JPH11143070A - Positive photosensitive resin composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a pattern high in resolution and film endurance and superior in adhesion to a blocking resin and high in sensitivity to ultraviolet exposure by incorporating each specified amount of a specified polyamide and a specified sulfonate ester and a specified phenol compound. SOLUTION: This photosensitive resin composition contains 100 pts.wt. of the polyamide (A) represented by formula I, 1-50 pts.wt. of the 1,2- naphthoquinone-2-diazido-4-sulfate ester (B), 1-50 pts.wt. of the 1,2- naphthoquinone-2-diazido-5-sulfonnate ester (C) and 1-30 pts.wt. of the phenol compound (D) represented by formula II. In the formula I, X is a tetravalent cyclic group; Y is a divalent cyclic group; Z is represented by formula III; E is an aliphatic or cyclic group having an alkenyl or alkynyl group; each of (a) and (b) is a mol fraction and (n) is 2-500. In the formula II, each of R5 and R6 is an H atom or an alkyl group; and each of R7 -R10 is an H or halogen atom or the like.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-sensitivity positive photosensitive resin composition capable of obtaining a pattern having a high resolution and a high residual film ratio, and having excellent adhesion to a sealing resin and excellent storage stability. It is about things.

[0002]

2. Description of the Related Art Conventionally, a polyimide resin having excellent heat resistance and excellent electrical and mechanical properties has been used for a surface protective film and an interlayer insulating film of a semiconductor element. There is a demand for remarkable improvement in heat cycle resistance and heat shock resistance due to the increase in size, increase in size, thinner and smaller package, shift to surface mounting by solder reflow, etc., and further high-performance resin is required. It has become On the other hand, a technique of imparting photosensitivity to the polyimide resin itself has recently attracted attention, and examples thereof include a photosensitive polyimide resin represented by the following formula (8).

[0003]

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When this is used, a part of the pattern forming process can be simplified, and the effect of shortening the process and improving the yield can be obtained. However, since a solvent such as N-methyl-2-pyrrolidone is required at the time of development, it is safe. There is a problem in performance and handling. Therefore, recently, a positive photosensitive resin that can be developed with an alkaline aqueous solution has been developed. For example, Japanese Patent Publication No. 1-46862
In Japanese Patent Application Laid-Open Publication No. H11-209, a positive photosensitive resin comprising a polybenzoxazole precursor as a base resin and a diazoquinone compound as a photosensitive material is disclosed. It has high heat resistance, excellent electrical properties and fine workability, and has the potential not only as a wafer coat but also as an interlayer insulating resin. The mechanism of development of the positive photosensitive resin is that the unexposed portion of the diazoquinone compound is insoluble in the aqueous alkali solution, but the exposure causes the diazoquinone compound to undergo a chemical change and become soluble in the aqueous alkaline solution. By utilizing the difference in solubility between the exposed part and the unexposed part and dissolving and removing the exposed part, it becomes possible to form a coating film pattern of only the unexposed part. When these photosensitive resins are actually used, what is particularly important is the sensitivity of the photosensitive resin. If the sensitivity is low, the exposure time becomes long and the throughput is reduced. Therefore, in order to improve the sensitivity of the photosensitive resin, for example, by reducing the molecular weight of the base resin,
Since the film thickness of the unexposed portion becomes large during development, there arises a problem that a required film thickness cannot be obtained or a pattern shape is lost. Further, when a 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester compound is used alone as a photosensitive material, not only the solubility of the exposed portion is increased, but also the solubility of the unexposed portion is increased. The pattern shape becomes poor, resulting in a problem that the resolution becomes low. Under such circumstances, development of a photosensitive resin which satisfies the above characteristics and has high sensitivity is strongly desired. When such a photosensitive resin is used as a surface protective film of a semiconductor element, a particular problem is adhesion to a package sealing resin formed thereon in a later step. If the adhesion is poor, peeling occurs at the interface, and the semiconductor package is cracked, or water enters the crack to cause electrical failure of the semiconductor.

[0005]

According to the present invention, a pattern having a high resolution and a high residual film ratio can be obtained, the adhesiveness with a sealing resin is excellent, and a high sensitivity can be obtained in an ultraviolet exposure at a wavelength of 365 nm. It is an object of the present invention to provide a positive photosensitive resin.

[0006]

According to the present invention, there is provided a compound represented by the general formula (1):
(A), 1 to 50 parts by weight of 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester compound (B), and 1,2-naphthoquinone-2
-Diazido-5-sulfonic acid ester compound (C) 1
The present invention relates to a positive photosensitive resin composition comprising 50 parts by weight and 1 to 30 parts by weight of a phenol compound (D) represented by the general formula (2).

[0007]

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[0008]

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The polyamide of the formula (1) comprises bisaminophenol having the structure of X, dicarboxylic acid having the structure of Y, and acid anhydride having the structure of E. When heated, the ring is dehydrated and closed, and changes to a heat-resistant resin called polybenzoxazole. X of the polyamide (1) of the present invention is, for example,

[0010]

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However, the present invention is not limited to these. Particularly preferred among these are:

[0012]

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[0013] It is more selected. Also, Y of the formula (1)
Is, for example,

[0014]

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However, the present invention is not limited to these. Particularly preferred among these are:

[0016]

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[0017] It is selected more. Also, E of the formula (1)
Is, for example,

[0018]

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However, the present invention is not limited to these. Among them, particularly preferred are:

[0020]

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[0021] In the present invention, after a polyamide is synthesized by reacting a dicarboxylic acid derivative having a structure of Y with a bisaminophenol having a structure of X, an acid anhydride having at least one alkenyl group or alkynyl group represented by E in the formula (1) is obtained. The terminal amino group is capped with a substance. Further, Z in equation (1) is
For example

[0022]

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However, the present invention is not limited to these. Z in the formula (1) is used, for example, when particularly excellent adhesion is required to a substrate such as a silicon wafer, and the use ratio b is up to 40.0 mol%. If it exceeds 40.0 mol%, the solubility of the resin is extremely reduced, and undeveloped portions (scum) are generated, so that pattern processing cannot be performed. In using these X, Y, E, and Z, one type or a mixture of two or more types may be used.

1,2-naphthoquinone-2 used in the present invention
-Diazide compounds are disclosed in U.S. Pat. No. 2,772,9
No. 72, No. 2,797,213, No. 3,669,65
No. 8 known substances. For example, the following are mentioned, but it is not limited to these.

[0025]

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[0026]

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[0027]

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Among them, the followings are particularly preferable in view of high sensitivity and high residual film ratio.

[0029]

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In addition, compounding of 1,2-naphthoquinone-2-diazide-4-sulfonic acid compound (B) and 1,2-naphthoquinone-2-diazido-5-sulfonic acid compound (C) with polyamide (A) The amounts are in each case 1 to 50 parts by weight per 100 parts by weight of polyamide. If the amount is less than 1 part by weight, the patterning properties of the resin will be poor. If the amount exceeds 50 parts by weight, not only will the sensitivity significantly decrease, but also the adhesion to the sealing resin and the tensile elongation of the film will increase. Is significantly reduced.

1,2-naphthoquinone-2-diazide-4
-Sulfonic acid compound (B) and 1,2-naphthoquinone-2
The compounding ratio of -diazide-5-sulfonic acid compound (C) is used in a range of 1 ≦ (C) / (B) ≦ 10 by weight. When (C) / (B) is less than 1, the solubility of the unexposed portion is increased, so that a good pattern cannot be maintained, resulting in low resolution, and conversely, (C) / (B) 10
When the ratio exceeds 1, almost no contribution to high sensitivity is recognized.

A dihydropyridine derivative can be added to the positive photosensitive resin composition of the present invention, if necessary, in order to enhance photosensitive characteristics. Examples of the dihydropyridine derivative include 2,6-dimethyl-3,5-diacetyl-
4- (2'-nitrophenyl) -1,4-dihydropyridine, 4- (2'-nitrophenyl) -2,6-dimethyl-3,5-dicarbethoxy-1,4-dihydropyridine, 4- (2 ', 4'-Dinitrophenyl) -2,6
-Dimethyl-3,5-dicarbomethoxy-1,4-dihydropyridine and the like.

It is important that the positive photosensitive resin composition of the present invention further contains a phenol compound represented by the general formula (2).

[0034]

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As a technique for adding a phenol compound to a positive resist composition, for example, JP-A-3-200
No. 251, JP-A-3-200252, JP-A-3-200253, JP-A-3-200254, JP-A-4-1650, JP-A-4-11260
JP, JP-A-4-12356, JP-A-4-12
357. However, phenol compounds such as those described above have a small effect of improving sensitivity even when used in a positive photosensitive resin containing a polyamide as a base resin in the present invention. However, when the phenol compound represented by the general formula (2) in the present invention is used, the dissolution rate in the exposed part increases, and the sensitivity improves. Further, the film loss of the unexposed portion as seen when the sensitivity is increased by reducing the molecular weight is very small. In the present invention,
As a new property by adding the phenol compound represented by the general formula (2), it has been found that a positive photosensitive resin composition having improved adhesion to a sealing resin can be obtained.

Examples of the phenol compound represented by the general formula (2) include, but are not limited to, the following.

[0037]

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[0038]

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[0039]

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[0040]

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Among these, particularly preferred in terms of sensitivity and residual film ratio are as follows:

[0042]

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The compound represented by the general formula (6) or (7) is contained alone or in the form of a mixture in the total phenol compound (D) in an amount of 50% by weight or more. The addition amount of the phenol compound (D) is preferably 1 to 30 parts by weight based on 100 parts by weight of the polyamide represented by the general formula (1). If the amount of the phenol compound is more than 30 parts by weight, the residual film ratio is remarkably reduced at the time of development, or precipitates during frozen storage, which is not practical. When the addition amount is less than 1 part by weight, not only the adhesion to the sealing resin is lowered but also the sensitivity at the time of development is lowered.

If necessary, additives such as a leveling agent and a silane coupling agent can be added to the positive photosensitive resin composition of the present invention. In the present invention, these components are dissolved in a solvent and used in the form of a varnish.
Examples of the solvent include N-methyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, and propylene glycol. Monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3
-Butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl-3-methoxypropionate, etc., and may be used alone or as a mixture.

In the method of using the positive photosensitive resin composition of the present invention, the composition is first applied to a suitable support, for example, a silicon wafer, a ceramic substrate, an aluminum substrate or the like.
In the case of a semiconductor device, the amount of coating is 0.1 μm for the final film thickness after curing.
It is applied so as to have a thickness of 1 to 20 μm. When the thickness is 0.1 μm or less, it is difficult to sufficiently exert the function as a protective surface film of the semiconductor element, and when it is 20 μm or more, it becomes difficult to obtain a fine processing pattern, In addition, processing takes time and the throughput is reduced.
Examples of the coating method include spin coating using a spinner, spray coating using a spray coater, dipping, printing, and roll coating. Next, after pre-baking at 60 to 130 ° C. to dry the coating film, a desired pattern shape is irradiated with actinic radiation. As the actinic ray, X-rays, electron beams, ultraviolet rays, visible rays, and the like can be used, but those having a wavelength of 200 to 500 nm, and particularly a wavelength of 365 nm are preferable because the greatest effect can be obtained. Next, a relief pattern is obtained by dissolving and removing the irradiated portion with a developer. Examples of the developer include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia, primary amines such as ethylamine and n-propylamine, diethylamine, and di-n. −
Secondary amines such as propylamine, triethylamine,
Aqueous solutions of tertiary amines such as methyldiethylamine, alcoholamines such as dimethylethanolamine and triethanolamine, alkalis such as quaternary ammonium salts such as tetramethylammonium hydroxide and tetraethylammonium hydroxide, and methanol An aqueous solution to which a suitable amount of a water-soluble organic solvent such as alcohol, such as ethanol, or a surfactant is added can be suitably used. As a developing method, a system such as spray, paddle, immersion, and ultrasonic wave can be used. Next, the relief pattern formed by development is rinsed. Distilled water is used as the rinsing liquid. Next, perform a heat treatment,
An oxazole ring is formed to obtain a final pattern having high heat resistance. The positive photosensitive resin composition according to the present invention is useful not only for semiconductor applications but also as interlayer insulation for multilayer circuits, cover coats for flexible copper clad boards, solder resist films, liquid crystal alignment films, and the like.

[0046]

The present invention will be described below in detail with reference to examples. << Example 1 >> * Synthesis of polyamide 0.8 mol of terephthalic acid and 0.2 mol of isophthalic acid
-Hydroxy-1,2,3-benzotriazole obtained by reacting with 2 moles of dicarboxylic acid derivative 360.4
g (0.9 mol) and hexafluoro-2,2-bis (3
-Amino-4-hydroxyphenyl) propane366.
3 g (1.0 mol) with a thermometer, a stirrer, a raw material inlet,
The mixture was placed in a four-necked separable flask equipped with a dry nitrogen gas inlet tube, and 3000 g of N-methyl-2-pyrrolidone was added to dissolve. Thereafter, the reaction was carried out at 75 ° C. for 12 hours using an oil bath. Next, 32.8 g (0.2 mol) of 5-norbornene-2,3-dicarboxylic anhydride dissolved in 500 g of N-methyl-2-pyrrolidone was added, and the mixture was further stirred for 12 hours to complete the reaction. After filtering the reaction mixture, the reaction mixture was poured into a solution of water / methanol = 3/1, the precipitate was collected by filtration, washed sufficiently with water, dried under vacuum, and represented by the general formula (1): X is a mixture of the following formulas X-1 and Y is a mixture of the following formulas Y-1 and Y-2 to obtain a target polyamide (A-1) having a = 100 and b = 0.

* Preparation of Positive Photosensitive Resin Composition 100 g of synthesized polyamide (A-1), 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester compound (Q-1) having the structure of the following formula 10 g, 15 g of 1,2-naphthoquinone-2-diazido-5-sulfonic acid ester compound (Q-2) and 15 g of a phenol compound (P-1) having a structure of the following formula are dissolved in 200 g of N-methyl-2-pyrrolidone. After that, the mixture was filtered through a 0.2 μm Teflon filter to obtain a photosensitive resin composition.

* Characteristic evaluation After coating this positive photosensitive resin composition on a silicon wafer using a spin coater, it was dried on a hot plate at 120 ° C. for 4 minutes to obtain a coating film having a thickness of about 5 μm. . A mask (Test Chart N) manufactured by Toppan Printing Co., Ltd.
o. 1: a high-pressure mercury lamp was used to emit 365-nm ultraviolet light extracted from the filter while changing the exposure amount using a high-pressure mercury lamp. Next, the exposed portion is dissolved and removed by immersion in a 1.40% aqueous solution of tetramethylammonium hydroxide for 60 seconds, and then purified water is added.
Rinse for 0 seconds. As a result, the exposure amount was 170 mJ / cm.
It was confirmed that the pattern was formed from the portion irradiated in ² . (The sensitivity is 170 mJ / cm ² ). The residual film ratio at this time (film thickness after development / film thickness before development × 100) is 8
9.7%, and the resolution was 4 μm, which were very high values. Separately, a positive-type photosensitive resin composition is similarly coated on a silicon wafer and prebaked, and then placed in an oven at 30 minutes / 150 ° C., 30 minutes / 250 ° C., and 30 minutes / 35.
After heating and curing the resin in the order of 0 ° C., an epoxy resin composition for semiconductor encapsulation (Sumitomo Bakelite) is placed on the cured film.
Manufactured by EME-6300H) 2 × 2 × 2 mm (width ×
(Length × height). Using Tensilon,
As a result of measuring the shear strength of the sealing epoxy resin composition formed on the cured polybenzoxazole resin film, it was found that the shear strength was 3.5.
kg / mm ² .

Example 2 The amount of the 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester compound (Q-1) in Example 1 was 12.5 g, and 1,2-naphthoquinone-2-diazide was used. Example 1 except that the amount of the -5-sulfonic acid ester compound (Q-2) was changed to 12.5 g.
The same evaluation was performed. << Example 3 >> 1,2-naphthoquinone in Example 1
2-diazide-4-sulfonic acid ester compound (Q-
The same evaluation as in Example 1 was performed except that the addition amount of 1) was changed to 5 g and the addition amount of the 1,2-naphthoquinone-2-diazide-5-sulfonic acid ester compound (Q-2) was changed to 20 g. << Example 4 >> The phenolic compound (P-
1) was replaced with (P-2), and the added amount of the component was further changed as shown in Table 1.
The same evaluation as in Example 1 was performed, except that the above was changed. << Example 5 >> The phenolic compound (P-
The addition amount of 1) was set to 5 g, and the addition amount of each component was further determined as shown in Table 1.
The same evaluation as in Example 1 was performed, except that the above was changed. << Example 6 >> In the synthesis of the polyamide in Example 1, instead of 0.8 mol of terephthalic acid and 0.2 mol of isophthalic acid, 1 mol of diphenyl ether-4,4'-dicarboxylic acid was used instead of the general formula (1) ), X is the following formula X-1, Y is the following formula Y-3, and a polyamide (A-2) consisting of a = 100 and b = 0 is synthesized, and the addition amount of each component is shown in Table 1. The same evaluation as in Example 1 was performed, except that the above was changed. Example 7 In the synthesis of polyamide in Example 6, hexafluoro-2,2-bis (3-amino-4-
(Hydroxyphenyl) propane instead of 1 mole,
Using 1 mol of 3′-diamino-4,4′-dihydroxydiphenylsulfone, represented by the general formula (1), X is the following formula X-2, Y is the following formula Y-3, and a = 100, b = 0
(A-3) was synthesized. Furthermore, 1,
The 2-naphthoquinone-2-diazide-4-sulfonic acid ester compound (Q-1) is (Q-3), and the 1,2-naphthoquinone-2-diazide-5-sulfonic acid ester compound (Q-2) is ( The same evaluation as in Example 1 was performed except that the addition amount of each component was changed as shown in Table 1 in place of Q-4). Example 8 In the synthesis of polyamide in Example 1, hexafluoro-2,2-bis (3-amino-4-
348.0 g (0.9) of hydroxyphenyl) propane
5 mol), and 12.4 g (0.05 mol) of 1,3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane was added instead. Wherein X is the following formula X-1, Y is the following formula Y-1 and Y
The polyamide (A-4) having a mixture of -2 and Z represented by the following formula Z-1 and a = 95 and b = 5 was synthesized. Further, the same evaluation as in Example 1 was performed except that the addition amount of each component was changed as shown in Table 1.

Comparative Example 1 The amount of 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester compound (Q-1) in Example 1 was 0 g, and 1,2-naphthoquinone-2-diazide-5 was used. -Sulfonic acid ester compound (Q-
The same evaluation as in Example 1 was performed except that the addition amount of 2) was changed to 25 g. << Comparative Example 2 >> 1,2-Naphthoquinone in Example 1
2-diazide-4-sulfonic acid ester compound (Q-
The addition amount of 1) was changed to 2 g, the addition amount of 1,2-naphthoquinone-2-diazide-5-sulfonic acid ester compound (Q-2) was changed to 23 g, and the addition amount of each component was changed as shown in Table 1. Otherwise, the same evaluation as in Example 1 was performed. << Comparative Example 3 >> 1,2-Naphthoquinone in Example 1
2-diazide-4-sulfonic acid ester compound (Q-
The addition amount of 1) was changed to 20 g, the addition amount of 1,2-naphthoquinone-2-diazide-5-sulfonic acid ester compound (Q-2) was changed to 5 g, and the addition amount of each component was changed as shown in Table 1. Otherwise, the same evaluation as in Example 1 was performed. << Comparative Example 4 >> The same evaluation as in Example 1 was performed except that the addition amount of the phenol compound in Example 6 was reduced to 0.5 g and the addition amount of each component was changed as shown in Table 1. << Comparative Example 5 >> The same evaluation as in Example 1 was performed except that the addition amount of the phenol compound in Example 6 was increased to 40 g, and the addition amount of each component was changed as shown in Table 1. << Comparative Example 6 >> The phenol compound (P-
The same evaluation as in Example 1 was performed except that 1) was changed to (P-3). Table 1 shows the evaluation results of Examples 1 to 8 and Comparative Examples 1 to 6 described above.

[0051]

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[0052]

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[0053]

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[0054]

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[0055]

[Table 1]

* Evaluation results In Examples 1 to 3 and Comparative Examples 1 to 3, both 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester compound (Q-1) and 1,2-naphthoquinone-2- Diazide-5
-Evaluation based on the amount of the sulfonic acid ester compound (Q-2) added. Comparative Example 1 in which the addition amount of Q-1 is 0 has no effect of high sensitivity. Similarly, in the case of Comparative Example 2 where 10 <(C) / (B), the effect of the high sensitivity is similarly weak and therefore is not recognized. Comparative Example 3 in which (C) / (B) <1 shows good sensitivity, but has a low solubility because the solubility of Q-1 is high, so that a difference in solubility between the exposed part and the unexposed part is not easily obtained. doing. Examples 1, 4, and 5 and Comparative Examples 4 to 6 are evaluations based on the type and amount of the phenol compound. In the case of Comparative Example 4 in which the addition amount of P-1 was less than 1 part by weight, not only the sensitivity was not so much improved, but also the adhesion to the sealing resin was lowered. In Comparative Example 5 in which the amount of P-1 added was 30 parts by weight or more, the solubility was too high, and the residual film ratio was significantly reduced. In Comparative Example 6 in which the type of the phenol compound was changed to P-3, the sensitivity was lowered although the residual film ratio was high.

[0057]

According to the present invention, it is possible to form a pattern having a high resolution and a high residual film ratio, excellent adhesiveness to a sealing resin, and a high sensitivity in exposure to ultraviolet light having a wavelength of 365 nm. Mold photosensitive resin can be obtained.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification symbol FI // C09D 177/06 H01L 21/30 502R (72) Inventor Takashi Hirano 2-5-8 Higashishinagawa, Shinagawa-ku, Tokyo Sumitomo Bakelite Inside the corporation

Claims (10)

[Claims] 1. 100 parts by weight of a polyamide (A) represented by the general formula (1), 1 to 50 parts by weight of a 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester compound (B), and 1,2- Positive type comprising naphthoquinone-2-diazido-5-sulfonic acid ester compound (C) in an amount of 1 to 50 parts by weight and phenol compound (D) represented by the general formula (2) in an amount of 1 to 30 parts by weight. Photosensitive resin composition. Embedded image Embedded image 2. X in the polyamide of the general formula (1)
The positive photosensitive resin composition according to claim 1, wherein is selected from the following. Embedded image 3. Y in the polyamide of the general formula (1)
Is selected from the following: The positive photosensitive resin composition according to claim 1 or 2, wherein Embedded image 4. The polyamide of the general formula (1)
Is selected from the following: The positive photosensitive resin composition according to claim 1, 2 or 3. Embedded image 5. A 1,2-naphthoquinone-2-diazide-
The compounding ratio of the 4-sulfonic acid ester compound (B) and the 1,2-naphthoquinone-2-diazide-5-sulfonic acid ester compound (C) is 1 ≦ (C) / (B) ≦ 10 by weight.
The positive photosensitive resin composition according to claim 1, 2, 3, or 4, wherein 6. 1,2-Naphthoquinone-2-diazide-
The positive photosensitive resin composition according to claim 1, 2, 3, 4, or 5, wherein the 4-sulfonic acid ester compound (B) is selected from the following. Embedded image 7. 1,2-Naphthoquinone-2-diazide-
The positive photosensitive resin composition according to claim 1, 2, 3, 4, 5, or 6, wherein the 5-sulfonic acid ester compound (C) is selected from the following. Embedded image 8. 1,2-Naphthoquinone-2-diazide-
The 4-sulfonic acid ester compound (B) and the 1,2-naphthoquinone-2-diazide-5-sulfonic acid ester compound (C) are compounds represented by the general formulas (3) and (4), respectively. 8. The positive photosensitive resin composition according to 6 or 7. Embedded image 9. The positive photosensitive resin composition according to claim 1, wherein the phenol compound (D) is a phenol compound represented by the general formula (5). Embedded image 10. The phenol compound (D) is a compound represented by the general formula (6) or (7), and represents 50% by weight of the phenol compound (D) alone or in a mixture.
The positive photosensitive resin composition according to claim 1, comprising the above. Embedded image