JPH08111516A - Solid state image sensor with built-in light source - Google Patents
Solid state image sensor with built-in light sourceInfo
- Publication number
- JPH08111516A JPH08111516A JP6245162A JP24516294A JPH08111516A JP H08111516 A JPH08111516 A JP H08111516A JP 6245162 A JP6245162 A JP 6245162A JP 24516294 A JP24516294 A JP 24516294A JP H08111516 A JPH08111516 A JP H08111516A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- solid
- image sensor
- state image
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 239000000853 adhesive Substances 0.000 claims abstract description 8
- 230000001070 adhesive effect Effects 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims description 15
- 239000010408 film Substances 0.000 description 28
- 239000010410 layer Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 17
- 238000005401 electroluminescence Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 239000011521 glass Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 Phospho Chemical class 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14678—Contact-type imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ファクシミリ等に用い
られるイメージセンサの光源一体型固体撮像装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device integrated with a light source of an image sensor used in a facsimile or the like.
【０００２】[0002]
【従来の技術】近年、ファクシミリはその普及に合わせ
て、より小型化、軽量化、低価格化が求められている。
ファクシミリ等に用いられているイメージセンサは大別
して非密着型、密着型、完全密着型の３種類がある。2. Description of the Related Art In recent years, facsimiles have been required to be smaller, lighter, and cheaper in accordance with the spread thereof.
Image sensors used in facsimiles and the like are roughly classified into three types: non-contact type, contact type, and perfect contact type.
【０００３】電荷結合素子（ＣＣＤ）を用いた非密着型
は、すでに確立されている、シリコンウェハを用いたＬ
ＳＩ製造プロセスで生産できることやＣＣＤチップが小
型で済むこともあって価格面で有利であるが、原稿を縮
小レンズ系を通してＣＣＤに投影しているため、小型
化、軽量化に関しては他の２方式に比べ劣る。The non-contact type using a charge coupled device (CCD) has already been established, and L using a silicon wafer is used.
It is advantageous in terms of price because it can be produced by the SI manufacturing process and the CCD chip can be small, but since the original is projected on the CCD through the reduction lens system, there are two other methods for downsizing and weight reduction. Inferior to.
【０００４】また、密着型イメージセンサは縮小光学系
がいらないため小型化が比較的容易であるというメリッ
トがあり徐々に市場に受け入れられつつあるが、やや高
価であるということがその普及を阻んでいるという状態
である。また、セルフォックレンズアレイを用いて原稿
を固体撮像素子上に投影していることと光源として発光
ダイオード（ＬＥＤ）アレイがあるために、ある程度の
幅と厚さが必要（〜１５ｍｍ）である。Further, the contact type image sensor has a merit that it is relatively easy to miniaturize since it does not need a reduction optical system and is gradually gaining acceptance in the market, but its rather high price hinders its popularization. It is in the state of being. Further, since the original is projected on the solid-state image pickup device using the SELFOC lens array and a light emitting diode (LED) array is used as a light source, a certain width and thickness are required (up to 15 mm).
【０００５】一方、完全密着型イメージセンサは密着型
イメージセンサと比してもさらに小型化が可能であり、
セルフォックレンズアレイと撮像素子の光学的な位置調
整が不必要であるため組立工程の簡素化が容易であると
いう特徴を持つ。しかしながら、密着型イメージセンサ
と同様にＬＥＤ分の厚みはやはり必要である。また、完
全密着型イメージセンサは固体撮像素子が配置されてい
る基板の裏側から原稿に光を投射する必要があるため透
明基板上に固体撮像素子を形成する必要があり、シリコ
ンウェハ上に形成されるＣＣＤやアルミナ基板などの光
を透過しない基板に形成された固体撮像素子を完全密着
型イメージセンサ構造にする事は困難であった。On the other hand, the perfect contact image sensor can be further downsized as compared with the contact image sensor.
Since it is unnecessary to adjust the optical positions of the SELFOC lens array and the image sensor, the assembly process can be simplified easily. However, as in the contact image sensor, the thickness of the LED is still necessary. In addition, since the perfect contact image sensor needs to project light onto the original from the back side of the substrate on which the solid-state image sensor is arranged, it is necessary to form the solid-state image sensor on the transparent substrate, which is formed on the silicon wafer. It has been difficult to form a solid-state image sensor structure for a solid-state image sensor formed on a substrate that does not transmit light, such as a CCD or an alumina substrate.
【０００６】以下、従来例を図面に基づいて説明する。
図７は、従来例の説明図であり、図７（ａ）は、従来の
密着型イメージセンサの説明である。図７（ａ）におい
て、筐体４１内には、ＬＥＤハウス４２とセルフォック
レンズアレイ２９と固体撮像素子が載っている基板１が
設けてある。この密着型イメージセンサは、ＬＥＤハウ
ス４２から発射された光が筐体４１上の原稿（図示せ
ず）により反射し、この反射光がセルフォックレンズア
レイ２９を通り基板１上の固体撮像素子に入力されるも
のである。A conventional example will be described below with reference to the drawings.
FIG. 7 is an explanatory view of a conventional example, and FIG. 7A is an explanation of a conventional contact image sensor. In FIG. 7A, the substrate 1 in which the LED house 42, the SELFOC lens array 29, and the solid-state image sensor are mounted is provided in the housing 41. In this contact-type image sensor, the light emitted from the LED house 42 is reflected by a document (not shown) on the housing 41, and the reflected light passes through the SELFOC lens array 29 to the solid-state image sensor on the substrate 1. It is input.
【０００７】この密着型イメージセンサは、図７（ａ）
下部の矢印で示すように、ある程度の幅と厚さが必要と
なる。図７（ｂ）は、従来の完全密着型イメージセンサ
の説明であり、筐体４１の上面には、固体撮像素子１０
が載っている基板１が設けてあり、この基板１には光を
透過するためのスリット４０が設けてある。また、筐体
４１の下面には、ＬＥＤハウス４２が設けてある。この
完全密着型イメージセンサは、ＬＥＤハウスから発射さ
れた光が基板１に設けた光を透過させるためのスリット
４０を通り原稿（図示せず）より反射し、この反射光が
固体撮像素子１０に入力されるものである。This contact type image sensor is shown in FIG.
Some width and thickness is required, as indicated by the arrow at the bottom. FIG. 7B is a description of a conventional perfect contact image sensor, in which the solid-state image sensor 10 is provided on the upper surface of the housing 41.
Is provided with a substrate 1 on which a slit 40 for transmitting light is provided. An LED house 42 is provided on the lower surface of the housing 41. In this perfect contact type image sensor, the light emitted from the LED house passes through a slit 40 for transmitting the light provided on the substrate 1 and is reflected by a document (not shown), and the reflected light is reflected by the solid-state image sensor 10. It is input.
【０００８】この完全密着型イメージセンサは、図７
（ｂ）下部の上下の矢印のように、ＬＥＤハウス分の厚
さが必要となる。This perfect contact type image sensor is shown in FIG.
(B) The thickness of the LED house is required as indicated by the upper and lower arrows at the bottom.
【０００９】[0009]
【発明が解決しようとする課題】上記従来のものにおい
ては、次のような課題があった。非密着型のイメージセ
ンサは、原稿を縮小レンズ系を通してＣＣＤに投影して
いるため、小型化、軽量化ができなかった。また、密着
型イメージセンサは、光源としてＬＥＤハウスがあるた
め、ある程度以上小型化することができなかった。さら
に、完全密着型イメージセンサは、ＬＥＤハウス分の厚
さが必要であり、また、固体撮像素子は、透明基板上に
形成する必要があった。The above-mentioned conventional ones have the following problems. Since the non-contact type image sensor projects the original document onto the CCD through the reduction lens system, the size and weight cannot be reduced. Further, since the contact type image sensor has an LED house as a light source, it cannot be downsized to a certain extent. Further, the perfect contact type image sensor needs to have a thickness corresponding to the LED house, and the solid-state image sensor needs to be formed on a transparent substrate.
【００１０】以上、イメージセンサの大きさを制限して
いるものはレンズや光源などの光学系であることが分か
った。即ち、さらにイメージセンサの小型化を達成する
ためには、光学系を小型化する事が必要であることが分
かる。また、これらの光学系は製造コストという点から
見ても固体撮像素子本体と同等かそれ以上の割合を占め
ており、光学系のコストダウンが低価格化に非常に重要
であるといえる。加えて、イメージセンサの固体撮像素
子部を基板の種類を問わずに製造できるようになればさ
らにコストダウンを図ることが可能になる。As described above, it has been found that what limits the size of the image sensor is an optical system such as a lens or a light source. In other words, it is necessary to reduce the size of the optical system in order to further reduce the size of the image sensor. Further, these optical systems occupy a ratio equal to or higher than that of the solid-state image pickup device main body from the viewpoint of manufacturing cost, and it can be said that cost reduction of the optical system is very important for lowering the cost. In addition, if the solid-state image pickup device portion of the image sensor can be manufactured regardless of the type of substrate, the cost can be further reduced.
【００１１】本発明は、固体撮像素子部を透明、非透明
の基板の種類を問わず製造でき、超小型でかつ安価なイ
メージセンサを実現することを目的とする。It is an object of the present invention to realize an image sensor which is ultra-compact and inexpensive, in which the solid-state image pickup device section can be manufactured regardless of the type of transparent or non-transparent substrate.
【００１２】[0012]
【課題を解決するための手段】上記目的を達成するた
め、本発明では次のように構成した。図１は、本発明の
１実施例構成図である。図１において、基板１上に固体
撮像素子１０と固体撮像素子１０の読み取り駆動回路２
０を形成し、さらに透明基板２１上に薄膜発光素子３０
を形成する。次に、これらの基板１と透明基板２１と
を、それぞれ素子が配置された面が合わされるように透
明体である接着剤２７等で一体化（接着又はモールド）
する。In order to achieve the above object, the present invention is configured as follows. FIG. 1 is a configuration diagram of an embodiment of the present invention. In FIG. 1, a solid-state image sensor 10 and a read drive circuit 2 for the solid-state image sensor 10 are provided on a substrate 1.
0, and further the thin film light emitting device 30 is formed on the transparent substrate 21.
To form. Next, the substrate 1 and the transparent substrate 21 are integrated (bonded or molded) with an adhesive 27 or the like which is a transparent body so that the surfaces on which the elements are arranged are aligned.
To do.
【００１３】[0013]
【作用】上記構成に基づく本発明の作用を説明する。薄
膜発光素子３０のエレクトロルミネセンス（以下、ＥＬ
という）膜２４から発射された光は、原稿２８で反射さ
れ、固体撮像素子１０で光電変換され、この光電変換さ
れた出力が読み取り駆動回路２０に入力される。この駆
動回路２０から原稿の濃淡画像に応じた信号が得られる
ものである。The operation of the present invention based on the above configuration will be described. Electroluminescence of the thin film light emitting device 30 (hereinafter, EL
The light emitted from the film 24 is reflected by the original 28, photoelectrically converted by the solid-state image sensor 10, and the photoelectrically converted output is input to the reading drive circuit 20. A signal according to the grayscale image of the original is obtained from this drive circuit 20.
【００１４】この構成において、薄膜発光素子３０は、
例えば薄膜面状体の有機ＥＬ素子で構成されるので、透
明基板２１上にフラットに設置することができ、薄膜発
光素子面を固体撮像素子面と貼り合わせることにより超
小型の固体撮像装置（イメージセンサ）を安価に得るこ
とができる。In this structure, the thin film light emitting device 30 is
For example, since it is composed of a thin film planar organic EL device, it can be installed flat on the transparent substrate 21, and by bonding the thin film light emitting device surface to the solid state imaging device surface, a microminiature solid state imaging device (image Sensor) can be obtained at low cost.
【００１５】[0015]
〔本発明の第１実施例の説明〕本発明の第１実施例を図
１〜図５に基づき説明する。図１は本発明の１実施例構
成図、図２はフォトトランジスタの説明図、図３、図４
は固体撮像素子の形成工程説明図、図５は薄膜ＥＬ素子
の形成工程説明図である。[Description of First Embodiment of the Present Invention] A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a configuration diagram of an embodiment of the present invention, FIG. 2 is an explanatory diagram of a phototransistor, and FIGS.
FIG. 5 is an explanatory diagram of a solid-state image sensor forming process, and FIG. 5 is an explanatory diagram of a thin-film EL element forming process.
【００１６】図１は完全密着型の固体撮像装置であり、
以下、図１の説明をする。基板１上に固体撮像素子１０
と固体撮像素子１０の読み取り駆動回路２０を形成し、
更に薄板ガラスである透明基板２１上に薄膜発光素子３
０を形成する。次にこの基板１と透明基板２１とを、そ
れぞれ素子が配置された面が合わされるように例えば、
エポキシ系接着剤、紫外線硬化型の接着剤等の透明の接
着剤２７で接着するものである。この場合、読み取る原
稿２８は透明基板２１に接触するものである。FIG. 1 shows a solid contact type solid-state image pickup device,
Hereinafter, FIG. 1 will be described. Solid-state image sensor 10 on substrate 1
And a read drive circuit 20 of the solid-state image sensor 10 is formed,
Further, the thin film light emitting device 3 is formed on the transparent substrate 21 which is thin glass.
Form 0. Next, the substrate 1 and the transparent substrate 21, for example, so that the surfaces on which the elements are arranged are aligned, for example,
A transparent adhesive 27 such as an epoxy adhesive or an ultraviolet curable adhesive is used for adhesion. In this case, the original 28 to be read comes into contact with the transparent substrate 21.
【００１７】図２は、固体撮像素子１０に用いるフォト
トランジスタの説明図である。図２において、１は基板
であり、例えばガラス基板、石英基板、セラミックス
（Ａｌ 2 Ｏ3 ）、シリコン基板（多結晶又は単結晶）等
である。２は絶縁膜であり、基板１がシリコン基板の場
合は、熱酸化工程を使用して形成できる。３は活性層、
４はゲート絶縁膜、５はゲート電極、６は層間絶縁膜、
７は金属配線電極、８はいわゆるソース・ドレイン領域
である不純物導入部である。FIG. 2 shows a photo used in the solid-state image sensor 10.
It is explanatory drawing of a transistor. In FIG. 2, 1 is a substrate
And, for example, glass substrate, quartz substrate, ceramics
(Al 2O3), Silicon substrate (polycrystal or single crystal), etc.
Is. 2 is an insulating film, and when the substrate 1 is a silicon substrate
If so, it can be formed using a thermal oxidation process. 3 is an active layer,
4 is a gate insulating film, 5 is a gate electrode, 6 is an interlayer insulating film,
7 is a metal wiring electrode, 8 is a so-called source / drain region
Is the impurity introduction part.
【００１８】このフォトトランジスタは、薄膜トランジ
スタ（ＴＦＴ）を製造するプロセスとほぼ同時に構成す
ることのできる薄膜フォトトランジスタを用いるもので
ある。この薄膜フォトトランジスタが固体撮像装置の光
電変換素子（固体撮像素子）となるものである。図２で
は、入力光は上面より入力され活性層３で光電変換する
ものである。This phototransistor uses a thin film phototransistor which can be formed almost at the same time as the process of manufacturing a thin film transistor (TFT). This thin film phototransistor serves as a photoelectric conversion element (solid-state image pickup element) of the solid-state image pickup device. In FIG. 2, the input light is input from the upper surface and photoelectrically converted in the active layer 3.
【００１９】図３は、固体撮像素子の形成工程説明図
（１）、図４は、固体撮像素子の形成工程説明図（２）
である。以下、図３、図４に基づいて説明する。基板１
として例えば安価なグレードの低い単結晶シリコン基板
又は多結晶シリコン基板を用い、熱酸化により３００ｎ
ｍの熱酸化シリコン膜を形成する。こうして形成した酸
化シリコン膜は使用したシリコン基板１のグレードによ
っては不純物を含む場合があるため、更に２００ｎｍの
清浄な酸化シリコン膜を減圧気相成長（ＬＰＣＶＤ）法
で成膜して絶縁膜２を形成する（図３（ａ）参照）。FIG. 3 is an explanatory view (1) of a solid-state image sensor forming process, and FIG. 4 is an explanatory view (2) of a solid-state image sensor forming process.
Is. Hereinafter, description will be given based on FIGS. 3 and 4. Board 1
For example, an inexpensive low-grade single crystal silicon substrate or a polycrystalline silicon substrate is used, and 300 n is obtained by thermal oxidation.
m thermal oxide silicon film is formed. The silicon oxide film thus formed may contain impurities depending on the grade of the silicon substrate 1 used. Therefore, a clean silicon oxide film of 200 nm is further formed by the low pressure vapor deposition (LPCVD) method to form the insulating film 2. Formed (see FIG. 3A).
【００２０】この後に活性層３として２００ｎｍの膜厚
の非晶質（アモルファス）シリコンをプラズマＣＶＤ法
により成膜する。このときの成膜条件は反応ガスとして
シランを用い、反応温度２００℃、ガス圧５．３Ｐａ、
ＲＦ（高周波）電力３５Ｗで被着速度６ｎｍ／ｍｉｎで
行い、更に６００℃で２０時間加熱することで非晶質シ
リコンは固相成長し、結晶性を有するようになる（図３
（ｂ）参照）。なお、このプラズマＣＶＤ法のかわりに
ＬＰＣＶＤ法を用いることもできる。Thereafter, as the active layer 3, a 200 nm-thick amorphous silicon film is formed by the plasma CVD method. The film forming conditions at this time were silane used as a reaction gas, a reaction temperature of 200 ° C., a gas pressure of 5.3 Pa,
By performing RF (high frequency) power of 35 W at a deposition rate of 6 nm / min, and further heating at 600 ° C. for 20 hours, amorphous silicon grows in a solid phase and becomes crystalline (FIG. 3).
(B)). An LPCVD method may be used instead of the plasma CVD method.
【００２１】こうして得られた多結晶シリコン活性層３
を島状にパターニングする（図３（ｃ）参照）。引き続
きゲート酸化シリコン膜４が例えば１００ｎｍになるよ
うに多結晶シリコン活性層３の熱酸化を行う（図３
（ｄ）参照）。Polycrystalline silicon active layer 3 thus obtained
Is patterned into an island shape (see FIG. 3C). Subsequently, the polycrystalline silicon active layer 3 is thermally oxidized so that the gate silicon oxide film 4 becomes, for example, 100 nm (FIG. 3).
(D)).
【００２２】この酸化シリコン膜４の形成後速やかにＬ
ＰＣＶＤ法により、ゲート電極５としてリン（Ｐ）を１
×１０20ａｔｏｍｓ／ｃｍ3 程度以上ドーピングしたｎ
+ ポリシリコン（ｐｏｌｙ−Ｓｉ）を約２００ｎｍ成膜
する（図３（ｅ）参照）。Immediately after the formation of the silicon oxide film 4, L
Phosphorus (P) is used as the gate electrode 5 by the PCVD method.
N doped with about 10 20 atoms / cm 3 or more
+ Polysilicon (poly-Si) is deposited to a thickness of about 200 nm (see FIG. 3E).
【００２３】次に、ドライエッチング法によりゲート電
極５をパターニングし、引き続き、コンタクト層を形成
する活性層３上の酸化シリコン膜４を一部ないし全部取
り除く（図３（ｆ）参照）。Next, the gate electrode 5 is patterned by the dry etching method, and then the silicon oxide film 4 on the active layer 3 forming the contact layer is partially or completely removed (see FIG. 3 (f)).
【００２４】イオン注入あるいはイオンドーピング法に
よる不純物の導入を行い不純物導入部８を形成する。Ｎ
型に対してはリン（Ｐ）を６０ＫＶの加速電圧で１×１
０15ａｔｏｍｓ／ｃｍ2 打ち込む（図４（ａ）参照）。
またＰ型に対しては不純物の導入を行いたくない部分を
フォトレジスト９で被覆して更にボロン（Ｂ）を４０Ｋ
Ｖの加速電圧で５×１０15ａｔｏｍｓ／ｃｍ2 のドーズ
量を打ち込んだ後（図４（ｂ）参照）、これら導入した
不純物を活性化するため窒素雰囲気中において６００℃
のアニール温度で１２時間の熱処理を行う。Impurities are introduced by ion implantation or ion doping to form an impurity introduction part 8. N
Phosphorus (P) is applied to the mold at an acceleration voltage of 60 KV 1 × 1
Implanting 0 15 atoms / cm 2 (see FIG. 4A).
Further, for the P type, a portion where the introduction of impurities is not desired is covered with a photoresist 9 and boron (B) is added to 40K.
After implanting a dose of 5 × 10 15 atoms / cm 2 with an accelerating voltage of V (see FIG. 4B), 600 ° C. in a nitrogen atmosphere to activate the introduced impurities.
Heat treatment is performed for 12 hours at the annealing temperature.
【００２５】次に、常圧ＣＶＤ法により層間絶縁膜６と
して酸化シリコン膜あるいはＰＳＧ（Ｐｈｏｓｐｈｏ
Ｓｉｌｉｃａｔｅ Ｇｌａｓｓ）膜を約８００ｎｍ成膜
した後（図４（ｃ）参照）、コンタクトホールを開孔し
（図４（ｄ）参照）、アルミニウム（Ａｌ）７をスパッ
タ法で成膜する（図４（ｅ）参照）。その後、パターニ
ングしてＡｌ配線を施す（図４（ｆ）参照）。最後に電
気特性を改善するために３５０℃の水素雰囲気中で１時
間のアニール処理を行う。これにより、所望の固体撮像
装置、即ち、固体撮像素子１０と読み取り駆動回路２０
を同時に得ることができる。Next, a silicon oxide film or PSG (Phospho) is used as the interlayer insulating film 6 by the atmospheric pressure CVD method.
After forming a Silicate Glass film with a thickness of about 800 nm (see FIG. 4C), a contact hole is opened (see FIG. 4D), and aluminum (Al) 7 is formed with a sputtering method (see FIG. 4). (See (e)). After that, patterning is performed to provide Al wiring (see FIG. 4F). Finally, in order to improve electric characteristics, annealing treatment is performed in a hydrogen atmosphere at 350 ° C. for 1 hour. As a result, a desired solid-state imaging device, that is, the solid-state imaging device 10 and the reading drive circuit 20 are obtained.
Can be obtained at the same time.
【００２６】図５は、薄膜ＥＬ素子の形成工程説明図で
ある。図５において、透明基板２１として厚さが５０〜
２００μｍの薄板ガラス基板を用いる。この透明基板の
厚さは、２００μｍ以上になると隣の反射光が固体撮像
素子１０に混じり込むことになり、分解能が悪くなり、
５０μｍより薄いと基板としての強度が保持できなくな
る。まず、この透明基板２１の洗浄を行う（図５（ａ）
参照）。FIG. 5 is an explanatory view of a process of forming a thin film EL element. In FIG. 5, the transparent substrate 21 has a thickness of 50 to
A 200 μm thin glass substrate is used. When the thickness of this transparent substrate is 200 μm or more, adjacent reflected light is mixed into the solid-state image sensor 10, resulting in poor resolution.
If the thickness is less than 50 μm, the strength of the substrate cannot be maintained. First, the transparent substrate 21 is washed (FIG. 5A).
reference).
【００２７】次に、透明基板２１上に透明電極２２とな
るＩＴＯ（インジウムすず酸化物）を成膜し（図５
（ｂ）参照）、このＩＴＯ膜をパターニングし（図５
（ｃ）参照）、その上に絶縁膜２３を形成する。この絶
縁膜２３は例えばＳｉＯ2 が主成分であるＳＯＧ（Ｓｐ
ｉｎ Ｏｎ Ｇｌａｓｓ）膜を成膜する（図５（ｄ）参
照）。この時、必要に応じて水素化処理を行いＩＴＯの
特性を良好にする（抵抗を小さくし、光の透明率を向上
する）。Next, ITO (Indium Tin Oxide) to be the transparent electrode 22 is formed on the transparent substrate 21 (see FIG. 5).
(See (b)), and patterning this ITO film (see FIG. 5).
(See (c)), and the insulating film 23 is formed thereon. The insulating film 23 is SiO 2 is a main component for example SOG (Sp
An in-on glass) film is formed (see FIG. 5D). At this time, hydrogenation treatment is performed as necessary to improve the characteristics of ITO (reduce resistance and improve light transparency).
【００２８】次に、この絶縁膜２３をパターニングし
（図５（ｅ）参照）、有機ＥＬ膜２４を抵抗加熱でマス
ク蒸着する（図５（ｆ）参照）。この有機ＥＬ膜２４
は、図５（ｆ）のように例えば電子輸送層２４−１、正
孔輸送層２４−２、発光層２４−３の３層よりなる。Next, the insulating film 23 is patterned (see FIG. 5E), and the organic EL film 24 is mask-deposited by resistance heating (see FIG. 5F). This organic EL film 24
5F is composed of, for example, three layers of an electron transport layer 24-1, a hole transport layer 24-2, and a light emitting layer 24-3.
【００２９】さらにＭｇＡｇ（マグネシウム銀合金）膜
２５を蒸着し（図５（ｇ）参照）、その後、配線電極２
６としてＡｌを蒸着又はスパッタリング等で成膜する
（図５（ｈ）参照）。Further, a MgAg (magnesium-silver alloy) film 25 is vapor-deposited (see FIG. 5G), and then the wiring electrode 2 is formed.
As 6 is formed a film of Al by vapor deposition or sputtering (see FIG. 5 (h)).
【００３０】このＡｌ膜をパターニングし配線電極２６
を形成し、薄膜ＥＬ（発光）素子３０を形成する（図５
（ｉ）参照）。この薄膜ＥＬ素子３０を図４（ｆ）の固
体撮像装置とを接着することにより図１で示したように
完全密着型の光源一体型固体撮像装置を超小型で安価に
得ることができる。The Al film is patterned to form the wiring electrode 26.
To form a thin film EL (light emitting) device 30 (FIG. 5).
(See (i)). By bonding this thin-film EL element 30 to the solid-state image pickup device of FIG. 4F, the light source integrated solid-state image pickup device of complete contact type as shown in FIG.
【００３１】〔第２実施例の説明〕図６は第２実施例の
説明図であり、密着型の固体撮像装置を示す。図６にお
いて、基板１上に固体撮像素子１０と駆動回路２０を形
成し、透明基板２１上に薄膜発光素子３０を形成し、次
に、この基板１と透明基板２１とを、それぞれの素子が
配置された面が合わされるように透明の接着剤２７で接
着するものであり、図１で示すものと同じ構成のため、
同様に製造することができる。[Explanation of Second Embodiment] FIG. 6 is an explanatory view of the second embodiment, showing a contact type solid-state imaging device. In FIG. 6, the solid-state imaging device 10 and the driving circuit 20 are formed on the substrate 1, the thin-film light emitting device 30 is formed on the transparent substrate 21, and then the substrate 1 and the transparent substrate 21 are respectively connected to each other. It is adhered with a transparent adhesive 27 so that the arranged surfaces are aligned, and because it has the same configuration as that shown in FIG. 1,
It can be manufactured similarly.
【００３２】この場合、原稿２８の読み取りは、セルフ
ォックレンズアレイ２９を介して行われる。これによ
り、セルフォックレンズアレイ２９により焦点深度が深
くなるため、透明基板２１は、図１のように薄板ガラス
を使用する必要はなく、２００μｍ以上の普通のガラス
基板を使用することができる。In this case, the reading of the original 28 is performed via the SELFOC lens array 29. As a result, the depth of focus is increased by the SELFOC lens array 29, so that it is not necessary to use thin glass as the transparent substrate 21 as in FIG. 1, and an ordinary glass substrate of 200 μm or more can be used.
【００３３】このため、セルフォックレンズアレイ２９
は必要になるが透明基板２１として安価なものを使用す
ることができる。また前記説明では、有機ＥＬ膜を電子
輸送層、正孔輸送層、発光層の３層構成のものについて
行ったが、本発明は勿論これに限定されるものではな
く、例えば、電子輸送層（発光層）と正孔輸送層又は、
電子輸送層と正孔輸送層（発光層）の如き２層構成のも
のを使用してもよい。Therefore, the Selfoc lens array 29
However, an inexpensive substrate can be used as the transparent substrate 21. In the above description, the organic EL film has a three-layer structure including an electron transport layer, a hole transport layer, and a light emitting layer, but the present invention is not limited to this, and for example, an electron transport layer ( Light emitting layer) and a hole transport layer, or
A two-layer structure such as an electron transport layer and a hole transport layer (light emitting layer) may be used.
【００３４】[0034]
【発明の効果】以上説明したように本発明によれば次の
ような効果がある。 （１）固体撮像装置の固体撮像素子部の基板は透明でな
くともよいため、固体撮像素子を基板の種類を問わずに
製造することができ、コストダウンを図ることができ
る。As described above, the present invention has the following effects. (1) Since the substrate of the solid-state imaging device section of the solid-state imaging device does not have to be transparent, the solid-state imaging device can be manufactured regardless of the type of the substrate, and the cost can be reduced.
【００３５】（２）薄膜発光素子が形成された透明基板
と、固体撮像素子が形成された基板とを接着することに
より超小型で安価な光源一体型固体撮像装置を供給する
ことができる。(2) By bonding the transparent substrate on which the thin film light emitting element is formed and the substrate on which the solid state image pickup element is formed, it is possible to supply an ultra-compact and inexpensive solid state image pickup device with integrated light source.
【００３６】（３）薄膜発光素子の薄膜発光部は、発光
ダイオードのような、点光源と異なり、面光源のため、
読み取り原稿をむらなく照射することができる。上記効
果の外、各請求項に対して次のような効果がある。(3) Unlike a point light source such as a light emitting diode, the thin film light emitting portion of the thin film light emitting element is a surface light source,
The scanned document can be evenly illuminated. In addition to the above effects, the following effects are obtained for each claim.
【００３７】（４）請求項１及び２に記載された発明に
よれば、薄膜発光素子が形成された透明基板と、固体撮
像素子が形成された基板とを透明接着剤等で一体化する
ことにより超小型で安価に製造することができる。(4) According to the invention described in claims 1 and 2, the transparent substrate on which the thin film light emitting device is formed and the substrate on which the solid-state image pickup device is formed are integrated with a transparent adhesive or the like. Thus, it can be manufactured at a very small size and at low cost.
【００３８】（５）請求項３に記載された発明によれ
ば、透明基板の厚さを５０〜２００μｍとすることによ
り完全密着型とすることができる。 （６）請求項４に記載された発明によれば、薄膜ガラス
でない安価な透明基板を使用することができる。(5) According to the invention described in claim 3, a perfect adhesion type can be obtained by setting the thickness of the transparent substrate to 50 to 200 μm. (6) According to the invention described in claim 4, an inexpensive transparent substrate that is not thin film glass can be used.
【図１】本発明の１実施例構成図である。FIG. 1 is a configuration diagram of an embodiment of the present invention.
【図２】本発明の１実施例におけるフォトトランジスタ
の説明図である。FIG. 2 is an explanatory diagram of a phototransistor according to an embodiment of the present invention.
【図３】本発明の１実施例における固体撮像素子の形成
工程説明図（１）である。FIG. 3 is an explanatory diagram (1) of a process of forming a solid-state image sensor according to one embodiment of the present invention.
【図４】本発明の１実施例における固体撮像素子の形成
工程説明図（２）である。FIG. 4 is an explanatory view (2) of a process of forming a solid-state image sensor according to the first embodiment of the present invention.
【図５】本発明の１実施例における薄膜ＥＬ素子の形成
工程説明図である。FIG. 5 is a diagram illustrating a process of forming a thin film EL element according to an example of the present invention.
【図６】本発明の第２実施例の説明図である。FIG. 6 is an explanatory diagram of a second embodiment of the present invention.
【図７】従来例の説明図である。FIG. 7 is an explanatory diagram of a conventional example.
１ 基板 １０ 固体撮像素子 ２０ 読み取り駆動回路 ２１ 透明基板 ２４ エレクトロルミネセンス（ＥＬ）膜 ２７ 透明接着剤 ２８ 原稿 ３０ 薄膜発光素子 DESCRIPTION OF SYMBOLS 1 Substrate 10 Solid-state imaging device 20 Reading drive circuit 21 Transparent substrate 24 Electroluminescence (EL) film 27 Transparent adhesive 28 Original document 30 Thin film light emitting device
Claims (4)
透明基板と前記基板とを透明体で一体化することを特徴
とした光源一体型固体撮像装置。1. A thin film light emitting device formed on a transparent substrate, and a solid-state imaging device formed on the substrate, wherein the transparent substrate and the transparent substrate are transparent so that the surfaces on which the respective devices are arranged are aligned. A solid-state imaging device integrated with a light source characterized by being integrated with the body.
透明体として、透明接着剤を使用することを特徴とした
請求項１記載の光源一体型固体撮像装置。2. The light source integrated solid-state image pickup device according to claim 1, wherein a transparent adhesive is used as a transparent body that integrates the transparent substrate and the substrate.
形成した薄膜発光素子と、 基板上に形成した固体撮像素子とを備え、 それぞれの素子を配置した面が合わされるように、前記
透明基板と前記基板とを接着することを特徴とした完全
密着型の光源一体型固体撮像装置。3. A thin film light emitting device formed on a transparent substrate having a thickness of 50 to 200 μm, and a solid-state image pickup device formed on the substrate, wherein the transparent surface is arranged so that the surfaces on which the respective devices are arranged are aligned. A complete contact type light source integrated solid-state imaging device, characterized in that a substrate and the substrate are bonded together.
透明基板と前記基板とを接着することを特徴とした密着
型の光源一体型固体撮像装置。4. A thin film light emitting device formed on a transparent substrate, and a solid-state imaging device formed on the substrate, wherein the transparent substrate and the substrate are bonded so that the surfaces on which the respective devices are arranged are aligned. A solid-state imaging device integrated with a light source, which is a contact type.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24516294A JP3561302B2 (en) | 1994-10-11 | 1994-10-11 | Solid-state imaging device with integrated light source |
| US08/541,871 US5627364A (en) | 1994-10-11 | 1995-10-10 | Linear array image sensor with thin-film light emission element light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24516294A JP3561302B2 (en) | 1994-10-11 | 1994-10-11 | Solid-state imaging device with integrated light source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08111516A true JPH08111516A (en) | 1996-04-30 |
| JP3561302B2 JP3561302B2 (en) | 2004-09-02 |
Family
ID=17129540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24516294A Expired - Fee Related JP3561302B2 (en) | 1994-10-11 | 1994-10-11 | Solid-state imaging device with integrated light source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3561302B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003100450A (en) * | 2001-06-20 | 2003-04-04 | Semiconductor Energy Lab Co Ltd | Light emitting equipment and its producing method |
| EP1122792A3 (en) * | 2000-01-31 | 2005-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Contact type area sensor and display device having contact type area sensor |
| JP2007067381A (en) * | 2005-08-05 | 2007-03-15 | Semiconductor Energy Lab Co Ltd | Light emitting device and manufacturing method thereof |
| US7420208B2 (en) | 2001-06-20 | 2008-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
| US7728326B2 (en) | 2001-06-20 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic apparatus |
| US8610155B2 (en) | 2008-11-18 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and cellular phone |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010153449A (en) | 2008-12-24 | 2010-07-08 | Seiko Epson Corp | Light source integrated photoelectric conversion apparatus |
-
1994
- 1994-10-11 JP JP24516294A patent/JP3561302B2/en not_active Expired - Fee Related
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1122792A3 (en) * | 2000-01-31 | 2005-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Contact type area sensor and display device having contact type area sensor |
| US7525523B2 (en) | 2000-01-31 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising pixel having light receiving portion and display portion |
| US8456459B2 (en) | 2000-01-31 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Adhesion type area sensor and display device having adhesion type area sensor |
| US8830217B2 (en) | 2000-01-31 | 2014-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Adhesion type area sensor and display device having adhesion type area sensor |
| JP2003100450A (en) * | 2001-06-20 | 2003-04-04 | Semiconductor Energy Lab Co Ltd | Light emitting equipment and its producing method |
| US9178168B2 (en) | 2001-06-20 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | White light emitting device |
| US7420208B2 (en) | 2001-06-20 | 2008-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
| US7728326B2 (en) | 2001-06-20 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic apparatus |
| US9276224B2 (en) | 2001-06-20 | 2016-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting device having dual flexible substrates |
| US9166180B2 (en) | 2001-06-20 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having an organic light emitting diode that emits white light |
| US8138502B2 (en) | 2005-08-05 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and manufacturing method thereof |
| KR101298949B1 (en) * | 2005-08-05 | 2013-08-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light-emitting device and manufacturing method thereof |
| US8497512B2 (en) | 2005-08-05 | 2013-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and manufacturing method thereof |
| JP2007067381A (en) * | 2005-08-05 | 2007-03-15 | Semiconductor Energy Lab Co Ltd | Light emitting device and manufacturing method thereof |
| US8610155B2 (en) | 2008-11-18 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and cellular phone |
| US10269883B2 (en) | 2008-11-18 | 2019-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device method for manufacturing the same, and cellular phone |
| US10600853B2 (en) | 2008-11-18 | 2020-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and cellular phone |
| US10896941B2 (en) | 2008-11-18 | 2021-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and cellular phone |
| US11289558B2 (en) | 2008-11-18 | 2022-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and cellular phone |
| US11818925B2 (en) | 2008-11-18 | 2023-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and cellular phone |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3561302B2 (en) | 2004-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5627364A (en) | Linear array image sensor with thin-film light emission element light source | |
| US5262654A (en) | Device for reading an image having a common semiconductor layer | |
| US8338867B2 (en) | Highly sensitive photo-sensing element and photo-sensing device using the same | |
| CN100448017C (en) | Organic light emitting display device and method of fabricating the same | |
| US5574293A (en) | Solid state imaging device using disilane | |
| US4517733A (en) | Process for fabricating thin film image pick-up element | |
| US4351856A (en) | Semiconductor device and method of manufacturing the same | |
| JP3561302B2 (en) | Solid-state imaging device with integrated light source | |
| US6452212B1 (en) | Semiconductor device and method for operating the same | |
| JP3628730B2 (en) | Line light emitting device photosensitive drum integrated cartridge | |
| JP3981055B2 (en) | Image sensor with light source | |
| JP3501379B2 (en) | Image sensor with light source | |
| KR100634543B1 (en) | Single crystalline silicon tft organic light emitting display and fabrication method thereof | |
| JPH08111742A (en) | Light source integrated type solid-state image pickup device | |
| US5731600A (en) | Image sensor device on insulating surface | |
| JPS6140143B2 (en) | ||
| JPH02143573A (en) | Photoelectric conversion device | |
| JP2899052B2 (en) | Thin film semiconductor device | |
| US6011291A (en) | Video display with integrated control circuitry formed on a dielectric substrate | |
| JP2823853B2 (en) | Manufacturing method of image reading device | |
| JP3404025B2 (en) | Image sensor | |
| JPH0426789B2 (en) | ||
| JP2805830B2 (en) | Method for manufacturing semiconductor device | |
| JP3247119B2 (en) | Image sensor | |
| JP2692144B2 (en) | Line sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20030311 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20040525 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040528 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090604 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100604 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100604 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110604 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110604 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120604 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120604 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130604 Year of fee payment: 9 |
|
| LAPS | Cancellation because of no payment of annual fees |