the capacitance value obtained by ２ (C ₀ −ΔC) − (C
The absolute value of ( ₀ + ΔC)｝ is 2ΔC, and its magnitude is in accordance with the magnitude of the angular velocity ω about the Z axis. That is, the angular velocity can be measured by obtaining the absolute value of the difference between the capacitance obtained from the first angular velocity detection electrode 21 and the capacitance obtained from the second angular velocity detection electrode 22.

Next, measurement of acceleration will be described. As a premise, a case will be described in which the acceleration acts in the Z-axis direction, as in the case of the angular velocity measurement described above. For example, assuming that the acceleration acts in the front and back directions in FIG. 14, the diaphragm 12 is displaced from the electrode unit 5 by inertia force, that is, in other words, the diaphragm 12 is displaced from the back surface side to the front surface side in FIG. 14. And the magnitude of the displacement corresponds to the magnitude of the acceleration. As a result, the capacitance formed between the acceleration detection electrode 23 and the portion of the diaphragm 12 facing the same changes. That is, in this case, the capacitance value decreases from the state before the acceleration acts. On the other hand, when the acceleration acts in the opposite direction, the displacement of the diaphragm 12 is also reversed, and the capacitance obtained on the acceleration detection electrode 23 increases on the basis of before the acceleration acts. . Therefore, the direction of the acceleration and the magnitude of the acceleration can be measured by the change in the capacitance obtained at the acceleration detection electrode 23.

Next, a second example will be described with reference to FIG. This second example shows another example of the arrangement of the electrodes in the semiconductor vibrating gyro sensor having the configuration shown in the above-described first example, and has another configuration except for the electrode arrangement described below. Is the same as in the first example described above. Therefore, in the following description, only the electrode arrangement will be described. In addition,
In FIG. 15, illustration of so-called additional components such as the first external connection electrode 24 a and the first connection wiring 25 a as shown in FIG. 4 is omitted. First, in FIG. 15, four squares a, b,
C and D project four vertices of the first to fourth weight support portions 13a to 13d (see FIG. 2) onto the support plate member 4 (see FIG. 2), and each of the four projected vertices. Are connected to each other.

The first drive electrode 19A is located at such a position as to include a portion near two opposing vertexes c1 and c2 of the squares A and D, and the second drive electrode 20A is located at the square B, 1 are disposed so as to include a portion near two opposing vertices c3 and c4 of FIG.
5). Further, the first angular velocity detection electrode 21A is
The second angular velocity detection electrode 22A is located at such a position as to include a portion near the two opposing vertices c5 and c6 of the squares a and b, and the opposing two vertices c7 and c of the squares c and d.
Each of them is disposed at a position that includes a portion near 8 (see FIG. 15).

In particular, the first and second angular velocity detecting electrodes 2
The arrangement of 1A and 22A as described above is based on the vertices c5, c6, c7, c
This is because the portion of the diaphragm 12 (see FIG. 2) corresponding to the vicinity of 8 has the largest displacement and is suitable for detecting a change in capacitance.

In the case of this second example, the first and second
The drive electrodes 19A and 20A and the first and second angular velocity detection electrodes 21A and 22A are all formed in a square shape. Further, the first and second drive electrodes 19A, 2A are provided as described above.
0A and the first and second angular velocity detection electrodes 21A, 2A.
The overall arrangement of 2A is shown in FIG.
Of the driving electrodes 19A and 20A and the first and second angular velocity detecting electrodes 21A and 22A, respectively, suppose that the respective corners occupy just the corners. The drive electrodes 19A and 20A and the first
And the second angular velocity detection electrodes 21A and 22A are arranged.

Further, the cross-shaped acceleration detecting electrode 23A is substantially equal between the first and second driving electrodes 19A and 20A and the first and second angular velocity detecting electrodes 21A and 22A. They are arranged at intervals (see FIG. 15).

The operation of detecting the angular velocity and acceleration in this configuration is the same as that described with reference to FIG. 14 in the first example, so that the detailed description is omitted here. Note that the acceleration detection electrode 23A may be located substantially at the center with respect to the first and second drive electrodes 19A and 20A and the first and second angular velocity detection electrodes 21A and 22A. It need not necessarily be formed in a cross shape as shown. Also, the first
And second drive electrodes 19A, 20A and first and second drive electrodes 19A, 20A.
The angular velocity detection electrodes 21A and 22A of FIG.
The first and second angular velocity detection electrodes 21A and 22A have a portion facing the portion where the displacement of the diaphragm 12 is maximum as described above. It should just be arranged in.

Next, a third example will be described with reference to FIGS.
This will be described with reference to FIG. The point that the semiconductor vibration gyro sensor in the third example has a so-called four-layer structure is as follows.
This is the same as the first example, except that the configuration of the electrode portion 5A in the bottom plate member 6 serving as the fourth layer is different from the first example as described later. The semiconductor vibration gyro sensor in the third example is capable of measuring angular velocity in one axis and acceleration in one axis, whereas the semiconductor vibration gyro sensor in the third example is capable of measuring angular velocity in three axes. It is what it was.

The same components as those shown in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof will be omitted. Hereinafter, different points from the first example will be described. It will be mainly described. The bottom plate member 6 of the semiconductor vibrating gyro sensor S2 in the third example has the same configuration as the semiconductor vibrating gyro sensor S1 in the first example except that the configuration of an electrode portion 5A provided thereon is different. , And is basically the same as the bottom plate member 6 in the first example (see FIGS. 1 to 3 and FIGS. 16 to 18).
In FIG. 16, the illustration of the first to seventh connection points 26a to 26g of the electrode section 5A is omitted.

That is, the electrode portion 5A is
, Two X-axis detection electrodes 31a and 31b, two Y-axis detection electrodes 32a and 32b, and eight Z-axis detection electrodes 33a.
To 33d, 34a to 34d, and first to seventh external connection electrodes 24a to 24g as main components (see FIGS. 18 to 20). The drive electrode 30
It is formed in a substantially square shape, and the first
It is provided at a position substantially opposed to a portion surrounded by the fourth to fourth weights 10a to 10d (see FIGS. 17 to 20).

The first Y-axis detection electrode 32a formed in a rectangular shape is disposed at a position substantially opposed to the portion of the support plate member 4 on which the first weight 10a is disposed. Of Y
The first Z-axis detection electrode 33a for the first weight is located on the left side (FIG. 19) on the right side of the axis detection electrode 32a (on the right side of the paper in FIG. 19).
, The second Z-axis detection electrode 3 for the first weight
4a are provided, and these two Z-axis detection electrodes 33a and 34a are connected to the first Y-axis detection electrode 32a.
(See FIG. 1).
9). Note that in the third example, the first
Y-axis detection electrode 32a and two Z-axis detection electrodes 33a,
The reference numeral 34a is disposed so that its longitudinal axis extends along the X axis (see FIGS. 19 and 20).

The second X-axis detection electrode 31b is connected to the second weight 1
0b is disposed at a position substantially opposite to the portion of the support plate member 4 where the second X-axis detection electrode 31b is disposed (upper side in FIG. 19). The first Z-axis detection electrode 33b for the second weight is disposed on the lower side (the lower side on the paper surface in FIG. 19) of the second X-axis detection electrode 31b. The two Z-axis detection electrodes 33b and 34b are formed to have substantially the same shape and size as the first Y-axis detection electrode 32a (see FIG. 19). The second X-axis detection electrode 31b and the two Z-axis detection electrodes 33b and 34b are
It is arranged so that its longitudinal axis is along the Y-axis direction (see FIGS. 19 and 20).

The second Y-axis detection electrode 32b is connected to the third weight 1
0c is disposed at a position substantially opposed to the portion of the support plate member 4 on which the third weight is provided. The first Z-axis detection electrode 33c is provided on the right side (the right side of the sheet in FIG. 19), and the second Z-axis detection electrode 34c for the third weight is provided on each side. The electrode 32b and the two Z-axis detection electrodes 33c and 34c are formed to have substantially the same shape and size as the first Y-axis detection electrode 32a (see FIG. 19). In the third example, the second Y-axis detection electrode 32b and the two Z-axis detection electrodes 33c and 34c are arranged so that the longitudinal axis direction is along the X-axis (FIG. 19). And FIG. 20).

The first X-axis detection electrode 31a is connected to the fourth weight 1
0d is disposed at a position substantially opposing to the portion of the support plate member 4 on which the fourth X-axis detection electrode 31a is provided (upper side in FIG. 19). And a fourth Z-axis detection electrode 34d for the fourth weight is disposed on the lower side (lower side of the paper surface in FIG. 19) of the first X-axis detection electrode 31a. The two Z-axis detection electrodes 33d and 34d are formed to have substantially the same shape and dimensions as the first Y-axis detection electrode 32a (see FIG. 19). The first X-axis detection electrode 31a and the two Z-axis detection electrodes 33d and 34d are
It is arranged so that its longitudinal axis is along the Y-axis direction (see FIGS. 19 and 20).

On the other hand, the first to seventh external connection electrodes 24
Each of a to 24g is formed in a substantially square shape, and is disposed on a substantially straight line at an appropriate interval at a portion facing the cutout portion 14 of the support plate member 4 (FIGS. 17 to 17). See FIG. 19). Then, the first external connection electrode 24a
, The first Z-axis detection electrode 33a for the first weight, the second
Weight first Z-axis detection electrode 33b, third weight first Z
Axis detection electrode 33c and first Z-axis detection electrode 3 for fourth weight
3d is connected via a first connection wiring 26a appropriately arranged so as to mutually connect them (see FIG. 19).

A first Y-axis detection electrode 32a is connected to the second external connection electrode 24b via a second connection wiring 26b appropriately disposed (see FIG. 19). The third external connection electrode 24c includes a second Z-axis detection electrode 34a for the first weight and a second Z-axis detection electrode 34 for the second weight.
b, a third connection in which the second Z-axis detection electrode 34c for the third weight and the second Z-axis detection electrode 34d for the fourth weight are appropriately arranged so as to mutually connect them. It is connected via the wiring 26c (see FIG. 19).

The drive electrode 30 is connected to the fourth external connection electrode 24d via a fourth connection wiring 26d appropriately disposed (see FIG. 19). The second X-axis detection electrode 31b is connected to the fifth external connection electrode 24e via a fifth connection wiring 26e appropriately disposed (see FIG. 19). The first X-axis detection electrode 31a is connected to the sixth external connection electrode 24f via a sixth connection wiring 26f appropriately disposed (FIG. 19).
reference). A second Y-axis detection electrode 32b is connected to the seventh external connection electrode 24g via an appropriately arranged seventh connection wiring 26g (see FIG. 19).

With such a configuration, the first and second X-axis detection electrodes 31a and 31b, the first and second Y-axis detection electrodes 3
2a, 32b, the first to fourth weight first Z-axis detection electrodes 33a to 33d, the first to fourth weight second Z-axis detection electrodes 34a to 34d, and the diaphragm 12 opposed thereto. A so-called flat plate capacitor is formed between the portions, and in particular, the first to fourth weight first Z-axis detection electrodes 33a to 33d and the portion of the diaphragm 12 facing the first Z-axis detection electrodes 33a to 33d. Are formed in a so-called parallel-connected state. That is, when expressed as an electric circuit, FIG.
As shown in (A), the diaphragm 12 serves as a common electrode, whereas the first to fourth weight first Z-axis detection electrodes 33a to 33d serve as counter electrodes, respectively, and the first to fourth weights. No. 4 first Z-axis detection electrodes 33a to 33
d are connected in parallel with each other to form the first external connection electrode 24.
From a, a combined value of four capacitance values can be obtained.

The first to fourth weight second Z-axis detection electrodes 34a to 34d and the diaphragm 1
Similarly, the plate capacitor formed between the two portions is
It is formed in a so-called parallel connection state. That is, when expressed as an electric circuit, FIG.
The diaphragm 12 becomes a common electrode as shown in FIG.
On the other hand, the first to fourth weight second Z-axis detection electrodes 3
4a to 34d serve as counter electrodes, respectively.
The second Z-axis detection electrodes 34a to 34d for the fourth to fourth weights are connected in parallel with each other, and a combined value of four capacitances is obtained from the third external connection electrode 24c.

Next, the operation of the above configuration will be described. First, a method of driving the semiconductor vibrating gyro sensor S2 and a schematic mode of vibration will be described. First, the drive electrode 30 is appropriately connected as a so-called excitation signal via a fourth external connection electrode 24d. Voltage having an appropriate frequency. Various frequencies can be selected for the frequency of the excitation signal, and a predetermined frequency is selected in consideration of measurement accuracy and the like as described later. In addition, diaphragm 1
The support plate member 4 formed with 2 is connected to a so-called circuit ground and a common circuit ground of a signal generator (not shown) for generating the above-described excitation signal.

The application of the excitation signal causes the drive electrode 30
And the corresponding portion of the diaphragm 12 is acted upon by electrostatic force. As a result, the diaphragm 12 vibrates, and the first to fourth weights 10a to 10d vibrate together with the vibration. The mode of vibration of the first to fourth weights 10a to 10d with respect to the vibration of the diaphragm 12 is basically the same as that described in the first example with reference to FIGS. Since there is no change, the detailed description is omitted.

Next, a more specific diaphragm 12 and first to fourth weights 10a to 10a to 10 according to the frequency of the excitation signal will be described.
A typical vibration mode of d will be described with reference to FIGS. First, FIG. 22 schematically shows a state of vibration when the frequency of the excitation signal is 780 Hz. In this case, the diaphragm 12 has a portion surrounded by the first to fourth weights 10a to 10d ( In FIG. 22, a so-called shaded portion) vibrates in the Z-axis direction. In particular, in the case where the hatched portion in FIG. 22 is displaced from the electrode portion 5A, in other words, when the portion is displaced from the back side to the front side in FIG. 22, the first to fourth weights 10a to 10a 10d swings in the direction indicated by the solid arrow in FIG. When the diaphragm 12 is displaced in the direction approaching the electrode section 5A, the first to fourth weights 10a to 10d swing in the direction opposite to the solid arrow in FIG.

Next, a case where the frequency of the excitation signal is set to 2019 Hz will be described. In this case, in FIG. 23, a hatched portion of the diaphragm 12 (a portion of the diaphragm 12 between the second and third weights 10b and 10c).
Vibrates in the Z-axis direction, and a portion (the first and fourth weights 10) of the diaphragm 12 surrounded by a dotted line in FIG.
a, 10d) is the same as Z
It will vibrate in the axial direction. For example, in FIG. 23, the vibration of the two portions is such that the hatched portion of the diaphragm 12 (the portion of the diaphragm 12 between the second and third weights 10b and 10c) is separated from the electrode portion 5A. In the case of displacement (in other words, displacement from the back side to the front side of the drawing), a portion of the diaphragm 12 surrounded by a dotted line (a portion of the diaphragm 12 between the first and fourth weights 10a and 10d) in FIG. Is in a state of being displaced in a direction approaching the electrode portion 5A (in other words, being displaced from the front side to the back side of the paper).

When the diaphragm 12 is displaced as described above, the first weight 10a and the fourth weight 1
The second weight 10b and the third weight 10c swing in the direction away from each other (see the solid arrow in FIG. 23). Particularly, in this case, the first and fourth weights 10a, 10a
d can be regarded as vibrating as a set of so-called tuning fork vibrators. The second and third weights 10
Similarly, b and 10c can be regarded as vibrating as a set of tuning fork type vibrators.

When the frequency of the excitation signal is 2019 Hz,
There is another form of vibration in addition to the form shown in FIG. 23, and a schematic state thereof is shown in FIG.
The form of this vibration will be described. In this case, when a certain moment of vibration is captured, in FIG.
2 and the portion of the diaphragm 12 between the second weights 10a and 10b is displaced from the back side to the front side in FIG.
4, the third and fourth weights 10c, 1 surrounded by dotted lines
The portion of the diaphragm 12 during 0d is displaced from the front side to the back side of the drawing. Then, the first weight 10a and the second weight 10b swing in a direction away from each other (FIG. 2).
4), the third weight 10c and the fourth weight 1
0d swings in a direction approaching each other (see FIG. 2).
4).

Next, a case where the frequency of the excitation signal is 2388 Hz will be described with reference to FIG. in this case,
Capturing a moment of vibration, as shown in FIG. 25,
The hatched two portions of the diaphragm 12, that is, the portion a surrounded by the second weight 10b, the third weight 10c, and the corner of the support plate member 4, the first weight 10a, 4 is displaced from the back side of the drawing to the front side of the drawing, and at the same time, the diaphragm 1 surrounded by the dotted line in FIG.
2, a portion c surrounded by the first weight 10a, the second weight 10b, and the corner of the support plate member 4,
The portion d surrounded by the third weight 10c, the fourth weight 10d, and the corner of the support plate member 4 is displaced from the front side to the back side of the paper. And the first and second weights 10
a and 10b swing in the direction of the part c (see the solid arrow in FIG. 25), while the third and fourth weights 10c and 10d swing in the direction of the part d (see the solid arrow in FIG. 25). .

Next, a case where the frequency of the excitation signal is 3322 Hz will be described with reference to FIG. in this case,
Capturing the moment of vibration, as shown in FIG. 26,
Around the first weight 10a, the first weight 10
The part e of the diaphragm 12 on the left side of the drawing (the part shaded in FIG. 26) e is displaced from the back side to the front side of the drawing, and at the same time, the part of the diaphragm 12 on the right side of the first weight 10a (FIG. 26). At the site surrounded by a dotted line) f
Is displaced from the front side to the back side of the drawing. Also,
Around the second weight 10b, the second weight 1 in FIG.
The portion g of the diaphragm 12 on the upper side of the drawing (the hatched portion in FIG. 26) g is displaced from the back side of the drawing to the front side, and at the same time, the portion of the diaphragm 12 on the lower side of the drawing of the second weight 10b (see FIG. 26). (A site surrounded by a dotted line)
h is displaced from the front side to the back side of the drawing.

Further, around the third weight 10c, the portion of the diaphragm 12 on the right side of the paper of the third weight 10c in FIG. 26 (the portion shaded in FIG. 26).
i is displaced from the back side to the front side of the drawing, and at the same time, the portion of the diaphragm 12 on the left side of the drawing of the third weight 10c (FIG. 26).
) J is displaced from the front side to the back side of the drawing. Furthermore, the fourth weight 10d
26, the portion k of the diaphragm 12 below the fourth weight 10d in FIG. 26 (the hatched portion in FIG. 26) is displaced from the back side to the front side in FIG. Diaphragm 12 on the upper side of the drawing
(A portion surrounded by a dotted line in FIG. 25) 1 is displaced from the front side to the back side of the drawing. And the first
The weight 10a of the second weight 1
0b is on the lower side of the paper, and the third weight 10c is on the left side of the paper.
The fourth weight 10d swings upward on the paper. The frequency of the excitation signal shown in each of the above-described vibration modes is a test example to the last,
It can vary depending on the size, thickness, etc. of the diaphragm 12, and is not absolute.

The typical modes of vibration have been described above.
In the case of the semiconductor vibration gyro sensor S2 in the third example, when measuring the angular velocity, the vibration state when the frequency of the excitation signal is 780 Hz (see FIG. 22) is used. Hereinafter, the operation in this case will be described with reference to FIGS. First, the case of measuring the angular velocity acting on the Z axis (in the drawing, the front and back sides of the drawing) will be described with reference to FIG.

For example, in a case where an excitation signal having a frequency of 780 Hz or a frequency in the vicinity thereof is applied to the driving electrode 30 and is in the vibration state as described above with reference to FIG. Is assumed to occur, and at a certain moment, the first to fourth weights 10a to 10d are swung in the direction of the solid arrow in FIG. That is,
Referring to FIG. 27, it is assumed that the Z axis passes through substantially the center of the semiconductor vibrating gyro sensor S2, and the first weight 10
a is in the 12 o'clock direction of the watch, the second weight 10b is in the 3 o'clock direction of the watch, the third weight 10c is in the 6 o'clock direction of the watch, and the fourth weight 10d is in the 9 o'clock direction of the watch. When a rotational force acts in the counterclockwise direction about the Z-axis when each swings, Coriolis force orthogonal to the respective swing directions acts on the weights 10a to 10d (FIG. 27). Dotted arrow).

More specifically, the first weight 10a is
In other words, the Coriolis force of the clock at 3 o'clock is the second weight 1
0b also has a Coriolis force in the 6 o'clock direction of the watch,
Similarly, a Coriolis force in the clockwise direction at 9 o'clock acts on the weight 10c, and a Coriolis force at 12 o'clockwise on the clock similarly acts on the fourth weight 10d (see the dotted arrow in FIG. 27). As a result, the diaphragm 1 near the first weight 10a
In 2, the portion facing the first Z-axis detection electrode 33a for the first weight is displaced in the direction approaching the electrode portion 5A, while the portion corresponding to the second Z-axis detection electrode 34a for the first weight is provided. The portion is displaced in a direction away from the electrode portion 5A, and the displacement amounts are substantially the same.

Here, the first and second Z-axis detection electrodes 33a and 34a for the first weight, the first and second Z-axis detection electrodes 33b and 34b for the second weight, and the third and third Z-axis detection electrodes for the third weight are used. 1 and 2nd Z
The axis detection electrodes 33c and 34c, and the first and second Z-axis detection electrodes 33d and 34d for the fourth weight are formed in substantially the same shape and size as described above, and are opposed to the diaphragm 12. Also, in the state without vibration, since they are almost the same,
Each electrode 33 a to 33 d, the electrostatic capacitance value between the 34a~34d and the diaphragm 12 is substantially identical value, if this is referred to as C _0. Then, assuming that a change in the capacitance due to the displacement of the diaphragm 12 due to the Coriolis force as described above is ΔC, the first weight first Z-axis detection electrode 33a when the Coriolis force is generated as described above. The capacitance between the diaphragm 12 is (C ₀ + ΔC), and the capacitance between the first weight second Z-axis detection electrode 34a and the diaphragm 12 is (C ₀ −ΔC). , Respectively.

In the diaphragm 12 near the second weight 10b, a portion facing the first Z-axis detection electrode 33b for the second weight is displaced in a direction approaching the electrode portion 5A,
The portion corresponding to the second Z-axis detection electrode 34b for the second weight is displaced in a direction away from the electrode portion 5A, and the displacement amounts are substantially the same. Therefore, also in this case, the first and second Zs for the first weight are used.
Similarly to the capacitance at the axis detection electrodes 33a and 34a, the capacitance between the first Z-axis detection electrode 33b for the second weight and the diaphragm 12 is (C ₀ + ΔC) and the first capacitance. The capacitance between the weight second Z-axis detection electrode 34a and the diaphragm 12 has a magnitude represented by (C ₀ −ΔC).

In the diaphragm 12 near the third weight 10c, a portion facing the first Z-axis detection electrode 33c for the third weight is displaced in a direction approaching the electrode portion 5A,
The portion corresponding to the second Z-axis detection electrode 34c for the third weight is displaced in a direction away from the electrode portion 5A, and the displacement amounts are substantially the same. Therefore, also in this case, the first and second Zs for the first weight are used.
Similarly to the capacitance at the axis detection electrodes 33a and 34a, the capacitance between the first Z-axis detection electrode 33c for the third weight and the diaphragm 12 is (C ₀ + ΔC) and the third capacitance. The capacitance between the weight second Z-axis detection electrode 34c and the diaphragm 12 has a magnitude represented by (C ₀ −ΔC).

In the diaphragm 12 near the fourth weight 10d, a portion facing the first Z-axis detection electrode 33d for the fourth weight is displaced in a direction approaching the electrode portion 5A,
A portion corresponding to the second Z-axis detection electrode 34d for the fourth weight is displaced in a direction away from the electrode portion 5A, and the displacement amounts are substantially the same. Therefore, also in this case, the first and second Zs for the first weight are used.
Similarly to the capacitance at the axis detection electrodes 33a and 34a, the capacitance between the first Z-axis detection electrode 33d for the fourth weight and the diaphragm 12 is (C ₀ + ΔC) and the fourth capacitance. The capacitance between the second weight Z-axis detection electrode 34d and the diaphragm 12 has a magnitude represented by (C ₀ −ΔC).

As a result, in the first external connection electrode 24a, the first to fourth weight first Z-axis detection electrodes 33 are used.
The sum of the above-mentioned changes in the capacitance in a to 33d appears, that is, a capacitance expressed as 4 (C ₀ + ΔC) is obtained. On the other hand, in the third external connection electrode 24c, the total of the above-described changes in the capacitance of the first to fourth weight second Z-axis detection electrodes 34a to 34d appears, that is, 4 ( C ₀ -ΔC)
Is obtained. Therefore, in an external circuit (not shown), the first external connection electrode 2
4a and the third external connection electrode 24
c by calculating the difference between the obtained capacitance and the obtained capacitance, ｛4 (C
₀ + ΔC) -4 (C ₀ −ΔC)｝ = 8ΔC, the magnitude of which corresponds to the Coriolis force.
In addition, since the angular velocity around the Z axis and the Coriolis force are in a proportional relationship, the relationship between the magnitude of the angular velocity and the magnitude of the difference 8ΔC obtained as described above is checked in advance, so that the magnitude of the difference 8ΔC is obtained. This makes it possible to measure the angular velocity.

The first to fourth weights 10a to 10d
27 also swings in the direction opposite to the solid arrow in FIG. 27 due to the vibration of the diaphragm 12, and in this case, the direction of the Coriolis force is also opposite to the direction indicated by the dotted arrow in FIG. For this reason, the first external connection electrode 24a
The changes in the capacitances of the first and third external connection electrodes 24c are also opposite to the above, but the difference between them is 8Δ
It is still C.

Next, measurement of the angular velocity when a rotational force acts on the X axis will be described with reference to FIG. It is assumed that the excitation signal is the same as in the case of the Z axis.
For example, in FIG. 28, it is assumed that the X axis passes through the approximate center of the sensor, and for example, the rotational force about the X axis in the clockwise direction when the X axis is viewed in the direction of the arrow shown in FIG. Acts, and at this time, the first to fourth weights 10a to 10d
However, as shown in FIG. 28, if each of them sways outward, the Coriolis force is reduced by the second and fourth weights 10b, 10b.
d. That is, in the second weight 10b, the Coriolis force acts so that the portion of the diaphragm 12 where the second weight 10b is located approaches the electrode portion 5A from the front side to the rear side in FIG. On the other hand, in the fourth weight 10d, FIG.
In this case, the portion of the diaphragm 12 where the fourth weight 10d is located is the electrode portion 5
A is applied so as to move away from the diaphragm A (see FIG. 28).
Will occur.

As a result, assuming that the capacitances of the first and second X-axis detecting electrodes 31a and 31b before the Coriolis force is generated are C ₀ and the capacitance change due to the displacement of the diaphragm 12 is ΔC. The sixth external connection electrode 24f to which the first X-axis detection electrode 31a is connected has (C ₀ −
(C) + (C ₀ + Δ)
The capacitance C) is obtained respectively. Therefore, as in the case of measuring the angular velocity with respect to the Z axis, the magnitude of the angular velocity can be known by obtaining the difference between these two capacities (2ΔC). As described in the measurement of the X axis, when the first to fourth weights 10a to 10d swing in the opposite directions as indicated by the solid arrows in FIG. However, the difference in capacitance change between the fifth and sixth external connection electrodes 24e and 24f is still (2ΔC).

Next, the measurement of the angular velocity when a rotational force acts on the Y axis will be described with reference to FIG. It is assumed that the excitation signal is the same as in the case of the Z axis.
For example, in FIG. 29, it is assumed that the Y axis passes through the approximate center of the sensor, and when the Y axis is viewed in the direction of the arrow in FIG.
Assuming that the first to fourth weights 10a to 10d swing outward as shown in FIG. 29, the Coriolis force acts on the first and third weights 10a and 10c, respectively. That is, in the first weight 10a,
In FIG. 29, from the front side of the paper to the back side, in other words,
While Coriolis force acts so that the portion of the diaphragm 12 where the first weight 10a is located approaches the electrode portion 5A,
In the third weight 10c, a Coriolis force acts so that the portion of the diaphragm 12 where the third weight 10c is located is separated from the electrode portion 5A from the back side to the front side in FIG. 29 in FIG. (See FIG. 29), and substantially the same displacement of the diaphragm 12 occurs.

The displacement in this case is basically the same as that of FIG. 28, although the position is different. Therefore, in this case, the second and seventh external connection electrodes 24
At b and 24g, the angular velocity can be obtained as in the case of FIG. 28, based on the difference between the obtained capacitances. Note that, in this case, as described in the measurement of the X axis, even if the swing of the first to fourth weights 10a to 10d swings in the direction opposite to the direction indicated by the solid arrow in FIG. The absolute value of the difference between the capacitance obtained on the second external connection electrode 24b and the capacitance obtained on the seventh external connection electrode 24g remains (2ΔC).

Next, a fourth example will be described with reference to FIG. The fourth example shows another example of the arrangement of the electrodes in the semiconductor vibrating gyro sensor having the configuration shown in the third example described above, and has another configuration except for the electrode arrangement described below. Is the same as in the third example described above. Therefore, in the following description, only the electrode arrangement will be described. In addition,
In FIG. 30, illustration of so-called additional components such as the first external connection electrode 24a and the first connection wiring 26a shown in FIG. 19 is omitted. First,
In FIG. 30, four squares E, F,
The four vertices of the first to fourth weight supporting portions 13a to 13d (see FIG. 17) are respectively
(See FIG. 17), and is a virtual one formed by connecting four projected vertices to each other.

In the fourth example, basically, first, FIG.
9 and the electrode arrangement shown in FIG.
As described below, the first X-axis detection electrode 3 centered on 0 '
1a 'and the like are arranged. That is, first, the first Y-axis detection electrode 32a 'formed in a rectangular shape
Is disposed so as to be located substantially at the center of the square E, and a first Z-axis detection electrode 33a 'for the first weight is provided on the right side thereof, and a second Z-axis detection electrode 33a for the first weight is provided on the left side thereof. The axis detection electrodes 34a 'are provided respectively (see FIG. 30). Then, the first Z-axis detection electrode 33a 'for the first weight and the second Z-axis detection electrode
The axis detection electrode 34a 'is arranged so that a part of its side is located inside the square e, and the first Y-axis detection electrode 3a'
It is arranged with a predetermined gap from 2a '(see FIG. 30).

As described above, in particular, the first Z for the first weight is used.
A part of the side portions of the axis detection electrode 33a 'and the first weight second Z-axis detection electrode 34a' is located inside the square e because of the vibration described with reference to FIG. In the embodiment, the first Z-axis detection electrode 33a 'for the first weight and the second Z-axis detection electrode 34a' for the first weight are located in the vicinity of the inner side of the square e where a part of the side is located. This is because the part reaching the outer part is the part where the displacement is the largest and is suitable for detecting a change in capacitance.

Further, the first Z-axis detection electrode 3 for the first weight
3a 'is formed in a rectangular shape, and one corner thereof, that is, the second Z-axis detection electrode 34b' for the adjacent second weight is formed.
Side corners are cut out, and the first
Similarly, the second Z-axis detection electrode 34a 'for weight has a shape in which the corner on the side of the first Z-axis detection electrode 33d' for fourth weight is cut out (see FIG. 30).

Next, the second X-axis detection electrode 31b '
Weight first Z-axis detection electrode 33b 'and second weight second
The arrangement of the Z-axis detection 34b 'is basically the same as that described above, and will be generally described here. In other words, the second formed in a rectangular shape
X-axis detection electrode 31b 'is disposed so as to be located substantially at the center of the square, and on the left and right thereof, the first Z-axis detection electrode 33b' for the second weight and the second Z axis detection 34
b 'are provided (see FIG. 30). Further, the first Z-axis detection electrode 33b 'for the second weight and the second Z-axis detection 34b' for the second weight both have shapes in which one corner of a rectangle is cut out. The first Z-axis detection electrode 33b 'for the second weight has a corner on the side of the first Z-axis detection electrode 33a' for the first weight, and the second Z-axis detection electrode 34b for the second weight. ′, The corners on the side of the third weight second Z-axis detection electrode 34c ′ are respectively cut out (see FIG. 30).

The second Z-axis detection electrode 33b 'for the second weight and the second Z-axis detection electrode 33b' for the second weight
The relative positional relationship of b 'is basically the same as the case of the first Z-axis detection electrode 33a' for the first weight and the second Z-axis detection electrode 34a 'for the first weight described above. Such an arrangement is basically for the same reason.

The second Y-axis detection electrode 32b ', the third Z-axis detection electrode 33c' for the third weight, and the second Z-axis detection electrode 34c 'for the third weight are basically the same as described above. In general, the second Y-axis detection electrode 32b 'formed in a rectangular shape is disposed so as to be located substantially at the center of the square (see FIG. 1). See FIG. 30). Then, the first Z-axis detection electrode 33c 'for the third weight is provided.
The second Z-axis detection electrode 34c 'for the third weight is disposed on the left and right sides thereof (see FIG. 30). The first Z-axis detection electrode 33c 'for the third weight and the third
The second Z-axis detection electrode 34c 'for weight is formed in a rectangular shape, and the first Z-axis detection electrode 33 for third weight
c ′ is the corner on the side of the fourth weight second Z-axis detection electrode 34d ′, and the third weight second Z-axis detection electrode 34c ′ is the second Z-axis detection electrode 34c ′.
The corners on the side of the first Z-axis detection electrode 33b 'for the weight are cut out (see FIG. 30).

The first Z-axis detection electrode 33c 'for the third weight and the third Z-axis detection 34 for the third weight
The relative positional relationship of c 'is basically the same as that of the first weight first Z-axis detection electrode 33a' and the first weight second Z-axis detection electrode 34a '. Such an arrangement is basically for the same reason.

The first X-axis detection electrode 31a ', the fourth
Weight first Z-axis detection electrode 33d 'and fourth weight second
This is basically the same as described above for the Z-axis detection electrode 34d '. To be more specific, first, the first X-axis detection electrode 31a' formed in a rectangular shape will be described below.
It is arranged so as to be located substantially at the center of the square (see FIG. 30). Then, the first Z-axis detection electrode 3 for the fourth weight
3d 'and the fourth Z-axis detection electrode 34d' for the fourth weight are:
It is arranged on each of the left and right sides (Fig. 3
0). The first Z-axis detection electrode 33d 'for the fourth weight and the second Z-axis detection electrode 34d' for the fourth weight are both formed in a rectangular shape, and further, the first Z-axis for the fourth weight. The detection electrode 33d 'has a corner on the second Z-axis detection electrode 34a' side for the first weight, and the second Z-axis detection electrode 34d 'for the fourth weight has
The corners on the side of the first Z-axis detection electrode 33c 'for the third weight are cut out (see FIG. 30).

Then, the square Z and the first Z-axis detecting electrode 33d 'for the fourth weight and the second Z-axis detecting electrode 34 for the fourth weight are formed.
The relative positional relationship of d 'is basically the same as the case of the first weight first Z-axis detection electrode 33a' and the first weight second Z-axis detection electrode 34a '. Such an arrangement is basically for the same reason.

The operation of detecting the angular velocity and the acceleration in this configuration is the same as that described in the third example with reference to FIGS. 27 to 29, so that the detailed description is omitted here. . The shape of each electrode described above is merely an example, and it is needless to say that the shape is not limited to this. In particular, the first to fourth weight first Z-axis detection electrodes 33a 'to 33d' and the first to fourth weight second Z-axis detection electrodes 34a 'to 34d' are formed by the diaphragm as described above. 12 (see FIG. 17) may be disposed at a position facing the position where the displacement becomes maximum.
The shape is not limited to that shown in FIG.

[0091]

As described above, according to the first to third aspects of the present invention, the weight provided on the diaphragm includes:
By adopting a configuration in which the Coriolis force due to the angular velocity acts and the displacement of the diaphragm due to the Coriolis force can be detected as a change in capacitance, the change in capacitance is in accordance with the angular velocity, By using the change in capacitance, power consumption is low, and
A semiconductor vibrating gyroscope capable of measuring an angular velocity that can be mass-produced by a semiconductor manufacturing technique can be provided. In particular, according to the second and third aspects of the present invention, it is possible to provide a semiconductor vibrating gyroscope capable of measuring acceleration in addition to the above effects.

According to the present invention, Coriolis forces corresponding to the angular velocities around each of the three orthogonal axes act on the weight provided on the diaphragm. By adopting a configuration in which the displacement of the diaphragm can be detected as a change in capacitance, the change in capacitance is in accordance with the angular velocity, so that angular velocities in a plurality of axes can be measured, and power consumption is reduced. It is possible to provide a semiconductor vibrating gyro sensor that requires a small amount and can be mass-produced by a semiconductor manufacturing technique.
In addition, since a single sensor can measure angular velocities in a plurality of axes, it is possible to reduce the installation space unlike the related art, and to contribute to miniaturization of various devices using the sensor. It has the effect of being able to do so.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a central longitudinal section of a semiconductor vibration gyro sensor according to a first example of an embodiment of the present invention, and the semiconductor vibration gyro sensor is taken along line AA shown in FIG. It is sectional drawing in the case of cutting | disconnecting vertically.

FIG. 2 is an overall perspective view of a support plate member and a weight portion of the semiconductor vibration gyro sensor in the first example.

FIG. 3 is an overall perspective view of a bottom plate member and an electrode portion of the semiconductor vibration gyro sensor in the first example.

FIG. 4 is a plan view of an electrode portion of the semiconductor vibration gyro sensor in the first example.

FIG. 5 is a plan view showing a relative positional relationship between an electrode portion of the semiconductor vibrating gyro sensor and first to fourth weights in the first example.

FIG. 6 is a schematic diagram schematically showing the movement of the weight when the center of the diaphragm is displaced toward the electrode unit.

FIG. 7 is a schematic diagram schematically showing the manner of movement of the weight when the center of the diaphragm is displaced away from the electrode unit side.

FIG. 8 is a schematic diagram schematically showing the movement of the weight when the center of the diaphragm vibrates with respect to the electrode portion.

9 is a plan view schematically showing movements of a diaphragm and a weight in an XY plane when an excitation signal frequency is set to 780 Hz in the semiconductor vibrating gyro sensor shown in FIG.

FIG. 10 is a plan view schematically showing movements of a diaphragm and a weight in an XY plane when an excitation signal frequency of a semiconductor vibration gyro sensor in the first example is set to 2019 Hz.

FIG. 11 is a plan view schematically showing another example of the movement of the diaphragm and the weight on the XY plane when the excitation signal frequency of the semiconductor vibration gyro sensor in the first example is set to 2019 Hz.

FIG. 12 is a plan view schematically showing movements of a diaphragm and a weight in an XY plane when an excitation signal frequency of a semiconductor vibration gyro sensor in the first example is 2388 Hz.

FIG. 13 is a plan view schematically showing movements of a diaphragm and a weight in an XY plane when an excitation signal frequency of a semiconductor vibration gyro sensor in the first example is 3322 Hz.

FIG. 14 is a plan view schematically showing the movement of the weight in the XY plane when an excitation signal is applied to the semiconductor vibrating gyro sensor in the first example and a rotational force about the Z axis acts.

FIG. 15 is a plan view showing an arrangement example of electrodes of a semiconductor vibrating gyro sensor according to a second example of the embodiment of the present invention.

FIG. 16 is a sectional view showing a central longitudinal section of the semiconductor vibrating gyroscope according to the third example of the embodiment of the present invention, and is taken along line BB shown in FIG. 19; It is sectional drawing when the semiconductor vibration gyro sensor is cut | disconnected.

FIG. 17 is an overall perspective view of a support plate member and a weight portion constituting a semiconductor vibration gyro sensor according to a third example.

FIG. 18 is an overall perspective view of a bottom plate member and an electrode section of a semiconductor vibration gyro sensor according to a third example.

FIG. 19 is a plan view of an electrode portion of a semiconductor vibration gyro sensor according to a third example.

FIG. 20 is a plan view showing a relative positional relationship between an electrode section of a semiconductor vibrating gyro sensor and first to fourth weights in a third example.

FIG. 21 shows the capacitance between the first to fourth weight first Z-axis detection electrodes and the diaphragm and the capacitance between the first to fourth weight second Z-axis detection electrodes and the diaphragm. FIG. 21A is a circuit diagram showing an electrical equivalent circuit based on capacitance, and FIG.
FIG. 21B shows an equivalent circuit based on the capacitance between the first to fourth weight first Z-axis detection electrodes and the diaphragm.
3 is a circuit diagram showing an equivalent circuit based on capacitance between the first to fourth weight second Z-axis detection electrodes and the diaphragm, respectively.

FIG. 22 is a plan view schematically showing movements of a diaphragm and a weight in an XY plane when an excitation signal frequency of a semiconductor vibration gyro sensor in a third example is set to 780 Hz.

FIG. 23 is a plan view schematically showing movements of a diaphragm and a weight in an XY plane when an excitation signal frequency of a semiconductor vibration gyro sensor in the third example is set to 2019 Hz.

FIG. 24 is a plan view schematically showing another example of the movement of the diaphragm and the weight on the XY plane when the excitation signal frequency of the semiconductor vibration gyro sensor in the third example is set to 2019 Hz.

FIG. 25 is a plan view schematically showing movements of a diaphragm and a weight in an XY plane when an excitation signal frequency of a semiconductor vibration gyro sensor in a third example is 2388 Hz.

FIG. 26 is a plan view schematically showing movements of a diaphragm and a weight in an XY plane when an excitation signal frequency of a semiconductor vibration gyro sensor in a third example is 3322 Hz.

FIG. 27 is a plan view schematically showing the movement of a weight in the XY plane when an excitation signal is applied to the semiconductor vibrating gyro sensor in the third example and a rotational force about the Z axis acts.

FIG. 28 is a plan view schematically showing the movement of the weight in the XY plane when an excitation signal is applied to the semiconductor vibrating gyro sensor in the third example and a rotational force about the X axis acts.

FIG. 29 is a plan view schematically showing the movement of a weight in the XY plane when an excitation signal is applied to the semiconductor vibrating gyro sensor in the third example and a rotational force about the Y axis acts.

FIG. 30 is a plan view showing an arrangement example of electrodes of a semiconductor vibrating gyro sensor according to a fourth example of an embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Top plate member 2 ... Frame body 3 ... Weight part 4 ... Support plate member 5 ... Electrode part (first example) 5A ... Electrode part (third example) 6 ... Bottom plate member 10a ... First weight 10b ... Second weight 10c Third weight 10d Fourth weight 12 Diaphragm 16 Stopper 19 First drive electrode 20 Second drive electrode 21 First detection electrode for angular velocity 22 Second Angular velocity detection electrode 23 Acceleration detection electrode 30 Drive electrode 31a First X-axis detection electrode 31b Second X-axis detection electrode 32a First Y-axis detection electrode 32b Second Y-axis detection electrode 33a ... first Z-axis detection electrode for first weight 33b ... second Z-axis detection electrode for first weight 33c ... third Z-axis detection electrode for first weight 33d ... fourth for first weight The Z-axis detection electrode 34a of the first Z-axis detection electrode for the second weight 34b The second Z-axis detection electrode of the second weight 4c ... third Z-axis sensing electrodes 34d ... fourth Z axis detection electrode a second weight for the second weight

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Kai Not Meyer 3-13-26 Yayumicho, Higashimatsuyama-shi, Saitama Pref.

Claims (6)

[Claims] 1. A diaphragm formed from a semiconductor member, two drive electrodes provided to face the diaphragm and applied with a predetermined excitation signal, respectively; and a drive electrode provided to face the diaphragm; Two angular velocity detecting electrodes for detecting a capacitance between the two electrodes, and four electrodes provided on a surface of the diaphragm opposite to a surface facing the two driving electrodes and the two angular velocity detecting electrodes. A direction orthogonal to a direction in which the diaphragm faces the two drive electrodes and the two angular velocity detection electrodes in a state where an excitation signal is applied to each of the two drive electrodes. Based on a change in capacitance obtained between the two angular velocity detection electrodes and the diaphragm when a rotational force acts on an axis along the axis. The semiconductor vibration gyro sensor, characterized in that the speed was measurable. 2. An acceleration detecting electrode formed of a conductive member for detecting acceleration formed in a rectangular shape, and a conductive member formed and arranged such that one side of the acceleration detecting electrode is opposed to one side of the acceleration detecting electrode via a gap. A first drive electrode to which a first predetermined excitation signal is applied, and a side opposed to a side opposite to a side of the acceleration detection electrode opposed to the first drive electrode with a gap therebetween. A second drive electrode formed and disposed by a conductive member, to which a second predetermined excitation signal is applied, and a second side facing the other two sides of the acceleration detection electrode with a gap therebetween. A first conductive member provided
An electrode part comprising: a second angular velocity detection electrode; a diaphragm made of a semiconductor member provided so as to face the electrode part; and a plane opposite to a surface of the diaphragm facing the electrode part. And a first to a fourth weight provided on the diaphragm, wherein the first to the fourth weight surround a portion of the diaphragm facing the acceleration detection electrode, and the first weight is A portion of the diaphragm facing across the first drive electrode and the first angular velocity detection electrode,
The second weight is provided at a portion of the diaphragm facing the first angular velocity detection electrode and the second drive electrode, and the third weight is provided at the second drive electrode. At a portion of the diaphragm facing the second angular velocity detection electrode, the fourth weight is arranged to face the second angular velocity detection electrode and the first drive electrode. A direction orthogonal to a facing direction of the diaphragm and the electrode portion in a state where an excitation signal is applied to the first and second drive electrodes, respectively. That the angular velocity can be measured based on a change in capacitance obtained between the first and second detection electrodes for angular velocity and the diaphragm when a rotational force acts on an axis along the axis. Characteristic semiconductor Body vibration gyro sensor. 3. The semiconductor vibrating gyroscope according to claim 1, wherein the two excitation signals are sinusoidal signals or repetitive pulse signals having the same frequency and a phase difference of about 180 degrees. Sensor. 4. A diaphragm formed from a semiconductor member, a drive electrode provided opposite to the diaphragm and to which a predetermined excitation signal is applied, and a diaphragm provided at a predetermined interval around the drive electrode. A set of X-axis detection electrodes disposed so as to be opposed to a direction perpendicular to a direction in which the set of X-axis detection electrodes are disposed at predetermined intervals around the drive electrodes A set of Y-axis detection electrodes disposed so as to face the diaphragm, and a pair of X-axis detection electrodes and a pair of Y-axis detection electrodes, each of which is disposed beside one of the electrodes. Four first Z
An axis detection electrode, and a pair of X-axis detection electrodes and a pair of Y-axis detection electrodes, each of which is arranged on a side of the electrode opposite to the first Z-axis detection electrode. Four second Zs provided
An axis detection electrode, the drive electrode of the diaphragm, the set of X-axis detection electrodes, the set of Y-axis detection electrodes, the four first Z-axis detection electrodes, and the four second Z-axis detections And four weights disposed on a surface opposite to a surface facing the electrodes, wherein the set of Y-axis detection electrodes is disposed in a state where an excitation signal is applied to the drive electrodes. First along the given direction
Of the angular velocity acting about the first axis based on the amount of change in capacitance between the pair of X-axis detection electrodes and the diaphragm when a rotational force about the axis acts. Measurement, and a second direction along a direction in which the set of X-axis detection electrodes is disposed.
When a rotational force about the axis acts on the second axis, the angular velocity acting on the second axis is determined based on the amount of change in capacitance between the pair of Y-axis detection electrodes and the diaphragm. Third measurement along a direction perpendicular to a plane including the diaphragm to enable measurement
When a rotational force is applied about the axis of?, The capacitance between the diaphragm and the four first Z-axis detection electrodes, the capacitance between the diaphragm and the four second Z-axis detection electrodes, Based on the amount of change in capacitance between
A semiconductor vibrating gyro sensor characterized in that it is capable of measuring an angular velocity acting around an axis. 5. The four weights are provided at respective positions corresponding to respective portions of the diaphragm facing the set of X-axis detection electrodes, and at the respective positions of the diaphragm facing the set of Y-axis detection electrodes. 5. The semiconductor vibrating gyro sensor according to claim 4, wherein the semiconductor vibrating gyro sensor is provided at each of the corresponding positions. 6. The excitation signal is a sine wave signal or a repetitive pulse signal, and the frequency of the excitation signal is four when a portion of the diaphragm surrounded by four weights is displaced in a direction away from the drive electrode. 6. The semiconductor vibrating gyro sensor according to claim 5, wherein the weight is generated when deflections in four directions occur.