JPH10163180A - Equipment for manufacturing electronic device and manufacture of electronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing equipment and a manufacturing method of an electronic device wherein particles sticking to a wafer can be reduced in the cource of treatment like plasma etching. SOLUTION: Plasma 5 is generated in a chamber 1, and dry etching of a semiconductor substrate 7 mounted on a lower electrode 6 in the chamber 1 is performed. Since average surface roughness Ra of the lower surface of a quartz top plate 10 arranged above the lower electrode 6 is finished in a range of 0.2-5μm, adherence of the quartz top plate 10 and deposit 21 generated by dry etching is increased, and the number of particles floating in the chamber 1 is reduced. Sticking strengthening function of the deposit 21 can be maintained also after the quartz ceiling plate 10 is cleaned. Since treatment is performed in an extremely clean atmosphere, the number of foreign matters sticking to the semiconductor substrate 7 can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for an electronic device and a method for manufacturing an electronic device in which processing such as dry etching, sputtering, and CVD is performed in a chamber.

[0002]

2. Description of the Related Art In recent years, with the increase in density and integration of electronic devices such as semiconductor devices, high processing accuracy has been increasingly required. Therefore, an LSI formed by integrating a large number of transistors
Various processes such as dry etching, sputtering, and CVD in a manufacturing process of a liquid crystal device formed by integrating many elements such as TFTs are performed in an atmosphere necessary for performing the process and in a clean state with almost no particles. In general, the work is performed by installing a workpiece in a chamber to secure an atmosphere.

Here, a conventional apparatus and method for manufacturing an electronic device will be described by taking a conventional dry etching process as an example.

FIG. 10 shows a plasma apparatus disclosed in Japanese Patent Application Laid-Open No. 6-196421, which utilizes electron cyclotron resonance (ECR).

[0005] As shown in FIG.
A bell jar 104 having a frosted and roughened surface is disposed in the plasma generation chamber 101 having the plasma extraction window 1a and the plasma extraction window 101b. Further, the plasma generation chamber 10
In the sample chamber 103 in which the mounting table 108 for mounting the sample S is disposed, the gas introducing pipe 109 and the exhaust pipe 111
Is connected. A deposition preventing plate 105 is provided over one end of the sample chamber 103, the mounting table 108, and one end of the exhaust pipe 111. The upper heating walls 106a and 106b and the lower heating walls 107a and 107b are provided on the side walls of the plasma generation chamber 101, the side walls and the lower wall of the sample chamber 103, and the outer surfaces of the ends of the exhaust pipe 111.
Are arranged respectively. Further, the waveguide 10 connected to the periphery of the upper heating wall 106 and the plasma generation chamber 101.
The excitation coil 112 is provided over one end of the second coil 2. Then, the sample S is subjected to plasma processing while circulating a warm fluid through the upper heating walls 106a and 106b and the lower heating walls 107a and 107b to heat the bell jar 104 and the deposition prevention plate 105. Then, the bell jar 104 and the deposition-preventing plate 10
The inner surface of No. 5 is roughened.

That is, only the inner surface of the deposition-preventing plate 105 has been roughened up to that point. However, in view of the fact that the adhered product (deposit) drops from the bell jar 104, the inner surface of the bell jar 105 is also roughened. The surface is roughened, and the action of attaching a product generated by plasma processing or the like to the roughened inner surface as a deposit is strengthened. Thereby, the action of adhering the product to the inner surface of the bell jar 105 or the like is promoted, and the fall of the adhering product is suppressed, so that the number of particles adhering to the sample S is reduced. .

[0007]

However, the above-mentioned conventional plasma apparatus does not take into account any function after cleaning required after a certain use time, and thus has the following problems. Was.

For example, the average surface roughness Ra of the inner surface is 10 μm.
In order to remove deposits containing silicon from a quartz bell jar or the like having a diameter of m, it is necessary to perform ultrasonic cleaning by immersion in a hydrofluoric acid aqueous solution having a concentration of about 1% for about 1 hour. However, when ultrasonic cleaning is performed by immersing a quartz bell jar or the like in a hydrofluoric acid aqueous solution for such a long time, the inner surface itself of the quartz bell jar is simultaneously etched, and the unevenness of the roughened inner surface is blunted. The surface is smoothed. Therefore, the function of strengthening the adhesion of products on the inner surface such as a bell jar is reduced. Therefore, even if the inner surface of the bell jar is cleaned so as to maintain the function of enhancing the adhesion of products on the inner surface of the bell jar, the quartz bell jar must be roughened every time the bell jar is washed.
As a result, due to troublesome work and consumption of quartz bell jars,
It will not be practical.

In order for the present inventors to stably maintain the function of increasing the adhesion of a deposited material such as a quartz member after cleaning, what kind of unevenness must be formed on the inner surface? As a result, it was found that the average surface roughness Ra of the inner surface was more important than the maximum surface roughness Rmax of the inner surface. In other words, the maximum surface roughness Rmax is the difference between the peak value of the maximum height and the valley value of the minimum height in a relatively wide range, but the average surface roughness Ra is the average size of the irregularities in the minute range. As well shown, the ease with which the deposits are removed depends on how much the deposits have penetrated into the microscopic recesses. On the other hand, in the above-mentioned publications and other prior arts, no consideration is given to how the average surface roughness Ra should be maintained in order to maintain the function of enhancing the adhesion of the product after cleaning. Even after the required cleaning is performed at regular intervals of use, the effect may not be stably maintained.

[0010] The present invention has been made in view of the above points, and an object of the present invention is to provide a device for manufacturing an electronic device and a method for manufacturing an electronic device, in which a product generated by a reaction is exposed in a chamber. Improving the yield in the electronic device manufacturing process and improving the reliability of the manufactured electronic device by taking measures to stably maintain the function of enhancing adhesion to the surface of the member even after cleaning. Is to make it happen.

[0011]

In order to achieve the above object, according to the present invention, there are provided means relating to the first electronic device manufacturing apparatus described in claims 1 to 6 and claims 7 to 1.
The means relating to the second electronic device manufacturing apparatus described in claim 3, the means relating to the third electronic device manufacturing apparatus described in claims 14 to 15, and the claims 16 to
17 regarding the method of manufacturing an electronic device.

According to a first aspect of the present invention, there is provided an electronic device manufacturing apparatus for processing a workpiece to manufacture an electronic device. A chamber configured to be able to maintain an internal atmosphere in an atmosphere for processing the workpiece, a workpiece installation unit disposed in the chamber, for installing the workpiece, An average surface roughness R formed on the inner surface of the ceiling of the chamber and having a function of strengthening the adhesion of products generated during the processing of the workpiece and maintaining the function even after the ceiling is cleaned.
and a microscopic uneven portion finished in a.

As a result, the adhesion between the product adhering to the fine irregularities on the ceiling and the minute irregularities is increased, so that a part of the product layer can be prevented from falling off due to a temperature change or the like. In addition, the number of particles floating in the chamber can be reduced. In addition, since the surface area of the ceiling portion is enlarged by the minute uneven portion, a large amount of products can be attached, and the number of particles floating in the chamber can be further reduced. Furthermore, attention is paid to the fact that the average surface roughness Ra of the ceiling has a deep correlation with the ease with which the attached product is dropped and the ease with which the attached product is removed during cleaning of the ceiling. However, since the average surface roughness Ra of the minute uneven portion is configured to be in an appropriate range, the number of particles adhering to the workpiece during long-term use can be reduced.

According to a second aspect of the present invention, in the first aspect, when the ceiling is made of quartz glass, the average surface roughness Ra of the fine unevenness is 0.2 to 5 μm. It is preferable that

The results of experiments on quartz glass members confirm that the number of particles adhering to a workpiece during processing of the workpiece can be reduced even if cleaning is performed many times.

According to a third aspect of the present invention, in the first or second aspect, the electromagnetic wave is disposed outside the chamber and close to the ceiling, and generates an inductively coupled plasma in the chamber. May be further provided.

As a result, when the workpiece is processed, an electric field is generated between the ceiling and the plasma inside the chamber, and the plasma ions collide with the ceiling. There are a portion that easily falls due to the collision of ions and a portion that bites into a minute concave portion due to the collision of ions and is difficult to remove during cleaning. At this time, when the average surface roughness Ra of the fine unevenness is in the appropriate range, the function of strengthening the adhesion of the product by the fine unevenness can be obtained, and the ceiling can be formed in the chamber without excessive cleaning. The function of enhancing the adhesion of objects is stably maintained.

According to a fourth aspect, in the first, second or third aspect, the workpiece includes at least one of polycrystalline silicon, amorphous silicon, and single crystal silicon. In the case where the electronic device manufacturing apparatus is an etching apparatus for etching the processed part of the workpiece, the processing chamber includes chlorine or bromine. It is preferable to further include a gas supply device for introducing gas.

According to a fifth aspect of the present invention, in the first, second or third aspect, the workpiece has a processing portion made of silicon nitride, and the apparatus for manufacturing an electronic device has the processing device. In the case of an etching apparatus for etching a portion to be processed of a workpiece, it is preferable to further include a gas supply device for introducing a gas containing fluorine into the chamber.

According to a sixth aspect of the present invention, in the first, second or third aspect, the workpiece has a processing portion made of silicon oxide, and the apparatus for manufacturing an electronic device has In the case of an etching apparatus for etching a portion to be processed of a workpiece, it is preferable to further include a gas supply device for introducing a gas containing fluorine into the chamber.

According to the fourth, fifth or sixth aspect, the etching of the workpiece can be performed smoothly, and the product generated by the etching of the workpiece includes silicon atoms. When the above-mentioned ceiling portion to which the product containing the above is adhered is cleaned under excessive conditions, there is a great possibility that the fine unevenness of the ceiling portion is dulled by a chemical for removing the product. However, when the average surface roughness Ra of the fine irregularities on the ceiling is within an appropriate range,
Since the adhered products are easily removed without performing excessive cleaning, the function of strengthening the adherence of the products on the ceiling during processing is stably maintained.

According to a second aspect of the present invention, there is provided an electronic device manufacturing apparatus for processing a workpiece to manufacture an electronic device. A chamber configured to be able to maintain an internal atmosphere in an atmosphere for processing the workpiece, a workpiece installation unit disposed in the chamber, for installing the workpiece, An internal member made of quartz glass is provided in the chamber, and formed on a surface of the internal member exposed in the chamber,
It has a function of strengthening the adhesion of products generated during the processing of the workpiece, and has fine irregularities finished to an average surface roughness Ra capable of maintaining the function even after cleaning.

As a result, the adhesion between the product adhering to the minute uneven portion of the internal member and the minute uneven portion is increased, and it is possible to suppress a part of the product layer from falling off due to a temperature change or the like. In addition, the number of particles floating in the chamber can be reduced. In addition, since the surface area of the internal member is increased by the minute irregularities, a large amount of products can be attached, and the number of particles floating in the chamber can be further reduced. Moreover, it is noted that the average surface roughness Ra of the internal member has a deep correlation with the easiness of dropping of the attached product and the easiness of removing the attached product at the time of cleaning the internal member. And the average surface roughness Ra of the minute irregularities
Is set in an appropriate range, so that the number of particles adhering to the workpiece during long-term use can be reduced.

According to an eighth aspect of the present invention, in the apparatus for manufacturing an electronic device according to the seventh aspect, it is preferable that an average surface roughness of the minute uneven portion is 0.2 to 5 μm.

Thus, the results of experiments on quartz glass members have confirmed that the number of particles adhering to a workpiece during processing of the workpiece can be reduced even if cleaning is performed many times.

According to a ninth aspect, in the seventh or eighth aspect, the internal member is disposed on the workpiece installation portion so as to surround a periphery of the workpiece.
It may be a quartz ring for controlling the flow of gas in the chamber.

According to a tenth aspect, in the seventh or eighth aspect, a gas inlet for introducing a gas for processing the workpiece into the chamber is provided in a ceiling portion of the chamber. Is formed, the internal member is disposed close to the ceiling of the chamber, and a quartz dispersion plate for dispersing the flow of gas introduced into the chamber from the inlet through the chamber. can do.

According to the ninth or tenth aspect, an electric field is generated between the internal member and the plasma inside the chamber when the workpiece is processed, and the plasma ions collide with the internal member. The object has a portion that easily falls due to the collision of ions and a portion that bites into a minute concave portion due to the collision of ions and is difficult to remove during cleaning. At this time, when the average surface roughness Ra of the minute irregularities is in the proper range, the function of strengthening the adhesion of the product by the minute irregularities is obtained, and the internal member is formed in the chamber without performing excessive cleaning. The function of enhancing the adhesion of objects is stably maintained.

According to an eleventh aspect, in the seventh, eighth, ninth or tenth aspect, the workpiece is at least one of polycrystalline silicon, amorphous silicon, and single crystal silicon. When the electronic device manufacturing apparatus is an etching apparatus for etching the processed portion of the workpiece, chlorine or bromine is contained in the chamber. It is preferable to further include a gas supply device for introducing a gas containing.

According to a twelfth aspect, in the seventh, eighth, ninth or tenth aspect, the object to be processed has a portion to be processed made of silicon nitride, and the apparatus for manufacturing an electronic device is provided. In the case of an etching apparatus for etching a portion to be processed of the workpiece, the chamber preferably further includes a gas supply device for introducing a gas containing fluorine into the chamber.

According to a thirteenth aspect, in the seventh, eighth, ninth or tenth aspect, the workpiece has a portion to be processed made of silicon oxide. In the case of an etching apparatus for etching a portion to be processed of the workpiece, the chamber preferably further includes a gas supply device for introducing a gas containing fluorine into the chamber.

According to the eleventh, twelfth and thirteenth aspects, the etching of the workpiece can be performed smoothly, and the product generated by the etching of the workpiece contains silicon atoms. When the above-mentioned internal member to which the product containing is adhered is cleaned under excessive conditions, there is a great possibility that the fine unevenness of the internal member is dulled by a chemical for removing the product. But,
When the average surface roughness Ra of the minute uneven portion of the internal member is within an appropriate range, the adhered products can be easily removed without performing excessive cleaning. The function of strengthening the adhesion of the particles is stably maintained.

According to a third aspect of the present invention, there is provided an electronic device manufacturing apparatus for processing a workpiece to manufacture an electronic device. A chamber configured to be able to maintain an internal atmosphere in an atmosphere for processing the workpiece, a workpiece installation unit disposed in the chamber, for installing the workpiece, Cooling means for cooling at least a part of the chamber.

According to a fifteenth aspect, in the fourteenth aspect, the cooling means can cool a top plate of the chamber.

According to the fourteenth or fifteenth aspect, volatilization of the product hardly occurs on a part of the inner surface of the chamber cooled by the cooling means, and the adhesion of the product is strengthened.
The number of particles floating in the chamber can be reduced.

According to the method of manufacturing an electronic device of the present invention, a work is set in a chamber and a process for manufacturing an electronic device is performed on the work. A method of cooling at least a part of the chamber during the treatment to promote deposition of products generated during the treatment on the inner surface of the chamber.

According to this method, the volatilization of the product is less likely to occur on a part of the inner surface of the cooled chamber, the adhesion of the product is strengthened, and the number of particles floating in the chamber can be reduced.

As described in claim 17, in claim 16, it is preferable that the temperature of the at least one part is kept constant.

According to this method, the adhered product is prevented from dropping due to a temperature change in a part of the cooled chamber, so that the number of particles floating in the chamber is further reduced. Become.

[0040]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An electronic device manufacturing apparatus according to an embodiment of the present invention will be described below with reference to the drawings.

(First Embodiment) FIG. 1 is a sectional view schematically showing a structure of a dry etching apparatus using inductively coupled plasma according to a first embodiment.

In FIG. 1, 1 is a chamber, 6 is a lower electrode installed in the lower part of the chamber 1, 3 is a high-frequency coil, 5 is a plasma region formed in the chamber 1, 7
Denotes a semiconductor substrate which is a workpiece to be set on the lower electrode 6, 4 and 8 denote blocking capacitors, 11 denotes
Reference numerals a and 11b denote inlets for supplying gas into the chamber 1, reference numeral 12 denotes a discharge outlet for discharging gas from the chamber 1, and reference numeral 10 denotes a quartz top plate. When performing dry etching, a high-frequency output RF (13.56 MHz) is applied to the lower electrode 6 via the blocking capacitor 8 to align the directions of the reactive species in the plasma region 5. A high frequency output RF is applied to the coil 3 installed on the quartz top plate 10 via the blocking capacitor 4.
(13.56 MHz), a high-density plasma region 5 is generated, and the semiconductor substrate 7 placed on the lower electrode 6 is etched. In FIG. 1, reference numeral 21 denotes a product generated during etching,
It is attached to the lower surface of the quartz top plate 10 (hereinafter, referred to as a deposit).

When dry etching is performed by the plasma apparatus of this embodiment, the following types of gases are generally used according to the material of the workpiece.

When etching the polysilicon film, the amorphous silicon film, and the silicon substrate, a gas containing chlorine or bromine is used. When etching the silicon nitride film, a gas containing fluorine is used. When etching the silicon oxide film, a gas containing fluorine, for example, O2 gas, CF4 gas, C2 F6 gas, C4 F
A mixed gas of 8 gas and CHF3 gas is used.

The feature of this embodiment is that the quartz top plate 1
The point 0 is that the surface is not smooth and fine irregularities are intentionally generated. In other words, the surface roughness is increased. That is, the surface of the generally used quartz top plate is very smooth, that is, the surface roughness is extremely small, whereas in the present embodiment, the surface exposed in the chamber of the quartz top plate 10 is Has been subjected to a roughening process. Examples of processing for forming such a rough surface include sand blasting and grinding using coarse abrasive grains. And, by such a surface treatment, the quartz top plate 10
Are formed on the lower surface of the quartz plate 10 to provide a function of strengthening the adhesion of the deposit 21 to the quartz top plate 10. Further, such a function is stably maintained even after the quartz top plate 10 is cleaned. Hereinafter, results of experiments performed on these functions will be described.

[Experiment on Deposit Adhesion Enhancing Function] FIGS. 2 (a) and 2 (b) show one quartz top plate used in the present embodiment and a commonly used quartz having a smooth surface. It is the data which shows the example which measured the surface roughness about the top plate using the stylus type surface roughness measuring device. FIG.
As shown in FIG. 2B, the average surface roughness Ra of the quartz top plate which is widely used is as small as about 0.04 μm, whereas as shown in FIG. The average surface roughness Ra of the quartz top plate, which is one example, is extremely large at 1.14 μm because of sandblasting. However, in the present embodiment, as described below, samples having various surface roughnesses in the range of Ra 0.2 to 5 μm are prepared, and when these samples are used, the number of particles adhering to the wafer, A test is being conducted on the removal of deposits on the quartz top plate.

FIG. 3 shows the order of slice processing in one lot in the dry etching apparatus according to the first embodiment and the dry etching apparatus in which a quartz top plate having a smooth surface is mounted, and the foreign matter in one slice which becomes a pattern defect. It is the graph which plotted the relationship with the number. However, in the following description, one lot in this embodiment corresponds to two wafers.
This means that five slices are taken, and after the processing of the 25th slice is completed, the process is suspended for a while and the slice of the next lot is continuously processed. The data shown in FIG. 3 shows the number of foreign substances in one lot (25 slices) after processing about 500 slices of wafers after cleaning the chamber. When using a dry etching device with a quartz top plate with a smooth surface,
As shown in the figure, at the beginning of processing one lot,
Since particles floating in the chamber are discharged during the pause, the number of foreign matters on the first wafer of one lot is small. Thereafter, as the continuous processing is performed, the number of foreign substances increases, and more than 100 foreign substances are generated in the 25th slice. In other words, it can be seen that the number of foreign particles attached to the wafer is large and the number of foreign particles depends on the number of processed wafers. On the other hand, when the dry etching apparatus according to the present embodiment is used, the number of foreign substances adhering to the wafer in one lot has no dependency on the number of processed wafers. Also, in the last slice of one lot after the processing of 500 slices is completed, the number of foreign substances can be suppressed to an extremely small value of 0 to 3 pieces.

FIG. 4 shows the number of processed wafers and the number of wafers processed when the dry etching apparatus according to the present embodiment is used and when the dry etching apparatus using a quartz top plate having a smooth surface is used. 0.3μ
9 is a graph showing a relationship with the number of particles of m or more. However, the number of particles shown in the figure is data measured for the first slice in one lot composed of 25 slices. When a dry etching apparatus equipped with a quartz top plate having a smooth surface is used, as shown in a line graph SA1 in FIG. Need cleaning. On the other hand, when the dry etching apparatus according to the present embodiment is used, as shown in the line graph SA2 in FIG. It has become possible to perform a high yield dry etching process. Note that the data shown in the line graph SA2 in the same figure showed a tendency that the surface roughness obtained by performing the experiment in the present embodiment was almost commonly obtained for the quartz top plate in the range of Ra 0.2 to 5 μm. It was found that when the average surface roughness Ra was 1 μm or more, the function of suppressing the detachment of the deposits was great.

Here, the difference described above occurs between the dry etching apparatus using the quartz top plate having a smooth surface and the dry etching apparatus of the present embodiment in the number of foreign substances adhering to the wafer. For the following reasons.

In a dry etching apparatus equipped with a top plate having a smooth surface, a part of the deposited material drops off in a lump on the lower surface of the quartz top plate to form particles and float in the chamber. Large number of foreign substances adhered. In contrast, according to the present embodiment, the chamber 1
Since the surface of the quartz top plate 10 installed in the inside is roughly finished, the adhesion between the surface of the quartz top plate 10 and the deposit 21 can be maintained high. Therefore, the first
In addition, since the resulting product has a high function of adhering to the surface of the quartz top plate 10 as the deposit 21, the chamber 1
The number of particles floating inside can be suppressed. Secondly, since the deposit 21 once formed on the surface of the quartz top plate 10 can be prevented from dropping in a lump, the number of particles floating in the chamber 1 can be further reduced. Therefore, it is possible to realize a cleaner dry etching process.

By increasing the surface roughness of the quartz top plate 10, the surface area of the quartz top plate 10 is increased. As a result, the area to which the product adheres is also increased. It seems that the effect of reducing particles floating on the surface has been produced.

More specifically, in order to enhance the adhesion of the deposit and suppress its fall, the average surface roughness R
a is preferably 0.2 μm or more, and more preferably 1 μm.
Most preferably, it is at least m.

[Experiment on Cleaning] Next, an experiment was conducted to clean a quartz top plate on which deposits were deposited thickly as a result of use in plasma etching. The main cleaning methods used in the experiment were a method of rinsing a quartz top plate with running water and a method of immersing it in an approximately 1% aqueous solution of hydrofluoric acid (aqueous solution made with a volume ratio of hydrofluoric acid of 1 to 100 of water) And applying ultrasonic waves. The former method of rinsing with running water was found to be less effective in removing deposits containing silicon atoms. Then, it is understood that the ultrasonic cleaning in the latter hydrofluoric acid aqueous solution has an effect of cleaning the adhered particles, and that the average surface roughness Ra of the quartz top plate has an upper limit as described below. Was.

(1) Relationship between Average Surface Roughness Ra and Cleaning Time If the average surface roughness Ra of the quartz top plate is too rough, ultrasonic cleaning is performed in an approximately 1% aqueous solution of hydrofluoric acid for a considerably long time. The time required for this cleaning tends to increase as the surface roughness of the quartz top plate increases. For example, for a quartz top plate having an average surface roughness Ra of 10 μm, it was necessary to perform cleaning for one hour or more.

(2) Types of Surface Roughness In general, there are many display methods for displaying surface roughness. The most commonly used method is to display the surface of an object to be measured in a certain cross section. The maximum surface roughness Rmax, which is the difference between the maximum height position (peak) and the minimum height position (Vally) of the irregularity curve obtained when scanning, and the average roughness indicating the average roughness of minute irregularities Ra. If the maximum surface roughness Rmax is large, the surface area increases, so that the effect of increasing the surface area certainly enhances the adhesion enhancement function of the product. However, it seems that the function of suppressing the falling of the adhering product depends rather on the average surface roughness Ra. In particular, it is considered that whether or not the deposit is easily removed during cleaning has no direct relation to the maximum surface height Rmax. That is, the easiness of removal of the deposit during cleaning should depend not on whether the surface area of the minute uneven portion is increased but on whether the deposit is in close contact with the minute uneven portion.

As a result of the experiment on the present embodiment, particularly regarding the cleaning time of the quartz top plate, the maximum surface roughness Rma
It was found that the relationship with the average surface roughness Ra was deeper than x. This is presumably because when the average surface roughness Ra is large, the valley in a small range becomes deep, and the deposits penetrate into the deep valley. Here, in general, even if the maximum surface roughness Rmax is the same, the average surface roughness Ra is not always the same. However, when the average surface roughness Ra is large, the maximum surface roughness Rmax also becomes large. Therefore, indirectly, although there is a relationship between the maximum surface roughness Rmax and the ease with which the deposits can be removed, it is not appropriate to determine the appropriate range of the roughness of the fine unevenness by the maximum surface roughness Rmax. all right.

(3) Relationship between the cleaning conditions and the adhesion enhancement function of the deposited material after cleaning As a result of the experiment, when etching is performed using a quartz top plate that has been cleaned for a long time, minute irregularities on the quartz top plate It was found that the function of strengthening the adhesion of the deposited material was reduced. The reason is as follows. Average surface roughness Ra
When cleaning a quartz member having a large diameter, if the deposited material contains silicon atoms, it is necessary to perform ultrasonic cleaning in an aqueous solution of about 100: 1 water: HF. When the average surface roughness Ra is particularly about 10 μm, it is necessary to clean for about one hour, and this cleaning dulls the irregularities of the quartz member. In such a case, the function of strengthening the adhesion of the deposit and suppressing the falling off of the deposit is weakened. Therefore, those having such an excessively large average surface roughness Ra need to be cleaned and processed again to roughen the surface, which is not practical. Similar results were obtained even when the cleaning time was shortened by increasing the concentration of hydrofluoric acid. Further, the adhering substance that has penetrated deeply may remain without being completely removed, and may fall down during the next use and adhere as particles on the substrate. However, if Ra is 5 μm or less, the attached matter can be removed by ultrasonic cleaning in a hydrofluoric acid aqueous solution within several minutes. If the cleaning is performed within several minutes, the average surface roughness R of the quartz plate
a does not change. In particular, when the average surface roughness Ra is 2 μm or less, a deposit containing silicon atoms can be removed simply by washing with running water without using hydrofluoric acid.

(4) The average surface roughness R for maintaining the function of enhancing the adhesion of the deposit even when the cleaning is repeated.
a. As described above, when cleaning is repeated many times, in order to stably exhibit the function of increasing the adhesion of the deposit,
Most preferably, the average surface roughness Ra of the quartz top plate is 2 μm or less. However, if Ra is 5 μm or less, it may be necessary to re-work the surface of the quartz top plate after performing cleaning many times, but practicality was sufficiently obtained.

[Optimal Surface Roughness of Fine Irregularities Obtained by Synthesizing the Above Experiments] By summing up the above results, the optimum surface roughness of the quartz top plate is larger than the maximum surface roughness Rmax. It depends strongly on the range of the roughness Ra. The average surface roughness Ra of the quartz top plate is 0.2 to 5 μm from two viewpoints, that is, the function of enhancing the adhesion of the deposited material during use and the prevention of deterioration of the function after cleaning.
And the average surface roughness Ra
Is most preferably in the range of 1 to 2 μm.

The difference between the above-described conventional plasma apparatus using ECR type plasma and the dry etching apparatus which is the plasma apparatus of the present embodiment will be described below.

In the plasma apparatus using the inductively coupled plasma used in the present embodiment, the electromagnetic wave generated by the high-frequency power applied to the coil 3
The quartz top plate 10 is positively charged to pass through the inside, and a voltage Vdc exists between the plasma 5 formed in the chamber 1 and the quartz top plate 10, and ions accelerated by the voltage Vdc Collides with the quartz top plate 10. Therefore, if the adhesion between the deposit 21 and the quartz top plate 10 is small, the deposition 21 is likely to peel off due to the collision of the ions. For this reason, when a commonly used quartz top plate having a smooth surface is mounted, the lower part of the coil 3 shown in FIG. 1 is easily peeled off selectively. On the other hand, when the quartz top plate 10 having the fine unevenness is mounted as in the present invention, the deposit 21 that has entered the valley of the fine unevenness is hit by the ions and enters the valley,
It is difficult to remove during cleaning.
Therefore, if the valleys of the minute irregularities are too deep, the quartz top plate 1
Unless the cleaning condition of 0 is excessive, the deposit cannot be removed.

On the other hand, in the case of the conventional plasma device,
As shown in FIG. 1 of the publication, a microwave is introduced into the plasma generation chamber 1 while generating a magnetic field by the excitation coil 12 to generate plasma, and the generated plasma is diverged by the excitation coil 12. Sample chamber 3 by magnetic field
The guide is guided near the upper portion of the mounting table 8. In such a structure, since the voltage Vdc hardly exists between the plasma and the bell jar, the deposit is not knocked by the plasma ions as in the present embodiment. It is considered different from this embodiment.

Therefore, defining the appropriate range of the surface roughness of the fine irregularities by the average surface roughness Ra instead of the maximum surface roughness Rmax is particularly effective when the plasma region and the minute irregularities as in this embodiment are formed. A device that generates plasma in which a voltage Vdc is present between the member and the member, that is, an inductively coupled plasma or a device for manufacturing an electronic device using a capacitively coupled plasma described later has a remarkable effect. Can be.

In order to remove deposits containing silicon atoms in particular, it is necessary to perform ultrasonic cleaning in a hydrofluoric acid aqueous solution. However, since deposits such as aluminum can be removed by running water, quartz glass is used. The surface of the member is not dulled. Therefore, when minute irregularities are provided on a member made of quartz glass, the effect is large in a plasma apparatus that performs processing to generate a deposit containing silicon atoms.

(Second Embodiment) FIG. 5 is a sectional view schematically showing the structure of a dry etching apparatus according to the present embodiment. In FIG. 5, reference numeral 1 denotes a chamber, 6 denotes a lower electrode provided in a lower portion of the chamber 1, 3 denotes a high-frequency coil, 5 denotes a plasma region formed in the chamber 1, and 7 denotes a processing target provided on the lower electrode 6. Semiconductor substrate,
4 and 8 are all blocking capacitors, 11a and 1
1b is an inlet for supplying gas into the chamber 1,
12 is an outlet for discharging gas from the chamber 1;
Reference numeral 14 denotes a quartz top plate. When performing dry etching, a blocking capacitor 8 is applied to the lower electrode 6.
A high-frequency output RF (13.56 MHz) is applied through the interface to align the direction of the reactive species in the plasma region 5. Further, the high frequency output RF (13.
56 MHz) to generate a high-density plasma region 5 to etch the semiconductor substrate 7 placed on the lower electrode 6.

The feature of this embodiment is that the quartz top plate 14 is formed in a hollow shape so that it can be cooled by water, and the deposit 21 is positively attached to the quartz top plate 14. This is the point that is configured to be. However,
In the present embodiment, the surface of the quartz top plate 14 is finished to be smooth, and the process for roughening the surface as in the first embodiment is not performed.

In this embodiment, the same effects as those of the first embodiment shown in FIGS. 3 and 4 can be obtained by the following operation.

First, by cooling the quartz top plate 14 to a low temperature, the action of depositing the product on the quartz top plate 14 can be enhanced, and the number of particles floating in the chamber 1 can be reduced accordingly. be able to.

In particular, by cooling the quartz top plate 14 to a constant temperature, the falling off of the deposit 21 caused by the heating and cooling cycle of the quartz top plate having a different coefficient of thermal expansion from that of the deposit 21 is suppressed. Thus, the number of particles floating in the chamber 1 can be reduced, and a significant effect can be exhibited.

However, the present invention is not limited to the present embodiment, and it is only necessary to cool the quartz top plate without controlling the temperature to be constant.

In the case of this embodiment, the quartz top plate 1
Since the surface of No. 4 does not have to be roughened, in principle, it is not necessary to consider a decrease in the function of enhancing the adhesion of the deposited material due to cleaning. However, in addition to the configuration of this embodiment, the first embodiment As described above, when the lower surface of the quartz top plate 14 is roughened, the average surface roughness Ra is preferably set to 0.2 to 5 μm, and more preferably to 1 to 2 μm.

(Third Embodiment) Next, a third embodiment will be described. FIG. 6 is a sectional view schematically showing a structure of a dry etching apparatus by RIE (reactive ion etching) using capacitively coupled plasma according to the present embodiment.

In FIG. 6, 1 is a chamber, 6 is a lower electrode provided in the lower portion of the chamber 1, 5 is a plasma region formed in the chamber 1, and 7 is a workpiece set on the lower electrode 6. , A blocking capacitor; 11, an inlet for supplying gas into the chamber 1; and 12, an outlet for discharging gas from the chamber 1. When performing dry etching, a high-frequency output RF (13.56 MHz) is applied to the lower electrode 6 via the blocking capacitor 8 to generate a plasma region 5 and the semiconductor substrate 7 placed on the lower electrode 6. Is to be etched.

Here, the feature of this embodiment is that, as shown in FIG. 6, a quartz ring 15 for controlling the flow of gas and improving the uniformity of etching is provided on the clamp 13. The point is that the surface of the quartz ring 15 is roughened so that the deposit 21 is positively attached to the quartz ring 15.

FIG. 7 shows the number of processed wafers and the number of wafers adhering to a wafer when a dry etching apparatus using a quartz ring having a smooth surface is used and when a dry etching apparatus according to the present embodiment is used. 6 is a graph showing a relationship with the number of particles of 0.3 μm or more.
However, the number of particles shown in the figure is data measured for the first slice in one lot composed of 25 slices. When using a dry etching apparatus equipped with a quartz ring having a smooth surface,
As shown in a line graph SA3 in FIG.
The number of particles increases at about 00 sheets, and cleaning is required at that time. In contrast, when the dry etching apparatus according to the present embodiment is used, as shown in the line graph SA4 in FIG.
No increase in the number of particles was observed even when the number reached 00, and it was possible to perform a clean etching process with a higher yield and a higher yield.

In this embodiment, the same cleaning experiment as in the first embodiment was carried out. As a result, a function of strengthening the adhesion of the deposit by cleaning the quartz ring was given, and this cleaning after cleaning was performed. In order to prevent a decrease in the function, the average surface roughness Ra of the quartz ring is preferably in the range of 0.2 to 5 μm,
More preferably, the average surface roughness Ra is in the range of 1 to 2 μm.

Also, in the plasma generating apparatus using the capacitively coupled plasma of the present embodiment, since the voltage Vdc exists between the plasma 5 and the quartz ring 15, the state of deposition of the deposits on the minute uneven portions is as follows. , Seems to be the same as the first embodiment. Therefore, defining the appropriate range of the surface roughness of the minute uneven portion not by the maximum surface roughness Rmax but by the average surface roughness Ra has a remarkable effect in the electronic device manufacturing apparatus as in the present embodiment.

To remove deposits containing silicon atoms in particular, it is necessary to perform ultrasonic cleaning in a hydrofluoric acid aqueous solution. However, since deposits such as aluminum can be removed by running water, quartz glass is used. The surface of the member is not dulled. Therefore, when minute irregularities are provided on a member made of quartz glass, the effect is large in a plasma apparatus that performs processing to generate a deposit containing silicon atoms.

(Fourth Embodiment) Next, a fourth embodiment will be described.

FIG. 8 is a sectional view schematically showing a structure of a dry etching apparatus using inductively coupled plasma according to the fourth embodiment.

In FIG. 8, 1 is a chamber, 2 is an upper electrode, 6 is a lower electrode installed in the lower part of the chamber 1,
5 is a plasma region formed in the chamber 1, 7 is a semiconductor substrate which is a workpiece to be set on the lower electrode 6,
Reference numerals 4 and 8 denote blocking capacitors, 11 denotes an inlet for supplying gas into the chamber 1, and 12 denotes an outlet for discharging gas from the chamber 1. When performing dry etching, the high frequency output RF (1) is applied to the lower electrode 6 via the blocking capacitor 8.
3.56 MHz), and the directions of the reactive species in the plasma region 5 are aligned. Further, a high frequency output RF (13.56) is supplied to the upper electrode 2 via the blocking capacitor 4.
MHz) to generate a medium-density plasma region 5 and etch the semiconductor substrate 7 placed on the lower electrode 6.

The feature of this embodiment is that the upper electrode 2
Below, a quartz top dispersion plate 30 for dispersing the gas introduced from the introduction port 11 and flowing into the chamber 1 is disposed, and the lower surface of the quartz dispersion plate 30 is not smooth, This quartz dispersing plate 30
This is the point that the deposit 21 is positively adhered to the substrate. That is, a process for roughening the lower surface of the quartz dispersion plate 30 is performed. Examples of processing for forming such a rough surface include sand blasting and grinding using coarse abrasive grains. The average surface roughness Ra of the lower surface of the quartz dispersion plate 30 is in the range of 0.2 to 5 μm.

Also in the plasma apparatus of the present embodiment, dry etching can be performed on the same workpiece as in the first embodiment using the same gas as in the first embodiment.

In the present embodiment, the flow of gas in the chamber 1 is made uniform by the quartz dispersion plate 30 to ensure uniformity of etching on the semiconductor substrate 7 and the lower surface of the quartz dispersion plate 30 Because of the rough finish, the function of adhering a product in the etching process is strengthened, and the adhesion of the deposit is increased to prevent the deposit from falling off. In addition, when the average surface roughness Ra is within an appropriate range, the function is stably maintained even after cleaning.

In the etching apparatus of this embodiment, a voltage Vdc is present between the quartz dispersion plate 30 and the plasma 5. Accordingly, at the time of performing the cleaning for removing the deposited material, the deposited material is in a state of being bitten into the minute concave portion of the quartz dispersion plate 30, so that the effect of applying the present invention is large.

(Fifth Embodiment) Next, a fifth embodiment will be described. FIG. 9 is a cross-sectional view schematically showing a structure of a dry etching apparatus by RIE (reactive ion etching) using two-frequency discharge plasma according to the present embodiment.

In FIG. 9, 1 is a chamber, 6 is a lower electrode provided in the lower part of the chamber 1, 5 is a plasma region formed in the chamber 1, and 7 is a workpiece set on the lower electrode 6. , A blocking capacitor; 11, an inlet for supplying gas into the chamber 1; and 12, an outlet for discharging gas from the chamber 1. When performing dry etching, a high-frequency output RF (13.56 MHz) is applied to the lower electrode 6 via the blocking capacitor 8 to generate a plasma region 5 and the semiconductor substrate 7 placed on the lower electrode 6. Is to be etched.

Here, a feature of the present embodiment is that a quartz top dispersion plate 30 for dispersing the gas introduced from the introduction port 11 and flowing into the chamber 1 is disposed in the upper part of the chamber. Therefore, the lower surface of the quartz dispersion plate 30 is not smooth, and fine irregularities are intentionally generated.
This is the point that the deposit 21 is positively adhered to the substrate. That is, a process for roughening the lower surface of the quartz dispersion plate 30 is performed. Examples of processing for forming such a rough surface include sand blasting and grinding using coarse abrasive grains. The average surface roughness Ra of the lower surface of the quartz dispersion plate 30 is in the range of 0.2 to 5 μm.

Also in this embodiment, the flow of gas in the chamber 1 is made uniform by the quartz dispersion plate 30 to ensure uniformity of etching on the semiconductor substrate 7 and the lower surface of the quartz dispersion plate 30 Because of the rough finish, the function of adhering a product in the etching process is strengthened, and the adhesion of the deposit is increased to prevent the deposit from falling off. Further, when the average surface roughness Ra is within an appropriate range, the function is stably maintained even after cleaning.

Note that also in the etching apparatus of the present embodiment, a voltage Vdc exists between the quartz dispersion plate 30 and the plasma 5. Accordingly, at the time of performing the cleaning for removing the deposited material, the deposited material is in a state of being bitten into the minute concave portion of the quartz dispersion plate 30, so that the effect of applying the present invention is large.

(Others) In the first, third to fifth embodiments, the surface of the quartz top plate 10, the quartz ring 15, or the quartz dispersion plate 30 is formed rough. The same effect can be obtained by making the inner wall surface of the casing rough. Further, even if not all parts are made of glass, the effect of the present invention can be exerted, for example, by roughening the surface of an electrode or the like having only a surface part coated with a glassy substance. Although the surface roughness is relatively large, which does not fall within the concept of surface roughness, it is also possible to increase the surface area by deliberately providing minute irregularities on the inner wall surface of the chamber or the surface of the internal member, considering the size of the object. The effects of the invention can be obtained.

In particular, the surface of a transparent member such as quartz glass is often mirror-finished in order to allow light to pass through. The effects of the invention can be exhibited.

In each of the above embodiments, an example in which the present invention is applied to a dry etching apparatus has been described. However, the present invention is not limited to such an embodiment, and the present invention is not limited to such a case. The present invention can be applied to all processing apparatuses such as a sputtering apparatus. Further, the present invention is not limited to an apparatus for manufacturing an electronic device, but is applied to all electronic devices, such as a liquid crystal device, in which adhesion of foreign matter is a problem.

[0094]

According to the first to sixth aspects of the present invention, in the electronic device manufacturing apparatus, the apparatus has a function of strengthening the adhesion of products generated when processing the workpiece on the ceiling of the chamber, and Since the fine irregularities finished to the average surface roughness Ra that can maintain the function even after the ceiling is cleaned are provided, the function of enhancing the adhesion of the product can be stably maintained even if the cleaning is performed repeatedly. Therefore, it is possible to improve the yield of electronic devices and the reliability of manufactured electronic devices.

According to the seventh to thirteenth aspects, the apparatus for manufacturing an electronic device has a function of enhancing adhesion of a product generated when processing a workpiece to an internal member provided in the chamber. In addition, the fine irregularities finished to the average surface roughness Ra that can maintain the function even after the ceiling is cleaned are provided, so that even if the cleaning is repeatedly performed, the function of enhancing the adhesion of the product is stably maintained. Therefore, the yield of electronic devices can be improved and the reliability of manufactured electronic devices can be improved.

According to the fourteenth and fifteenth aspects, in the electronic device manufacturing apparatus, the means for cooling at least a part of the chamber is provided. Therefore, the number of particles floating on the substrate can be reduced, so that the manufacturing yield of the electronic device can be improved and the reliability of the manufactured electronic device can be improved.

According to the sixteenth and seventeenth aspects, as a method of manufacturing an electronic device, at least a part of the chamber is cooled while a desired process is performed on the electronic device. The number of particles floating in the chamber can be reduced by the action and the action of preventing the volatilization of the product, so that the manufacturing yield of the electronic device can be improved and the reliability of the manufactured electronic device can be improved. Can be.

[Brief description of the drawings]

FIG. 1 is a sectional view of a dry etching apparatus according to a first embodiment.

FIG. 2 is data showing the results of measuring the surface roughness of a quartz top plate used in the first embodiment and the surface roughness of a commonly used quartz top plate with a stylus type surface roughness measuring instrument.

FIG. 3 shows the relationship between the order of slice processing in one lot and the number of foreign substances in one slice that becomes a pattern defect in the dry etching apparatus according to the first embodiment and the dry etching apparatus equipped with a quartz top plate having a smooth surface. Is a graph in which is plotted.

FIG. 4 shows the relationship between the number of processed wafers and the number of particles of 0.3 μm or more adhering to a wafer in the dry etching apparatus according to the first embodiment and the dry etching apparatus equipped with a quartz top plate having a smooth surface. It is a line graph.

FIG. 5 is a sectional view of a dry etching apparatus according to a second embodiment.

FIG. 6 is a sectional view of a dry etching apparatus according to a third embodiment.

FIG. 7 shows the relationship between the number of processed wafers and the number of particles of 0.3 μm or more adhering to a wafer in the dry etching apparatus according to the third embodiment and a dry etching apparatus equipped with a quartz ring having a smooth surface. It is a line graph.

FIG. 8 is a sectional view of a dry etching apparatus according to a fourth embodiment.

FIG. 9 is a sectional view of a dry etching apparatus according to a fifth embodiment.

FIG. 10 is a cross-sectional view of a conventional plasma apparatus using ECR type plasma.

[Explanation of symbols]

 Reference Signs List 1 chamber 2 upper electrode 3 coil 4 blocking capacitor 5 plasma region 6 lower electrode 7 semiconductor substrate (electronic device) 8 blocking capacitor 10 quartz top plate 11 introduction port 12 discharge port 13 clamp 14 quartz top plate 15 quartz ring 21 deposition object 30 quartz Dispersion plate

────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] January 8, 1998

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0046

[Correction method] Change

[Correction contents]

[Experiment on Deposit Adhesion Enhancing Function] FIGS. 2 (a) and 2 (b) show one quartz top plate used in the present embodiment and a commonly used quartz having a smooth surface. It is the data which shows the example which measured the surface roughness about the top plate using the stylus type surface roughness measuring device. FIG.
As shown in FIG. 2B, the average surface roughness Ra of the quartz top plate which is widely used is as small as about 0.04 μm, whereas as shown in FIG. The average surface roughness Ra of the quartz top plate, which is one example, is extremely large at 1.28 μm due to sandblasting. However, in the present embodiment, as described below, samples having various surface roughnesses in the range of Ra 0.2 to 5 μm are prepared, and when these samples are used, the number of particles adhering to the wafer, A test is being conducted on the removal of deposits on the quartz top plate.

────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/205 H01L 21/205 H05H 1/46 H05H 1/46 B (72) Inventor Hideo Ichimura 1 Yukicho, Takatsuki-shi, Osaka No. 1 Matsushita Electronics Co., Ltd. (72) Ohira Kajiwara, the inventor 1-1, Sachimachi, Takatsuki-shi, Osaka Prefecture Matsushita Electronics Co., Ltd. Matsushita Electronics Industrial Co., Ltd. (72) Inventor Satoshi Nakagawa 1-1, Sachimachi, Takatsuki-shi, Osaka Matsushita Electronics Industrial Co., Ltd.

Claims (17)

[Claims] 1. An electronic device manufacturing apparatus for manufacturing an electronic device by performing processing on a workpiece, wherein the apparatus is configured to be able to maintain an internal atmosphere in an atmosphere for processing the workpiece. A chamber, which is disposed in the chamber, and a workpiece installation part for installing the workpiece, formed on an inner surface of a ceiling of the chamber, and is generated when the workpiece is processed. Manufacturing an electronic device having a function of enhancing the adhesion of a product, and a micro uneven portion finished to an average surface roughness Ra capable of maintaining the function even after cleaning the ceiling portion. apparatus. 2. The electronic device manufacturing apparatus according to claim 1, wherein the ceiling is made of quartz glass, and the fine irregularities have an average surface roughness Ra of 0.2 to 5 μm.
An electronic device manufacturing apparatus, characterized in that: 3. The apparatus for manufacturing an electronic device according to claim 1, wherein the apparatus is arranged outside the chamber, close to the ceiling, and
An apparatus for manufacturing an electronic device, further comprising a coil for sending an electromagnetic wave for generating inductively coupled plasma in the chamber. 4. The apparatus for manufacturing an electronic device according to claim 1, wherein the workpiece is made of a material containing at least one of polycrystalline silicon, amorphous silicon, and single crystal silicon. The device for manufacturing the electronic device is an etching device for etching the portion to be processed of the workpiece, and a gas containing chlorine or bromine is provided in the chamber. An apparatus for manufacturing an electronic device, further comprising a gas supply device for introducing. 5. The apparatus for manufacturing an electronic device according to claim 1, wherein said workpiece has a portion to be processed made of silicon nitride. An etching device for etching a processed portion of the workpiece, further comprising a gas supply device for introducing a gas containing fluorine into the chamber, the device for manufacturing an electronic device. . 6. The electronic device manufacturing apparatus according to claim 1, wherein the workpiece has a processing target portion made of silicon oxide. An etching device for etching a processed portion of the workpiece, further comprising a gas supply device for introducing a gas containing fluorine into the chamber, the device for manufacturing an electronic device. . 7. An electronic device manufacturing apparatus for manufacturing an electronic device by performing processing on a workpiece, wherein the apparatus is configured to be able to maintain an internal atmosphere in an atmosphere for processing the workpiece. A chamber provided in the chamber, the workpiece installation part for installing the workpiece, an internal member provided in the chamber, made of quartz glass, Formed on the surface exposed in the chamber, has a function of strengthening the adhesion of products generated when processing the workpiece, and is finished to an average surface roughness Ra that can maintain the function even after cleaning. An electronic device manufacturing apparatus, comprising: 8. The apparatus for manufacturing an electronic device according to claim 7, wherein an average surface roughness Ra of the fine unevenness is 0.2 to 5 μm.
An electronic device manufacturing apparatus, characterized in that: 9. The apparatus for manufacturing an electronic device according to claim 7, wherein the internal member is disposed on the workpiece installation portion so as to surround a periphery of the workpiece, and a gas in the chamber is provided. An electronic device manufacturing apparatus, characterized in that the apparatus is a quartz ring for controlling a flow of a liquid. 10. The apparatus for manufacturing an electronic device according to claim 7, wherein a gas inlet for introducing a gas for processing the workpiece into the chamber is formed in a ceiling of the chamber. The internal member is a quartz dispersion plate that is disposed close to the ceiling of the chamber and that disperses the flow of gas introduced into the chamber from the introduction port into the chamber. An electronic device manufacturing apparatus, characterized in that: 11. The apparatus for manufacturing an electronic device according to claim 7, wherein the workpiece includes at least one of polycrystalline silicon, amorphous silicon, and single-crystal silicon. The apparatus for manufacturing an electronic device is an etching apparatus for etching the processed part of the workpiece, and includes chlorine or bromine in the chamber. An apparatus for manufacturing an electronic device, further comprising a gas supply device for introducing a gas. 12. The apparatus for manufacturing an electronic device according to claim 7, wherein the object to be processed has a portion to be processed made of silicon nitride. Is an etching apparatus for etching a portion to be processed of the workpiece, further comprising a gas supply device for introducing a gas containing fluorine into the chamber, wherein Manufacturing equipment. 13. The apparatus for manufacturing an electronic device according to claim 7, wherein the workpiece has a portion to be processed made of silicon oxide. Is an etching apparatus for etching a portion to be processed of the workpiece, further comprising a gas supply device for introducing a gas containing fluorine into the chamber, wherein Manufacturing equipment. 14. An electronic device manufacturing apparatus for manufacturing an electronic device by performing processing on a workpiece, wherein the apparatus is configured to be able to maintain an internal atmosphere in an atmosphere for processing the workpiece. A chamber, a workpiece installation part disposed in the chamber, for installing the workpiece, and cooling means for cooling at least a part of the chamber. Electronic device manufacturing equipment. 15. The apparatus for manufacturing an electronic device according to claim 14, wherein said cooling means cools a top plate of said chamber. 16. A workpiece is set in a chamber,
A process for manufacturing an electronic device is performed on the workpiece, and at least a portion of the chamber is cooled during the process to prevent a product generated during the process from depositing on the inner surface of the chamber. A method for manufacturing an electronic device, comprising: 17. The method for manufacturing an electronic device according to claim 16, wherein a temperature of at least a part of the chamber is kept constant.