JPH08234227A - Display device and its production - Google Patents

Abstract

PURPOSE: To provide a liquid crystal display device having a structure contributing to the improvement in production yield and reduction of the manufacturing cost by preventing the breakdown by static electricity having a high voltage generated by friction, etc., during the course of production stages. CONSTITUTION: This display device is constituted by forming projecting parts 37l, 37m in wiring parts 34c, 36d as discharge of static electricity prior to formation of short rings and selecting the positions where conductor patterns, such as signal lines of other layers, are not formed as the arranging positions of these projecting parts, thereby preventing shorting of the conductor patterns of other layers, such as signal lines, to scanning lines 33c or auxiliary capacitor lines 33d via the damage, etc., of insulating films 38 generated by the discharge.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device having a fine wiring structure such as a scanning line and a signal line in an active matrix type liquid crystal display device, and a manufacturing method thereof.

[0002]

2. Description of the Related Art In recent years, large-capacity, high-density display devices for television displays, graphic displays, etc. have been actively developed and put to practical use, particularly in liquid crystal display devices among display devices.

Not only a simple matrix type liquid crystal display device which applies a voltage in a time division manner between electrodes which face each other across a liquid crystal layer to form each pixel to drive a liquid crystal layer for display, but in recent years , MIM (metal-insulato) as a display device aiming to realize higher-definition and higher-performance image display.
A display device using an active matrix type liquid crystal display panel using an r-metal) diode or a thin film transistor (TFT) as a switching element has been developed and put into practical use.

A display device such as this active matrix type liquid crystal display device has a high image contrast, is excellent in high-speed display response to an image signal, and is capable of high quality image display without crosstalk. Utilizing these characteristics, it has come to be widely used as a display device for televisions, OA (office automation), etc., and the arrangement pitch of its pixel electrodes has become as fine as about 100 μm. . Moreover, the development of a display device with an extremely large number of pixels, which is about 1 million pixels, is underway.

[0005]

In order to promote the spread of such an active matrix type liquid crystal display device, it is necessary to reduce the price by improving the manufacturing yield. There are several ways to improve the manufacturing yield, but one of the main methods is to reduce the incidence of display defects due to electrostatic breakdown of the electrodes or the insulating layer between the electrodes in the manufacturing process. Various measures have been taken to prevent electrostatic damage.

In such a conventional active matrix type liquid crystal display device having countermeasures against electrostatic breakdown, for example, a thin film transistor is used as a switching element, a ring-shaped conductor pattern called a short ring is arranged in the peripheral portion of the array substrate. There is known a method of electrically connecting all the scanning lines to the auxiliary capacitance lines and the signal lines by providing them.

FIG. 1 is a schematic plan view of a conventional TFT array substrate in which a short ring is formed during the manufacturing process. In the figure, on the glass substrate 10,
A plurality of scanning lines 11 and an auxiliary capacitance line 12 are formed in parallel between these scanning lines 11. This auxiliary capacitance line 12
A plurality of pixel electrodes 13 arranged in a matrix on the
Are insulated from the auxiliary capacitance line 12. A plurality of signal lines 14 are formed so as to be insulated from the scanning lines 11 and the auxiliary capacitance lines 12 in directions orthogonal to each other. Each of these wirings has a scanning line inspection electrode 15 and a power supply electrode 16
And the auxiliary capacitance line inspection electrode 17 is formed. Further, the scanning line 11, the auxiliary capacitance line 12, and the signal line 14 are electrically connected by a short ring 18 formed in the peripheral portion of the array substrate.

As described above, the TFT array substrate of the active matrix type liquid crystal display device manufactured by electrically connecting all the scanning lines 11, the auxiliary capacitance lines 12 and the signal lines 14 by the short ring 18 during the manufacturing process. Even if static electricity is charged after the short ring is formed,
Since it is possible to prevent a high potential difference between the wirings, electrostatic breakdown does not occur.

However, in practice, static electricity is often charged in the process before the formation of the short ring, and even in such a case, a high potential difference is generated between the wirings, so that the process of forming the short ring on the TFT array substrate is performed. Electrostatic breakdown occurs in the wiring structure and insulating film formed up to this point.

For example, the short ring 18 shown in FIG.
In the process before the formation of the scanning lines 11 and the auxiliary capacitance lines 12
And the inspection electrodes 15 and 17 connected to these wirings are formed. After this, a photo that forms another pattern
After applying a resist for etching on the substrate 10, heating is performed on a flat stage to evaporate the solvent of the resist. After the heating step, for example, as shown in FIG. 9, the TFT array substrate 10 is moved while being floated above the conveyor belt 22 on the conveyor belt 22 provided with a plurality of conveyor rollers 21 to the next step. Transfer. During this floating and transfer, static electricity of, for example, several thousand volts is charged between the TFT array substrate 10 and the conveyor belt 22 by peeling charging. At this time, the metal arm 23 attached to the conveyor belt 22 as shown in FIG.
The transfer position of the TFT array substrate 10 is corrected by this. At this time, the metal arm 23 and the TFT array substrate 10 are
The electric charges accumulated in the TFT array substrate 10 due to the contact with the abruptly move toward the metal arm 23, so that the wiring structure and the insulating film of the TFT array substrate 10 are electrostatically destroyed.

That is, as shown in FIG. 10, when a part 24 of the TFT array substrate 10 is charged with negative static electricity of several thousand volts and the metal arm 23 in contact with this is connected to the ground level, The charged charge rapidly moves between the charged portion 24 of the TFT array substrate 10 and the metal arm 23.

At this time, for example, the TFT array substrate 10
Scanning line 11 arranged at a position close to the charged portion 24 of
The electrostatic charges on a and the auxiliary capacitance line 12a pass through the scanning line 11b arranged between the metal arm 23 and the metal arm 23 and rapidly move in an insulating film such as an interlayer insulating film or in the thin film semiconductor layer 26 in a discharge state. To do. Here, in FIG. 10, the position of the signal line 14a to be formed in the subsequent step is indicated by a two-dot chain line.

As a result of this discharge, for example, as shown in FIG. 11, a discharge is generated between the scan line 11a and the metal arm 23, and the insulating film 25 and the thin film semiconductor layer 26 formed on the scan line 11a are discharged. , Pinhole-like or tear-like damage 27 due to the electrostatic breakdown along the part where the discharge occurs
Occurs. When the signal line 14a is formed on the damage 27 in a later step, for example, as shown in FIG. 12, the signal line 14a and the scanning line 11a are short-circuited through the damage 27, and the display after the completion is completed. During operation, display defects such as line defects occur in the pixel column corresponding to this portion.

Since the above short ring hinders the display operation, it is necessary to disconnect all of them after the array substrate is completed. Further, after the short ring is cut off, it is impossible to prevent the occurrence of display failure due to electrostatic breakdown.

Further, instead of using the above-mentioned short ring, the adjacent portions of the input terminals of the scanning line and the signal line are formed as a coupling capacitance with each other only in the manufacturing process, so that the electrostatic charges in the wiring portion are discharged and insulated. There are ways to prevent destruction. However, even with this method, the coupling capacitance portion hinders the display operation as in the short ring,
It is necessary to separate all of them after the array substrate is completed, which is also a cause of display failure due to subsequent electrostatic breakdown and an increase in manufacturing cost.

Therefore, an object of the present invention is to prevent electrostatic breakdown due to static electricity charged even before the step of forming the short ring and after the short ring is cut off, and to reduce the production rate of defective display products. And to realize a display device such as a highly reliable active matrix type liquid crystal display device with good productivity and low cost.

[0017]

A display device according to the present invention comprises a plurality of first insulating substrates arranged substantially parallel to each other on a first insulating substrate.
A first electrode substrate including electrode wirings and a plurality of pixel electrodes electrically coupled to the first electrode wirings via switch elements and arranged in a matrix; and the pixel arranged on a second insulating substrate. A second electrode substrate including a counter electrode facing the electrode; a light modulation layer held between the pixel electrode and the counter electrode; at least one of the adjacent first electrode wirings faces the other It has at least one discharge protrusion.

Further, in the display device of the present invention, the plurality of scanning lines and the plurality of auxiliary capacitance lines arranged side by side on the first insulating substrate and the layer in which the scanning lines and the auxiliary capacitance lines are formed are provided. Signal lines arranged in different layers via an insulating film and arranged so as to intersect with the scanning lines and the auxiliary capacitance lines, and the plurality of scanning lines and the plurality of signal lines intersect with each other. A pixel electrode array substrate provided with a pixel electrode arranged in each of the grids; a counter substrate having a counter electrode facing the pixel electrode array substrate formed on a second insulating substrate; In a display device including a light modulation layer held between the pixel electrode array substrate and the counter substrate, a planar pattern is formed at an acute angle of a right angle or less, and the charge charged in the scanning line and the The charge on the auxiliary capacitance line Between the scanning lines and the auxiliary capacitance lines which are in contact with each other, the protruding portions which are opposed to each other in a non-contact manner so as to be capable of discharging avoid the portion where both the scanning lines and the signal lines intersect with each other, and the scanning lines and the auxiliary capacitance And a line, respectively.

Further, the projection portion extends from the scanning line and the auxiliary capacitance line and is formed at a position outside the region where the pixel electrodes are arranged, and the scanning line connection pad and the auxiliary capacitance line connection pad are formed. Alternatively, it is attached to the scanning line inspection pad and the auxiliary capacitance line inspection pad connected thereto.

Further, in the above display device, the protrusions are one corner of the scanning line connection pad and one corner of the auxiliary capacitance line connection pad, and the corners are electrically charged to the scanning line. It is characterized in that the electric charges charged in the auxiliary capacitance line are arranged so as to be capable of discharging in a non-contact manner between the scanning line and the auxiliary capacitance line which are adjacent to each other.

Further, in the above display device, the planar shape of the tip end portion of the protrusion is formed at an acute angle of 30 degrees or more and 90 degrees or less, and the distance between the tips of the adjacent protrusions is 4 μm. It is characterized in that they are arranged at a distance of 20 μm or less.

Further, according to the method of manufacturing a display device of the present invention, a plurality of scanning lines and a plurality of auxiliary capacitance lines are formed on the first insulating substrate, and a layer having the scanning lines and the auxiliary capacitance lines is formed. In each lattice, a signal line is formed in a different layer so as to intersect with the scanning line and the auxiliary capacitance line through an insulating film, and the plurality of scanning lines and the plurality of signal lines intersect each other. Forming a pixel electrode array substrate by arranging pixel electrodes on the pixel electrode array substrate, and disposing a counter electrode having a counter electrode on a second insulating substrate facing the pixel electrode array substrate. And a counter substrate and a step of sandwiching a light modulation layer between the counter substrate and the counter substrate. In the method for manufacturing a display device, the planar pattern is charged at an acute angle equal to or less than a right angle, and the charges charged on the scanning lines and the auxiliary capacitance lines are charged. To charge adjacent A non-contacting dischargeable opposing protrusion between the inspection line and the auxiliary capacitance line is provided on the scanning line and the auxiliary capacitance line while avoiding a portion where both the scanning line and the signal line intersect. It is characterized in that it includes a step of forming each.

Further, in the above-mentioned manufacturing method, the projection line is extended from the scanning line and the auxiliary capacitance line, and the scanning line connection pad is formed at a position outside the region where the pixel electrodes are arranged. And the auxiliary capacitance line connection pad or the scanning line inspection pad and auxiliary capacitance line inspection pad connected to the connection pad.

In general, the charge distribution in the conductor is concentrated on a portion having a small radius of curvature at the boundary surface with the outside of the conductor or, in the case of a planar distribution, a portion having a small acute angle of the pattern. Therefore, the charge distributions of the scanning lines and the auxiliary capacitance lines are concentrated on the tips of the protrusions formed on the scanning lines and the auxiliary capacitance lines according to the present invention. As a result, a strong electric field is formed between the protrusions arranged in a pattern that is in non-contact with each other, and discharge easily occurs between them.

Then, for example, charges are accumulated in the scanning lines and the auxiliary capacitance lines during the rubbing alignment treatment of the alignment film.
Before the electric charge abruptly moves due to contact with an operator's hand or a metal arm for transportation during transportation during movement of the TFT array substrate in a process, discharge is immediately performed between the protrusions. . And in other parts, discharge is prevented. Furthermore, since the protruding portion is formed at a position where the conductor pattern of the other layer is not formed,
The conductor pattern is not short-circuited with the scanning line and the auxiliary capacitance line due to damage to the insulating film caused by the discharge. Therefore, it is possible to prevent the occurrence of defective display products due to interlayer short circuit due to electrostatic breakdown.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments in which the display device according to the present invention is applied to an active matrix type liquid crystal display device will be described below in detail with reference to the drawings. FIG. 1 is a plan view showing a part of an end portion of a TFT array substrate of an active matrix type liquid crystal display device manufactured according to this embodiment,
Here, only the scanning lines and the storage capacitance lines are shown.

A transparent insulating substrate 31 such as a glass substrate
A plurality of scanning lines 32a, 32b, 32c, ... And a plurality of auxiliary capacitance lines 33a, 33b, 33c, 33d ... Are arranged in parallel and alternately adjacent to each other. Scan line 32
The scanning line inspection pad 34 is provided on each of a, 32b, and 32c.
a, 34b, 34c and the scanning line connection pad 3 at the tip
5a, 35b, 35c are formed. Further, the auxiliary capacitance lines 33a, 33b, 33c and 33d are provided at their tips with auxiliary capacitance line connection / inspection pads 36a, 36b and 36.
c, 36d are formed.

Between the adjacent scanning line inspection pad and auxiliary capacitance line connecting / inspection pad, that is, the pad 36.
a and 34a, 34a and 36b, 36b and 34b, 34b
And 36c, 36c and 34c, 34c and 36d, the protrusions 37a to 37j are formed in a pattern in which the tips are substantially triangular with an acute angle of 60 degrees and are opposed to each other with a predetermined distance in a non-contact manner. . For example, as shown in FIG. 6, the protruding portion 37l of the auxiliary capacitance line connecting / inspecting pad 36d and the protruding portion 37m of the scanning line inspecting pad 34c are formed such that the distance d between their tips is about 1 to 3 microns. To be done. Moreover, the tapered portion T is formed toward the tip. The taper portion T can be easily formed when etching is performed in the manufacturing process as described later. Therefore, the facing area of the tip portions of the protrusions 37l and 37m is extremely small, and the capacitive coupling in this portion is a value that can be almost ignored. The interval d is set so that the discharge is started by the electrostatic voltage of several thousand volts, but the discharge is not generated at all by the operating voltage of several tens of volts applied after the liquid crystal display device is completed. Note that after the electrode structure of FIG. 1 is formed, it is covered with an insulating layer 38 except for the connection pad portion as shown in FIG.

After this, the scanning line 32 will be described later.
a, 32b, 32c and auxiliary capacitance lines 33a, 33b, 33
A signal line is formed so as to intersect with c and 33d across the insulating film. Thus, the protrusions 37a to 37
Since the tip of m is sharp like a lightning rod, the electric charge is concentrated on this tip and discharge is more likely to occur than at other portions. That is, since the electrostatic charges of several thousand volts accumulated in the electrodes are discharged at this portion, the scanning lines 32a, which intersect the signal line (not shown) in the screen area formed in a later step with the insulating film in between, 32b, 32c and auxiliary capacitance line 33a,
The electric charges are more concentrated than other portions of 33b, 33c, 33d, and the discharge is more likely to occur. Therefore, in other parts, for example, in the main body part of the scanning lines 32a, 32b, 32c and the auxiliary capacitance lines 33a, 33b, 33c, 33d, for example, in the image display part corresponding to the gate electrode G in the scanning line 32a, Electrostatic charges do not penetrate through the insulating film and suddenly discharge with respect to the signal line formed by intersecting the insulating film with the insulating film.
Therefore, it is possible to very effectively eliminate the occurrence of damage to the insulating film (damage to the insulating film such as pinhole defects and other damages) due to such a rapid movement of charges inside the image display area. it can.

Moreover, in the manufacturing process of the TFT array substrate, since the signal line is formed before the short ring is formed, at the stage where the short ring is not formed, the scanning lines 32a, 32b, 32c and the auxiliary capacitance lines are formed. 33
The a, 33b, 33c, 33d and the signal line are not yet connected by a short ring. Conventionally, at this stage the scan line 32
a, 32b, 32c and auxiliary capacitance lines 33a, 33b,
When the electric charge accumulated between the signal line 33c and the signal line is biased, the charge abruptly moves between the scanning line and the auxiliary capacitance line and the signal line, and the insulating film is damaged. However, according to this embodiment, as described above, the protrusions 37a to 37m are formed.
Since it is possible to discharge the electric charges by, it is possible to extremely effectively eliminate the conventional damage of the insulating film such as pinhole defects and other damages at the stage where the short ring is not formed. .

As described above, the protrusions 37a-37
While m effectively acts on discharge of a high voltage of several thousand volts such as electrostatically accumulated charges, m is generally 20 to 3 at most used for driving a display device of a liquid crystal display device.
No discharge occurs when a drive voltage of about 0 V and several mA is applied. Further, since the protrusions 37a to 37m have almost no capacitive coupling, it is not necessary to cut or remove them from the substrate even after the liquid crystal display device is completed. Therefore, there is no problem in the display performance, the product can be manufactured with a high yield, and the protrusions 37a to 37m can be left on the TFT array substrate even after the product is completed. Therefore, as a product of the TFT array substrate or the display device. Even after completion, it is possible to prevent the occurrence of defects (failures) in the display device due to the accumulation and movement of static electricity.

Hereinafter, the manufacturing process of the TFT array substrate of the active matrix type liquid crystal display device having the electrode structure shown in FIGS. 1 and 2 will be described with reference to the manufacturing process flow of FIG. 3 and predetermined steps of the manufacturing process of FIGS. 4 to 6. It will be described in detail with reference to the plan view of the substrate in FIG.

First, the overall flow of the manufacturing process will be described with reference to FIG. In the first step S1, inspection electrodes for these wirings including a gate electrode, a scanning signal line, an auxiliary capacitance line, and a protrusion are formed on a prepared thin glass substrate of, for example, about 0.7 mm. 1 and 2 show the electrode structure in step S1, and the TFT array substrate as a whole is as shown in FIG.

That is, a Mo-W (molybdenum-tungsten) alloy film having a thickness of 300 nm is formed on the glass insulating substrate 31 by a sputtering method, and then processed into a predetermined shape by photo-etching, and scanning lines 32a to 32m, The gate electrode G, the auxiliary capacitance lines 33a to 33m, and the scanning line inspection electrodes 34a to 34m connected to the respective wirings,
The auxiliary capacitance line inspection electrodes 36a to 36m are formed.

Next, in step S2 of FIG. 3, for the intermediate product shown in FIG. 4, pattern inspection of the scanning lines 32a to 32m and auxiliary capacitance lines 34a to 34m, that is, the wirings 32a to 32m and 34a to 34m, respectively, is performed. After performing open or short inspection, silicon oxide film, SiO _x
Is formed to a thickness of 400 nm, and subsequently, in step S3, a hydrogenated amorphous silicon film, which is a semiconductor layer to be a channel region of the TFT, and an a-Si: H film are formed to a thickness of 50 nm, respectively.
VD (Chemical Vapor Deposition)
film is sequentially formed on the entire substrate 31 by the ion method. Then, in step S4, a silicon nitride (silicon nitride) film and an etching protection film made of SiN _x are similarly formed on the entire surface by C.
After forming a film with a thickness of 200 nm by the VD method, only this etching protection film is processed into a predetermined shape by photo-etching.

Then, in step S5, n is formed by the CVD method.
^{A +} -type a-Si: H film is formed with a thickness of 50 nm. afterwards,
The n ⁺ -type a-Si: H film together with the above-mentioned a-S
After processing the i: H film into a predetermined shape, I is processed in step S6.
A TO (indium tin oxide) film is formed to 100 nm by sputtering.
A thick film is formed, and this is processed by photo-etching to form pixel electrodes P at positions corresponding to the gate electrodes G as shown in FIG.

In step S7, the power supply electrodes 35a1 to 35a are respectively connected to the scanning line connection pads 35a to 35m and the auxiliary capacitance line connection pads 36a to 36m.
m1, 36a1 to 36m1 are formed.

Subsequently, in step S8, as shown in FIG. 6, the scanning lines 32a to 32m and the auxiliary capacitance line 34a are formed.
A plurality of signal lines 39 at a position corresponding to the pixel electrode P with the gate electrode G sandwiched therebetween in a direction intersecting with each other.
a, 39b, 39c, 39d, 39e, ... Are formed.
At this time, at the same time, the short ring 40 is formed along the periphery of the glass substrate 31 so as to surround all the wirings and electrodes. Further, as shown in FIG. 6, a gate electrode G is formed to connect between the gate electrode G and the pixel electrode P, and a source electrode S is formed to connect between the gate electrode G and the signal line 39a. To be done. The short ring 40 is electrically connected to the plurality of signal lines 39a-39b.

Finally, an alignment film (not shown) is formed so as to cover almost the entire surface of the above structure to complete the array substrate 41. Further, an opposite substrate (not shown), which is opposed to the TFT array substrate 41 with a gap for holding liquid crystal, is provided on another glass insulating substrate as a common electrode I.
A TO film is formed to a thickness of 100 nm to form an opposing film,
The opposing substrate and the TFT array substrate 41 are adhered by arranging a sealant / adhesive around both substrates and injecting a liquid crystal layer into the gap between the substrates to complete the main part of the active matrix liquid crystal display device. .

By this method, all the scanning lines 32 are
a to 32 and the auxiliary capacitance lines 33a to 33m are formed close to each other through a protrusion for discharging, and the signal lines 39a to 39a are formed.
The TF of the active matrix type liquid crystal display device manufactured by electrically connecting e with the short ring 40.
Even if the T array substrate 41 is charged with static electricity before forming the short ring, a high potential difference can be prevented from being generated between the wirings, and even if the static electricity is charged after removing the short ring, the T array substrate 41 is discharged through the protrusion for discharging. Therefore, electrostatic breakdown does not occur.

FIG. 7 shows a circuit configuration of a modification of the embodiment shown in FIG. Therefore, in order to make the description easy to understand, the portions corresponding to those of the embodiment of FIG. 6 are denoted by the same or similar reference numerals.

In FIG. 7, in this modification, two short rings 40A and 40B are formed on the substrate 31 at a predetermined distance from each other. The inner short ring 40B corresponds to the short ring 40 in the embodiment of FIG. 6, and the signal line 39a has two transistors Tr1 and Tr.
It is connected to the short ring 40B via the transfer gate TG1 formed by 2. Similarly, the scanning line 32a
Is also connected to the short ring 40B via a transfer gate TG2 formed by two transistors Tr1 and Tr2. Similarly, the auxiliary capacitance line 33a is also connected to the short ring 40B via the transfer gate TG3.

The scanning line 32a is connected to the gate of the switching transistor TFT1, the source of the switching transistor TFT1 is connected to the signal line 39a, and the drain is connected to the pixel electrode P. Below the pixel electrode P, a wide capacitance forming portion 33aa of the auxiliary capacitance line 33a is provided correspondingly. The scanning lines 32a and 32b, the auxiliary capacitance line 33a, and the signal line 39a are all OLB pads (outer).
The lead bonding pad) 41 is connected to the outside of the inner short ring 40B. The other end of the OLB pad 41 is connected to the outer short ring 40A.

Transfer gates TG1, TG2, TG
All of 3 are made conductive when a voltage of, for example, several hundreds of volts is applied to the gate of the transistor, but are designed so as not to be conductive at several tens of volts which is an operating voltage, so that they are high due to static electricity during the manufacturing process. When a voltage is generated, it has a function of releasing the electrostatic charge to the short ring 40B. Therefore, this transfer gate TG1, TG2, TG
No. 3 may be incorporated in the product without removing it after the manufacturing process is completed. However, the outer short ring 40A is cut just outside the OLB pad 41 by cutting the glass substrate 31 at the position shown by the broken line C at the end of the manufacturing process.

In the embodiment of FIG. 6, the projections 37a to 37n are provided with the scanning line connection pads 35a to 3n formed on the peripheral portion of the substrate 31 for connection with the drive circuit.
5m and auxiliary capacitance line connection / inspection pads 36a to 36m
Needless to say, it may be attached between and. Alternatively, the corner portions of the scanning line connection pads 35a to 35m and the auxiliary capacitance connection / inspection pads 36a to 36m are formed to have acute angles equal to or less than a right angle as with the above-mentioned protrusions 37a to 37m, and between them. Is appropriately formed within the range of several μm as described above.

In FIG. 6, the auxiliary capacitance line connecting / inspecting pads 36a to 36m are contact holes 36a1 to 36m formed in the insulating film with respect to the connection wiring 43.
Connected through 1.

The manufacturing process of the display device of the present invention does not need to be changed from the conventional process, and only the protrusions need to be patterned into the delicate structure as described above. Therefore, the manufacturing process is extremely simple. Can be done.

It is desirable that the planar shape of the tip tapered portion T of the above-mentioned projection is formed at an acute angle of 30 degrees or more and 90 degrees or less. Further, it is desirable that the distance between the tips of the adjacent protrusions is 1 μm or more and 20 μm or less.

In the above-mentioned embodiment, one embodiment in which the technique of the present invention is applied to a liquid crystal display device has been shown, but it goes without saying that the application of the present invention is not limited to this. In addition to this, for example, in an EL display or a plasma display, a scanning line and a signal line are arranged so as to intersect with each other with an insulating film interposed therebetween, and due to the movement of charges accumulated electrostatically in them. It is particularly suitable for a display device that has been damaged in the past.

[0050]

As described above in detail, according to the present invention, electrostatic breakdown due to electrostatic charge is prevented even in the process before the formation of the short ring and after the short ring is cut off, and the display failure is prevented. By reducing the generation rate of non-defective products, the manufacturing yield can be improved, and a highly reliable display device such as an active matrix liquid crystal display device can be realized with good productivity and at low cost.

[Brief description of drawings]

FIG. 1 is an enlarged plan view mainly showing discharge protrusions on a TFT array substrate of an active matrix type liquid crystal display device according to the present invention.

FIG. 2 is a diagram showing a cross-sectional structure of a portion of a discharge protrusion shown in FIG.

FIG. 3 is a diagram showing a manufacturing process flow of the liquid crystal display device according to the embodiment of FIG.

FIG. 4 is a diagram showing a schematic plan view of a TFT array substrate in one manufacturing process of the liquid crystal display device of this example.

FIG. 5 is a diagram showing a schematic plan view of a TFT array substrate in another manufacturing process of the liquid crystal display device of this example.

FIG. 6 is a plan view showing an outline of a structure of a TFT array substrate in still another manufacturing process used in the liquid crystal display device according to this example before the short ring is cut off.

7 is a circuit layout diagram showing a layout relationship between a short ring and a circuit component on the TFT array substrate in the manufacturing process shown in FIG.

FIG. 8 is a diagram showing a schematic plan view of a TFT array substrate in a manufacturing process of a liquid crystal display device using a conventional short ring.

FIG. 9 is a diagram showing a state where the position of the TFT array substrate is corrected by a metal arm on the transfer system in the manufacturing process of the liquid crystal display device.

FIG. 10 is a conceptual diagram showing a state in which electric charges electrostatically charged on the TFT array substrate move steeply toward the contact due to contact with a metal arm.

FIG. 11 is a diagram showing pinhole defects caused by damage to an insulating film due to discharge of electrostatic charges in a manufacturing process of a conventional display device.

12 is a diagram showing a state where a scan line and a signal line have a short circuit defect through the pinhole defect shown in FIG. 11;

[Explanation of symbols]

 31 ... Glass substrate, 32c ... Scan line, 33d ... Auxiliary capacitance line, 34c ... Scan line inspection pad, 36d ... Auxiliary capacitance line inspection pad, 37l ... Discharge protrusion, 37m ... Discharge protrusion, T ... Taper Part, d ... Discharge gap. 38 ... Insulating layer.

Claims (12)

[Claims] 1. A plurality of first electrode wirings arranged substantially parallel to each other on a first insulating substrate, and a plurality of first electrode wirings electrically connected to the first electrode wirings through switch elements and arranged in a matrix. A first electrode substrate including a pixel electrode of; a second electrode substrate disposed on a second insulating substrate and including a counter electrode facing the pixel electrode; held between the pixel electrode and the counter electrode A light modulating layer; at least one of the adjacent first electrode wirings has at least one discharge protrusion toward the other. 2. The display device according to claim 1, further comprising a second electrode wiring provided in a direction substantially orthogonal to the first electrode wiring group via an insulating film. 3. The first electrode wiring group includes a scanning line group,
The display device according to claim 2, wherein the second electrode wiring group includes a signal line group. 4. The first electrode wiring group includes a scanning line group and an auxiliary capacitance line group, and one of the first electrode wiring groups that are alternately adjacent is a scanning line and the other is an auxiliary capacitance line. Item 5. The display device according to item 3. 5. The first electrode wiring group includes a signal line group,
The display device according to claim 2, wherein the second electrode wiring group includes a scanning line group. 6. A plurality of scanning lines and a plurality of auxiliary capacitance lines formed on the first insulating substrate and a layer different from the layer in which the scanning lines and the auxiliary capacitance lines are formed with an insulating film interposed. Signal lines that are arranged so as to intersect with the scanning lines and the auxiliary capacitance lines, and are arranged in each lattice formed by intersecting the plurality of scanning lines and the plurality of signal lines with each other. A pixel electrode array substrate having a pixel electrode provided thereon; and a counter electrode facing the pixel electrode array substrate is a second
A counter substrate formed on an insulative substrate; and a light modulation layer held between the pixel electrode array substrate and the counter substrate, wherein a planar pattern is formed at an acute angle of a right angle or less. The protrusions that are opposed to each other and are capable of discharging the charges charged on the scanning lines and the charges charged on the auxiliary capacitance lines in a non-contact manner between the adjacent scanning lines and the auxiliary capacitance lines are the scanning lines. And a display device formed on the scanning line and the auxiliary capacitance line, avoiding a portion where both lines of the signal line intersect. 7. The scanning line connection pad and the auxiliary capacitance line connection, wherein the protrusion extends from the scanning line and the auxiliary capacitance line and is formed at a position outside the region where the pixel electrodes are arranged. 7. The display device according to claim 6, which is attached to the pad or the scanning line inspection pad and the auxiliary capacitance line inspection pad connected to the pad. 8. The projecting portion is one corner of the scanning line connection pad and one corner of the auxiliary capacitance line connection pad, and the corners are electrically charged to the scanning line and electrically charged to the auxiliary capacitance line. 8. The display device according to claim 7, wherein the electric charges are arranged so as to be capable of discharging in a non-contact manner between the scanning line and the auxiliary capacitance line which are adjacent to each other. 9. The planar shape of the tips of the protrusions is formed at an acute angle of 30 degrees or more and 90 degrees or less, and the tips of adjacent protrusions are separated by a distance of 1 μm or more and 20 μm or less. The display device according to claim 7, wherein the display device is arranged. 10. The light modulation layer includes a liquid crystal layer.
The display device according to claim 1. 11. A plurality of scanning lines and a plurality of auxiliary capacitance lines are formed on a first insulating substrate, and the scanning lines and the auxiliary capacitance lines are formed on a layer different from the layer on which an insulating film is interposed. A signal line is formed so as to intersect with the scanning line and the auxiliary capacitance line, and a pixel electrode is provided in each lattice in which the plurality of scanning lines and the plurality of signal lines intersect with each other. An array substrate is formed, and a counter substrate having a counter electrode on a second insulating substrate is arranged so as to face the pixel electrode array substrate, and light modulation is performed between the pixel electrode array substrate and the counter substrate. In a method for manufacturing a display device, which comprises sandwiching a layer, a planar pattern is formed at an acute angle equal to or less than a right angle, and the charges charged in the scanning lines and the charges charged in the auxiliary capacitance lines are adjacent to the scanning lines. Not connected to the auxiliary capacitance line Method for producing a touch is dischargeable to the opposing projections, the display includes the step of both lines of the scanning lines and the signal lines are formed respectively on the scanning line to avoid the intersection with the auxiliary capacitance line device. 12. The scanning line connection pad and the auxiliary capacitance line connection, which are formed outside the region where the pixel electrodes are arranged by extending the protrusions from the scanning line and the auxiliary capacitance line, respectively. The method of manufacturing a display device according to claim 11, which is attached to the pad or the scanning line inspection pad and the auxiliary capacitance line inspection pad connected to the pad.