JPH0758690B2 - Thin film manufacturing apparatus and method - Google Patents
Thin film manufacturing apparatus and methodInfo
- Publication number
- JPH0758690B2 JPH0758690B2 JP59032649A JP3264984A JPH0758690B2 JP H0758690 B2 JPH0758690 B2 JP H0758690B2 JP 59032649 A JP59032649 A JP 59032649A JP 3264984 A JP3264984 A JP 3264984A JP H0758690 B2 JPH0758690 B2 JP H0758690B2
- Authority
- JP
- Japan
- Prior art keywords
- glow discharge
- thin film
- discharge
- forming
- manufacturing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Description
【発明の詳細な説明】 本発明はグロー放電を利用する薄膜製造装置に関し、特
に放電開始手段を設けた装置およびその装置を用いる薄
膜の形成方法に関する。The present invention relates to a thin film manufacturing apparatus using glow discharge, and more particularly to an apparatus provided with discharge starting means and a thin film forming method using the apparatus.
グロー放電を利用する薄膜作成技術は、非晶質薄膜や微
結晶含有薄膜の作成に最近大いに検討されている。これ
らの薄膜の用途は太陽電池、光センサー、イメージング
デバイス、薄膜トランジスタ、感光ドラム等に広く開け
ている。A thin film forming technique using glow discharge has recently been greatly studied for forming an amorphous thin film or a thin film containing microcrystals. Applications of these thin films are widely applied to solar cells, optical sensors, imaging devices, thin film transistors, photosensitive drums, and the like.
これらデバイスを作成するにあたり、薄膜は単一層を形
成するのみで機能させることは稀であり、通常は基板、
導体層、半導体層、絶縁対層などと共に積層形成あるい
は並置形成されて機能させられる。それ故薄膜の作成に
おいては、界面をいかに制御して形成するかが目的とす
るデバイスを機能させる上で非常に重要な問題であっ
た。通常界面を形成するためには一旦放電を停止して、
つぎに新たなる原料を導入して、それに適合する形成条
件で放電を開始する方法で行なわれている。即ち界面を
形成するためには多くの場合、新たなる放電の開始を伴
うものである。しかして、この場合、放電中には高エネ
ルギーのイオンが存在し、これが先に形成された薄膜を
損傷したり、先に形成された薄膜中に存在する不純物を
新たに形成する薄膜中に自動ドープする原因となる。か
かるイオンによる弊害は放電電力が大きくなればなるだ
け増大する傾向にある。しかるに従来、グロー放電を開
始させるには通常安定な放電を維持するに必要な放電電
力（以下安定放電維持電力という）よりも数倍以上大き
な電力を必要としていたため、上記した弊害がしばしば
発生し、この放電開始電力を小さくすることが望まれて
いた。またガス原料、薄膜形成条件、薄膜製造装置の形
状等を変更するとグロー放電用始電力も変化し、極端な
場合は安定放電維持電力の十数倍の開始電力を必要とす
ることもあった。このように界面形成時に高放電開始電
力を印加せざるを得ない時には、得られるデバイスの特
性が必然的に低下するという問題があった。In making these devices, thin films rarely work by forming a single layer, typically a substrate,
It is formed by stacking or juxtaposed with a conductor layer, a semiconductor layer, an insulating layer, and the like to function. Therefore, in the production of a thin film, how to control and form the interface was a very important issue in order to make the intended device function. In order to form a normal interface, stop the discharge once,
Then, a new raw material is introduced, and a discharge is started under a forming condition suitable for the new raw material. That is, in many cases, in order to form the interface, a new discharge is started. In this case, however, high-energy ions are present during the discharge, which damages the thin film that was previously formed, or the impurities that are present in the thin film that was previously formed are newly formed in the thin film. It causes dope. The adverse effect of such ions tends to increase as the discharge power increases. However, in the past, in order to start the glow discharge, the discharge power normally required to maintain a stable discharge (hereinafter referred to as stable discharge maintaining power) was required to be several times or more, so the above-mentioned adverse effects often occur. It has been desired to reduce the discharge start power. Further, when the gas raw material, the thin film forming conditions, the shape of the thin film manufacturing apparatus, etc. are changed, the starting power for glow discharge also changes, and in extreme cases, the starting power that is more than ten times the stable discharge sustaining power may be required. Thus, there is a problem that the characteristics of the obtained device are inevitably deteriorated when the high discharge start power is applied at the time of forming the interface.
この問題を解決するために従来は、インピーダンスマッ
チングに工夫がこらされていたが、原料、条件、装置等
を変更した場合には、これとても満足な結果は得られな
かった。In order to solve this problem, impedance matching has been conventionally devised, but when raw materials, conditions, devices, etc. were changed, this was not a very satisfactory result.
本発明は、グロー放電の開始手段を設けることを着眼し
て本問題を克服した。The present invention has overcome this problem by focusing on providing a means for initiating glow discharge.
すなち、本発明は、基板加熱手段、ガス導入手段、真空
排気手段およびグロー放電手段を少くとも有するグロー
放電による薄膜製造装置において、グロー放電の能動的
開始手段を有することを特徴とする薄膜製造装置であ
り、および、グロー放電により二層以上の薄膜（以下多
層薄膜という）を形成する方法において、グロー放電の
能動的開始手段を用いることによって低電力密度でグロ
ー放電を開始する工程を含むことを特徴とする多層薄膜
製造方法を提供するものである。That is, the present invention is a thin-film manufacturing apparatus by glow discharge having at least a substrate heating means, a gas introduction means, a vacuum exhaust means, and a glow discharge means, characterized by having an active start means of glow discharge. A manufacturing apparatus, and a method for forming a thin film having two or more layers (hereinafter referred to as a multilayer thin film) by glow discharge, including a step of starting glow discharge at a low power density by using active means for starting glow discharge. The present invention provides a method for producing a multilayer thin film, which is characterized by the above.
以下、図面を参照しながら、本発明を詳細に説明する。Hereinafter, the present invention will be described in detail with reference to the drawings.
本発明はグロー放電の能動的開始手段として、たとえば
第１図に示すような放電管10又は第２図に示すような高
電圧印加端子20を好ましい手段として使用するものであ
る。The present invention uses, for example, the discharge tube 10 as shown in FIG. 1 or the high voltage applying terminal 20 as shown in FIG. 2 as a preferable means for active initiation of glow discharge.
放電管としては、ガイスラー管が最も便利に使用される
ので以下ガイスラー管を例にとって説明する。As a discharge tube, a Geisler tube is most conveniently used, so the Geisler tube will be described below as an example.
まず第１図に示すごとく薄膜製造装置のグロー放電室30
の内部とガイスラー管10の内部とが連通するように設備
する。ガイスラー管10はグロー放電室30に直接とりつけ
てもよいが、好ましくはシャッター、金属メッシュ40、
変曲部分50等を介在させて設けられる。ガイスラー管の
電極60は外部に設備した高電圧発生手段（図示せず）接
続されている。ガイスラー管はグロー放電の開始時期す
なわち多層薄膜を形成するに際し、新しい界面を形成す
る時にのみ必要とされて薄膜の本体部分を形成する期間
中には必要とされない。なお、ガイスラー管がグロー放
電室30に直接設備された場合には、薄膜製造期間に、ガ
イスラー管にも薄膜が生成する結果ガイスラー管の作用
効果が低減し、長期間の使用が困難になる。First, as shown in FIG. 1, the glow discharge chamber 30 of the thin film manufacturing apparatus is shown.
The equipment is installed so that the inside of the tube and the inside of the Geisler tube 10 communicate with each other. The Geisler tube 10 may be directly attached to the glow discharge chamber 30, but is preferably a shutter, a metal mesh 40,
It is provided with an inflection portion 50 and the like interposed. The electrode 60 of the Geisler tube is connected to a high voltage generating means (not shown) provided outside. The Geisler tube is required only at the start of glow discharge, that is, when forming a multi-layered thin film, only when forming a new interface, and not during formation of the main body portion of the thin film. When the Geisler tube is directly installed in the glow discharge chamber 30, a thin film is also formed in the Geisler tube during the thin film manufacturing period, and as a result, the function and effect of the Geisler tube is reduced, and long-term use becomes difficult.
第２図には、高電圧印加端子20を設けた薄膜製造装置を
示しているが、ガイスラー管について述べたことがその
まま妥当する。FIG. 2 shows a thin-film manufacturing apparatus provided with the high-voltage applying terminal 20, but the description of the Geisler tube is still valid.
つぎに本発明の好ましい動作を実施態様を述べる。グロ
ー放電の開始手段として放電管を用いる場合には、グロ
ー放電手段である電極70に0.03W/cm2好ましくは0.01W/c
m2以下の電力を印加し、薄膜形成の原料ガスをガス導入
手段80を通して供給し真空排気手段90により5Torr以下
の真空度に保持する。基板温度が所望の値になった後
に、放電管たとえばガイスラー管の電極に接続している
高電圧印加手段たとえばインダクションコイルの如き手
段を用いて高電圧を１〜３秒間印加して放電を発生させ
る。この放電に誘起されて薄膜製造装置のグロー放電室
にもグロー放電が前述の如き0.01W/cm2以下の低電力密
度でスムースに開始されるのである。Next, preferred embodiments of the present invention will be described. When using a discharge tube as a means for starting glow discharge, the electrode 70 which is a glow discharge means 0.03 W / cm 2 preferably 0.01 W / c
A power of m 2 or less is applied, a raw material gas for forming a thin film is supplied through a gas introduction unit 80, and a vacuum exhaust unit 90 maintains a vacuum degree of 5 Torr or less. After the substrate temperature reaches a desired value, a high voltage is applied for 1 to 3 seconds using a high voltage applying means such as an induction coil connected to an electrode of a discharge tube such as a Geisler tube to generate a discharge. . Induced by this discharge, glow discharge is smoothly started in the glow discharge chamber of the thin film manufacturing apparatus at a low power density of 0.01 W / cm 2 or less as described above.
なお、該開始手段として高電圧印加端子20を用いる場合
には、たとえばテスラーコイル（図示せず）を用いてそ
の放電端子20を高電圧印加端子とする。前述の如くグロ
ー放電手段である電極70に0.03W/cm2好ましくは0.01W/c
m2以下の電力を印加し薄膜形成の原料ガスを供給し、真
空排気手段90により5Torr以下の真空度に保持する。基
板温度が所望の値になった後に、テスラーコイルの電源
を入れて１〜３秒間放電させると、これが引き金（トリ
ガー）となって、薄膜製造装置のグロー放電室にも、前
述の如き0.01W/cm2以下の低電力密度でグロー放電が開
始されるのである。このように本発明はグロー放電開始
電力を低くおさえることができるものであり、放電開始
のために従来必要であった高電力の印加をなくすことが
できる装置を提供するものである。本装置は、装置の材
質や大きさを限定しないので良質の薄膜や薄膜デバイス
の工学的な大型の規模での作成にも適している。When the high voltage applying terminal 20 is used as the starting means, for example, a Tesler coil (not shown) is used to make the discharge terminal 20 the high voltage applying terminal. As described above, the electrode 70 which is the glow discharge means has 0.03 W / cm 2 preferably 0.01 W / c.
A raw material gas for forming a thin film is supplied by applying electric power of m 2 or less, and the vacuum degree is maintained at 5 Torr or less by a vacuum evacuation means 90. After the substrate temperature reaches the desired value, when the power of the Tesler coil is turned on and discharged for 1 to 3 seconds, this triggers (trigger), and even in the glow discharge chamber of the thin film manufacturing apparatus, 0.01 W as described above. The glow discharge starts at a low power density of less than / cm 2 . As described above, the present invention can suppress the glow discharge starting power to a low level and provide an apparatus capable of eliminating the application of high power conventionally required for starting the discharge. Since the present apparatus does not limit the material and size of the apparatus, it is suitable for the production of high quality thin films and thin film devices on an engineering large scale.
以下、実施例においてさらに具体的に本発明の装置を用
いて多層薄膜）より具体的には非晶室シリコン太陽電池
を形成する場合について述べる。Hereinafter, in the examples, the case of forming an amorphous room silicon solar cell more specifically by using the apparatus of the present invention will be described.
なお、本発明はこれら実施例に何ら限定されるものでは
ないことはもちろんである。Needless to say, the present invention is not limited to these examples.
（実施例） 第１図は、基板加熱手段100、真空排気手段90、ガス導
入手段80および基板110を設置することのできる平行平
板電極70′およひ高周波電力印加電極70を有するグロー
放電室30に金属メッシュ40および変曲部分50を介してガ
イスラー管10が設備されている薄膜形成装置の一部であ
る。基板110には酸化スズ膜よりなる透明電極が形成さ
れている。基板温度を150〜400℃の間で適宜選択し、グ
ロー放電室内の圧力を5Torr以下に設定する。まずＰ層
の形成はSiH4、CH4、B2H6をH2で希釈して行なう。これ
らの流量比はSiH4：CH4＝7:3SiH4：H2＝1:6であり、B2H
6はSiH4に対し約0.1％の割合で添加した。これらの原料
ガス混合物を流しながら圧力1.0Torr、形成温度250℃と
して高周波電力印加電極70の入力側に0.01W/cm2の電力
を印加した。ついでインダクションコイルの電源を入れ
ガイスラー管を２秒間放電させた。この瞬間に該電極70
の入力側に設備されているパワーメータの反射波は減少
し、グロー放電室に放電が発生したことを確認した。放
電開始後、所定の放電電力においてＰ層を約100A形成し
た後放電を停止した。つぎに真空を破ることなくｉ層形
成室へと基板110を移送した。ｉ層形成室も第１図に示
した装置を有している。ｉ層はSi2H6ガス単独で形成し
た。Si2H6ガスを流しつつ圧力を0.15Torr形成温度を300
℃に調整した後、高周波電力印加電極70に0.05W/cm2の
電力を印加した。ついでＰ層形成時と同様にガイスラー
管を放電させた。この瞬間、グロー放電室30の電極70−
70′間で暗く弱く発光が観察されてグロー放電が開始し
たことを確認した。ついで所望の放電電力においてｉ層
を約5000Å形成した後放電を停止した。つぎに真空を破
ることなくｎ層形成室へと基板110を移送した。ｎ層はS
iH4、PH3をH2で希釈して行なう。これらの流量比はSi
H4：H2＝1:8であり、PH3はSiH4に対し約0.8％の割合で
添加した。これらの原料ガス混合物を流しながら圧力0.
5Torr、形成温度250℃として高周波電力印加電極70の入
力側に0.01W/cm2の電力を印加した。ついでＰ層、ｉ層
形成時と同様にガイスラー管を放電させた。この瞬間に
該電極70の入力側の反射波は減少し、グロー放電室に放
電が発生したことを確認した。ついで所望の放電電力に
おいてｎ層を約150Å形成した後放電を停止した。基板
を冷却室へ移して、冷却後真空蒸着室へ写し、アルミニ
ウムを蒸着し電極とした。基板側からAMI（100mw/cm2）
の光を照射して光電持性を測定した。(Embodiment) FIG. 1 shows a glow discharge chamber having a parallel plate electrode 70 'and a high frequency power applying electrode 70 on which a substrate heating means 100, a vacuum exhaust means 90, a gas introducing means 80 and a substrate 110 can be installed. It is a part of a thin film forming apparatus in which the Geisler tube 10 is installed on the metal mesh 40 and the inflection portion 50 on the 30. A transparent electrode made of a tin oxide film is formed on the substrate 110. The substrate temperature is appropriately selected between 150 and 400 ° C, and the pressure in the glow discharge chamber is set to 5 Torr or less. First, the P layer is formed by diluting SiH 4 , CH 4 , and B 2 H 6 with H 2 . These flow ratio SiH 4: CH 4 = 7: 3SiH 4: H 2 = 1: a 6, B 2 H
6 was added to SiH 4 at a ratio of about 0.1%. While flowing these raw material gas mixtures, a power of 0.01 W / cm 2 was applied to the input side of the high frequency power application electrode 70 at a pressure of 1.0 Torr and a formation temperature of 250 ° C. Then, the induction coil was turned on to discharge the Geisler tube for 2 seconds. At this moment the electrode 70
It was confirmed that the reflected wave of the power meter installed on the input side of the PDP decreased, and discharge was generated in the glow discharge chamber. After starting the discharge, the P layer was formed at about 100 A at a predetermined discharge power, and then the discharge was stopped. Next, the substrate 110 was transferred to the i-layer forming chamber without breaking the vacuum. The i-layer forming chamber also has the apparatus shown in FIG. The i layer was formed using S i2 H 6 gas alone. Flow pressure of S i2 H 6 is 0.15 Torr and formation temperature is 300
After adjusting to ° C, 0.05 W / cm 2 of power was applied to the high frequency power application electrode 70. Then, the Geisler tube was discharged in the same manner as when the P layer was formed. At this moment, the electrode 70 of the glow discharge chamber 30
It was confirmed that glow discharge started by observing dark and weak light emission between 70 '. Then, the i layer was formed at about 5000 Å at a desired discharge power, and then the discharge was stopped. Next, the substrate 110 was transferred to the n-layer forming chamber without breaking the vacuum. n layer is S
Dilute iH 4 and PH 3 with H 2 . These flow rate ratios are Si
H 4 : H 2 = 1: 8, and PH 3 was added at a ratio of about 0.8% with respect to SiH 4 . Flowing these source gas mixtures, the pressure is zero.
A power of 0.01 W / cm 2 was applied to the input side of the high-frequency power applying electrode 70 with a forming temperature of 5 Torr and a temperature of 250 ° C. Then, the Geisler tube was discharged as in the case of forming the P layer and the i layer. At this moment, the reflected wave on the input side of the electrode 70 decreased, and it was confirmed that discharge occurred in the glow discharge chamber. Then, the discharge was stopped after forming about 150Å n layers at the desired discharge power. The substrate was transferred to a cooling chamber, cooled, transferred to a vacuum deposition chamber, and aluminum was deposited to form an electrode. From board side A MI (100mw / cm 2 )
Photoelectricity was measured by irradiating the light.
（比較例） 比較のために本発明における能動的なグロー放電開始手
段を用いない場合について以下に示す。薄膜の形成条件
は先に述べた実施例と同じにした。まずＰ層において
は、インピーダンスマッチングを調整したにもかかわら
ず、0.01W/cm2では放電開始せず0.056W/cm2でようやく
放電した。しかしながら、グロー放電開始のために高周
波電力印加電極70に0.056W/cm2の電力を印加してから放
電開始までに約２分40秒もの誘導期間を必要とした。ま
たｉ層では0.056W/cm2では放電せず0.1W/cm2でようやく
放電をした。しかるにこのときも約５分30秒の誘導期間
を必要とした。ｎ層はＰ層と同じ放電電力で放電が開始
したが約２分の誘導期間が必要であった。(Comparative Example) For comparison, the case where the active glow discharge initiation means in the present invention is not used is shown below. The conditions for forming the thin film were the same as those in the above-mentioned embodiment. First, in the P layer, although impedance matching was adjusted, discharge did not start at 0.01 W / cm 2 and finally discharge at 0.056 W / cm 2 . However, an induction period of about 2 minutes and 40 seconds was required from the application of 0.056 W / cm 2 of power to the high frequency power application electrode 70 to start glow discharge to the start of discharge. In the i layer was finally discharged at 0.1 W / cm 2 without discharging the 0.056W / cm 2. However, this time also required an induction period of about 5 minutes and 30 seconds. The n-layer started to discharge with the same discharge power as the P-layer, but required an induction period of about 2 minutes.
実施例と比較例とで光電特性を比較してみると開放端電
圧、短絡電流のいずれにおいても第３図に１例を示した
ように本実施例の方がはるかに良好であり、その結果得
られた光電変換効率は本実施例が7.5％〜8.5％であるの
に対し、比較例は4.2〜5.6％であった。Comparing the photoelectric characteristics between the example and the comparative example, the present example is far better in both open circuit voltage and short circuit current as shown in FIG. The obtained photoelectric conversion efficiency was 7.5% to 8.5% in this example, while 4.2 to 5.6% in the comparative example.
すなわち、比較例においては、多層薄膜を形成する場
合、高い放電開始電力を長時間印加することによりデバ
イスの特性（光電変更効率）が大巾に低下せざるを得な
かったのに対し、本発明は低放電開始電力でしかも瞬間
的に容易に放電が開始するため、かかる特性の低下を伴
うことなく高光電変換効率が確保できることがわかる。
また、他の比較例として次の実験を行った。実施例にお
いて設備されている金属メッシュ40および変曲部分50を
介さずに直接ガイスラー管10を設備した薄膜形成装置を
用いて、実施例に従って非晶質シリコン太陽電池を形成
した。まず、グロー放電形態は、ガイスラー管10により
変化し、その結果、非晶質シリコン太陽電池の均一形成
が困難であった。実施例ではｉ層が約5000Å形成できた
が、本比較例においては、2500Å〜7000Åへと膜厚が変
化し、変換効率も5.1〜8.1％に変化した。また、この比
較例を繰り返して行ったところ、４回目からは、ガイス
ラー管10は薄膜の形成のために、能動的開始手段として
も作用しなくなって仕舞った。That is, in the comparative example, when a multi-layer thin film was formed, the characteristics of the device (photoelectric conversion efficiency) had to be drastically reduced by applying high discharge start power for a long time. It can be seen that since the electric discharge is low and the electric discharge easily starts instantaneously, the high photoelectric conversion efficiency can be secured without the deterioration of the characteristics.
The following experiment was conducted as another comparative example. An amorphous silicon solar cell was formed according to the example by using the thin film forming apparatus in which the Geisler tube 10 was directly installed without the metal mesh 40 and the inflection portion 50 installed in the example. First, the glow discharge form was changed by the Geisler tube 10, and as a result, it was difficult to uniformly form an amorphous silicon solar cell. In the example, the i layer could be formed to about 5000Å, but in this comparative example, the film thickness changed from 2500Å to 7000Å and the conversion efficiency also changed to 5.1 to 8.1%. Further, when this comparative example was repeatedly performed, from the fourth time onward, the Geisler tube 10 did not work as an active starting means because of the formation of a thin film, and it ended up.
第１図は放電管を用いた場合の本発明の薄膜製造装置の
模式的な断面図である。第２図は高電圧印加端子を用い
た場合の本発明の薄膜製造装置の模式的な断面図であ
る。第３図は本実施例により作成したｐ−ｉ−ｎ型非晶
質シリコン太陽電池の特性および比較のための太陽電池
の特性を同一図面上に示すグラフである。第３図におい
て、Ａは本発明の実施例の太陽電池のＩ−Ｖ曲線、Ｂは
比較例のＩ−Ｖ曲線である。FIG. 1 is a schematic sectional view of a thin film manufacturing apparatus of the present invention when a discharge tube is used. FIG. 2 is a schematic cross-sectional view of the thin film manufacturing apparatus of the present invention when a high voltage applying terminal is used. FIG. 3 is a graph showing the characteristics of the p-i-n type amorphous silicon solar cell prepared according to this example and the characteristics of the solar cell for comparison on the same drawing. In FIG. 3, A is an IV curve of the solar cell of the example of the present invention, and B is an IV curve of the comparative example.
Claims (3)
段およびグロー放電手段を少くとも有するグロー放電に
よる薄膜製造装置において、シャッター、金属メッシ
ュ、および変曲部分のいずれか一つ以上の部材を介在さ
せることによりグロー放電プラズマに暴露されない位置
にグロー放電の能動的開始手段としての放電管または高
電圧印加端子を有することを特徴とする薄膜製造装置。1. A thin-film manufacturing apparatus by glow discharge having at least a substrate heating means, a gas introduction means, a vacuum exhaust means, and a glow discharge means, wherein at least one member of a shutter, a metal mesh, and an inflection part is provided. A thin film manufacturing apparatus having a discharge tube or a high-voltage applying terminal as an active starting means of glow discharge at a position not exposed to glow discharge plasma by being interposed.
層薄膜という）を形成する方法において、シャッター、
金属メッシュ、および変曲部分のいずれか一つ以上の部
材を介在させることによりグロー放電プラズマに暴露さ
れない位置に設けられたグロー放電の能動的開始手段を
用いることによって低電力密度でグロー放電を開始する
工程を含むことを特徴とする多層薄膜製造方法。2. A method for forming a thin film having two or more layers (hereinafter referred to as a multilayer thin film) by glow discharge, comprising a shutter,
Start glow discharge at low power density by using active means for glow discharge provided at a position not exposed to glow discharge plasma by interposing one or more members of metal mesh and inflection part A method for producing a multilayer thin film, comprising the step of:
際し、第１の薄膜を形成後グロー放電を停止し、グロー
放電プラズマに暴露されない位置に設けられたグロー放
電の能動的開始手段を用いることによって低電力密度で
再びグロー放電を開始し、しかる後より小なる放電維持
電力によりグロー放電を継続して第１の薄膜上に第２の
薄膜を形成する工程を含む特許請求の範囲第２項記載の
方法。3. When forming any two thin films to be laminated, a glow discharge is stopped after forming the first thin film, and active means for starting glow discharge is provided at a position not exposed to glow discharge plasma. A method for forming a second thin film on a first thin film by restarting glow discharge at a low power density by using the glow discharge, and then continuing glow discharge with a smaller discharge maintaining power. The method according to item 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59032649A JPH0758690B2 (en) | 1984-02-24 | 1984-02-24 | Thin film manufacturing apparatus and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59032649A JPH0758690B2 (en) | 1984-02-24 | 1984-02-24 | Thin film manufacturing apparatus and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60177620A JPS60177620A (en) | 1985-09-11 |
| JPH0758690B2 true JPH0758690B2 (en) | 1995-06-21 |
Family
ID=12364703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59032649A Expired - Lifetime JPH0758690B2 (en) | 1984-02-24 | 1984-02-24 | Thin film manufacturing apparatus and method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0758690B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9564963B2 (en) | 1995-06-30 | 2017-02-07 | Interdigital Technology Corporation | Automatic power control system for a code division multiple access (CDMA) communications system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5917237A (en) * | 1982-07-20 | 1984-01-28 | Anelva Corp | Glow discharge device |
-
1984
- 1984-02-24 JP JP59032649A patent/JPH0758690B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9564963B2 (en) | 1995-06-30 | 2017-02-07 | Interdigital Technology Corporation | Automatic power control system for a code division multiple access (CDMA) communications system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60177620A (en) | 1985-09-11 |
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