JPH0969406A - Manufacture of square-shaped thin film chip resistor - Google Patents

Manufacture of square-shaped thin film chip resistor

Info

Publication number
JPH0969406A
JPH0969406A JP7223288A JP22328895A JPH0969406A JP H0969406 A JPH0969406 A JP H0969406A JP 7223288 A JP7223288 A JP 7223288A JP 22328895 A JP22328895 A JP 22328895A JP H0969406 A JPH0969406 A JP H0969406A
Authority
JP
Japan
Prior art keywords
thin film
electrode layer
board
layer
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7223288A
Other languages
Japanese (ja)
Inventor
Hiroyuki Yamada
博之 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7223288A priority Critical patent/JPH0969406A/en
Publication of JPH0969406A publication Critical patent/JPH0969406A/en
Pending legal-status Critical Current

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  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve the insulating property and the split form of a board, and to simplify a manufacturing process by a method wherein a thin film resistor layer is formed on the surface having no split groove and it is diced using an insulating board having split groove in longitudinal and lateral directions only on the surface of one side. SOLUTION: A metallic component is baked on the surface (surface having no split groove) and the back side of an insulated board 1 having a plurality of split grooves 2 on the back side in longitudinal and lateral direction, and a thin film upper surface electrode layer 3 and a thin film backside electrode layer are formed. A thin film resistor 5 is formed on the thin film surface electrode layer 3, and it is shaped up to a resistance pattern 6 by etching. The resistance pattern 6 is formed into a stable film by heat treatment, and after its resistance value has been corrected by laser trimming, a protective coat 7 is formed by resin paste. The board 1 is divided into rectangular boards 1a, and after a thin film edge face electrode layer 8 has been formed on the edge face, the boards 1a are formed into a diced board 1b, and each electrode layer is protected by a plated layer 9. As a result, the insulating property of the board is improved, and the manufacturing process can be simplified.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、各種電子回路に用いら
れる角形薄膜チップ抵抗器の製造方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a rectangular thin film chip resistor used in various electronic circuits.

【0002】[0002]

【従来の技術】近年、電子機器の小型化に伴い、回路基
板に使用される電子部品に対しても実装密度を高めるた
め、高精度品への要求が高まっている。角形チップ抵抗
器に対しても、電子回路の無調整化のため、抵抗値許容
差の高精度な薄膜チップ抵抗器への要求が高まってお
り、需要の増大にともないローコスト要望が電子機器製
造メーカー側から出されるようになってきた。
2. Description of the Related Art In recent years, with the miniaturization of electronic devices, there is an increasing demand for high-precision products in order to increase the mounting density of electronic components used in circuit boards. Even for rectangular chip resistors, demand for high-precision thin film chip resistors with a high resistance tolerance is increasing due to no adjustment of electronic circuits. With the increasing demand, low cost demands are placed on electronic device manufacturers. It is coming out from the side.

【0003】以下に、従来の角形薄膜チップ抵抗器の製
造方法について、図面を参照しながら説明する。
A conventional method for manufacturing a rectangular thin film chip resistor will be described below with reference to the drawings.

【0004】図3は従来の角形薄膜チップ抵抗器の製造
工程を示す図である。まず、工程Aに示すように、高純
度のアルミナなどからなる耐熱性の分割溝の無い絶縁基
板21を受け入れる。
FIG. 3 is a diagram showing a manufacturing process of a conventional rectangular thin film chip resistor. First, as shown in step A, a heat-resistant insulating groove-less insulating substrate 21 made of high-purity alumina or the like is received.

【0005】次に、工程Bに示すように、絶縁基板21
上にスパッタにてNi−Cr等の薄膜抵抗体を形成し、
工程Cに示すように、薄膜抵抗体をエッチングして抵抗
パターン22に形成する。
Next, as shown in step B, the insulating substrate 21
Form a thin film resistor such as Ni-Cr on the top by sputtering,
As shown in step C, the thin film resistor is etched to form the resistance pattern 22.

【0006】次に、工程Dに示すように、抵抗パターン
22上にスパッタにてCu等の薄膜電極を形成し、工程
Eに示すように、エッチングにて薄膜電極を電極パター
ン23に形成する。
Next, as shown in step D, a thin film electrode of Cu or the like is formed on the resistance pattern 22 by sputtering, and as shown in step E, a thin film electrode is formed on the electrode pattern 23 by etching.

【0007】次に、工程Fに示すように、抵抗パターン
22および電極パターン23を安定な膜にするために、
窒素中などで350〜400℃の温度の熱処理を行う。
Next, as shown in step F, in order to make the resistance pattern 22 and the electrode pattern 23 stable films,
Heat treatment is performed at a temperature of 350 to 400 ° C. in nitrogen or the like.

【0008】次に工程Gに示すように、抵抗パターン2
2の抵抗値を所定の値に修正するためにレーザートリミ
ング等により、抵抗値修正を行う。
Next, as shown in step G, the resistance pattern 2
In order to correct the resistance value of No. 2 to a predetermined value, the resistance value is corrected by laser trimming or the like.

【0009】次に、工程Hに示すように、抵抗値修正済
抵抗パターン24を保護するために、少なくとも抵抗パ
ターン22を覆うように熱硬化性の樹脂による保護コー
ト25を行う。
Next, as shown in step H, in order to protect the resistance pattern 24 whose resistance value has been corrected, a protective coat 25 made of a thermosetting resin is applied so as to cover at least the resistance pattern 22.

【0010】次に、工程Iに示すように、絶縁基板21
を分割し、端面電極層27を形成するための準備工程と
して、絶縁基板21に分割のための溝26を形成する。
Next, as shown in step I, the insulating substrate 21
As a preparatory step for dividing and dividing the end face electrode layer 27, the groove 26 for division is formed in the insulating substrate 21.

【0011】次に、工程Jに示すように、絶縁基板21
を短冊状基板21aに分割する一次基板分割を行い、工
程Kに示すように、その短冊状基板21aの端面にスパ
ッタ等を用い、端面電極層27を形成する端面電極形成
をする。
Next, as shown in step J, the insulating substrate 21
Is divided into strip-shaped substrates 21a, and as shown in step K, end-face electrodes for forming the end-face electrode layers 27 are formed on the end faces of the strip-shaped substrates 21a by using sputtering or the like.

【0012】次に、工程Lに示すように、露出している
電極面にめっきを施すための準備工程として、短冊状基
板21aを個片状基板21bに分割する二次基板分割す
る。
Next, as shown in step L, as a preparatory step for plating the exposed electrode surface, the strip-shaped substrate 21a is divided into individual substrates 21b.

【0013】最後に、工程Mに示すように、はんだ付け
時の信頼性の確保のため電極めっき28を形成して、角
形薄膜チップ抵抗器を製造していた。
Finally, as shown in the step M, the electrode thin film chip resistor 28 is manufactured by forming the electrode plating 28 in order to ensure reliability during soldering.

【0014】また、他の方法として、絶縁基板として両
面に縦方向及び横方向の分割溝を有する絶縁基板を用
い、これにNi−Cr等の薄膜抵抗体をスパッタ形成す
る方法もある。しかしながら、この方法では分割溝の中
に薄膜抵抗体材料が侵入してしまい、これを完全に除去
することが難しく、この除去のために工程を増やさざる
を得なかった。
As another method, there is also a method in which an insulating substrate having vertical and horizontal dividing grooves on both sides is used as the insulating substrate and a thin film resistor such as Ni-Cr is sputtered thereon. However, with this method, the thin film resistor material penetrates into the dividing grooves, and it is difficult to completely remove it, so that the number of steps must be increased for this removal.

【0015】[0015]

【発明が解決しようとする課題】しかしながら、従来の
薄膜チップ抵抗器の製造方法では、以下に示すような課
題を有していた。
However, the conventional method of manufacturing a thin film chip resistor has the following problems.

【0016】(1)分割溝無しの絶縁基板21にパター
ン形成後、レーザースクライブによって分割のための溝
を形成しているため、美観を損なうばかりでなく、レー
ザーの熱的衝撃による基板のマイクロクラックが生じや
すく、絶縁劣化の原因になりかねない。また、工程も煩
雑になりやすい。
(1) Since a groove for dividing is formed by laser scribing after forming a pattern on the insulating substrate 21 having no dividing groove, not only the appearance is impaired, but microcracks of the substrate due to the thermal shock of the laser are generated. Easily occurs, which may cause deterioration of insulation. In addition, the process tends to be complicated.

【0017】(2)分割溝のある基板に薄膜抵抗体を形
成すると、分割溝の中に薄膜抵抗体材料が侵入してしま
い、これを除去することが難しい。分割溝の中に薄膜抵
抗体材料が残留した場合には、隣同士の抵抗体が連結さ
れてしまい、正確な抵抗値修正ができなくなり、さらに
後のめっき工程で残留した部分に電極めっき28が形成
されてしまい、特性および外観を低下させていた。
(2) When a thin film resistor is formed on a substrate having a dividing groove, the thin film resistor material enters the dividing groove and is difficult to remove. When the thin film resistor material remains in the dividing groove, the resistors adjacent to each other are connected to each other, and the resistance value cannot be corrected accurately. Further, the electrode plating 28 is formed on the remaining portion in the subsequent plating process. It was formed, and the characteristics and appearance were deteriorated.

【0018】本発明は上記従来の課題を解決するため
に、簡単な工程により、安価で、基板の絶縁性に優れた
角形薄膜チップ抵抗器の製造方法を提供することを目的
とするという課題を有していた。
In order to solve the above-mentioned conventional problems, it is an object of the present invention to provide a method for manufacturing a rectangular thin film chip resistor which is inexpensive and has an excellent substrate insulating property by a simple process. Had.

【0019】[0019]

【課題を解決するための手段】上記目的を達成するため
に本発明の角形薄膜チップ抵抗器の製造方法は、一方の
面にのみ縦方向および横方向の分割溝を有する絶縁基板
を用い、前記絶縁基板の分割溝の無い面上に薄膜抵抗体
層を形成し、個片に分割することを特徴とするものであ
る。
In order to achieve the above object, a method for manufacturing a rectangular thin film chip resistor according to the present invention uses an insulating substrate having vertical and horizontal dividing grooves only on one surface, It is characterized in that a thin film resistor layer is formed on a surface of the insulating substrate having no dividing groove and divided into individual pieces.

【0020】[0020]

【作用】本発明によれば、あらかじめ一方の面にのみ分
割溝を有する絶縁基板を使用するため、従来のようにレ
ーザースクライブによって分割のための溝を形成する必
要がないため、基板の絶縁性が向上され、分割形状も良
好であり、工程の簡略化も図れる。
According to the present invention, since an insulating substrate having a dividing groove on only one surface is used in advance, it is not necessary to form a dividing groove by laser scribing as in the conventional case, so that the insulating property of the substrate is improved. Is improved, the divided shape is good, and the process can be simplified.

【0021】また、薄膜抵抗体層を絶縁基板の分割溝の
無い面に形成することにより、分割溝の中に薄膜抵抗体
材料が残留することがなくなり、隣同士の抵抗体の連結
による抵抗値修正での不具合や、残留部分へのめっき形
成が防止できる。
Further, by forming the thin film resistor layer on the surface of the insulating substrate having no dividing groove, the thin film resistor material does not remain in the dividing groove, and the resistance value due to the connection of the resistors adjacent to each other. It is possible to prevent problems caused by correction and formation of plating on the remaining portion.

【0022】[0022]

【実施例】以下、本発明の一実施例における角形薄膜チ
ップ抵抗器の製造方法について、図面を用いて説明す
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a rectangular thin film chip resistor according to an embodiment of the present invention will be described below with reference to the drawings.

【0023】図1は本発明の一実施例における角形薄膜
チップ抵抗器の製造方法を示す工程図、図2は同断面図
である。本実施例では96%アルミナを有する絶縁基板
(以下、「96アルミナ基板」と記す)の表裏面の区別
のため、分割溝のある面を裏面、分割溝の無い面を表面
として説明する。
FIG. 1 is a process diagram showing a method of manufacturing a rectangular thin film chip resistor according to an embodiment of the present invention, and FIG. 2 is a sectional view of the same. In the present embodiment, in order to distinguish between the front and back surfaces of an insulating substrate having 96% alumina (hereinafter referred to as "96 alumina substrate"), the surface having the dividing groove will be described as the back surface and the surface having no dividing groove will be described as the front surface.

【0024】まず、工程Aに示すように、耐熱性および
絶縁性に優れた96アルミナ基板1を受け入れる。この
96アルミナ基板1の裏面には、短冊状および個片状に
分割するために設けた複数の縦方向および横方向の分割
溝2が形成されている。
First, as shown in step A, the 96 alumina substrate 1 having excellent heat resistance and insulating properties is received. On the back surface of the 96-alumina substrate 1, a plurality of vertical and horizontal dividing grooves 2 are formed for dividing into strips and individual pieces.

【0025】次に、工程Bに示すように、96アルミナ
基板1の表面(分割溝の無い面)にAuを主成分とする
金属有機物からなる電極ペーストをスクリーン印刷・乾
燥し、更に96アルミナ基板1の裏面に金属有機物電極
ペーストの有機成分だけを飛ばし、金属成分だけをアル
ミナ基板1上に焼き付けるために、ベルト式連続焼成炉
によって850℃の温度で、ピーク時間6分、IN−O
UT時間45分のプロファイルによって焼成し、薄膜上
面電極層3および薄膜裏面電極層4を同時に形成する。
Next, as shown in step B, an electrode paste made of a metal organic compound containing Au as a main component is screen-printed and dried on the surface of the 96 alumina substrate 1 (the surface having no dividing groove), and the 96 alumina substrate is further dried. In order to blow only the organic component of the metal organic electrode paste on the back surface of No. 1 and to bake only the metal component on the alumina substrate 1, a belt type continuous firing furnace was used at a temperature of 850 ° C. for a peak time of 6 minutes and IN-O.
The thin film top surface electrode layer 3 and the thin film back surface electrode layer 4 are simultaneously formed by firing according to a profile of UT time 45 minutes.

【0026】次に、工程Cに示すように、96アルミナ
基板1の薄膜上面電極層3を形成した面(分割溝の無い
面)上にスパッタにてNi−Crの薄膜抵抗体5を形成
する。
Next, as shown in step C, a Ni--Cr thin film resistor 5 is formed by sputtering on the surface of the 96 alumina substrate 1 on which the thin film upper surface electrode layer 3 is formed (the surface having no dividing groove). .

【0027】次に、工程Dに示すように、薄膜抵抗体5
を抵抗パターン6に整形するエッチングを行う。
Next, as shown in step D, the thin film resistor 5
Etching to shape the resistance pattern 6 is performed.

【0028】次に、工程Eに示すように、抵抗パターン
を安定な膜にするために、窒素中で250〜400℃の
温度の熱処理を行う。
Next, as shown in step E, heat treatment is performed in nitrogen at a temperature of 250 to 400 ° C. in order to form a stable film of the resistance pattern.

【0029】次に、工程Fに示すように、抵抗パターン
6の抵抗値を所定の値に修正するためにレーザートリミ
ングにより、抵抗値修正を行う。
Next, as shown in step F, the resistance value is corrected by laser trimming in order to correct the resistance value of the resistance pattern 6 to a predetermined value.

【0030】次に、工程Gに示すように、抵抗値修正済
み抵抗パターンを保護するために、樹脂ペーストをスク
リーン印刷し、熱硬化して保護コート7を形成する。
Next, as shown in step G, in order to protect the resistance pattern whose resistance value has been corrected, a resin paste is screen-printed and heat-cured to form a protective coat 7.

【0031】次に、工程Hに示すように、96アルミナ
基板1を分割し、薄膜端面電極層8を形成するための準
備工程として、96アルミナ基板1を短冊状基板1aに
分割する一次基板分割し、工程Iに示すように、その短
冊状基板1aの端面にスパッタによりNi−Crの薄膜
端面電極層8を形成する端面電極形成をする。
Next, as shown in step H, as a preparatory step for dividing the 96 alumina substrate 1 and forming the thin film end face electrode layer 8, the 96 alumina substrate 1 is divided into strip substrates 1a. Then, as shown in step I, an end face electrode is formed on the end face of the strip-shaped substrate 1a by sputtering to form a thin film end face electrode layer 8 of Ni—Cr.

【0032】次に、工程Jに示すように、露出している
電極面にめっきを施すための準備工程として、短冊状基
板1aを個片状基板1bに分割する二次基板分割を行
う。
Next, as shown in step J, as a preparatory step for plating the exposed electrode surface, a secondary substrate division for dividing the strip substrate 1a into individual substrates 1b is performed.

【0033】最後に工程Kに示すように、露出している
薄膜上面電極層3と薄膜裏面電極層4と薄膜端面電極層
8のはんだ付け時の電極食われの防止およびはんだ付け
時の信頼性の確保のため、電解めっきによってNi,S
n−Pbのめっき層9を形成して、角形薄膜チップ抵抗
器を製造するものである。
Finally, as shown in step K, the exposed thin film upper surface electrode layer 3, the thin film back surface electrode layer 4, and the thin film end surface electrode layer 8 are prevented from electrode erosion during soldering and reliability at the time of soldering. Ni, S by electrolytic plating to secure the
A square thin film chip resistor is manufactured by forming an n-Pb plating layer 9.

【0034】以上の工程により、本発明の実施例による
角形薄膜チップ抵抗器を試作した。この結果、従来の製
造方法で課題となっていた抵抗値修正時の隣同士の素子
間の連結による不具合、ならびに完成品での分割溝付近
での薄膜抵抗体の残留によるめっき形成も発生しなかっ
た。また、電極めっき後の完成品の分割形状も従来より
良好であった。
Through the above steps, a rectangular thin film chip resistor according to an embodiment of the present invention was manufactured. As a result, the problems caused by the connection between adjacent elements at the time of resistance value correction, which was a problem in the conventional manufacturing method, and the plating formation due to the thin film resistor remaining in the vicinity of the dividing groove in the finished product does not occur. It was The divided shape of the finished product after electrode plating was also better than before.

【0035】また、本発明の角形薄膜チップ抵抗器と、
従来の角形薄膜チップ抵抗器との抵抗値ばらつき、抵抗
温度特性、電流雑音特性を比較したところ、同等である
ことがわかった。
Also, a prismatic thin film chip resistor of the present invention,
Comparison of resistance variation, resistance temperature characteristics, and current noise characteristics with the conventional rectangular thin-film chip resistors revealed that they were equivalent.

【0036】なお、本実施例では金属有機物電極ペース
トを用いて薄膜上面電極層および薄膜裏面電極層を形成
したが、これは製造材料および方法を制限するものでは
なく、薄膜抵抗体と同様の形成方法(スパッタおよびエ
ッチング)でも可能である。
In this example, the thin film top surface electrode layer and the thin film back surface electrode layer were formed using the metal organic electrode paste, but this does not limit the manufacturing material and method, and is similar to the thin film resistor. The method (sputtering and etching) is also possible.

【0037】[0037]

【発明の効果】以上のように本発明は、あらかじめ一方
の面にのみ分割溝を形成済みの絶縁基板を用いることに
より、従来必要とされたレーザースクライブによって分
割のための溝を形成する必要がなくなり、製造工程の簡
略化により製造コストを低減できるとともに、基板の絶
縁性が向上できる角形薄膜チップ抵抗器の製造方法を提
供するものである。
As described above, according to the present invention, it is necessary to form a groove for division by laser scribing, which has been conventionally required, by using an insulating substrate in which a dividing groove is formed on only one surface in advance. (EN) A manufacturing method of a rectangular thin film chip resistor capable of reducing the manufacturing cost by simplifying the manufacturing process and improving the insulating property of the substrate.

【0038】また、薄膜抵抗体層を絶縁基板の分割溝の
無い面に形成することにより、分割溝の中に薄膜抵抗体
材料が残留することがなくなり、隣同士の抵抗体の連結
による抵抗値修正での不具合や残留部分へのめっき形成
が防止でき、製品の品質レベルを向上できる角形薄膜チ
ップ抵抗器の製造方法を提供するものである。
Further, by forming the thin film resistor layer on the surface of the insulating substrate having no dividing groove, the thin film resistor material does not remain in the dividing groove, and the resistance value due to the connection of the resistors adjacent to each other is eliminated. The present invention provides a method for manufacturing a rectangular thin film chip resistor, which can prevent defects caused by correction and formation of plating on a residual portion and can improve the quality level of products.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例における角形薄膜チップ抵抗
器の製造方法を示す工程図
FIG. 1 is a process diagram showing a method for manufacturing a rectangular thin film chip resistor according to an embodiment of the present invention.

【図2】同断面図FIG. 2 is a sectional view of the same.

【図3】従来の角形薄膜チップ抵抗器の製造方法を示す
工程図
FIG. 3 is a process diagram showing a method of manufacturing a conventional rectangular thin film chip resistor.

【符号の説明】[Explanation of symbols]

1 96アルミナ基板 2 分割溝 3 薄膜上面電極層 4 薄膜裏面電極層 5 薄膜抵抗体 7 保護コート 8 薄膜端面電極層 9 めっき層 1 96 Alumina substrate 2 Dividing groove 3 Thin film upper surface electrode layer 4 Thin film back surface electrode layer 5 Thin film resistor 7 Protective coat 8 Thin film end surface electrode layer 9 Plating layer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 一方の面にのみ縦方向および横方向の分
割溝を有する絶縁基板の分割溝の無い面上に薄膜抵抗体
層を形成し、個片に分割してなる角形薄膜チップ抵抗器
の製造方法。
1. A rectangular thin film chip resistor formed by forming a thin film resistor layer on a surface not having a dividing groove of an insulating substrate having dividing grooves in the vertical and horizontal directions on only one surface and dividing the thin film resistor into individual pieces. Manufacturing method.
【請求項2】 一方の面にのみ縦方向および横方向の分
割溝を有する絶縁基板の分割溝の無い面上に一対の薄膜
上面電極層を形成し、この面に前記一対の薄膜上面電極
層に重なるように薄膜抵抗体層を形成し、この薄膜抵抗
体層の抵抗値を修正し、この薄膜抵抗体層を完全に覆う
ように保護膜層を形成し、薄膜端面電極層を形成するた
めの準備工程として基板を一次分割し、前記一対の薄膜
上面電極層と電気的に接続するように一次分割により露
出した面に一対の薄膜端面電極層を形成し、電極めっき
のための準備工程として基板を個片に分割し、露出した
電極部に電極めっきを形成することを特徴とする角形薄
膜チップ抵抗器の製造方法。
2. A pair of thin film upper surface electrode layers are formed on a surface having no dividing grooves of an insulating substrate having dividing grooves in vertical and horizontal directions on only one surface, and the pair of thin film upper surface electrode layers are formed on this surface. To form a thin film resistor layer so that it overlaps with, modify the resistance value of this thin film resistor layer, form a protective film layer so as to completely cover this thin film resistor layer, and form a thin film end face electrode layer. As a preparatory step for electrode plating, the substrate is primary-divided, and a pair of thin-film end surface electrode layers are formed on the surfaces exposed by the primary division so as to be electrically connected to the pair of thin-film upper surface electrode layers. A method of manufacturing a rectangular thin film chip resistor, characterized in that a substrate is divided into individual pieces and electrode plating is formed on the exposed electrode portions.
JP7223288A 1995-08-31 1995-08-31 Manufacture of square-shaped thin film chip resistor Pending JPH0969406A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7223288A JPH0969406A (en) 1995-08-31 1995-08-31 Manufacture of square-shaped thin film chip resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7223288A JPH0969406A (en) 1995-08-31 1995-08-31 Manufacture of square-shaped thin film chip resistor

Publications (1)

Publication Number Publication Date
JPH0969406A true JPH0969406A (en) 1997-03-11

Family

ID=16795793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7223288A Pending JPH0969406A (en) 1995-08-31 1995-08-31 Manufacture of square-shaped thin film chip resistor

Country Status (1)

Country Link
JP (1) JPH0969406A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999001876A1 (en) * 1997-07-03 1999-01-14 Matsushita Electric Industrial Co., Ltd. Resistor and method of producing the same
EP0929083A1 (en) * 1998-01-08 1999-07-14 Matsushita Electric Industrial Co., Ltd Resistor and its manufacturing method
JP2001044001A (en) * 1999-07-30 2001-02-16 Rohm Co Ltd Structure of thin-film resistor and resistance value adjusting method
US7103965B2 (en) 2002-01-17 2006-09-12 Rohm Co., Ltd. Method of making chip resistor
WO2018061961A1 (en) * 2016-09-27 2018-04-05 パナソニックIpマネジメント株式会社 Chip resistor

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999001876A1 (en) * 1997-07-03 1999-01-14 Matsushita Electric Industrial Co., Ltd. Resistor and method of producing the same
KR100333298B1 (en) * 1997-07-03 2002-04-25 모리시타 요이찌 Resistor and method of producing the same
US6636143B1 (en) 1997-07-03 2003-10-21 Matsushita Electric Industrial Co., Ltd. Resistor and method of manufacturing the same
EP0929083A1 (en) * 1998-01-08 1999-07-14 Matsushita Electric Industrial Co., Ltd Resistor and its manufacturing method
US6023217A (en) * 1998-01-08 2000-02-08 Matsushita Electric Industrial Co., Ltd. Resistor and its manufacturing method
JP2001044001A (en) * 1999-07-30 2001-02-16 Rohm Co Ltd Structure of thin-film resistor and resistance value adjusting method
US7103965B2 (en) 2002-01-17 2006-09-12 Rohm Co., Ltd. Method of making chip resistor
US7352273B2 (en) 2002-01-17 2008-04-01 Rohm Co., Ltd. Chip resistor
WO2018061961A1 (en) * 2016-09-27 2018-04-05 パナソニックIpマネジメント株式会社 Chip resistor
CN109416964A (en) * 2016-09-27 2019-03-01 松下知识产权经营株式会社 Chip resister
JPWO2018061961A1 (en) * 2016-09-27 2019-07-11 パナソニックIpマネジメント株式会社 Chip resistor
CN109416964B (en) * 2016-09-27 2021-04-23 松下知识产权经营株式会社 Chip resistor

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