JPH0835898A - Temperature characteristic regulating method for semiconductor type pressure sensor - Google Patents
Temperature characteristic regulating method for semiconductor type pressure sensorInfo
- Publication number
- JPH0835898A JPH0835898A JP6172295A JP17229594A JPH0835898A JP H0835898 A JPH0835898 A JP H0835898A JP 6172295 A JP6172295 A JP 6172295A JP 17229594 A JP17229594 A JP 17229594A JP H0835898 A JPH0835898 A JP H0835898A
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- temperature
- gage
- gauge
- type pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体式圧力センサの
温度特性調整方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature characteristic adjusting method for a semiconductor pressure sensor.
【０００２】[0002]
【従来の技術】従来の半導体式圧力センサの温度特性調
整方法は特開昭62−223601号公報に示すような回路を用
い、高温下で温度特性を調整するが予備加熱装置と抵抗
トリミング調整装置が別体の場合、抵抗トリミング調整
装置に移動した後に温度補償素子（例えばサーミスタ）
の温度が下がりゲージ部温度と差が発生するため圧力セ
ンサ特性が変化してしまう。その結果、高温特性調整精
度が悪化する問題がある。一方、予備加熱装置と抵抗ト
リミング調整装置が一体の場合、装置に汎用性がないた
め圧力センサの機種ごとに装置が必要になり設備投資が
高くなる問題がある。2. Description of the Related Art A conventional temperature characteristic adjusting method of a semiconductor type pressure sensor uses a circuit as disclosed in Japanese Patent Laid-Open No. 223601/1987 and adjusts the temperature characteristic at high temperature, but a preheating device and a resistance trimming adjusting device are used. If it is a separate unit, move to the resistance trimming adjustment device and then move to the temperature compensation element (eg thermistor).
The temperature of the sensor decreases and a difference with the temperature of the gauge portion occurs, so that the pressure sensor characteristics change. As a result, there is a problem that the high temperature characteristic adjustment accuracy deteriorates. On the other hand, when the preheating device and the resistance trimming adjustment device are integrated, the device is not versatile, and a device is required for each model of the pressure sensor, which causes a problem of high equipment investment.
【０００３】[0003]
【発明が解決しようとする課題】上記従来技術は、設備
投資を安価にして、半導体式圧力センサを精度良く温度
特性を調整することに配慮されていない。The above-mentioned prior art does not take into account the cost reduction of equipment and the precise adjustment of the temperature characteristics of the semiconductor pressure sensor.
【０００４】[0004]
【課題を解決するための手段】予備加熱中ゲージに印加
されている電圧、あるいは高温特性調整装置にセット直
後のゲージに印加されている電圧を測定し、安定化電源
により前記測定電圧をゲージに供給する。[Means for Solving the Problems] The voltage applied to the gauge during preheating or the voltage applied to the gauge immediately after being set in the high temperature characteristic adjusting device is measured, and the measured voltage is applied to the gauge by a stabilized power supply. Supply.
【０００５】[0005]
【作用】半導体式圧力センサを予備加熱装置から取り出
し、高温特性調整装置にセットして、セラミックキバン
上に形成する厚膜抵抗をトリミングして特性調整するが
熱容量の小さいサーミスタは、常温の空気にさらされて
温度が下がる。その結果サーミスタ抵抗値が増加するた
め、ゲージに印加される電圧が低下し、出力特性が変化
する。ここでゲージ温度は熱容量が大きいため、温度変
化が小さく出力特性変化に与える影響は少ない。そこで
予備加熱中または高温ゼロ点調整装置にセット直後のゲ
ージに印加されている電圧を測定し、測定電圧と同値電
圧を安定化電源によりゲージへ供給する。その結果、サ
ーミスタが常温の空気にさらされて温度が下がって、セ
ンサからゲージに印加される電圧が低下しても、安定化
電源により初期ゲージ印加電圧が供給されるため、高温
特性調整時に、出力特性は変化しなくなる。[Function] The semiconductor pressure sensor is taken out of the preheating device, set in the high temperature characteristic adjusting device, and the thick film resistor formed on the ceramic kiban is trimmed to adjust the characteristic, but the thermistor with a small heat capacity is The temperature drops when exposed. As a result, the thermistor resistance value increases, so that the voltage applied to the gauge decreases and the output characteristics change. Since the gauge temperature has a large heat capacity, the temperature change is small and the influence on the output characteristic change is small. Therefore, the voltage applied to the gauge during preheating or immediately after being set in the high-temperature zero-point adjusting device is measured, and the same voltage as the measured voltage is supplied to the gauge by the stabilizing power supply. As a result, even if the temperature of the thermistor is exposed to normal temperature air and the temperature drops and the voltage applied to the gauge from the sensor drops, the initial gauge applied voltage is supplied by the stabilized power supply, so when adjusting the high temperature characteristics, The output characteristics will not change.
【０００６】[0006]
【実施例】以下、本発明の一実施例を図１と図２で説明
する。圧力信号を電気信号に変換する半導体歪式ゲージ
１は、シリコンチップ表面に４ケの拡散抵抗２が配置さ
れており導体パターンでブリッジに配線する。更に、裏
面は化学薬品によりダイアフラムに加工する。ダイアフ
ラムに圧力信号が印加されるブリッジ中点電位にゲージ
の微小電気信号が発生する。前記微小電気信号を増幅す
るための増幅回路を厚膜抵抗３と演算増幅器４及び導体
５で、また温度補償回路を厚膜抵抗３と感熱素子例えば
サーミスタ６と導体５で混成集積回路７に形成する。前
記ゲージ１と混成集積回路７をプラスチック材のベース
８へ接着固定し更に、ターミナルを有するハウジング９
へ接着剤１０で固定する。混成集積回路７上にはウェル
ディングパッド１１を設け、ゲージのリードフレームと
ハウジング９のリードフレームからのワイヤ１２を溶接
する。その後センサ出力電圧調整をする。調整はまず常
温で感度を決めるスパン調整をＲ３抵抗で行い更に、ゼ
ロ点を決めるゼロ点調整をＲ７抵抗で行う。その後、高
温にしてゼロ点調整をＲＺ３抵抗で行うが、この際、本
発明の調整方法を採用する。加熱装置で予備加熱したセ
ンサを高温ゼロ点調整トリマー装置へセットする。セッ
トする治具は、加熱出来る構造の物を使用する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. A semiconductor strain type gauge 1 for converting a pressure signal into an electric signal has four diffusion resistors 2 arranged on the surface of a silicon chip and is wired to a bridge with a conductor pattern. Further, the back surface is processed into a diaphragm with a chemical. A minute electric signal of the gauge is generated at the bridge midpoint potential where the pressure signal is applied to the diaphragm. An amplifier circuit for amplifying the minute electric signal is formed in the hybrid integrated circuit 7 by the thick film resistor 3, the operational amplifier 4 and the conductor 5, and a temperature compensation circuit is formed by the thick film resistor 3, the heat sensitive element such as the thermistor 6 and the conductor 5. To do. The gauge 1 and the hybrid integrated circuit 7 are bonded and fixed to a plastic base 8 and a housing 9 having a terminal is provided.
Then, it is fixed with an adhesive 10. A welding pad 11 is provided on the hybrid integrated circuit 7, and the lead frame of the gauge and the wire 12 from the lead frame of the housing 9 are welded. After that, the sensor output voltage is adjusted. For the adjustment, first, the span adjustment that determines the sensitivity at room temperature is performed with the R3 resistor, and further the zero point adjustment that determines the zero point is performed with the R7 resistor. After that, the temperature is raised to zero and the zero point adjustment is performed with the RZ3 resistor, and at this time, the adjustment method of the present invention is adopted. The sensor preheated by the heating device is set in the high temperature zero-point trimmer device. Use a jig that can be heated for the jig to be set.
【０００７】センサを高温ゼロ点調整トリマー装置へセ
ット直後のゲージ端子Ｔ１とグランド間の電位を電圧計
１３で測定し、それと同値の電圧を安定化電源１４でゲ
ージ端子Ｔ１とグランド間へ印加する。この状態でＲＺ
３抵抗をトリミングする。安定化電源１４の電圧設定
は、コンピュータを使用することにより自動化すること
も可能である。The potential between the gauge terminal T1 and the ground immediately after being set in the high temperature zero-point trimmer device is measured by the voltmeter 13, and a voltage of the same value is applied between the gauge terminal T1 and the ground by the stabilizing power supply 14. . RZ in this state
Trimming the resistor. The voltage setting of the stabilized power supply 14 can be automated by using a computer.
【０００８】調整終了後、混成集積回路７上に充填材１
５を注入し硬化後、更にハウジング９に接着剤１０を塗
布しカバー１６を接着固定する。After the adjustment is completed, the filler 1 is placed on the hybrid integrated circuit 7.
After injecting 5 and curing, the adhesive 10 is further applied to the housing 9 and the cover 16 is adhesively fixed.
【０００９】[0009]
【発明の効果】本発明によれば、半導体式圧力センサの
高温特性調整精度を向上させることができる。According to the present invention, the high temperature characteristic adjustment accuracy of the semiconductor type pressure sensor can be improved.
【図１】本発明の一実施例の回路構成図である。FIG. 1 is a circuit configuration diagram of an embodiment of the present invention.
【図２】本発明の一実施例の構造例を示す図である。FIG. 2 is a diagram showing a structural example of an embodiment of the present invention.
１…ゲージ、２…拡散抵抗、３…厚膜抵抗、４…演算増
幅器、５…導体、６…サーミスタ、７…混成集積回路、
８…ベース、９…ハウジング、１０…接着剤、１１…ウ
ェルディングパッド、１２…ワイヤ、１３…電圧計、１
４…安定化電源、１５…充填材、１６…カバー。1 ... Gauge, 2 ... Diffusion resistance, 3 ... Thick film resistance, 4 ... Operational amplifier, 5 ... Conductor, 6 ... Thermistor, 7 ... Hybrid integrated circuit,
8 ... Base, 9 ... Housing, 10 ... Adhesive, 11 ... Welding pad, 12 ... Wire, 13 ... Voltmeter, 1
4 ... stabilized power supply, 15 ... filling material, 16 ... cover.
Claims (1)
拡散抵抗を配置し、更に前記半導体基板の裏面を加工し
てダイアフラムを形成したゲージと温度補償素子と増幅
回路を具備した半導体式圧力センサにおいて、予備加熱
中または高温特性調整装置にセット直後のゲージに印加
されている電圧を測定し、安定化電源により前記測定電
圧と同値の電圧をゲージに供給した状態で圧力センサの
高温特性調整することを特徴とする半導体式圧力センサ
の温度特性調整方法。1. A semiconductor pressure sensor comprising at least one diffusion resistor arranged on the front surface of a semiconductor substrate, and further comprising a gauge having a diaphragm formed by processing the back surface of the semiconductor substrate, a temperature compensation element, and an amplifier circuit. In the above, the voltage applied to the gauge during preheating or immediately after being set in the high temperature characteristic adjusting device is measured, and the high temperature characteristic of the pressure sensor is adjusted while the gauge is supplied with a voltage of the same value as the measured voltage by the stabilized power supply. A method for adjusting temperature characteristics of a semiconductor pressure sensor, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6172295A JPH0835898A (en) | 1994-07-25 | 1994-07-25 | Temperature characteristic regulating method for semiconductor type pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6172295A JPH0835898A (en) | 1994-07-25 | 1994-07-25 | Temperature characteristic regulating method for semiconductor type pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0835898A true JPH0835898A (en) | 1996-02-06 |
Family
ID=15939286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6172295A Pending JPH0835898A (en) | 1994-07-25 | 1994-07-25 | Temperature characteristic regulating method for semiconductor type pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0835898A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7062287B2 (en) | 1999-09-22 | 2006-06-13 | Fujitsu Limited | Transmission power control apparatus |
-
1994
- 1994-07-25 JP JP6172295A patent/JPH0835898A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7062287B2 (en) | 1999-09-22 | 2006-06-13 | Fujitsu Limited | Transmission power control apparatus |
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