JPH07209334A - Micro contact with spring character - Google Patents
Micro contact with spring characterInfo
- Publication number
- JPH07209334A JPH07209334A JP2585594A JP2585594A JPH07209334A JP H07209334 A JPH07209334 A JP H07209334A JP 2585594 A JP2585594 A JP 2585594A JP 2585594 A JP2585594 A JP 2585594A JP H07209334 A JPH07209334 A JP H07209334A
- Authority
- JP
- Japan
- Prior art keywords
- contact
- rising
- conductor
- contact base
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Leads Or Probes (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体のベアチップ
の実装や検査の為の、バネ性を具備したマイクロコンタ
クトに関する発明である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microcontact having a spring property for mounting and inspecting a bare semiconductor chip.
【０００２】[0002]
【従来の技術】従来半導体のベアチップを基板に固定す
る場合、ワイヤボンイングやフリップチップ、タブ等溶
融や溶接を用いるものが有った。又ベアチップの検査に
は棒状のプローブを用いていた。2. Description of the Related Art Conventionally, when a bare semiconductor chip is fixed to a substrate, wire bonding, flip chip, tab melting, or welding has been used. A bar-shaped probe was used for the bare chip inspection.
【０００３】[0003]
【発明が解決しようとする課題】これらには次のような
欠点があった。 （イ）溶融や溶接によりベアチップを基板に固定するも
のはチップの不良が発生した場合基板から不良チップを
外す必要が有る。しかしこの作業は困難な場合が多く結
果的に基板毎廃棄する場合が多かった。 （ロ）プローブを用いてベアチップの特性を計測する場
合プローブから計測機器迄の配線が長いためにインダク
タンスやコンダクタンスか高くなり高周波には対応でき
なかったり、プローブそのものが小さいために製造や、
計測が難しかった。本発明はこれらの欠点を除くために
なされたものである。These have the following drawbacks. (A) In the case where the bare chip is fixed to the substrate by melting or welding, it is necessary to remove the defective chip from the substrate when a defective chip occurs. However, this work is often difficult, and as a result, each substrate is often discarded. (B) When measuring the characteristics of a bare chip using a probe, because the wiring from the probe to the measuring equipment is long, the inductance and conductance become high and it is not possible to handle high frequencies, or because the probe itself is small, manufacturing or
It was difficult to measure. The present invention has been made to eliminate these drawbacks.
【０００４】[0004]
（イ）セラミックスや樹脂等でできた基板（１）の規定
された位置に導体でできたコンタクトベース（７）及び
配線部（２）を設ける。 （ロ）コンタクトベース（７）の規定された位置に導体
でできた立ち上げ部（３）を二カ所設け、更に導体でで
きた平面部（４）により二カ所の立ち上げ部（３）を互
いに接続し、且つコンタクトベース（７）との間に空間
（６）ができるように設ける。 （ハ）平面部（４）の中央部に導体でできた半球状等の
形をした突起、接点部（５）を設ける。この際、立ち上
げ部（３）、平面部（４）を曲面形状としたり、立ち上
げ部（３）を一カ所とした片持ちのバネ形状としてもよ
いし更にこれらを多段に重ねて用いても良い。(A) A contact base (7) made of a conductor and a wiring portion (2) are provided at defined positions on a substrate (1) made of ceramics or resin. (B) Two rising portions (3) made of a conductor are provided at prescribed positions on the contact base (7), and two rising portions (3) are further formed by a flat portion (4) made of a conductor. They are provided so as to be connected to each other and to form a space (6) between them and the contact base (7). (C) A protrusion having a hemispherical shape made of a conductor and a contact portion (5) are provided in the central portion of the flat surface portion (4). At this time, the rising portion (3) and the flat surface portion (4) may have a curved surface shape, or the rising portion (3) may have a single cantilevered spring shape, and these may be stacked in multiple stages. Is also good.
【０００５】[0005]
【作用】本品を使用の場合は検査や実装等の為の基板
（１）にバネ性を具備したマイクロコンタクト（９）を
半導体ベアチップ（８）等の電極と対向する位置に設
け、上から固定機構（１１）を用いて加圧しながら接触
させることにより接点部（５）が相手の電極と接触し、
更に平面部（４）及び立ち上げ部（３）が弾性変形する
ことにより碓実に接触が保たれ、計測器（１０）による
特性計測や実装を行う事ができる。When this product is used, the substrate (1) for inspection, mounting, etc. is provided with a microcontact (9) having a spring property at a position facing the electrodes of the semiconductor bare chip (8) and the like. By contacting the fixing mechanism (11) while applying pressure, the contact part (5) comes into contact with the mating electrode,
Further, since the flat surface portion (4) and the rising portion (3) are elastically deformed, the contact is maintained, and the characteristics can be measured and mounted by the measuring instrument (10).
【０００６】[0006]
【実施例】以下、発明の実施例１について図１、図２、
図３、図６、図７を用いて脱明する。 （イ）セラミックスや樹脂等でできた基板（１）の規定
された位置に導体でできたコンタクトベース（７）及び
配線部（２）を基板製造技術等を用いて設ける。 （ロ）コンタクトベース（７）の規定された位置に導体
でできた立ち上げ部（３）を二カ所設け、更に導体でで
きた平面部（４）により二カ所の立ち上げ部（３）を互
いに接続し、且つコンタクトベース（７）との間に空間
（６）ができるように設ける。 （ハ）平面部（４）の中央部に導体でできた半球状等の
形をした突起、接点部（５）を設ける。 本発明は以上のような構成で本品を使用の場合は図６、
図７に示すように検査や実装等の為の基板（１）にバネ
性を具備したマイクロコンタクト（９）を半導体ベアチ
ップ（８）等の電極と対向する位置に設け、上から固定
機構（１１）を用いて加圧しながら接触させることによ
り接点部（５）が相手の電極と接触し更に平面部（４）
及び立ち上げ部（３）が主に弾性変形することにより確
実に接触が保たれ、計測器（１０）による特性計測や実
装を行う事ができる。この際図３に示すように変位及び
接触圧を調整するために多段に重ねても良い。また、立
ち上げ部（３）、平面部（４）を曲面で構成しても良
い。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 of the present invention will be described below with reference to FIGS.
The description will be made with reference to FIGS. 3, 6 and 7. (A) A contact base (7) made of a conductor and a wiring part (2) are provided at a defined position of a substrate (1) made of ceramics or resin by using a substrate manufacturing technique or the like. (B) Two rising portions (3) made of a conductor are provided at prescribed positions on the contact base (7), and two rising portions (3) are further formed by a flat portion (4) made of a conductor. They are provided so as to be connected to each other and to form a space (6) between them and the contact base (7). (C) A protrusion having a hemispherical shape made of a conductor and a contact portion (5) are provided in the central portion of the flat surface portion (4). When the present invention is used with the above-mentioned configuration, the present invention is shown in FIG.
As shown in FIG. 7, a substrate (1) for inspection, mounting, etc. is provided with a microcontact (9) having a spring property at a position facing an electrode of a semiconductor bare chip (8) or the like, and a fixing mechanism (11) is arranged from above. ), The contact part (5) comes into contact with the mating electrode, and the flat part (4)
Also, the rising portion (3) is mainly elastically deformed, so that the contact is surely maintained, and the characteristic can be measured and mounted by the measuring instrument (10). At this time, as shown in FIG. 3, they may be stacked in multiple stages in order to adjust the displacement and the contact pressure. Further, the rising portion (3) and the flat surface portion (4) may be curved surfaces.
【０００７】以下、発明の実施例２について図４、図５
を用いて説明する。 （イ）セラミックスや樹脂でできた基板（１）の規定さ
れた位置に導体でできたコンタクトベース（７）及び配
線部（２）を基板製造技術等を用いて設ける。 （ロ）コンタクトベース（７）の規定された位置に導体
でできた立ち上げ部（３）を一カ所設け、更に導体でで
きた平面部（４）の端を立ち上げ部（３）と接続し、且
つコンタクトベース（７）との間に空間（６）ができる
ように設ける。 （ハ）平面部（４）の立ち上げ部（３）と逆の端に導体
でできた半球状等の形をした突起、接点部（５）を設け
る。 この際図５に示すように変位及び接圧を調整するために
多段に重ねても良い。また、立ち上げ部（３）、平面部
（４）を曲面で構成しても良い。A second embodiment of the invention will be described below with reference to FIGS.
Will be explained. (A) A contact base (7) made of a conductor and a wiring portion (2) are provided at a specified position on a substrate (1) made of ceramics or resin by using a substrate manufacturing technique or the like. (B) A single rising part (3) made of a conductor is provided at a specified position on the contact base (7), and the end of the flat part (4) made of a conductor is connected to the rising part (3). In addition, a space (6) is formed between the contact base (7) and the contact base (7). (C) A hemispherical projection made of a conductor or the like, and a contact portion (5) are provided at the end opposite to the rising portion (3) of the plane portion (4). At this time, as shown in FIG. 5, they may be stacked in multiple stages in order to adjust the displacement and the contact pressure. Further, the rising portion (3) and the flat surface portion (4) may be curved surfaces.
【０００８】[0008]
（イ）構造が単純で、基板製造技術を用いることができ
るため微少な形状で微少なピッチのコンタクトが構成で
きるため、ベアチップ等の電極との多点接触が可能とな
る。 （ロ）コンタクトの導体の長さが短いためにインダクタ
ンスやコンダクタンスを従来のプローブタイプの検査ジ
グより小さくでき、より高周波に対応する事ができる。 （ハ）バネ性を具備しているため基板や加重のばらつき
を吸収できるため安定的な接触を保つ事ができる。 （ニ）従来のようなリフローを用いた溶融接続やワイヤ
ボンディングの様な溶接接続と異なり、機械的接続のた
め半導体の不良が発生した場合、すばやくかつ狭い範囲
の交換で済ます事が可能となり価格的に有利になる。(A) Since the structure is simple and the substrate manufacturing technique can be used, contacts with a minute shape and a minute pitch can be configured, and thus, multi-point contact with electrodes such as bare chips becomes possible. (B) Since the conductor of the contact is short, the inductance and conductance can be made smaller than those of the conventional probe type inspection jig, and it is possible to cope with higher frequencies. (C) Since it has a spring property, variations in the substrate and weight can be absorbed, and stable contact can be maintained. (D) Unlike the conventional fusion connection using reflow or welding connection such as wire bonding, if a semiconductor defect occurs due to mechanical connection, it is possible to replace quickly and in a narrow range, which makes the price Will be advantageous.
【図１】実施例１の斜視図である。FIG. 1 is a perspective view of a first embodiment.
【図２】実施例１の断面図である。FIG. 2 is a sectional view of the first embodiment.
【図３】実施例１の応用例の断面図である。FIG. 3 is a cross-sectional view of an application example of the first embodiment.
【図４】実施例２の斜視図である。FIG. 4 is a perspective view of a second embodiment.
【図５】実施例２の応用例の斜視図であるFIG. 5 is a perspective view of an application example of the second embodiment.
【図６】本発明を利用した計測概要の分解斜視図であ
る。FIG. 6 is an exploded perspective view of the outline of measurement using the present invention.
【図７】本発明を利用した実装概要の断面図である。FIG. 7 is a cross-sectional view of a mounting outline using the present invention.
１ 基板 ２ 配線部 ３ 立ち上げ部 ４ 平面部 ５ 接点部 ６ 空間 ７ コンタクトベース ８ 半導体ベアチップ ９ バネ性を具備したマイクロコンタクト １０ 計測器 １１ 固定機構 DESCRIPTION OF SYMBOLS 1 Substrate 2 Wiring part 3 Start-up part 4 Plane part 5 Contact part 6 Space 7 Contact base 8 Semiconductor bare chip 9 Micro contact with spring 10 Measuring instrument 11 Fixing mechanism
Claims (3)
（１）に導体でできたコンタクトベース（７）を設け
る。 （ロ）コンタクトベース（７）の適当な位置に導体でで
きた立ち上げ部（３）を設け、導体でできた平面部
（４）と接続し、且つコンタクトベース（７）との間に
空間（６）ができるように設ける。 （ハ）平面部（４）の適当な位置に導体でできた半球状
等の形をした突起、接点部（５）を設ける。以上の構成
のバネ性を具備したマイクロコンタクト(A) A contact base (7) made of a conductor is provided on a substrate (1) made of ceramics or resin. (B) A rising part (3) made of a conductor is provided at an appropriate position of the contact base (7), is connected to a flat part (4) made of a conductor, and has a space between it and the contact base (7). Provide so that (6) can be performed. (C) Protrusions having a hemispherical shape made of a conductor and contact portions (5) are provided at appropriate positions on the flat surface portion (4). Micro contact having the above structure and having spring property
らか若しくは両方の形状を曲面、例えば円筒や球殻から
構成した請求項１のバネ性を具備したマイクロコンタク
ト2. The microcontact having spring property according to claim 1, wherein either or both of the rising portion (3) and the flat surface portion (4) are formed of a curved surface such as a cylinder or a spherical shell.
（３）、平面部（４）及び接点部（５）を交互に多段に
重ね、設けた請求項１及び請求項２のバネ性を具備した
マイクロコンタクト。3. The spring property according to claim 1 or 2, wherein a contact base (7), a rising portion (3), a flat surface portion (4) and a contact portion (5) are alternately stacked in multiple stages. Made micro contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2585594A JPH07209334A (en) | 1994-01-12 | 1994-01-12 | Micro contact with spring character |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2585594A JPH07209334A (en) | 1994-01-12 | 1994-01-12 | Micro contact with spring character |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07209334A true JPH07209334A (en) | 1995-08-11 |
Family
ID=12177445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2585594A Pending JPH07209334A (en) | 1994-01-12 | 1994-01-12 | Micro contact with spring character |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07209334A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000055936A (en) * | 1998-08-12 | 2000-02-25 | Tokyo Electron Ltd | Contactor |
| KR20000023293A (en) * | 1998-09-21 | 2000-04-25 | 어드밴테스트 코포레이션 | Packaging and interconnection of contact structure |
| JP2000346878A (en) * | 1999-04-30 | 2000-12-15 | Advantest Corp | Contact structure formed by micronizing process |
| KR20030046854A (en) * | 2001-12-06 | 2003-06-18 | 이호도 | The probe needle structure for the inspection of LCD panel and the forming process |
| US6727580B1 (en) | 1993-11-16 | 2004-04-27 | Formfactor, Inc. | Microelectronic spring contact elements |
| KR100606225B1 (en) * | 2003-11-07 | 2006-07-31 | 니혼 덴시자이료 가부시키가이샤 | Probe card |
| JP2007147639A (en) * | 1998-08-12 | 2007-06-14 | Tokyo Electron Ltd | Contactor |
| JP2008518228A (en) * | 2004-10-26 | 2008-05-29 | パイコム・コーポレーション | Vertical electrical contact and method for manufacturing the same |
| US7579269B2 (en) | 1993-11-16 | 2009-08-25 | Formfactor, Inc. | Microelectronic spring contact elements |
-
1994
- 1994-01-12 JP JP2585594A patent/JPH07209334A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6727580B1 (en) | 1993-11-16 | 2004-04-27 | Formfactor, Inc. | Microelectronic spring contact elements |
| US7579269B2 (en) | 1993-11-16 | 2009-08-25 | Formfactor, Inc. | Microelectronic spring contact elements |
| JP2000055936A (en) * | 1998-08-12 | 2000-02-25 | Tokyo Electron Ltd | Contactor |
| JP2007147639A (en) * | 1998-08-12 | 2007-06-14 | Tokyo Electron Ltd | Contactor |
| JP4490978B2 (en) * | 1998-08-12 | 2010-06-30 | 東京エレクトロン株式会社 | Contactor |
| KR20000023293A (en) * | 1998-09-21 | 2000-04-25 | 어드밴테스트 코포레이션 | Packaging and interconnection of contact structure |
| JP2000346878A (en) * | 1999-04-30 | 2000-12-15 | Advantest Corp | Contact structure formed by micronizing process |
| KR20030046854A (en) * | 2001-12-06 | 2003-06-18 | 이호도 | The probe needle structure for the inspection of LCD panel and the forming process |
| KR100606225B1 (en) * | 2003-11-07 | 2006-07-31 | 니혼 덴시자이료 가부시키가이샤 | Probe card |
| US7208964B2 (en) | 2003-11-07 | 2007-04-24 | Nihon Denshizairyo Kabushiki Kaisha | Probe card |
| JP2008518228A (en) * | 2004-10-26 | 2008-05-29 | パイコム・コーポレーション | Vertical electrical contact and method for manufacturing the same |
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