JPH10326581A - Image forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To secure the electrical connection, and to reduce the number of projection structures of an output part, and to lower the influence to the atmosphere inside of a container by providing a recessed part in an outer wall of a device container, and providing this recessed part with a drawing electrode to be electrically connected to an image forming member. SOLUTION: A ring-like hollow member 101 is fixed between a through hole 102, which is formed in a rear plate 1, and a face plate 11 having an image forming member 12 by backing the frit glass so as to form a recessed part. A high-voltage connecting terminal 16 to be used for applying voltage to the image forming member 12 is connected to an output wiring 100, which is arranged at an opening part of the hollow member 101 so as to be led from inside of a vacuum container to the atmosphere when viewed from the rear plate 1 side at the time of positioning the face plate 11 and the rear plate 1. After forming a vacuum container in the atmosphere, the high-voltage connecting terminal 16 is electrically connected to the output wiring 100 of the image forming member 12 arranged on the face plate 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to an image forming apparatus such as an image display apparatus.

[0002]

2. Description of the Related Art CRTs have been widely used as image forming apparatuses for displaying images using electron beams.

On the other hand, in recent years, flat panel display devices using liquid crystal have been widely used in place of CRTs. However, since they are not self-luminous, they have problems such as having to have a backlight. Development of a light-emitting display device has been desired. As a self-luminous display device, a plasma display has recently begun to be commercialized.
At present, the principle of light emission is different from that of CRTs because of the contrast of images and good color development. If a plurality of electron-emitting devices are arranged and used in a flat panel image forming apparatus, it is expected that light emission of the same quality as a CRT can be obtained, and much research and development has been carried out. For example, JP-A-4-163833 discloses that
A flat-plate electron beam image forming apparatus in which a linear hot cathode and a complicated electrode structure are contained in a vacuum vessel is disclosed.

In an image forming apparatus using an electron source,
For example, a part of the electron beam incident on the image forming member may be scattered and collide with the inner wall of the vacuum vessel to release secondary electrons, thereby charging up the part. Not only becomes unstable, but also generates an internal discharge, which may cause the device to deteriorate or be destroyed.

As a method of preventing such charge-up, there is a method of forming an antistatic film on the inner wall of a vacuum vessel. For example, Japanese Patent Laying-Open No. 4-163833 discloses a configuration in which a conductive layer made of a high-impedance conductive material is provided on a side surface of an inner wall of a glass container of an image forming apparatus.

In an image forming apparatus using an electron beam, a voltage for accelerating electrons is applied between an electron source and an image display member. When the vacuum container of the image forming apparatus is made of a glass containing Na, such as blue plate glass, the above-described electric field causes the movement of Na ions to generate an electrolytic current. A vacuum container using glass is formed by joining a plurality of members with frit glass. When Na ions flow into the frit glass by the above-described electrolytic current, PbO contained in the frit glass is reduced. There is a possibility that Pb is deposited, cracks are generated in the frit glass, and the vacuum in the container cannot be maintained. For this purpose, there is a method in which an electrode is provided at an appropriate position on the outer wall of the vacuum vessel to absorb the electrolytic current and prevent the electrolytic current from flowing through the frit glass. For example, Japanese Patent Application Laid-Open No. 4-94038 discloses a configuration in which a low-resistance conductive film is provided around the face plate and connected to the ground potential so that the electrolytic current does not flow through the frit glass. Further, a configuration in which a strip-shaped electrode is formed on a side wall of a vacuum vessel to form a potential gradient by flowing a current is disclosed in US Pat.
7,165.

FIG. 15 shows an assumed equivalent circuit in the above case. 71 shows an image forming member, the voltage V _a is applied. Numeral 72 denotes a joint of the members of the vacuum vessel, and 75
Denotes the resistance of the antistatic film formed on the inner wall of the vacuum vessel between 71 and 72. Reference numeral 73 denotes a wiring for driving the electron source, which passes from inside to outside of the vacuum vessel through the joint portion.
Reference numeral 6 denotes the resistance of the frit glass between 72 and 73. The wiring is connected to a terminal 79 of an electron source driving power supply having a predetermined potential, and reference numeral 80 denotes a resistance of the wiring. 7
Reference numeral 7 denotes a resistance value with respect to an electrolytic current flowing from the image forming member 71 to the joining portion 72 inside the glass constituting the vacuum container. Reference numeral 74 denotes an electrode for capturing an electrolytic current outside the vacuum vessel, and reference numeral 78 denotes a resistance to the electrolytic current flowing inside the glass. The electrode 74 is connected to the ground via a resistance of a conductive wire connected to the electrode 74. The joint 72 is further connected to a member 82 having a specific potential via a resistor 81 such as an antistatic film.

FIG. 15 shows the configuration of the above-mentioned conventional example in one diagram, and the above-mentioned conventional example is not complete with the elements shown in FIG.

However, the above-mentioned flat type electron beam image forming apparatus described in Japanese Patent Application Laid-Open No. 4-163833 has a certain thickness because it includes internal structures such as horizontal deflection electrodes and vertical deflection electrodes. Is inevitable. 2. Description of the Related Art In recent years, it has become necessary to develop a thinner electron beam image forming apparatus, for example, as a portable information terminal device, for example, as thin as a liquid crystal display.

The present applicant has already made many proposals regarding a surface conduction electron-emitting device and an image forming apparatus using the same. For example, it is described in JP-A-7-235255. Since this electron-emitting device has a simple structure and can be formed in large numbers over a large area,
Since the image display device can be formed without complicated components such as an electrode structure, it can be used for an extremely thin electron beam image forming device.

By the way, a voltage for accelerating electrons is applied between the electron source and the image forming member. When a normal phosphor is used as the image forming member, it is necessary to emit light of a preferable color. The voltage is preferably as high as possible, and is preferably at least several kV. In order to supply a voltage of about several kV to the above-described image forming member, a connection structure of a voltage supply terminal that takes into account discharge and high voltage is required.

In a flat plate type electron beam image forming apparatus, a terminal different from a CRT is required for a terminal for supplying a voltage to a member inside a vacuum vessel such as an anode. As a connection terminal, in Japanese Patent Application Laid-Open No. 5-114372, a metal rod is penetrated through glass on the back surface of a vacuum vessel and a penetration portion is sealed with sealing glass. The metal back layer of the image forming section is mechanically contacted. In Japanese Patent Application Laid-Open No. 4-160741, the terminal connection portion is connected to the inside of the vacuum vessel with a conductive adhesive. JP-A-4-94038, JP-A-4-9
8744 and JP-A-6-139965,
It is connected inside the vacuum vessel and taken out from the side. In Japanese Patent Application Laid-Open No. 4-94043, a through hole is provided on the face plate side and connected inside the vacuum vessel.

[0013]

However, in the case of a configuration in which the high-pressure extraction wiring is connected in a vacuum container as in the above-described conventional example, the entire container is heated to a high temperature with sealing glass in order to form the vacuum container. However, at this time, the connection between the high-voltage wiring and the connection terminal is also exposed to a high temperature. Therefore, when an adhesive is used for the connection, impurities in the adhesive are removed. May cause adverse effects on the electron emission characteristics in the vacuum vessel, or in the case of contact due to elasticity, the elastic characteristics may deteriorate, or a connection failure may occur due to handling mistakes or mounting mistakes during assembly. In this case, since it is after the assembly, it is difficult to correct the connection portion, and the steps manufactured up to now are wasted, which may be one factor that greatly reduces the yield.

As described above, the reliability of the connection of the high-voltage terminals in the vacuum vessel cannot be said to be reliable, which has been one factor that lowers the yield. In particular, when the high voltage supply connection is not reliable, the worst case is that the image is not driven over the entire image area, and the image forming apparatus cannot function at all. For this reason, it is necessary to give due consideration to production management, and the production management cost increases.

Further, if the flat-plate type image forming apparatus is used for a television receiver or the like, if a structure protruding from the side for connection is provided, the size of the housing for holding the apparatus increases accordingly. When there are protrusions on the front side and the back side, such a problem does not occur. However, restrictions are imposed on the design of the housing and the assembly process, which causes an increase in cost.

Another problem with a high voltage is that, in the case of a flat type thin image forming apparatus, the distance between the image display member and the electron source along the inner wall of the vacuum vessel becomes short, so that the discharge occurs. The risk of occurrence increases. When a discharge occurs, a very large current flows instantaneously, but when a part of the current flows into the wiring of the electron source, a large voltage is applied to the electron-emitting device of the electron source. If this voltage exceeds the voltage applied in normal operation, the electron emission characteristics may be degraded, and the device may be destroyed. In this case, part of the image is not displayed, the quality of the image is reduced, and the image cannot be used as an image forming apparatus.

Considering the above, there are the following problems for forming a terminal take-out structure in a thin electron beam image forming apparatus. (1) The configuration is such that the connection can be taken securely.

(2) No projecting portion should be formed on the side.

(3) There is no adverse effect on the atmosphere of the vacuum vessel.

There has been a need to provide a highly reliable electron beam image forming apparatus suitable for a thin structure that solves the above problems.

[Object of the Invention] The present invention provides a novel take-out structure for taking out an electrode terminal from an image forming means arranged in a container to the outside of the container in an image forming apparatus such as an image display device. The purpose is to do.

It is still another object of the present invention to provide a structure for taking out the electrode terminals in the above-mentioned image forming apparatus, which can reliably establish an electrical connection.

It is still another object of the present invention to reduce the protruding structure for taking out the electrode terminals at the outer periphery of the container in the image forming apparatus.

Another object of the present invention is to reduce the influence of the connection of the electrode terminal to the image forming means on the atmosphere in the container in the image forming apparatus.

[0025]

That is, according to the present invention, there is provided an image forming apparatus including a container and image forming means disposed in the container as means for solving the above-mentioned problem. And an extraction electrode electrically connected to the image forming means is disposed in the concave portion.

Further, the present invention is also an image forming apparatus in which a conductor terminal is connected to the lead electrode.

The image forming apparatus may further include a housing for holding the container, and the lead electrode may be connected to a conductor terminal provided on the housing.

[0028] In the image forming apparatus, the conductor terminal may be connected to a driving unit of the image forming unit provided on the housing side.

Further, the image forming apparatus further includes a housing for holding the container, and the conductor terminal is connected to a driving unit of the image forming unit provided on the housing side.

Further, the image forming means is also an image forming apparatus having an electron source and an image forming member for forming an image by irradiating electrons from the electron source.

Further, the concave portion includes an opening provided on one of the substrate on which the electron source is disposed and the substrate on which the image forming member is disposed opposite to the substrate, and a side surface of the opening. This is also an image forming apparatus formed by a member and the other substrate.

Further, the concave portion includes an opening provided in the substrate on which the electron source is arranged, a side member of the opening,
An image forming apparatus is also formed by the substrate and the substrate disposed opposite to the image forming member.

Further, in the image forming apparatus, the extraction electrode is connected to an electrode for applying a voltage to the image forming member.

Further, the present invention is also an image forming apparatus in which a conductor terminal is connected to the extraction electrode.

Further, the image forming apparatus further includes a housing for holding the container, and the lead electrode is connected to a conductor terminal provided on the housing side.

[0036] In the image forming apparatus, the conductor terminal may be connected to a voltage source provided on the housing side for applying a voltage to the image forming member.

The image forming apparatus further comprises a housing for holding the container, wherein the conductor terminal is connected to a voltage source provided on the housing side for applying a voltage to the image forming member. It is also a forming device.

Further, a conductive member disposed on the inner wall surface of the container between the electron source and the image forming member, and the conductive source and the electron source are connected to the ground from the conductive member. Current path A without any of the source drive circuits
And the resistance of the current path A is connected to the ground from the conductive member, and is lower than the resistance of any current path B via the electron source or the drive circuit.

Further, the present invention is also an image forming apparatus having a plurality of the concave portions, wherein a part of the conductive member is drawn out to another concave portion.

Further, the another concave portion has an opening provided on one of the substrate on which the electron source is disposed and the substrate on which the image forming member is disposed opposed to the substrate,
The image forming apparatus is also formed by the side member of the opening and the other substrate.

Further, the another concave portion includes an opening provided in the substrate on which the electron source is disposed, a side member of the opening, and a substrate opposed to the substrate and on which the image forming member is disposed. The image forming apparatus is also formed by:

Further, there is also provided an image forming apparatus in which a conductor terminal is connected to the conductive member drawn into the recess.

Further, the conductive member may be an image forming apparatus disposed around the entirety of the electron source.

Further, there is provided an image forming apparatus having an antistatic film on an inner wall surface of the container.

Further, the antistatic film is also an image forming apparatus which is electrically connected to the conductive member.

Further, there is provided an image forming apparatus having a conductive film having a sheet resistance of 10 ⁸ Ω / port to 10 ¹⁰ Ω / port on the inner wall surface of the container.

The conductive film is also an image forming apparatus electrically connected to the conductive member.

Further, there is also provided an image forming apparatus in which an absolutely green member is embedded in the recess.

Further, in the image forming apparatus, the extraction electrode and the conductor terminal are connected via a conductive elastic body.

Further, the image forming member is an image forming apparatus having a phosphor and an electrode.

Further, the image forming member is an image forming apparatus having a phosphor and a metal back.

The above-mentioned electron source is also an image forming apparatus having a plurality of electron-emitting devices connected by wiring.

The electron source is also an image forming apparatus in which a plurality of electron-emitting devices are connected in a matrix by a plurality of row-direction wirings and a plurality of column-direction wirings.

Further, the above-mentioned electron-emitting device is an image forming apparatus which is a cold cathode type electron-emitting device.

Further, the cold cathode type electron-emitting device is an image forming apparatus which is a surface conduction type electron-emitting device. Hereinafter, the present invention will be described with reference to preferred embodiments.

The embodiment described below is an image forming apparatus provided with an electron source and an image forming member that forms an image by irradiating electrons from the electron source as image forming means disposed in a container.

First, the structure of the terminal take-out portion in the present invention will be described. FIG. 1 shows the structure of the terminal take-out portion. Here, a description will be given of a high-voltage terminal take-out structure as an example. The hollow member 101 is formed between the through-hole 102 of the rear plate 1 and the face plate 11 having the image forming member 12 by firing and fixing with a frit (not shown). Image forming member 12
Are drawn out from the inside of the vacuum to the atmosphere through the extraction wiring 100. High voltage terminal 16 is faceplate 1
1 and is electrically connected in the atmosphere to the extraction wiring 100 of the image forming member 12.

Various methods can be applied to the connection with the wiring, for example, a mechanical connection method using an elastic spring, solder generally used for joining electric wiring, or mechanical connection and laser welding. Various connection methods such as combined use are conceivable, and the connection method is not limited. With this configuration, after the vacuum vessel is formed, the high-voltage terminal 16 can be taken out, connected to the wiring 100, or removed. As a result, the connection between the terminal and the wiring does not have to be made at the time of assembling the vacuum vessel, and a connection failure that occurs at the time of assembling does not occur, so that an image forming apparatus with a high yield can be manufactured.

Further, in order to take external discharge into consideration, preferably, a through-hole 102 is filled with an insulating resin material such as silicone, and a rubber cap 32 made of a material such as silicone is disposed. Through an external flyback transformer (not shown). With this configuration, even when the conductor approaches the periphery of the connection terminal, creeping discharge does not occur. Also, the hollow member 1
When the sealing portion is sealed with sealing glass, if the sealing portion has a two-layer structure of crystallized frit glass and amorphous frit glass, it is considered that the vacuum leak characteristics can be further improved. Is done.

Next, the structure inside the vacuum vessel will be described with respect to a more preferable embodiment in consideration of discharge.

In order to propose a structure resistant to electric discharge, an antistatic film is provided on the inner wall surface of the vacuum vessel and a current flow path between the electron source and the image forming member is traversed along a current flow path along the inner wall surface of the vacuum vessel. It has a configuration having a low-resistance conductor arranged around the electron source.

The low-resistance conductor and the ground are connected by a low-impedance current flow path (hereinafter referred to as a “ground connection line”). In the above example, the impedance of the ground connection line is preferably as small as possible. Of course, when a discharge occurs, most of the discharge current flows to the ground through the low resistance conductor and the ground connection line, and it is necessary to sufficiently reduce the current flowing into the electron source.

How much of the discharge current flows through the low-resistance conductor and the ground connection line depends on the ratio between the impedance of this current flow path and the impedance of the other current flow paths (hereinafter referred to as Z and Z ', respectively). Since the impedance depends on the frequency, it is necessary to consider what frequency component the discharge phenomenon has. Observation of the discharge occurring along the inner wall of the vacuum vessel with the flat plate type electron beam image forming apparatus revealed that the following was roughly obtained. Discharge duration is μs
ec. Although it is on the order, the time during which a large current value is observed is 1/10 of 0.1 μsec. It is about time. Therefore, it is necessary that Z is sufficiently smaller than Z ′ at a frequency of 10 MHz or less. At higher frequencies, the components included gradually decrease, but the rise of the discharge phenomenon is extremely fast, and includes components near 1 GHz. Therefore, in order to more reliably avoid damage due to discharge, it is necessary that Z is sufficiently smaller than Z 'at a frequency of 1 GHz or less.

As will be described later, this condition is such that the resistance value of the ground connection line is one of the resistance values of the other current paths.
/ 10 or less, preferably 1/100 or less, is substantially sufficient.

FIG. 14A is an equivalent circuit diagram showing a simplified state of a portion related to discharge in order to explain how a current flows when a discharge occurs in the image forming apparatus of the present invention. It is. FIG. 14B is a cross-sectional view schematically showing the flow path of the discharge current described in FIG. In the figure, 1 is a rear plate, 2 is an electron source, 3 is a wiring for driving an electron source, 4 is a support frame, 5 is a low-resistance conductor, 11
Denotes a face plate, 12 denotes an image forming member, and 13 denotes an insulating member. The insulating member 13 is formed of an insulating layer formed by a printing method or the like, or an insulating plate made of glass or ceramic. The insulating member 13 may be entirely formed by applying a glass paste by a printing method and baking to form an insulating layer, and a part of the insulating member 13 is made of the above-mentioned glass or ceramics plate to secure a sufficiently large withstand voltage. You may do it. This example shows a case where an antistatic film is provided on the inner wall of the vacuum vessel, and reference numeral 14 denotes an antistatic film. A point 61 in FIG. 14A corresponds to the image forming member 12 and a point 62 corresponds to the low-resistance conductor 5. 65
Denotes an electron-emitting device constituting an electron source, and 63 and 64 denote electrodes at both ends of the electron-emitting device. Although a plurality of electron-emitting devices are usually present, only one is shown in the figure for simplicity. Reference numeral 66 denotes a capacity between the image forming member 12 and the electron source 2.

Z ₁ is the impedance between the image forming member 12 and the low-resistance conductor 5. Normally (when no discharge occurs), Z ₁ has a relatively large impedance due to the antistatic film 14. Is generated, the impedance is reduced substantially and the current I flows.
Z ₂ is the impedance for electric current i ₁ flowing to the low-resistance conductor 5 itself, and then ground. Z ₃ indicates the impedance with respect to the current i ₂ flowing to the ground through the insulating layer, the glass of the vacuum vessel, the frit glass used for the bonding, and further via the support of the image forming apparatus. If it is increased, i ₂ is actually extremely small and can be ignored. Z ₄ indicates an impedance with respect to a current i ₃ flowing to the ground through the electron source driving wiring 3 after flowing into the electron source through the antistatic film 14. Z ₅ flows into the electron source through the antistatic film 14 and the like, the impedance to current flow i ₄ flowing into the electron-emitting device 2, Z ₆ after passing through the electron-emitting device 2, to the ground via a wiring on the opposite side This is the impedance for the flowing current (also i ₄ ). The electron source driving wiring 3
Includes a strictly complicated element such as a drive circuit connected thereto and capacitive coupling between the constituent elements.
FIG. 4 (A) shows only important elements so that the gist of the present invention can be easily understood.

When the discharge current flows into the low-resistance conductor, most of the current flows to the ground through the ground connection line (current i ₁ ), and the other currents i ₂ , i ₃ and i ₄ need only be made sufficiently small. Here shown with i ₄ current is one that causes damage of the electron-emitting device. Although the current indicated by I ₂ was not mentioned in the above description, it also deteriorates the vacuum container and the frit glass. However, as described above, i ₂ can be reduced by sufficiently increasing the resistance of the insulating layer. . In the figure, the impedance Z ₂ is represented by the aforementioned Z
, And the impedance combined by Z _{3 to} Z ₆ corresponds to Z ′ described above. The effect is greater as the value of (Z / Z ′) is smaller, but it is necessary to satisfy (Z / Z ′) ≦ 1/10 at a frequency of 10 MHz or less in order to obtain a sufficient effect. ') If 1/100, it is more certain. Furthermore, even at frequencies below 1 GHz (Z /
Z ′) is preferably 1/10 or less.

In the above description, the antistatic film is formed on the inner wall of the vacuum vessel.
Is shown. This is a charger up
It reduces the possibility of slipping, and in the present invention
This is a preferred form, but not required. Antistatic
If the sheet resistance value of the barrier film is too large, its effect will be lost.
Some conductivity is required, but resistance is too low
Flows normally between the image forming member and the low resistance conductor
Since the current increases and power consumption increases,
It is necessary to increase the resistance as long as the effect is not impaired.
You. The sheet resistance depends on the shape of the image forming device, etc.
Is 10⁸ -10 ^TenThe range of Ω / □ is preferred.

The low-resistance conductor of the image forming apparatus of the present invention is the most reliable form in which the low-resistance conductor is arranged so as to completely surround the electron source. However, the present invention is not limited to such a form. It is also possible to adopt a configuration in which it is installed only on the part where the discharge is likely to occur. For example, when the momentum of the electrons emitted from the electron-emitting device constituting the electron source has a component in a specific direction in the in-plane direction of the rear plate on which the electron source is arranged, the electron scattered by the image forming member is It is thought that many of them collide with a portion of the inner wall of the vacuum vessel in the above-described specific direction, and the possibility that discharge occurs in this portion is increased. In this case, an effect can be expected if a low resistance conductor is arranged on the side of the electron source in that direction.

Of the above-mentioned ground connection lines of the image forming apparatus of the present invention, the form for connecting the inside and outside of the vacuum vessel (hereinafter referred to as "ground connection terminal") is only required to ensure a sufficiently low impedance. It is possible. As an example, it is relatively easy to form wiring on the rear plate from the low-resistance conductor to one end of the rear plate and pass the wiring between the rear plate and the support frame joined by frit glass. To reduce the impedance of the wiring, it is desirable to increase the width and thickness of the wiring as much as possible. However, if the thickness is too large, it becomes difficult to assemble the vacuum vessel. For example, the width of the wiring can be increased to a degree slightly smaller than the width of the rear plate on the side where the wiring extends, but in this case, if the wiring for driving the electron source is stacked via an insulating layer, for example, Since a large capacitance may be formed between them and affect the driving of the electron source, it is necessary to take measures to avoid this. It is desirable to form a ground connection terminal in a portion where the driving wiring is not formed.

As described above, when the width is increased so as to reduce the impedance of the ground connection terminal, a part of the current leaks into the frit glass when the current due to the discharge flows, as described above. Naturally, it is also effective in preventing the frit glass from being damaged.However, in order to make it more reliable, a through hole received in the face plate or the rear plate must be It is preferable to use a ground connection terminal coated with an insulator which does not allow an ionic current to flow therethrough, for example, a ceramic such as alumina.

When both the high-voltage connection terminal for connecting the image forming member to a high-voltage power supply and the ground connection terminal are formed through through holes provided in a rear plate, the image forming apparatus of the present invention is applied. When designing a TV receiver or the like, a connection to a high-voltage power supply or a ground can be formed on the back surface of the image forming apparatus, which is preferable in design.
However, in this case, since a high voltage is applied between the insulating coating of the high-voltage connection terminal and the rear plate, a discharge may occur even on the surface of the insulating layer.
A low resistance conductor is also placed around the through hole of the high voltage connection terminal,
Connect this to a low-resistance conductor placed around the electron source,
Alternatively, an integrally formed design can be applied.

[0073]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be specifically described with reference to the drawings. First, each figure will be described.

The structure of the terminal take-out portion of the image forming apparatus according to the present embodiment will be described with reference to a schematic cross-sectional view (FIG. 1). The take-out terminals may be for high voltage application and ground line use. Here, the take-out structure of the high voltage application terminal will be described as an example.

A ring-shaped hollow member 101 was fixed between the through-hole 102 formed in the rear plate 1 and the face plate 11 having the image forming member 12 by frit glass to form a concave portion.

When the hollow member 101 is sealed with sealing glass, if the sealing portion has a two-layer structure of crystallized frit glass and amorphous frit glass, the vacuum leak characteristics can be further improved. It is considered and selected as appropriate.

A terminal (high voltage terminal) 16 used for applying a voltage to the image forming member 12 is connected to the rear plate 1 when the face plate 11 and the rear plate 1 are aligned.
When viewed from the side, an extraction wiring 1 arranged at the opening of the hollow member 101 so as to be led out from the inside of the vacuum vessel to the atmosphere.
00 is connected.

The high voltage terminal 16 is connected to the face plate 11
Extraction wiring 100 of image forming member 12 arranged above
After the vacuum vessel is formed in the atmosphere, they are electrically connected. As a material for the high voltage terminal, a conductive metal material such as Ag or Cu can be used. For the connection, various methods such as laser welding, conductive adhesive, metal bonding, etc. can be applied, for example, a method of providing a spring structure at the tip of the terminal and making it elastically contact,
It is easy and easy to remove and attach.
The air space for the hollow member 101 around the high voltage terminal 16 may have a space distance depending on the magnitude of the voltage, considering that the higher the voltage, the higher the probability of discharge occurring in the atmosphere.

By adopting a structure having such a configuration,
After forming the vacuum container, the high-voltage terminal 16 can be taken out, connected to the wiring 100, or removed.

As the shape of the hollow member 101, various shapes such as a ring shape and a square shape are conceivable, and are not particularly limited. However, a shape in which electric field concentration is less likely to occur is preferable, and a ring shape is suitable. I have. Hollow member 10
In the case of forming a high-voltage takeout opening as the material 1, an insulator material such as glass or ceramic having a low Na content, in which substantially no electrolytic current flows, is suitable. Especially,
Ceramics are less likely to ionize inside when an electric field is applied, and have less current movement.
It is a preferable material because it can suppress the deterioration of the frit glass used for sealing of No. 01.

Further, in order to take external discharge into consideration, the rubber cap 32 is formed by embedding an insulating resin material such as silicone into the through hole 102 and forming the material with silicone or the like.
And connected to an external flyback transformer (not shown) through a cable 31 that withstands high voltage. With this configuration, even when the conductor approaches the periphery of the connection terminal, creeping discharge does not occur.

FIG. 2 is a plan view schematically showing an example of the configuration of the image forming apparatus according to the present embodiment, which is a structure particularly considering vacuum internal discharge, and is viewed from above with the face plate removed. Is shown. Reference numeral 1 denotes a rear plate which also serves as a substrate for forming an electron source.
Various materials are used depending on the conditions, such as blue sheet glass having an iO ₂ coating formed thereon, glass having a low Na content, quartz glass, and ceramics. Note that a substrate for forming an electron source may be provided separately from the rear plate, and the two may be joined after forming the electron source. Reference numeral 2 denotes an electron source region in which a plurality of electron-emitting devices such as a field emission device and a surface conduction electron-emitting device are arranged, and wirings connected to the devices are formed so as to be driven according to purpose. 3-1, 3-2, 3
Reference numeral -3 denotes a wiring for driving the electron source, which is taken out of the image forming apparatus and connected to a driving circuit (not shown) for the electron source. 4 is a rear plate 1 and a face plate (not shown)
And is joined to the rear plate 1 by frit glass. Electron source drive wiring 3-1
3-2 and 3-3 are buried in frit glass at the joint between the support frame 4 and the rear plate 1 and are drawn out. Reference numeral 5 denotes a low-resistance conductor formed so as to surround the electron source region 2. The low-resistance conductor 2 and the electron source driving wires 3-1 and 3-1
An insulating layer (not shown) is formed between 3-2 and 3-3. Reference numeral 102 denotes a through hole for allowing a high-voltage terminal for supplying a high voltage to the image forming member of the face plate to be connected to an image forming member (not shown) in the atmosphere after assembling the vacuum vessel. Is an insulating member filled in the through hole 102 after the connection of the high voltage terminal.
Reference numeral 101 denotes a hollow member constituting a through hole, which is sandwiched between the rear plate 1 and a face plate (not shown) by frit glass.

In addition, a getter 8 and a getter shielding plate 9 are disposed in the vacuum container as required.

FIGS. 3 (A), (B) and (C) show A in FIG.
It is a schematic diagram which shows the structure of the cross section along the line of -A, BB, and CC. In FIG. 3A, 11 is a face plate, 12 is an image forming member made of a fluorescent film and a metal film (for example, Al) called a metal back, and 14 is an antistatic film formed on the inner wall of the vacuum vessel.

The antistatic film is formed not only on the glass or the like on the inner wall of the vacuum vessel, but may also be formed on the image forming member or the electron source. On the electron source, there is also the effect of preventing charge-up, and on the image forming member, there is the effect of reducing the reflection of electrons.

If the sheet resistance value of the antistatic film is in the range of 10 ⁸ Ω / □ to 10 ¹⁰ Ω / □ as described above, the leakage current between the electrodes and wirings of the electron-emitting device constituting the electron source may cause a problem. Will not be.

The material of the antistatic film is not particularly limited as long as a predetermined sheet resistance value is obtained and the material has sufficient stability. For example, a film in which graphite fine particles are dispersed at an appropriate density can be applied. Since this film is sufficiently thin, even if it is formed on the metal back of the image forming member, it has substantially no adverse effect of reducing the number of electrons reaching the phosphor and contributing to light emission. Elastic scattering of electrons is less likely to occur than the material of the metal back, so that an effect of reducing the scattering of electrons which causes charge-up can be expected.

For example, when a discharge occurs along the inner wall of the vacuum vessel, a discharge current flows from the image forming member 12 to which the high voltage is applied to the inner wall of the vacuum vessel, and the low-resistance conductor 5
To the ground through the low impedance ground connection line.
1 to the electron source, or to the ground through the glass or other member constituting the vacuum vessel itself.

Here, the ground connection line is a current flow path between the low resistance conductor 5 and the ground.

In FIG. 3B, the ground connection terminal 505 is connected to the antistatic film 14 and is connected to the low-resistance conductor 5 led out into the atmosphere. The connection of the ground connection terminal 505 to the low resistance conductor 5 includes laser welding,
Various methods such as conductive adhesives and metal bonding can be applied. For example, a method using solder generally used for bonding electric wiring is reliable and highly reliable. Ground connection terminal 505
Is a rod having a sufficient cross-sectional area made of a metal such as Ag or Cu (for example, an Ag rod having a diameter of 2 mm, in which case the electric resistance of the rod is about 5 mΩ / cm, which is an extremely small value, or Cu, Al, etc.). If a material having good conductivity is used, the same low resistance value can be obtained.)
It is desirable that the surface has an Au coating layer in order to reduce the contact resistance. If the contact portion of the low-resistance conductor 5 is also covered with Au or is itself formed of Au, the contact resistance between the ground connection terminal 505 and the low-resistance conductor 5 can be extremely reduced. More desirable.

By connecting the connection connected to the ground connection terminal 505 to the ground, the resistance from each portion of the low-resistance conductor 5 to the ground can be made extremely small, for example, 1 Ω or less.

On the other hand, the self-induction coefficient of the ground connection line can be reduced to 10 ⁻⁶ H or less by shortening the distance between the ground connection terminal 15 and the ground. Therefore, the impedance can be reduced to about 10Ω or less for the frequency component of 10 MHz. For a frequency component of 1 GHz, the impedance is at most about 1 kΩ.

Assuming that the ground connection line does not exist, the main current flow path connecting the low-resistance conductor 5 to the ground is connected to the low-resistance conductor 5 from the rear plate surface (if there is an antistatic film, the charging After flowing into the electron source through the protective film), it reaches the ground through the electron source driving wiring. That is, in FIG. 11A,
This is a flow path through which currents i ₃ and i ₄ flow. It is generally considered that the impedance of the flow path is governed by the resistance of the flow path of the current flowing through the surface of the rear plate or the antistatic film. Assuming that the circumference of the electron source is 100 cm, and the distance between the electron source and the low-resistance conductor is 1 cm, and if the sheet resistance of the antistatic film is 10 ⁸ Ω / □, the current is uniformly applied to the antistatic film. Even if it is assumed to flow, its resistance value is 1MΩ
It is. This value is a sufficiently large value as compared with the impedance of the above-described ground connection line.

In the absence of the antistatic film, the resistance of this portion is further increased.

If the distance between the electron source and the low-resistance conductor is reduced to about 1 mm, the resistance value at this portion becomes 1/10 of the above value. Furthermore, even if the resistance value is reduced by another digit for some reason, the resistance value between the low resistance conductor and the electron source is 10 kΩ. This value is an extreme case, and actually results in a resistance larger than this value. Further, the resistance value of this portion becomes the dominant portion of the impedance of the current flow path between the low-resistance conductor and the ground when the ground connection line does not exist. That is,
The impedance Z 'of this current flow path is substantially equal to its resistance value (hereinafter R'), and the resistance value between the low-resistance conductor and the electron source is the main part.

When a discharge current flows into the low-resistance conductor, a current flows from the low-resistance conductor to ground via a low-impedance line, and then flows into an electron source through an antistatic film to form an electron-emitting device. The ratio of the magnitude to the current flowing to the ground through the wiring or the wiring is equal to the ratio of the reciprocal of the impedance Z and Z ′ (≒ R ′). If R 'is 10 times as large as Z, the current flowing to the ground through the electron source when a discharge occurs is about one digit smaller than when there is no low impedance line.

The self-induction component of the impedance of the low impedance line is 10 MHz at 10 MHz as described above.
Since the resistance component (hereinafter referred to as R) is smaller than 1 kΩ, the impedance Z is about 1 kΩ or less in a frequency region of 1 GHz or less, and 1/10 of Z ′ (≒ R ′). It is as follows.
Further, when R is smaller than 100Ω, Z is 100Ω or less in a frequency region of 100 MHz or less.

The extent to which the current flowing into the electron source during discharge can be reduced to avoid damage to the electron-emitting device, the vacuum vessel, and the drive circuit depends on the conditions of each image forming apparatus. Although it cannot be said, the magnitude of the current flowing by the discharge seems to be statistically uneven. If the amount of current flowing into the electron source is reduced by one or two digits, the probability of damage to the electron source etc. Can be expected to decrease considerably.

In the above description, the case where R 'is 10 kΩ, which is considered to be the smallest, has been described. However, even when R' is larger than this, R is 1/10 or less or 1 or less.
When the ratio is / 100 or less, the same or higher effects can be expected.

The connection to the ground may be taken out from the rear plate in addition to the method described in the above example.

In FIG. 3C, reference numeral 16 denotes a high voltage terminal for supplying _a high voltage (anode voltage Va) to the image forming member 12. A ring-shaped hollow member 101 was formed between the through-hole 102 of the rear plate 1 and the face plate 11 having the image forming member 12 by firing and fixing with frit glass. The image forming member 12 has a lead-out wiring 100
Are connected, and the extraction wiring 100 is led out of the vacuum vessel to the atmosphere. The high voltage terminal 16 is electrically connected to the extraction wiring 100 arranged on the face plate 11 and connected to the image forming member 12 after forming a vacuum container in the atmosphere. As material for high voltage terminals, A
A conductive metal material such as g or Cu can be used.
For the connection, various methods such as laser welding, a conductive adhesive, and metal bonding can be applied.

The air space around the high-voltage terminal 16 with respect to the hollow member 101 is given a space distance depending on the magnitude of the voltage, considering that the higher the high pressure, the higher the probability of discharge occurring in the air. If the space distance cannot be made large due to the configuration of the vacuum vessel, a high pressure-resistant material such as ceramic or Teflon may be arranged around the terminals 16.

In such a configuration, since there is a possibility that a discharge occurs along the side surface of the insulator, the through-hole 102 is surrounded by the low-resistance conductor 5 as shown in FIG.
It is preferable to prevent the discharge current from flowing into the electron source or the vacuum vessel.

Further, the configuration may be such that the high voltage wiring is taken out to the face plate side.

The antistatic film 14 is preferably formed not only on the wall without the face plate and the support frame rear plate but also on the getter shielding plate.

The type of the electron-emitting device constituting the electron source used in this embodiment is not particularly limited as long as the characteristics such as the electron-emitting characteristics and the size of the device are suitable for the target image forming apparatus. is not. Thermionic emission devices, or cold cathode devices such as field emission devices, semiconductor electron emission devices, MIM type electron emission devices, and surface conduction electron emission devices can be used.

The surface conduction electron-emitting devices shown in the examples described later are preferably used in the present invention.
It is the same as that described in the above-mentioned application by the present applicant, Japanese Patent Application Laid-Open No. Hei 7-235255, but will be briefly described below. FIGS. 11A and 11B are schematic views showing an example of the configuration of a single surface conduction electron-emitting device. FIG. 11A is a plan view and FIG. 11B is a cross-sectional view.

In the figure, 41 is a base for forming an electron-emitting device, 42 and 43 are a pair of device electrodes, 44 is a conductive film connected to the device electrode, and an electron-emitting portion 45 is formed in a part thereof. Have been. In the electron emitting portion 45, a part of the conductive film is broken, deformed,
A portion of the conductive film which is formed by alteration and has a high resistance has a crack formed in a part of the conductive film, and electrons are emitted from the vicinity thereof.

The above forming step is performed by applying a voltage between the pair of element electrodes. The voltage to be applied is preferably a pulse voltage. One of the method of applying the pulse voltage having the same peak value shown in FIG. 6A and the method of applying the pulse voltage while gradually increasing the peak value shown in FIG. A method may be used.

After forming the electron-emitting portion by the forming process, a process called “activation” is performed. This is to repeatedly apply a pulse voltage to the element in an atmosphere in which an organic substance is present, thereby depositing a substance mainly composed of carbon or a carbon compound around the electron-emitting portion. As a result, both the current flowing between the device electrodes (device current _If ) and the current associated with electron emission (emission current _Ie ) increase.

It is preferable that the electron-emitting device obtained through the above steps be subjected to a stabilization step. This step is a step of exhausting the organic substance in the vacuum container.
It is preferable to use a vacuum exhaust device that does not use oil so that the oil generated from the device does not affect the characteristics of the element. Specifically, a vacuum exhaust device such as a sorption pump and an ion pump can be used.

The partial pressure of the organic substance in the vacuum container is 1.3 at which the above-mentioned carbon and carbon compounds are not newly deposited.
× 10 ⁻⁶ Pa or less, more preferably 1.3 × 10 ⁻⁸ Pa
Pa or less is particularly preferred. Further, when evacuating the inside of the vacuum vessel, the entire vacuum vessel is heated, and the inner wall of the vacuum vessel,
It is preferable that the organic substance molecules adsorbed on the electron-emitting device be easily exhausted. The heating conditions at this time are 80 to 250
C., preferably at 150 ° C. or higher, it is preferable to perform the treatment for as long as possible. However, the treatment is not particularly limited to this condition. Do. The pressure in the vacuum vessel needs to be as low as possible, and 1 × 10 ⁻⁵ Pa
Or less, more preferably 1.3 × 10 ⁻⁶ Pa or less.

It is preferable that the atmosphere at the time of driving after the stabilization process is performed is the same as the atmosphere at the end of the stabilization process, but the present invention is not limited to this. Even if the degree of vacuum itself is slightly reduced, sufficiently stable characteristics can be maintained.

By employing such a vacuum atmosphere, the deposition of new carbon or carbon compound can be suppressed,
In addition, H ₂ O, O _2, etc. adsorbed on a vacuum vessel or a substrate can be removed. As a result, the device current _If and emission current _Ie become
Stabilize.

The relationship between the voltage _Vf applied to the device and the device current _If and the emission current _Ie of the surface conduction electron-emitting device thus obtained is as shown in FIG. Become. In FIG. 12, since the emission current _Ie is significantly smaller than the element current _If , it is shown in arbitrary units. The vertical and horizontal axes are linear scales.

As shown in FIG. 12, this device has a certain voltage.
(Called the threshold voltage, V in FIG. 12) _th)
When the pressure is applied, the emission current I_eIncrease
Low voltage V_thIn the following, the emission current I_eIs almost detected
Absent. That is, the emission current I_eClear threshold voltage for
Pressure V_thIs a non-linear element having If you use this,
Matrix wiring is applied to the two-dimensionally arranged electron-emitting devices.
And simple matrix drive to select from desired elements
Emit electrons and irradiate them to the image forming member to form an image.
It is possible to form.

An example of the structure of the fluorescent film as an image forming member will be described. FIG. 13 is a schematic diagram showing a fluorescent film. The fluorescent film 51 can be composed of only a phosphor in the case of monochrome. In the case of a color fluorescent film, it can be composed of a black conductive material 52 called a black stripe or a black matrix and a fluorescent material 53 depending on the arrangement of the fluorescent materials. The purpose of providing the black stripes and the black matrix is to make the color separation and the like inconspicuous by making the painted portion between the phosphors 53 of the necessary three primary color phosphors black in the case of color display, An object of the present invention is to suppress a decrease in contrast due to light reflection. As a material for the black stripe, a material which is conductive and has little light transmission and reflection can be used in addition to a commonly used material mainly containing graphite.

The method of applying the fluorescent substance to the face plate 11 can employ a precipitation method, a printing method, or the like irrespective of monochrome or color. Although not shown, a metal back is usually provided on the inner surface side of the fluorescent film 51. The purpose of providing the metal back is to improve the brightness by mirror-reflecting the light toward the inner surface side of the phosphor emission toward the face plate 11 side, to act as an electrode for applying an electron beam acceleration voltage, The purpose is to protect the phosphor from damage due to collision of negative ions generated in the envelope. The metal back can be manufactured by performing a smoothing process (usually called “filming”) on the inner surface of the fluorescent film after manufacturing the fluorescent film, and then depositing Al using vacuum evaporation or the like.

The face plate 11 is further provided with a fluorescent film 5.
A transparent electrode may be provided on the outer surface side of the fluorescent film 51 in order to increase the conductivity of the phosphor film 51.

In the case of color, it is necessary to make the phosphors of each color correspond to the electron-emitting devices, and sufficient alignment is indispensable.

By arranging the hollow structures at the high voltage terminal take-out portion and the low resistance conductor take-out terminal portion as described above, it has become possible to stably supply a thin flat plate type electron beam image forming apparatus.

[0122]

The present invention will be further described below with reference to examples.

Example 1 A surface conduction electron-emitting device was
A plurality of electron sources were formed on a rear plate also serving as a substrate and wired in a matrix to form an electron source, and an image forming apparatus was prepared using the electron sources. 3 and 4 (A) to (E), FIG.
The creation procedure will be described with reference to FIG.

(Step-a) A 0.5 μm SiO ₂ layer was formed by sputtering on the surface of the washed blue plate glass to form a rear plate 1. Subsequently, a diameter of 4 m for introducing a high voltage introduction terminal 16 (FIG. 3) by an ultrasonic machine is used.
An m-shaped circular through hole 102 (FIG. 5) and an exhaust hole 501 (FIG. 5) were formed.

The device electrodes 21 and 22 of the surface conduction electron-emitting device are formed on the rear plate by using a sputtering film forming method and a photolithography method. The material is 5nm Ti,
It is formed by laminating 100 nm of Ni. The element electrode interval was 2 μm (FIG. 4A).

(Step-b) Subsequently, the Ag paste is printed in a predetermined shape and baked, so that the Y-direction wirings 23 are formed.
Was formed. The wiring is extended to the outside of the electron source forming region, and becomes an electron source driving wiring 3-2 (FIG. 5). The width of the wiring is 100 μm and the thickness is about 10 μm (FIG. 4).
(B)).

(Step-c) Next, PbO as a main component,
The insulating layer 24 is formed by a printing method using a paste mixed with a glass binder. This insulates the Y-direction wiring 23 from an X-direction wiring described later, and has a thickness of about 2 mm.
It was formed to have a thickness of 0 μm. A notch is provided in the element electrode 22 to connect the X-directional wiring to the element electrode (FIG. 4C).

(Step-d) Subsequently, an X-directional wiring 25 is formed on the insulating layer 24 (FIG. 4D). The method is the same as that for the Y-direction wiring, and the width of the wiring is 300 μm and the thickness is about 10 μm. Subsequently, a conductive film 26 made of PdO fine particles is formed.

In the formation method, a Cr film is formed by a sputtering method on a substrate on which wiring is formed, and an opening corresponding to the shape of the conductive film 26 is formed in the Cr film by a photolithography method.

Subsequently, an organic Pd compound solution (ccp
-4230: Okuno Pharmaceutical Co., Ltd.)
After baking at 00 ° C. for 12 minutes to form a PdO fine particle film, the Cr film is removed by wet etching, and a conductive film 26 having a predetermined shape is formed by lift-off (FIG. 4E).

(Step-e) Further, on the rear plate,
A paste containing PbO as a main component and a glass binder is applied. The application area is the same as the element electrode 2
2, except for the region (electron source region 2 in FIG. 2) in which the X-direction wiring 25, the Y-direction wiring 23, and the conductive film 26 are formed, and which corresponds to the inside of the support frame 4 in FIG. is there.

(Step-f) In the step f, the quartz glass 27
Are formed into a shape as shown in FIG. 5 and arranged on the rear plate 1. Quartz glass 27 is 0.5mm thick
Material was used. However, the portion corresponding to the high-voltage terminal passage hole is a circle having a diameter of 8 mm, and a passage hole 5
00 is formed.

On this quartz glass 27, quartz glass 2
The low-resistance conductor 5 is printed in a shape slightly narrower than 7. Au was used as the material of the low-resistance conductor. The width is 2 mm and the thickness is about 100 μm. Put this on the rear plate,
The through holes 102 and 500 are placed so as to match each other, and the glass paste is heat-treated to form an insulating layer, and at the same time, the quartz glass 27 carrying the low-resistance conductor 5 is fixed at a predetermined position.

The reason why the quartz glass 27 is used is that the low-resistance conductor 5 and the electron source driving wires 3-1, 3-2, 3-3 are used.
When a sufficient dielectric strength is obtained by using a glass paste or the like, a low-resistance conductor may be formed thereon after forming an insulating layer with a glass paste. .

(Step-g) The support frame 4 and one high-voltage terminal opening forming ring member 101 and four ground line connecting ring members 502 are fixed to the rear plate 1 using frit glass. The frit glass used was LS3081 manufactured by Nippon Electric Glass. The firing temperature was set at 380 ° C. for the preliminary firing temperature of the frit glass and 410 ° C. for the main firing temperature. At this time, the high-voltage terminal opening forming ring member 101 and the ground line connecting ring member 502 are positioned and fixed so as to be the terminal positions to be connected. The ring member 101 includes the rear plate 1
And the ring member 502 is aligned with the ground line connection through hole 503 of the face plate 11.

The fixation of the getter 8 is simultaneously performed using frit glass (not shown). As the getter, a ring-type getter (N-301) manufactured by Toshiba was used. A dispersion of carbon fine particles is spray-coated on the inner surface of the container and dried to form an antistatic film. The forming conditions are such that the sheet resistance value of the antistatic film is about 10 ⁸ Ω / □.

(Step-h) Subsequently, a face plate is prepared. As in the case of the rear plate, a blue sheet glass provided with a SiO ₂ layer is used as a base. An opening 503 for the ground line connection terminal is formed by ultrasonic processing.
Subsequently, a high-voltage introduction terminal contact lead-out wiring 504 and a wiring for connecting a metal back to be described later are formed of Au by printing, and a black stripe of a fluorescent film is formed.
Subsequently, after forming a stripe-shaped phosphor and performing a filming process, an Al film having a thickness of about 20 μm was deposited thereon by a vacuum evaporation method to form a metal back.

Further, a carbon fine particle dispersion is sprayed on the face plate inside the container in the same manner as described above to form an antistatic film. Of the film thus formed, the portion formed on the metal back has an effect of preventing the incident electron beam from being reflected. This has a favorable effect, for example, preventing the reflected electrons from colliding with the inner wall of the vacuum vessel and causing charge-up.

(Step-i) The support frame and the ring members 101 and 502 joined to the rear plate are joined to the face plate using frit glass. The frit glass used was LS3081 manufactured by Nippon Electric Glass. The firing temperature was set at 38 as the preliminary frit glass firing temperature.
The temperature was set to 0 ° C, and the main firing temperature was set to 410 ° C.

It should be noted that each electron-emitting device of the electron source is carefully aligned with the position of the fluorescent film on the face plate.

(Step-j) The above-described image forming apparatus is connected to a vacuum exhaust device via an exhaust pipe (not shown), and the inside of the container is exhausted. When the pressure in the container becomes 10 ⁻⁴ Pa or less, a forming process is performed.

The forming was performed by applying a pulse voltage having a gradually increasing peak value as schematically shown in FIG. 6B to the X-direction wiring for each row in the X-direction. The pulse interval T ₁ is 1
0 sec. , The pulse width T ₂ is 1 msec. And Although not shown in the figure, a rectangular wave pulse having a peak value of 0.1 V was inserted between the forming pulses, the current value was measured, and the resistance value of the electron-emitting device was simultaneously measured.
When the resistance value per element exceeds 1 MΩ, the forming process of that row is ended, and the process moves to the next row. By repeating this, the forming process is completed for all the rows.

(Step-k) Next, an activation process is performed. Prior to this processing, the image forming apparatus is evacuated by an ion pump while maintaining the image forming apparatus at 200 ° C., and the pressure is reduced to 10 ⁻⁵ Pa or less. Subsequently, acetone is introduced into the vacuum vessel. The introduction amount was adjusted so that the pressure was 1.3 × 10 ⁻² Pa. Subsequently, a pulse voltage is applied to the X-direction wiring. The pulse waveform is a rectangular wave pulse having a peak value of 16 V,
The pulse width is 100 μsec. 125μ per pulse
sec. The X-direction wiring to which a pulse is applied at intervals is switched to the next row, and the pulse is sequentially applied to each wiring in the row direction. As a result, 10 msec. Pulses will be applied at intervals. As a result of this processing, a deposited film containing carbon as a main component is formed in the vicinity of the electron-emitting portion of each electron-emitting device, and the device current _If increases.

(Step-1) Subsequently, the inside of the vacuum vessel is evacuated again. The evacuation was continued for 10 hours using an ion pump while maintaining the image forming apparatus at 200 ° C. This step removes organic substance molecules remaining in the vacuum vessel and prevents further deposition of the carbon-based deposition film,
This is for stabilizing the electron emission characteristics.

(Step-m) After the temperature of the image forming apparatus is returned to room temperature, a pulse voltage is applied to the X-directional wiring in the same manner as in step-k. Further, when a voltage of 5 kV is applied to the image forming member through the high voltage introducing terminal, the fluorescent film emits light. At this time, the ground connection terminal is connected to the ground. Visually, it is confirmed that there is no portion that does not emit light or a very dark portion, the application of voltage to the X-direction wiring and the image forming member is stopped, and the exhaust pipe is heated and sealed by sealing. Subsequently, getter processing is performed by high-frequency heating. Thereby, the vacuum container is completed.

(Step-n) In the step n, after the vacuum vessel is completed, the high voltage terminal 16 and the ground line connection terminal 5 are connected.
The process of attaching the electron source 05 and the wiring for driving the electron source will be described.
The high-voltage terminal 16 passes through the through-hole 102 of the rear plate 1, and the extraction wiring 504 connected to the image forming member 12.
In was used for connection to In. Thereby, the high voltage terminal 16 is electrically connected to the image forming member 12 and is also mechanically fixed to the vacuum container.

Next, the ground line connection terminal 505 also uses the solder used for the connection of the high-voltage terminal described above, and passes through the through-hole 503 of the face plate 11 to form the quartz glass 27.
It is connected to the low resistance conductor 5 formed above.

Subsequently, the electron source driving wirings 3-1 and 3-
2, 3-3 are connected to the electron source driving IC using a flexible cable (not shown).

As a result, an image forming apparatus capable of displaying a desired TV image by emitting a fluorescent material, which is an image forming member formed on the face plate 11, is completed.

When a high voltage of 6 kV was applied to the completed device to cause the phosphor to emit light and to output an image, it was confirmed that the device could be driven stably for a long time without any breakage of the element due to discharge or the like. .

In this embodiment, an image forming apparatus having the following advantages can be manufactured.

(1) Opening (recess) serving as terminal connection part
However, since the terminal connection portion does not protrude from the container since the structure is dented inside the device, it is suitable for a thin structure.

(2) Since the connection of the terminals can be performed after the formation of the vacuum vessel, a highly versatile connection method can be adopted.

(3) An image forming apparatus can be manufactured stably without lowering the yield of the apparatus.

[Second Embodiment] In a second embodiment, an example will be described in which an extraction wiring led out from the inside of a vacuum container and a connection terminal outside the vacuum container are elastically contacted inside the hollow member. FIG.
In the figure, reference numeral 301 denotes a terminal 3
02 is a fixing base for fixing the wiring, and 303 is a wiring 1 for taking out.
This is a connection spring for electrically connecting the terminal 00 and the terminal 16. The fixing table 301 is inserted into the through-hole 102 from the state of FIG. 7A to the state of FIG.
As a result, the fixing base 301 has a structure that does not fall out of the vacuum container. At this time, the connection spring 303 is spring-connected to the lead-out wiring 100 connected to the image forming member 12.

Thereafter, a silicone insulating resin material was embedded as an insulating member from a gap between the through hole 102 and the fixing base 301. This prevents moisture or moisture from adhering to a surface exposed to the atmosphere, such as a contact portion between the lead-out wiring and the connection terminal and a surface of the hollow member 101 on the atmosphere side, thereby preventing a discharge. However, when it is not necessary to embed the silicone insulating material, for example, when the voltage to be supplied is low, there is no particular need to install the silicone insulating material, and it is appropriately selected.

According to this configuration, it is possible to remove the device after the device has been attached, so that a more versatile connection is possible. For example, when performing display evaluation during the device manufacturing process, a temporary connection may be considered, and this is effective.

Embodiment 3 In Embodiment 1, the ground connection terminal 505 is introduced from the face plate 11 side, and the high voltage introduction terminal 16 is introduced from the rear plate 1 side into the vacuum vessel. 505 from the rear plate 1 side, and the high voltage introduction terminal 16 from the face plate 1
It may be introduced from one side. FIGS. 8A and 8B schematically show the structure in this case. With such a configuration, the same effect as in the first embodiment can be obtained.

[Embodiment 4] Embodiment 4 will be described with reference to FIG. D shown in FIG. 9 represents the distance between the face plate 11 and the rear plate 1. In the case where the distance is smaller than that in the first embodiment, the creepage distance of the ring-shaped member is smaller. A decrease in the creepage distance may cause a decrease in the creepage withstand voltage. Therefore, in order to lengthen the creepage distance, a part of the outer circumference and the inner circumference of the ring is cut out to form a wavy undulating shape 901 from one plane to the other plane. As a result, even when a high voltage equivalent to that in Example 1 was applied, no discharge or the like occurred, and stable driving was possible.

[Embodiment 5] The high voltage terminal 16 is set as shown in FIG. 3C of the first embodiment, and the ground connection terminal 505 is set as shown in FIG. 8A of the third embodiment. It is also possible to adopt a configuration of taking out to the plate side. FIG. 10 shows the device configuration. The description is the same as that of the first embodiment, except that the ground connection terminal through-hole 503 is provided on the rear plate 1 side.

With this configuration, both the ground connection terminal 505 to which a large current may flow and the high voltage terminal 16 to which a high voltage needs to be applied are taken out to the back side of the image forming apparatus. This is convenient for taking safety measures so as not to touch these terminals. Also,
The through holes 102, 501, and 503 need only be formed on the rear plate 1 side, and the drilling process need not be performed on the face plate 11 side, so that there is an advantage that manufacturing costs can be reduced.

[Sixth Embodiment] In a sixth embodiment, a description will be given of a display device formed by holding a high voltage terminal on the housing side. In FIG. 15A, the image forming apparatus 200
Reference numeral 0 denotes a cross-sectional structure passing through the high-pressure take-out portion manufactured using the hollow member 101, which is the same as the configuration described in the first embodiment, and a description of the configuration will be omitted. Reference numeral 2001 denotes a display device housing made of engineering plastic and A1 member, which also has a function of supporting the image forming apparatus 2000. 2003 is the wiring 100
, A ceramic insulating member for electrically insulating the high-voltage terminal from the housing 2001; 2004, cable wiring; and 2005, a high-voltage power supply. From the state shown in FIG. 16A, the image forming apparatus 2000 and the housing 2001 are combined as shown in FIG. At this time,
By adjusting the amount of protrusion between the housing 2001 and the high-voltage terminal 2003 and combining the image forming apparatus 2000,
It was configured to be electrically connected to the extraction wiring 100. The connection can be made by adjusting the amount of protrusion of the high voltage terminal 2003. However, in order to make the connection easier and more reliable, the high voltage terminal 2003 or the housing 2001 may be provided with a spring property. , According to the configuration. With this configuration, it is possible to supply a voltage from the extraction wiring 100 to the image forming member 12 through the high-voltage power supply 2005, the cable wiring 2004, and the high-voltage terminal 2003, and drive the electron source 2 by a driving circuit (not shown) to form an image. The member 2005 was able to emit light.

By providing the high-voltage terminal on the housing side as in this configuration, the following advantages can be obtained. (1) Since the assembling process can be performed in a state in which there is no protrusion of the high voltage terminal, it is not necessary to consider the protrusion of the member, and since the product can be manufactured by handling, it is possible to select a device having a high degree of freedom in a production device. At the same time, it can contribute to improving the yield. (2) The high voltage terminal mounting step need not be included in the image forming apparatus assembling step, which leads to a reduction in the processing time.

In the above embodiment, the case where the surface conduction electron-emitting device is used as the electron-emitting device constituting the electron source has been described. However, the configuration of the present invention is not limited to this. The same applies to the case where an electron source using a field emission type electron emitting device, a semiconductor electron emitting device or other various electron emitting devices is used.

In the embodiment, the rear plate of the image forming apparatus also serves as the substrate of the electron source. However, the rear plate and the substrate are separately provided, and after the electron source is formed, the substrate is fixed to the rear plate. Is also good.

In addition, within the technical idea of the present invention,
Various members shown in the embodiments may be appropriately changed.

[0167]

As described above, according to the present invention,
Since the connection of the terminals can be performed after the formation of the vacuum vessel, a highly versatile connection method can be adopted.

Thus, an image forming apparatus can be stably manufactured without lowering the yield of the apparatus.

Further, since the opening (recess) serving as the external terminal connecting portion does not protrude from the device having the thin structure,
The terminal connection portion does not protrude outside and is suitable for a thin structure.

As described above, according to the present invention, a highly reliable and thin image forming apparatus can be stably supplied.

Further, by connecting the external terminal and the external wiring by using an elastic body such as a spring, the connection can be removed after the connection is attached, so that a more versatile connection can be achieved. For example, when performing display evaluation during the device manufacturing process, a temporary connection may be considered, and this is effective.

Further, by forming the side surface of the ring-shaped hollow member into a wavy (undulating) structure, the creepage distance can be increased, and thereby the creepage withstand voltage can be increased. Is applied, no discharge or the like occurs, and stable driving is possible.

Further, by providing a low resistance conductor surrounding the electron source and connecting it to the ground, a structure resistant to discharge can be obtained.

[Brief description of the drawings]

FIG. 1 is a partially cutaway oblique schematic view showing a high-voltage connection opening of the present invention.

FIG. 2 is a plan view schematically illustrating a configuration of an example of the image forming apparatus of the present invention, and is a diagram illustrating a configuration of a rear plate and a support frame.

FIG. 3 is a cross-sectional view schematically showing a configuration of an example of the present invention shown in FIG. 2, and is AA, BB, and CC in FIG. 2, respectively.
It is a figure showing composition of a section.

FIG. 4 is a diagram illustrating a part of a manufacturing process of the image forming apparatus of the present invention.

FIG. 5 is an exploded perspective view for explaining the manufacture of the image forming apparatus of the present invention.

FIG. 6 is a diagram showing a waveform of a pulse voltage used in forming an electron emission portion of the surface conduction electron-emitting device used in the present invention.

FIG. 7 is a diagram for explaining a second embodiment of the present invention.

FIG. 8 is a schematic diagram showing another example of the configuration of the present invention.

FIG. 9 is a schematic diagram showing another example of the configuration of the present invention.

FIG. 10 is a schematic diagram showing another example of the configuration of the present invention.

FIG. 11 is a structural view for explaining an electron emitting portion of the surface conduction electron-emitting device used in the present invention.

FIG. 12 is a schematic diagram showing typical electrical characteristics of the surface conduction electron-emitting device.

FIG. 13 is a diagram illustrating a typical example of a configuration of an image forming member of the image forming apparatus of the present invention.

FIGS. 14A and 14B are an equivalent circuit diagram (A) for explaining the effect of the present invention and a schematic diagram (B) for explaining the correspondence between the equivalent circuit diagram and an actual device.

FIG. 15 is an equivalent circuit diagram for explaining a conventional technique.

FIG. 16 is a schematic diagram showing still another example of the configuration of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Rear plate 2 Electron source area 3 Electron source drive wiring 4 Support frame 5 Low resistance conductor 8 Getter 9 Getter shielding plate 11 Face plate 12 Image forming member 16 High voltage connection terminal 505 Ground connection terminal 101,502 Hollow member 102,501, 503 Through hole 100, 504 Outgoing wiring 901 Wave structure 32 Rubber cap 31 Cable 303 Connection spring 41 Base 42, 43 Device electrode 44 Conductive film 45 Electron emission part 51 Fluorescent film 52 Black conductive material 53 Phosphor 61 Image display member Point 62 Point corresponding to low-resistance conductor 5 63, 64 Point for device electrode 65 Electron emitting device 66 Capacitance between image forming member and electron source 71 Image forming member 72 Joint of vacuum vessel member 73 Electron source drive wiring 74 Electrode for capturing electrolysis current 7 Resistance of antistatic film 76 Resistance of frit glass 77 Resistance of glass between 71 and 72 78 Resistance of glass between 71 and 74 79 Power supply terminal for driving electron source 80 Resistance of wiring for driving electron source 81 Antistatic film etc. Resistance 82 of a member having a predetermined potential

Claims (31)

[Claims] 1. An image forming apparatus comprising: a container; and an image forming means disposed in the container, wherein the concave portion is provided on an outer wall of the container, and the concave portion is electrically connected to the image forming means. An image forming apparatus, wherein a drawn out electrode is arranged. 2. The image forming apparatus according to claim 1, wherein a conductor terminal is connected to the extraction electrode. And a housing for holding the container.
The image forming apparatus according to claim 1, wherein the lead electrode is connected to a conductor terminal provided on the housing. 4. The image forming apparatus according to claim 3, wherein the conductor terminal is connected to a driving unit of the image forming unit provided on the housing side. 5. The apparatus further comprises a housing for holding the container,
The image forming apparatus according to claim 2, wherein the conductor terminal is connected to a driving unit of the image forming unit provided on the housing side. 6. The image forming apparatus according to claim 1, wherein the image forming unit includes an electron source and an image forming member that forms an image by irradiating electrons from the electron source. 7. The opening provided on one of the substrate on which the electron source is disposed and the substrate on which the image forming member is disposed opposed to the substrate, and a side surface of the opening. The image forming apparatus according to claim 6, wherein the image forming apparatus is formed by a member and the other substrate. 8. The concave portion includes an opening provided on a substrate on which the electron source is disposed, a side member of the opening, and a substrate disposed opposite to the substrate and on which the image forming member is disposed. The image forming apparatus according to claim 6, wherein the image forming apparatus is formed. 9. The image forming apparatus according to claim 6, wherein the extraction electrode is connected to an electrode for applying a voltage to the image forming member.
An image forming apparatus according to claim 1. 10. The image forming apparatus according to claim 9, wherein a conductor terminal is connected to the extraction electrode. 11. The image forming apparatus according to claim 9, further comprising a housing for holding the container, wherein the lead electrode is connected to a conductor terminal provided on the housing. 12. The image forming apparatus according to claim 11, wherein the conductor terminal is connected to a voltage source provided on the housing side for applying a voltage to the image forming member. 13. The image forming apparatus according to claim 13, further comprising a housing for holding the container, wherein the conductor terminal is connected to a voltage source provided on the housing side for applying a voltage to the image forming member. Item 11. The image forming apparatus according to Item 10. 14. A conductive member disposed on an inner wall surface of the container between the electron source and the image forming member; and the electron source and the electron connected to the conductive member to ground. Current path A without any of the source drive circuits
7. The resistance of the current path A according to claim 6, wherein the resistance of the current path A is connected to the ground from the conductive member, and is lower than the resistance of any current path B via the electron source or the drive circuit. Image forming device. 15. The image forming apparatus according to claim 14, wherein the image forming apparatus has a plurality of the concave portions, and a part of the conductive member is drawn out to another concave portion. 16. An opening provided on one of a substrate on which the electron source is disposed and the substrate on which the image forming member is disposed opposite to the substrate on which the electron source is disposed; The image forming apparatus according to claim 15, wherein the image forming apparatus is formed by the side member of (b) and the other substrate. 17. The another concave portion, wherein an opening provided on a substrate on which the electron source is disposed, a side member of the opening, and a substrate on which the image forming member is disposed opposed to the substrate. The image forming apparatus according to claim 15, wherein the image forming apparatus is formed by: 18. The image forming apparatus according to claim 15, wherein a conductor terminal is connected to the conductive member drawn into the recess. 19. The image forming apparatus according to claim 14, wherein the conductive member is disposed all around the electron source. 20. The image forming apparatus according to claim 14, wherein an antistatic film is provided on an inner wall surface of the container. 21. The image forming apparatus according to claim 20, wherein the antistatic film is electrically connected to the conductive member. 22. An inner wall surface of the container having a resistance of 10 ⁸ Ω / port.
The image forming apparatus according to claim 14, further comprising a conductive film having a sheet resistance value of 10 ¹⁰ Ω / port. 23. The image forming apparatus according to claim 22, wherein the conductive film is electrically connected to the conductive member. 24. The image forming apparatus according to claim 2, wherein a green member is embedded in the concave portion. 25. The image forming apparatus according to claim 2, wherein the lead electrode and the conductor terminal are connected via a conductive elastic body. 26. The image forming apparatus according to claim 6, wherein the image forming member has a phosphor and an electrode. 27. The image forming apparatus according to claim 6, wherein the image forming member has a phosphor and a metal back. 28. The image forming apparatus according to claim 6, wherein said electron source has a plurality of electron-emitting devices connected by wiring. 29. The image forming apparatus according to claim 6, wherein the electron source is an electron source in which a plurality of electron-emitting devices are connected in a matrix by a plurality of row wirings and a plurality of column wirings. 30. The image forming apparatus according to claim 28, wherein the electron-emitting device is a cold-cathode-type electron-emitting device. 31. The image forming apparatus according to claim 30, wherein the cold cathode type electron-emitting device is a surface conduction electron-emitting device.