JPH0826480B2 - Plating device and plating metal supply method - Google Patents
Plating device and plating metal supply methodInfo
- Publication number
- JPH0826480B2 JPH0826480B2 JP1074011A JP7401189A JPH0826480B2 JP H0826480 B2 JPH0826480 B2 JP H0826480B2 JP 1074011 A JP1074011 A JP 1074011A JP 7401189 A JP7401189 A JP 7401189A JP H0826480 B2 JPH0826480 B2 JP H0826480B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- metal
- tank
- solution
- amount adjusting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
- C25D21/14—Controlled addition of electrolyte components
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Automation & Control Theory (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
Description
【発明の詳細な説明】 〈産業上の利用分野〉 この発明はメッキ金属量調整槽を用いたメッキ装置及
びメッキ金属の補給方法に関する。TECHNICAL FIELD The present invention relates to a plating apparatus using a plating metal amount adjusting tank and a method for supplying plating metal.
〈従来の技術〉 ICリードフレームは、そのアイランド近辺に施される
貴金属（金、銀等）の部分メッキとは別に、その外部リ
ード部へ卑金属（錫、半田等）のメッキが施される場合
がある。これらの卑金属メッキは貴金属メッキと同様に
不溶性陽極を使用するのが一般的である。そして、現在
最も一般的な卑金属メッキとして有機スルホン酸の半田
メッキを例にとると、そのメッキ液中における金属濃度
は40〜100g/程度と高く、この高濃度を維持するため
にメッキ液中にメッキ金属を補給する必要がある。メッ
キ金属を供給する一般的な方法としては次の２種類があ
る。<Prior Art> When an IC lead frame is plated with a base metal (tin, solder, etc.) on its external leads, in addition to the partial plating of noble metal (gold, silver, etc.) that is applied near the island. There is. These base metal platings generally use an insoluble anode as in the precious metal plating. Taking organic sulfonic acid solder plating as an example of the most common base metal plating at present, the metal concentration in the plating solution is as high as 40 to 100 g /, and in order to maintain this high concentration, It is necessary to replenish the plating metal. There are the following two general methods for supplying the plating metal.
第１は有機スルホン酸の錫或いは鉛溶液を補給する方
法であり、第２は粉末状の酸化錫（SuO）或いは酸化鉛
（PbO）を直接補給する方法である。The first is a method of replenishing tin or lead solution of organic sulfonic acid, and the second is a method of directly replenishing powdery tin oxide (SuO) or lead oxide (PbO).
〈発明が解決しようとする課題〉 しかしながらこのような従来の補給方法にあっては、
第１方法の場合では、市販されている溶液の金属濃度が
50〜200g/と比較的低濃度であるため、メッキ液中の
金属濃度を維持するためには、多量のメッキ液を汲み出
さなければならず、作業性に難点があった。更に、市販
の溶液は一般に高価であり、ランニングコストの大幅な
上昇を招いていた。<Problems to be Solved by the Invention> However, in such a conventional replenishment method,
In the case of the first method, the metal concentration of the commercially available solution is
Since the concentration is relatively low at 50 to 200 g /, a large amount of plating solution must be pumped out in order to maintain the metal concentration in the plating solution, which is a workability problem. Further, commercially available solutions are generally expensive, which causes a significant increase in running cost.
また、第２の方法にあっては、粉末なので取扱いが面
倒で且つ補給の自動化が困難である。そして、酸化錫
（SnO）は一部不溶解性の酸化物を含んでいるために溶
けづらく、酸化鉛（PbO）は劇物なので労働衛生上好ま
しくないという問題点もある。Further, in the second method, since it is powder, it is troublesome to handle and it is difficult to automate replenishment. Further, tin oxide (SnO) is difficult to dissolve because it partially contains an insoluble oxide, and lead oxide (PbO) is a deleterious substance, which is not preferable in terms of occupational health.
この発明はこのような従来技術に着目してなされたも
のであり、メッキ金属の補給が容易で且つランニングコ
ストの低減化を図ることができるメッキ装置及びメッキ
金属の補給方法を提供せんとするものである。The present invention has been made in view of such a conventional technique, and an object thereof is to provide a plating apparatus and a plating metal replenishing method capable of easily replenishing the plating metal and reducing the running cost. Is.
〈課題を解決するための手段及び作用〉 この発明は、上記の目的を達成するために、メッキ金
属量調整槽を用い、このメッキ金属量調整槽にてメッキ
液の管理を行うものである。この発明で用いられるメッ
キ金属量調整槽は、メッキ金属と同種の金属である可溶
性陽極と、内部に金属イオンを含まない電解液と陰極を
備え少なくとも一部がアニオン交換膜にて形成されてい
るカソードセルと、をメッキ液中に配したものである。
すなわち、このメッキ金属量調整槽においては、一方の
可溶性陽極からメッキ金属がメッキ液中に溶出すること
になるが、他方の陰極が一部アニオン交換膜にて形成さ
れたカソードセルにて囲まれているので、溶出したメッ
キ金属（イオン）は陰極表面に析出せずメッキ液中にそ
のまま存在することとなる。このように、メッキ金属量
調整槽のメッキ液中には順次可溶性陽極からのメッキ金
属の溶出があるため、メッキ金属量調整槽中のメッキ液
は常にメッキ金属濃度が高い状態にある。尚、カソード
セル内の電解液は何ら金属イオンを含まないので陰極上
に金属が析出することはない。<Means and Actions for Solving the Problem> In order to achieve the above object, the present invention uses a plating metal amount adjusting tank, and controls the plating solution in the plating metal amount adjusting tank. The plating metal amount adjusting tank used in the present invention comprises a soluble anode which is the same kind of metal as the plating metal, an electrolytic solution containing no metal ions and a cathode, and at least a part of which is formed of an anion exchange membrane. The cathode cell and the cathode cell are arranged in a plating solution.
That is, in this plating metal amount adjusting tank, the plating metal is eluted from the soluble anode on one side into the plating solution, but the cathode on the other side is partially surrounded by the cathode cell formed by the anion exchange membrane. Therefore, the eluted plating metal (ions) does not deposit on the cathode surface and remains in the plating solution as it is. As described above, since the plating metal in the plating metal amount adjusting tank is gradually eluted from the soluble anode, the plating liquid in the plating metal amount adjusting tank always has a high concentration of plating metal. Since the electrolytic solution in the cathode cell does not contain any metal ions, no metal is deposited on the cathode.
従って、このメッキ金属量調整槽をメッキ液槽を介し
て高速度メッキボックスに接続してメッキ装置を構成す
れば、高濃度のメッキ金属を含んだメッキ液を高速度メ
ッキボックスに循環・供給することができ、メッキ金属
の補給を行なえる。また、メッキ金属量調整槽の整流器
を独立で或いは高速度メッキボックスの整流器と連動さ
せることにより、高速度メッキボックスにて消費される
メッキ金属量に応じたメッキ金属を自動制御で補給する
ことができる。Therefore, if this plating metal amount adjusting tank is connected to the high-speed plating box via the plating solution tank to configure a plating apparatus, the plating solution containing high-concentration plating metal is circulated and supplied to the high-speed plating box. It is possible to supply plated metal. Further, by independently or in conjunction with the rectifier of the high speed plating box, the rectifier of the plating metal amount adjusting tank can automatically supply the plating metal according to the amount of plating metal consumed in the high speed plating box. it can.
〈実施例〉 以下この発明の好適な実施例を図面に基づいて説明す
る。<Embodiment> A preferred embodiment of the present invention will be described below with reference to the drawings.
第１図のメッキ装置自体は本発明に係るものではな
く、第２図に示した本発明に係るメッキ装置の理解を助
けるために説明するものである。１は半田メッキ用のメ
ッキ処理槽で、内部に有機スルホン酸の半田メッキ液Ｓ
が入っている。２は白金・チタン製の不溶性陽極で、３
は被メッキ物（陰極）である。そして、４がメッキ金属
量調整槽であり、内部に先のメッキ処理槽１と同じメッ
キ液Ｓが入っていると共に、メッキ金属である半田製の
可溶性陽極５とカソードセル６とが配されている。この
カソードセル６内には、析出する金属イオンを何ら含ま
ない電解液７が入っており、この電解液７内にステンレ
ス製の陰極８が配されている。また、このカソードセル
６は可溶性陽極５側がアニオン交換膜９にて形成されて
おり、メッキ液Ｓと電解液７とを電気的に導通状態と
し、且つこのアニオン交換膜９にてメッキ液Ｓ内の陽イ
オンがカソードセル６内へ侵入できないようになってい
る。そして、このメッキ金属量調整槽４と先のメッキ処
理槽１とは、連結パイプ10及びポンプ11を介して接続さ
れており、互いのメッキ液Ｓを各々他方側へ循環・供給
できるようになっている。12は整流器で、メッキ処理槽
１とメッキ金属量調整槽４とで共有している。The plating apparatus of FIG. 1 itself is not related to the present invention, but is described to help understanding of the plating apparatus according to the present invention shown in FIG. Reference numeral 1 is a plating treatment tank for solder plating, in which an organic sulfonic acid solder plating solution S is contained.
Is included. 2 is an insoluble anode made of platinum and titanium, 3
Is an object to be plated (cathode). Reference numeral 4 denotes a plating metal amount adjusting tank, which contains the same plating solution S as the plating processing tank 1 described above, and in which a soluble anode 5 made of solder, which is the plating metal, and a cathode cell 6 are arranged. There is. The cathode cell 6 contains an electrolytic solution 7 that does not contain any metal ions to be deposited, and a cathode 8 made of stainless steel is arranged in the electrolytic solution 7. Further, in the cathode cell 6, the soluble anode 5 side is formed by the anion exchange membrane 9 so that the plating solution S and the electrolyte solution 7 are electrically connected to each other, and the anion exchange membrane 9 allows the inside of the plating solution S to be in contact. The cations of No. 1 cannot enter the cathode cell 6. The plating metal amount adjusting tank 4 and the preceding plating treatment tank 1 are connected via a connecting pipe 10 and a pump 11 so that the respective plating solutions S can be circulated and supplied to the other side. ing. A rectifier 12 is shared by the plating treatment tank 1 and the plating metal amount adjusting tank 4.
次に作用を説明する。メッキ処理槽１内のメッキ液Ｓ
では、メッキ液Ｓ中の錫イオン（Sn2+）及び鉛イオン
（Pb2+）がどんどん被メッキ物（陰極）３上へ還元され
て析出するので、メッキ金属（即ち錫と鉛）の濃度が低
下する。これに対し、メッキ金属量調整槽４では半田製
の可溶性陽極５から錫イオン（Sn2+）及び鉛イオン（Pb
2+）がどんどん酸化されて溶出すると共に、陰極８がア
ニオン交換膜９を含むカソードセル６にて囲まれている
ことから、溶出した錫イオン（Sn2+）及び鉛イオン（Pb
2+）がそのままメッキ液Ｓ中に存在しつづけメッキ金属
の濃度が上がる。メッキ処理槽１とメッキ金属量調整槽
４とのメッキ液Ｓは、ポンプ11付きの連結パイプ10を介
して互いに循環・供給し合い、同じメッキ液Ｓを共有し
た状態としているので、ちょうどメッキ処理槽１側で消
費されたメッキ金属の分だけメッキ金属量調整槽４側か
らメッキ処理槽１へ補給されることとなる。しかも、共
用の整流器12からは同じ電流が流れているので、メッキ
処理槽１で消費されるメッキ金属の量とメッキ金属量調
整槽４側で溶出するメッキ金属との量はほぼ釣り合うこ
ととなり、メッキ液Ｓのメッキ金属濃度はほぼ一定値が
維持される。Next, the operation will be described. Plating solution S in plating tank 1
Then, since tin ions (Sn 2+ ) and lead ions (Pb 2+ ) in the plating solution S are gradually reduced and deposited on the object to be plated (cathode) 3, the concentration of the plating metal (that is, tin and lead) is increased. Is reduced. On the other hand, in the plating metal amount adjusting bath 4, the tin ion (Sn 2+ ) and the lead ion (Pb 2
2+ ) is gradually oxidized and eluted, and since the cathode 8 is surrounded by the cathode cell 6 including the anion exchange membrane 9, the eluted tin ion (Sn 2+ ) and lead ion (Pb
2+ ) continues to exist in the plating solution S as it is and the concentration of the plating metal increases. The plating solutions S in the plating processing tank 1 and the plating metal amount adjusting tank 4 are circulated and supplied to each other through the connecting pipe 10 with the pump 11, and the same plating solution S is shared. The plating metal consumed in the tank 1 side is supplied to the plating treatment tank 1 from the plating metal amount adjusting tank 4 side. Moreover, since the same current is flowing from the shared rectifier 12, the amount of the plating metal consumed in the plating treatment tank 1 and the amount of the plating metal eluted in the plating metal amount adjusting tank 4 side are almost balanced, The plating metal concentration of the plating solution S is maintained at a substantially constant value.
但し、実際の生産工程では、前処理工程からの液の持
込み及びメッキ液Ｓの持出しがあり、且つメッキ処理槽
１とメッキ金属量調整槽４との電流効率の相違から、メ
ッキ液Ｓのメッキ金属濃度を厳密に一定化するには、メ
ッキ処理槽１とメッキ金属量調整槽４とにそれぞれ整流
器を独立して備え、各整流器ごとに適切な電流を流すの
が最も確実である。However, in the actual production process, since there is a carry-in of the liquid from the pretreatment process and a carry-out of the plating liquid S, and the difference in the current efficiency between the plating treatment tank 1 and the plating metal amount adjusting tank 4, the plating solution S is plated. In order to make the metal concentration strictly constant, it is most certain that the plating tank 1 and the plating metal amount adjusting tank 4 are independently provided with rectifiers and an appropriate current is supplied to each rectifier.
第２図は本発明のメッキ装置を示す図であり、前記第
１図の構造を基にして説明する。尚、第１図の構造と共
通する部分には同一の符号を付し、重複する説明は省略
する。本発明では、高速度メッキボックス13とメッキ金
属量調整槽４とをメッキ液槽14を介して接続し、高速度
メッキボックス13とメッキ金属量調整槽14にそれぞれ独
立した整流器15、16を備えたものである。高速度メッキ
ボックス13は、不溶性陽極兼用のメッキ液噴射ノズル17
と、被メッキ物18をマスク19に対して押付ける押圧手段
20とを備える。メッキ液槽14はこの高速度メッキボック
ス13へメッキ液Ｓを送るために付設されたものであり、
メッキ液Ｓを噴射ノズル17へ循環・供給自在であると共
に、噴射後のメッキ液Ｓを回収できるようになってい
る。また、このメッキ液槽14とメッキ金属量調整槽４と
は第１図の場合と同様に接続されている。従って、高速
度メッキボックス13におけるメッキ処理が進むにつれ、
メッキ液槽14内のメッキ金属濃度は低下しようとする
が、メッキ金属量調整槽４からメッキ金属を含んだメッ
キ液Ｓが循環・供給されるので、メッキ液槽14内のメッ
キ液Ｓのメッキ金属濃度は一定に保たれる。尚、メッキ
液槽14を介在せず、高速度メッキボックス13とメッキ金
属量調整槽４とを直結することも自由である。FIG. 2 is a diagram showing a plating apparatus of the present invention, which will be described based on the structure of FIG. The same parts as those in the structure of FIG. 1 are designated by the same reference numerals, and the duplicated description will be omitted. In the present invention, the high speed plating box 13 and the plating metal amount adjusting tank 4 are connected via the plating liquid tank 14, and the high speed plating box 13 and the plating metal amount adjusting tank 14 are provided with independent rectifiers 15 and 16, respectively. It is a thing. The high-speed plating box 13 is a plating solution injection nozzle 17 that also serves as an insoluble anode.
And pressing means for pressing the object to be plated 18 against the mask 19
With 20 and. The plating solution tank 14 is attached to send the plating solution S to the high speed plating box 13.
The plating solution S can be freely circulated and supplied to the spray nozzle 17, and the plating solution S after spraying can be collected. The plating liquid tank 14 and the plating metal amount adjusting tank 4 are connected in the same manner as in the case of FIG. Therefore, as the plating process in the high speed plating box 13 progresses,
Although the concentration of the plating metal in the plating solution tank 14 tends to decrease, the plating solution S containing the plating metal is circulated and supplied from the plating metal amount adjusting tank 4, so that the plating solution S in the plating solution tank 14 is plated. The metal concentration is kept constant. Incidentally, it is also possible to directly connect the high speed plating box 13 and the plating metal amount adjusting tank 4 without interposing the plating liquid tank 14.
〈発明の効果〉 この発明は以上説明してきた如き内容のものなので、
メッキ液へのメッキ金属の補給を容易に行なえると共
に、メッキ金属補給に関するランニングコストの低減化
を図ることができるという効果がある。また、メッキ金
属濃度の自動制御化を簡単に行なえるという効果もあ
る。<Effect of the Invention> Since the present invention has the contents described above,
There is an effect that the plating metal can be easily replenished to the plating solution, and the running cost related to the plating metal replenishment can be reduced. Further, there is an effect that automatic control of the plating metal concentration can be easily performed.
第１図は本発明を説明するためのメッキ装置を示す説明
図、 第２図は本発明に係る高速度メッキボックスにメッキ金
属量調整槽を接続したメッキ装置を示す説明図である。 １…メッキ処理槽 ２…不溶性陽極 ４…メッキ金属量調整槽 ５…可溶性陽極 ６…カソードセル ７…電解液 ８…陰極 12、15、16…整流器 13…高速度メッキボックス 14…メッキ液槽 17…噴射ノズル（不溶性陽極） Ｓ…メッキ液FIG. 1 is an explanatory view showing a plating apparatus for explaining the present invention, and FIG. 2 is an explanatory view showing a plating apparatus in which a plating metal amount adjusting tank is connected to a high speed plating box according to the present invention. 1 ... Plating tank 2 ... Insoluble anode 4 ... Plating metal amount adjusting tank 5 ... Soluble anode 6 ... Cathode cell 7 ... Electrolyte solution 8 ... Cathode 12, 15, 16 ... Rectifier 13 ... High speed plating box 14 ... Plating solution tank 17 ... Injection nozzle (insoluble anode) S ... Plating liquid
Claims (2)
と、内部に金属イオンを含まない電解液と陰極を備え少
なくとも一部がアニオン交換膜にて形成されているカソ
ードセルと、をメッキ液中に配した構造のメッキ金属量
調整槽を、メッキ液槽を介して、不溶性陽極を備えた高
速度メッキボックスに接続し、メッキ金属量調整槽内の
メッキ液をメッキ液槽を介して高速度メッキボックスへ
循環・供給自在なメッキ装置。1. A plating solution comprising a soluble anode which is a metal of the same kind as the plating metal, an electrolyte solution containing no metal ions inside and a cathode cell at least a part of which is formed of an anion exchange membrane. The plating metal amount adjusting tank with the structure arranged inside is connected to the high-speed plating box equipped with an insoluble anode via the plating liquid tank, and the plating liquid in the plating metal amount adjusting tank is raised via the plating liquid tank. A plating device that can be circulated and supplied to the speed plating box.
消費されるメッキ金属量に応じてメッキ金属量調整槽の
可溶性陽極よりメッキ金属をメッキ液中に溶出せしめ、
そして該メッキ金属を溶出せしめたメッキ液をメッキ液
槽を介して高速度メッキボックスへ循環・供給せしめる
メッキ金属の補給方法。2. The plating metal is eluted from the soluble anode of the plating metal amount adjusting tank into the plating solution according to the amount of plating metal consumed in the high speed plating box according to claim 1.
Then, a plating metal replenishment method in which a plating solution in which the plating metal is eluted is circulated and supplied to a high-speed plating box through a plating solution tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1074011A JPH0826480B2 (en) | 1989-03-28 | 1989-03-28 | Plating device and plating metal supply method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1074011A JPH0826480B2 (en) | 1989-03-28 | 1989-03-28 | Plating device and plating metal supply method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02254200A JPH02254200A (en) | 1990-10-12 |
| JPH0826480B2 true JPH0826480B2 (en) | 1996-03-13 |
Family
ID=13534723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1074011A Expired - Fee Related JPH0826480B2 (en) | 1989-03-28 | 1989-03-28 | Plating device and plating metal supply method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0826480B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2559935B2 (en) * | 1991-12-20 | 1996-12-04 | 日本リーロナール株式会社 | Method and apparatus for tin or tin-lead alloy electroplating using insoluble anode |
| IT1318545B1 (en) * | 2000-05-31 | 2003-08-27 | De Nora Elettrodi Spa | ELECTROLYSIS CELL FOR THE RESTORATION OF THE CONCENTRATION OF IONIMETALLIC IN ELECTRODEPOSITION PROCESSES. |
| DE102007026633B4 (en) * | 2007-06-06 | 2009-04-02 | Atotech Deutschland Gmbh | Apparatus and method for the electrolytic treatment of plate-shaped goods |
| KR100833998B1 (en) * | 2007-09-03 | 2008-05-30 | (주) 메트리젠 | Method of metal plating of fine tube inside and metal plating device of that and the fine tube metal plated inside and cannula gilded inside |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2671013B2 (en) * | 1988-06-16 | 1997-10-29 | ディップソール株式会社 | Method for supplying nickel ions in alkaline nickel or nickel alloy plating |
| JPH0270087A (en) * | 1988-09-01 | 1990-03-08 | Nippon Kinzoku Co Ltd | Method and apparatus for plating tin |
-
1989
- 1989-03-28 JP JP1074011A patent/JPH0826480B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02254200A (en) | 1990-10-12 |
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