JPH07283119A - Aligner and exposure method - Google Patents
Aligner and exposure methodInfo
- Publication number
- JPH07283119A JPH07283119A JP6075624A JP7562494A JPH07283119A JP H07283119 A JPH07283119 A JP H07283119A JP 6075624 A JP6075624 A JP 6075624A JP 7562494 A JP7562494 A JP 7562494A JP H07283119 A JPH07283119 A JP H07283119A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- mask
- projection mask
- polarization
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光学式の露光装置なら
びにその方法に関する。特に、半導体素子の製造等に用
いる光学式の露光装置ならびにその方法に係わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical exposure apparatus and method thereof. In particular, the present invention relates to an optical exposure apparatus used for manufacturing semiconductor elements and the like, and a method thereof.
【０００２】[0002]
【従来の技術】従来の露光装置は光源と遮光パタ−ンあ
るいは半透明膜パタ−ンを内在した投影マスクおよび光
学レンズから構成される。また従来の露光方法は文献(T
erasawa et al,Proc. of 1991 Intern. MicroProcess C
onference pp.3-9）のように投影マスク上に形成された
遮光パタ−ンあるいは半透明膜パタ−ンを上記光源およ
びレンズを用いてウェ−ハ上に投影する方法であった。2. Description of the Related Art A conventional exposure apparatus comprises a light source, a projection mask having a light-shielding pattern or a semitransparent film pattern therein, and an optical lens. The conventional exposure method is described in the literature (T
erasawa et al, Proc. of 1991 Intern. MicroProcess C
onference pp.3-9), a light-shielding pattern or a semi-transparent film pattern formed on a projection mask is projected onto a wafer by using the above light source and lens.
【０００３】[0003]
【発明が解決しようとする課題】従来の技術における露
光装置は、投影マスクの遮光パタ−ンをウェ−ハ上に投
影することで露光を行っていた。この投影マスクの遮光
パタ−ンは、透過ガラスの上に形成したクロム等の金属
膜あるいは酸化膜等の薄膜による半透明膜を加工して得
られたものである。この様な形態の露光装置あるいは露
光方法では、一枚のマスクに含まれた遮光パタ−ンある
いは位相シフトパタ−ン情報の全てが一回の露光でウェ
−ハに投影される。従って、一枚のマスクには一つのパ
タ−ン層情報しか含まれない。このため、投影マスクと
各パタ−ン層ごとにマスクを一対一で用意しなければな
らない。この際、一つのデバイスを作製するにあたり各
パタ−ン層に対応した複数のマスクを用いる場合には、
それぞれマスクのパタ−ンの重ねあわせを正確に行うた
めにマスクの位置合わせが必要となる。半導体集積回路
素子等の微細なパタ−ンの露光では、高精度の位置合わ
せが必要となる。従来はこの位置合わせのためにマスク
とウェ−ハ上にそれぞれ合わせマ−クを設けてこれらの
マ−ク間の位置合わせを露光前に調整していたが、その
調整は困難で現状の最高精度は０．１μｍ程度ある。ま
た、従来技術では一度作製した投影マスク内のパタ−ン
変更はできないので、上記金属膜等の加工をしなおさな
ければならない等の問題が有った。In the conventional exposure apparatus, the exposure is performed by projecting the light-shielding pattern of the projection mask onto the wafer. The light-shielding pattern of this projection mask is obtained by processing a semi-transparent film made of a metal film such as chromium or a thin film such as an oxide film formed on transparent glass. In the exposure apparatus or exposure method having such a configuration, all of the light-shielding pattern or phase shift pattern information contained in one mask is projected onto the wafer by one exposure. Therefore, one mask contains only one pattern layer information. For this reason, the projection mask and the mask must be prepared one by one for each pattern layer. At this time, when using a plurality of masks corresponding to each pattern layer in manufacturing one device,
It is necessary to align the masks in order to accurately overlay the mask patterns. Exposure of a fine pattern such as a semiconductor integrated circuit device requires highly accurate alignment. In the past, alignment marks were provided on the mask and wafer for this alignment, and the alignment between these marks was adjusted before exposure. The accuracy is about 0.1 μm. Further, in the conventional technique, it is impossible to change the pattern in the projection mask once manufactured, so that there is a problem that the metal film or the like has to be processed again.
【０００４】本発明の目的は、一枚のマスクで複数種の
パタ−ン種を同一ウェ−ハ上に位置精度良く形成できる
露光装置及び露光方法を提供することにある。また、マ
スク内に用意されるパタ−ン形状の変更の容易な露光装
置および露光方法を提供することに有る。An object of the present invention is to provide an exposure apparatus and an exposure method capable of forming a plurality of pattern types on the same wafer with a high positional accuracy by using one mask. Another object of the present invention is to provide an exposure apparatus and an exposure method in which the pattern shape prepared in the mask can be easily changed.
【０００５】[0005]
【課題を解決するための手段】上記目的は、光源から照
射される光の偏光を偏光フィルタ（偏光子、検光子）の
回転あるいは磁気旋光効果（ファラデ−効果）により制
御し、また旋光性材料により投影マスクを構成すること
により解決される。パタ−ン変更の容易性はマスク材料
として強誘電体材料を用いることで解決される。The above object is to control the polarization of light emitted from a light source by rotating a polarizing filter (polarizer, analyzer) or by a magnetic rotatory effect (Farade effect). It is solved by constructing a projection mask by. The ease of pattern change is solved by using a ferroelectric material as a mask material.
【０００６】[0006]
【作用】本発明では、２つの偏光フィルタを用意し、あ
る特定の偏光方向を持った光だけを透過するよう制御す
る。光源から発生する光は通常円偏光を有している。最
初の偏光フィルタ（偏光子）を通過すると直線偏光の光
となる。この光を投影マスクに照射する。投影マスクは
少なくとも二つ以上の旋光特性の異なる領域を設けてあ
る。水晶や強誘電体等の旋光性のある材料では、線偏光
の光が透過するとき光はその材料内で偏光が回転して出
てくる。その偏光角は、材料の種類及びその厚さによっ
て異なる。従って、旋光特性の異なる領域を上記線偏光
の光が透過するとこれらの領域間では線偏光の回転方向
や回転角が異なったものとなる。すなわち、投影マスク
を透過した光は、パタ−ン領域ごとに異なる偏光角とな
っている。次に偏光フィルタ（検光子）によりこれらの
透過光の内所望のパタ−ンに対応した領域の偏光に回転
を合わせる。偏光フィルタは、特定の偏光成分のみを透
過させるものである。このため、線偏光がこのフィルタ
を透過するためにはこのフィルタと同じ旋光性の偏光で
なければならない。検光子の回転により、旋光角の一致
した領域のみが透過しそれ以外の領域はこの検光子に吸
収されてしまう。この結果、検光子で選択された偏光成
分を有した領域パタ−ンのみ光が透過しその他のパタ−
ン領域の光は遮られてしまう。同様に、投影パタ−ンの
選択は、偏光フィルタの回転の他に磁場による偏光回転
（ファラデ−効果）を応用しても良い。この場合、偏光
の回転角は、磁場に比例するので、所望のパタ−ンに対
応した領域が透過するように、磁場の強さを調節すれば
良い。また、本発明において、当然従来の遮光型パタ−
ンを同一マスクに併用しても良い。この場合、遮光パタ
−ン領域は偏光に係わらず遮光領域となる。In the present invention, two polarization filters are prepared and controlled so that only light having a specific polarization direction is transmitted. The light emitted from the light source usually has circular polarization. When it passes through the first polarizing filter (polarizer), it becomes linearly polarized light. The projection mask is irradiated with this light. The projection mask has at least two regions having different optical rotation characteristics. In a material having optical rotatory power such as quartz or a ferroelectric substance, when linearly polarized light is transmitted, the polarized light is rotated out in the material. The polarization angle depends on the type of material and its thickness. Therefore, when the linearly polarized light is transmitted through the regions having different optical rotation characteristics, the rotation direction and the rotation angle of the linearly polarized light are different between these regions. That is, the light transmitted through the projection mask has a different polarization angle for each pattern area. Then, a polarization filter (analyzer) adjusts the rotation of the transmitted light to the polarized light in the region corresponding to the desired pattern. The polarization filter transmits only a specific polarization component. Therefore, in order for the linearly polarized light to pass through this filter, it must have the same optical rotation as that of this filter. Due to the rotation of the analyzer, only the region where the angle of rotation coincides is transmitted and the other regions are absorbed by this analyzer. As a result, only the area pattern having the polarization component selected by the analyzer transmits the light and the other patterns are transmitted.
The light in the light field is blocked. Similarly, for the selection of the projection pattern, polarization rotation (Faraday effect) by a magnetic field may be applied in addition to the rotation of the polarization filter. In this case, since the rotation angle of the polarized light is proportional to the magnetic field, the strength of the magnetic field may be adjusted so that the region corresponding to the desired pattern will be transmitted. Further, in the present invention, of course, the conventional light-shielding pattern
The same mask may be used together. In this case, the light-shielding pattern area is a light-shielding area regardless of polarization.
【０００７】本発明の投影マスクとしては従来の透過マ
スク上に旋光性材料をパタ−ニングするものを使うか、
あるいはマスク材として強誘電体結晶を用いると旋光特
性の異なる双晶構造を容易に形成できる。強誘電体は一
般に旋光性を持つ材料である。特に、室温で双晶構造を
とるものは、各双晶領域で旋光角がお互いに反対方向に
なるために上記投影マスク構成材料として優れている。
また、強誘電体結晶を用いる場合のパタ−ン形成すなわ
ち双晶領域形成については直接電子ビ−ムの照射により
実現することができる。これはある双晶構造の片方の結
晶構造になっている領域に電子ビ−ムを照射するともう
片方の双晶構造に変化する現象を利用したものである。
この方法により複雑なエッチング等のプロセスを用いず
にパタ−ン変更時の再加工が容易にできる。As the projection mask of the present invention, a conventional transparent mask in which an optically active material is patterned is used, or
Alternatively, when a ferroelectric crystal is used as a mask material, twin crystal structures having different optical rotation characteristics can be easily formed. Ferroelectrics are generally materials with optical activity. In particular, those having a twin structure at room temperature are excellent as the above-mentioned projection mask constituent material because the optical rotation angles in the twin regions are opposite to each other.
Further, the pattern formation in the case of using the ferroelectric crystal, that is, the formation of the twinned region can be realized by directly irradiating the electron beam. This utilizes a phenomenon in which, when an electron beam is applied to a region of one twin crystal structure, the twin structure is changed to the other twin structure.
This method facilitates reworking when changing the pattern without using a complicated process such as etching.
【０００８】[0008]
【実施例】以下、本発明の露光装置及び露光方法の実施
例について述べる。Embodiments of the exposure apparatus and the exposure method of the present invention will be described below.
【０００９】［実施例１］まず本装置の実施例を図１、
３を用いて説明する。光源である水銀ランプ１より発せ
られた紫外光２はレンズ３により平行光もしくは縮小レ
ンズ９の入射瞳への集光光となる。この光は円偏光光線
である。次に偏光フィルタ４によりフィルタ面に所定方
向の偏光のみを透過させる。この光をマスク６上に照射
する。マスク内には入射光に対して偏光角が０度回転す
る領域（Ａパタ−ン）１４と左に５度回転する領域（Ｂ
パタ−ン）１５が含まれている。従って、このマスクを
透過した光は入射光に対してそれぞれ０度回転したＡパ
タ−ン１４と左に５度回転したＢパタ−ン１５の２つの
偏光成分から構成される。これらの光を偏光フィルタ７
に照射する。まず偏光フィルタ回転機構８により上部に
設けた偏光フィルタと同じ角度に設定する。すると透過
光としてはＡパタ−ンの光のみとなり、ウェ−ハ１０上
にはレンズ９により縮小されたＡパタ−ン１４が投影さ
れる。次に、回転機構８により偏光フィルタ７の角度を
左に５度回転させる。すると今度はＢパタ−ン１５のみ
が透過してウェ−ハ上にはレンズ９により縮小されたＢ
パタ−ン１５が投影される。なお、パタ−ン選択は、偏
光フィルタ回転機構５によって行っても良い。[Embodiment 1] First, an embodiment of the present apparatus is shown in FIG.
3 will be used for the explanation. The ultraviolet light 2 emitted from the mercury lamp 1 which is the light source is collimated by the lens 3 or condensed on the entrance pupil of the reduction lens 9. This light is a circularly polarized light beam. Next, only the polarized light in a predetermined direction is transmitted through the filter surface by the polarization filter 4. The mask 6 is irradiated with this light. In the mask, a region (A pattern) 14 where the polarization angle is rotated by 0 ° and a region (B region) where it is rotated 5 ° to the left with respect to the incident light.
Pattern 15 is included. Therefore, the light transmitted through this mask is composed of two polarization components, an A pattern 14 rotated 0 degrees and a B pattern 15 rotated 5 degrees to the left with respect to the incident light. Polarizing filter 7 for these lights
To irradiate. First, the polarization filter rotating mechanism 8 sets the same angle as that of the polarization filter provided above. Then, only the light of the A pattern is transmitted, and the A pattern 14 reduced by the lens 9 is projected on the wafer 10. Next, the rotation mechanism 8 rotates the angle of the polarization filter 7 to the left by 5 degrees. Then, only the B pattern 15 is transmitted and the lens 9 reduces the size of B on the wafer.
The pattern 15 is projected. The pattern selection may be performed by the polarization filter rotating mechanism 5.
【００１０】［実施例２］ここでは、本発明をイオン打
ち込み用パタ−ン形成に応用した例について図４を用い
て述べる。上記Ａパタ−ンとして図３の高濃度打ち込み
用パタ−ン１４、Ｂパタ−ンとして低濃度打ち込み用パ
タ−ン１５を一枚のマスク１３上に用意する。まず、シ
リコン基板にポジ型高分子レジスト１７を１μｍ塗布す
る。この基板に対し、偏光フィルタ回転機構８により上
部に設けた偏光フィルタと同じ角度に設定する。すると
透過光としてはＡパタ−ン１４の光のみとなり、ウェ−
ハ上にはレンズ９により縮小されたＡパタ−ン１４が図
４（ａ）の透過光１６ように投影される。次に、回転機
構８により偏光フィルタ７の角度を左に５度回転させ
る。すると今度はＢパタ−ン１５のみが透過してウェ−
ハ上にはレンズ９により縮小されたＢパタ−ン１５が図
４（ｂ）の透過光１６ように投影される。この際２つの
露光時間を調節して２回目の露光時間を１回目の露光時
間の所定量だけに減少させる。この基板を現像すると、
Ａパタ−ンに対応する領域のレジスト膜厚が０になった
とき、Ｂパタ−ンの領域のレジスト膜厚は例えば０．５
μｍとなる。次に図４（ｃ）に示すようにイオン打ち込
みする。加速電圧は５０ｋＶである。すると、レジスト
膜厚１μｍの領域では、ホウ素イオン１９がレジスト膜
中１７で阻止されてしまうためにウェ−ハ１８には到達
できない。Ｂパタ−ン領域ではレジスト膜厚が０．５μ
ｍあるのでレジストを通過したホウ素イオン１９がウェ
−ハに打ち込まれる。この領域２１の打ち込み深さは５
０ｎｍで打ち込み濃度は５×１０18個／ｍ3である。こ
れに対し、Ａパタ−ン領域ではレジスト膜厚が０である
ためにこの領域２０の打ち込み深さ１５０ｎｍで打ち込
み濃度は５×１０24個／ｍ3であった。図４（ｄ）のＡ
パタ−ン２０とＢパタ−ン２１の位置合わせは上記露光
法により同一マスクを動かさずに用いているので中心位
置の位置合わせ誤差が生じない特徴がある。この工程で
は、さらにＢパタ−ン１６の露光時間をＡパタ−ンの露
光とは独立に調節できるのでレジスト膜厚を任意に制御
して打ち込み濃度を所望の値に制御できる特徴がある。[Embodiment 2] An example in which the present invention is applied to the formation of a pattern for ion implantation will be described with reference to FIG. A high-concentration implantation pattern 14 shown in FIG. 3 as the A pattern and a low-concentration implantation pattern 15 as the B pattern are prepared on one mask 13. First, a positive type polymer resist 17 is applied to a silicon substrate in a thickness of 1 μm. With respect to this substrate, the same angle as that of the polarizing filter provided above is set by the polarizing filter rotating mechanism 8. Then, only the light of the A pattern 14 is transmitted as light,
The A pattern 14 reduced by the lens 9 is projected as a transmitted light 16 in FIG. Next, the rotation mechanism 8 rotates the angle of the polarization filter 7 to the left by 5 degrees. Then, only B pattern 15 is transmitted and the way
The B pattern 15 reduced by the lens 9 is projected as the transmitted light 16 in FIG. At this time, the two exposure times are adjusted to reduce the second exposure time to a predetermined amount of the first exposure time. When this substrate is developed,
When the resist film thickness in the region corresponding to the A pattern becomes 0, the resist film thickness in the B pattern region becomes, for example, 0.5.
μm. Next, as shown in FIG. 4C, ion implantation is performed. The acceleration voltage is 50 kV. Then, in the region where the resist film thickness is 1 μm, the boron ions 19 are blocked by the resist film 17 and cannot reach the wafer 18. In the B pattern area, the resist film thickness is 0.5 μm.
Therefore, the boron ions 19 that have passed through the resist are implanted into the wafer. The implantation depth of this region 21 is 5
The implantation density at 0 nm is 5 × 10 18 particles / m 3 . On the other hand, since the resist film thickness is 0 in the A pattern region, the implantation concentration was 5 × 10 24 / m 3 at the implantation depth of 150 nm in this region 20. A of FIG. 4 (d)
The pattern 20 and the B pattern 21 are aligned by using the same mask without moving the same mask by the above-mentioned exposure method. In this step, since the exposure time of the B pattern 16 can be adjusted independently of the exposure of the A pattern, the resist film thickness can be arbitrarily controlled to control the implantation density to a desired value.
【００１１】［実施例３］ここでは、同様の露光法を用
いて微細ゲ−ト電極の形成法の実施例について図２、５
を用いて述べる。上記Ａパタ−ンとして図３のゲ−ト上
面用パタ−ン１４、Ｂパタ−ンとしてゲ−ト底面用パタ
−ン１５を一枚のマスク１３上に用意する。石英をマス
ク材とする。まず、シリコン基板にポジ型高分子レジス
ト１７を１μｍ塗布する。この基板に対し、図２の磁気
コイル２３に電流を０として旋光角を０にする。すると
透過光としてはＡパタ−ンの光のみとなり、ウェ−ハ上
にはレンズ９により縮小されたＡパタ−ン１４が透過光
１６のように投影される（図５（ａ））。次に、磁気コ
イル２３に電流を流し光路に垂直な磁場２４を発生させ
偏光を左に５度回転させる。石英中の旋光を５度回転さ
せるためには３ｋＯｅの磁場を印加する。すると今度は
Ｂパタ−ン１５のみが透過してウェ−ハ上にはレンズ９
により縮小されたＢパタ−ン１５が透過光１６のように
投影される（図５（ｂ））。この際２つの露光時間を調
節して２回目の露光時間を１回目の露光時間より所定の
時間だけ長くする。この基板を現像すると、Ｂパタ−ン
に対応する領域のレジスト膜厚が０になったとき、Ａパ
タ−ンの領域のレジスト膜厚は例えば０．５μｍとなる
（図５（ｃ））。解像したＢパタ−ンのレジスト幅の寸
法は０．１μｍであった。次にこのウェ−ハにタングス
テンを蒸着法により堆積させる。タングステン最大膜厚
が０．８μｍとなるように処理すると、ウェ−ハ面に接
触するＢパタ−ンでは膜厚０．８μｍのタングステンが
堆積し、Ａパタ−ン領域での膜厚は０．３μｍとなった
（図５（ｄ））。従来は２回の露光で２枚のマスクを用
いて加工を行っていたためにＡ，Ｂパタ−ンの位置合わ
せ精度は最高でも０．１μｍで場合によっては、Ａ，Ｂ
パタ−ンの位置が重ならないなど不良があった。これに
対し本例でもマスク切り替え時の移動がないために位置
合わせ誤差はいつでも０であった。このプロセスによっ
てゲ−ト長の微細なかつ上面電極との接触抵抗の少ない
良好なゲ−ト加工が可能となった。[Embodiment 3] Here, an embodiment of a method for forming a fine gate electrode by using the same exposure method is shown in FIGS.
Will be described using. A gate upper surface pattern 14 shown in FIG. 3 as the A pattern and a gate bottom surface pattern 15 as the B pattern shown in FIG. 3 are prepared on one mask 13. Quartz is used as the mask material. First, a positive type polymer resist 17 is applied to a silicon substrate in a thickness of 1 μm. With respect to this substrate, the current is set to 0 and the optical rotation angle is set to 0 in the magnetic coil 23 of FIG. Then, only the light of the A pattern is transmitted as the transmitted light, and the A pattern 14 reduced by the lens 9 is projected as the transmitted light 16 on the wafer (FIG. 5A). Next, an electric current is passed through the magnetic coil 23 to generate a magnetic field 24 perpendicular to the optical path to rotate the polarized light 5 degrees to the left. A magnetic field of 3 kOe is applied to rotate the optical rotation in quartz by 5 degrees. Then, only the B pattern 15 is transmitted and the lens 9 is placed on the wafer.
The B pattern 15 reduced by is projected as transmitted light 16 (FIG. 5B). At this time, the two exposure times are adjusted to make the second exposure time longer than the first exposure time by a predetermined time. When this substrate is developed, when the resist film thickness in the region corresponding to the B pattern becomes 0, the resist film thickness in the A pattern region becomes, for example, 0.5 μm (FIG. 5C). The dimension of the resist width of the resolved B pattern was 0.1 μm. Next, tungsten is deposited on this wafer by a vapor deposition method. When processing is performed so that the maximum film thickness of tungsten is 0.8 μm, tungsten having a film thickness of 0.8 μm is deposited in the B pattern in contact with the wafer surface, and the film thickness in the A pattern region is 0. It became 3 μm (FIG. 5 (d)). Conventionally, since two exposures were used to process two masks, the alignment accuracy of the A and B patterns was at most 0.1 μm, and in some cases A and B were used.
There were defects such as the positions of the patterns not overlapping. On the other hand, in this example as well, the alignment error was always 0 because there was no movement during mask switching. This process enables fine gate processing with a fine gate length and low contact resistance with the upper surface electrode.
【００１２】［実施例４］ここでは、本発明に用いる投
影マスクの構造と作製方法について述べる。[Embodiment 4] Here, the structure and manufacturing method of the projection mask used in the present invention will be described.
【００１３】本発明の投影マスク用の旋光性材料として
は、水晶や強誘電体や旋光性溶液、液晶等がある。ここ
ではこれらのうち最も実用的な水晶と強誘電体材料につ
いて説明する。マスク材料を透過したときの旋光角は材
料の特性と厚さに依存している。先ず、水晶をマスク材
料にしてみる。波長５４６ｎｍに対して、１ｍｍの水晶
中を透過すると旋光角は２５．５４度回転する。そこで
先ず、５ｍｍ厚の水晶板を用意する。次に、旋光角が０
度になるように、ＣＦ4ガスによるドライエッチングを
用いてＡパタ−ンをエッチングする。次に５度の旋光角
となるように、Ｂパタ−ンを同様にエッチングすること
で図３の投影マスク１３が得られる。この様に、マスク
材の厚さを変えれば２種以上のパタ−ンを内在させるこ
とが可能である。The optical rotatory material for the projection mask of the present invention includes quartz, ferroelectrics, optical rotatory solution, liquid crystal and the like. Here, the most practical crystal and ferroelectric materials among them will be described. The optical rotation angle when transmitted through the mask material depends on the material properties and thickness. First, let's use quartz as a mask material. When transmitted through a 1 mm crystal for a wavelength of 546 nm, the optical rotation angle rotates by 25.54 degrees. Therefore, first, a crystal plate having a thickness of 5 mm is prepared. Next, the rotation angle is 0
The A pattern is etched by dry etching using CF 4 gas so that the frequency becomes equal to that of the A pattern. Next, the B pattern is similarly etched so that the optical rotation angle is 5 degrees, whereby the projection mask 13 of FIG. 3 is obtained. In this way, two or more types of patterns can be incorporated by changing the thickness of the mask material.
【００１４】次に、強誘電体マスクについて図６を用い
て説明する。ここでは、マスク材３３、３４としてはＬ
ｉＮｂＯ4の単結晶を用いる。ＬｉＮｂＯ4単結晶は、１
２１０℃に構造相転移温度を持つ強誘電体である。室温
では三方晶系の双晶構造をとり、お互いの旋光角は右旋
回と左旋回の逆方向となるので、容易にフィルタによる
パタ−ン選択ができる。従って、マスク厚さには依存せ
ずにパタ−ン形成ができる。パタ−ン形成は先ず、透過
マスク基板３２上にＬｉＮｂＯ4単結晶３３をのせる。
結晶全体を１２１０℃に上げて、結晶全体をチタン鉄鉱
形構造にする。この工程はマスクの消去に相当する。そ
の後、室温に下げると全体が双晶の片方の構造になる。
そこでウェ−ハ底面を接地して電子ビ−ムを照射すると
その領域はもう片方の双晶構造に転移する。このプロセ
スにより投影マスクパタ−ン３３、３４の作製ができ
た。また、マスクパタ−ンの消去法としては、上記の温
度上昇法の他に、マスク板の一定方向に電場を加えるこ
とにより強誘電体の性質を利用して全てを同じ構造体に
できる。Next, the ferroelectric mask will be described with reference to FIG. Here, L is used as the mask materials 33 and 34.
A single crystal of iNbO 4 is used. 1 LiNbO 4 single crystal
It is a ferroelectric substance having a structural phase transition temperature at 210 ° C. At room temperature, it has a trigonal twin crystal structure, and the optical rotation angles of the two are in the opposite directions of right-handed rotation and left-handed rotation, so that pattern selection by a filter can be easily performed. Therefore, the pattern can be formed without depending on the mask thickness. To form the pattern, first, a LiNbO 4 single crystal 33 is placed on the transparent mask substrate 32.
The entire crystal is raised to 1210 ° C. to make it an ilmenite structure. This step corresponds to erasing the mask. After that, when the temperature is lowered to room temperature, the whole structure becomes a twin structure.
Therefore, when the bottom surface of the wafer is grounded and an electron beam is irradiated, that region is transformed into the twin structure of the other. By this process, the projection mask patterns 33 and 34 could be manufactured. As the mask pattern erasing method, in addition to the above-mentioned temperature increasing method, an electric field may be applied in a certain direction of the mask plate to utilize the properties of the ferroelectric substance to form the same structure.
【００１５】この他、マスク材としてはＬａＮｂＯ4の
単結晶を用いても良い。ＬａＮｂＯ4単結晶は、５００
℃に構造相転移温度を持つ強誘電体でありかつ強弾性体
である。室温では単斜晶系の双晶構造をとり、互いの旋
光角は１０度異なっている。従って、上記と同様にマス
ク厚さには依存せずにパタ−ン形成ができる。パタ−ン
形成は先ず、結晶全体を５００℃に上げて、結晶全体を
正方晶系にする。この工程はマスクの消去に相当する。
その後、室温に下げると全体が双晶の片方の構造にな
る。そこで局所的に力を加えるか、電子ビ−ムを照射す
るとその領域はもう片方の双晶構造に転移する。この時
両双晶構造間の遷移領域は１．５ｎｍ程度であるので、
電子ビ−ム径（１０ｎｍ）と同じ線幅のパタ−ンができ
た。従って、ナノメ−タ加工に充分対応できるマスクが
実現できた。このマスクを用いて露光する際に、パタ−
ン選択を行うには、図１の偏光フィルタ７を１０度回転
させるかあるいは図２の磁場発生コイル２３により旋光
を１０度回転させて行う。また、マスクの消去法として
は、上記の温度上昇法の他に、マスク板の一辺方向に力
を加えることにより強弾性体の性質を利用して全てを同
じ構造体にできる。ＬａＮｂＯ4単結晶では、５ｋｇ／
ｃｍ2の力を加えることでマスクパタ−ン消去ができ
た。In addition, a single crystal of LaNbO 4 may be used as the mask material. LaNbO 4 single crystal is 500
It is a ferroelectric and a ferroelectric with a structural phase transition temperature at ℃. At room temperature, they have a monoclinic twin structure, and their optical rotation angles differ by 10 degrees. Therefore, similar to the above, the pattern can be formed without depending on the mask thickness. For pattern formation, first, the temperature of the whole crystal is raised to 500 ° C. to make the whole crystal tetragonal. This step corresponds to erasing the mask.
After that, when the temperature is lowered to room temperature, the whole structure becomes a twin structure. Then, when a force is locally applied or an electron beam is irradiated, the region is transformed into the other twin crystal structure. At this time, since the transition region between both twin structures is about 1.5 nm,
A pattern having the same line width as the electron beam diameter (10 nm) was formed. Therefore, a mask that can sufficiently deal with nanometer processing can be realized. When exposing using this mask, the pattern
The polarization selection is performed by rotating the polarization filter 7 in FIG. 1 by 10 degrees or rotating the optical rotation by 10 degrees by the magnetic field generating coil 23 in FIG. Further, as the mask erasing method, in addition to the above-mentioned temperature rising method, by applying a force in one side direction of the mask plate, all of them can be made into the same structure by utilizing the property of the strong elastic body. For LaNbO 4 single crystal, 5 kg /
The mask pattern could be erased by applying a force of cm 2 .
【００１６】［実施例５］ここでは、本発明を複合プロ
セス装置に組み込んだ例について図７を用いて述べる。
装置としては、本発明の露光装置がプロセス処理室２６
内あるいは直上に配置される。このプロセス処理室２６
では、高温処理用ヒ−タ２９とガス導入部３１、イオン
照射部２５、真空排気部３０及び高周波発生装置からな
る。光源としてはＡｒＦエキシマレ−ザ３５を用いて露
光を行う。まず、ウェ−ハ１０あるいはチップを処理室
に装着し、ガス導入部３１より酸素、水蒸気ガスを導入
後、高温処理用ヒ−タ２９を用いて処理室温度を上昇さ
せ、ウェ−ハ表面に熱酸化膜を１μｍ形成する。次に、
偏光フィルタ４あるいは７を５度回転させ、投影露光マ
スク中の活性層形成用パタ−ンを選択する。そして、処
理室にガス導入部３１よりＣＣｌ2Ｆ2ガスを導入する。
すると、上記活性層形成用パタ−ン部のみにエキシマレ
−ザ２が照射され、酸化膜がエッチングされる。このエ
ッチングは酸化膜が完全に無くなるまで行う。次に、真
空排気部３０より処理室を真空に排気しイオン照射部２
５からホウ素イオンをウェ−ハ全面に照射する。する
と、酸化膜がある領域はホウ素イオンが酸化膜中で阻止
されてしまうために、上記パタ−ン形成部のみがイオン
打ち込みされる。次に、処理室にガス導入部３１よりＣ
Ｆ4ガスを導入し上部電極２８とウェ−ハ１０間に高周
波２７を発生させ、酸化膜を全部除去する。その後、偏
光フィルタを１０度回転させ、投影露光マスク６中の電
極形成用パタ−ンを選択する。そして、処理室にガス導
入部３１よりＳｉＨ4ガス，ＮＦ3ガス，酸素ガス等を導
入する。すると、上記電極形成用パタ−ン部のみにエキ
シマレ−ザ２が照射され、多結晶シリコンが堆積され
る。この様にして、半導体デバイスが同一処理室で作製
される。この場合も、２回の露光時のパタ−ン位置合わ
せ誤差は０でかつレジストを用いない加工が可能であ
る。[Embodiment 5] Here, an example in which the present invention is incorporated in a composite process apparatus will be described with reference to FIG.
As the apparatus, the exposure apparatus of the present invention is the process processing chamber 26.
It is placed inside or directly above. This process chamber 26
Then, it comprises a high temperature processing heater 29, a gas introduction part 31, an ion irradiation part 25, a vacuum exhaust part 30 and a high frequency generator. Exposure is performed using an ArF excimer laser 35 as a light source. First, the wafer 10 or chip is mounted in the processing chamber, oxygen and water vapor gas are introduced from the gas introduction unit 31, and then the temperature of the processing chamber is raised by using the high temperature processing heater 29 so that the wafer surface is exposed. A thermal oxide film is formed to 1 μm. next,
The polarizing filter 4 or 7 is rotated 5 degrees to select the pattern for forming the active layer in the projection exposure mask. Then, the CCl 2 F 2 gas is introduced into the processing chamber from the gas introduction unit 31.
Then, only the active layer forming pattern portion is irradiated with the excimer laser 2 and the oxide film is etched. This etching is performed until the oxide film is completely removed. Next, the processing chamber is evacuated to a vacuum from the vacuum exhaust unit 30, and the ion irradiation unit 2
The entire surface of the wafer is irradiated with boron ions from step 5. Then, since boron ions are blocked in the region where the oxide film is present, only the pattern forming portion is ion-implanted. Next, C is introduced into the processing chamber from the gas introduction unit 31.
A high frequency 27 is generated between the upper electrode 28 and the wafer 10 by introducing F 4 gas to remove the oxide film entirely. After that, the polarization filter is rotated by 10 degrees to select the electrode forming pattern in the projection exposure mask 6. Then, SiH 4 gas, NF 3 gas, oxygen gas, etc. are introduced into the processing chamber from the gas introduction unit 31. Then, only the electrode forming pattern portion is irradiated with the excimer laser 2 to deposit polycrystalline silicon. In this way, semiconductor devices are manufactured in the same processing chamber. Also in this case, the pattern alignment error at the time of two exposures is zero, and the processing without using the resist is possible.
【００１７】[0017]
【発明の効果】本発明は、一枚の投影マスク内に複数の
パタ−ンが含まれているために層間位置決めの不用な露
光が可能となる。また本方法は、エキシマレ−ザ等のレ
ジスト不用の直接エッチングやデポジションへの適用が
できるので、複合プロセス装置への応用ができる。この
他、本発明に用いる投影マスクはパタ−ン作製、消去お
よび再生が容易であるので安価で効率的なプロセスが可
能である。本実施例では、旋光性物質として固体結晶材
料を用いたが、旋光性液体を透過マスク基板上あるいは
マスク基板中に置いても同様の効果が得られる。また、
本発明の方法では、旋光角を多数設定することで設定し
た分のパタ−ン種を投影マスク内に内在させることが可
能で、パタ−ン間で共通する領域では、従来の遮光パタ
−ンを併用できる。According to the present invention, since a plurality of patterns are included in one projection mask, it is possible to perform exposure without the need for interlayer positioning. Further, since the present method can be applied to direct etching or deposition that does not require a resist such as an excimer laser, it can be applied to a composite process apparatus. In addition, the projection mask used in the present invention is easy to pattern, erase and reproduce, so that an inexpensive and efficient process is possible. In this embodiment, the solid crystal material is used as the optical rotatory substance, but the same effect can be obtained by placing the optical rotatory liquid on or in the transparent mask substrate. Also,
According to the method of the present invention, it is possible to make the set pattern types set in the projection mask by setting a large number of optical rotation angles. In the area common to the patterns, the conventional light-shielding pattern is used. Can be used together.
【図１】本発明の一実施例に係る露光装置の構成を示す
図（その１）。FIG. 1 is a diagram showing the configuration of an exposure apparatus according to an embodiment of the present invention (No. 1).
【図２】本発明の一実施例に係る露光装置の構成を示す
図（その２）。FIG. 2 is a diagram showing the configuration of an exposure apparatus according to an embodiment of the present invention (No. 2).
【図３】本発明の一実施例に係る投影マスクの構成を示
す図。FIG. 3 is a diagram showing a configuration of a projection mask according to an embodiment of the present invention.
【図４】本発明の一実施例に係るイオン打ち込みプロセ
スを示す図。FIG. 4 is a diagram showing an ion implantation process according to an embodiment of the present invention.
【図５】本発明の一実施例に係る電極形成プロセスを示
す図。FIG. 5 is a diagram showing an electrode forming process according to an embodiment of the present invention.
【図６】本発明の一実施例に係る強誘電体投影マスクを
示す図。FIG. 6 is a diagram showing a ferroelectric projection mask according to an embodiment of the present invention.
【図７】本発明の一実施例に係る複合プロセス装置を示
す図。FIG. 7 is a diagram showing a composite process apparatus according to an embodiment of the present invention.
１…光源、２…光、３…レンズ、４…偏光フィルタ、５
…回転台、６…投影マスク、７…偏光フィルタ、８…回
転台、９…縮小レンズ、１０…ウェ−ハ、１１…マスク
パタ−ン、１２…投影パタ−ン、１３…マスク基板、１
４…パタ−ンＡ １５…パタ−ンＢ、１６…透過光、１７…レジスト、１
８…ウェ−ハ、１９…ホウ素イオン、２０、２１…イオ
ン打ち込み領域、２２…タングステン電極、２３…磁場
発生コイル、２４…磁場、２５…イオン発生源、２６…
プロセス処理室、２７…高周波発生電源、２８…上部電
極、２９…ヒ−タ、３０…排気部、３１…ガス導入部、
３２…マスク基板、３３…強誘電体パタ−ンＡ、３４…
強誘電体パタ−ンＢ、３５…エキシマレ−ザ。1 ... Light source, 2 ... Light, 3 ... Lens, 4 ... Polarization filter, 5
... Rotating table, 6 ... Projection mask, 7 ... Polarizing filter, 8 ... Rotating table, 9 ... Reduction lens, 10 ... Wafer, 11 ... Mask pattern, 12 ... Projection pattern, 13 ... Mask substrate, 1
4 ... Pattern A 15 ... Pattern B, 16 ... Transmitted light, 17 ... Resist, 1
8 ... Wafer, 19 ... Boron ion, 20, 21 ... Ion implantation area, 22 ... Tungsten electrode, 23 ... Magnetic field generating coil, 24 ... Magnetic field, 25 ... Ion generating source, 26 ...
Process treatment chamber, 27 ... High frequency power source, 28 ... Upper electrode, 29 ... Heater, 30 ... Exhaust section, 31 ... Gas introduction section,
32 ... Mask substrate, 33 ... Ferroelectric pattern A, 34 ...
Ferroelectric pattern B, 35 ... Excimer laser.
Claims (8)
らなり投影マスク上のパタ−ンをウェ−ハ上に露光する
露光装置において、光源と投影マスクの間に光源から発
せられる光の偏光方向を制御する偏光フィルタと投影マ
スクとウェ−ハの間に投影マスクからの透過光の偏光方
向を制御する偏光フィルタを設けたことを特徴とする露
光装置。1. An exposure apparatus comprising a light source, a projection mask and a projection lens for exposing a pattern on the projection mask onto a wafer, and controlling the polarization direction of the light emitted from the light source between the light source and the projection mask. And a polarizing filter for controlling the polarization direction of the transmitted light from the projection mask between the projection mask and the wafer.
異なる旋光特性を有する旋光性材料で構成されているこ
とを特徴とする特許請求項第１項記載の露光装置。2. The exposure apparatus according to claim 1, wherein the projection mask is composed of at least two or more optical rotatory materials having different optical rotatory characteristics.
ていることを特徴とする特許請求項第１項記載の露光装
置。3. The exposure apparatus according to claim 1, wherein the projection mask is made of a ferroelectric crystal.
しそれぞれ水平方向に回転する機構を設けたことを特徴
とする特許請求項第１項記載の露光装置。4. The exposure apparatus according to claim 1, wherein the two polarizing filters are provided with a mechanism for rotating each of them in the horizontal direction with respect to the projection mask.
向に対して垂直方向に磁場を発生するコイルを設けたこ
とを特徴とする特許請求項第１項記載の露光装置。5. The exposure apparatus according to claim 1, wherein a coil for generating a magnetic field is provided between the two polarization filters in a direction perpendicular to the traveling direction of light.
用い投影マスク上のパタ−ンをウェ−ハ上に露光する露
光方法において、光源と投影マスクの間に設けた偏光フ
ィルタにより光源から発せられる光の偏光方向を一定の
方向に制御しまた投影マスクとウェ−ハの間に設けた偏
光フィルタにより投影マスクからの透過光の偏光方向を
制御することにより投影マスク内のパタ−ンをウェ−ハ
上に投影することを特徴とする露光方法。6. An exposure method for exposing a pattern on a projection mask onto a wafer by using a light source, a projection mask and a projection lens, the light emitted from the light source by a polarizing filter provided between the light source and the projection mask. Of the pattern in the projection mask by controlling the polarization direction of the projection mask to a constant direction and controlling the polarization direction of the transmitted light from the projection mask by a polarization filter provided between the projection mask and the wafer. An exposure method, which comprises projecting onto an upper surface.
る旋光特性を有する旋光性材料で構成された投影マスク
を用い上記のうちの所望の旋光領域を上記偏光フィルタ
の回転もしくは上記偏光フィルタの間に設けたコイルか
ら発生する磁場の強さにより選択してウェ−ハ上に露光
することを特徴とする特許請求項第６項記載の露光方
法。7. A projection mask composed of at least two or more optical rotatory materials having different optical rotatory characteristics is used, and a desired rotatory region among the above is set between rotation of the polarization filter or between the polarization filters. 7. The exposure method according to claim 6, wherein the exposure is performed on the wafer by selecting it according to the strength of the magnetic field generated from the coil provided.
る旋光特性を有するパタ−ン種を上記偏光フィルタの回
転もしくは上記偏光フィルタの間に設けたコイルから発
生する磁場の強さにより選択しながらウェ−ハ上に複数
回に分けて露光することを特徴とする特許請求項第７項
記載の露光方法。8. A pattern type having different optical rotation characteristics for the same wafer is selected according to the rotation of the polarization filter or the strength of a magnetic field generated from a coil provided between the polarization filters. The exposure method according to claim 7, wherein the exposure is performed on the wafer in a plurality of times.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6075624A JPH07283119A (en) | 1994-04-14 | 1994-04-14 | Aligner and exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6075624A JPH07283119A (en) | 1994-04-14 | 1994-04-14 | Aligner and exposure method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07283119A true JPH07283119A (en) | 1995-10-27 |
Family
ID=13581571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6075624A Pending JPH07283119A (en) | 1994-04-14 | 1994-04-14 | Aligner and exposure method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07283119A (en) |
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