JPH11118875A - Burn-in board and burn-in method using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide burn-in techniques whereby a burn-in test for a semiconductor device can be conducted well at reduced cost. SOLUTION: A burn-in board 1, which has a substrate 2 consisting of a positioning groove 4 for positioning a semiconductor device and an electrode 5 provided in the positioning groove 4 and electrically connected to the semiconductor device, and which has a holding lid 3 consisting of pressing parts 8 pressing the semiconductor device placed on the substrate 2 and heat radiation holes 9 formed along the pressing parts 8, is used to enable the semiconductor device to make good contact with the electrode 5 of the burn-in board 1 without use of a socket, to permit a highly reliable burn-in test. Also, since no socket is used for the burn-in board 1, the manufacturing cost of the burn-in board 1 and therefore the manufacturing cost of the semiconductor device can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique which is particularly effective when applied to a burn-in technique for a semiconductor device.

[0002]

2. Description of the Related Art A large number of semiconductor devices are formed, for example, on a Si wafer, and after cutting and molding to package separated semiconductor chips, an electrical load is applied to completely eliminate defects in the manufacturing process. A burn-in test has been conducted to make this possible.

Generally, in a burn-in test, a semiconductor device is mounted on each of a plurality of sockets provided on a burn-in board, and the semiconductor device mounted on the socket on the burn-in board is subjected to a specified voltage at a constant high temperature. By applying a voltage of about 1.2 times, an electrical load is accelerated and a defect in the manufacturing process is completely defective.

However, in such a burn-in substrate,
Sockets are formed for each product or product type, and it is difficult to share burn-in boards by product type. Moreover, about 7% of the manufacturing cost of the burn-in substrate
Approximately 80% is the cost of the socket, and the socket is very expensive with respect to the burn-in board.

Further, a burn-in board using the socket is applied with a voltage of about 1.2 times the normal voltage for a long time at a constant high temperature, and the semiconductor device mounted on the socket is broken by self-heating during the burn-in test. As a result, the socket on which the semiconductor device is mounted also begins to melt, and the shape of the socket may be deformed. Along with such deformation of the socket shape, when the next semiconductor device is mounted, it cannot be satisfactorily mounted on the deformed socket, causing a problem that leads of the semiconductor device may be deformed.

Further, a burn-in technique for performing a burn-in test of a semiconductor device without using a socket is described in, for example, Japanese Patent Application Laid-Open No. 3-146888. As an outline, a burn-in substrate provided with a suction hole in a convex portion serving as a holding device of a semiconductor device is connected to a burn-in device having an exhaust device to vacuum-suction the semiconductor device mounted on the convex portion. This is a technology that performs a burn-in test by fixing it.

[0007]

However, in the above-described burn-in technique, in order to suck the semiconductor device from a suction hole provided in the burn-in substrate, the burn-in device for connecting the burn-in substrate is connected to the burn-in device. It is necessary to add or improve the exhaust means, and the manufacturing cost of the semiconductor device increases.

In a burn-in substrate provided with a suction hole in a convex portion serving as a holding device of the semiconductor device, the semiconductor device is positioned and mounted on the convex portion of the burn-in substrate, and then the exhaust device of the burn-in device sets the semiconductor device to the position. The semiconductor device mounted on the burn-in substrate is fixed by vacuum suction from a suction hole formed in a protrusion of the burn-in substrate. Therefore, the semiconductor device positioned and mounted on the convex portion of the burn-in substrate is not fixed, and when the burn-in substrate positioned and mounted on the semiconductor device is transported to the burn-in device, or the burn-in substrate is transferred to the processing chamber of the burn-in device. The semiconductor device positioned and mounted on the burn-in substrate may move due to vibrations during mounting or the like, and the leads of the semiconductor device may be deformed.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a burn-in technique which can solve the above-mentioned problems and can perform a burn-in test of a semiconductor device inexpensively and favorably.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0011]

The following is a brief description of an outline of a typical invention among the inventions disclosed in the present application.

That is, in a burn-in technique for electrically connecting a plurality of semiconductor devices and applying an electric load to the semiconductor devices, a positioning groove for positioning the semiconductor device, and a semiconductor device provided in the positioning groove, A burn-in having a substrate composed of electrodes that are electrically connected, a pressing part configured to press the semiconductor device mounted on the substrate, and a holding lid including a heat radiation hole provided along the pressing part. This is a burn-in technique for a semiconductor device using a substrate.

The positioning groove is configured to guide at least four external terminals (leads) near a corner of the semiconductor device.

The positioning groove is configured to guide a package of the semiconductor device.

[0015] The surface of the electrode provided in the positioning groove is configured to make a multipoint contact with an external terminal (lead) of the semiconductor device.

The electrodes are in multiple contact with each other via an anisotropic conductive layer (anisotropic conductive mat) having conductivity in the thickness direction of the substrate.

According to the above-described means, a substrate including a positioning groove for positioning the semiconductor device, an electrode provided in the positioning groove and electrically connected to the semiconductor device, and a substrate mounted on the substrate By using a burn-in board having a pressing portion for pressing the semiconductor device, and a holding lid including a heat radiating hole provided along the pressing portion, a positioning groove of the burn-in board can be used without using a socket. When the semiconductor device is positioned at the predetermined position, the semiconductor device is pressed by the pressing portion of the holding lid, and the semiconductor device is securely electrically connected to the electrode of the positioning groove of the burn-in substrate and fixed at the predetermined position. it can. Further, by using a burn-in board that does not use a socket, the manufacturing cost can be reduced.

The positioning groove may be configured to guide at least four external terminals near a corner of the semiconductor device, or may be configured to guide a package of the semiconductor device. It can be positioned well with respect to the device.

Further, by configuring the surface of the electrode provided in the positioning groove so as to make multipoint contact with the external terminal of the semiconductor device, it is possible to reduce wear of the electrode surface of the burn-in substrate, The life of the burn-in substrate can be extended. Furthermore, the surface of the electrode is configured to make multipoint contact via an anisotropic conductive layer having conductivity in the thickness direction of the substrate, so that the anisotropic conductive layer reduces the variation in height of the semiconductor device. The semiconductor device and the electrode can be favorably brought into contact with each other.

[0020]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments of the present invention, components having the same functions are denoted by the same reference symbols, and their repeated description is omitted.

(Embodiment 1) In this embodiment, for example, S
A case where the present invention is applied to a burn-in technique for a semiconductor device having an OP (Small Outline Package) structure will be described below.

As shown in FIG. 14, a semiconductor device 22, which is an object to be processed by the burn-in technique according to the present embodiment, has a package 23 made of a resin having a substantially rectangular shape, and a package 23 made of two opposite sides of the package 23. It is composed of a plurality of protruding leads 24. The leads 24 extend into and out of the package 23 and are formed in a gull-wing type. A tab (not shown) is arranged inside the package 23, and a semiconductor chip (not shown) on which a predetermined circuit is formed is fixed. In the semiconductor chip, the ends of the leads extending into the package 23 are electrically connected via conductive wires.
As described above, a burn-in test is generally performed on a semiconductor device to apply an electrical load to make a defect in a manufacturing process completely defective.

Next, a burn-in substrate according to an embodiment of the present invention used in the burn-in test will be described. As shown in FIG. 1, the burn-in substrate 1 is overlapped with a substrate 2 formed in a substantially rectangular plate shape and a holding lid 3 corresponding to the substrate 2 so that the semiconductor device mounted on the substrate 2 is fixed and electrically connected. It is configured to apply a load. The substrate 2 is, as shown in FIGS.
A positioning groove 4 for positioning and mounting a semiconductor device 22 to be processed in a burn-in test is formed on one surface of the semiconductor device 2.
2 are provided. In the present embodiment, the plurality of positioning grooves 4 are integrally formed corresponding to each of the leads of the semiconductor device, and the plurality of positioning grooves 4 integrally formed corresponding to the one semiconductor device are , And is configured to guide each lead 24 of the semiconductor device 22. The depth and shape of the positioning groove 4 are appropriately selected depending on conditions such as the outer diameter of the package of the semiconductor device to be subjected to the burn-in test. Electrodes 5 are embedded in the positioning grooves 4, respectively, and are electrically connected to the leads 24 of the semiconductor device 22 positioned and mounted in the positioning grooves 4. The electrode 5 is electrically connected to an electrode terminal portion 6 provided on a side portion of the substrate 2 through a wiring or the like on the substrate 2. The semiconductor device is configured so that an electric load can be applied to the semiconductor device. In this way, a plurality of integrated positioning grooves 4 corresponding to the one semiconductor device 22 are arranged on the substrate 2 with a certain interval. At a predetermined position near, for example, four corners of the substrate portion 2, a convex portion 7 for positioning the holding lid 3 at a predetermined position is formed.

As shown in FIGS. 4 and 5, when the holding lid 3 is overlapped with the substrate 2,
A pressing portion 8 is formed to press and fix the semiconductor device 22 positioned and mounted on the electrode 5. The pressing portion 8 is provided so as to press, for example, the surface of the package 23 of the semiconductor device 22 mounted on the substrate 2. In addition, the pressing portion 8 is connected to the semiconductor device 2.
Any material may be used as long as the material 2 can be pressed against the electrode 5, and for example, a rigid material such as a metal or an elastic material such as a rubber plate may be used. Further, the pressing portion 8 may be configured to press the lead 24 of the semiconductor device 22.
A plurality of heat radiating holes 9 having a predetermined size are formed in the holding lid 3 corresponding to the semiconductor device 22 mounted on the substrate 2. The heat radiating holes 9 release heat generated during the burn-in test of the semiconductor device. A hole 10 for engaging the convex portion is formed at a corner corresponding to the convex portion of the substrate 2, that is, at a position corresponding to the convex portion of the substrate 2. It can be superposed corresponding to the substrate 2. Further, a lock mechanism 11 is provided on a side portion of the holding lid 3, and is configured to hold a state where the substrate 2 and the holding lid 3 are overlapped.

Next, a burn-in method for a semiconductor device according to an embodiment of the present invention will be briefly described. The semiconductor device 22 that has been assembled as described above is mounted in the positioning groove 4 formed on the substrate 2 of the burn-in substrate 1 by using, for example, an automatic stuffing machine, as shown in FIG. At this time, the semiconductor device 22 mounted on the substrate 2
Are mounted at predetermined positions by guiding the leads 24 of the semiconductor device 22. The leads 24 of the semiconductor device 22 mounted on the substrate 2 are positioned and mounted on the electrodes 5 provided in the positioning grooves 4. The burn-in board 1 on which the predetermined number of semiconductor devices 22 are mounted as described above,
The projections 7 of the substrate 2 and the holes 10 of the holding lid 3 are engaged with each other in a state of being engaged. At this time, the semiconductor device 22 positioned and mounted on the burn-in substrate 1 is pressed against the upper surface of the package 23 of the semiconductor device 22 by the pressing portion 8 of the holding lid 3 as shown in FIG. As described above, the semiconductor device 22 is pressed by the pressing portion 8 in a state where the semiconductor device 22 is positioned at the predetermined position of the positioning groove 4 of the burn-in substrate 1, so that the leads 24 of the semiconductor device 22 are positioned in the positioning groove 4 of the burn-in substrate 1. Can be reliably and electrically connected to the electrode 5 provided on the substrate. The burn-in substrate 1 is held by the lock mechanism 11 of the holding lid 3 in a state where the semiconductor device is electrically connected. Thus, the semiconductor device 2
An electrical load is applied to the burn-in board 1 held and fixed by a burn-in device 12 configured as described later.

As shown in FIG. 8, the burn-in apparatus 12 for processing the burn-in substrate 1 comprises, for example, a box-shaped base 13, a processing unit 14 for performing a burn-in test on the burn-in substrate 1, and a control unit 15. I have. The processing section 14 has an access port 16 through which the burn-in substrate 1 is inserted and removed. Further, a shutter mechanism 17 is provided at the entrance 16 so that the inside of the processing unit 14 can be maintained at a high temperature or the like during a burn-in test of the semiconductor device. The processing unit 1
A plurality of guide rails 18 are provided inside 4, and a plurality of the burn-in substrates 1 are held at predetermined positions inside the processing unit 14. Further, connectors 19 are respectively provided on the inner side of the processing unit 14 corresponding to the guide rails 18 of the burn-in board 1, and the burn-in board 1 held by the guide rails 18 of the processing unit 14 is provided. The electrode terminal 6 is connected to the connector 19
It is configured to be connected to.

The burn-in board 1 on which the semiconductor device 22 is mounted is held by the guide rails 18 provided in the processing chamber 14 of the burn-in apparatus 12, and the electrode terminals 6 of the burn-in board 1 It is connected to the connector 19 provided on the back side of the processing chamber 14. Similarly, a plurality of the burn-in substrates 1 are set on a guide rail 18 in the processing chamber 14, and the processing chamber 1 is moved by a shutter mechanism 18 of the burn-in device 12.
4 is sealed. Thereafter, the inside of the processing chamber 14 is maintained at a high temperature, for example, about 120 ° C. by the burn-in device 12, and a voltage of about 1.2 times the normal voltage is applied to the semiconductor device mounted on the burn-in substrate 1 through the burn-in substrate 1. Is added, and is left in the processing chamber for about 12 hours in that state.

A predetermined test of the semiconductor device 22 is performed on the burn-in substrate 1 on which the burn-in test has been completed, and the semiconductor device is determined to be a good product or a defective product. Then, the burn-in substrate 1 is taken out of the processing chamber 14, and the holding lid 3 is removed from the substrate 2. Then, the semiconductor device 22 after the burn-in test of the burn-in substrate 1 is transferred to a storage jig by an automatic stuffing machine or the like. When the semiconductor device 22 is extracted from the burn-in substrate 1, the non-defective semiconductor device and the defective semiconductor device are selected based on the result of the burn-in test. The non-defective semiconductor device 22 is subjected to processing such as marking, and a highly reliable semiconductor device is formed.

Therefore, in this embodiment, the semiconductor device is mounted in the positioning groove 4 formed on the substrate 2 without using a socket, and the semiconductor device is held by the holding lid 3 having a pressing portion 8 corresponding to the semiconductor device. Of the burn-in board 1 can be reduced by using the burn-in board 1 configured to be pressed against the board 2, without adding or improving a mechanism to the burn-in apparatus 13. Further, since the burn-in board 1 is transported in a state where the semiconductor device is securely positioned and fixed to the burn-in board 1 by the holding lid 3 having the pressing portion 8, the semiconductor device generated with the transport of the burn-in board Of the lead can be prevented.

Further, the burn-in substrate 1 according to the present embodiment
In this case, the leads 24 of the semiconductor device and the electrodes 5 formed in the positioning grooves 4 of the substrate 2 are in contact by surface contact, and stable contact is possible.

In this embodiment, since the burn-in board 1 having no socket is used, the socket shape is deformed due to self-heating of the semiconductor device during the burn-in test, and the semiconductor accompanying the socket shape is deformed. It is possible to reduce the occurrence of deformation of the leads of the device, to shorten the mounting interval of the semiconductor device on the burn-in board, and to measure the number of semiconductor devices mounted on one burn-in board, that is, simultaneous measurement. The number can be increased.

(Embodiment 2) FIG. 9 is a sectional view showing a main part of a burn-in substrate 1 according to another embodiment of the present invention.

In the burn-in substrate 1 according to another embodiment of the present invention, the surface of the electrode 5 provided in the positioning groove 4 for positioning and mounting the semiconductor device is configured to make a multipoint contact. An anisotropic conductive mat 20 is provided on the surface of the electrode 5 of the burn-in substrate 1. The anisotropic conductive mat 20 is configured such that gold wires are embedded in silicone rubber, for example, and has conductivity in the thickness direction of the substrate. The surface of the electrode 5 of the burn-in substrate 1 is multi-point contacted with diamond powder or the like, or an ACF (Anisotropic Co.)
For example, a multi-point contact may be made using an nductive film).

As described above, the electrode 5 of the burn-in substrate 1
By configuring the surface to be in multipoint contact, the wear of the electrode 5 of the burn-in substrate 1 can be reduced, and the durability can be improved. Further, the anisotropic conductive mat 2
With 0, variations in the height of the leads of the semiconductor device 22 can be absorbed to some extent, and the electrodes 5 of the burn-in substrate 1 and the leads 24 of the semiconductor device 22 can be brought into better electrical contact.

Although the invention made by the inventor has been specifically described based on the embodiment, the invention is not limited to the above embodiment, and various modifications can be made without departing from the gist of the invention. Needless to say. For example, in this embodiment, the semiconductor device 22 mounted on the burn-in
Are configured to guide the leads of FIG.
0 (a) and (b), a positioning groove 4 for guiding at least four leads 24 near at least a corner of the semiconductor device 22 and a groove 2 for arranging other leads 24 are provided.
1 may be provided to guide the semiconductor device. Further, as shown in FIGS. 11A and 11B, the semiconductor device may be guided by a positioning groove 4 formed to guide the package 23 of the semiconductor device 22. As described above, the positioning groove 4 is connected to the semiconductor device 2.
By arranging at least four leads 24 in the vicinity of the second corner or the package 23 of the semiconductor device 22, the semiconductor device can be positioned well even with a narrow lead interval.

The positioning groove 4 of the burn-in substrate 1
Are formed so as to correspond to the respective leads 24 of the semiconductor device 22 having the SOP structure mounted on the burn-in board. As shown in FIG.
By forming the positioning groove 4 long in the extending direction of the lead 24, the semiconductor device having the SOP structure and the SOJ (Small Outline J-
It is also possible to share a semiconductor device having a leaded package structure with one burn-in substrate 1. Further, in the present embodiment, the burn-in substrate 1 applied to the semiconductor device having the SOP structure has been described.
Various types of semiconductor devices can be applied as long as they are surface-mount type semiconductor devices such as a lat package) and a BGA (Ball Grid Array).

[0037]

The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

That is, a substrate provided with a positioning groove for positioning the semiconductor device, an electrode provided in the positioning groove and electrically connected to the semiconductor device, and the semiconductor device mounted on the substrate. By using a burn-in substrate having a pressing portion that presses, and a holding lid made of a heat radiation hole formed along the pressing portion,
The semiconductor device can be brought into good contact with the electrodes of the burn-in substrate without using a socket, and a highly reliable burn-in test can be performed. Further, since no socket is used for the burn-in board, the manufacturing cost of the burn-in board can be reduced, and the manufacturing cost of the semiconductor device can be reduced.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an entire structure of a burn-in substrate of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a schematic plan view showing a burn-in substrate according to one embodiment of the present invention.

FIG. 3 is a plan view of a principal part showing a mounting portion of a semiconductor device which is an object to be processed on a burn-in substrate according to an embodiment of the present invention;

FIG. 4 is a schematic plan view showing a cover for a burn-in substrate according to an embodiment of the present invention.

FIG. 5 is a cross-sectional view of a main part showing a relationship between a mounting portion of the semiconductor device of the burn-in substrate according to the embodiment of the present invention and a holding lid;

FIG. 6 is a plan view showing a relationship between the burn-in substrate and a semiconductor device according to one embodiment of the present invention.

FIG. 7 is a cross-sectional view illustrating a relationship between the burn-in substrate and a semiconductor device according to an embodiment of the present invention.

FIG. 8 is a schematic configuration diagram of a burn-in apparatus for processing a burn-in substrate according to an embodiment of the present invention.

FIG. 9 is a sectional view showing a burn-in substrate according to another embodiment of the present invention.

FIG. 10 is a plan view showing another shape of the positioning groove of the burn-in substrate of the semiconductor device according to the present invention.

FIG. 11 is a plan view showing another shape of the positioning groove of the burn-in substrate of the semiconductor device according to the present invention.

FIG. 12 shows a burn-in substrate according to an embodiment of the present invention,
It is sectional drawing in which the semiconductor device of OJ structure was mounted.

FIG. 13 is a perspective view showing a semiconductor device which is an object to be processed by the burn-in device according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Burn-in board, 2 ... Board, 3 ... Holder lid, 4 ... Positioning groove, 5 ... Electrode, 6 ... Electrode terminal part, 7 ... Convex part, 8 ...
Pressing portion, 9: heat dissipation hole, 10: hole portion, 11: lock mechanism,
12 burn-in device, 13 substrate, 14 processing unit, 1
5: control unit, 16: doorway, 17: shutter mechanism, 18: guide rail, 19: connector, 20: anisotropic conductive mat (anisotropic conductive layer), 21: groove, 22: semiconductor device, 23: package, 24 Leads (external terminals).

Claims (6)

[Claims] A burn-in board for electrically connecting a plurality of semiconductor devices and applying an electrical load to the semiconductor devices, a positioning groove for positioning the semiconductor device, and a semiconductor device provided in the positioning groove. It has a substrate composed of electrodes that are electrically connected, a pressing portion that presses the semiconductor device mounted on the substrate, and a holding lid that includes a heat radiation hole provided along the pressing portion. A burn-in substrate for a semiconductor device, comprising: 2. The burn-in substrate for a semiconductor device according to claim 1, wherein the positioning groove is configured to guide at least four external terminals near a corner of the semiconductor device. 3. The burn-in board for a semiconductor device according to claim 1, wherein said positioning groove is configured to guide a package of said semiconductor device. 4. The burn-in substrate for a semiconductor device according to claim 1, wherein the surface of the electrode provided in the positioning groove is configured to make a multipoint contact with an external terminal of the semiconductor device. . 5. The burn-in substrate for a semiconductor device according to claim 4, wherein said electrodes are contacted at multiple points via an anisotropic conductive layer having conductivity in a thickness direction of said substrate. 6. A burn-in method for electrically connecting a plurality of semiconductor devices and applying an electrical load to the semiconductor devices, wherein a positioning groove for positioning the semiconductor device, and a semiconductor device provided in the positioning groove. A burn-in having a substrate composed of electrodes that are electrically connected, a pressing part configured to press the semiconductor device mounted on the substrate, and a holding lid including a heat radiation hole provided along the pressing part. Preparing a substrate, mounting a semiconductor device in the positioning groove of the burn-in substrate, holding and fixing the semiconductor device mounted in the positioning groove to the substrate with the holding lid, Applying an electrical load to the semiconductor device via the burn-in substrate held and fixed.