JPH07322153A - Solid-state image pickup element - Google Patents

Solid-state image pickup element

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Publication number
JPH07322153A
JPH07322153A JP7142152A JP14215295A JPH07322153A JP H07322153 A JPH07322153 A JP H07322153A JP 7142152 A JP7142152 A JP 7142152A JP 14215295 A JP14215295 A JP 14215295A JP H07322153 A JPH07322153 A JP H07322153A
Authority
JP
Japan
Prior art keywords
package
resin
light
focus detection
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7142152A
Other languages
Japanese (ja)
Other versions
JP2809133B2 (en
Inventor
Tomoyuki Kuwata
知由己 桑田
Takeshi Utagawa
健 歌川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP7142152A priority Critical patent/JP2809133B2/en
Publication of JPH07322153A publication Critical patent/JPH07322153A/en
Application granted granted Critical
Publication of JP2809133B2 publication Critical patent/JP2809133B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Automatic Focus Adjustment (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To suppress the effect of dust stuck to the light incidence face without providing a glass plate on the surface of a resin package. CONSTITUTION:The solid-state image pickup element is provided with photoelectric transducers 15a and 15b which the object image is formed on light reception face by a focus detection optical system, and the formed optical image is converted into an electric signal and is outputted, ana this output is used for focus detection. With respect to this solid-state image pickup element, the light incidence surface of the package where photoelectric transducers 15a and 15b are sealed up with light-transmissive resin is a resin face as it is, and a distance d=Ce (C is the refractive index of the resin of the package) between the light reception face of photoelectric transducers and the incidence face of the resin package is determined so as to satisfy 15p<={e/(l-e)}g where (g), l, (p), and (e) are exit pupil dimensions of the focus detection optical system in the picture element array direction of photoelectric transducers, the length of the optical path expressed in terms of air between the exit pupil and the light reception face, the picture element pitch of photoelectric transducers, and the length of the optical path expressed in terms of air between the incidence surface of the package and the light reception face respectively.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、各種カメラ、光学測定
器等の光学機器に用いる像検出用光電変換素子を樹脂で
パッケージ化した固体撮像素子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device in which a photoelectric conversion element for image detection used in optical instruments such as various cameras and optical measuring instruments is packaged with resin.

【0002】[0002]

【従来の技術とその問題点】焦点検出装置に用いる従来
の固体撮像素子として、光電変換素子を透明な合成樹脂
材で封止し、その光入射面をガラス板で覆ったものが知
られている。ガラス板を用いずに透明樹脂材をそのまま
素子表面とすると、樹脂は一般に静電気を帯びやすく、
素子表面である光入射面に塵埃が付着し、正しい像情報
の検出を妨げ焦点検出誤差を招くという問題点がある。
そこで、防塵対策として素子表面にガラス板が貼着され
ている。静電気を帯びにくくする添加物を樹脂に添加す
ることも考えられるが、光の透過率が低下してしまい、
この種の封止パッケージには使用できない。
2. Description of the Related Art As a conventional solid-state image pickup device used in a focus detection device, a device in which a photoelectric conversion element is sealed with a transparent synthetic resin material and a light incident surface thereof is covered with a glass plate is known. There is. If the transparent resin material is used as it is as the element surface without using a glass plate, the resin generally tends to be charged with static electricity,
There is a problem that dust adheres to the light incident surface, which is the element surface, which prevents detection of correct image information and causes a focus detection error.
Therefore, as a dustproof measure, a glass plate is attached to the surface of the element. It is possible to add an additive to the resin to make it less likely to be charged with static electricity, but the light transmittance will decrease,
It cannot be used for this type of sealed package.

【0003】このため、素子表面にガラス板を備えた従
来の固体撮像素子においては、ガラスの材料費、ならび
にガラスを貼る工作費のため製造費が高くなるという問
題点があった。
Therefore, in the conventional solid-state image pickup device having a glass plate on the surface of the device, there is a problem that the manufacturing cost is increased due to the material cost of the glass and the work cost for sticking the glass.

【0004】本発明の目的は、樹脂パッケージ表面にガ
ラス板を設けることなく光入射面に付着する塵埃の影響
を抑制するようにした固体撮像素子を提供することにあ
る。
An object of the present invention is to provide a solid-state image pickup device which suppresses the influence of dust adhering to the light incident surface without providing a glass plate on the surface of the resin package.

【0005】[0005]

【課題を解決するための手段】本発明による固体撮像素
子は、光透過性の樹脂で光電変換素子をパッケージ封止
してパッケージの光入射表面は樹脂面のままとし、光電
変換素子の受光面と樹脂パッケージ入射面との距離を次
式のように定めるものである。 15p≦{e/( l−e)}g
In the solid-state image pickup device according to the present invention, the photoelectric conversion element is package-sealed with a light-transmitting resin, and the light-incident surface of the package remains a resin surface. The distance between the resin package and the incident surface of the resin package is determined by the following equation. 15p≤ {e / (l-e)} g

【0006】ここで、gは、光電変換素子の画素並び方
向における焦点検出光学系の射出瞳寸法、lは、射出瞳
と上記受光面との空気換算光路長、pは、光電変換素子
の画素ピッチ、eは、パッケージ入射表面と光電変換素
子の受光面との空気換算光路長である。
Here, g is the exit pupil size of the focus detection optical system in the pixel arrangement direction of the photoelectric conversion element, l is the air-converted optical path length between the exit pupil and the light receiving surface, and p is the pixel of the photoelectric conversion element. The pitch, e is the air-equivalent optical path length between the package incident surface and the light receiving surface of the photoelectric conversion element.

【0007】[0007]

【作用】パッケージの光入射面に塵埃が付着しても、そ
の像は光電変換素子の受光面上でボケるから、焦点検出
精度に影響を与えない。
Even if dust adheres to the light incident surface of the package, the image is blurred on the light receiving surface of the photoelectric conversion element, so that it does not affect the focus detection accuracy.

【0008】[0008]

【実施例】図1は、本発明をいわゆる位相差検出方式の
焦点検出装置に適用した場合の一例を示している。ここ
で、焦点検出装置AFDは、コンデンサレンズ11と、
分割瞳マスク12と、セパレータレンズ13a,13b
とから成る周知の焦点検出光学系を有し、この光学系に
より固体撮像素子14内に樹脂で封止された光電変換素
子15a,15b(例えばCCDラインセンサ)の受光
面上に一対の被写体2次像が形成される。そして、予定
した焦点検出面10と実際の結像面との変位を光電変換
素子15a,15b上の一対の像のずれ量から求める。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an example in which the present invention is applied to a so-called phase difference detection type focus detection apparatus. Here, the focus detection device AFD includes a condenser lens 11,
Split pupil mask 12 and separator lenses 13a and 13b
Has a well-known focus detection optical system, and a pair of the subject 2 is formed on the light receiving surface of the photoelectric conversion elements 15a and 15b (for example, CCD line sensor) sealed with resin in the solid-state image sensor 14 by this optical system. The next image is formed. Then, the planned displacement between the focus detection surface 10 and the actual image formation surface is obtained from the amount of deviation between the pair of images on the photoelectric conversion elements 15a and 15b.

【0009】本発明に係る固体撮像素子においては、光
電変換素子15a,15bを封止する樹脂パッケージの
光入射面は樹脂面とされている。
In the solid-state image pickup device according to the present invention, the light incident surface of the resin package for sealing the photoelectric conversion elements 15a and 15b is a resin surface.

【0010】次に、図1と共通の記号を配して模式的に
表した図2を用いて検出原理を説明する。
Next, the principle of detection will be described with reference to FIG. 2 schematically showing the symbols common to those in FIG.

【0011】焦点検出装置ADFは対物レンズ21の後
方でCCDラインセンサ15a,15bの受光面が焦点
検出面10と共役になるように配置される。対物レンズ
21を通った光は次にコンデンサレンズ11を通り、さ
らにその中の分割瞳マスク12にあいた二つの開口を透
過した部分が各々セパレータレンズ13aまたは13b
を介して固体撮像素子14のラインセンサ15a又は1
5bに達する。
The focus detection device ADF is arranged behind the objective lens 21 so that the light receiving surfaces of the CCD line sensors 15a and 15b are conjugate with the focus detection surface 10. The light that has passed through the objective lens 21 then passes through the condenser lens 11, and the portions that have passed through the two openings in the split pupil mask 12 therein are the separator lenses 13a or 13b, respectively.
Via the line sensor 15a or 1 of the solid-state image sensor 14
Reach 5b.

【0012】対物レンズ21による像が正しく焦点検出
面10に結んでいる場合は、すなわち合焦している場合
はラインセンサ15aと15bの受光面上にも2次像が
正しく結像する。このとき、ラインセンサ15aと15
b上の一対の2次像の間隔は所定の値となる。
When the image formed by the objective lens 21 is correctly formed on the focus detection surface 10, that is, when the image is in focus, the secondary image is correctly formed on the light receiving surfaces of the line sensors 15a and 15b. At this time, the line sensors 15a and 15
The interval between the pair of secondary images on b is a predetermined value.

【0013】一方、対物レンズ21による焦点検出面1
0上の像がぼやけている場合は2次像もぼけるととも
に、ラインセンサ15aと15b上の一対の2次像の間
隔も変化する。すなわち、図3(a)〜(c)はライン
センサ15a,15bからそれぞれ得られる光電変換信
号をA,Bで表しており、合焦時は(a)に示すよう
に、A,Bの信号波形はほぼ一致し、前ピン時および後
ピン時には信号A,Bの波形の間隔が同図上において狭
くなったり広くなったりする方向にずれる。したがっ
て、このようなラインセンサ15a,15bからの一対
の光電変換信号をマイクロコンピュータに取り込んで演
算することにより2次像間隔を求め、焦点ずれ量を検出
することができる。
On the other hand, the focus detection surface 1 by the objective lens 21
When the image on 0 is blurred, the secondary image is blurred, and the interval between the pair of secondary images on the line sensors 15a and 15b also changes. That is, in FIGS. 3A to 3C, photoelectric conversion signals obtained from the line sensors 15a and 15b are represented by A and B, respectively, and when focusing, as shown in FIG. The waveforms are almost the same, and the intervals between the waveforms of the signals A and B are deviated in the direction of narrowing or widening in the figure at the time of front pinning and rear pinning. Therefore, the pair of photoelectric conversion signals from the line sensors 15a and 15b can be fetched into the microcomputer and calculated to obtain the secondary image interval and detect the defocus amount.

【0014】ここで固体撮像素子14の光入射面に小さ
な埃が付着してラインセンサ15aに注ぐ光束が遮られ
た場合を考える。埃の位置がラインセンサ15aの受光
面に近いと、すなわち固体撮像素子14の光入射面とラ
インセンサ受光面との距離が小さいとその影響は大きく
図4(a)〜(c)のような出力となり、2次像間隔を
正しく求めるのは困難となる。しかし、もし埃の位置が
遠ければ埃の影はぼけるのでその影響は小さくなる。こ
の間の事情を図5を用いて説明する。
Here, consider the case where a small dust adheres to the light incident surface of the solid-state image pickup device 14 and the light flux which is poured into the line sensor 15a is blocked. When the dust position is close to the light receiving surface of the line sensor 15a, that is, when the distance between the light incident surface of the solid-state image sensor 14 and the light receiving surface of the line sensor is small, the influence is large, as shown in FIGS. It becomes an output, and it becomes difficult to accurately obtain the secondary image interval. However, if the dust position is far away, the shadow of the dust will be blurred and its effect will be small. The situation during this period will be described with reference to FIG.

【0015】同図において、22は分割瞳マスク12の
セパレータレンズ13aによる虚像であり、ラインセン
サ15aは周囲のパッケージを取り除き光学的に等価な
位置に表してある。今、微小な埃がラインセンサ15a
の受光面から距離eだけ離れた所にあると、分割瞳の虚
像22の開口幅(ラインセンサ15aの画素並び方向に
おける開口幅)をg、虚像22と光電変換素子15aの
受光面との距離をl、埃のぼけた影の大きさをmとする
と、以下の関係がある。 m={e/( l−e)}g …(1)
In the figure, reference numeral 22 denotes a virtual image by the separator lens 13a of the split pupil mask 12, and the line sensor 15a is shown at an optically equivalent position by removing the surrounding package. Now, minute dust is generated by the line sensor 15a.
If the distance e is away from the light receiving surface of, the opening width of the virtual image 22 of the split pupil (the opening width in the pixel arrangement direction of the line sensor 15a) is g, and the distance between the virtual image 22 and the light receiving surface of the photoelectric conversion element 15a. Where l is and the size of the dusty shadow is m, there is the following relationship. m = {e / (l-e)} g (1)

【0016】この(1)式からわかるとおり、eが大き
いほど埃の影は大きくぼけ、その分薄くなるので、ライ
ンセンサ上の像に及ぼす影響は小さくなる。(1)式の
mをラインセンサ画素ピッチpの15〜20倍以上にな
るように定めると、樹脂によく付着するいわゆるケバゴ
ミ程度の大きさの物の影響はほとんど受けない。
As can be seen from the equation (1), the larger e is, the more blurred the shadow of dust becomes and the thinner it becomes, so that the influence on the image on the line sensor is reduced. If m in the equation (1) is set to be 15 to 20 times or more the line sensor pixel pitch p, it is almost unaffected by a substance that adheres well to the resin and has a size of so-called fluff.

【0017】ここで、ラインセンサの画素のピッチは、
ラインセンサの一画素に注ぐ光量、分解能、装置の大き
さなどの兼ね合いで決まるが、例えばp=20μm,g
=1.5mm,l=6mmとすると、m>20pにするに
は、e>1.3mmにすればよく、同様にm>15pにす
るには、e>1mmにすればよい。なお、パッケージの樹
脂の屈折率をC、ラインセンサの受光面から固体撮像素
子の表面までの距離をd、その空気換算路長をeとする
と、 d=Ce …(2) と表せるから、e>1.3mmにするときは、d>1.3C
mmとすればよい。
Here, the pixel pitch of the line sensor is
It is determined by the balance of the amount of light poured into one pixel of the line sensor, the resolution, the size of the device, etc., but for example p = 20 μm, g
= 1.5 mm and l = 6 mm, e> 1.3 mm is required for m> 20p, and e> 1 mm is also required for m> 15p. If the refractive index of the resin of the package is C, the distance from the light receiving surface of the line sensor to the surface of the solid-state image sensor is d, and the air-equivalent path length is e, then d = Ce (2) > 1.3mm, d> 1.3C
It should be mm.

【0018】〈変形例〉図6は本発明に係る固体撮像素
子24の変形実施例であり、固体撮像素子24は、CC
Dラインセンサ25a、25bを透明樹脂材で封止する
とともに、素子表面にセパレータレンズ23a,23b
を樹脂材と一体に形成したものである。
<Modification> FIG. 6 shows a modification of the solid-state image pickup device 24 according to the present invention.
The D line sensors 25a and 25b are sealed with a transparent resin material, and the separator lenses 23a and 23b are provided on the element surface.
Is integrally formed with a resin material.

【0019】この実施例によれば、セパレータレンズと
固体撮像素子24との位置調整作業が不要となり、組立
性が格段に改善される。
According to this embodiment, the work of adjusting the position of the separator lens and the solid-state image pickup device 24 is unnecessary, and the assembling property is remarkably improved.

【0020】なお以上述べた実施例は位相差検出方式で
あったが、コントラス法等他の焦点検出方式であって
も、固体撮像素子により検出した像信号に基づいて焦点
検出を行う装置であれば、いずれにも適用できる。
Although the embodiment described above is the phase difference detection method, any other focus detection method such as the contrast method may be used as long as it is a device for performing focus detection based on the image signal detected by the solid-state image sensor. It can be applied to both.

【0021】[0021]

【発明の効果】本発明によれば、透明な樹脂でパッケー
ジ封止されているCCDラインセンサなどの光電変換素
子受光面とパッケージ光入射表面との距離を、パッケー
ジ表面に付着した塵埃の影が固体撮像素子受光面上で焦
点検出に影響がないほどにぼけるような長さに設定した
ので、パッケージ表面に静電気による塵埃の付着防止用
ガラス板を設ける必要がなく、焦点検出装置をコストダ
ウンできる。
According to the present invention, the distance between the light receiving surface of a photoelectric conversion element such as a CCD line sensor, which is packaged in a transparent resin, and the light incident surface of the package is determined by the shadow of dust adhering to the package surface. The length of the solid-state image sensor is set so that it will not be affected by focus detection on the light-receiving surface, so there is no need to provide a glass plate to prevent dust from adhering to the package surface, and the cost of the focus detection device can be reduced. .

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る固体撮像素子を用いた焦点検出装
置の一実施例の構成を示す図。
FIG. 1 is a diagram showing a configuration of an embodiment of a focus detection apparatus using a solid-state image sensor according to the present invention.

【図2】実施例の焦点検出原理を説明する模式図。FIG. 2 is a schematic diagram illustrating the focus detection principle of the embodiment.

【図3】実施例の固体撮像素子の出力例を表す図。FIG. 3 is a diagram illustrating an output example of the solid-state image sensor according to the embodiment.

【図4】図3の出力例で塵埃の影響を説明する図。FIG. 4 is a diagram illustrating the influence of dust in the output example of FIG.

【図5】塵埃の位置による出力への影響を説明する図。FIG. 5 is a diagram for explaining the influence of dust position on output.

【図6】変形例を示す図。FIG. 6 is a diagram showing a modified example.

【符号の説明】[Explanation of symbols]

10:焦点検出面 11:コンデンサーレンズ 12:分割瞳マスク 13a,13b,23a,23b:セパレータレンズ 14,24:固体撮像素子 15a,15b,25a,25b:ラインセンサ 10: Focus detection surface 11: Condenser lens 12: Divided pupil mask 13a, 13b, 23a, 23b: Separator lens 14, 24: Solid-state image sensor 15a, 15b, 25a, 25b: Line sensor

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H04N 5/232 A ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location H04N 5/232 A

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 焦点検出光学系により被写体像が受光面
上で結像する光電変換素子を有し、結像した光像を電気
信号に変換して出力し、該出力を焦点検出に利用する固
体撮像素子において、 光透過性の樹脂で前記光電変換素子を封止したパッケー
ジの光入射表面は樹脂面のままとし、 前記光電変換素子の画素並び方向における前記焦点検出
光学系の射出瞳寸法をg,前記射出瞳と前記受光面との
空気換算光路長をl、前記光電変換素子の画素ピッチを
p、前記パッケージ入射表面と前記受光面との空気換算
光路長をeとしたとき、15p≦{e/( l−e)}
gが満足するように前記光電変換素子の受光面と前記樹
脂パッケージ入射面との距離d=Ce(但し、Cはパッ
ケージの樹脂の屈折率)を決定することを特徴とする固
体撮像素子。
1. A photoelectric conversion element for forming a subject image on a light receiving surface by a focus detection optical system, converting the formed optical image into an electric signal for output, and utilizing the output for focus detection. In the solid-state imaging device, the light incident surface of the package in which the photoelectric conversion element is sealed with a light-transmissive resin is a resin surface, and the exit pupil size of the focus detection optical system in the pixel arrangement direction of the photoelectric conversion element is set to 15 p ≦ 15, where g is the air-equivalent optical path length between the exit pupil and the light-receiving surface, p is the pixel pitch of the photoelectric conversion element, and e is the air-equivalent optical path length between the package entrance surface and the light-receiving surface. {E / (l-e)}
A solid-state imaging device, characterized in that a distance d = Ce (where C is a refractive index of a resin of the package) between the light receiving surface of the photoelectric conversion element and the resin package incident surface is determined so that g is satisfied.
JP7142152A 1995-06-08 1995-06-08 Solid-state imaging device Expired - Lifetime JP2809133B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7142152A JP2809133B2 (en) 1995-06-08 1995-06-08 Solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7142152A JP2809133B2 (en) 1995-06-08 1995-06-08 Solid-state imaging device

Publications (2)

Publication Number Publication Date
JPH07322153A true JPH07322153A (en) 1995-12-08
JP2809133B2 JP2809133B2 (en) 1998-10-08

Family

ID=15308578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7142152A Expired - Lifetime JP2809133B2 (en) 1995-06-08 1995-06-08 Solid-state imaging device

Country Status (1)

Country Link
JP (1) JP2809133B2 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
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