JPH0993005A - Electrode for high frequency circuit, transmission line and resonator using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a low-loss electrode for high frequency circuit, for which a surface effect is reduced, for a circuit such as a transmission line or resonator to be used in a high frequency area. SOLUTION: Concerning structure, plural metal films 11-13 on which high frequency currents flow, dielectric films 21-22 for separating he metal films 11-13 and connection conductors 31-32 for connecting the plural metal films 11-13 are provided and the metal films 11-13 and the dielectric films 21-22 are mutually laminated. Since the plural metal films 11-13 are electrically connected by the connection conductors 31-32 at the peripheral edge part or central part of metal films 11-13, the high frequency current flows while being distributed to the plural metal films 11-13. Thus, the electrode for high frequency circuit, for which the concentration of currents onto the surfaces of metal films is relaxed and the loss in the high frequency area is reduced in comparison with an electrode composed of a single metal film, is provided.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency circuit electrode used in a circuit or a component handling a signal in a high frequency band such as UHF band to millimeter wave band, and a transmission line using the same.
It relates to a resonator.

[0002]

2. Description of the Related Art With the recent development of multimedia in the field of information communication, there is an increasing need for large-capacity high-speed data transmission of images and the like, especially in the field of wireless communication. Further, as the number of users of mobile phones and the like increases, the necessity of securing communication channels is also increasing. From the above, the frequency applied to wireless communication is increasing, and this trend is expected to continue in the future. Increasing the applied frequency raises a problem of increased loss in the high frequency circuit part in the wireless communication device. In particular, since the conductor loss of the circuit components and the transmission line increases as the frequency increases, it is an important subject to reduce the loss of the electrodes used for these circuit components and lines.

The electrodes used in the conventional high frequency circuit will be described below. Here, the microstrip structure transmission line is taken as a high-frequency circuit.

FIG. 11 is a perspective view of a microstrip line having a uniform line width. In FIG. 11, reference numeral 104 is a dielectric substrate made of a dielectric material, 105 is a ground electrode formed only on a metal film provided on the back surface of the dielectric substrate 104, and 101 is formed on the upper surface of the dielectric substrate 104 only by a metal film. It is a transmission line electrode that propagates high frequency signals.

When a high frequency signal is applied to the transmission line electrode 101, the high frequency signal propagates as a quasi-TEM mode having a slight electromagnetic field component in the traveling direction. With the above configuration, this circuit operates as a transmission line at high frequencies.

[0006]

However, since the conventional transmission line electrode is composed only of the metal film, the loss increases due to the skin effect in which the high frequency current concentrates on the surface of the metal film as the frequency increases. Had the problem of doing.

In the conventional example of FIG. 11, in the ground electrode 105 and the transmission line electrode 101, high frequency current concentrates on the surface in contact with the dielectric substrate 104. Since the resistance value for a high-frequency current is inversely proportional to the cross-sectional area of the portion of the conductor where the current flows, the resistance value increases as the current concentrates, and the loss increases. Since most of the high-frequency current flows to the metal surface portion, simply increasing the thickness of the metal film cannot solve the problem of increased loss.

The present invention solves the above-mentioned conventional problems, and an object thereof is to provide an electrode having low loss in a high frequency region.

[0009]

In order to achieve the above object, a high frequency circuit electrode of the present invention comprises a plurality of metal films through which a high frequency current flows, a dielectric film for separating the plurality of metal films, and A structure comprising a connecting conductor for connecting a plurality of metal films, wherein the metal film and the dielectric film are alternately laminated,
By connecting a part or all of the plurality of metal films with the connection conductor, a high-frequency circuit electrode having a lower loss than that of an electrode having only the metal film is configured.

[0010]

According to the present invention, a dielectric film is provided between a plurality of metal films to separate them, and the plurality of metal films are connected by a connecting conductor, whereby a high-frequency current is distributed and flows to each metal film. As compared with an electrode using a single metal film, current concentration on the surface of the metal film is relaxed, and a high frequency circuit electrode with reduced loss in the high frequency region can be realized.

[0011]

【Example】

(Embodiment 1) Hereinafter, a first embodiment of the present invention will be described with reference to FIG. 1A is a cross-sectional view of a microstrip type transmission line using a high frequency circuit electrode according to the first embodiment of the present invention, and FIG. 1B is a microstrip using the same high frequency circuit electrode. It is a perspective view of a mold transmission line. Note that FIG. 1A shows a cross section of a portion cut by the plane indicated by AA ′ in FIG.

In FIG. 1, 11 to 13 are metal films, 21
22 are dielectric films 31 to 31 for separating the metal films 11 to 13.
Reference numeral 32 denotes the metal films 11 at both ends of the line-shaped metal films 11 to 13.
To 13 and connecting conductors that are connected to an external circuit as necessary, 42 is a dielectric substrate on which a transmission line is mounted, and 52 is a ground made of a single metal film provided on the back surface of the dielectric substrate 42. It is a conductor.

The operation of the high-frequency circuit electrode having the above structure will be described below. Connection conductors 31 to 3
When 2 is excited by a high frequency signal, the excited high frequency current causes the three metal films 11 to 13 connected by the connection conductors.
Distribute and flow to.

When the metal film is a single layer, the skin effect in which the excited high frequency current is concentrated on the surface portion of the metal occurs and the cross-sectional area of the current flowing portion becomes small,
The resistance value increases, leading to an increase in loss.

However, according to the present embodiment, since the plurality of metal films 11 to 13 are connected by the connecting conductors 31 to 32, the high frequency current is distributed, so that the concentration on the metal surface is dispersed. , The resistance value can be lowered,
A low loss electrode can be realized. Further, in this embodiment, since the connection conductors 31 to 32 are provided, the metal films 11 to 11 are formed.
The current distribution to 13 is mainly performed via the connecting conductors 31 to 32, and the thickness of the dielectric films 21 to 22 hardly affects the loss improving effect. Therefore, the microstrip type transmission line shown in this embodiment has a lower transmission loss per unit length than a line using electrodes of a single-layer metal film.

As described above, according to this embodiment, the plurality of metal films 11 to 13 separated by the dielectric film and the metal film 11 are used.
The connection conductors 31 to 32 connecting the elements 13 to 13 can reduce the resistance value to a high frequency current and realize a low loss electrode in a high frequency region, and a low loss transmission line by using a high frequency circuit electrode. Can be realized.

(Second Embodiment) Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 2A is a sectional view of a microstrip type transmission line using a high frequency circuit electrode according to the second embodiment of the present invention.
(B) is a perspective view of the microstrip type transmission line using the same high frequency circuit electrode. Note that FIG. 2A shows a cross section of a portion cut by a plane indicated by AA ′ in FIG.

2 is different from the configuration of FIG. 1 in that the connection conductors 31 to 32 are connected only to the metal films 12 to 13 and the ground conductor provided on the back surface of the dielectric substrate 42 is also the connection conductor 33. The point is that it has a multi-layer structure composed of the metal films 14 to 15 and the dielectric film 23 connected by. The same reference numerals as those in FIG. 1 have the same functions as those in FIG.

The operation of the high-frequency circuit electrode configured as described above will be described below. The basic operation is the same as in the first embodiment. The high frequency current is connected to the connection conductors 31 to 31.
32 distributes and flows to the connected metal films 12 to 13.

Although the metal film 11 is not connected to the metal films 12 to 13, the high frequency current is similarly distributed by the function of electromagnetic field coupling through the dielectric film 21. Therefore, the loss can be reduced as in the first embodiment.

Further, since a high-frequency current also flows in the ground conductor on the back surface of the dielectric substrate 42, the metal film 14 to 15 and the dielectric film 23 connected to the ground conductor by the connection conductor 33 are also formed. A transmission line with lower loss can be realized by adopting a multi-layer structure and by adopting a configuration capable of distributing current to the plurality of metal films 14 to 15.

Therefore, the transmission line shown in this embodiment can reduce the transmission loss per unit length as compared with the line using the electrode of the single-layer metal film.

As described above, according to the present embodiment, by the action of the electromagnetic field coupling through the connection conductors 31 to 32 connecting the metal films 12 to 13 and the dielectric films 21 to 22 and 23, the dielectric effect is achieved. Since the current can be distributed to the plurality of metal films 12 to 13 and 14 to 15 separated by the body films 21 to 22 and 23, the concentration of the current due to the skin effect is relaxed and the resistance value to the high frequency current is lowered. Therefore, an electrode with low loss can be realized. Moreover, a low-loss transmission line can be realized by using the high-frequency circuit electrode in the transmission line portion and the ground conductor portion.

(Embodiment 3) Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 3A is a sectional view of a microstrip type transmission line using a high frequency circuit electrode according to a third embodiment of the present invention.
(B) is a perspective view of the microstrip type transmission line using the same high frequency circuit electrode. Note that FIG. 3A shows a cross section of a portion cut by the plane indicated by BB ′ in FIG. 3B.

3 is different from that of FIG. 1 in that connection conductors 31 to 32 and 34 to 35 for connecting metal films are provided at all end portions of the peripheral portions of the metal films 11 to 13. . Those having the same numbers as those in FIG.
It has the same function as.

The operation of the high-frequency circuit electrode configured as described above will be described below. The basic operation is the same as in the first embodiment. In the high-frequency circuit electrode of this embodiment, not only the connection conductors 31 to 32 provided at the excitation end of the transmission line but also the connection conductors 34 to 35 provided on the side surface portion are provided as connection conductors for connecting the metal film. The distribution efficiency of the high frequency current is further enhanced. Since the electric current is particularly concentrated at the end of the line, by providing the connecting conductors 34 to 35 for distributing the electric current at this end, it is possible to further reduce the loss.

As described above, according to this embodiment, by providing the connection conductors 31 to 32 and 34 to 35 for connecting a plurality of metal films at all the ends of the peripheral portions of the metal films 11 to 13, Since it has a structure in which a current can be distributed to the plurality of metal films 11 to 13 separated by the dielectric films 21 to 22,
Since the concentration of current due to the skin effect can be relaxed and the resistance value to high frequency current can be lowered, a low loss electrode can be realized. Moreover, a low-loss transmission line can be realized by using the electrodes for high frequency circuits.

(Fourth Embodiment) Next, a fourth embodiment of the present invention will be described with reference to FIG. FIG. 4A is a sectional view of a microstrip type transmission line using a high frequency circuit electrode according to a fourth embodiment of the present invention.
(B) is a perspective view of the microstrip type transmission line using the same high frequency circuit electrode. Note that FIG. 4A shows a cross section of a portion cut by the plane indicated by BB ′ in FIG. 4B.

4 is different from the structure shown in FIG. 1 in that the metal films 11 to 13 and the dielectric films 21 to 22 have a laminated structure in which a part of the film surface overlaps. The same reference numerals as those in FIG. 1 have the same functions as those in FIG.

The operation of the high-frequency circuit electrode configured as described above will be described below. The basic operation is the same as in the first embodiment. In the case of the structure in which the dielectric films 21 to 22 and the metal films 11 to 13 are overlapped with each other only on a part of the film surface, the electromagnetic field coupling between the metal films is weaker than the structure in which all the surfaces are overlapped. The current distribution efficiency due to the coupling is reduced.

However, since the high-frequency circuit electrode of this embodiment is provided with the connecting conductors 31 to 32 for connecting the metal films 11 to 13, a high-frequency current is mainly applied to the metal films 11 to 13 by the connecting conductors 31 to 32. Is distributed,
The distribution efficiency does not decrease and the skin effect can be reduced.

As described above, according to this embodiment, even if the dielectric films 21 to 22 and the metal films 11 to 13 have a laminated structure in which only a part of the film surface overlaps, the metal film 11 is formed.
High-frequency currents are distributed to the plurality of metal films 11 to 13 by the connection conductors 31 to 32 connecting the elements 13 to 13 and the resistance value can be reduced, so that a low-loss electrode can be realized.

(Fifth Embodiment) Next, a fifth embodiment of the present invention will be described with reference to FIG. FIG. 5 is an assembled perspective view of a high frequency circuit electrode according to a fifth embodiment of the present invention.

In FIG. 5, 61 to 63 are metal films 11 to 11.
It is a through hole which is provided inside 13 and connects between the metal films 11 to 13.

5 is different from the structure of the high-frequency circuit electrode shown in FIG. 1 in that it has a plurality of metal films 11 to 1 in FIG.
3 was connected by the connection conductors 31 to 32, but the connection conductor 3
The point is that through holes 61 to 63 are provided instead of 1 to 32. The same reference numerals as those in FIG. 1 have the same functions as those in FIG.

The operation of the high-frequency circuit electrode configured as described above will be described below. The basic operation is the same as in the first embodiment. In this embodiment, the metal films 11 to 11
13 and the dielectric films 21 to 22 through holes 61 to 63
Since the high-frequency current is distributed to the metal films 11 to 13 by the action of the through holes 61 to 63, the current concentration due to the skin effect is alleviated and the loss can be reduced.

When the electrodes for the high frequency circuit of this embodiment are produced, if there is a hole in the film during the process of forming the dielectric films 21 to 22 or laminating the films, the dielectric film 21 to When the material of 22 is poor and the metal films 11 to 13 cannot be separated, it means that through holes for electrically connecting a plurality of conductor films are formed, which is the same as the electrode structure of this embodiment. Of course, it goes without saying that the high frequency circuit electrode of this embodiment can be realized by intentionally forming a through hole.

As described above, according to this embodiment, the plurality of metal films 11 to 13 separated by the dielectric films 21 to 22,
The metal film 1 is provided at least in the metal films 11 to 13.
Through holes 61 to 63 connecting between 1 to 13
Since the resistance value to the high frequency current can be lowered, a low loss electrode can be realized.

In this embodiment, the through holes 61 to 6 are used.
Although the example in which three is three is shown, it goes without saying that the number of through holes may be any number. Further, although the example in which all the metal films 11 to 13 are connected by the through holes is shown, it is needless to say that the same effect can be obtained even if a part of the metal films is connected. Also,
It is possible to change the diameter of the through hole and fill the through hole with metal.

(Sixth Embodiment) Next, a sixth embodiment of the present invention will be described with reference to FIG. FIG. 6A is a perspective view of a high-frequency signal transmission line using a high-frequency circuit electrode according to a sixth embodiment of the present invention, and FIG. 6B is a sectional view of the same.

6 is different from that of FIG. 1 in that a groove is provided in a portion of the surface of the dielectric substrate 42 where the transmission line is mounted, and the metal films 11 to 13 and the dielectric films 21 to 2 are provided in the groove.
This is a point that a laminated structure in which two layers are alternately stacked is formed, and a cross section of the laminated layer is exposed on the surface of the dielectric substrate 42 and is connected by the connection conductor 31. The same reference numerals as those in FIG. 1 have the same functions as those in FIG.

The operation of the high-frequency circuit electrode configured as described above will be described below. The basic operation is the same as in the first embodiment. In the high-frequency circuit electrode of this embodiment, as in the first embodiment, by connecting the metal films 11 to 13 separated by the dielectric films 21 to 22 with the connection conductor 31, a high-frequency current is applied to each metal. Since it is distributed to the membrane, a low-loss electrode with reduced skin effect can be realized.

Since the electrode of this embodiment has a structure in which a groove is provided on the dielectric substrate 42 and the metal films 11 to 13 are provided inside the electrode, the metal with respect to the width of the transmission line is compared with the case where the groove is not formed. The film area can be increased, and the resistance value of the transmission line per unit length can be further reduced. Therefore, the transmission line shown in this embodiment can reduce the transmission loss as compared with the transmission line using the electrodes of the single-layer metal film.

Although the groove provided on the dielectric substrate in FIG. 6 has a rectangular cross section, if the groove has a curved surface such as a U shape, the groove can be easily processed, and the metal films 11 to 13 and the dielectric films 21 to 21 are formed. Since the electrodes 22 are easily laminated, the high-frequency circuit electrode of this embodiment can be easily formed.

The connection conductor 31 is provided on the upper surface of the end portion where the metal films 11 to 13 and the dielectric films 21 to 22 are laminated.
It may be provided on the side surface of the end portion. As described above, according to this embodiment, the plurality of metal films 1 separated by the dielectric films 21 to 22 are formed.
1 to 13 and the connection conductor 31 that connects the metal films 11 to 13 has a structure in which the current can be distributed to the plurality of metal films 11 to 13, so that the concentration of the current due to the skin effect is relaxed and the high frequency current is applied. Since the resistance value can be lowered,
A low loss electrode can be realized.

Further, by forming a groove on the surface on which the electrode is mounted and forming the metal films 11 to 13 and the dielectric films 21 to 22 inside the groove, a large metal film area can be obtained, so that the electrode can be made lower. Loss can be achieved.

(Embodiment 7) Next, a seventh embodiment of the present invention will be described with reference to FIG. FIG. 7A is a perspective view of a high-frequency signal transmission line using a high-frequency circuit electrode according to a seventh embodiment of the present invention, and FIG. 7B is used for the transmission line portion of FIG. 7A. It is an expanded sectional view which expanded the cross section of the electrode for high frequency circuits.

7 is different from that of FIG. 1 in that the metal films 11 to 13 and the dielectric films 21 to 22 are mounted vertically to the surface of the dielectric substrate 42 on which the electrodes are mounted, and This is the point where they are stacked alternately in the horizontal direction on the surface of the substrate 42. Those having the same numbers as those in FIG.
It has the same function as.

The operation of the high-frequency circuit electrode configured as described above will be described below. The basic operation is the same as in the first embodiment. Even in the structure in which the metal films 11 to 13 and the dielectric films 21 to 22 are alternately overlapped with each other in the horizontal direction with respect to the surface of the dielectric substrate 42, as in the first embodiment, the high frequency current is the connecting conductor. It flows by being distributed to the three metal films connected by 31. Therefore, it is possible to realize a low-loss electrode in which the skin effect is relaxed, and the transmission line shown in this embodiment can reduce the transmission loss per unit length as compared with a line using an electrode of a single-layer metal film. .

As described above, according to this embodiment, the plurality of metal films 11 to 13 separated by the dielectric films 21 to 22,
Since the connection conductor 31 connecting the metal films 11 to 13 has a structure in which the current can be distributed to the plurality of metal films 11 to 13, the concentration of the current due to the skin effect is relaxed and the resistance value to the high frequency current is lowered. Therefore, an electrode with low loss can be realized.

(Embodiment 8) Next, an eighth embodiment of the present invention will be described with reference to FIG. FIG. 8A is a perspective view of a high-frequency signal transmission line using a high-frequency circuit electrode according to an eighth embodiment of the present invention, and FIG. 8B is used for the transmission line portion of FIG. 8A. It is an expanded sectional view which expanded the cross section of the electrode for high frequency circuits.

8A and 8B is different from the configuration of FIG. 1 in that the line-shaped metal films 11 to 13 are arranged side by side in the surface direction of the dielectric substrate 42. The same reference numerals as those in FIG. 1 have the same functions as those in FIG.

Incidentally, in FIG. 8C, connection conductors 36 to 39 are newly provided for the transmission line of FIG.
It is the figure which showed the structure of the transmission line which used air instead of the dielectric films 21-22 which isolate | separate-.

The operation of the high-frequency circuit electrode configured as described above will be described below with reference to FIGS. 8 (a) and 8 (b). The basic operation is the same as in the first embodiment. Since the metal films 11 to 13 are separated by the dielectric films 21 to 22 and the metal films 11 to 13 are connected by the connection conductors 31 to 32, the excited high frequency current is generated by the connection conductor 31.
~ 32 because it distributes and flows to the metal films 11 to 13,
The resistance value can be reduced and a low loss electrode can be realized.

Next, FIG. 8C will be described. FIG.
8C shows connection conductors 36 to 39 for connecting the metal films 11 to 13 to the transmission line shown in FIG. 8A, and the dielectric films 21 to 22 are provided instead of the dielectric films 21 to 22. 22 is omitted and air is used. The connection conductors 36 to 3
With the structure in which a plurality of metal films 11 to 13 are electrically connected through 9, the distribution efficiency of the high frequency current to each metal film 11 to 13 is further increased. Therefore, the current concentration due to the skin effect is alleviated and the loss can be reduced. Note that FIG.
Although air is used as the dielectric film in the embodiment of (c), even in this case, if a plurality of metal films 11 to 13 are separated, a current is distributed to each metal film. Is the same as that of the other embodiments, so that an electrode with a low loss can be similarly realized.

As described above, according to this embodiment, the plurality of metal films 11 to 13 separated by the dielectric films 21 to 22,
Connection conductors 31 to connect the metal films 11 to 13
Since 32 has a structure in which a current can be distributed to the plurality of metal films 11 to 13, the concentration of the current due to the skin effect can be relaxed and the resistance value to the high frequency current can be lowered, so that a low loss electrode can be realized. Further, the connection conductors 36 to connect the metal films 11 to 13 inside the metal films 11 to 13
By providing 39, the current is distributed not only in the connection conductors 36 to 39 but also in the metal films 11 to 13, so that the resistance value can be further reduced, and thus the loss of the electrode can be further reduced.

The connecting conductors 36 to 39 can be realized by using electrodes of other shapes such as air bridges, ribbons, and wire bonding as long as the metal films can be electrically connected. Needless to say, the number of connecting conductors may be any number.

(Embodiment 9) Next, a ninth embodiment of the present invention will be described with reference to FIG. FIG. 9A is a perspective view of a coaxial type transmission line using a high frequency circuit electrode according to a ninth embodiment of the present invention, and FIG.
It is an expanded sectional view which expanded the cross section of the coaxial line of (a).

In FIG. 9, 43 is a coaxial dielectric. 9 is different from FIG. 1 in that a coaxial type transmission line is taken as an example of a high-frequency circuit to which electrodes for high-frequency circuits are applied, and metal films 11 to 13 and dielectric films 21 to 22 are concentrically stacked alternately. The points are stacked. The same reference numerals as those in FIG. 1 have the same functions as those in FIG.

The operation of the high-frequency circuit electrode configured as described above will be described below. The basic operation is the same as in the first embodiment. The high frequency current excited in the coaxial center conductor is distributed and flows to the metal films 11 to 13 and 14 to 15 connected by the connection conductors 31 to 32.

Therefore, the transmission line shown in the present embodiment can reduce the transmission loss per unit length as compared with the transmission line using the electrodes made of only metal. The coaxial type transmission line is a TEM mode transmission line, and since a high frequency current flows through the outer conductor as well as the coaxial center conductor due to the electromagnetic waves generated in the dielectric body 43, the high frequency circuit electrode of this embodiment is also applied to the outer conductor. The transmission loss is further reduced by using.

As described above, according to this embodiment, the plurality of metal films 11 to 11 separated by the dielectric films 21 to 22 and 43 are formed.
13 and 14 to 15 and metal films 11 to 13 and 14 to 1
Since the connection conductors 31 to 32 connecting the five elements can reduce the resistance value to the high frequency current, a low loss electrode can be realized.

(Embodiment 10) Next, a tenth embodiment of the present invention will be described with reference to FIG. FIG.
FIG. 10A is a perspective view of a dielectric coaxial resonator using a high frequency circuit electrode according to a tenth embodiment of the present invention.
FIG. 10B shows a cross section of a portion cut by the plane indicated by AA ′ in FIG.

10 is different from that of FIG. 1 in that
The dielectric coaxial resonator is used as an example of a high-frequency circuit to which the high-frequency circuit electrode is applied, and the high-frequency circuit electrode is provided on the surface of the dielectric block 41. The same reference numerals as those in FIG. 1 have the same functions as those in FIG.

The operation of the high-frequency circuit electrode configured as described above will be described below. The basic operation is the same as in the first embodiment. When the dielectric resonator is excited, a high frequency current is excited and distributed and flows to the metal films 11 to 13 connected by the connection conductor 31. Therefore, as in the first embodiment, it is possible to reduce the loss of the electrode portion,
Since the resonator shown in the present embodiment can reduce the conductor loss as compared with the resonator using the electrode of the single-layer metal film, a resonator having a high unloaded Q can be realized.

As described above, according to this embodiment, the connection conductor 31 for connecting the metal films 11 to 13 and the dielectric film 2 are connected.
Due to the function of electromagnetic field coupling through 1 to 22, the dielectric film 2
Since the current can be distributed to the plurality of metal films 11 to 13 separated by 1 to 22, the concentration of the current due to the skin effect can be relaxed and the resistance value to the high frequency current can be lowered, so that a low loss electrode can be obtained. realizable. Further, by using the high frequency circuit electrode, a resonator with a high unloaded Q can be realized.

As an example to which the high-frequency circuit electrode of the present invention is applied, Examples 1 to 8 show a transmission line formed on a dielectric substrate whose back surface is a ground conductor, and Example 9 shows a coaxial type transmission. Although a line is shown and the dielectric coaxial resonator is shown in the tenth embodiment, it can be used as an electrode of any high-frequency circuit having a conductor electrode such as a transmission line of another type such as a coplanar type or a waveguide.

In the first to tenth embodiments, the electrode structure mainly composed of three layers of metal film and two layers of dielectric film is shown. However, if the structure is such that two or more metal films are alternately laminated with the dielectric film. It goes without saying that the high-frequency circuit electrode of the present invention can be composed of any number of layers.

In the first to tenth embodiments, the metal film is mainly separated by the dielectric film. However, even if the dielectric film portion is an air layer, that is, a cavity, the metal film is separated. If there is a similar effect.

Further, in the first to tenth embodiments, the structure in which the connecting conductor is mainly provided in only a part of the end portion of the metal film is shown. However, as in the third embodiment, it is provided in all parts of the side surface end portion of the metal film. You may provide a connection conductor and may connect several metal films.

Further, in the first to tenth embodiments, even in the structure in which only a part of the plurality of metal films is connected by the connecting conductor, the metal film which is not connected is coupled by the electromagnetic field through the dielectric film. A similar effect is obtained because the current is distributed.

Furthermore, in Examples 1 to 10, the grounding conductor portion was mainly composed of a single-layer metal film, but the grounding conductor also has a similar structure in which metal films and dielectric films are alternately laminated. As a result, it is possible to further reduce the loss.

Further, the contents disclosed in the respective embodiments can be easily combined as appropriate.

[0074]

As described above, according to the present invention, an electrode having a structure in which a plurality of metal films and dielectric films are alternately laminated and a connection conductor for connecting the plurality of metal films is provided, Is distributed to each conductor film, the skin effect can be mitigated and the loss of the entire electrode can be reduced. Further, by using the high-frequency circuit electrode of the present invention as an electrode of the resonator, a resonator having a high unloaded Q can be constructed. Further, by using the high-frequency circuit electrode of the present invention as an electrode of a transmission line, a transmission line with a small transmission loss can be constructed. In addition,
By applying the high-frequency circuit electrode of the present invention to the electrode of the ground portion, a high-frequency circuit with even lower loss can be realized.

[Brief description of drawings]

FIG. 1A is a cross-sectional view showing a configuration of a transmission line using a high-frequency circuit electrode according to a first embodiment of the present invention. FIG.

FIG. 2 (a) is a cross-sectional view showing a configuration of a transmission line using a high-frequency circuit electrode according to a second embodiment of the present invention.

FIG. 3 (a) is a sectional view showing a configuration of a transmission line using a high frequency circuit electrode according to a third embodiment of the present invention.

FIG. 4 (a) is a sectional view showing the structure of a transmission line utilizing a high frequency circuit electrode in a fourth embodiment of the present invention.

FIG. 5 is an assembled perspective view of a high frequency circuit electrode according to a fifth embodiment of the present invention.

FIG. 6 (a) is a perspective view of a transmission line using a high frequency circuit electrode according to a sixth embodiment of the present invention (b) is a sectional view of the same.

FIG. 7 (a) is a perspective view of a transmission line using a high frequency circuit electrode according to a seventh embodiment of the present invention. FIG.

FIG. 8A is a perspective view of a transmission line using an electrode for a high frequency circuit according to an eighth embodiment of the present invention. FIG. 8B is a sectional view thereof. FIG. 8C is a perspective view thereof.

FIG. 9 (a) is a perspective view of a coaxial type transmission line using a high frequency circuit electrode according to a ninth embodiment of the present invention (b) is a sectional view thereof

FIG. 10 (a) is a perspective view of a dielectric coaxial resonator using a high frequency circuit electrode according to a tenth embodiment of the present invention. FIG.

FIG. 11 is a perspective view showing a conventional transmission line using electrodes.

[Explanation of symbols]

11, 12, 13, 14, 15, 101 Metal film 21, 22, 23 Dielectric film 31, 32, 33, 34, 35, 36, 37, 38, 3
9 connection conductor 41 dielectric block 42, 104 dielectric substrate 43 coaxial dielectric 52, 105 grounding conductor 61, 62, 63 through hole

Front page continuation (72) Inventor Mitsuo Makimoto 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (24)

[Claims] 1. A plurality of metal films formed on a dielectric, a plurality of metal films are separated from each other, and a plurality of metal films are laminated alternately with the metal films. An electrode for a high-frequency circuit, which comprises a connection conductor for electrically connecting. 2. The electrode for a high frequency circuit according to claim 1, wherein the connection conductor is provided at all end portions of a peripheral portion of the metal film. 3. The high-frequency circuit electrode according to claim 1, wherein the connection conductor is provided at an end portion of the peripheral portion of the metal film, which is connected to an external circuit. 4. The high frequency circuit electrode according to claim 1, wherein the connection conductor is provided inside the metal film. 5. The high frequency circuit electrode according to claim 1, wherein the connection conductor is a through hole. 6. The high frequency circuit electrode according to claim 1, wherein the connection conductor is formed by wire bonding. 7. The high frequency circuit electrode according to claim 1, wherein the connection conductor is a ribbon. 8. The high-frequency circuit electrode according to claim 1, wherein the connecting conductor is an air bridge. 9. The electrode for a high frequency circuit according to claim 1, wherein the connection conductor connects only a part of the plurality of metal films. 10. The high frequency circuit electrode according to claim 1, wherein the connection conductor connects all of the plurality of metal films. 11. The metal film and the dielectric film have a laminated structure in which the entire surfaces of the films are overlapped with each other.
10. The electrode for a high frequency circuit according to any one of items 10 to 10. 12. The high frequency circuit electrode according to claim 1, wherein the metal film and the dielectric film have a laminated structure in which only a part of the surface of the film overlaps. 13. The high frequency circuit electrode according to claim 1, wherein the dielectric film is air or vacuum. 14. A dielectric substrate having electrodes mounted thereon,
The metal film and the dielectric film have a laminated structure on the dielectric substrate such that they overlap each other in a film pressure direction perpendicular to the surface of the dielectric substrate. The high-frequency circuit electrode according to. 15. A dielectric substrate on which electrodes are mounted, and a groove formed on the surface of the dielectric substrate, wherein the metal film and the dielectric film have a laminated structure in which they overlap each other inside the groove. The electrode for a high frequency circuit according to any one of claims 1 to 13. 16. The electrode for a high frequency circuit according to claim 15, wherein the cross section of the groove is a U-shaped curve. 17. A dielectric substrate on which electrodes are mounted,
The metal film and the dielectric film are mounted such that the surfaces of the metal film and the dielectric film are perpendicular to the surface of the dielectric substrate and are parallel to the surface of the dielectric substrate. The electrode for a high frequency circuit according to any one of claims 1 to 13, wherein the electrode has a laminated structure in which the electrodes overlap in the pressure direction. 18. A dielectric substrate having electrodes mounted thereon,
14. The metal film and the dielectric film are arranged side by side on the surface of the dielectric substrate, and the metal film and the dielectric film are in contact with each other on the side surface thereof. High frequency circuit electrode. 19. A dielectric substrate having electrodes mounted thereon,
The high frequency circuit electrode according to any one of claims 1 to 13, wherein the metal film and the dielectric film have a laminated structure in which they are concentrically overlapped on the surface of the dielectric substrate. 20. The electrode for a high frequency circuit according to claim 14, wherein the dielectric substrate is replaced with a dielectric block. 21. A transmission line for transmitting a high-frequency signal, which is formed on a dielectric, and a ground conductor are provided, and only one of the transmission line and the ground conductor is provided. A high-frequency transmission line characterized by being provided with electrodes for a high-frequency circuit. 22. A high-frequency circuit according to claim 14, further comprising a transmission line formed on a dielectric for transmitting a high-frequency signal and a ground conductor, both of which being the transmission line and the ground conductor. A high-frequency transmission line characterized by having electrodes. 23. A high frequency circuit electrode according to claim 14, comprising a resonance conductor and a ground conductor formed on a dielectric, and only one of the resonance conductor and the ground conductor. A high-frequency resonator characterized by being applied. 24. A resonance conductor and a ground conductor formed on a dielectric material are provided, and the high-frequency circuit electrode according to claim 14 is applied to both the resonance conductor and the ground conductor. High-frequency resonator characterized by.