JPH10242133A - Method and device for manufacturing semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the occurrence of a failure due to the insufficient residual amount of a reaction gas. SOLUTION: A semiconductor manufacturing device is composed of a CVD reaction furnace 3 in which a semiconductor wafer 1 is CVD treated in an atmosphere isolated from the outside air, a vacuum exhaust system 4 which is connected to the furnace 3 to evacuate the furnace 3 to a vacuum, a gas supply system 5 which is connected to the furnace 3 to supply a reaction gas 2 to the furnace 3 from a gas cylinder 5a, a cumulative gas flowmeter 7 which detects the usage of the gas 2 in the furnace 3 and deduces the cumulative usage In+1 of the gas 2, and a control section 8 which discriminates the propriety of CVD treatment by comparing the cumulative usage In+1 of the gas 2 with a preset allowable value K of the usage of the gas 2 and transmits compared result signals to the furnace 3. Since the cumulative gas flowmeter 7 and control section 8 are connected to the gas supply system 5, the manufacturing device performs the CVD treatment while the residual quantity of the gas 2 in the gas cylinder 5a is monitored.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technique, and more particularly to a semiconductor manufacturing method and apparatus for monitoring the cumulative usage of a reaction gas and preventing a failure due to a shortage of remaining gas.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
Upon completion, they were examined by the inventor, and the outline is as follows.

[0003] A CVD (Chemical) is an example of a semiconductor manufacturing apparatus that includes a processing unit such as a reaction furnace and performs a film forming process on a semiconductor wafer to be processed using a reaction gas.
Vapor Deposition devices are known.

Here, the CVD apparatus is roughly classified into a state of a processing unit at the time of film formation processing, and a normal pressure CVD apparatus for performing film formation processing under atmospheric pressure, and a low pressure (0.1 to 10 Torr) state. There is a low-pressure CVD apparatus for performing a film forming process.

In a semiconductor manufacturing process, a semiconductor element is formed by forming a desired film on a semiconductor wafer and repeating the processing of this film and the formation of another film.

[0006] The film is formed by supplying a desired reaction gas (also referred to as a process gas) to a processing section.

At this time, the reaction gas is supplied from a gas cylinder which is a gas supply source, and the amount of the reaction gas used in performing the process is controlled by the weight of the gas cylinder and the number of starts (the number of processes). The gas cylinder is being replaced when the usage reaches the specified value.

[0008] Regarding various CVD techniques, for example, Ohm Co., Ltd., issued on June 20, 1989,
"Introduction to ultra-fine processing" Furukawa Shizujiro, and one other author (author), 1
It is described on pages 10-117.

[0009]

However, in the method for managing the amount of reaction gas used according to the above-mentioned technique, in the management based on the weight of the gas cylinder, an installation object such as a fixed belt or an emergency shutoff valve is attached to the gas cylinder. Therefore, accurate weight cannot be measured, and it is difficult to control the remaining amount of the reaction gas.

In the management based on the number of starts, the management when the film thickness specifications are different becomes inaccurate.

Therefore, for these reasons, there occurs a problem that the remaining gas amount of the reaction gas becomes insufficient during the processing, and a film thickness specification defect occurs when a film is formed on a semiconductor wafer.

An object of the present invention is to provide a method and an apparatus for manufacturing a semiconductor, which prevent the occurrence of defects due to a shortage of the remaining amount of a reactive gas.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0014]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, in the semiconductor manufacturing method of the present invention, an object to be processed is processed using a reaction gas, and the processing is performed by supplying the reaction gas to a processing section where the processing of the object to be processed is performed. When performing, while detecting the usage amount of the reaction gas, a step of deriving the gas cumulative usage amount that is the cumulative usage amount of the reaction gas, and a gas usage allowance value and the gas set in advance when performing the process Comparing the accumulated usage amount with the processing unit to determine whether or not the processing can be performed, and transmitting a signal of the determination result to the processing unit; and responding to the processing unit based on a processable signal from the determination result. Supplying a gas to perform predetermined processing on the object to be processed.

[0016] This makes it possible to accurately grasp the cumulative amount of the reaction gas used, and to automatically and accurately manage the remaining amount of the reaction gas in the gas supply source.

Further, since the control unit is connected to the gas supply system, it is not necessary for the operator to check the usage amount of the reaction gas every time the processing is performed. It is possible to prevent the occurrence of defects due to the construction (processing).

Further, in the semiconductor manufacturing method of the present invention, the film is formed on the semiconductor wafer by supplying the reaction gas into the processing section when processing the semiconductor wafer as the object to be processed. is there.

Further, the semiconductor manufacturing apparatus of the present invention performs processing on an object to be processed by using a reaction gas, and comprises a processing section for performing the processing of the object to be processed in an atmosphere cut off from the outside air; A vacuum exhaust system connected to the processing unit and evacuating the processing unit, a gas supply system connected to the processing unit and supplying the reaction gas from the gas supply source to the processing unit, and the reaction in the processing. Detect gas usage and derive gas accumulation usage that is the cumulative usage of the reaction gas, and compare the gas usage allowance and the gas accumulation usage set in advance when performing the process. A control unit for determining whether or not the processing can be performed, and transmitting a signal of the determination result to the processing unit, wherein the control unit is connected to the gas supply system.

[0020]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a structural view showing an example of an embodiment of a basic structure of a semiconductor manufacturing apparatus according to the present invention, and FIG. 2 is an example of an embodiment of a structure of a low-pressure CVD apparatus which is a semiconductor manufacturing apparatus of the present invention. FIG. 3 is a flow chart showing an example of an embodiment of a procedure for judging the possibility of start of construction in the semiconductor manufacturing method of the present invention.

The semiconductor manufacturing apparatus described in the present embodiment performs a desired process on a semiconductor wafer 1 as an object to be processed in a processing section using a reaction gas 2. The semiconductor wafer 1 is controlled while controlling the remaining amount of the reaction gas 2 in the gas cylinder 5a as a gas supply source.
Is performed.

In this embodiment, a low-pressure CVD apparatus will be described as an example of a semiconductor manufacturing apparatus for performing desired processing on a semiconductor wafer 1 using a reaction gas 2.

Therefore, the processing on the semiconductor wafer 1 performed in the present embodiment is a film forming processing (CVD processing).

First, the basic configuration of the semiconductor manufacturing apparatus shown in FIG. 1 will be described with reference to FIGS. 1 and 2.
A CVD reactor 3 (processing section) for processing the semiconductor wafer 1 in an atmosphere cut off from the outside air, a gas cylinder 5 a serving as a gas supply source storing a reaction gas 2, and a gas cylinder 5
a) a mass flow controller 6 for adjusting the flow rate of the reaction gas 2 to be supplied to the CVD reactor 3 from a, and a gas cumulative usage which detects the usage of the reaction gas 2 in the CVD reactor 3 and is the cumulative usage of the reaction gas 2 compared to the amount I _{n + 1} gas cumulative flow meter 7 derive (gas accumulated amount detecting means), and a gas consumption allowable value K and the gas accumulated amount I _{n + 1} which is set in advance when performing the CVD process And a control unit 8 for determining whether or not the CVD processing is possible, and transmitting a signal of the determination result to the CVD reactor 3.

Next, a detailed configuration of a low-pressure CVD apparatus which is an example of the semiconductor manufacturing apparatus shown in FIG. 2 will be described with reference to FIGS.

The low-pressure CVD apparatus employs the mechanism shown in FIG.
A VD reactor 3 (also simply referred to as a reactor), a vacuum exhaust system 4 connected to the CVD reactor 3 and evacuating the CVD reactor 3, and a gas cylinder 5a connected to the CVD reactor 3 and supplying the reaction gas 2 A gas supply system 5 for supplying gas from the gas supply source to the CVD reactor 3, the gas cumulative flow meter 7, and the control unit 8. Is connected.

The low-pressure CVD apparatus is of a hot wall type and is of a batch processing type in which a plurality of semiconductor wafers 1 are simultaneously processed. In this embodiment, dichlorosilane (SiH ₂ Cl ₂ )
A case in which a silicon nitride film (Si ₃ N ₄ ) is formed on a silicon semiconductor wafer 1 using silicon and ammonia (NH ₃ ) will be described.

Since the low-pressure CVD apparatus is of a hot-wall type, a large number of resistance heaters 9 are installed near the outside of the CVD reactor 3. Heat 1
There, a reactive gas 2 is supplied to form a desired thin film on the semiconductor wafer 1 by a chemical reaction.

Here, the CVD reaction furnace 3 is formed of quartz or the like, and a sample stage 3a capable of supporting a large number of semiconductor wafers 1 during the CVD process and formed of quartz or the like is provided therein.

Further, at one end of the CVD reactor 3, a gate valve 3b which is opened and closed when the semiconductor wafer 1 is loaded and unloaded is provided, and a pressure sensor 3c for detecting the internal pressure is attached. .

The gas cumulative flow meter 7 is connected to the gas supply system 5 as gas cumulative use amount detecting means, and the reaction gas 2 is supplied from the gas cylinder 5 a to the CVD reactor 3.
Each time is supplied, the supply gas amount I (use amount) of the reaction gas 2 which has passed through the gas accumulation flow meter 7 is detected, and the supply gas amount I
Is added to obtain a new gas accumulated usage amount In _{+ 1} .

Therefore, the gas accumulation flow meter 7 has a function of storing the accumulated gas use amount In _{+ 1} after accumulation.

Further, the control unit 8 is connected to the gas accumulating flow meter 7 connected to the gas supply system 5 and the CVD reactor 3, and when performing the CVD process, sets a gas usage amount allowable value K set in advance. Is compared with the accumulated gas use amount In _{+ 1} calculated by the accumulated gas flow meter 7 to judge whether or not to perform the CVD process (whether or not to start the construction), and the signal of the judgment result is sent to the CVD reactor. 3.

[0035] Incidentally, the determination of the construction of the control unit 8, which performed by comparing the gas cumulative consumption I _{n + 1} gas consumption tolerance K, the gas accumulated amount I _{n + 1} When the gas usage amount is larger than the allowable value K, a signal indicating that the CVD process (start of construction) is not possible is transmitted to the CVD reactor 3 and when the cumulative gas usage amount In _{+ 1} is smaller than the gas usage amount allowable value K. Then, a signal indicating that the CVD process (construction) is possible is transmitted to the CVD reactor 3.

Here, the vacuum pumping system 4 connected to the CVD reactor 3 is provided with a vacuum pump 4b for evacuating the inside of the CVD reactor 3 and an opening / closing valve 4a.

Further, the gas supply system 5 connected to the CVD reactor 3 is provided with an opening / closing valve 5b and an opening / closing valve 5c for preventing or enabling the flow of the reaction gas 2.

A purge gas supply system 10 for supplying a purge gas into the CVD reactor 3 is provided in the CVD reactor 3.
There are connected, the purge gas supply system 10, and N ₂ gas supply unit 10b for supplying a N ₂ gas 10a in the CVD reactor 3 as the purge gas on-off valve to prevent or permit the flow of N ₂ gas 10a 10c are provided.

The semiconductor manufacturing method according to the present embodiment will be described.

In the present embodiment, as an example of the CVD process, a case where a silicon nitride film having a thickness of 500 angstroms is formed on the semiconductor wafer 1 by using two kinds of reaction gases 2, dichlorosilane and ammonia. explain.

First, the inside of the CVD reactor 3 is heated to a predetermined temperature by the resistance heater 9.

In this embodiment, since the silicon nitride film is formed using dichlorosilane and ammonia, the temperature in the CVD reactor 3 reaches 750 to 800 ° C., preferably about 780 ° C. And heat.

As a result, the semiconductor wafer 1 is also heated to about 780 ° C.

Subsequently, the on-off valve 10c provided in the purge gas supply system 10 is opened, and the N ₂ gas supply section 10b is opened.
Supplies the N ₂ gas 10 a into the CVD reactor 3, thereby forming an atmosphere of the N ₂ gas 10 a in the CVD reactor 3.

Thereafter, the gate valve 3b provided in the CVD reactor 3 is opened, a predetermined number of semiconductor wafers 1 (for example, about 100) are loaded into the CVD reactor 3, and the semiconductor wafers 1 are loaded on the sample table 3a. Is placed.

Further, the gate valve 3b is closed and CVD is performed.
The reactor 3 is sealed, and the inside of the CVD reactor 3 is evacuated to a predetermined vacuum level by a vacuum pump 4b provided in a vacuum evacuation system 4.

At this time, while measuring the degree of vacuum in the CVD reactor 3 with the pressure sensor 3c, 0.1 to 1 Torr,
Preferably, it is set to about 0.2 Torr.

Thereafter, in the gas supply system 5, the on-off valve 5
b and the on-off valve 5c are opened, and the gas cylinder 5a is
Two kinds of reaction gases 2 (here, dichlorosilane and ammonia) are supplied to the reaction furnace 3.

When the CVD process is performed by supplying the reaction gas 2 to the CVD reactor 3, the usage amount of the reaction gas 2 is detected by the gas accumulation flow meter 7, and the accumulated usage amount of the reaction gas 2 is measured. A gas cumulative usage amount In _{+ 1} is derived.

First, the gas cumulative flow meter 7 executes the gas cumulative usage amount In recognition 20 for recognizing the gas cumulative usage amount In stored up to the previous time stored in the gas cumulative flow meter 7.

Subsequently, in performing the current CVD process, the reaction gas 2 passing through the gas accumulation flow meter 7
The supplied gas amount I detection 21 for detecting the supplied gas amount I (used amount) is executed.

Thus, the supply gas amount I of the reaction gas 2 is counted by the gas accumulation flow meter 7.

Further, the supplied gas amount I is added to the gas accumulated use amount In up to the previous time by the gas accumulated flow meter 7 to derive (calculate) a new gas accumulated use amount In _{+ 1.} The quantity In _{+ 1} calculation 22 is performed.

Thus, the gas cumulative usage amount In _{+ 1} of the reaction gas 2 is calculated by the gas cumulative flow meter 7.

Thereafter, the control unit 8 compares the gas use amount allowable value K set in advance with the gas use amount In _{+ 1} calculated by the gas accumulation flowmeter 7 to start the CVD process (process). A) Start of work determination 23 is performed to determine whether or not work is possible.

Here, when the accumulated gas use amount In _{+ 1} is larger than the gas use amount allowable value K, that is, In _{+ 1} <
If the relationship of K is not satisfied (including the case where both are equal), it is determined that the CVD process cannot be performed because the remaining amount of the reaction gas 2 is small, and it is determined that the process (CVD process) is not possible.

Therefore, a signal indicating the result of the judgment that the CVD process is impossible is transmitted to the CVD reactor 3.

As a result, in the CVD reactor 3, C
An alarm warning 24 for receiving a signal indicating that VD processing is impossible and issuing an alarm is executed, and an alarm is issued from the CVD reactor 3.

Thus, the operator can recognize that it is time to replace the gas cylinder 5a, and execute the cylinder replacement 25 for replacing the gas cylinder 5a.

In the start / stop determination 23, if the cumulative gas usage I _{n + 1} is smaller than the allowable gas usage K, that is, if the relationship of In _{+ 1} <K is satisfied, the start of the process (CVD) Processing) is determined to be possible.

Thus, a signal indicating the result of the judgment that the CVD process is possible is transmitted to the CVD reactor 3 and the gas cylinder 5a.

As a result, a start (CVD process) start 26 of supplying the reaction gas 2 to the CVD reactor 3 is executed based on the signal indicating that the CVD process is possible from the above determination result.

Thereafter, the reaction gas 2 is adjusted to a predetermined flow rate by the mass flow controller 6 in the gas supply system 5 for a predetermined time (for example, about 40 minutes when a silicon nitride film having a thickness of 500 Å is formed). 2 is supplied to a CVD reactor 3 to perform a CVD process, that is, a film forming process on the semiconductor wafer 1.

As a result, a desired silicon nitride film can be formed on the semiconductor wafer 1.

The CVD process is terminated by stopping the supply of the reaction gas 2.

After the completion of the CVD process, the purge gas supply system 10
The N ₂ gas 10a from the N ₂ gas supply unit 10b to C
The CVD reactor 3 is supplied to the VD reactor 3 and evacuated in the vacuum evacuation system 4 by the vacuum pump 4b.

Thus, an atmosphere of N ₂ gas 10a is formed in the CVD reactor 3.

Thereafter, the gate valve 3b is opened and the CVD
The processed semiconductor wafer 1 is carried out.

Subsequently, when another CVD unprocessed semiconductor wafer 1 is subjected to the CVD process, a predetermined number of the unprocessed semiconductor wafers 1 are transported again into the CVD reaction furnace 3, and the above-described CVD processing method The CVD process is performed in a similar procedure.

According to the semiconductor manufacturing method and apparatus (low-pressure CVD apparatus) of the present embodiment, the following operational effects can be obtained.

That is, the gas supply system 5 for supplying the reaction gas 2 to the CVD reactor 3 is provided with a gas accumulation flow meter for detecting the usage amount of the reaction gas 2 and deriving the gas usage amount I _{n + 1} of the reaction gas 2. 7 (cumulative gas use detecting means), and compares the gas use allowance K set in advance with the gas use I _{n + 1} to judge whether or not the CVD process is to be started.
Since the control unit 8 for transmitting the signal of the determination result is connected to the reaction furnace 3, the accumulated gas usage I _{n + 1} of the reaction gas 2 is obtained.
Can be accurately grasped, and the remaining gas amount of the reaction gas 2 in the gas cylinder 5a can be automatically and accurately managed.

That is, since the control unit 8 is connected to the CVD reaction furnace 3, the operator does not need to check the usage amount of the reaction gas 2 every time the CVD process is performed. It is possible to prevent the occurrence of defects due to erroneous construction (CVD processing) in the state.

This makes it possible to automatically and accurately manage the remaining amount of the reaction gas 2 in the gas cylinder 5a. Generation can be prevented.

Each time the reactant gas 2 is supplied, the amount of the reactant gas 2 that has passed through the gas accumulation flow meter 7 (the amount of the reactant gas 2 used) is counted, and the accumulated value before the passage (the accumulated gas use amount) is counted. In), the new gas accumulated usage amount In _{+ 1} can be calculated with high accuracy.

As a result, the accumulated gas use amount In _{+ 1} can be grasped with high accuracy, and the remaining amount of the reaction gas 2 remaining in the gas cylinder 5a can be managed with high accuracy.

As a result, the gas cylinder 5a can be used until the reaction gas 2 remaining in the gas cylinder 5a becomes almost zero, thereby optimizing the replacement time of the gas cylinder 5a. The reaction gas 2 can be used efficiently.

Although the invention made by the inventor has been specifically described based on the embodiments of the present invention, the present invention is not limited to the embodiments of the invention, and does not depart from the gist of the invention. It is needless to say that various changes can be made.

For example, the low-pressure CV in the above embodiment
In the D apparatus (semiconductor manufacturing apparatus), the case where the control unit 8 and the gas accumulation flow meter 7 are separately connected to the gas supply system 5 has been described, but the control unit 8 has the function of the gas accumulation flow meter 7. It may have a combination.

That is, the control unit 8 detects the usage amount of the reaction gas 2 in the CVD process and derives the gas usage amount I _{n + 1} which is the cumulative usage amount of the reaction gas 2.
When the CVD process is performed, a gas usage allowable value K set in advance and the gas usage usage In _{+ 1} are compared to determine the CV.
It determines whether or not the D processing is possible, and transmits a signal of the determination result to the CVD processing.

In this case, since the control unit 8 also has the function of the gas accumulation flow meter 7, it is only necessary to connect the control unit 8 to the gas supply system 5 of the low pressure CVD apparatus.
The structure of the D device can be relatively simplified.

When the control unit 8 having the function of the gas accumulation flow meter 7 is connected to the gas supply system 5, it may be connected to any part of the gas supply system 5.

For example, if it is not possible to connect to the vicinity of the CVD reactor 3, the gas cylinder 5a in the gas supply system 5
May be connected in the vicinity of the control unit 8, and in this case, the control unit 8 can be easily connected to the gas supply system 5.

Further, the control section 8 may have a function of recording the gas usage amount for each start recipe.

This is because, in the case of a low-pressure CVD apparatus, the amount of use of the reaction gas 2 for each film thickness specification is previously written in the control program of the control unit 8, and the control unit 8 automatically executes the control program every time the control program is executed. First, the usage amount of the reaction gas 2 for each film thickness specification is recognized.

As a result, it is possible to easily calculate the cumulative usage of the reaction gas 2 without using the gas cumulative flow meter 7.

Therefore, the gas flow meter 7 is not required, and the structure of the low-pressure CVD apparatus can be simplified.

In the above embodiment, the case where the control unit 8 and the gas cumulative flow meter 7 are connected to the gas supply system 5 has been described. However, the control unit 8 and the gas cumulative flow meter 7 It may be connected to another processing gas supply system such as the supply system 10.

That is, when the gas to be supplied in the other processing gas supply system is not supplied by a factory pipe or the like whose use amount is not so limited, but is limited by the use amount such as a gas cylinder, By connecting the control unit 8 and the gas accumulation flow meter 7 to the other processing gas supply system, the remaining amount of the gas can be managed with high accuracy.

In the above embodiment, the CVD
In describing the processing procedure, a case was described in which the CVD processing was started from a state in which heating in the CVD reaction furnace 3 and formation of the atmosphere of the N ₂ gas 10a were not performed. When the wafer 1 is subjected to the CVD process, the semiconductor wafer 1 to be subjected to the CVD process is loaded from the state in which the heating in the CVD reaction furnace 3 and the formation of the atmosphere of the N ₂ gas 10a are performed, and the CVD process is started. In this case, only the procedure from the loading of the semiconductor wafer 1 to the unloading of the semiconductor wafer 1 after the CVD process is repeated.

In the above-described embodiment, the case of CVD processing has been described as an example of the semiconductor manufacturing method and apparatus.
It is needless to say that the present invention is not limited to the VD process, but can be applied to other semiconductor manufacturing processes such as dry etching and ion implantation as long as the device uses a gas in the semiconductor manufacturing process and its processing method (manufacturing method). .

[0091]

Advantageous effects obtained by typical ones of the inventions disclosed by the present application will be briefly described as follows.
It is as follows.

(1). A gas supply system for supplying the reaction gas to the processing section, a gas accumulation use detection means for detecting the use amount of the reaction gas and deriving the gas use amount of the reaction gas, and a preset gas use amount allowable value and gas accumulation amount The control unit is connected to the control unit for comparing the amount of use with the control unit to determine whether or not processing is possible and to send a signal indicating the result of determination to the processing unit. Can be managed. As a result, it is possible to prevent the occurrence of a failure due to erroneous construction in a state where the remaining gas amount of the reaction gas is insufficient, thereby preventing a film thickness defect due to a shortage of the reaction gas during the construction due to a misunderstanding of the usage amount. Generation can be prevented.

(2). Each time the reactant gas is supplied, the amount of the reactant gas that has passed through the gas cumulative use amount detecting means is counted, and this is added to the accumulated value before the passage, so that a new cumulative gas use amount can be calculated with high accuracy. This allows
Since the accumulated gas usage can be grasped with high accuracy, the remaining amount of the reaction gas remaining in the gas supply source can be managed with high accuracy.

(3). According to the above (2), the gas supply source can be used until the reaction gas remaining in the gas supply source becomes almost zero, whereby the replacement time of the gas supply source can be optimized and the reaction time can be improved. Gas can be used efficiently.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing an example of an embodiment of a basic structure of a semiconductor manufacturing apparatus according to the present invention.

FIG. 2 is a conceptual diagram showing an example of the structure of a low-pressure CVD apparatus as a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 3 is a flowchart showing an example of an embodiment of a procedure for determining whether or not to start a work in the semiconductor manufacturing method according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer (processed object) 2 Reaction gas 3 CVD reactor (processing part) 3a Sample stand 3b Gate valve 3c Pressure sensor 4 Vacuum exhaust system 4a Open / close valve 4b Vacuum pump 5 Gas supply system 5a Gas cylinder (gas supply source) 5b open / close valve 5c open / close valve 6 mass flow controller 7 cumulative gas flow meter (cumulative gas usage detection means) 8 control unit 9 resistance heater 10 purge gas supply system 10a N ₂ gas 10b N ₂ gas supply unit 10c open / close valve 20 cumulative gas use Recognition of quantity In 21 Supply gas quantity I detection 22 Calculated cumulative gas usage I In _{+ 1} 23 Judgment of work start / stop 24 Alarm warning 25 Cylinder replacement 26 Start of work

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Tomio Honda 5-20-1, Josuihonmachi, Kodaira-shi, Tokyo Inside Semiconductor Division, Hitachi, Ltd. (72) Inventor Masayoshi Yoshida Josuihoncho, Kodaira-shi, Tokyo 5--20-1, Hitachi Semiconductor Co., Ltd. Semiconductor Division (72) Inventor Hiroaki Wakabayashi 5--20-1, Kamisumihonmachi, Kodaira-shi, Tokyo Semiconductor Co., Ltd.

Claims (8)

[Claims] 1. A semiconductor manufacturing method for processing an object to be processed using a reaction gas, wherein the processing is performed by supplying the reaction gas to a processing unit where the processing of the object is performed. Detecting the usage amount of the reaction gas, and deriving a gas usage amount that is the cumulative usage amount of the reaction gas, and setting a gas usage amount allowable value and the gas usage amount set in advance when performing the process. Comparing and determining whether or not the processing is possible, and transmitting a signal of the determination result to the processing unit; and supplying the reaction gas to the processing unit based on a processable signal from the determination result. Performing a predetermined process on the object to be processed. 2. The semiconductor manufacturing method according to claim 1, wherein the gas use amount is compared with the gas use amount and the gas use amount is larger than the gas use amount. Determining that processing is impossible, and transmitting a signal indicating that processing is not possible to at least the processing unit. 3. The semiconductor manufacturing method according to claim 2, wherein the processing unit issues an unprocessable alarm by transmitting the unprocessable signal to the processing unit. . 4. The semiconductor manufacturing method according to claim 1, wherein when the semiconductor wafer as the object to be processed is processed, the reactive gas is supplied into the processing unit. A semiconductor manufacturing method comprising: performing a film forming process on a semiconductor device; 5. A semiconductor manufacturing apparatus for performing processing on an object using a reaction gas, wherein the processing unit performs the processing on the object in an atmosphere cut off from outside air, and is connected to the processing unit. And a vacuum exhaust system for evacuating the processing unit, a gas supply system connected to the processing unit and supplying the reaction gas from the gas supply source to the processing unit, and use of the reaction gas in the processing. Detecting the amount and deriving a gas cumulative usage amount that is the cumulative usage amount of the reaction gas, and comparing the gas usage amount preset value and the gas cumulative usage amount set in advance when performing the process, for the process. A control unit for determining whether or not the determination is possible and transmitting a signal indicating the determination result to the processing unit, wherein the control unit is connected to the gas supply system. 6. A semiconductor manufacturing apparatus for performing processing on an object using a reaction gas, wherein the processing unit performs the processing on the object in an atmosphere that is cut off from outside air, and is connected to the processing unit. And a vacuum exhaust system for evacuating the processing unit, a gas supply system connected to the processing unit and supplying the reaction gas from the gas supply source to the processing unit, and use of the reaction gas in the processing. Gas amount detection means for detecting the amount, and deriving a gas cumulative use amount that is the cumulative use amount of the reaction gas, and a gas use amount allowable value and the gas cumulative use amount set in advance when performing the process. And a control unit for determining whether or not the processing can be performed, and transmitting a signal of the determination result to the processing unit, wherein the gas supply system includes the gas cumulative usage amount detection unit and the control unit. It is specially connected Semiconductor manufacturing equipment. 7. The semiconductor manufacturing apparatus according to claim 6, wherein a cumulative gas flow meter is connected to said gas supply system as said cumulative gas usage detecting means. 8. The semiconductor manufacturing apparatus according to claim 5, wherein the reaction gas is supplied into the processing unit,
A semiconductor manufacturing apparatus, which is a low-pressure CVD apparatus for performing a film forming process on a semiconductor wafer as the object to be processed.