JPH09232301A - Semiconductor manufacture device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device which can restrain metallic contamination, etc., to a semiconductor wafer from a metallic jig for a long period in a semiconductor manufacturing device with a metallic jig formed of a metallic material. SOLUTION: In this device, an alumina ceramics film is formed and applied to each stainless copper surface of a gas ring 12, an exhaust flange 13, a susceptor 14, a top plate 15, a flow rate adjustment valve 17a and a main valve 17 which are metallic jigs of a barrel-type vapor growth device. Thereby, a metallic jig is protected by a ceramics film of strong anticorrosion and metallic contamination of a semiconductor wafer 100 which is subjected to vapor growth treatment is restrained for a long period.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus used for manufacturing a semiconductor wafer, and more particularly to a semiconductor manufacturing apparatus having a metal jig formed of a metal material.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor manufacturing apparatus of this type, there are an oxidation furnace, a heat treatment furnace such as a diffusion furnace, and various CVD furnaces. Among these, a supporting jig made of a metal material and various kinds of Equipped with metal jigs such as piping. These metal jigs should not react with corrosive gases such as hydrochloric acid,
Further, an oxide film is formed on the surface thereof so as not to generate dust and the like. This oxide film has a stable property against a corrosive gas or heat. However, if moisture enters the treatment system together with the corrosive gas, it is oxidized due to oxygen contained in the moisture. A pinhole is generated by the reduction reaction. The pinholes in the oxide film are such that the metal jig itself, which is the base of the oxide film, is directly exposed to the corrosive gas, and the metal material of the metal jig reacts with the corrosive gas, so that the There is a case where a semiconductor wafer being processed by generating chloride gas is contaminated with metal.

In order to prevent metal contamination of the semiconductor wafer, there is a CVD apparatus as a semiconductor wafer manufacturing apparatus, an impurity diffusion furnace, and a semiconductor wafer cleaning method disclosed in Japanese Patent Publication No. 7-4055. In this semiconductor wafer manufacturing apparatus, a reaction gas such as hydrochloric acid supplied into the apparatus is brought into contact with one side of a fluorinated copolymer film having a cation exchange group, and the other side of this fluorinated copolymer film is contacted. By contacting with a dry purge gas, water and the like are removed from the reaction gas such as hydrochloric acid, and the reaction gas from which the water and the like have been removed is supplied into the processing system of the apparatus. Further, in a semiconductor wafer manufacturing apparatus that does not employ such a configuration, the metal jig coated with an oxide film is periodically replaced, for example, every 3 to 12 months to prevent metal contamination of the semiconductor wafer.

[0004]

Since the conventional semiconductor manufacturing apparatus is constructed as described above, the above Japanese Patent Publication No.
Regarding the one disclosed in Japanese Patent Publication No.-4055, it is said that the moisture in the corrosive gas cannot be sufficiently removed due to the deterioration of the fluorine-based copolymer film, and the semiconductor wafer is contaminated by the moisture remaining in the corrosive gas. Have challenges. In particular, in the epitaxial growth process or the like in which a large amount of corrosive gas is used, there is a problem that the semiconductor wafer cannot be prevented from being contaminated unless the fluorine-based copolymer film is replaced very frequently.

Further, when the structure is made without using such a fluorine-containing copolymer film, there is a problem that the metal jig covered with the oxide film must be replaced more frequently. The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus capable of suppressing metal contamination of a semiconductor wafer from a metal jig over a long period of time.

[0006]

A semiconductor manufacturing apparatus according to the present invention is used in the manufacture of semiconductor wafers and is provided with a metal jig formed of a metal material. It is one that is covered with a ceramic film either indirectly or indirectly. As described above, in the present invention, by directly or indirectly forming and coating the ceramic film on the surface of the metal jig, the metal jig can be protected by the ceramic film having strong corrosion resistance. The metal contamination can be suppressed for a long period of time.

Further, in the semiconductor manufacturing apparatus according to the present invention, the ceramic film is coated by plasma spraying if necessary. As described above, according to the present invention, since the surface of the metal jig is coated with the ceramic film by plasma spraying, the ceramic film can be uniformly and surely deposited on the metal jig of any shape. The surface of the ingredient can be stably and strongly protected by the ceramic film. Further, in the semiconductor manufacturing apparatus according to the present invention, the ceramic film is formed of alumina, if necessary. As described above, in the present invention, since the ceramic film is formed of alumina, it is possible to continuously maintain chemically and thermally stable corrosion resistance.

[0008]

BEST MODE FOR CARRYING OUT THE INVENTION

(One Embodiment of the Invention) A semiconductor manufacturing apparatus according to one embodiment of the present invention will be described below with reference to FIG. 1 by taking a barrel type vapor deposition apparatus as an example. This FIG. 1 shows a schematic sectional view of the barrel type vapor phase growth apparatus. In the figure, the barrel-type vapor deposition apparatus according to the present embodiment is provided with a bell jar 10 formed of quartz as a reaction chamber for supplying a reaction gas and performing various reaction processes on the semiconductor wafer 100. A gas ring 12 made of stainless steel, which is disposed on the other side of the bell jar 10 to prevent the reaction gas from leaking, and an exhaust flange 13 which is disposed on the other end side of the bell jar 10 and is formed of stainless steel to discharge the reaction gas. Belja 1
0 is inserted through the upper opening of the susceptor 14 for supporting the semiconductor wafer 100 on the side surface, and the bell ring 1 is mounted between the susceptor 14 and the gas ring 12.
0, a top plate 15 for maintaining airtightness, a supply pipe 16 communicating with the bell jar 10 through the top plate 15 and supplying a reaction gas, and a supply pipe 16 disposed between the supply pipe 16 and the reaction gas The gas ring 12, the exhaust flange 13, the susceptor 14, the top plate 15, the flow rate adjusting valve 17a, and the main valve 17 which are provided with the flow rate adjusting valve 17a and the main valve 17 for adjusting the supply flow rate are formed. The surface of each stainless steel is covered with a ceramic film of alumina.

This ceramic film is composed of a gas ring 12,
Exhaust flange 13, susceptor 14, top plate 15, flow rate adjusting valve 17a and main valve 17
Is formed by forming a film of alumina by plasma spraying. A barrel type vapor phase growth apparatus is constructed using the gas ring 12, the exhaust flange 13, the susceptor 14, the top plate 15, the flow rate adjusting valve 17a and the main valve 17 which are covered with the ceramic film, and the barrel type vapor phase growth is performed. An epitaxial growth process is performed on the semiconductor wafer 100 by the apparatus. FIG. 2 shows a wafer lifetime characteristic chart with respect to the number of processing batches of epitaxial growth in this case. In the figure, the case where each member is covered with the alumina ceramic film is shown by a circle, and the case where each member is not covered with the alumina ceramic film is shown with a triangle.
For this wafer lifetime, an N-type silicon wafer is used as the semiconductor wafer 100, and this silicon wafer is heat-treated for 30 minutes in a hydrogen atmosphere at 1000 to 1200 ° C.
Oxidation treatment was carried out at 00 ° C. for 10 minutes, and after the oxidation treatment, measurement was carried out by a photoconductivity decay method. It can be seen that the wafer lifetime is longer when the ceramic film is coated than when it is not coated, and the wafer lifetime is not attenuated even if the number of processing batches is increased. Although the barrel type vapor deposition apparatus is applied in the above-described embodiment, it may be applied to the vertical type vapor deposition apparatus shown in FIG. 3 or the single-wafer type vapor deposition apparatus shown in FIG. it can. The vertical vapor deposition apparatus shown in FIG. 3 includes a main valve 17 provided in the middle of a supply pipe 16 connected to a quartz pipe 16a, and a quartz chamber 2.
The plate 18 for blocking the lower opening of 0 and the exhaust flange 11 for connecting the exhaust pipe 16b to the plate 18 are made of stainless steel, and the ceramic film of alumina is formed on the surface of the stainless steel of each part. Is a structure for covering.

Further, in the single-wafer type vapor layer growth apparatus shown in each of the above-mentioned FIG. 4, an injection flange 19 for connecting the supply pipe 16 to the quartz chamber 20 and the exhaust pipe 1 for the quartz chamber 20.
Exhaust flange 11 connecting 6c, main valve 17 interposed in the middle of supply pipe 16, wafer transfer outlets 20a and thermocouple fixed to both side openings of quartz chamber 20. The flanges 20b for use are each made of stainless steel, and the surface of the stainless steel of each portion is covered with a ceramic film of alumina.

Further, in each of the above-mentioned embodiments, the vapor layer growth apparatus is applied, but it is also applied to various heat treatment furnaces, CVD furnaces and the like having a metal jig formed of a metal material for its parts in the semiconductor manufacturing apparatus. You can also It should be noted that at least one of these devices and metal jigs constituting the furnace may be coated with a ceramic film. Further, in each of the above embodiments, the ceramic film is directly coated on the surface of various metal jigs formed of stainless steel, but an intermediate layer is formed on the stainless steel surface of these various metal jigs. It can also be configured.

FIG. 5 shows a characteristic diagram of the rate of change in weight of the top flange with respect to the number of processing batches in the barrel-type vapor deposition apparatus. In the figure, the case where the fluorinated passivation film intermediate layer is coated with the alumina ceramic film is shown by a circle, the case where only the alumina ceramic film is shown is shown by a square, and the case where it is not coated is shown by a triangle. It can be seen that the ceramic film was coated through this intermediate layer and the adhesion of the protective film was improved, which was manifested as a slight difference in the rate of change in weight observed between the ○ mark and the □ mark in the vicinity of 5000 batches.

In this case, the intermediate layer may be formed by coating the surface of stainless steel with a chromium oxide metal film. Further, when the metal jig is formed of stainless steel, titanium, or various alloys thereof, an intermediate layer is formed by coating the surface of these with a tungsten carbide film, and the tungsten carbide film is used to form the intermediate layer. Alternatively, the ceramic film may be coated.

In each of the above embodiments, the ceramic film is formed by plasma spraying, but the ceramic film may be formed by a vapor deposition method, a sputtering method, a CVD method or the like. Further, in each of the above-mentioned embodiments, the ceramic film is made of alumina, but silicon oxide, chromium oxide or the like may be fusion-coated as a ceramic film on the surface of the metal jig with barium borosilicate glass or the like. Further, in each of the above-described embodiments, when the reaction gas supply pipe or the discharge pipe is formed of metal such as stainless steel, the insides of the supply pipe and the discharge pipe may be covered with a ceramic film.

[0015]

As described above, according to the present invention, a ceramic film having a strong corrosion resistance can be used to protect the metal jig by directly or indirectly forming and coating a ceramic film on the surface of the metal jig. Therefore, it is possible to suppress the metal contamination of the manufactured semiconductor wafer over a long period of time. Further, according to the present invention, since the surface of the metal jig is coated with the ceramic film by plasma spraying, the ceramic film can be uniformly and surely deposited on the metal jig of any shape. It has an effect that the surface can be stably and strongly protected by the ceramic film. Further, the present invention has an effect that the chemically and thermally stable corrosion resistance can be continuously maintained since the ceramic film is formed of alumina.

[Brief description of drawings]

FIG. 1 is a schematic configuration cross-sectional view of a semiconductor manufacturing apparatus using a barrel type vapor phase growth apparatus according to an embodiment of the present invention as an example.

FIG. 2 is a wafer lifetime characteristic chart with respect to the number of processing batches for producing a single crystal layer in the semiconductor manufacturing apparatus shown in FIG. .

FIG. 3 is a schematic cross-sectional view of a semiconductor manufacturing apparatus using a vertical vapor deposition apparatus according to another embodiment of the present invention as an example.

FIG. 4 is a schematic configuration cross-sectional view of a semiconductor manufacturing apparatus, which exemplifies a single-wafer vapor deposition apparatus according to another embodiment of the present invention.

FIG. 5 is a characteristic diagram of the weight change rate of the top flange with respect to the number of processing batches in the barrel-type vapor deposition apparatus according to another embodiment of the present invention.

[Explanation of symbols]

 10 bell jar 12 gas ring 13 exhaust flange 14 susceptor 15 top plate 16 supply pipe 16b quartz pipe 16c exhaust pipe 17 main valve 17a flow control valve 18 plate 19 injector flange 20 quartz chamber 20a wafer transfer outlet 20b thermocouple fixed Flange 100 Semiconductor wafer

Claims (3)

[Claims] 1. A semiconductor manufacturing apparatus used for manufacturing a semiconductor wafer, comprising a metal jig formed of a metal material, wherein the surface of the metal jig is directly or indirectly coated with a ceramic film. Semiconductor manufacturing equipment. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the ceramic film is coated by plasma spraying. 3. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the ceramic film is made of alumina.