JPH0989961A - Electric field detecting device - Google Patents

Electric field detecting device

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Publication number
JPH0989961A
JPH0989961A JP7273448A JP27344895A JPH0989961A JP H0989961 A JPH0989961 A JP H0989961A JP 7273448 A JP7273448 A JP 7273448A JP 27344895 A JP27344895 A JP 27344895A JP H0989961 A JPH0989961 A JP H0989961A
Authority
JP
Japan
Prior art keywords
electric field
optical waveguide
optical
light
phase shift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7273448A
Other languages
Japanese (ja)
Inventor
Yuichi Togano
祐一 戸叶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP7273448A priority Critical patent/JPH0989961A/en
Publication of JPH0989961A publication Critical patent/JPH0989961A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To detect a high electric field by forming a plurality of phase shifting optical waveguides in the Z-axial direction of the crystalline axis of an electrochemical crystal plate to enhance the half-wavelength electric field. SOLUTION: The light from a light source 6 passed through a single mode fiber 6 is incident on a sensor head 1. The head 1 is formed of an optical waveguide for propagating the light in the Z-axial direction by use of an X-plate 11 and a modulating electrode 15, the incident light from an incident optical waveguide 12 is passed through two phase shift optical waveguides 13, recombined in an emitting optical waveguide 14, and emitted to a fiber 7. With the result that a voltage guided to an antenna 60 by electric field is applied to a pair of demodulating electrodes 15 near the phase shift optical waveguides 13 to change the phase of the light passed through the phase shift optical waveguides 13, the guided lights bonded in the emitting optical waveguide 14 are mutually interfered, passed through the fiber 7, and incident on a light detector 63, and the light intensity is converted into electric signal, and measured and displayed by a measuring instrument 64. The head 1, which is of polarization independent type independent from polarizing surface, requires no polarizing regulation, and is functioned by a single mode fiber 6.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、放射電磁波等の電
界強度、特に、静電界、又は比較的低い周波数帯域の電
界を検出する装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device for detecting the electric field strength of radiated electromagnetic waves and the like, especially the electrostatic field or the electric field in a relatively low frequency band.

【0002】[0002]

【従来の技術】送配電線を含む電力設備の保守・状態監
視のために、電界検出は必須である。近年、この分野に
おいては、電気光学効果を利用した電界検出が実用化さ
れ、効を奏している。
2. Description of the Related Art Electric field detection is essential for maintenance and condition monitoring of electric power equipment including transmission and distribution lines. In recent years, in this field, electric field detection utilizing the electro-optic effect has been put into practical use and is effective.

【0003】図7は、従来技術による電界検出装置の構
成を示す図である。図7において、センサヘッド4に入
射した光は、電界によってアンテナ60に誘導され、セ
ンサヘッド4に導かれた電圧を印加することによって変
調され、その出射光強度を計測し、電界強度を検出する
ことができる。
FIG. 7 is a diagram showing the structure of a conventional electric field detecting device. In FIG. 7, the light incident on the sensor head 4 is guided to the antenna 60 by the electric field, modulated by applying the voltage guided to the sensor head 4, and the emitted light intensity is measured to detect the electric field intensity. be able to.

【0004】図8は、図7に示した電界検出装置に用い
たセンサヘッドの概要を示す図である。センサヘッド4
は、ニオブ酸リチウム等、電気光学効果を示す基板41
上に形成した光導波路素子からなる。広帯域の周波数特
性を確保する必要から、従来、基板の法線を結晶軸のX
軸(以下、X板)とする、又は、法線をZ軸(以下、Z
板)とする基板が用いられた。かつ、Z軸方向に電圧を
印加すると、電気光学効果が高いため、X板の基板の場
合は、光導波路をY軸方向に、Z板の基板の場合はX軸
方向、又はY軸方向にとることが望ましく、センサヘッ
ドの多くは、これに沿って製作、使用されてきた。この
場合、焦電効果による温度特性の劣化を防ぐため、基板
表面に導電性の膜を設けていた。
FIG. 8 is a diagram showing an outline of a sensor head used in the electric field detecting device shown in FIG. Sensor head 4
Is a substrate 41 that exhibits an electro-optical effect, such as lithium niobate.
It consists of the optical waveguide element formed on the above. Conventionally, the normal line of the substrate has been set to the X
The axis (hereinafter, X plate) or the normal is the Z axis (hereinafter, Z plate)
A substrate to be used as a plate was used. In addition, when a voltage is applied in the Z-axis direction, the electro-optical effect is high, so in the case of the X-plate substrate, the optical waveguide is in the Y-axis direction, and in the case of the Z-plate substrate, the X-axis direction or the Y-axis direction. It is desirable to take, and many of the sensor heads have been manufactured and used accordingly. In this case, a conductive film is provided on the surface of the substrate in order to prevent deterioration of temperature characteristics due to the pyroelectric effect.

【0005】この方式による電界検出装置は、信号伝送
路として、光ファイバを用いるため、伝送損失が小さ
く、長距離伝送が可能であるのみならず、光ファイバと
環境との間のノイズの授受がないこと等の特徴を有す
る。
Since the electric field detecting device according to this method uses the optical fiber as the signal transmission line, not only the transmission loss is small and long-distance transmission is possible, but also the transmission and reception of noise between the optical fiber and the environment. There are features such as not being

【0006】[0006]

【発明が解決しようとする課題】しかしながら、前記電
界検出損失には、以下に述べるいくつかの短所がある。
However, the electric field detection loss has some disadvantages described below.

【0007】まず、第一に、前記導電性膜が電極間に存
在することにより、特に、電力分野で必要とされる低周
波域での特性劣化を招くことである。第二に、センサヘ
ッド4の特性の一つである半波長電圧(以下、Vπ)が
2ボルト(V)程度で、高電界の検出には制約が生じ
る。第三に、センサヘッド4の入射光が、TE偏波の場
合とTM偏波の場合で、センサヘッド4の変調特性が相
違し、そのため、入射光の偏光を規定することが余儀な
くされる。そのため、光源61の出射端付近に波長板等
による偏光調整手段62を付加し、更に、センサヘッド
4の入力光ファイバには、偏波面保持ファイバ46の使
用が必要となる。このため、電界検出装置の組立調整に
偏光面調整操作を要し、加えて、偏波面保持ファイバ4
6の使用によるコスト高騰を招く。前述したように、長
距離伝送の実現に伴い、遠隔地における電界検出の実施
の場合には、受ける経済的不利益は大きい。又、センサ
ヘッドの入射光導波路の端面に偏光分離器を配置して、
偏光を分離して入射する方法も可能である。しかし、こ
の場合、光損失が増加し、又、ファイバにかかる応力に
よる出力変動があり、問題の解決にはならない。
First, the presence of the conductive film between the electrodes causes deterioration of characteristics particularly in the low frequency region required in the electric power field. Second, the half-wavelength voltage (hereinafter, Vπ), which is one of the characteristics of the sensor head 4, is about 2 volts (V), which limits the detection of a high electric field. Thirdly, the modulation characteristics of the sensor head 4 are different depending on whether the incident light of the sensor head 4 is TE polarized light or TM polarized light, so that it is unavoidable to define the polarization of the incident light. Therefore, it is necessary to add polarization adjusting means 62 such as a wavelength plate near the emission end of the light source 61, and to use the polarization plane holding fiber 46 as the input optical fiber of the sensor head 4. Therefore, a polarization plane adjusting operation is required for the assembly adjustment of the electric field detecting device, and in addition,
The use of 6 causes a cost increase. As described above, with the realization of long-distance transmission, in the case of performing electric field detection in a remote place, the economic disadvantages are large. Also, a polarization separator is placed on the end face of the incident optical waveguide of the sensor head,
A method of separating the polarized light and making it incident is also possible. However, in this case, the optical loss increases and the output varies due to the stress applied to the fiber, which cannot solve the problem.

【0008】本発明は、従来技術による前述の電界検出
装置の短所を補い、即ち、半波長電界Vπを高めること
によって、高電界の検出を可能にすると共に、入射光の
偏波に依存することなく、従って、偏光調整手段を要せ
ず、コスト高騰のもととなる偏波保持ファイバに代え
て、シングルモードファイバを用いた電界検出装置を提
供する。
The present invention makes it possible to detect a high electric field by compensating for the disadvantages of the above-mentioned electric field detecting device according to the prior art, that is, by increasing the half-wave electric field Vπ, and to depend on the polarization of incident light. Therefore, an electric field detecting device using a single mode fiber is provided instead of the polarization maintaining fiber, which does not require polarization adjusting means and causes a cost increase.

【0009】[0009]

【課題を解決するための手段】前述の課題を解決するた
めに、本発明は、電気光学結晶基板上に形成した入射光
導波路、入射光導波路から分岐した二つの位相シフト光
導波路、二つの位相シフト光導波路が再び結合した出射
光導波路、二つの位相シフト光導波路の近傍に対をなし
て形成した変調電極、及び変調電極に接続されたアンテ
ナ部からなり、電界によってアンテナ部に誘導され、変
調電極に印加された電圧に依存して、光導波路を通った
出射光の強度を変化するセンサヘッドと、センサヘッド
に接続した入力光ファイバ及び出力光ファイバと、入力
光ファイバの他の一端に接続した光源と、出力光ファイ
バの他の一端に接続した光検出器、及び該光検出器の出
力を入力とする計測器とから構成した電界検出装置にお
いて、二つの位相シフト光導波路を電気光学結晶基板の
結晶軸のZ軸方向に形成した電界検出装置を提供する。
In order to solve the above problems, the present invention provides an incident optical waveguide formed on an electro-optic crystal substrate, two phase shift optical waveguides branched from the incident optical waveguide, and two phase shift optical waveguides. The shift optical waveguide consists of the re-coupled output optical waveguide, the modulation electrodes formed in pairs near the two phase shift optical waveguides, and the antenna section connected to the modulation electrode. A sensor head that changes the intensity of light emitted through the optical waveguide depending on the voltage applied to the electrode, an input optical fiber and an output optical fiber connected to the sensor head, and the other end of the input optical fiber In the electric field detecting device comprising a light source, a photodetector connected to the other end of the output optical fiber, and a measuring instrument having the output of the photodetector as an input, two phases are provided. To provide a field detecting device forming the shift optical waveguides in the Z-axis direction of the crystal axis of the electro-optical crystal substrate.

【0010】又、本発明は、入力光ファイバがシングル
モードファイバでも、同様の機能を有する電界検出装置
が得られることを示す。
The present invention also shows that even if the input optical fiber is a single mode fiber, an electric field detecting device having a similar function can be obtained.

【0011】又、本発明は、電気光学結晶基板上に形成
した光導波路、光導波路から分岐した二つの位相シフト
光導波路、二つの位相シフト光導波路の他の端部に配置
した光反射部、二つの位相シフト光導波路の近傍に対を
なして形成した変調電極、及び変調電極に接続されたア
ンテナ部からなり、電界によってアンテナ部に誘導さ
れ、変調電極に印加された電圧に依存して、光導波路を
通った光の強度を変化するセンサヘッドと、センサヘッ
ドに接続した光ファイバと、光ファイバの他の一端に接
続した光サーキュレータつき光源と、光サーキュレータ
の出力端に接続した光ファイバと、光ファイバの他の一
端に接続した光検出器、及び光検出器の出力を入力とす
る計測器から構成した電界検出装置において、二つの位
相シフト光導波路を電気光学結晶基板の結晶軸のZ軸方
向に形成した電界検出装置を提供する。
Further, according to the present invention, an optical waveguide formed on an electro-optic crystal substrate, two phase shift optical waveguides branched from the optical waveguide, a light reflecting portion arranged at the other end of the two phase shift optical waveguides, It consists of a pair of modulation electrodes formed in the vicinity of the two phase shift optical waveguides, and an antenna part connected to the modulation electrode, which is induced in the antenna part by an electric field and depends on the voltage applied to the modulation electrode. A sensor head that changes the intensity of light passing through the optical waveguide, an optical fiber connected to the sensor head, a light source with an optical circulator connected to the other end of the optical fiber, and an optical fiber connected to the output end of the optical circulator. In the electric field detection device composed of a photodetector connected to the other end of the optical fiber and a measuring instrument having the output of the photodetector as an input, two phase shift optical waveguides are provided. To provide a field detecting device formed on the Z-axis direction of the crystal axis of the gas-optical crystal substrate.

【0012】この場合においても、本発明は、センサヘ
ッドに接続した光ファイバがシングルモードファイバで
も、同様の機能を有する電界検出装置が得られることを
示す。
Even in this case, the present invention shows that an electric field detecting device having a similar function can be obtained even if the optical fiber connected to the sensor head is a single mode fiber.

【0013】更に、本発明の作用効果について、以下に
説明する。まず、本発明においては、Z軸に平行に電極
が設置されるので、導電性膜を設置しなくても、温度に
対して安定な特性が得られ、低周波特性が劣化しない。
Further, the function and effect of the present invention will be described below. First, in the present invention, since the electrodes are installed parallel to the Z axis, stable characteristics with respect to temperature can be obtained and low frequency characteristics do not deteriorate even if a conductive film is not installed.

【0014】次に、センサヘッドの偏波依存性について
述べる。図9は、X板の基板上でY軸方向に形成した光
導波路素子からなる従来技術によるセンサヘッドの場合
の入射波がTE波及びTM波について、出射光強度の印
加電圧に対する依存性を示す図である。図10は、X板
の基板上でZ軸方向に形成した光導波路素子からなる本
発明によるセンサヘッドの場合の入射波がTE波及びT
M波について、出射光強度の印加電圧に対する依存性を
示す図である。
Next, the polarization dependence of the sensor head will be described. FIG. 9 shows the dependence of the intensity of emitted light on the applied voltage for the TE wave and the TM wave in the case of a sensor head according to the related art, which includes an optical waveguide element formed in the Y-axis direction on a substrate of an X plate. It is a figure. FIG. 10 shows that the incident wave in the case of the sensor head according to the present invention, which is composed of the optical waveguide element formed in the Z-axis direction on the substrate of the X plate, is TE wave and T wave.
It is a figure which shows the dependence with respect to the applied voltage of the emitted light intensity about M wave.

【0015】従来技術によるセンサヘッド4の場合、入
射光の偏波に依存して変調される。従って、従来技術に
よる電界検出装置においては、図7に示すように、入射
波の偏波を特定する必要から、光源の出射光を偏光調整
手段62によって規定すると共に、偏光調整手段62か
らセンサヘッド4までの光伝送路として偏波保持ファイ
バ46を使うことが余儀なくされる。
In the case of the sensor head 4 according to the prior art, modulation is performed depending on the polarization of incident light. Therefore, in the electric field detecting device according to the prior art, as shown in FIG. 7, it is necessary to specify the polarization of the incident wave, so that the emitted light of the light source is defined by the polarization adjusting means 62, and the polarization adjusting means 62 causes the sensor head to detect. It is unavoidable to use the polarization maintaining fiber 46 as the optical transmission line up to 4.

【0016】又、図10から、X板の基板上でZ軸方向
に形成した光導波路素子からなるセンサヘッドの場合、
変調特性は、入射光の偏波に依存しないことを示してい
る。従って、この場合は、光源とセンサヘッドの間の伝
送路には、偏光調整手段は必要なく、又、シングルモー
ドファイバを使うことが可能となる。
Further, from FIG. 10, in the case of a sensor head composed of an optical waveguide element formed in the Z-axis direction on an X-plate substrate,
It shows that the modulation characteristic does not depend on the polarization of the incident light. Therefore, in this case, no polarization adjusting means is required in the transmission line between the light source and the sensor head, and a single mode fiber can be used.

【0017】更に、半波長電圧Vπは、X板の基板上
で、Y軸方向に電界を印加した場合には、Z軸方向の場
合に比べて、約9倍となる。前者は従来技術、後者は本
発明によるセンサヘッドが、それぞれ対応する。このこ
とは、後者は高電界の検出に、前者は微小電界に使うこ
とが、それぞれ好ましいことを示す。
Further, the half-wave voltage Vπ is about 9 times higher when an electric field is applied in the Y-axis direction on the X-plate substrate than in the Z-axis direction. The former corresponds to the related art, and the latter corresponds to the sensor head according to the present invention. This indicates that the latter is preferably used for detecting a high electric field and the former is preferably used for a minute electric field.

【0018】更に、本発明におけるセンサヘッドは、低
い周波数帯域で良好な特性を示すこともあり、基板上で
Z軸方向に光導波路を形成したセンサヘッドは、静電界
を含む比較的低い周波数帯域で、かつ、高電界を検出す
る装置に用いることによって、その特徴が生かされるも
のとなる。
Further, the sensor head according to the present invention may exhibit good characteristics in a low frequency band, and a sensor head having an optical waveguide formed in the Z-axis direction on a substrate has a relatively low frequency band including an electrostatic field. In addition, by using it in a device that detects a high electric field, its characteristics can be utilized.

【0019】[0019]

【発明の実施の形態】以下に、本発明の実施の形態を実
施例によって詳細に説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to examples.

【0020】(実施例1)図1は、本発明の一実施例で
ある電界検出装置の構成図を示す。図2は、図1におけ
るセンサヘッドの構成を示す図である。
(Embodiment 1) FIG. 1 is a block diagram of an electric field detecting device according to an embodiment of the present invention. FIG. 2 is a diagram showing a configuration of the sensor head in FIG.

【0021】光源61からシングルモードファイバ6を
通った光が、センサヘッド1に入射する。図2に示す光
センサヘッド1には、ニオブ酸リチウムのX板の基板1
1を用い、Z軸方向に光が伝搬する光導波路と変調電極
15から構成されている。入射光は、入射光導波路12
から分岐した二つの位相シフト光導波路13を通り、出
射光導波路14で再び結合して、シングルモードファイ
バ7に出射される。ここで、二つの位相シフト光導波路
の近傍に配置した一対の変調電極15には、電界によっ
てアンテナ60に誘導された電圧が印加され、この近傍
の位相シフト光導波路13を通る光の位相が変化する。
その結果、出射光導波路14で結合した二つの導波光
は、相互に干渉し、シングルモードファイバ7を通っ
て、光検出器63に入射して、出射光強度は電気信号に
変換され、ついで、測定器64によって、測定・表示
等、処理される。
The light that has passed through the single mode fiber 6 from the light source 61 enters the sensor head 1. The optical sensor head 1 shown in FIG. 2 includes an X plate substrate 1 of lithium niobate.
1 and is composed of a modulation electrode 15 and an optical waveguide through which light propagates in the Z-axis direction. The incident light is the incident optical waveguide 12
After passing through the two phase-shifting optical waveguides 13 branched from the above, they are coupled again by the emitting optical waveguide 14 and emitted to the single mode fiber 7. Here, a voltage induced in the antenna 60 by an electric field is applied to the pair of modulation electrodes 15 arranged in the vicinity of the two phase shift optical waveguides, and the phase of light passing through the phase shift optical waveguides 13 in the vicinity changes. To do.
As a result, the two guided lights coupled by the outgoing optical waveguide 14 interfere with each other, pass through the single mode fiber 7 and enter the photodetector 63, and the outgoing light intensity is converted into an electric signal. The measuring device 64 performs processing such as measurement and display.

【0022】本実施例においては、センサヘッド1は、
偏波面に依存しない、いわゆる、偏光無依存型で、偏光
調整手段が不要である、偏波保持ファイバ46に代わっ
て、シングルモードファイバ6を使うことによって、十
分に機能する。
In this embodiment, the sensor head 1 is
By using the single mode fiber 6 instead of the polarization maintaining fiber 46, which is a so-called polarization independent type which does not depend on the plane of polarization and which does not require a polarization adjusting means, it functions sufficiently.

【0023】なお、従来技術による、例えば、図7に示
す電界検出装置の構成において、センサヘッド4の代わ
りに、本実施例に用いた入射光の偏波に依存しないセン
サヘッド1を使うことも可能であることは当然である。
Note that, in the structure of the electric field detecting device shown in FIG. 7, for example, according to the prior art, the sensor head 4 may be replaced by the sensor head 1 which does not depend on the polarization of the incident light used in this embodiment. Of course it is possible.

【0024】(実施例2)図3は、本発明の他の実施例
である電界検出装置の構成図を示す。図4は、図3にお
けるセンサヘッドの構成を示す図である。
(Embodiment 2) FIG. 3 is a block diagram of an electric field detecting device according to another embodiment of the present invention. FIG. 4 is a diagram showing the configuration of the sensor head in FIG.

【0025】図4において、センサヘッド2は、前記実
施例1の場合と同様に、X板のニオブ酸リチウムの基板
21を用い、その基板21上にZ軸方向に光が伝搬する
二つの位相シフト光導波路23と、そのうちの一方をは
さむ変調電極25が形成されている。アンテナエレメン
トは、変調電極25と一体となっている。従って、本実
施例による電界検出装置は、いわゆる、外づけ方式のア
ンテナはない。前述の実施例1の電界検出装置より検出
感度が低いものの、小型であるため、狭い空間の高電界
を検出するために有利である。
In FIG. 4, the sensor head 2 uses a substrate 21 of lithium niobate, which is an X plate, as in the case of the first embodiment, and two phases on which light propagates in the Z-axis direction. A shift optical waveguide 23 and a modulation electrode 25 sandwiching one of them are formed. The antenna element is integrated with the modulation electrode 25. Therefore, the electric field detecting device according to the present embodiment does not have a so-called external antenna. Although the detection sensitivity is lower than that of the electric field detection device according to the first embodiment described above, it is advantageous in that it can detect a high electric field in a narrow space because of its small size.

【0026】(実施例3)図5は、本発明の他の実施例
である電界検出装置の構成図を示す。図6は、図5にお
けるセンサヘッドの構成を示す図である。
(Embodiment 3) FIG. 5 is a block diagram of an electric field detecting device according to another embodiment of the present invention. FIG. 6 is a diagram showing the configuration of the sensor head in FIG.

【0027】本実施例の電界検出装置は、いわゆる、反
射型センサヘッド3を使ったことに特徴がある。X板の
ニオブ酸リチウムの基板31を用い、その基板31上に
Z軸方向に光が伝搬する光導波路と、これをはさむ変調
電極35が形成され、又、位相シフト光導波路33の一
方の端には、反射部37を配置してある。光は反射部3
7で反射し、折り返して再び入射してきた経路を戻る。
二つの位相シフト光導波路33の近傍に配置した変調電
極35には、電界によってアンテナ60に誘導された電
圧が印加され、位相シフト光導波路33を通る光の位相
が変化する。その結果、光導波路32で結合した二つの
導波光は、相互に干渉し、シングルモードファイバ8を
通り、光サーキュレータ65を経由して、光検出器63
に入射し、以降は、前記実施例と同様に、出射光強度は
電気信号に変換され、ついで、測定器64によって、測
定・表示等、処理される。
The electric field detection device of this embodiment is characterized in that a so-called reflective sensor head 3 is used. An X-plate lithium niobate substrate 31 is used, an optical waveguide for propagating light in the Z-axis direction and a modulation electrode 35 sandwiching the optical waveguide are formed on the substrate 31, and one end of the phase shift optical waveguide 33 is formed. A reflecting portion 37 is arranged in the. Light is a reflection part 3
It reflects at 7, returns, and returns to the path that has been incident again.
A voltage induced in the antenna 60 by an electric field is applied to the modulation electrode 35 arranged near the two phase shift optical waveguides 33, and the phase of light passing through the phase shift optical waveguides 33 changes. As a result, the two guided lights coupled by the optical waveguide 32 interfere with each other, pass through the single mode fiber 8, pass through the optical circulator 65, and pass through the photodetector 63.
After that, the intensity of the emitted light is converted into an electric signal, and then measured and displayed by the measuring device 64, as in the above embodiment.

【0028】本実施例の場合、光は、位相シフト光導波
路33の往路及び復路の両過程で変調を受けるため、前
述の実施例1に示す、いわゆる透過型センサヘッドより
も小型になり、又、半波長電圧Vπが、約1/2とな
る。そのため、検出電界に応じてセンサヘッドを透過型
又は反射型に選択することができる。又、センサヘッド
3の光の入射及び出射が、1本の光ファイバで行われる
ため、操作の煩雑さが低減すると共に、安価な電界検出
装置を実現するために、その意義は大きい。
In the case of the present embodiment, the light undergoes modulation in both the forward path and the backward path of the phase shift optical waveguide 33, so it becomes smaller than the so-called transmissive sensor head shown in the first embodiment, and , The half-wave voltage Vπ becomes about 1/2. Therefore, the sensor head can be selected as a transmissive type or a reflective type according to the detected electric field. In addition, since the light entering and exiting the sensor head 3 is performed by one optical fiber, the complexity of the operation is reduced, and its significance is significant in order to realize an inexpensive electric field detection device.

【0029】なお、反射型のセンサヘッドの場合でも、
前述の実施例2のように、アンテナエレメントを変調電
極と一体にして基板上に形成し、小型にすることができ
ることは、いうまでもない。
Even in the case of a reflection type sensor head,
Needless to say, the antenna element can be formed on the substrate integrally with the modulation electrode to reduce the size, as in the second embodiment.

【0030】[0030]

【発明の効果】本発明は、従来技術による前記電界検出
装置の短所を補った電界検出装置を実現した。即ち、本
発明には、導電性膜を設置しなくても、温度に対して安
定な特性が得られ、低周波特性が劣化せず、半波長電圧
Vπを高めることによって、高電界の検出が可能な、更
に、入射光の偏波に依存することがないセンサヘッドを
採用した。これによって、偏光調整手段を要せず、コス
ト高騰のもととなる偏波保持ファイバに代えて、シング
ルモードファイバを用いた電界検出装置を実現した。
The present invention has realized an electric field detecting device which compensates for the disadvantages of the electric field detecting device according to the prior art. That is, according to the present invention, even if a conductive film is not provided, stable characteristics with respect to temperature can be obtained, low frequency characteristics are not deteriorated, and high electric field can be detected by increasing the half-wave voltage Vπ. A sensor head that is possible and does not depend on the polarization of the incident light is used. As a result, an electric field detecting device using a single-mode fiber instead of the polarization-maintaining fiber, which causes a cost increase, without requiring polarization adjusting means has been realized.

【0031】以上、説明したように、本発明の電界検出
装置は、信号伝送路として光ファイバを用いるため、伝
送損失が小さく、長距離伝送が可能であるのみならず、
光ファイバと環境との間のノイズの授受がないこと等、
従来の電界検出装置の特徴をそのまま受け継いでいる。
本発明は、高電界検出を可能にすると共に、光源からセ
ンサヘッドまでの光伝送路が、シングルモードファイバ
でも十分であることを示し、コスト低減に寄与した。遠
隔地の電界検出の場合には、ことさら大きな経済効果と
してあらわれる。
As described above, since the electric field detecting device of the present invention uses the optical fiber as the signal transmission line, not only the transmission loss is small and long-distance transmission is possible,
There is no exchange of noise between the optical fiber and the environment,
It inherits the features of conventional electric field detectors.
The present invention enables high electric field detection and shows that a single mode fiber is sufficient for the optical transmission line from the light source to the sensor head, thus contributing to cost reduction. In the case of electric field detection at a remote place, it has a particularly great economic effect.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例1に説明した電界検出装置の構
成図。
FIG. 1 is a configuration diagram of an electric field detection device described in a first embodiment of the present invention.

【図2】図1におけるセンサヘッドの構成図。FIG. 2 is a configuration diagram of a sensor head in FIG.

【図3】本発明の実施例2に説明した電界検出装置の構
成図。
FIG. 3 is a configuration diagram of an electric field detection device described in a second embodiment of the present invention.

【図4】図3におけるセンサヘッドの構成図。FIG. 4 is a configuration diagram of the sensor head in FIG.

【図5】本発明の実施例3に説明した電界検出装置の構
成図。
FIG. 5 is a configuration diagram of an electric field detection device described in a third embodiment of the present invention.

【図6】図5におけるセンサヘッドの構成図。FIG. 6 is a configuration diagram of the sensor head in FIG.

【図7】従来技術による電界検出装置の構成図。FIG. 7 is a configuration diagram of an electric field detection device according to a conventional technique.

【図8】従来技術によるセンサヘッドの概要図。FIG. 8 is a schematic view of a sensor head according to a conventional technique.

【図9】X板の基板上でY軸方向に形成した光導波路素
子からなるセンサヘッドの場合の入射波がTE波及びT
M波について、出射光強度の印加電圧に対する依存性を
示す図。
FIG. 9 shows TE waves and T waves that are incident waves in the case of a sensor head including an optical waveguide device formed in the Y axis direction on an X plate substrate.
The figure which shows the dependence with respect to the applied voltage of the emitted light intensity about M wave.

【図10】X板の基板上でZ軸方向に形成した光導波路
素子からなるセンサヘッドの場合の入射波がTE波及び
TM波について、出射光強度の印加電圧に対する依存性
を示す図。
FIG. 10 is a diagram showing the dependence of the intensity of emitted light on the applied voltage with respect to TE waves and TM waves of incident waves in the case of a sensor head including an optical waveguide element formed in the Z-axis direction on a substrate of an X plate.

【符号の説明】[Explanation of symbols]

1,2,3,4 センサヘッド 6,7,8,9,10 シングルモードファイバ 11,21,31,41 基板 12,22,42 入射光導波路 13,23,33,43 位相シフト光導波路 14,24,44 出射光導波路 15,25,35,45 変調電極 32 光導波路 37 反射部 46 偏波保持ファイバ 60 アンテナ 61 光源 62 偏波調整手段 63 光検出器 64 測定器 65 光サーキュレータ 66,67 導線 1,2,3,4 Sensor head 6,7,8,9,10 Single mode fiber 11,21,31,41 Substrate 12,22,42 Incident optical waveguide 13,23,33,43 Phase shift optical waveguide 14, 24, 44 Output optical waveguide 15, 25, 35, 45 Modulation electrode 32 Optical waveguide 37 Reflector 46 Polarization maintaining fiber 60 Antenna 61 Light source 62 Polarization adjusting means 63 Photodetector 64 Measuring instrument 65 Optical circulator 66, 67 Conductor

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 電気光学結晶基板上に形成した入射光導
波路、該入射光導波路から分岐した二つの位相シフト光
導波路、該二つの位相シフト光導波路が再び結合した出
射光導波路、前記二つの位相シフト光導波路の近傍に対
をなして形成した変調電極、及び該変調電極に接続され
たアンテナ部からなり、電界によって前記アンテナ部に
誘導され、前記変調電極に印加された電圧に依存して、
前記光導波路を通った出射光の強度を変調するセンサヘ
ッドと、該センサヘッドに接続した入力光ファイバ及び
出力光ファイバと、前記入力光ファイバの他の一端に接
続した光源と、前記出力光ファイバの他の一端に接続し
た光検出器と、該光検出器の出力を入力とする計測器と
から構成した電界検出装置において、前記二つの位相シ
フト光導波路を前記電気光学結晶基板のZ軸方向に形成
したことを特徴とする電界検出装置。
1. An incident optical waveguide formed on an electro-optic crystal substrate, two phase shift optical waveguides branched from the incident optical waveguide, an outgoing optical waveguide in which the two phase shift optical waveguides are recombined, and the two phases. A modulation electrode formed in a pair near the shift optical waveguide, and an antenna part connected to the modulation electrode, which is guided to the antenna part by an electric field and depends on the voltage applied to the modulation electrode,
A sensor head for modulating the intensity of outgoing light passing through the optical waveguide, an input optical fiber and an output optical fiber connected to the sensor head, a light source connected to the other end of the input optical fiber, and the output optical fiber In an electric field detecting device comprising a photodetector connected to the other end of the photodetector and a measuring instrument using the output of the photodetector as an input, the two phase shift optical waveguides are provided in the Z-axis direction of the electro-optic crystal substrate. An electric field detecting device characterized in that
【請求項2】 請求項1記載の入力光ファイバが、シン
グルモードファイバであることを特徴とする電界検出装
置。
2. The electric field detecting device according to claim 1, wherein the input optical fiber is a single mode fiber.
【請求項3】 電気光学結晶基板上に形成した光導波
路、光導波路から分岐した二つの位相シフト光導波路、
該二つの位相シフト光導波路の他の端部に配置した光反
射部、前記二つの位相シフト光導波路の近傍に対をなし
て形成した変調電極、及び該変調電極に接続されたアン
テナ部からなり、電界によって前記アンテナ部に誘導さ
れ、前記変調電極に印加された電圧に依存して、前記光
導波路を通った光の強度を変調するセンサヘッドと、該
センサヘッドに接続した光ファイバと、該光ファイバの
他の一端に接続した光サーキュレータつき光源と、該光
サーキュレータの出力端に光ファイバにより接続した光
検出器と、該光検出器の出力を入力とする計測器とから
構成した電界検出装置において、前記二つの位相シフト
光導波路を前記電気光学結晶基板のZ軸方向に形成した
ことを特徴とする電界検出装置。
3. An optical waveguide formed on an electro-optic crystal substrate, two phase shift optical waveguides branched from the optical waveguide,
A light reflecting portion arranged at the other end of the two phase shift optical waveguides, a modulation electrode formed in pairs near the two phase shift optical waveguides, and an antenna portion connected to the modulation electrode. A sensor head that is guided by the electric field to the antenna section and that modulates the intensity of light that has passed through the optical waveguide depending on the voltage applied to the modulation electrode; an optical fiber connected to the sensor head; Electric field detection comprising a light source with an optical circulator connected to the other end of the optical fiber, a photodetector connected to the output end of the optical circulator by an optical fiber, and a measuring instrument having the output of the photodetector as an input In the device, the two phase shift optical waveguides are formed in the Z-axis direction of the electro-optic crystal substrate, the electric field detecting device.
【請求項4】 請求項2記載のセンサヘッドに接続した
光ファイバが、シングルモードファイバであることを特
徴とする電界検出装置。
4. An electric field detecting device, wherein the optical fiber connected to the sensor head according to claim 2 is a single mode fiber.
JP7273448A 1995-09-26 1995-09-26 Electric field detecting device Pending JPH0989961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7273448A JPH0989961A (en) 1995-09-26 1995-09-26 Electric field detecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7273448A JPH0989961A (en) 1995-09-26 1995-09-26 Electric field detecting device

Publications (1)

Publication Number Publication Date
JPH0989961A true JPH0989961A (en) 1997-04-04

Family

ID=17528058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7273448A Pending JPH0989961A (en) 1995-09-26 1995-09-26 Electric field detecting device

Country Status (1)

Country Link
JP (1) JPH0989961A (en)

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Cited By (13)

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Publication number Priority date Publication date Assignee Title
WO1999040449A1 (en) * 1998-02-05 1999-08-12 Advantest Corporation Optically driven driver, optical output type voltage sensor, and ic testing equipment using these devices
WO1999040446A1 (en) * 1998-02-05 1999-08-12 Advantest Corporation Current measuring method, current sensor, and ic tester using the same current sensor
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CN103605005A (en) * 2013-11-13 2014-02-26 清华大学 A photoelectric integrated electric field measurement system based on a double-Y waveguide
CN104614597A (en) * 2015-01-28 2015-05-13 南京信息工程大学 Thunderstorm early-warning method
CN108896838A (en) * 2018-06-12 2018-11-27 昆明理工大学 A kind of integrated light guide electric-field sensor and the electric field measurement system using it

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