JPH08139034A - Thin film vapor growth equipment - Google Patents

Abstract

PURPOSE: To enable a uniform mixing of two systems of material gasses in the close vicinity of a substrate on which a film is formed. CONSTITUTION: A substrate 2 on which a film is to be formed is mounted on a susceptor 3, and arranged in a lateral reaction vessel 1. Two kinds of material gasses A, B are supplied to the substrate from a nozzle body 7 of two-vertical- stages structure. The nozzle body 7 has a first nozzle 12 and a second nozzle 13 provided with a gas jet port 14 and a gas jet port 15, respectively. Out of them, the gas jet port 15 on the near side to the substrate is constituted as a form along the periphery of the substrate. To a circular substrate, the upper and the lower end edges of the gas jet port are constituted in circular arcs which are almost concentric to the periphery of the substrate. The material gasses from each of the positions of the gas jet port reach the substrate through the shortest distance. Two kinds of material gasses are uniformly mixed in the vicinity of the substrate. The loss of gas which is to be caused by reaction in a low temperature region until the gasses reach the substrate can be prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a horizontal thin film vapor phase growth apparatus in which the flow of a source gas supplied to a film formation substrate is improved.

[0002]

2. Description of the Related Art FIG. 3 is a block diagram showing an example of a horizontal thin film vapor phase growth apparatus, for example, a metal organic thin film vapor phase growth apparatus (MOCVD apparatus), which mixes two kinds of raw material gases and supplies them to a film formation substrate. 3A is a cross-sectional view of the entire apparatus, and FIG.
(B) is a top view of the nozzle portion and the film formation substrate portion, and the reaction container portion is shown in cross section. An opening 1a for arranging a film formation substrate is provided in the lower part of the horizontal reaction vessel 1, and the film formation substrate 2 is placed on the susceptor 3 at the position shown in the drawing and supports the susceptor 3 during the film formation operation. The substrate to be film-formed is rotated by the rotation of the shaft 4. A high frequency induction heating coil 5 for heating the film formation substrate 2 via the susceptor 3 is provided around the arrangement opening 1a of the reaction container.

A feed gas and purge gas inlet is provided in front of the reaction vessel 1, and a nozzle flange 6 which is a cylindrical vessel as a whole is attached to the front flange 1b of the reaction vessel. In this nozzle flange 6,
The nozzle body 7 having a two-stage structure is mounted, and the purge gas C is supplied from the introduction pipe 9 to the annular gas passage 8 of the nozzle flange. The same gas is supplied from the plurality of purge gas inlets 10 to the periphery of the nozzle body 7 in the reaction vessel. It is introduced into the space 11.

As shown in the perspective view of FIG. 4, the nozzle body 7 is composed of a first nozzle 12 and a second nozzle 13 having a two-stage structure.
4, the outlet port 15 of the second source gas B in the second nozzle is located closer to the film-forming substrate 2, the flow passage to each nozzle is narrowed near the nozzle flange 6, and the circular mounting base 16 is provided. Leading to. At the end face of the mounting base, raw material gas blowing ports 17 and 18 communicating with the first and second nozzles 12 and 13 are formed, and two gas flow paths for these blowing ports are O-rings 19 and a purge gas. The flow path and the second raw material gas flow path are separated by an O-ring 20, and the first and second raw material gases A and B are supplied to the two raw material gas flow paths from the gas introduction ports 21 and 22. .

The blowout port 15 of the second nozzle 13 is located closer to the film formation substrate 2 than the source gas blowout port 14 of the first nozzle 12, and the source gases from both nozzles are mixed near the film formation substrate. And it is given to the same substrate.

The first and second slurries 12 and 13 are inserted into the front part of the reaction vessel 1 and deep into the upstream side, but since the purge gas C flows from the upstream side into the peripheral space 11 of the reaction vessel, The gas flows backward and stays in the front part of the reaction container, prevents the reaction products from adhering to the wall surface of the reaction container, and switches the source gas when growing the multilayer film on the film formation substrate 2. However, the dead space of the raw material gas is not formed.

[0007]

Problems to be Solved by the Invention II-V in MOCVD equipment
In the case of epitaxially growing a group I or nitrogen-based III-V group compound semiconductor, depending on the source gas species, some of them react at room temperature when mixed. In that case, it is better to mix them as close as possible to the film formation substrate 2, but for the circular substrate, the upper and lower edges of the outlet 15 of the second nozzle 13 in the nozzle body 7 are straight lines. Since it is a rectangular opening, the distance from the film-forming substrate is different at both ends of the blowout port compared to the central part of the blowout port, and the source gas is mixed immediately before the substrate toward the both ends of the blowout port. It will not be possible.

An object of the present invention is to provide a thin film vapor deposition apparatus capable of mixing two source gases and providing them to a film formation substrate at any position of a nozzle outlet, in the immediate vicinity of the film formation substrate. It is what

[0009]

DISCLOSURE OF THE INVENTION The present invention is a thin film gas phase having a horizontal reaction vessel and a nozzle having a two-tier structure for supplying two source gases to a film formation substrate arranged in the reaction vessel. The growth apparatus is characterized in that the gas blowout port on the side of the nozzle near the film formation substrate is formed along the peripheral edge of the film formation substrate.

[0010]

In the nozzle having the upper and lower two-stage structure, the gas blowout port on the side closer to the film formation substrate is formed along the peripheral edge of the film formation substrate. The source gas can be supplied in the immediate vicinity, and the two source gases can be mixed in the immediate vicinity of the film formation substrate and uniformly supplied to the substrate.

[0011]

Embodiments of the present invention will be described with reference to the drawings. 1A and 1B are configuration diagrams of an embodiment, FIG. 1A is a cross-sectional view, FIG. 1B is a top view of a nozzle portion and a film formation substrate portion, and a reaction vessel portion is shown in a partial cross-section. 2 is a perspective view of the nozzle tip portion, and the same reference numerals as those in FIGS. 3 to 4 denote the same portions. The film formation substrate 2 is placed on the susceptor 3 in an arrangement opening 1a of the film formation substrate formed in the lower portion of the horizontal reaction vessel 1, and the susceptor 3 is provided with a shaft 4
Supported by. Around the arrangement portion 1a of the reaction container,
A high frequency induction heating coil 5 for heating the film formation substrate 2 via the susceptor 3 is provided.

A nozzle flange 6 is attached to the front flange 1b of the reaction vessel.
A nozzle body 7 having a two-stage structure for introducing the first raw material gas A and the second raw material gas B is installed therein. The nozzle body 7 is composed of a first nozzle 12 and a second nozzle 13 having a two-stage structure.
The outlet port 15 of the second source gas B in the second nozzle is located closer to the target substrate 2 than the outlet port 14 of the first source gas A in the nozzle. First and second
First and second raw material gases A and B are supplied to the nozzles 12 and 13 from the gas introduction ports 21 and 22. The purge gas C is supplied from the introduction pipe 9 to the annular gas passage 8 of the nozzle flange and introduced into the peripheral space 11 of the nozzle body 7 in the reaction vessel.

Of the two source gas outlets 14 and 15, the outlet port 15 for the second source gas B located near the film formation substrate 2 is formed in a shape along the periphery of the film formation substrate. For a circular film formation substrate, the upper and lower edges of the blowout port are formed in an arc shape that is substantially concentric with the peripheral edge of the substrate. As a result, the second source gas B discharged from each position of the outlet 15 can reach the film formation substrate in the shortest distance, and the two source gases B from the outlets 14 and 15 are near the film formation substrate. It is uniformly mixed and applied to the same substrate. Therefore, in order to further improve the uniformity of the film quality, it is preferable to supply the raw material gas that controls the film formation as the raw material gas B from the blowout port 15. For example, when forming a gallium arsenide film, the raw material gas is formed. Arsine may be introduced as the gas A, and trimethylgallium may be introduced as the source gas B. The nozzle body 7 is made of high-purity quartz.

[0014]

EFFECT OF THE INVENTION Since the present invention is configured as described above, of the gas blowing ports of the two nozzles for introducing the two systems of source gases A and B into the film formation substrate, the film formation substrate Since the outlets located in the vicinity are formed along the peripheral edge of the film formation substrate, the gas flow is improved, and the source gas from any position of the outlets can reach the film formation substrate in the shortest distance. After reaching, the two source gases can be uniformly mixed near the film formation target substrate and given to the same substrate. Then, it is possible to prevent the loss of the film forming material gas due to the reaction in the low temperature range until reaching the film formation target substrate due to the mixing and application of the material gas.

[Brief description of drawings]

1A and 1B are configuration diagrams of an embodiment of the present invention, in which FIG. 1A is an overall sectional view, and FIG. 1B is a top view of a nozzle portion and a film formation substrate portion.

FIG. 2 is a perspective view of a main portion of the embodiment and a tip portion of a nozzle body.

3A and 3B are configuration diagrams of a conventional example, FIG. 3A is an overall cross-sectional view, and FIG. 3B is a top view of a nozzle portion and a film formation substrate portion.

FIG. 4 is a perspective view of a conventional nozzle body.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Reaction container 2 Deposition substrate 3 Susceptor 6 Nozzle flange 7 Two-stage structure nozzle body 12 1st nozzle 13 2nd nozzle 14, 15 Gas blowout port A 1st source gas B 2nd source gas C Purge gas

Claims (1)

[Claims] 1. A horizontal reaction vessel and an upper and a lower chamber 2 for supplying two source gases to a film formation substrate arranged in the reaction vessel.
In a thin film vapor deposition apparatus having a stepped nozzle, a thin film vapor phase characterized in that a gas outlet of the nozzle on a side closer to a film formation substrate is formed along a peripheral edge of the film formation substrate. Growth equipment.