JPH11163204A - Semiconductor device and mounting structure thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable a semiconductor device provided with outer connection electrodes, enhanced in density and its mounting structure to be lessened in size and to be possessed of a large number of pins. SOLUTION: A semiconductor device is equipped with a semiconductor chip 11, a resin package 12 which encapsulates the semiconductor chip 11, resin projections 17 provided to the side of the resin package 12 which protrudes toward a mounting board, metal films 13 each provided covering the projections 17, and metal wires 18 which connect the electrode pads 14 with the metal films 13. In this case, a connecting pad 19A is provided to the metal film 13 extending nearly in a horizontal direction, and the wire 18 is connected to the connection pad 19A.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a mounting structure thereof, and more particularly to a semiconductor device having a high-density external connection electrode and a mounting structure thereof. 2. Description of the Related Art In recent years, in the electronic device market, a semiconductor device having a small mounting area when mounted on a substrate has been desired in order to realize downsizing of the electronic device. Also, in terms of the electrode pitch and the external connection terminal pitch, a semiconductor device which is technically easy to mount is desired.

[0002]

2. Description of the Related Art FIGS. 26 and 27 are cross-sectional views of a conventional resin-sealed semiconductor device. In FIG. 26, 1
Denotes a resin, 2 denotes a semiconductor element, 3 denotes an outer lead, 4 denotes a bonding wire, and 5 denotes a die pad. This semiconductor device has a package structure called SSOP (Shrink Small Outline Package), and is configured such that the outer leads 3 are bent in a gull wing shape and mounted on a substrate.

In FIG. 27, 1 is a resin, 2 is a semiconductor element, 4 is a bonding wire, 6 is a solder ball,
Reference numeral 7 denotes a mounting board on which the chip 2 is mounted. This semiconductor device has a package structure called a BGA (Ball Grid Array), and a terminal portion mounted on a substrate is formed by solder balls 6. However, FIG.
In the SSOP type semiconductor device shown in FIG. 6, the area of the routing portion 9 in the resin 1 from the inner lead 8 to the outer lead 3 and the area occupied by the outer lead 3 itself are large, and the mounting area becomes large. There was a point. Further, in the BGA type semiconductor device shown in FIG. 27, there is a problem that the use of the mounting substrate 7 increases the cost.

Therefore, the applicant has previously proposed Japanese Patent Application Laid-Open No. Hei 9-162348 as a semiconductor device which can solve the above-mentioned problems. FIG. 28 shows a semiconductor device 110 according to the above application.
Is shown. As shown in FIG.
Numeral 0 denotes a very simple configuration including the semiconductor element 111, the resin package 112, the metal film 113, and the like. The resin protrusion 117 integrally formed on the mounting surface 116 of the resin package 112 is coated with the metal film 113. At the same time, the metal film 113 and the semiconductor element 111 are connected by a wire 118.

[0005] The semiconductor device 110 having the above structure does not require the inner lead and the outer lead as in the conventional SSOP, and does not require the area for routing from the inner lead to the outer lead or the area of the outer lead itself. Thus, the size of the semiconductor device 110 can be reduced. Further, since it is not necessary to use a mounting substrate for forming a solder ball like a conventional BGA, the cost of the semiconductor device 110 can be reduced. Further, the resin protrusion 117 and the metal film 113 cooperate to perform the same function as the solder bump of the BGA type semiconductor device, so that the mountability can be improved.

[0006]

As described above, the semiconductor device 110 can realize various effects which cannot be obtained by the conventional semiconductor device shown in FIGS. 26 and 27. However, the semiconductor device 110 has the wire 11
Since the metal film 8 is configured to be wire-bonded to the bottom surface of the metal film 113, the metal film 113 needs a predetermined area sufficient for performing wire bonding (hereinafter, referred to as a required bonding area). Therefore, the conventional semiconductor device 1
In No. 10, there is a problem that the size of the metal film 113 cannot be made smaller than the required bonding area.

As described above, when the size of the metal film 113 is regulated due to the wire bonding process, the size of the resin package 112 is reduced even if the density of the semiconductor element 11 and the number of pins are increased. The size cannot be reduced, and the size of the semiconductor device 110 cannot be reduced. Further, in a configuration in which the wire 118 is directly connected to the metal film 113 as in the related art, the disposition position of the metal film 113 is limited within the range in which the wire bonding process can be performed, and thus the metal film 113 is formed at a desired position. There is also a problem that it is not possible.

The present invention has been made in view of the above points, and has as its object to provide a semiconductor device which can be reduced in size and increase in the number of pins, and a mounting structure thereof.

[0009]

The above objects can be attained by taking the following means. Claim 1
In the described invention, the semiconductor element, a resin package for sealing the semiconductor element, a resin protrusion protrudingly formed on a mounting side surface of the resin package, a plurality of metal films disposed on the resin protrusion, In a semiconductor device comprising an electrode pad on a semiconductor element and a connection member for electrically connecting the metal film, a connection pad extending in a substantially horizontal direction is formed on the metal film. The connection member is connected to a pad.

Further, according to the present invention, a semiconductor device, a resin package for encapsulating the semiconductor device, a resin protrusion protruding from a mounting side surface of the resin package,
A semiconductor device, comprising: a plurality of metal films provided on the resin protrusion; and a connection member for electrically connecting an electrode pad on the semiconductor element and the metal film. A flange-shaped connection pad is formed, and the connection member is connected to the connection pad.

According to a third aspect of the present invention, in the semiconductor device according to the first or second aspect, the shape of the resin projection is a column or a conical shape with a sharp tip. . According to a fourth aspect of the present invention, in the semiconductor device according to any one of the first to third aspects, a relay pad to which the connection member is connected, and a wiring connecting the relay pad and the metal film are provided. And an anchor portion formed on the wiring and engaged with the resin package.

According to a fifth aspect of the present invention, in the semiconductor device according to any one of the first to fourth aspects, an uneven portion is formed on a surface of the resin package on which the metal film is formed. It is a feature. According to a sixth aspect of the present invention, in the semiconductor device according to any one of the first to fifth aspects, a relay pad to which the connection member is connected and an element facing element provided at a position facing the semiconductor element. An element-facing metal film formed on the resin protrusion;
A wire for connecting the relay pad and the element-facing metal film is provided.

According to a seventh aspect of the present invention, in the semiconductor device according to any one of the first to sixth aspects, the arrangement pitch of the metal film and the arrangement pitch of the electrode pads on the semiconductor element are different from each other. It is characterized by being substantially the same. According to an eighth aspect of the present invention, in the semiconductor device according to any one of the first to seventh aspects, the connection member is a wire.

According to a ninth aspect of the present invention, in the semiconductor device according to any one of the first to seventh aspects, the connection member is a protruding electrode, and the semiconductor element is face-down bonded to the connection pad. It is characterized by becoming. According to a tenth aspect of the present invention, in the semiconductor device according to any one of the first to ninth aspects, an underfill resin made of a thermoplastic resin is disposed on a surface of the resin package on which the metal film is formed. It is characterized by having been provided.

According to an eleventh aspect of the present invention, in the semiconductor device mounting structure for mounting the semiconductor device according to any one of the first to ninth aspects on a mounting substrate, the semiconductor device and the mounting substrate may be connected to each other. And a thermosetting underfill resin.

According to a twelfth aspect of the present invention, in the semiconductor device mounting structure for mounting the semiconductor device according to any one of the first to ninth aspects on a mounting substrate, the semiconductor device and the mounting substrate may be disposed between the semiconductor device and the mounting substrate. A thermoplastic underfill resin.

Each of the above means operates as follows.
According to the first and second aspects of the invention, the metal film provided on the resin protrusion is provided with a connection pad extending in a substantially horizontal direction or formed in a metal film with a flange shape. Since the semiconductor element and the metal film are electrically connected to each other by connecting the connection member to the connection member, the connection member is connected to the connection pad instead of the bottom surface of the metal film. Can be planned. Thereby, the pitch between adjacent metal films can be reduced, and the metal films can be arranged at high density in the resin package.

Further, since the connection pads are locked to the resin package, even if the metal film is reduced in area, the connection pads generate an anchor effect on the resin package. Separation can be prevented. According to the third aspect of the present invention, the resin protrusion can be effectively reduced in area by forming the shape of the resin protrusion into a columnar shape or a conical shape with a sharp tip.

According to the fourth aspect of the present invention, the relay pad and the wiring are interposed between the semiconductor element and the metal film. The degree of freedom can be given to the electrical connection path from the element to the metal film. This allows
The metal film can be arranged at an arbitrary position, so that the semiconductor device can be downsized by efficiently arranging the metal film.

Further, since the wiring is provided with an anchor portion which engages with the resin package, the wiring can be prevented from being detached from the resin package, and the reliability of the semiconductor device can be improved. According to the fifth aspect of the present invention, the unevenness portion is formed on the surface of the resin package on which the metal film is formed, so that when the semiconductor device is mounted on the mounting board using the underfill resin, the unevenness portion is formed. Since it penetrates into the underfill resin, the bonding strength between the semiconductor device and the underfill resin can be increased.

For this reason, when the semiconductor device is unavoidably replaced from the mounting substrate due to, for example, a defect of the semiconductor element, the underfill resin is maintained in a state of being bonded to the semiconductor device side as the semiconductor device is removed from the mounting substrate. Therefore, since no underfill resin remains on the mounting substrate side, mounting processing of a new semiconductor device can be easily performed.

According to the present invention, the metal film (including the metal film opposed to the element) is formed in the matrix by providing the element opposed metal film at a position facing the semiconductor element, that is, at a position below the semiconductor element. It can be arranged in a shape. Further, even if an element-facing metal film is provided below the semiconductor element, the element-facing metal film is connected to the semiconductor element via the wire and the relay pad. Therefore, the metal films can be arranged at a high density, and the pitch between the metal films can be reduced accordingly, so that the size of the semiconductor device can be reduced and the number of pins can be increased.

According to the seventh aspect of the present invention, the arrangement pitch of the metal film and the arrangement pitch of the electrode pads on the semiconductor element are made substantially the same. Flip-chip mounting becomes possible. Therefore, the wiring length between the semiconductor element and the mounting board can be reduced, and the electrical characteristics can be improved.

According to the eighth aspect of the present invention, since the connection member is a wire, the semiconductor element and the connection pad or the semiconductor element and the relay pad can be connected using a known wire bonding technique. Connection processing can be easily performed. According to the ninth aspect of the present invention, the connection member is formed as a protruding electrode, and the semiconductor element is face-down bonded to the connection pad, thereby improving the electrical characteristics between the semiconductor element and the connection pad. be able to.

According to the tenth and twelfth aspects of the present invention, since the underfill resin is provided with the thermosetting underfill resin, the thermosetting resin is plasticized by raising the temperature. Therefore, rework of the semiconductor device after mounting can be facilitated. Further, according to the invention of claim 11, since the thermosetting underfill resin is interposed between the semiconductor device according to any one of claims 1 to 9 and the mounting substrate, the metal film is formed. Even if the area is reduced and the density is high, the semiconductor device and the mounting substrate can be reliably bonded by the bonding force of the underfill resin.

[0026]

Embodiments of the present invention will now be described with reference to the drawings. 1 to 3 show a semiconductor device 10A according to a first embodiment of the present invention and a mounting structure thereof. 1 shows a cross section of the semiconductor device 10A, FIG. 2 shows a bottom surface of the semiconductor device 10A, and FIG. 3 shows a metal film 13 described later.

The semiconductor device 10A has a very simple structure comprising a semiconductor element 11, a resin package 12, and a metal film 13 in a rough manner. The semiconductor element 11
A plurality of electrode pads 14 are formed on the upper surface, and are mounted on the element fixing resin 15.
The resin package 12 is formed by molding (potting is also possible) an epoxy resin, for example, as described later.

The metal film 13 functions as an external connection terminal, and is formed so as to cover the resin protrusion 17 formed on the resin package 12. This metal film 1
A wire 18 is provided between the metal film 13 and the semiconductor element 11.
Are electrically connected. Here, attention is paid to the metal film 13 and the resin protrusion 17. First, the resin protrusion 17
In this embodiment, the shape of the resin projection 17 is conical. Therefore, the metal film 13 formed on the resin protrusion 17 also has a conical shape. The reason why the shape of the resin protrusion 17 is conical is that mounting is achieved by increasing the area of the joint portion with the resin package 12 to provide mechanical strength and by making the tip end portion sharp. This is to make the adjacent pitch of the mounting electrodes 26 provided on the substrate 25I as wide as possible.

Further, focusing on the metal film 13, the connection pad 19A is integrally formed on the metal film 13. FIG. 3A shows a metal film 13 on which connection pads 19A corresponding to the configuration shown in FIG. 1 are formed. As shown in the figure, the connection pad 19A is configured to extend substantially in one horizontal direction from the upper edge of the metal film 13.
The connection pad 19A is configured to have a sufficient area for wire bonding the wire 18.

The wire 18 is connected to the connection pad 1
9A is wire-bonded to wire 1A.
Reference numeral 8 denotes a configuration electrically connected to the metal film 13 via the connection pad 19A. That is, in the configuration of the present embodiment, the wire 18 is not the bottom of the metal film 13 but the metal film 1.
3 is connected to a connection pad 19A extending in a substantially horizontal direction.

Therefore, the conventional semiconductor device 110 (FIG. 28)
(See FIG. 2), it is not necessary to provide an area (bonding area required) for bonding the wire 18 to the metal film 13, and the area of the metal film 13 can be reduced. As described above, by reducing the area of the metal film 13, the pitch between adjacent metal films can be reduced, so that the metal films 13 can be arranged in the resin package 12 at high density. . Therefore, the area of the resin package 12 required for forming the same number of metal films 13 can be reduced as compared with the related art, and the size of the semiconductor device 10A can be reduced.

Since the connection pad 19A is embedded in the resin package 12, the connection pad 19A generates an anchor effect on the resin package 12. Also, as described above, the connection pad 1
9A is formed integrally with the metal film 13. Therefore, the bonding force between the metal film 13 and the resin package 12 is increased by the bonding force between the connection pad 19A and the resin package 12, and the metal film 13 can be prevented from detaching from the resin package 12. .

Incidentally, the semiconductor device 10A shown in FIG.
Although an example using the connection pad 19A shown in FIG. 3A has been described, the shape of the connection pad is not limited to the connection pad 19A shown in FIG. 3A. For example, as shown in FIG. 3B, it is also possible to use a connection pad 19B extending in a substantially horizontal flange shape from the entire periphery of the upper edge of the metal film 13. With this configuration,
The area of the metal film 13 can be reduced, and separation of the metal film 13 from the resin package 12 can be prevented.

The semiconductor device 10A having the above structure
Does not require the inner lead and the outer lead required in the conventional SSOP, and does not require the area for routing from the inner lead to the outer lead or the area of the outer lead itself, and achieves miniaturization of the semiconductor device 10A. be able to. Furthermore, a conventional BGA (see FIG. 27)
Since it is not necessary to use a mounting substrate to form such solder balls, the cost of the semiconductor device 10A can be reduced. Also, the resin protrusion 17 and the metal film 13
Have the same function as the solder bumps of the BGA type semiconductor device in cooperation with each other, so that the mountability can be improved.

Here, the semiconductor device 10 having the above-described configuration is used.
The mounting structure of A on the mounting board 25 will be described. FIG.
As shown in (1), when the semiconductor device 10A is mounted on the mounting substrate 25, the present embodiment is characterized in that the underfill resin 23 is disposed between the semiconductor device 10A and the mounting substrate 25. The underfill resin 23 is formed of, for example, a thermosetting resin, and the semiconductor device 1
It is provided to increase the bonding strength between 0A and the mounting board 25.

As described above, in the semiconductor device 10A according to the present embodiment, the wires 18 are connected to the connection pads 19A (19B).
, The area of the metal film 13 is reduced. In the conventional semiconductor device 110 shown in FIG. 28 described above, since the area of the metal film 113 is large, the bonding strength between the metal film 113 and the mounting substrate is strong when the semiconductor device 110 is mounted, and therefore, the underfill resin is provided. There was no need.

However, the semiconductor device 10 according to the present embodiment
A indicates that the area of the metal film 13 is small.
A sufficient bonding strength between the semiconductor device 10A and the mounting substrate 25 cannot be provided only by the bonding force between the semiconductor device 10A and the mounting electrode 26 of the mounting substrate 24. Therefore, in the mounting structure according to the present embodiment, a thermosetting underfill resin 23 is interposed between the semiconductor device 10A and the mounting substrate 25, and the bonding force of the underfill resin 23 causes the semiconductor device 10A to 25 is joined. With this configuration, the bonding property between the semiconductor device 10A and the mounting substrate 25 can be improved while disposing the metal films 13 at high density.

Next, a method of manufacturing the semiconductor device 10A according to the first embodiment will be described. Semiconductor device 1
OA is manufactured using the lead frame 20 shown in FIG. A plurality of conical recesses 22 are formed in a conductive metal base 21 constituting the lead frame 20, and a metal film 13 is formed in the recesses 22. Further, a connection pad 19A integrally connected to the upper edge of the metal film 13 is formed at a position near the recess 22 on the upper surface of the conductive metal base 21 so as to extend in the horizontal direction.

The recess 22 is formed at a position corresponding to the formation position of the resin protrusion 17 formed on the semiconductor device 10A, and has a conical shape corresponding to the shape of the resin protrusion 17. . In addition, the lead frame 20
Is configured so that a plurality of semiconductor devices 10A can be formed at a time (that is, so-called multiple devices can be formed).
9A is also formed in multiple sets on one metal substrate 21.

First, in the manufacturing process of the semiconductor device 10A,
The manufacturing process of the lead frame 20 will be described with reference to FIGS. To manufacture the lead frame 20,
First, as shown in FIG. 4, a flat metal substrate 21 made of a conductive material (for example, copper) is prepared, and is mounted on a press working device. The press working apparatus is provided with a press die 27, on which a plurality of conical protrusions 28 are formed. The shape and arrangement position of the conical protrusion 28 are configured to correspond to the shape (cone shape) and formation position of the metal film 13.

When the metal substrate 21 is mounted on the press working device, the press die 27 moves downward to perform plastic working on the metal substrate 21. Specifically, as shown in FIG. 5, a conical protrusion 28 formed on a press die 27 is pressed into the metal substrate 21. Subsequently, the press mold 27 moves upward, thereby forming a concave portion 22 in the metal substrate 21 as shown in FIG.

When the recess 22 is formed in the metal substrate 21 as described above, subsequently, a plating resist 24 is applied to both upper and lower surfaces of the metal base 21. This plating resist 24
Is a photosensitive resin, for example, and is applied to a predetermined film thickness using a spinner or the like. Subsequently, an exposure process is performed on the plating resist 24 using a mask (not shown), and then a development process is performed to remove a portion of the plating resist 24 corresponding to the concave portion forming position, thereby forming an opening 24a. At this time, the plating resist 24 is also removed at the position where the connection pad 19A is formed.

When the plating resist forming step is completed, a metal film forming step is subsequently performed to form the metal film 13 and the connection pad 19A. In the present embodiment, a plating method is used to form the metal film 13 and the connection pad 19A. For example, electrolytic plating is performed by immersing the metal substrate 21 in a plating tank. FIG. 7 shows the metal substrate 21 on which the metal film 13 and the connection pad 19A are formed.
The thickness of the metal film 13 and the thickness of the connection pad 19A can be arbitrarily set by controlling the plating time.

By performing the above processing, the metal film 1
3 and the connection pads 19A are formed on the metal substrate 21. In the separation step, as will be described later, the metal substrate 2
When the resin package 12 is separated from the lead frame 20, the metal film 13 and the connection pad 19A formed on the lead frame 20 need to be separated from the lead frame 20 together with the resin package 12.

For this reason, the metal film 13 and the connection pad 19
A is required to have a certain degree of separability from the metal substrate 21. Therefore, the metal film 13 and the connection pad 19A are
Prior to forming the second and the like, in order to ensure the above-mentioned separability, a member for improving separability such as a conductive paste is applied to the concave portion 22 and its peripheral position, and the metal film 13 and the connection are formed thereon. The pad 19A may be formed.

When the metal film 13 and the connection pads 19A are formed in the metal film forming step as described above, a resist removing step of removing the plating resist 24 is performed, and the lead frame 20 shown in FIG. 8 is formed. Is done.
In the above-described metal film forming step, a method of forming the metal film 13 and the connection pad 19A using a plating method has been described, but the formation of the metal film 13 and the connection pad 19A is not limited to the plating method. For example, it may be configured to use another film forming technique such as an evaporation method and a sputtering method.

Further, the method of forming the concave portion 22 in the metal base 21 is not limited to the above-mentioned press working, but it is also possible to use drilling or anisotropic etching. When the lead frame 20 is formed as described above, subsequently, as shown in FIG.
Is applied, and the semiconductor element 11 is mounted on the element fixing resin 15 (element mounting step). Element fixing resin 15
Has an insulating property and also functions as an adhesive, so that the semiconductor element 11 is provided on the lead frame 20 with the element fixing resin 1.
5 is mounted by the adhesive force.

When the element mounting step is completed, the lead frame 20 is mounted on a wire bonding apparatus, and is integrally formed on the electrode pad 14 formed on the semiconductor element 11 and the metal film 13 as shown in FIG. The wire 18 is disposed between the connection pad 19A and the connection pad 19A. As a result, the semiconductor element 11 and the metal film 13 are electrically connected via the wires 18 and the connection pads 19A (connection step).

In the connection step, the connection pad 19A has a sufficient area for performing the wire bonding process, and the metal base 21 is located below the connection pad 19A. Connect wire 18 to connection pad 1
As a means for bonding to 9A, an ultrasonic welding method is usually used. However, as described above, the connection pad 19A has a sufficient area for performing the wire bonding process, and a block-like shape is formed below the connection pad 19A. By locating the metal base 21, the wire bonding process can be performed reliably.

After the above connection step is completed, a sealing step for forming a resin package 12 for sealing the semiconductor element 11 on the lead frame 20 is performed. In the present embodiment, a method for molding the resin package 12 will be described, but it is also possible to form the resin package 12 by potting. FIG. 11 is a view showing a state immediately after the lead frame 20 after the connection step has been mounted on a mold and resin (shown in satin) has been molded.
Reference numeral 31 denotes a runner, and 32 denotes a gate portion (resin formed on the gate). As shown in the figure, a plurality of resin packages 12 are collectively formed on a lead frame 20. In the state immediately after the molding, the plurality of formed resin packages 12 are connected by the gate portion 32.

FIGS. 12 and 13 show the lead frame 20 at the end of the sealing step. FIG.
Shows an enlarged view of the resin package 12 corresponding to one semiconductor device, and FIG. 13 shows the entire lead frame 20. The resin package 12 is formed in a predetermined shape by a mold (not shown), and the lead frame 20 has a lower mold function. The resin package 12 is also provided inside the recess 22 (specifically, inside the metal film 13). Are filled to form resin protrusions 17.

When the above sealing step is completed, a tape arranging step is subsequently performed. In the tape installation process,
As shown in FIG. 4, a tape member 33 (shown by hatching) such as an adhesive tape is disposed above a plurality of resin packages 12 formed on the lead frame 20. The tape member 33 has a configuration in which an adhesive is applied to one surface of a base tape, and the base tape is formed of a material that is not damaged by an etchant used in a separation process performed later. In this manner, the upper portions of the plurality of resin packages 12 are
Even if each resin package 12 is separated from the lead frame 20, individual resin packages 1
2 can be regulated by the tape member 33.

The timing at which the tape member 33 is disposed is not limited to the timing after the resin package 12 is formed. For example, the timing at which the tape member 33 is disposed in a mold before the encapsulation step is performed. Alternatively, a plurality of resin packages 12 may be connected by a tape member 33 at the time of molding. When the above-described tape arranging step is completed, subsequently, a separating step of separating the resin package 12 from the lead frame 20 and forming the semiconductor device 10A is performed. FIG. 15 shows a separation step. In the example shown in FIG. 15, a method of dissolving the lead frame 20 by spraying an etching solution on the lead frame 20 and thereby separating the resin package 12 from the lead frame 20 is used. Has been adopted.

As an etching solution used in this separation step, an etching solution having a property of dissolving only the lead frame 20 and not dissolving the metal film 13 and the connection pad 19A is selected. Therefore, the resin package 12 is separated from the lead frame 20 by completely dissolving the lead frame 20. As described above, by using the method of separating the resin package 12 from the lead frame 20 by dissolving the lead frame 20, the separation process of the resin package 12 from the lead frame 20 can be performed reliably and easily. The yield can be improved.

At the time when the separation process is completed as described above, as shown in FIG. 16, since the plurality of resin packages 12 are connected by the gate portion 32,
A gate breaking process for removing the gate portion 32 and a process for peeling off the tape member 33 are carried out, whereby the semiconductor device 10A shown in FIGS. 1 and 2 is manufactured.
Next, a semiconductor device 10B according to a second embodiment of the present invention will be described.

FIG. 17 is a sectional view showing a semiconductor device 10B according to a second embodiment of the present invention. In FIG. 17, the same components as those of the semiconductor device 10A according to the first embodiment described with reference to FIGS. 1 to 3 are denoted by the same reference numerals, and description thereof is omitted. The same applies to each of the embodiments (third to seventh embodiments) described below. In the first embodiment, as shown in FIG. 1, the wire 18 is used as a connection member for connecting the semiconductor element 11 and the connection pad 19A (19B). On the other hand, the semiconductor device 10B according to the present embodiment is characterized in that the solder bumps 34 (protruding electrodes) are used as connection members for connecting the semiconductor element 11 and the connection pads 19B.

The solder bumps 34 are formed on electrode pads (not shown) formed on the semiconductor element 11, and the connection pads 19 B formed integrally on the metal film 13 are formed at positions on the solder bumps 34. It is set at a position corresponding to the formation position. Further, the semiconductor element 11 on which the solder bumps 34 are formed is bonded to the connection pad 19B by face-down bonding, whereby the semiconductor element 11 and the metal film 13 are electrically connected.

As described above, since the semiconductor element 11 is configured to be face-down bonded to the connection pad 19B by using the solder bump 34, the wiring path between the semiconductor element 11 and the metal film 13 is smaller than the configuration using the wire 18. Can be shortened, and electrical characteristics can be improved. Therefore, even if a high-speed element is used as the semiconductor element 11, reliable operation can be ensured without deterioration of characteristics.

FIGS. 18 to 21 show a semiconductor device 10C according to a third embodiment of the present invention. In the semiconductor devices 10A and 10B according to the first and second embodiments described above, the formation position of the metal film 13 is set to a position surrounding the formation position of the semiconductor element 11 (see FIG. 2). This is because, in the semiconductor devices 10A and 10B according to the first and second embodiments, in order to electrically connect the semiconductor element 11 and the metal film 13, the connection pad 19A ( 19
This is because the wire 18 is directly bonded to B).

However, in the configuration in which the metal film 13 is formed except for the position where the semiconductor element 11 is formed, even if the area of the metal film 13 is reduced, a region where the metal film 13 is not necessarily formed on the lower surface of the semiconductor element 11. It is obvious that the size of the semiconductor device 10 cannot be effectively reduced. In the configuration in which the wire 18 is directly bonded to the connection pad 19A (19B), the position where the metal film 13 is formed is limited to the range where the wire 18 can be bonded (the length of the wire 18 is also limited). The metal film 13 cannot be formed at any desired position.

Therefore, in the semiconductor device 10C according to this embodiment, the relay pad 3 is provided between the semiconductor element 11 and the metal film.
5, the arrangement position of the metal film 13 is given a degree of freedom by interposing the routing wire 35, the wiring 39, and the like. Hereinafter, the semiconductor device 10C
Will be described. 18 is an enlarged perspective view showing a main part of the semiconductor device 10C, FIG. 19 is a cross-sectional view of the semiconductor device 10C at a position where the routing wire 37 is provided, and FIG. 20 is an enlarged view of a wiring formation position. FIG. 21 is a perspective view showing the semiconductor device 10C at the wiring arrangement position.
FIG.

First, the formation positions of the metal film 13 (13A) and the resin protrusion 17 (38) of the semiconductor device 10C according to the present embodiment will be noted. In the present embodiment, as shown in FIGS. 18 and 19, the metal film 13A and the resin protrusion 38 are also formed below the semiconductor element 11, and when the semiconductor device 10C is viewed from the bottom, the metal film 13 (13A) is formed. Are arranged in a matrix.

In the following description, the resin package 12
The metal film formed so as to face the semiconductor element 11 below the semiconductor package 11 is referred to as an element-facing metal film 13A. The resin protrusion formed below the resin package 12 so as to face the semiconductor element 11 is referred to as an element-facing resin projection 38. Shall be referred to.
As described above, when the metal film 13 and the device-facing metal film 13A are arranged in a matrix, the metal film 13 and the device-facing metal film 13A include electrode pads 14 formed on the semiconductor device 11 and wires 18 directly. Therefore, there is something that cannot be connected. In this embodiment, the metal film 13 to which the wire 18 cannot be directly connected,
In order to connect the element facing metal film 13A to the electrode pad 14, a relay pad 35, a routing wire 35, and a wiring 39 are provided.

First, focusing on the relay pad 35, the relay pad 35 is formed at a position different from the position where the metal film 13 is formed. Specifically, the relay pad 35 is connected to the wire 18 from the electrode pad 14 formed on the semiconductor element 11.
It is formed in a position suitable for stretching. The formation position of the relay pad 35 can be arbitrarily selected regardless of the formation position of the metal film 13 and the element-facing metal film 13A.

As shown in FIGS. 18 and 19, the routing wire 37 is connected to the relay pad 35 (35a).
This is used to connect to the element-facing metal film 13A. One end of the routing wire 37 is joined to the relay pad 35b, and the other end is joined to the relay pad 35a connected to the element facing metal film 13A via the connection pad 19A. Further, the relay pad 35
a is connected to the electrode pad 14 by a wire 18.

Accordingly, the electrode pad 14 and the element-facing metal film 13A are electrically connected via the wire 18, the relay pad 35a, the routing wire 37, the relay pad 35b, and the connection pad 19A. Accordingly, even with the element-facing metal film 13 </ b> A located below the semiconductor element 11, it is possible to reliably establish an electrical connection with the electrode pad 14 formed on the semiconductor element 11.

The routing wires 37 are arranged before the element mounting step of mounting the semiconductor element 11 is performed. Therefore, although the routing wire 37 is provided at the lower position of the semiconductor element 11, the arrangement pattern can be arbitrarily set regardless of the semiconductor element 11. In the state where the semiconductor device 10C is completed, the routing wires 37 are fixed by being buried in the element fixing resin 15, and even when a plurality of routing wires 37 are provided, they are mutually connected. There is no interference.

Therefore, the semiconductor device 10C according to the present embodiment
In this case, the metal films 13 (including the element-facing metal film 13A) can be arranged in a matrix, so that the metal films 13, 13A can be arranged at a high density.
Thus, the adjacent pitch between the metal films 13 and 13A can be reduced, and the size and the number of pins of the semiconductor device 10c can be reduced.

Subsequently, the wiring 39 will be described mainly with reference to FIGS. The wiring 39 is the semiconductor element 1
It has a function of electrically connecting the metal film 13 and the relay pad 35 provided at a position far away from 1. That is, by providing the wiring 39, even if the metal film 13 is disposed at a position far away from the semiconductor element 11, the electrode pad 14 of the semiconductor device 11 can be provided via the wiring 39, the relay pad 35, and the wire 18. Can be electrically connected to

The shape and length of the relay pad 35 and the wiring 39 can be arbitrarily selected with a high degree of freedom. Therefore, by interposing the relay pad 35 and the wiring 39 between the semiconductor element 11 and the metal film 13 as described above, the electrical connection path from the semiconductor element 11 to the metal film 13 is set with a degree of freedom. can do. This makes it possible to arrange the metal film 13 at an arbitrary position. Therefore, by arranging the metal film 13 efficiently (for example, arranging it in a matrix as in the present embodiment), the semiconductor device 10C can be downsized. Can be achieved.

Further, stud bumps 40 (anchors) which engage with the resin package 12 are formed on the wiring 39. The stud bump 40 can be formed at the time of the wire bonding process of the wire 18. The wiring 39 is formed collectively in the plating step of forming the metal film 13 and has a film-like shape.
In addition, the metal film 13 is formed to be long and extended depending on the position of the metal film 13 to be connected. Therefore, in the configuration simply formed on the resin package 12, the wiring 39 is
2 easily peeled off.

However, by providing the stud bumps 40 on the wiring 39 as in this embodiment, the stud bumps 40 have an anchor effect on the resin package 12. Therefore, it is possible to prevent the wiring 39 from being detached from the resin package 12, and it is possible to improve the reliability of the semiconductor device 10C. In this embodiment, the configuration in which two stud bumps 40 are provided on the wiring 39 is shown. However, the number of stud bumps 40 can be arbitrarily set. Further, the formation position of the stud bump 40 is not limited to the wiring 39, but may be provided on the relay pad 35, for example. As described above, when the stud bumps 40 are provided on the relay pad 35, it is possible to prevent the relay pad 35 from separating from the resin package 12.

FIGS. 22A and 22B show semiconductor devices 10D and 10E according to a fourth embodiment of the present invention. The semiconductor device 10D shown in FIG. 22A has a surface of the resin package 12 on which the metal film 13 is formed (that is, the mounting surface 1).
6), an element-facing resin protrusion 38 is formed so as to face the semiconductor element 11. The semiconductor device 10E shown in FIG. 22B has a mounting surface 16 on which the metal film 13 of the resin package 12 is formed.
The element-facing resin protrusion 38 facing the semiconductor element 11
And a resin protrusion 17 at a position not facing the semiconductor element 11.
A is formed. As described above, by forming the element-facing resin protrusion 38 and the resin protrusion 17A on the resin package 12, the mounting surface 16 has a configuration having irregularities.

The element-facing resin protrusion 38 is formed at a position facing the semiconductor element 11, and is therefore formed using the element-fixing resin 15. Further, the resin protrusion 17A is formed at a position not facing the semiconductor element 11, so that the resin protrusion 17A is formed integrally with the resin package 12. As in the present embodiment, the underfill resin 23 can be reliably removed from the mounting substrate 25 at the time of replacement by providing the element-facing resin protrusion 38 and the resin protrusion 17A on the mounting surface 16 and forming the uneven portion.

That is, the semiconductor device may fail for some reason after being mounted on the mounting board 25. In this case, it is necessary to remove the defective semiconductor device from the mounting board 25 and replace (replace) the semiconductor device with a good semiconductor device. If the underfill resin 23 remains on the mounting substrate 25 when the defective semiconductor device is removed from the mounting substrate 25, it is necessary to remove the underfill resin 23 before replacing the non-defective semiconductor device, which reduces the working efficiency. Resulting in.

However, the semiconductor device 10 according to the present embodiment
In D and 10E, the device-facing resin protrusion 38 and the resin protrusion 17A are formed on the mounting surface 16 (the surface on which the metal film 13 is formed) facing the underfill resin 23. Therefore, the mounting surface 16 has irregularities. It has a configuration. Therefore, when the semiconductor devices 10D and 10E are mounted on the mounting board 25 using the underfill resin 23, the element-facing resin protrusion 38
Since the resin protrusion 17A bites into the underfill resin 23, the bonding strength between the semiconductor devices 10D and 10E and the underfill resin 23 increases.

Therefore, as described above, the semiconductor device 10
When D and 10E are unavoidably replaced from the mounting board 25, the semiconductor devices 10D and 10E are
5, the underfill resin 23 maintains the state of being joined to the semiconductor device side 10D, 10E. Therefore, the underfill resin 23 is connected to the semiconductor device side 10D,
It is not removed together with 10E, and the underfill resin 23 does not remain on the mounting substrate 25 side. This allows
The operation of removing the underfill resin 23 attached to the mounting substrate 25 becomes unnecessary, and new semiconductor devices 10D, 10
E can be easily mounted.

FIG. 23 shows a semiconductor device 10F according to a fifth embodiment of the present invention. In each of the above-described embodiments, the arrangement pitch of the metal film 13 and the arrangement pitch of the electrode pads 14 formed on the semiconductor element 11 are not always the same. In contrast, the semiconductor device 10F according to the present embodiment
Is the arrangement pitch (P1) of the metal film 13 and the electrode pad 14
Are arranged substantially the same (P1 = P2). Each metal film 13 and electrode pad 1
4 is connected by a wire 18.

In the configuration of this embodiment, the mounting area is slightly larger than when the semiconductor element 11 is mounted in a bare chip state, but the size of the resin package 12 can be made substantially equal to that of the semiconductor element 11. Therefore, the semiconductor device 10F can be mounted using a chip bonder similarly to the case of bare chip mounting, and the efficiency of the mounting process can be improved. Further, in the configuration of the present embodiment, since the wiring length of the wire 18 is also reduced, the electrical characteristics can be improved, and the high-speed semiconductor element 11 can be supported.

FIG. 24 shows a semiconductor device 10G according to a sixth embodiment of the present invention. In each of the above-described embodiments, the formation of the resin protrusion 17 is formed in a conical shape. However, the shape of the resin projection is not limited to a conical shape, and any other shape can be used as long as it can reduce the area and has a predetermined mechanical strength. Therefore,
The present embodiment is characterized in that a cylindrical resin protrusion 42 having a cylindrical shape is used as the resin protrusion.

With the configuration of the present embodiment, the same effects as those of the above-described embodiments can be achieved, and the mechanical strength of the conical resin projection 17 particularly at the tip portion can be improved. Can be. In addition, resin protrusion (metal film)
Is not limited to the conical shape and the cylindrical shape described above. For example, as shown in FIG.
The resin protrusion 17A (metal film 13B) having a quadrangular pyramid shape, or the resin protrusion 17B (metal film 13C) having a truncated quadrangular pyramid shape as shown in FIG. As shown in FIG.
C (metal film 13D) may be used.

FIG. 25 shows a semiconductor device 10H according to a seventh embodiment of the present invention. In each of the above-described embodiments, the connection pads 19A and 19B are formed on the metal film 13, and the wires 18 are connected to the connection pads 19A and 19B. On the other hand, the semiconductor device 1 according to the present embodiment
0H is characterized in that the wire 18 is connected to the inside of the metal film 13.

However, in the semiconductor device 10H according to the present embodiment, the wire is not applied to the metal film 13 having a conical shape without increasing the area of the metal film 113 as in the conventional semiconductor device 110 (see FIG. 28). 18 are connected. As a method of connecting the wire 18 to the metal film 113, for example, using a wire bonding apparatus,
A method of temporarily fixing the wire 18 to the upper edge portion 3 and then performing laser irradiation to melt the wire 18 and join the wire 18 to the metal film 13 can be considered.

FIG. 30 shows a semiconductor device 10I according to an eighth embodiment of the present invention. In each of the above-described embodiments, an example in which a thermosetting resin is used as the underfill resin 23 has been described. On the other hand, the semiconductor device 10 according to the present embodiment
I is characterized in that a thermoplastic underfill resin 23A made of a thermoplastic resin is disposed on the surface of the resin package 12 on which the metal film 13 is formed.

Conventionally, underfill resin has been used to fill a gap between a semiconductor element and a mounting substrate after flip-chip mounting a bare chip-shaped semiconductor element on a mounting substrate. As the underfill resin, a thermosetting resin was generally used as in the above-described embodiments. Conventionally, the reason for using a thermosetting resin as the underfill material is that the viscosity of the thermoplastic resin at the time of melting is greater than the viscosity at the time of melting of the thermosetting resin, so if it is used as an underfill material, This is because a large pressure is required, and the base of the mounting terminal of the semiconductor element, that is, the circuit surface of the semiconductor element may be damaged. Therefore, conventionally, a thermosetting resin has been used as the underfill material.

However, as is well known, the thermosetting resin does not soften even when heated after it has been once cured. Therefore, for example, when a defect is found in a semiconductor element after mounting the semiconductor device, the individual semiconductor device cannot be removed (reworked) from the mounting substrate, and the entire mounting substrate is replaced. Was. In addition, when a semiconductor element or a mounting substrate is inexpensive, a mounting substrate on which a defective semiconductor device is present may be damaged by a single defective semiconductor device even if many good semiconductor devices are mounted on the mounting substrate. Had been discarded.

On the other hand, the semiconductor device 1 according to the present embodiment
Since 0I is a configuration in which the semiconductor element 11 is sealed in the resin package 12, it can withstand a high pressure to some extent. Therefore, in the semiconductor device 10I according to the present embodiment, the thermoplastic underfill resin 23A made of a thermoplastic resin can be used as the underfill material.

Thus, even after once mounted,
By raising the temperature, the thermoplastic underfill resin 23
A is plasticized, and the semiconductor device 10I can be easily reworked from the mounting substrate 25. Therefore, it is possible to rework only the semiconductor device in which a defect has occurred, and it is not necessary to discard the entire mounting substrate 25. Therefore, even when an inexpensive semiconductor element or an inexpensive mounting substrate is used, rework can be performed. it can.

FIG. 31 shows a method of disposing the thermoplastic underfill resin 23A. FIG. 2 shows an example in which a potting method of dropping a thermoplastic underfill resin 23A from a nozzle onto a resin package 12 is used. Thus, the thermoplastic underfill resin 23
A can be provided in the same manner as a conventional method of providing a thermosetting underfill resin. Further, without being limited to the potting method, it is also possible to dispose by using a molding method using a mold.

In the example shown in FIG. 30, the metal film 13 is configured to protrude from the thermoplastic underfill resin 23A. However, the metal film 13 is embedded in the thermoplastic underfill resin 23A. It is also possible to set it in the state where it was set. However, in this case, the semiconductor device 10
It is necessary to set the thickness of the thermoplastic underfill resin 23A so that the metal film 13 can break through the thermoplastic underfill resin 23A and connect to the mounting electrode 26 of the mounting substrate 25 when I is pressed toward the mounting substrate 25. is there.

In the above-described embodiment, the thermoplastic underfill resin 23A is provided in the resin package 12 in advance, and the semiconductor device 10I provided with the thermoplastic underfill resin 23A is mounted on the mounting board 25. The configuration was adopted. However, the semiconductor device 10I in a state where the thermoplastic underfill resin 23A is not provided is first flip-chip mounted on the mounting board 25, and then the thermoplastic underfill resin 23A is provided in the gap between the semiconductor device 10I and the mounting board 25. May be filled. Even with this configuration, the same effects as described above can be realized.

[0092]

According to the present invention as described above, the following various effects can be realized. Claim 1 and Claim 2
According to the described invention, it is possible to reduce the area of the metal film, and therefore, it is possible to reduce the pitch between adjacent metal films. it can.

Further, since the connection pads are engaged with the resin package, even if the area of the metal film is reduced, the connection pads generate an anchor effect on the resin package. Separation can be prevented. According to the third aspect of the present invention, the resin protrusion can be effectively reduced in area by forming the shape of the resin protrusion into a columnar shape or a conical shape with a sharp tip.

According to the fourth aspect of the present invention, the degree of freedom can be given to the electrical connection path from the semiconductor element to the metal film, whereby the metal film can be arranged at an arbitrary position. Therefore, the size of the semiconductor device can be reduced. Further, since the wiring is provided with the anchor portion that engages with the resin package, the wiring can be prevented from being detached from the resin package, and the reliability of the semiconductor device can be improved.

According to the fifth aspect of the invention, when the semiconductor device is replaced from the mounting substrate, the underfill resin is removed together with the semiconductor device, so that the mounting process of a new semiconductor device can be easily performed. it can. Also,
According to the invention described in claim 6, the metal films can be arranged in a matrix including the lower part of the semiconductor element.
Since the metal films can be arranged at a high density and the pitch between the metal films can be reduced accordingly, the size of the semiconductor device can be reduced and the number of pins can be increased.

Further, according to the present invention, it is possible to flip-chip mount the semiconductor device on the mounting board at the time of mounting, thereby reducing the wiring length between the conductor element and the mounting board. And electrical characteristics can be improved. According to the eighth aspect of the present invention, since the semiconductor element and the connection pad or the semiconductor element and the relay pad can be connected using the wire bonding technique, the connection processing can be easily performed.

According to the ninth aspect of the present invention, since the connection member is a protruding electrode and the semiconductor element is face-down bonded to the connection pad, the electrical characteristics between the semiconductor element and the connection pad can be improved. Can be improved. According to the tenth and twelfth aspects of the present invention, the underfill resin made of a thermosetting resin is plasticized by raising the temperature, so that rework of the semiconductor device after mounting can be facilitated.

Furthermore, according to the eleventh aspect of the present invention, even if the metal film is reduced in area and arranged at a high density, the semiconductor device and the mounting substrate can be reliably bonded by the bonding force of the underfill resin. .

[Brief description of the drawings]

FIG. 1 is a sectional view of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a bottom view of the semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a diagram for explaining connection pads.

FIG. 4 is a view for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention, and is a view for explaining a lead frame forming step (part 1).

FIG. 5 is a view for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention, and is a view for explaining a lead frame forming step (part 2).

FIG. 6 is a view for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention, and is a view for explaining a lead frame forming step (part 3).

FIG. 7 is a diagram for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention, and is a diagram for explaining a lead frame forming step (part 4).

FIG. 8 is a diagram for explaining the method of manufacturing the semiconductor device according to the first embodiment of the present invention, and is a diagram for explaining a lead frame forming step (part 5).

FIG. 9 is a diagram for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention, and is a diagram for explaining an element mounting step.

FIG. 10 is a diagram for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention, and is a diagram for explaining the connecting step.

FIG. 11 is a diagram for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention, and is a diagram for explaining a sealing step.

FIG. 12 is a cross-sectional view showing the lead frame after the sealing step has been completed.

13A and 13B are a plan view and a side view showing the lead frame after the sealing step has been completed.

FIG. 14 is a diagram for explaining the method of manufacturing the semiconductor device according to the first embodiment of the present invention, and is a diagram for explaining a tape arranging step.

FIG. 15 is a view for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention, and is a view for explaining the separation step.

16A and 16B are a plan view and a side view showing the semiconductor device after the separation step has been completed.

FIG. 17 is a diagram illustrating a semiconductor device according to a second embodiment of the present invention.

FIG. 18 is a view for explaining a semiconductor device according to a third embodiment of the present invention (part 1);

FIG. 19 is a view for explaining a semiconductor device according to a third embodiment of the present invention (part 2);

FIG. 20 is a view for explaining the semiconductor device according to the third embodiment of the present invention (part 3);

FIG. 21 is a view for explaining a semiconductor device according to a third embodiment of the present invention (part 4);

FIG. 22 is a diagram illustrating a semiconductor device according to a fourth embodiment of the present invention.

FIG. 23 is a view illustrating a semiconductor device according to a fifth embodiment of the present invention.

FIG. 24 is a view illustrating a semiconductor device according to a sixth embodiment of the present invention.

FIG. 25 is a view illustrating a semiconductor device according to a seventh embodiment of the present invention.

FIG. 26 is a diagram illustrating an example of a conventional semiconductor device.

FIG. 27 is a diagram illustrating an example of a conventional semiconductor device.

FIG. 28 is a diagram illustrating an example of a conventional semiconductor device.

FIG. 29 is a diagram showing a modification of the shape of the resin protrusion (metal film).

FIG. 30 is a view (No. 1) for describing a semiconductor device according to an eighth embodiment of the present invention.

FIG. 31 is a diagram (part 2) for describing the semiconductor device according to the eighth embodiment of the present invention;

[Explanation of symbols]

 Reference Signs List 10A to 10I Semiconductor device 11 Semiconductor element 12 Resin package 13, 13B to 13D Metal film 13A Element opposed metal film 14 Electrode pad 15 Element fixing resin 17, 17A to 17C Resin protrusion 18 Wire 19A, 19B Connection pad 20 Lead frame 21 Metal base Material 22 Concave part 23 Underfill resin 23A Thermoplastic underfill resin 24 Plating resist 25 Mounting board 27 Press mold 33 Tape member 34 Solder bump 35 Relay pad 37 Route required wire 38 Element facing resin protrusion 39 Wire 41 Wire connection part 42 Conical resin Protrusion

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Masanori Onodera 4-1-1 Kamikadanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Inside Fujitsu Limited (72) Inventor Shuichi Monma 4-1-1 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture No. 1 Inside Fujitsu Limited (72) Inventor Shinya Middle Ages 4-1-1 Kamidadanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture 1-1 Inside Fujitsu Limited Takashi Hozumi 4-1-1 Kamedanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture No. 1 Inside Fujitsu Limited (72) Inventor Yoshiyuki Yoneda 4-1-1 Kamikodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture 1-1 Within Fujitsu Limited (72) Takashi Nomoto 4-chome, Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture No. 1 in Fujitsu Limited

Claims (12)

[Claims] A semiconductor package; a resin package for encapsulating the semiconductor package; a resin protrusion protruding from a mounting side surface of the resin package; a plurality of metal films disposed on the resin protrusion; A semiconductor device comprising an electrode pad on a semiconductor element and a connection member for electrically connecting the metal film, wherein a connection pad extending in a substantially horizontal direction is formed on the metal film, and the connection is performed. A semiconductor device, wherein the connection member is connected to a pad. 2. A semiconductor device, a resin package for encapsulating the semiconductor device, a resin protrusion protruding from a mounting side surface of the resin package, a plurality of metal films disposed on the resin protrusion, A semiconductor device comprising an electrode pad on a semiconductor element and a connection member for electrically connecting the metal film to the metal film, wherein a flange-shaped connection pad is formed on the metal film, and the connection is made to the connection pad. A semiconductor device, wherein members are connected. 3. The semiconductor device according to claim 1, wherein said resin projection has a columnar shape or a conical shape with a sharp tip. 4. The semiconductor device according to claim 1, wherein a relay pad to which the connection member is connected, a wiring connecting the relay pad to the metal film, and a wiring formed on the wiring. A semiconductor device, comprising: an anchor portion that engages with the resin package. 5. The semiconductor device according to claim 1, wherein an uneven portion is formed on a surface of the resin package on which the metal film is formed. 6. The semiconductor device according to claim 1, wherein the semiconductor device is formed on a relay pad to which the connection member is connected, and on an element-facing resin protrusion provided at a position facing the semiconductor element. A semiconductor device comprising: an element-facing metal film; and a wire connecting the relay pad and the element-facing metal film. 7. The semiconductor device according to claim 1, wherein an arrangement pitch of said metal film is substantially equal to an arrangement pitch of said electrode pads on said semiconductor element. Semiconductor device. 8. The semiconductor device according to claim 1, wherein said connection member is a wire. 9. The semiconductor device according to claim 1, wherein said connection member is a protruding electrode, and said semiconductor element is face-down bonded to said connection pad. . 10. The semiconductor device according to claim 1, wherein an underfill resin made of a thermoplastic resin is provided on a surface of the resin package on which the metal film is formed. Semiconductor device. 11. A mounting structure of a semiconductor device for mounting the semiconductor device according to claim 1 on a mounting substrate, wherein a thermosetting underfill resin is provided between the semiconductor device and the mounting substrate. A mounting structure of a semiconductor device characterized by being interposed. 12. A mounting structure of a semiconductor device for mounting the semiconductor device according to claim 1 on a mounting substrate, wherein a thermoplastic underfill resin is interposed between the semiconductor device and the mounting substrate. A semiconductor device mounting structure characterized by being mounted.