JPH1022245A - Method and apparatus for removing foreign matter from semiconductor device - Google Patents
Method and apparatus for removing foreign matter from semiconductor deviceInfo
- Publication number
- JPH1022245A JPH1022245A JP17315196A JP17315196A JPH1022245A JP H1022245 A JPH1022245 A JP H1022245A JP 17315196 A JP17315196 A JP 17315196A JP 17315196 A JP17315196 A JP 17315196A JP H1022245 A JPH1022245 A JP H1022245A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- semiconductor substrate
- foreign matter
- wafer stage
- sherbetized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体素子の製造
中に付着した異物の除去方法及びその装置に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for removing foreign matter adhering during the manufacture of a semiconductor device.
【０００２】[0002]
【従来の技術】一般に、従来の異物除去装置は、高水圧
の純水を半導体基板に照射して物理的に異物を除去する
ハイプレッシャ型や、半導体基板に低水圧の純水を流
し、ベルクリン等で半導体基板を擦りながら、物理的に
異物を除去するブラシ型や、純水を超音波洗浄槽に満た
し、その中に半導体基板を入れ、振動で物理的に異物を
除去するメガソニック型がある。2. Description of the Related Art In general, a conventional foreign matter removing apparatus is of a high-pressure type in which high-pressure pure water is applied to a semiconductor substrate to physically remove foreign matter, or a low-pressure pure water is supplied to a semiconductor substrate to remove the foreign matter. A brush type that physically removes foreign substances while rubbing the semiconductor substrate with a tool, or a megasonic type that fills an ultrasonic cleaning tank with pure water, puts the semiconductor substrate in it, and physically removes foreign substances by vibration. is there.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記し
た従来の半導体素子の異物除去装置では、ハイプレッシ
ャ型の場合、チャージアップによる静電破壊、高圧力に
よる構造物ダメージ、有機膜等のフィルムが除去できな
い等の問題がある。また、ブラシ型の場合、半導体基板
に擦り傷が発生し易く、基板中央に異物が集中する問題
があり、また、有機膜等のフィルムが除去できず、水量
や、ブラシ圧力の制御が難しい問題もある。However, in the above-described conventional foreign matter removing apparatus for a semiconductor device, in the case of a high pressure type, electrostatic breakdown due to charge-up, structural damage due to high pressure, and removal of a film such as an organic film. There are problems such as inability to do so. Also, in the case of the brush type, there is a problem that abrasion easily occurs on the semiconductor substrate, foreign matter is concentrated at the center of the substrate, and a film such as an organic film cannot be removed, and it is difficult to control a water amount and a brush pressure. is there.
【０００４】更に、メガソニック型は、超音波による構
造物ダメージが発生し易く、半導体基板の位置によって
ダメージが大きく変化する問題があり、周波数や、パワ
ーの制御が難しいといった問題点があった。本発明は、
上記問題点を除去し、高圧力及び超音波が不要で、構造
物ダメージや半導体基板中央の異物集中を除去可能な半
導体素子の異物除去方法及びその装置を提供することを
目的とする。Furthermore, the megasonic type has a problem that structural damage due to ultrasonic waves is apt to occur, and the damage greatly changes depending on the position of the semiconductor substrate, and it is difficult to control the frequency and the power. The present invention
It is an object of the present invention to provide a method and an apparatus for removing foreign matter of a semiconductor element, which eliminate the above problems, eliminate the need for high pressure and ultrasonic waves, and can remove structural damage and foreign matter concentration at the center of a semiconductor substrate.
【０００５】[0005]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 〔１〕半導体素子の異物除去方法において、冷凍機能付
きウエハステージに半導体基板を固定する工程と、この
半導体基板上に０．１〜１％ＨＦ溶液を回転塗布する工
程と、前記ウエハステージを−１〜−１５０℃に降温さ
せ、前記ＨＦ溶液をシャーベット化する工程と、このシ
ャーベット化されたＨＦ溶液に圧力板を押し付け、前記
ウエハステージを回転させる工程と、前記半導体基板を
常温まで昇温させ、前記シャーベット化されたＨＦ溶液
を解かし、回転水洗する工程とを順に施すようにしたも
のである。According to the present invention, there is provided a method for removing foreign matter from a semiconductor device, comprising the steps of: fixing a semiconductor substrate to a wafer stage having a freezing function; Applying a 0.1 to 1% HF solution to the varnish, cooling the wafer stage to -1 to -150 ° C., and sherbeting the HF solution, and applying a pressure plate to the sherbetized HF solution. To rotate the wafer stage, and to raise the temperature of the semiconductor substrate to room temperature, to melt the sherbetized HF solution, and to perform a rotary washing process.
【０００６】〔２〕半導体素子の異物除去装置におい
て、冷凍機能付きウエハステージと、このウエハステー
ジ上に半導体基板を固定する手段と、前記半導体基板上
に０．１〜１％ＨＦ溶液を回転塗布する手段と、前記ウ
エハステージを−１〜−１５０℃に降温させ、前記ＨＦ
溶液をシャーベット化する手段と、このシャーベット化
されたＨＦ溶液に押し付けられる圧力板と、前記シャー
ベット化されたＨＦ溶液に前記圧力板を押し付け、前記
ウエハステージを回転させる手段と、前記半導体基板を
常温まで昇温させ、前記シャーベット化されたＨＦ溶液
を解かし、回転水洗する手段とを設けるようにしたもの
である。[2] In a device for removing foreign matter from a semiconductor element, a wafer stage with a freezing function, a means for fixing a semiconductor substrate on the wafer stage, and a 0.1-1% HF solution spin-coated on the semiconductor substrate. Means for lowering the temperature of the wafer stage to -1 to -150 ° C,
Means for forming the solution into a sherbet, a pressure plate pressed against the sherbetized HF solution, means for pressing the pressure plate against the sherbetized HF solution to rotate the wafer stage, and setting the semiconductor substrate at room temperature. And a means for rotating the HF solution converted into a sherbet and rotating and washing with water.
【０００７】上記したように、０．１〜１％のＨＦ溶液
を−１〜−１５０℃に凍らせて、シャーベット化させる
ため、半導体基板と異物の間に染み込んだＨＦ溶液が１
０％体積膨張する時、異物を半導体基板から切り離すこ
とがてきる。また、有機物等は凍らせると収縮し、ヒビ
が入り粉末化する傾向があり、これも異物を半導体基板
から切り離すことになる。さらに、ウエハステージを回
転させた状態で、圧力板をシャーベット化したＨＦ溶液
に上から押し付けるため、異物を半導体基板から物理的
な力によって切り離すことができ、また、異物をシャー
ベット化したＨＦ溶液の中に取り込み、異物の再付着を
防止することができる。As described above, since the HF solution of 0.1 to 1% is frozen at -1 to -150 ° C. to form a sherbet, 1% of the HF solution soaked between the semiconductor substrate and the foreign matter is used.
When the volume expands by 0%, foreign substances can be separated from the semiconductor substrate. In addition, when the organic matter is frozen, it shrinks and tends to crack and become powder, which also separates foreign matter from the semiconductor substrate. Furthermore, since the pressure plate is pressed against the sherbetized HF solution from above while the wafer stage is rotated, the foreign matter can be separated from the semiconductor substrate by physical force, and the foreign matter can be separated from the sherbetized HF solution. It can be taken in and prevent reattachment of foreign matter.
【０００８】これらの相乗効果により半導体基板の異物
除去の向上を図ることができる。そして、導電性の０．
１〜１％のＨＦ溶液使用は、チャージアップによる静電
破壊を防ぎ、また、異物と半導体基板の、界面に染み込
む特性を有するため、有機膜等のフィルムの除去にも効
果を発揮する。The removal of foreign matter from the semiconductor substrate can be improved by the synergistic effect. Then, the conductive 0.
The use of a 1% to 1% HF solution prevents electrostatic breakdown due to charge-up, and has a property of penetrating into an interface between a foreign substance and a semiconductor substrate, so that it is also effective in removing a film such as an organic film.
【０００９】[0009]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照して詳細に説明する。図１は本発明の実施
例を示す半導体素子の異物除去工程断面図である。以
下、図１を用いて本発明の実施例を示す半導体素子の異
物除去方法を詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a sectional view showing a foreign matter removing step of a semiconductor device according to an embodiment of the present invention. Hereinafter, a method for removing foreign matter from a semiconductor device according to an embodiment of the present invention will be described in detail with reference to FIG.
【００１０】（１）まず、図１（Ａ）に示すように、冷
凍機能付きウエハステージ２上に、半導体基板１を真空
チャックで固定する。 （２）次に、図１（Ｂ）に示すように、ＨＦ溶液ノズル
３から、０．１〜１％ＨＦ溶液４を、ウエハステージ２
を１００〜１０００ｒｐｍで回転させながら半導体基板
１に、１０〜１００ｍｌ／分、０．５〜２分流し、厚さ
１〜２ｍｍのシャーベット状に凍らせる。この時、ウエ
ハステージ温度を常温から−１〜−１５０℃に降温させ
る。(1) First, as shown in FIG. 1A, a semiconductor substrate 1 is fixed on a wafer stage 2 with a freezing function by a vacuum chuck. (2) Next, as shown in FIG. 1B, a 0.1 to 1% HF solution 4 is
Is flowed through the semiconductor substrate 1 at a rate of 10 to 100 ml / min for 0.5 to 2 minutes while rotating at 100 to 1000 rpm, and is frozen in a sherbet shape having a thickness of 1 to 2 mm. At this time, the temperature of the wafer stage is lowered from room temperature to -1 to -150C.
【００１１】（３）次に、図１（Ｃ）は、凍結し、シャ
ーベット化したＨＦ溶液６が半導体基板１上にある様子
を示している。この処理によって、ＨＦ溶液４が異物と
半導体基板１の間に染み込み、ＨＦ溶液４の凍結によっ
て体積が約１０％膨張し、異物が半導体基板１から少し
浮き上がる。 （４）次に、図１（Ｄ）に示すように、ウエハステージ
２を１００〜１０００ｒｐｍで回転させた状態で、圧力
板７（邪魔板）を、少しずつ上の方からシャーベット化
したＨＦ溶液６に押し付け、半導体基板１から０．１〜
１ｍｍの距離になった時点で、圧力板７を押し付けるの
を解除する。(3) Next, FIG. 1C shows a state in which the frozen and sherbetized HF solution 6 is present on the semiconductor substrate 1. By this process, the HF solution 4 soaks between the foreign matter and the semiconductor substrate 1, and the volume of the HF solution 4 expands by about 10% due to freezing, and the foreign matter slightly floats from the semiconductor substrate 1. (4) Next, as shown in FIG. 1 (D), with the wafer stage 2 being rotated at 100 to 1000 rpm, the HF solution in which the pressure plate 7 (baffle plate) is gradually sherbetized from the upper side. 6, from the semiconductor substrate 1 to 0.1 to
When the distance becomes 1 mm, the pressing of the pressure plate 7 is released.
【００１２】圧力板７は、ＨＦ溶液に浸されない材質、
ポリプロピレンやフッ素樹脂が適当である。この処理に
よって、異物に物理的な力が加わり、異物の除去が可能
となる。圧力板７の断面構造は色々考えられるが、シャ
ーベット化したＨＦ溶液６の圧力によって、異物が除去
され、シャーベット化したＨＦ溶液６の中に異物が取り
込まれる形状が望ましい。The pressure plate 7 is made of a material that is not immersed in an HF solution,
Polypropylene or fluorocarbon resin is suitable. By this processing, a physical force is applied to the foreign matter, and the foreign matter can be removed. Although various cross-sectional structures of the pressure plate 7 are conceivable, it is desirable that the pressure of the sherbetized HF solution 6 removes foreign matter and takes in the foreign matter into the sherbetized HF solution 6.
【００１３】（５）次に、図１（Ｅ）に示すように、半
導体基板１を常温まで昇温させ、純水ノズル９から純水
８を流して、シャーベット化したＨＦ溶液６を解かしな
がら除去する。この時、ウエハステージ２は５００〜３
０００ｒｐｍで回転している。水洗が終了したら、ウエ
ハステージ２を１０００〜５０００ｒｐｍで回転し、半
導体基板１をスピン乾燥させて異物除去のフローは完了
する。(5) Next, as shown in FIG. 1 (E), the semiconductor substrate 1 is heated to room temperature, pure water 8 is flowed from a pure water nozzle 9 to dissolve the sherbetized HF solution 6, and Remove. At this time, the wafer stage 2
It is rotating at 000 rpm. When the washing is completed, the wafer stage 2 is rotated at 1000 to 5000 rpm, and the semiconductor substrate 1 is spin-dried to complete the foreign matter removal flow.
【００１４】図２は本発明の実施例を示す半導体素子の
異物除去工程で用いる圧力板の具体例を示す断面図であ
る。上記した圧力板の断面構造は色々考えられるが、シ
ャーベット化したＨＦ溶液の圧力によって、異物が除去
され、シャーベット化したＨＦ溶液の中に異物が取り込
まれる形状が望ましい。FIG. 2 is a sectional view showing a specific example of a pressure plate used in a foreign matter removing step of a semiconductor device according to an embodiment of the present invention. Although there are various possible cross-sectional structures of the pressure plate described above, it is preferable that the pressure plate of the sherbetized HF solution removes foreign matter and incorporates the foreign matter into the sherbetized HF solution.
【００１５】図２に示すように、この実施例では、圧力
板１２はその先端部にテーパ１２ａを形成しており、半
導体基板１０上に形成された、凍結されシャーベット化
したＨＦ溶液１１に圧力板１２を上からゆっくり押さえ
るようにしている。なお、１３は圧力板を押さえる方向
である。上記したように、本発明の実施例によれば、
０．１〜１％のＨＦ溶液を−１〜−１５０℃に凍らせて
シャーベット化させるため、半導体基板と異物の間に染
み込んだＨＦ溶液が１０％体積膨張する時、異物を半導
体基板から切り離すことができる。As shown in FIG. 2, in this embodiment, the pressure plate 12 has a tapered portion 12a at the tip thereof, and the pressure plate 12 is applied to the frozen and sherbetized HF solution 11 formed on the semiconductor substrate 10. The plate 12 is pressed slowly from above. Reference numeral 13 denotes a direction for pressing the pressure plate. As described above, according to an embodiment of the present invention,
Since the HF solution of 0.1 to 1% is frozen at -1 to -150 ° C. to form a sherbet, the foreign matter is separated from the semiconductor substrate when the HF solution soaked between the semiconductor substrate and the foreign matter expands by 10% in volume. be able to.
【００１６】また、有機物等は凍らせると収縮し、ヒビ
が入り粉末化する傾向があり、これにより異物を半導体
基板から切り離すこともできる。さらに、ウエハステー
ジを回転させた状態で、シャーベット化したＨＦ溶液に
圧力板を上から押し付けるため、異物を半導体基板から
物理的な力によって切り離すことができる。Further, the organic matter and the like tend to shrink when frozen, crack and enter into powder, whereby foreign matter can be separated from the semiconductor substrate. Further, since the pressure plate is pressed against the sherbetized HF solution from above while the wafer stage is rotated, the foreign matter can be separated from the semiconductor substrate by physical force.
【００１７】また、異物をシャーベット化したＨＦ溶液
の中に取り込み、異物の再付着を防止する効果も得られ
る。これらの相乗効果により半導体基板の異物除去の向
上が期待できる。導電性の０．１〜１％のＨＦ溶液使用
は、チャージアップによる静電破壊を防ぎ、また、異物
と半導体基板の、界面に染み込む特性を有するため、有
機膜等のフィルムの除去にも効果を発揮する。体積膨張
及び、圧力板による異物除去は、この溶液が、異物と半
導体の界面に染み込む特性を生かしているため、高圧力
及び、超音波は不要であり、構造物ダメージ、半導体基
板の擦り傷、半導体基板中央の異物集中等の従来の問題
点を解決することができる。In addition, an effect is obtained that foreign substances are taken into a sherbetized HF solution to prevent the foreign substances from re-adhering. Due to these synergistic effects, improvement in the removal of foreign substances from the semiconductor substrate can be expected. Use of a conductive HF solution of 0.1 to 1% prevents electrostatic breakdown due to charge-up, and has a property of penetrating into an interface between a foreign substance and a semiconductor substrate, and is also effective in removing a film such as an organic film. Demonstrate. The volume expansion and the removal of foreign matter by the pressure plate make use of the property that this solution soaks into the interface between the foreign matter and the semiconductor, so high pressure and ultrasonic waves are unnecessary, and structural damage, abrasion of the semiconductor substrate, Conventional problems such as concentration of foreign matter at the center of the substrate can be solved.
【００１８】基礎実験として、シリコン基板に綿系のガ
ーゼで異物を擦りつけ、０．３％のＨＦ溶液の中に基板
を入れ、液体窒素でシャーベット状に凍らせた後、基板
をシャーベット化したＨＦ溶液に押し付け、半導体基板
を上下数ｃｍ擦り、異物を除去させた後、水洗いし、窒
素ブローで乾燥後、異物数を光学顕微鏡でカウントした
結果を以下に参考として示す。As a basic experiment, a foreign substance was rubbed on a silicon substrate with cotton gauze, the substrate was put in a 0.3% HF solution, frozen in a liquid nitrogen state in a sherbet shape, and then the substrate was formed into a sherbet. After pressing against a HF solution and rubbing the semiconductor substrate up and down several cm to remove foreign matter, washing with water and drying with nitrogen blow, the result of counting the number of foreign matter with an optical microscope is shown below for reference.
【００１９】 除去前 １５００００ （個／ｃｍ2 ） 除去後 ７５００ （個／ｃｍ2 ） 除去率 ９５ （％） 本発明は、上記した実施例以外に、以下のような利用形
態を有する。ＨＦ溶液の代わりに、ＨＦ＋過酸化水素水
溶液及びアンモニア＋過酸化水素水溶液等を使用すれ
ば、異物除去装置というより洗浄装置の意味合いが強く
なる。溶液を回転塗布し、冷凍機能を逆に利用して昇温
させ、洗浄液を活性化し、異物の除去及び分解させた
後、降温によりシャーベット化し、圧力板により、残留
した異物を物理的に除去すれば洗浄装置として、十分使
用可能である。溶液は使い捨てのため、装置の材質さえ
注意すれば、金属汚染等も防止でき、再汚染の心配がな
い。Before removal 150,000 (pieces / cm 2 ) After removal 7500 (pieces / cm 2 ) Removal rate 95 (%) In addition to the above-described embodiment, the present invention has the following usage modes. If an HF + hydrogen peroxide aqueous solution, ammonia + hydrogen peroxide aqueous solution, or the like is used instead of the HF solution, the meaning of the cleaning device becomes stronger than the foreign matter removing device. The solution is spin-coated, the temperature is raised by using the refrigerating function in reverse, the cleaning liquid is activated, the foreign matter is removed and decomposed, and then the temperature is lowered to form a sherbet, and the pressure plate is used to physically remove the remaining foreign matter. It can be used as a cleaning device. Since the solution is disposable, metal contamination and the like can be prevented by paying attention to the material of the device, and there is no fear of recontamination.
【００２０】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、これらを本発明の範囲から排除するものではな
い。It should be noted that the present invention is not limited to the above embodiment, but various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
【００２１】[0021]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、以下のような効果を奏することができる。上記
したように、０．１〜１％のＨＦ溶液を−１〜−１５０
℃に凍らせて、シャーベット化させるため、半導体基板
と異物の間に染み込んだＨＦ溶液が１０％体積膨張する
時、異物を半導体基板から切り離すことができる。As described above, according to the present invention, the following effects can be obtained. As described above, 0.1 to 1% HF solution is added to -1 to -150.
Since the HF solution permeated between the semiconductor substrate and the foreign substance expands by 10% by volume because the HF solution is frozen at a temperature of 0 ° C. to form a sherbet, the foreign substance can be separated from the semiconductor substrate.
【００２２】また、有機物等は凍らせると収縮し、ヒビ
が入り粉末化する傾向があり、これも異物を半導体基板
から切り離すことになる。さらに、ウエハステージを回
転させた状態で、圧力板をシャーベット化したＨＦ溶液
に上から押し付けるため、異物を半導体基板から物理的
な力によって切り離すことができ、また、異物をシャー
ベット化したＨＦ溶液の中に取り込み、異物の再付着を
防止することができる。Further, when the organic matter or the like is frozen, it shrinks and tends to crack and become powder, which also separates foreign matter from the semiconductor substrate. Furthermore, since the pressure plate is pressed against the sherbetized HF solution from above while the wafer stage is rotated, the foreign matter can be separated from the semiconductor substrate by physical force, and the foreign matter can be separated from the sherbetized HF solution. It can be taken in and prevent reattachment of foreign matter.
【００２３】これらの相乗効果により、半導体基板の異
物除去の向上を図ることができる。そして、導電性の
０．１〜１％のＨＦ溶液使用は、チャージアップによる
静電破壊を防ぎ、また、異物と半導体基板の界面に染み
込む特性を有するため、有機膜等のフィルムの除去にも
効果を発揮する。このような、体積膨張及び圧力板によ
る異物除去は、この溶液が、異物と半導体の界面に染み
込む特性を生かしているため、高圧力及び超音波は不要
であり、構造物ダメージ、半導体基板の擦り傷、半導体
基板中央の異物集中等の従来の問題点を解決することが
できる。By these synergistic effects, it is possible to improve the removal of foreign matter from the semiconductor substrate. The use of a conductive HF solution of 0.1 to 1% prevents electrostatic breakdown due to charge-up, and has a property of penetrating into an interface between a foreign substance and a semiconductor substrate. It is effective. Such volume expansion and foreign matter removal by the pressure plate make use of the property that this solution permeates the interface between the foreign matter and the semiconductor, so that high pressure and ultrasonic waves are not required, and structural damage and abrasion of the semiconductor substrate are eliminated. The conventional problems such as the concentration of foreign matter at the center of the semiconductor substrate can be solved.
【図１】本発明の実施例を示す半導体素子の異物除去工
程断面図である。FIG. 1 is a cross-sectional view illustrating a process of removing foreign matter from a semiconductor device according to an embodiment of the present invention.
【図２】本発明の実施例を示す半導体素子の異物除去工
程で用いる圧力板の具体例を示す断面図である。FIG. 2 is a sectional view showing a specific example of a pressure plate used in a foreign matter removing step of a semiconductor device according to an embodiment of the present invention.
１，１０ 半導体基板 ２ ウエハステージ（冷凍機能付き） ３ ＨＦ溶液ノズル ４ ０．１〜１％ＨＦ溶液 ６，１１ シャーベット化したＨＦ溶液 ７，１２ 圧力板（邪魔板） ８ 純水 ９ 純水ノズル １２ａ テーパ １３ 圧力板を押さえる方向 Reference Signs List 1,10 Semiconductor substrate 2 Wafer stage (with freezing function) 3 HF solution nozzle 4 0.1-1% HF solution 6,11 Sherbetized HF solution 7,12 Pressure plate (baffle plate) 8 Pure water 9 Pure water nozzle 12a Taper 13 Direction to hold down pressure plate
Claims (2)
体基板を固定する工程と、（ｂ）該半導体基板上に０．
１〜１％ＨＦ溶液を回転塗布する工程と、（ｃ）前記ウ
エハステージを−１〜−１５０℃に降温させ、前記ＨＦ
溶液をシャーベット化する工程と、（ｄ）該シャーベッ
ト化されたＨＦ溶液に圧力板を押し付け、前記ウエハス
テージを回転させる工程と、（ｅ）前記半導体基板を常
温まで昇温させ、前記シャーベット化されたＨＦ溶液を
解かし、回転水洗する工程とを順に施すことを特徴とす
る半導体素子の異物除去方法。(A) fixing a semiconductor substrate to a wafer stage with a freezing function;
A step of spin-coating a 1 to 1% HF solution, and (c) lowering the temperature of the wafer stage to -1 to -150 ° C,
(D) pressing a pressure plate against the sherbetized HF solution to rotate the wafer stage; and (e) elevating the temperature of the semiconductor substrate to room temperature to form the sherbet. A step of dissolving the HF solution and subjecting it to rotary water washing.
（ｂ）該ウエハステージ上に半導体基板を固定する手段
と、（ｃ）前記半導体基板上に０．１〜１％ＨＦ溶液を
回転塗布する手段と、（ｄ）前記ウエハステージを−１
〜−１５０℃に降温させ、前記ＨＦ溶液をシャーベット
化する手段と、（ｅ）該シャーベット化されたＨＦ溶液
に押し付けられる圧力板と、（ｆ）前記シャーベット化
されたＨＦ溶液に前記圧力板を押し付け、前記ウエハス
テージを回転させる手段と、（ｇ）前記半導体基板を常
温まで昇温させ、前記シャーベット化されたＨＦ溶液を
解かし、回転水洗する手段とを具備することを特徴とす
る半導体素子の異物除去装置。2. A wafer stage with a freezing function,
(B) means for fixing a semiconductor substrate on the wafer stage; (c) means for spin-coating a 0.1-1% HF solution on the semiconductor substrate;
Means for lowering the temperature to -150 ° C. to sherbet the HF solution; (e) a pressure plate pressed against the sherbetized HF solution; A means for pressing and rotating the wafer stage; and (g) means for raising the temperature of the semiconductor substrate to room temperature, dissolving the sherbetized HF solution, and rotating and washing with water. Foreign matter removal device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17315196A JP3350627B2 (en) | 1996-07-03 | 1996-07-03 | Method and apparatus for removing foreign matter from semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17315196A JP3350627B2 (en) | 1996-07-03 | 1996-07-03 | Method and apparatus for removing foreign matter from semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1022245A true JPH1022245A (en) | 1998-01-23 |
| JP3350627B2 JP3350627B2 (en) | 2002-11-25 |
Family
ID=15955056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17315196A Expired - Fee Related JP3350627B2 (en) | 1996-07-03 | 1996-07-03 | Method and apparatus for removing foreign matter from semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3350627B2 (en) |
Cited By (6)
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|---|---|---|---|---|
| WO2002029860A2 (en) * | 2000-10-05 | 2002-04-11 | Lam Research Corporation | Wafer cleaning module and method for cleaning the surface of a substrate |
| US7402467B1 (en) * | 1999-03-26 | 2008-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
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| JP2009522783A (en) * | 2005-12-30 | 2009-06-11 | ラム リサーチ コーポレーション | Method and apparatus for cleaning a semiconductor substrate |
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-
1996
- 1996-07-03 JP JP17315196A patent/JP3350627B2/en not_active Expired - Fee Related
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| WO2002029860A3 (en) * | 2000-10-05 | 2003-03-13 | Lam Res Corp | Wafer cleaning module and method for cleaning the surface of a substrate |
| WO2002029860A2 (en) * | 2000-10-05 | 2002-04-11 | Lam Research Corporation | Wafer cleaning module and method for cleaning the surface of a substrate |
| JP2009522783A (en) * | 2005-12-30 | 2009-06-11 | ラム リサーチ コーポレーション | Method and apparatus for cleaning a semiconductor substrate |
| JP2009049126A (en) * | 2007-08-17 | 2009-03-05 | Dainippon Screen Mfg Co Ltd | Substrate cleaning method, and substrate cleaning device |
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| Publication number | Publication date |
|---|---|
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