JPH11111524A - Magnetic recording medium, magnetic alloy film and sputtering target - Google Patents

Magnetic recording medium, magnetic alloy film and sputtering target

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Publication number
JPH11111524A
JPH11111524A JP26747097A JP26747097A JPH11111524A JP H11111524 A JPH11111524 A JP H11111524A JP 26747097 A JP26747097 A JP 26747097A JP 26747097 A JP26747097 A JP 26747097A JP H11111524 A JPH11111524 A JP H11111524A
Authority
JP
Japan
Prior art keywords
magnetic
atomic
film
recording medium
magnetic recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP26747097A
Other languages
Japanese (ja)
Inventor
Akira Sakawaki
彰 坂脇
Hiroshi Kanazawa
博 金澤
Kazunori Onami
一徳 大浪
Hiroshi Sakai
浩志 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP26747097A priority Critical patent/JPH11111524A/en
Publication of JPH11111524A publication Critical patent/JPH11111524A/en
Withdrawn legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a magnetic recording medium having a high coercive force and a low noise, by using a magnetic film formed by adding an appropriate quantity of Zr to a CoCrPtTa four-element alloy. SOLUTION: A magnetic film is made of a CoCrPtTaZr alloy containing Cr at 10 to 26 at.%, Pt at 1 to 16 at.%, Ta at 1 to 7 at.%, Zr at 0.5 to 4 at.%, and Co substantially for the remaining part. In a working example, after texturing with a surface roughness Ra of 1.5 nm is carried out on a Ni-P plated Al substrate, the Al substrate is set in a DC magnetron sputtering device. Next, after evacuation is carried out to an ultimate vacuum of 2×10<7> Torr, a film of Cr85W15 (at.%) is formed to 15 nm as an underlying film, and subsequently, a magnetic film is formed by using a sintered alloy target having a composition of Co69Cr18Pt9Ta2Zr2 (at.%). The thickness of the magnetic film is equal to the product (Br.t) of the residual magnetization density (Br) and the thickness thereof (t), that is, 115 G.μm. The Ar pressure at the formation of film is 3 mmTorr.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、磁気記録媒体に関
するものであり、特に、磁気ディスク装置、フロッピー
ディスク装置等の磁気記録装置に用いられる磁気記録媒
体に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording medium, and more particularly to a magnetic recording medium used for a magnetic recording device such as a magnetic disk device and a floppy disk device.

【0002】[0002]

【従来の技術】近年、磁気ディスク装置等の高記録密度
化に伴い、再生感度の高い磁気抵抗効果を用いた磁気ヘ
ッド(以下、MRヘッドという)に適合した磁気記録媒
体が必要とされている。MRヘッドは通常、磁性膜の残
留磁化密度(Br)とその膜厚(t)の積(Br・t)
が250(G・μm)以下の磁気ディスクに対して好適
である。
2. Description of the Related Art In recent years, as the recording density of a magnetic disk device and the like has increased, a magnetic recording medium suitable for a magnetic head (hereinafter, referred to as an MR head) using a magnetoresistive effect having high reproduction sensitivity has been required. . An MR head usually has a product (Br · t) of the residual magnetization density (Br) of the magnetic film and its thickness (t).
Is suitable for a magnetic disk having a thickness of 250 (Gm) or less.

【0003】一方、MRヘッドでの使用に耐えうる磁気
ディスクとして、磁性膜に磁性膜にCoCrPtTa4
元系合金、さらに第5の元素としてWを加えたCoCr
PtTaW5元系合金を使用した磁気ディスクが提案さ
れている(例えば、特開平9−147343号)。これ
ら提案されたMR用磁気ディスクでは、Co以外の元素
の組成を変化させることにより、特性を制御できる利点
がある。
On the other hand, as a magnetic disk which can be used in an MR head, CoCrPtTa4 is used as a magnetic film.
Base alloy, CoCr with W added as the fifth element
A magnetic disk using a PtTaW pentagonal alloy has been proposed (for example, Japanese Patent Application Laid-Open No. 9-147343). These proposed MR magnetic disks have the advantage that the characteristics can be controlled by changing the composition of elements other than Co.

【0004】[0004]

【発明が解決しようとする課題】MRヘッドは、電磁誘
導型の磁気ヘッドに比べてヘッドノイズが低いため、磁
気ディスク装置全体の信号対ノイズ比(S/N)を改善
するためには、磁気記録媒体のノイズの低減が極めて重
要な課題となっている。上記の4元系、5元系合金で
は、Ptの添加量を増加させることにより高保磁力(H
c)が得られるが、Ptの添加量を増加させるとノイズ
が高くなるという問題がある。そこで本発明は、高保磁
力(Hc)、低ノイズの磁気記録媒体の提供を課題とす
る。
Since the MR head has a lower head noise than the electromagnetic induction type magnetic head, it is necessary to improve the signal-to-noise ratio (S / N) of the entire magnetic disk drive by using a magnetic head. Reducing the noise of the recording medium has become a very important issue. In the above quaternary and quinary alloys, a high coercive force (H
Although c) is obtained, there is a problem that the noise increases when the added amount of Pt is increased. Therefore, an object of the present invention is to provide a magnetic recording medium having high coercive force (Hc) and low noise.

【0005】[0005]

【課題を解決するための手段】本発明者はCoCrPt
Ta4元系合金に加える第5元素について検討を行った
ところ、Zrを適量添加した磁性膜を用いることによ
り、高保磁力(Hc)、低ノイズの磁気記録媒体が得ら
れることを知見した。本発明の磁気記録媒体はこの知見
に基づきなされたものであり、非磁性基板、非磁性下地
膜、磁性膜及び保護膜を基本構成とする磁気記録媒体に
おいて、前記磁性膜が、Cr10〜26原子%、Pt1
〜16%、Ta1〜7原子%、Zr0.5〜4原子%、
残部実質的にCoからなる合金であることを特徴とす
る。
The inventor of the present invention has proposed CoCrPt.
When the fifth element added to the Ta quaternary alloy was examined, it was found that a magnetic recording medium with high coercive force (Hc) and low noise could be obtained by using a magnetic film to which an appropriate amount of Zr was added. The magnetic recording medium of the present invention has been made based on this finding. In a magnetic recording medium having a non-magnetic substrate, a non-magnetic base film, a magnetic film, and a protective film as a basic structure, the magnetic film has 10 to 26 atoms of Cr. %, Pt1
~ 16%, Ta1 ~ 7at%, Zr0.5 ~ 4at%,
The balance is characterized by being substantially an alloy of Co.

【0006】以下本発明をさらに詳細に説明する本発明
に用いられる非磁性基板としては、磁気記録媒体用基板
として一般的に用いられているNiPメッキ膜が形成さ
れたAl合金基板(以下、NiPメッキAl基板)に加
え、表面平滑性に優れるガラス基板、単結晶シリコン基
板等を用いることができる。
The non-magnetic substrate used in the present invention, which will be described in further detail below, is an Al alloy substrate (hereinafter referred to as NiP) having a NiP plating film, which is generally used as a substrate for a magnetic recording medium. In addition to a plated Al substrate, a glass substrate having excellent surface smoothness, a single crystal silicon substrate, or the like can be used.

【0007】非磁性基板は、好ましくは、常法に従いテ
クスチャー加工を行った後に使用に供される。また、必
要に応じ、テクスチャー加工後にバリやカエリ等を除去
するための仕上げ加工として化学エッチングまたは電解
エッチング(電解研磨)処理を行うこともできる。さら
に、上記加工後に基板表面に形成された自然酸化膜や汚
染吸着物質を除去するために、下地膜を成膜する直前に
真空中でRFプラズマに晒すことも有効である。
[0007] The non-magnetic substrate is preferably used after being textured according to a conventional method. If necessary, chemical etching or electrolytic etching (electropolishing) can be performed as a finishing process for removing burrs and burrs after the texturing process. Further, in order to remove a natural oxide film and a contaminant adsorbed substance formed on the substrate surface after the above-described processing, it is also effective to expose the substrate film to RF plasma in vacuum immediately before forming the base film.

【0008】MRヘッド用の磁気記録媒体においては、
記録密度向上に伴い、ヘッドの低フライングハイト化が
要求されているため、従来に比べて基板表面の高い平滑
性が要求される。したがって、本発明に用いられる非磁
性基板にあっては平均表面粗さRaが2nm以下である
ことが望ましい。
In a magnetic recording medium for an MR head,
As the recording density is improved, the flying height of the head is required to be lower, so that the substrate surface is required to have higher smoothness than in the past. Therefore, it is desirable that the non-magnetic substrate used in the present invention has an average surface roughness Ra of 2 nm or less.

【0009】非磁性基板上に形成される下地膜は、従来
公知の非磁性下地膜、例えば、Cr、Ti、Ni、S
i、Ta、W等の単一組成膜、または、それらの結晶性
を損なわない範囲で他の元素を含有する合金を使用する
ことができるが、本発明の磁性膜との関係ではCr−5
〜60原子%W合金を用いるのが望ましい。また、下地
膜は一層のみから構成する場合のみならず、必要に応じ
て同一組成の膜、または異なる組成の膜を複数積層させ
た多層構造としてもよい。下地膜の厚さは、1〜200
nm、好ましくは2〜100nmである。
The underlayer formed on the nonmagnetic substrate may be a conventionally known nonmagnetic underlayer such as Cr, Ti, Ni, S
A single-composition film such as i, Ta, W or the like, or an alloy containing other elements within a range that does not impair the crystallinity thereof can be used. However, in relation to the magnetic film of the present invention, Cr-5 is used.
It is desirable to use a 6060 at% W alloy. Further, the base film is not limited to a single-layer structure, and may have a multilayer structure in which a plurality of films having the same composition or different compositions are stacked as necessary. The thickness of the underlayer is 1 to 200
nm, preferably 2 to 100 nm.

【0010】磁性膜は、CoCrPtTaZr合金で構
成されるが、Cr10〜26原子%、Pt1〜16%、
Ta1〜7原子%、Zr0.5〜4原子%、残部実質的
にCoからなる合金であることが重要である。各々好ま
しい範囲は、Cr12〜22原子%、Pt3〜10%、
Ta2〜6原子%、Zr1〜3原子%であり、Coは6
5ないし85原子%の範囲にあることが好ましい。斯か
る特定組成のCoCrPtTaZr合金とすることによ
り、高保磁力(Hc)かつ低ノイズの磁気記録媒体を得
ることができる。
[0010] The magnetic film is made of a CoCrPtTaZr alloy, and contains 10 to 26 atomic% of Cr, 1 to 16% of Pt,
It is important that the alloy is composed of Ta 1 to 7 atomic%, Zr 0.5 to 4 atomic%, and the balance substantially Co. The preferred ranges are respectively 12 to 22 atomic% of Cr, 3 to 10% of Pt,
Ta is 2 to 6 atomic%, Zr is 1 to 3 atomic%, and Co is 6 atomic%.
It is preferably in the range of 5 to 85 atomic%. By using a CoCrPtTaZr alloy having such a specific composition, a magnetic recording medium having high coercive force (Hc) and low noise can be obtained.

【0011】Crを10〜26原子%とするのは、10
原子%未満ではCrの偏析によりCo粒子の分散が不十
分であり、26原子%を超えると保磁力(Hc)の低下
が著しくなり、MRメディアに適さなくなる傾向がある
からである。Ptを1〜16%とするのは、1原子%未
満では高い保磁力(Hc)が得られないからであり、1
6原子%を超えるとノイズが大きくなる傾向にあるから
である。
The reason why the content of Cr is set to 10 to 26 at% is 10
If the amount is less than atomic%, the dispersion of the Co particles is insufficient due to the segregation of Cr, and if it exceeds 26 atomic%, the coercive force (Hc) tends to be remarkably reduced, and it tends to be unsuitable for MR media. Pt is set to 1 to 16% because a high coercive force (Hc) cannot be obtained at less than 1 atomic%.
If it exceeds 6 atomic%, the noise tends to increase.

【0012】Taを1〜7原子%にするのは、1原子%
未満ではノイズが増加する傾向にあるからであり、7原
子%を超えると高い保磁力(Hc)を得ることが困難と
なるからである。また、Zrを0.5〜4原子%にする
のは、0.5原子%未満ではノイズが増加する傾向にあ
るからであり、4原子%を超えると高い保磁力(Hc)
を得ることが困難となるからである。
The reason for making Ta 1 to 7 atomic% is 1 atomic%.
If it is less than 7, the noise tends to increase, and if it exceeds 7 atomic%, it becomes difficult to obtain a high coercive force (Hc). The reason why Zr is set to 0.5 to 4 atomic% is that noise tends to increase when it is less than 0.5 atomic%, and when it exceeds 4 atomic%, a high coercive force (Hc) is obtained.
Is difficult to obtain.

【0013】磁性膜の厚さは、特に限定されるものでは
ないが、MRヘッド用の磁気記録媒体の場合には、残留
磁化密度(Br)とその膜厚(t)の積(Br・t)が
50〜150G・μmの範囲内になるように調整するこ
とが望ましい。残留磁化密度(Br)とその膜厚(t)
の積(Br・t)が50G・μm未満では適切な出力が
得られにくく、150G・μmを超えるとMRメディア
に適した特性が得られにくくなるからである。
Although the thickness of the magnetic film is not particularly limited, in the case of a magnetic recording medium for an MR head, the product (Br · t) of the residual magnetization density (Br) and its thickness (t) is used. ) Is desirably adjusted to fall within the range of 50 to 150 G · μm. Residual magnetization density (Br) and its film thickness (t)
If the product (Br · t) is less than 50 G · μm, it is difficult to obtain an appropriate output, and if it exceeds 150 G · μm, it becomes difficult to obtain characteristics suitable for MR media.

【0014】磁性膜は、下地膜等と同様にスパッタリン
グ法により成膜できるが、その際Cr10〜26原子
%、Pt1〜16%、Ta1〜7原子%、Zr0.5〜
4原子%、残部実質的にCoからなる溶製法による合金
ターゲット、望ましくは焼結合金ターゲットを用いる。
この焼結合金ターゲットは、最終目標組成の合金粉末、
あるいは最終目標組成となるような複数の合金粉末、単
体金属粉末を用い、HIP(熱間静水圧プレス)、ホッ
トプレス等の従来公知の焼結法により製造することがで
きる。また合金粉末、金属粉末も、ガスアトマイズ法等
の従来公知の方法により製造することができる。
The magnetic film can be formed by a sputtering method in the same manner as the underlayer film and the like. In this case, Cr is 10 to 26 atomic%, Pt is 1 to 16%, Ta is 1 to 7 atomic%, Zr is 0.5 to 0.5 atomic%.
An alloy target, preferably a sintered alloy target, made by a smelting method comprising 4 atomic% and the balance substantially consisting of Co is used.
This sintered alloy target is an alloy powder of the final target composition,
Alternatively, it can be manufactured by a conventionally known sintering method such as HIP (Hot Isostatic Press) or Hot Press using a plurality of alloy powders and single metal powders having the final target composition. Alloy powders and metal powders can also be produced by a conventionally known method such as a gas atomizing method.

【0015】本発明磁気記録媒体においては、ヘッドと
媒体表面の接触による損傷を防ぐため、磁性膜の上に保
護膜を形成する。保護膜を構成する物質としては従来公
知のものでよく、例えば、C、SiO2、ZrO2等の単
一成分またはそれぞれを主成分とする膜を使用すること
ができる。保護膜の厚さは、通常2〜20nmとされ
る。保護膜の表面には、必要に応じ、潤滑膜を形成する
こともできる。潤滑剤としては、PFPE(パーフルオ
ロポリエーテル)等の弗化系液体潤滑剤、脂肪酸等の個
体潤滑剤が使用される。
In the magnetic recording medium of the present invention, a protective film is formed on the magnetic film in order to prevent damage due to contact between the head and the medium surface. As a material constituting the protective film, a conventionally known material may be used, and for example, a single component such as C, SiO 2 , ZrO 2 or a film mainly containing each component can be used. The thickness of the protective film is usually 2 to 20 nm. A lubricating film may be formed on the surface of the protective film, if necessary. As the lubricant, a fluorinated liquid lubricant such as PFPE (perfluoropolyether) or a solid lubricant such as a fatty acid is used.

【0016】[0016]

【発明の実施の形態】以下、実施例および比較例を挙げ
て本発明を詳細に説明するが、本発明はその範囲を超え
ない限り、以下の実施例に限定されるものではない。 (実施例1)Ni−PメッキAl基板に、表面粗さRa
1.5nmのテクスチャリングを施した後、DCマグネ
トロンスパッタ装置内にセットした。次に、到達真空度
2×10-7Torrまで排気した後、下地膜としてCr
85W15(原子%、以下同じ)を15nm成膜し、引き続
きCo69Cr18Pt9Ta2Zr2の組成を有する焼結体
合金ターゲットを用い磁性膜を成膜した。磁性膜の厚さ
は残留磁化密度(Br)とその膜厚(t)の積(Br・
t)で115G・μmであった。また、成膜時のAr圧
力は、各々3mmTorrとした。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to examples and comparative examples, but the present invention is not limited to the following examples unless it exceeds the scope. (Example 1) Surface roughness Ra was applied to a Ni-P plated Al substrate.
After texturing of 1.5 nm, it was set in a DC magnetron sputtering apparatus. Next, after evacuating to an ultimate vacuum of 2 × 10 −7 Torr, Cr was used as a base film.
A film of 85 W15 (atomic%, hereinafter the same) was formed to a thickness of 15 nm, and subsequently a magnetic film was formed using a sintered alloy target having a composition of Co69Cr18Pt9Ta2Zr2. The thickness of the magnetic film is determined by the product of the residual magnetization density (Br) and its thickness (t) (Br ·
At t), it was 115 G · μm. The Ar pressure during film formation was 3 mmTorr.

【0017】以上のようにして作成した磁気記録媒体の
磁気特性を、振動式磁気特性装置(VSM)を用いて測
定したところ、保磁力(Hc)は2918Oe、保磁力
角型比(S*)は85.0%であった。また、記録再生
におけるノイズ特性を、再生部にMR素子を有する複合
型薄膜磁気ヘッドを用い、線記録密度148.5KFC
Iにて測定したところ、2.31μVであった。
When the magnetic characteristics of the magnetic recording medium prepared as described above were measured using a vibration type magnetic characteristic device (VSM), the coercive force (Hc) was 2918 Oe, and the coercive force squareness ratio (S *). Was 85.0%. In addition, the noise characteristics in recording / reproducing were measured by using a composite type thin film magnetic head having an MR element in a reproducing section and a linear recording density of 148.5 KFC.
It was 2.31 μV when measured at I.

【0018】(実施例2)磁性膜をCo69Cr18Pt9
Ta5Zr1合金とした以外は実施例1と同様にして磁気
記録媒体を作成した。この磁気記録媒体の磁気特性およ
び記録再生特性も実施例1と同様に測定したところ、保
磁力(Hc)2862Oe、保磁力角型比(S*)8
2.2%、記録再生におけるノイズは2.21μVであ
った。
(Embodiment 2) The magnetic film is made of Co69Cr18Pt9.
A magnetic recording medium was prepared in the same manner as in Example 1 except that the alloy was a Ta5Zr1 alloy. When the magnetic characteristics and recording / reproducing characteristics of this magnetic recording medium were measured in the same manner as in Example 1, the coercive force (Hc) 2862 Oe and the coercive force squareness ratio (S *) 8
2.2%, and noise during recording and reproduction was 2.21 μV.

【0019】(実施例3)磁性膜をCo69Cr18Pt9
Ta1Zr3合金とした以外は実施例1と同様にして磁気
記録媒体を作成した。この磁気記録媒体の磁気特性およ
び記録再生特性も実施例1と同様に測定したところ、保
磁力(Hc)2875Oe、保磁力角型比(S*)8
6.3%、記録再生におけるノイズは2.21μVであ
った。
(Embodiment 3) The magnetic film is made of Co69Cr18Pt9.
A magnetic recording medium was prepared in the same manner as in Example 1, except that the alloy was Ta1Zr3. The magnetic characteristics and recording / reproducing characteristics of this magnetic recording medium were measured in the same manner as in Example 1. As a result, the coercive force (Hc) was 2875 Oe and the coercive force squareness (S *) was 8
6.3%, and noise in recording and reproduction was 2.21 μV.

【0020】(実施例4)下地膜をCr85Ti15とした
以外は実施例1と同様にして磁気記録媒体を作成した。
この磁気記録媒体の磁気特性および記録再生特性も実施
例1と同様に測定したところ、保磁力(Hc)2878
Oe、保磁力角型比(S*)83.3%、記録再生にお
けるノイズは2.35μVであった。
Example 4 A magnetic recording medium was prepared in the same manner as in Example 1 except that the underlayer was Cr85Ti15.
The magnetic characteristics and recording / reproducing characteristics of this magnetic recording medium were measured in the same manner as in Example 1, and the coercive force (Hc) was 2878.
Oe, the coercive force squareness ratio (S *) was 83.3%, and the noise during recording and reproduction was 2.35 μV.

【0021】(実施例5)下地膜をCr85Mo15とした
以外は実施例1と同様にして磁気記録媒体を作成した。
この磁気記録媒体の磁気特性および記録再生特性も実施
例1と同様に測定したところ、保磁力(Hc)2836
Oe、保磁力角型比(S*)81.8%、記録再生にお
けるノイズは2.37μVであった。
Example 5 A magnetic recording medium was prepared in the same manner as in Example 1 except that the underlayer was Cr85Mo15.
The magnetic characteristics and recording / reproducing characteristics of this magnetic recording medium were measured in the same manner as in Example 1, and the coercive force (Hc) 2836
Oe, the coercivity squareness ratio (S *) was 81.8%, and the noise during recording and reproduction was 2.37 μV.

【0022】(比較例1)Ni−PメッキAl基板に、
表面粗さRa1.5nmのテクスチャリングを施した
後、DCマグネトロンスパッタ装置内にセットした。次
に、到達真空度2×10-7Torrまで排気した後、下
地膜としてCr85W15を15nm成膜し、引き続き
Co70Cr18Pt9Ta3合金磁性膜を成膜した。磁性膜
の厚さは残留磁化密度(Br)とその膜厚(t)の積
(Br・t)で115G・μmであった。また、成膜時
のAr圧力は、各々3mmTorrとした。
(Comparative Example 1) Ni-P plated Al substrate
After texturing with a surface roughness Ra of 1.5 nm, the resultant was set in a DC magnetron sputtering apparatus. Next, after evacuation was performed to an ultimate vacuum of 2 × 10 −7 Torr, a Cr85W15 film was formed as a base film to a thickness of 15 nm, and a Co70Cr18Pt9Ta3 alloy magnetic film was formed. The thickness of the magnetic film was 115 G · μm as the product (Br · t) of the residual magnetization density (Br) and its thickness (t). The Ar pressure during film formation was 3 mmTorr.

【0023】この磁気記録媒体の磁気特性および記録再
生特性も実施例1と同様に測定したところ、保磁力(H
c)2815Oe、保磁力角型比(S*)83.1%、
記録再生におけるノイズは2.58μVであった。
The magnetic characteristics and recording / reproducing characteristics of this magnetic recording medium were measured in the same manner as in Example 1, and the coercive force (H
c) 2815 Oe, coercivity squareness ratio (S *) 83.1%,
The noise during recording and reproduction was 2.58 μV.

【0024】(比較例2)磁性膜としてCo64Cr18P
t9Ta3Zr6合金磁性膜を成膜した以外は比較例1と
同様にして磁気記録媒体を作成した。この磁気記録媒体
の磁気特性および記録再生特性も実施例1と同様に測定
したところ、保磁力(Hc)2584Oe、保磁力角型
比(S*)80.7%、記録再生におけるノイズは2.
49μVであった。
(Comparative Example 2) Co64Cr18P as a magnetic film
A magnetic recording medium was prepared in the same manner as in Comparative Example 1 except that a t9Ta3Zr6 alloy magnetic film was formed. The magnetic characteristics and recording / reproducing characteristics of this magnetic recording medium were measured in the same manner as in Example 1. As a result, the coercive force (Hc) was 2584 Oe, the coercive force squareness ratio (S *) was 80.7%, and the noise in recording / reproducing was 2.
It was 49 μV.

【0025】(比較例3)磁性膜としてCo69Cr18P
t9Ta2W2合金磁性膜を成膜した以外は比較例1と同
様にして磁気記録媒体を作成した。この磁気記録媒体の
磁気特性および記録再生特性も実施例1と同様に測定し
たところ、保磁力(Hc)2584Oe、保磁力角型比
(S*)84.8%、記録再生におけるノイズは2.6
3μVであった。
(Comparative Example 3) Co69Cr18P as a magnetic film
A magnetic recording medium was prepared in the same manner as in Comparative Example 1 except that a t9Ta2W2 alloy magnetic film was formed. The magnetic characteristics and recording / reproducing characteristics of this magnetic recording medium were measured in the same manner as in Example 1. As a result, the coercive force (Hc) was 2584 Oe, the coercive force squareness ratio (S *) was 84.8%, and the noise in recording / reproducing was 2. 6
It was 3 μV.

【0026】(比較例4)下地膜としてCrを60nm
成膜し、引き続き磁性膜としてCo79Cr16Ta5合金
磁性膜を成膜した以外は比較例1と同様にして磁気記録
媒体を作成した。この磁気記録媒体の磁気特性および記
録再生特性も実施例1と同様に測定したところ、保磁力
(Hc)1829Oe、保磁力角型比(S*)71.5
%、記録再生におけるノイズは2.59μVであった。
(Comparative Example 4) Cr is 60 nm as a base film
A magnetic recording medium was prepared in the same manner as in Comparative Example 1, except that a film was formed and subsequently a Co79Cr16Ta5 alloy magnetic film was formed as a magnetic film. The magnetic characteristics and recording / reproducing characteristics of this magnetic recording medium were measured in the same manner as in Example 1. As a result, the coercive force (Hc) was 1829 Oe and the coercive force squareness (S * ) was 71.5.
%, And noise in recording and reproduction was 2.59 μV.

【0027】以上の実施例1〜5、比較例1〜4の評価
結果を以下にまとめて示す。実施例1〜5は、2800
Oe以上の高い保磁力(Hc)であるとともに、ノイズ
が2.40μV未満という優れた特性を有していることがわ
かる。また、実施例1と実施例4、5を比較すると、下
地膜としてCrW合金を用いたほうが優れた特性が得ら
れることが判る。
The evaluation results of Examples 1 to 5 and Comparative Examples 1 to 4 are summarized below. Examples 1 to 5 are 2800
It can be seen that it has a high coercive force (Hc) of Oe or more and has excellent characteristics of noise of less than 2.40 μV. Also, comparing Example 1 with Examples 4 and 5, it can be seen that superior characteristics can be obtained by using a CrW alloy as the underlayer.

【0028】 下地膜 磁性膜 Hc S* ノイス゛ Br・t (原子%) (原子%) (Oe) (%) (μV) (G・μm) 実施例1 Cr85W15 Co69Cr18Pt9Ta2Zr2 2918 85.0 2.31 115 実施例2 Cr85W15 Co67Cr18Pt9Ta5Zr1 2862 82.2 2.21 115 実施例3 Cr85W15 Co75Cr18Pt9Ta1Zr3 2875 86.3 2.32 115 実施例4 Cr85Ti15 Co69Cr18Pt9Ta2Zr2 2878 83.3 2.35 115 実施例5 Cr85Mo15 Co69Cr18Pt9Ta2Zr2 2836 81.8 2.37 115 比較例1 Cr85W15 Co70Cr18Pt9Ta3 2815 83.1 2.58 115 比較例2 Cr85W15 Co64Cr18Pt9Ta3Zr6 2584 80.7 2.49 115 比較例3 Cr85W15 Co69Cr18Pt9Ta2W2 2544 84.8 2.63 115 比較例4 Cr Co79Cr16Ta5 1829 71.5 2.59 115Underlayer Magnetic film Hc S * Neuss ゛ Br · t (atomic%) (atomic%) (Oe) (%) (μV) (G · μm) Example 1 Cr85W15 Co69Cr18Pt9Ta2Zr2 2918 85.0 2.31 115 Example 2 Cr85W15 Co67Cr18Pt9Ta5Zr1 2862 82.2 2.21 115 Example 3 Cr85W15 Co75Cr18Pt9Ta1Zr3 2875 86.3 2.32 115 Example 4 Cr85Ti15 Co69Cr18Pt9Ta2Zr2 2878 83.3 2.35 115 Example 5 Cr85Mo15 Co69Cr18Pt9Ta2Zr2 2836 81.8 2.37115 Cr8P8 Cr3W82.55 815 Cr3W82.58 Cr3P8 2.58 Example 3 Cr85W15 Co69Cr18Pt9Ta2W2 2544 84.8 2.63 115 Comparative Example 4 Cr Co79Cr16Ta5 1829 71.5 2.59 115

【0029】[0029]

【発明の効果】以上説明のように、磁性膜として所定組
成のCoCrPtTaZr合金を用いることにより、高
保磁力(Hc)、低ノイズの磁気記録媒体が得られる。
As described above, a magnetic recording medium having a high coercive force (Hc) and low noise can be obtained by using a CoCrPtTaZr alloy having a predetermined composition as the magnetic film.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 酒井 浩志 千葉県市原市八幡海岸通5−1 昭和電工 株式会社HD研究開発センター内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hiroshi Sakai 5-1 Yawata Kaigandori, Ichihara City, Chiba Prefecture Showa Denko HD Research & Development Center Co., Ltd.

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 非磁性基板、非磁性下地膜、磁性膜及び
保護膜を基本構成とする磁気記録媒体において、前記磁
性膜が、Cr10〜26原子%、Pt1〜16原子%、
Ta1〜7原子%、Zr0.5〜4原子%、残部実質的
にCoからなることを特徴とする磁気記録媒体。
1. A magnetic recording medium having a non-magnetic substrate, a non-magnetic base film, a magnetic film and a protective film as a basic structure, wherein the magnetic film comprises 10 to 26 atomic% of Cr, 1 to 16 atomic% of Pt,
A magnetic recording medium comprising Ta 1 to 7 atomic%, Zr 0.5 to 4 atomic%, and the balance substantially Co.
【請求項2】 磁性膜がCr12〜22原子%、Pt3
〜10原子%、Ta2〜6原子%、Zr1〜3原子%で
ある請求項1に記載の磁気記録媒体。
2. A magnetic film comprising: 12 to 22 atomic% of Cr;
2. The magnetic recording medium according to claim 1, wherein the content is 10 to 10 atomic%, Ta is 2 to 6 atomic%, and Zr is 1 to 3 atomic%.
【請求項3】 非磁性下地膜が、W5〜60原子%、残
部実質的にCrからなる請求項1または2に記載の磁気
記録媒体。
3. The magnetic recording medium according to claim 1, wherein the non-magnetic underlayer is composed of 5 to 60 atomic% of W and the balance substantially of Cr.
【請求項4】 Cr10〜26原子%、Pt1〜16原
子%、Ta1〜7原子%、Zr0.5〜4原子%、残部
実質的にCoからなることを特徴とする磁性合金膜。
4. A magnetic alloy film comprising 10 to 26 atomic% of Cr, 1 to 16 atomic% of Pt, 1 to 7 atomic% of Ta, 0.5 to 4 atomic% of Zr, and the balance substantially Co.
【請求項5】 Cr12〜22原子%、Pt3〜10原
子%、Ta2〜6原子%、Zr1〜3原子%である請求
項4に記載の磁性合金膜。
5. The magnetic alloy film according to claim 4, wherein Cr is 12 to 22 atomic%, Pt is 3 to 10 atomic%, Ta is 2 to 6 atomic%, and Zr is 1 to 3 atomic%.
【請求項6】 Cr10〜26原子%、Pt1〜16原
子%、Ta1〜7原子%、Zr0.5〜4原子%、残部
実質的にCoからなる焼結体であることを特徴とするス
パッタリングターゲット。
6. A sputtering target characterized by being a sintered body composed of 10 to 26 atomic% of Cr, 1 to 16 atomic% of Pt, 1 to 7 atomic% of Ta, 0.5 to 4 atomic% of Zr, and the balance substantially Co. .
【請求項7】 Cr12〜22原子%、Pt3〜10原
子%、Ta2〜6原子%、Zr1〜3原子%である請求
項6に記載のスパッタリングターゲット。
7. The sputtering target according to claim 6, wherein Cr is 12 to 22 atomic%, Pt is 3 to 10 atomic%, Ta is 2 to 6 atomic%, and Zr is 1 to 3 atomic%.
JP26747097A 1997-09-30 1997-09-30 Magnetic recording medium, magnetic alloy film and sputtering target Withdrawn JPH11111524A (en)

Priority Applications (1)

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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26747097A JPH11111524A (en) 1997-09-30 1997-09-30 Magnetic recording medium, magnetic alloy film and sputtering target

Publications (1)

Publication Number Publication Date
JPH11111524A true JPH11111524A (en) 1999-04-23

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ID=17445298

Family Applications (1)

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Country Status (1)

Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6973205B2 (en) 1999-08-02 2005-12-06 Infineon Technologies Ag Scratch-resistant coating for a semiconductor component

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6973205B2 (en) 1999-08-02 2005-12-06 Infineon Technologies Ag Scratch-resistant coating for a semiconductor component

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