JPH11145342A - Power semiconductor device - Google Patents

Power semiconductor device

Info

Publication number
JPH11145342A
JPH11145342A JP32696397A JP32696397A JPH11145342A JP H11145342 A JPH11145342 A JP H11145342A JP 32696397 A JP32696397 A JP 32696397A JP 32696397 A JP32696397 A JP 32696397A JP H11145342 A JPH11145342 A JP H11145342A
Authority
JP
Japan
Prior art keywords
power semiconductor
resin mold
metal base
semiconductor device
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32696397A
Other languages
Japanese (ja)
Inventor
Yukifumi Yoshida
享史 吉田
Yoichi Makimoto
陽一 牧本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sansha Electric Manufacturing Co Ltd
Original Assignee
Sansha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sansha Electric Manufacturing Co Ltd filed Critical Sansha Electric Manufacturing Co Ltd
Priority to JP32696397A priority Critical patent/JPH11145342A/en
Publication of JPH11145342A publication Critical patent/JPH11145342A/en
Pending legal-status Critical Current

Links

Landscapes

  • Injection Moulding Of Plastics Or The Like (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve adhesivity of a resin mold to a power semiconductor device. SOLUTION: This device is constituted of a metal base 1, a power semiconductor chip 4, an input/output terminal 5 and a resin mold 3 prepared through injection mold method. A tapered hole, wherein a diameter of the metal base 1 at the side in which the resin mold 3 is formed is small, and a large diameter at an opposite side of the side where the resin mold 3 is formed is provided. Thereby, the peel off between a base and a resin mold of a power semiconductor device can be eliminated, thus improving productivity.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は電力半導体装置の金
属ベースへの樹脂モールドの密着性の改善に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to improving the adhesion of a resin mold to a metal base of a power semiconductor device.

【0002】[0002]

【従来の技術】従来の電力半導体装置には図2に示すよ
うに,金属ベース21と,電力半導体チップ24と,入
出力端子25と,樹脂モールド23で構成されたものが
ある。金属ベース21には樹脂モールド23を形成する
領域にビス装着用のねじ穴が設けられ,このねじ穴に金
属ベース21の厚みより数ミリメートル長いビス22が
挿入され,金属インジェクション方式で樹脂モールドが
形成される。インジェクション方式で注入された樹脂モ
ールド材はビス22のねじ山の周囲に充填されて硬化さ
れて,金属ベース21と樹脂モールド23が強固に固定
されて樹脂モールド23と金属ベース21の剥離が防止
される。
2. Description of the Related Art As shown in FIG. 2, a conventional power semiconductor device includes a metal base 21, a power semiconductor chip 24, input / output terminals 25, and a resin mold 23. The metal base 21 is provided with a screw hole for screw mounting in a region where the resin mold 23 is formed, and a screw 22 several millimeters longer than the thickness of the metal base 21 is inserted into the screw hole, and the resin mold is formed by a metal injection method. Is done. The resin molding material injected by the injection method is filled around the screw thread of the screw 22 and hardened, and the metal base 21 and the resin mold 23 are firmly fixed to prevent the resin mold 23 from being separated from the metal base 21. You.

【0003】[0003]

【発明が解決しようとする課題】ところが,従来の技術
では,金属ベース21にビス22を止め,このビス22
含めて樹脂モールドされ,樹脂モールドと金属ベースと
が止められ,金属ベースと樹脂モールドの剥離を防止し
ているが,ビス用のねじ穴を設けることともにビス22
を取り付けるための手間が必要であり電力半導体装置の
生産性を低下させる要因となっている。
However, in the prior art, a screw 22 is fixed to a metal base 21 and the screw 22
The resin mold and the metal base are stopped together to prevent the metal base and the resin mold from peeling off.
This requires time and effort to mount the power semiconductor device, which is a factor that reduces the productivity of the power semiconductor device.

【0004】[0004]

【課題を解決するための手段】本発明の電力半導体装置
は,電力半導体チップと,前記電力半導体チップが搭載
される金属ベースと,前記電力半導体チップに接続され
る入出力端子と,インジェクション又はトランスファー
方式で形成し,前記電力半導体チップを保護する樹脂モ
ールドとを有する電力半導体装置において,前記金属ベ
ースの前記樹脂モールドが形成される部分に,前記樹脂
モールドが形成される側の直径が前記樹脂モールドが形
成される側と反対側の直径に比べて小さい,少なくとも
1個のテーパ付穴を有するものである。金属ベースにテ
ーパ付の穴をあけることで樹脂モールドの樹脂材の一部
を樹脂材充填時に金属ベースのテーパ付の穴に食い込ま
せて樹脂モールドが金属ベースからはがれることを防止
する。
A power semiconductor device according to the present invention comprises a power semiconductor chip, a metal base on which the power semiconductor chip is mounted, an input / output terminal connected to the power semiconductor chip, and an injection or transfer device. And a resin mold for protecting the power semiconductor chip, wherein the diameter of the metal base on the side where the resin mold is formed is the same as that of the resin mold. Has at least one tapered hole that is smaller than the diameter on the side opposite to the side on which is formed. By forming a tapered hole in the metal base, a part of the resin material of the resin mold is cut into the tapered hole of the metal base when the resin material is filled, thereby preventing the resin mold from peeling off the metal base.

【0005】[0005]

【発明の実施の形態】本発明を,その実施の形態を示し
た図1を参照して説明する。電力半導体装置は,金属ベ
ース1と,電力半導体チップ4と,入出力端子5と,イ
ンジェクションモールド方式で製作した樹脂モールド3
とで構成されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to FIG. 1 showing an embodiment thereof. The power semiconductor device includes a metal base 1, a power semiconductor chip 4, input / output terminals 5, and a resin mold 3 manufactured by injection molding.
It is composed of

【0006】そして,金属ベース1にはテーパ付を有し
少なくとも1つの穴2を設けられている。テーパ付穴2
は金属ベース1の樹脂モールド3が形成される側の直径
が小さく,樹脂モールド3が形成される側と反対側の直
径が大きいテーパ付穴である。
[0006] The metal base 1 is provided with at least one hole 2 having a tapered shape. Hole 2 with taper
Is a tapered hole having a small diameter on the side of the metal base 1 where the resin mold 3 is formed and a large diameter on the side opposite to the side where the resin mold 3 is formed.

【0007】インジェクションモールド方式でモールド
を形成する際にはモールド3の金型を製作し,金属ベー
ス2の上に圧力をかけながら液状の樹脂モールド材を注
入する。加えられた圧力により樹脂モールド材はテーパ
付穴2に同時に注入される。テーパ付穴2に注入された
液状樹脂モールド材はテーパ付穴2の中で硬化して,樹
脂モールド3を金属ベース1に固定する。テーパ付穴2
は金属ベース1の電力半導体チップ4が搭載される側の
直径が小さく,金属ベースの反対側のテーパ付穴2の直
径が大きいために,テーパ付穴2の直径が電力半導体チ
ップ4搭載側とその反対側での違いで,樹脂モールド材
がテーパ付穴2に注入されると樹脂モールド3は金属ベ
ース1から離れにくくなる。
When forming a mold by the injection molding method, a mold for the mold 3 is manufactured, and a liquid resin molding material is injected onto the metal base 2 while applying pressure. The resin molding material is simultaneously injected into the tapered hole 2 by the applied pressure. The liquid resin molding material injected into the tapered hole 2 cures in the tapered hole 2 and fixes the resin mold 3 to the metal base 1. Hole 2 with taper
Since the diameter of the metal base 1 on the side where the power semiconductor chip 4 is mounted is small and the diameter of the tapered hole 2 on the opposite side of the metal base is large, the diameter of the tapered hole 2 is smaller than that of the power semiconductor chip 4 mounting side. Due to the difference on the opposite side, when the resin mold material is injected into the tapered hole 2, the resin mold 3 becomes difficult to separate from the metal base 1.

【0008】上記実施の形態では,インジェクションモ
ールド方法で電力半導体装置を説明していたが,一般的
なトランスファーモールドによって行ってもよい。
In the above-described embodiment, the power semiconductor device is described by the injection molding method. However, the power semiconductor device may be performed by general transfer molding.

【0009】[0009]

【発明の効果】金属ベースにテーパ付穴を設けること
で,電力半導体装置のベースと樹脂モールドの間の剥離
を除くことができて,生産性を向上することができる。
また,金属ベースにビス用のねじ穴をあける必要はな
く,さらにビスを取り付ける必要もない。
By providing a tapered hole in the metal base, peeling between the base of the power semiconductor device and the resin mold can be eliminated, and the productivity can be improved.
Also, there is no need to drill screw holes for screws in the metal base, and there is no need to attach screws.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の電力半導体装置の実施の形態の構造図
である。
FIG. 1 is a structural diagram of an embodiment of a power semiconductor device of the present invention.

【図2】従来の電力半導体装置の構造図である。FIG. 2 is a structural diagram of a conventional power semiconductor device.

【符号の説明】[Explanation of symbols]

1 金属ベース 2 テーパ付穴 3,23 樹脂モールド 4,24 電力半導体チップ 5,25 入出力端子 21 金属ベース 22 ビス REFERENCE SIGNS LIST 1 metal base 2 tapered hole 3,23 resin mold 4,24 power semiconductor chip 5,25 input / output terminal 21 metal base 22 screw

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 電力半導体チップと,前記電力半導体チ
ップが搭載される金属ベースと,前記電力半導体チップ
と接続される入出力端子と,前記電力半導体チップを保
護する樹脂モールドとを有する電力半導体装置におい
て,前記金属ベースの前記樹脂モールドが形成される部
分に,前記樹脂モールドが形成される側の直径が前記樹
脂モールドが形成される側と反対側の直径に比べて小さ
い,少なくとも1個のテーパ付穴を有することを特徴と
する電力半導体装置。
1. A power semiconductor device having a power semiconductor chip, a metal base on which the power semiconductor chip is mounted, input / output terminals connected to the power semiconductor chip, and a resin mold for protecting the power semiconductor chip. And at least one taper at a portion of the metal base where the resin mold is formed, the diameter of the side where the resin mold is formed is smaller than the diameter of the side opposite to the side where the resin mold is formed. A power semiconductor device having a perforated hole.
JP32696397A 1997-11-11 1997-11-11 Power semiconductor device Pending JPH11145342A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32696397A JPH11145342A (en) 1997-11-11 1997-11-11 Power semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32696397A JPH11145342A (en) 1997-11-11 1997-11-11 Power semiconductor device

Publications (1)

Publication Number Publication Date
JPH11145342A true JPH11145342A (en) 1999-05-28

Family

ID=18193755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32696397A Pending JPH11145342A (en) 1997-11-11 1997-11-11 Power semiconductor device

Country Status (1)

Country Link
JP (1) JPH11145342A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7671382B2 (en) 2005-12-19 2010-03-02 Mitsubishi Electric Corporation Semiconductor device with thermoplastic resin to reduce warpage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7671382B2 (en) 2005-12-19 2010-03-02 Mitsubishi Electric Corporation Semiconductor device with thermoplastic resin to reduce warpage

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