JPH07171478A - Substrate treating device - Google Patents

Substrate treating device

Info

Publication number
JPH07171478A
JPH07171478A JP34515093A JP34515093A JPH07171478A JP H07171478 A JPH07171478 A JP H07171478A JP 34515093 A JP34515093 A JP 34515093A JP 34515093 A JP34515093 A JP 34515093A JP H07171478 A JPH07171478 A JP H07171478A
Authority
JP
Japan
Prior art keywords
substrate
processing
processing unit
transfer means
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34515093A
Other languages
Japanese (ja)
Inventor
Yoshihiro Koyama
芳弘 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP34515093A priority Critical patent/JPH07171478A/en
Publication of JPH07171478A publication Critical patent/JPH07171478A/en
Pending legal-status Critical Current

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To improve treating efficiency while reducing the size over the entire part of the device. CONSTITUTION:Two pieces of third cooling treatment sections 19, 19 for parallel treatment are installed between a first treatment unit 2 having a first substrate transporting means 7 capable of transporting a substrate W in a horizontal direction and a second treatment unit 3 having a second substrate transporting means 18 capable of transporting the substrate W in a horizontal direction. The treating device is so constituted that the substrate W is carried into the third cooling treatment sections 19, 19 and is ejected out of these sections respectively by the first and second substrate transporting means 7, 18.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体ウエハや液晶表
示装置用のガラス基板やフォトマスク用ガラス基板等の
基板を各種の処理ユニット間に搬送するとともに所定の
基板処理部に搬送し、その基板に対してフォトレジスト
液を塗布処理したり、露光処理したり、基板に塗布され
たフォトレジストを現像処理するなどのような基板処理
装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention conveys a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display device or a glass substrate for a photomask between various processing units and also to a predetermined substrate processing section, The present invention relates to a substrate processing apparatus for applying a photoresist solution to a substrate, performing an exposure process, developing a photoresist applied to a substrate, and the like.

【0002】[0002]

【従来の技術】この種の基板処理装置では、従来一般
に、各種の処理ユニットそれぞれに基板を水平方向に搬
送する基板搬送手段を設け、かつ、処理ユニット間にイ
ンターフェース部を設け、一方の処理ユニットから他方
の処理ユニットに基板を搬送するときに、一旦、一方の
処理ユニットの基板搬送手段によりインターフェース部
に基板を搬送して受け止めさせ、その基板を他方の処理
ユニットの基板搬送手段により取り出して受け渡してい
くように構成されている。
2. Description of the Related Art In a substrate processing apparatus of this type, conventionally, a substrate transfer means for transferring a substrate in a horizontal direction is provided in each of various processing units, and an interface section is provided between the processing units to provide one processing unit. When a substrate is transferred from one processing unit to another processing unit, the substrate is temporarily transferred to the interface section by the substrate transfer unit of one processing unit and received, and the substrate is taken out and transferred by the substrate transfer unit of the other processing unit. It is configured to go.

【0003】ところが、各処理ユニット間にインターフ
ェース部を介在するために、装置全体が大型化する問題
があり、また、インターフェース部での受け渡しのため
に余分な時間が必要となり、例えば、露光装置をロス無
く稼動させるなどといった場合に、露光装置で露光処理
を終えて基板を取り出したときに、次の基板を露光装置
に供給しなければならず、露光装置での処理時間の間に
前処理が済んだ基板が得られるようにするなどといった
ために、前処理でのユニットの数を多くしなければなら
ないといった不都合があった。
However, since the interface section is interposed between the processing units, there is a problem that the entire apparatus becomes large in size, and extra time is required for the transfer at the interface section. In the case of operating without loss, for example, when the exposure apparatus finishes the exposure process and takes out the substrate, the next substrate must be supplied to the exposure apparatus, and the pretreatment is performed during the processing time of the exposure apparatus. There is a disadvantage that the number of units in the pretreatment must be increased in order to obtain a finished substrate.

【0004】そこで、インターフェース部の介在に起因
する装置の大型化を回避できるようにするために、例え
ば、特開平4−84410号公報のように、基板にレジ
ストを塗布して加熱する第1の装置と、レジストが塗布
された基板を露光する第2の装置との間に、第1の装置
から搬入された基板を温調するとともにセンタリングを
行う1個の温調ステージを設けたものがある。
Therefore, in order to avoid the increase in size of the device due to the interposition of the interface portion, for example, as in Japanese Patent Application Laid-Open No. 4-84410, a first method is to apply a resist to a substrate and heat it. There is one in which one temperature adjusting stage is provided between the device and a second device for exposing a substrate coated with a resist, for adjusting the temperature of the substrate carried in from the first device and performing centering. .

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上述の
ような従来例の場合、基板を露光する第2の装置での処
理に要する時間が基板の温調に要する時間よりも短い場
合、温調ステージでの処理に起因して第2の装置の稼動
時間にロスを生じ、装置の大型化を回避できても処理効
率の低下を回避できない欠点があった。
However, in the case of the conventional example as described above, when the time required for the processing in the second apparatus for exposing the substrate is shorter than the time required for the temperature control of the substrate, the temperature control stage is used. However, there is a drawback in that the operation time of the second device is lost due to the processing in step 1, and the reduction in processing efficiency cannot be avoided even if the size of the device can be avoided.

【0006】本発明は、このような事情に鑑みてなされ
たものであり、請求項1に係る発明の基板処理装置は、
装置全体を小型化できながら処理効率を向上できるよう
にすることを目的とし、また、請求項2に係る発明の基
板処理装置は、装置全体をより一層コンパクトにできる
とともに基板搬送時間を短縮して処理効率を一層向上で
きるようにすることを目的とする。
The present invention has been made in view of such circumstances, and the substrate processing apparatus of the invention according to claim 1 is
An object of the present invention is to make it possible to improve the processing efficiency while reducing the size of the entire apparatus. Further, the substrate processing apparatus of the invention according to claim 2 can make the entire apparatus more compact and shorten the substrate transfer time. The purpose is to further improve the processing efficiency.

【0007】[0007]

【課題を解決するための手段】請求項1に係る発明の基
板処理装置は、上述のような目的を達成するために、水
平方向に基板を搬送可能な第1の基板搬送手段を有する
第1の処理ユニットと、水平方向に前記基板を搬送可能
な第2の基板搬送手段を有する第2の処理ユニットとの
間に、第1および第2の基板搬送手段の少なくとも一方
によって基板を搬入するとともに他方によって基板を搬
出する複数の並行処理用の基板処理部を設けて構成す
る。
According to a first aspect of the present invention, there is provided a substrate processing apparatus having a first substrate transfer means capable of horizontally transferring a substrate in order to achieve the above object. Between the first processing unit and the second processing unit having the second substrate transfer unit capable of horizontally transferring the substrate, and carrying in the substrate by at least one of the first and second substrate transfer units. On the other hand, a plurality of substrate processing units for parallel processing for carrying out the substrate are provided and configured.

【0008】また、請求項2に係る発明の基板処理装置
は、上述のような目的を達成するために、上記請求項1
に係る発明の基板処理装置の第1の処理ユニットにおい
て、第1の基板搬送手段の第2の処理ユニットとの並設
方向に向かう水平方向の移動経路を挟んだ両側それぞれ
に基板処理部を有し、かつ、第2の処理ユニットにおい
て、第2の基板搬送手段の第1の処理ユニットとの並設
方向に向かう水平方向の移動経路を挟んだ両側それぞれ
に基板処理部を有するように構成する。
In order to achieve the above-mentioned object, the substrate processing apparatus according to the second aspect of the present invention has the above-mentioned first aspect.
In the first processing unit of the substrate processing apparatus according to the invention, the substrate processing section is provided on each of both sides of the horizontal movement path of the first substrate transfer means in the direction parallel to the second processing unit. In addition, the second processing unit is configured to have the substrate processing units on both sides of the horizontal movement path of the second substrate transfer means in the direction parallel to the first processing unit. .

【0009】[0009]

【作用】請求項1に係る発明の基板処理装置の構成によ
れば、第1の処理ユニットで処理した基板を基板処理部
で別の処理を施した後に第2の処理ユニットで処理する
ような場合において、第1の処理ユニットから第2の処
理ユニットへの受け渡しを基板処理部を介して行うとと
もに、その基板処理部を複数設けて並行処理することに
よって、各基板処理部での基板に対する処理時間が第2
の処理ユニットでの基板に対する処理時間よりも長い場
合でも、複数の基板処理部のうちから、適宜処理の終了
した基板を選択して取り出し、第2の処理ユニットにす
みやかに供給して処理させることができる。
According to the structure of the substrate processing apparatus of the first aspect of the present invention, the substrate processed by the first processing unit is subjected to another processing by the substrate processing unit and then processed by the second processing unit. In this case, the first processing unit is transferred to the second processing unit via the substrate processing section, and a plurality of the substrate processing sections are provided for parallel processing so that the substrates are processed by the respective substrate processing sections. Time is second
Even when the processing time for the substrate in the processing unit is longer than the processing time, the substrate, which has been appropriately processed, is selected and taken out from the plurality of substrate processing units, and is promptly supplied to the second processing unit for processing. You can

【0010】また、請求項2に係る発明の基板処理装置
の構成によれば、第1および第2の処理ユニットそれぞ
れにおいて、例えば、レジスト塗布のための基板処理部
と、その後の加熱ならびに冷却のための基板処理部とい
った基板処理部どうしを、第1および第2の処理ユニッ
トの並設方向に向かう第1および第2の基板搬送手段そ
れぞれの水平方向の移動経路を間にして振り分け、互い
に近接して配置できるとともに、第1および第2の基板
搬送手段それぞれによる基板処理部間での基板の搬送距
離を短くすることができる。
According to the structure of the substrate processing apparatus of the second aspect of the present invention, in each of the first and second processing units, for example, a substrate processing unit for resist coating and subsequent heating and cooling are performed. The substrate processing units such as the substrate processing unit for allocating the first and second processing units are allocated to each other with the horizontal movement paths of the first and second substrate transfer units facing each other in the direction, and close to each other. In addition to the above, the substrate transfer distance between the substrate processing sections by the first and second substrate transfer means can be shortened.

【0011】[0011]

【実施例】次に、本発明の実施例を図面に基づいて詳細
に説明する。
Embodiments of the present invention will now be described in detail with reference to the drawings.

【0012】図1は本発明に係る基板処理装置の実施例
を示す全体概略斜視図である。
FIG. 1 is an overall schematic perspective view showing an embodiment of a substrate processing apparatus according to the present invention.

【0013】この基板処理装置は、半導体ウエハや液晶
表示装置用のガラス基板やフォトマスク用ガラス基板等
の基板Wに対してフォトレジスト液を塗布処理するとと
もに露光ならびに現像処理するための装置であり、大き
く分けて、未処理基板や処理済み基板を保管するインデ
クサーユニット1と、基板Wを洗浄処理・熱処理・レジ
スト塗布処理する各種の基板処理部を備えた第1の処理
ユニット2と、エッジ露光処理・現像処理・熱処理する
各種の基板処理部を備えた第2の処理ユニット3と、イ
ンターフェース4と、露光ユニット5(図2参照)とか
ら構成されている。
This substrate processing apparatus is an apparatus for applying a photoresist solution to a substrate W such as a semiconductor wafer, a glass substrate for a liquid crystal display device, or a glass substrate for a photomask, as well as exposing and developing it. , An indexer unit 1 for storing unprocessed substrates and processed substrates, a first processing unit 2 including various substrate processing units for cleaning, heat-treating, and resist-coating a substrate W, and an edge The second processing unit 3 includes various substrate processing units that perform exposure processing, development processing, and heat processing, an interface 4, and an exposure unit 5 (see FIG. 2).

【0014】インデクサーユニット1は、基板Wを収納
するカセットCを一列状態に載置する固定の基台6と、
カセットCに対して基板Wを出し入れするとともに、後
述する第1の基板搬送手段7との基板受渡し位置Pと各
カセットCの間で基板Wを運ぶインデクサー搬送ロボッ
ト8から構成されている。前記カセットC…それぞれ内
には、基板Wを多段に収納できるようになっている。
The indexer unit 1 includes a fixed base 6 on which the cassettes C containing the substrates W are placed in a line.
The indexer transport robot 8 transports the substrate W between the cassette C and the substrate transfer position P with the first substrate transport means 7, which will be described later. Each of the cassettes C ... Can accommodate substrates W in multiple stages.

【0015】第1の処理ユニット2には、図2の(a)
の全体平面図、および、図2の(b)の全体概略縦断面
図に示すように、基板Wを回転しながらその表面に洗浄
液を供給する1個の洗浄処理部9と、洗浄処理後の基板
の表面を疎水化処理するために水平方向に並設された一
対の疎水化処理部10,10と、疎水化処理部10,1
0それぞれの下方に設けられて疎水化処理後の基板Wを
冷却する第1の冷却処理部11,11と、基板の表面に
フォトレジスト液を塗布処理するために水平方向に並設
された一対の塗布処理部12,12と、前記疎水化処理
部10,10上にそれぞれ二段づつ載置された合計4個
の第1の加熱処理部13…と、各処理部などに基板Wを
搬送して搬入・搬出する第1の基板搬送手段7とが備え
られている。
The first processing unit 2 has a structure shown in FIG.
As shown in the overall plan view of FIG. 2 and the overall schematic vertical sectional view of FIG. 2B, one cleaning processing unit 9 that supplies the cleaning liquid to the surface of the substrate W while rotating the substrate W, and A pair of hydrophobizing units 10, 10 arranged in parallel in the horizontal direction for hydrophobizing the surface of the substrate, and the hydrophobizing units 10, 1.
0 first cooling processing units 11 and 11 provided below each of them to cool the substrate W after the hydrophobization processing, and a pair arranged in parallel in the horizontal direction for coating the surface of the substrate with a photoresist solution. Of the coating treatment sections 12 and 12, the total of four first heat treatment sections 13 placed in two stages on the hydrophobic treatment sections 10 and 10, and the substrate W is transferred to each treatment section and the like. And a first substrate transfer means 7 for loading and unloading.

【0016】前記洗浄処理部9、疎水化処理部10,1
0および第1の加熱処理部13…と、塗布処理部12,
12とは、第1の基板搬送手段7の第1および第2の処
理ユニット2,3の並設方向を向いた水平方向の移動経
路Rを挟んで振り分け配置されている。
The cleaning processing section 9 and the hydrophobic processing sections 10 and 1
0 and the first heat treatment section 13 ... And the coating treatment section 12,
The reference numeral 12 is distributed and arranged with a horizontal movement path R facing the direction in which the first and second processing units 2 and 3 of the first substrate transfer means 7 are arranged in parallel.

【0017】第2の処理ユニット3には、水平方向に並
設された一対のエッジ露光処理部14,14と、水平方
向に一対づつ並設されてそれぞれ4段づつ載置された2
個の第2の加熱処理部15a,15aおよび6個の第3
の加熱処理部15b…と、上下2段に載置された第2の
冷却処理部16,16と、水平方向に並設されて露光処
理後の基板Wを現像処理する3個の現像処理部17…
と、各処理部などに基板Wを搬送して搬入・搬出する第
2の基板搬送手段18とが備えられている。
In the second processing unit 3, a pair of edge exposure processing parts 14, 14 arranged in parallel in the horizontal direction, and a pair of edge exposure processing parts 14 arranged in the horizontal direction are arranged in four stages, respectively.
Second heat treatment parts 15a, 15a and six third heat treatment parts
, And the second cooling processing units 16 and 16 placed in the upper and lower two stages, and three development processing units that are arranged in parallel in the horizontal direction to develop the substrate W after the exposure processing. 17 ...
And a second substrate carrying means 18 for carrying the substrate W into and out of each processing section.

【0018】前記エッジ露光処理部14,14、第2お
よび第3の加熱処理部15a,15b…および第2の冷
却処理部16,16と、現像処理部17…とは、第2の
基板搬送手段18の第1および第2の処理ユニット2,
3の並設方向を向いた水平方向の移動経路Rを挟んで振
り分け配置されている。
The edge exposure processing sections 14, 14, the second and third heat processing sections 15a, 15b ... And the second cooling processing sections 16, 16 and the development processing section 17 ... The first and second processing units 2, 2 of the means 18.
3 are arranged so as to be sandwiched by a horizontal movement path R facing the parallel installation direction.

【0019】第1の処理ユニット2の洗浄処理部9と第
2の処理ユニット3の第3の加熱処理部15bとの間
で、かつ、第2の冷却処理部16の一部の上方に位置さ
せて上下2段の第3の冷却処理部19,19が設けられ
ている。図中Bは、各種のコントローラを内装したコン
トローラボックスを示している。
Located between the cleaning processing section 9 of the first processing unit 2 and the third heating processing section 15b of the second processing unit 3 and above a part of the second cooling processing section 16. The upper and lower third cooling processing units 19 and 19 are provided. B in the drawing shows a controller box in which various controllers are installed.

【0020】前記第1および第2の基板搬送手段7,1
8それぞれは、移動経路Rに沿っての移動、昇降および
水平面内での回転が可能な支持部材20に、基板Wの外
周縁側を載置保持する上下一対の支持アーム21,21
をそれぞれ直線移動可能に設けて構成されている。この
第1および第2の基板搬送手段7,18それぞれは、隣
合うユニット2または3側の端まで移動した状態で、前
記第3の冷却処理部19,19に対して基板Wを搬入な
らびに搬出できるように構成されている。なお、第1お
よび第2の基板搬送手段7,18は、各処理ユニット
2,3内の各処理部に対して基板を搬入・搬出する場合
には、支持部材20を駆動して、図2の(a)に実線で
示す如く、支持アーム21の移動方向が支持部材20の
移動経路Rと直角になるようにする。そして、支持アー
ム21を進退移動させることにより基板を搬入・搬出す
る。それに対し、第3の冷却処理部19,19に対して
基板を搬入・搬出する場合には、支持部材20を駆動し
て、図2の(a)に2点鎖線で示す如く、支持アーム2
1の移動方向が支持部材20の移動経路Rに対して例え
ば45度の角度だけ傾いた状態になるようにする。そし
て、支持アーム21を進退移動させることにより基板を
搬入・搬出する。
The first and second substrate transfer means 7, 1
8 is a pair of upper and lower support arms 21 and 21 for mounting and holding the outer peripheral edge side of the substrate W on a support member 20 that can be moved along a movement path R, moved up and down, and rotated in a horizontal plane.
Are linearly movable. The first and second substrate transfer means 7 and 18 carry in and carry out the substrate W to and from the third cooling processing parts 19 and 19, respectively, in a state where they have moved to the ends of the adjacent units 2 or 3. It is configured to be able to. Note that the first and second substrate transfer means 7 and 18 drive the support member 20 to load and unload a substrate to and from each processing unit in each processing unit 2 and 3, respectively. As indicated by a solid line in (a) of FIG. 7, the moving direction of the support arm 21 is perpendicular to the moving path R of the support member 20. Then, the substrate is loaded and unloaded by moving the support arm 21 forward and backward. On the other hand, when the substrate is loaded into or unloaded from the third cooling processing unit 19, 19, the support member 20 is driven to move the support arm 2 as shown by a chain double-dashed line in FIG.
The moving direction of 1 is inclined with respect to the moving path R of the support member 20 by an angle of, for example, 45 degrees. Then, the substrate is loaded and unloaded by moving the support arm 21 forward and backward.

【0021】次に、上記基板処理装置による一連の処理
動作を、図3の処理工程のフローと処理時間との関係を
示す図を用いて説明する。
Next, a series of processing operations by the substrate processing apparatus will be described with reference to FIG. 3 showing the relationship between the flow of processing steps and processing time.

【0022】先ず、インデクサーユニット1(INDと
表示)において、インデクサー搬送ロボット8によりカ
セットCから未処理基板Wを取り出して基板受渡し位置
Pに搬送し(S1)、第1の基板搬送手段7の一方の支
持アーム21に渡す。また、もし第1の基板搬送手段7
の他方の支持アーム21に処理済み基板Wがあれば、そ
れを受け取って搬送してカセットCに収納する。
First, in the indexer unit 1 (denoted as IND), the unprocessed substrate W is taken out from the cassette C by the indexer transport robot 8 and transported to the substrate delivery position P (S1), and the first substrate transport means 7 operates. Hand over to one support arm 21. Also, if the first substrate transfer means 7
If the processed substrate W is present on the other support arm 21, the substrate W is received, transported, and stored in the cassette C.

【0023】次いで、第1の基板搬送手段7により、基
板受渡し位置Pから洗浄処理部9(SSWと表示)に基
板Wを搬送して洗浄し(S2)、洗浄処理後に、疎水化
処理部10(AHと表示)に基板Wを搬送して疎水化処
理する(S3)。
Next, the first substrate transfer means 7 transfers the substrate W from the substrate transfer position P to the cleaning processing section 9 (denoted by SSW) for cleaning (S2), and after the cleaning processing, the hydrophobic processing section 10 The substrate W is transported to (displayed as AH) and subjected to a hydrophobic treatment (S3).

【0024】疎水化処理後には、基板Wを第1の冷却処
理部11(CPと表示)に搬送して冷却し(S4)、常
温程度にまで戻してから塗布処理部12(SCと表示)
に基板Wを搬送し、基板表面にフォトレジスト液を塗布
する(S5)。
After the hydrophobizing treatment, the substrate W is transported to the first cooling processing unit 11 (denoted by CP) and cooled (S4) and returned to room temperature, and then the coating treatment unit 12 (denoted by SC).
The substrate W is transported to and the photoresist solution is applied to the substrate surface (S5).

【0025】その後、塗布処理を終えた基板Wを第1の
加熱処理部13(HPと表示)に搬送して加熱し(S
6)、次いで、第1の基板搬送手段7により、加熱処理
後の基板Wを第3の冷却処理部19(CPと表示)に搬
送して冷却し(S7)、常温程度にまで戻す。
After that, the substrate W, which has been subjected to the coating process, is conveyed to the first heat processing section 13 (denoted by HP) and heated (S).
6) Then, the first substrate transfer means 7 transfers the substrate W after the heat treatment to the third cooling processing section 19 (denoted as CP) to cool it (S7) and returns it to about room temperature.

【0026】冷却処理後において、第2の基板搬送手段
18により基板Wを第3の冷却処理部19から取り出
し、エッジ露光処理部14(EEWと表示)に基板Wを
搬送して基板Wの外周縁に対する露光処理を行い(S
8)、しかる後に、露光ユニット5(EXPと表示)に
基板Wを搬送して基板全面に対する露光を行って(S
9)から第2の加熱処理部15a(HPと表示)に基板
Wを搬送して加熱する(S10)。
After the cooling processing, the substrate W is taken out of the third cooling processing section 19 by the second substrate transfer means 18, and is transferred to the edge exposure processing section 14 (denoted as EEW) so that the substrate W is not exposed outside the substrate W. The peripheral edge is exposed (S
8) Thereafter, the substrate W is transported to the exposure unit 5 (denoted by EXP) and the entire surface of the substrate is exposed (S).
The substrate W is transported from 9) to the second heat treatment section 15a (denoted by HP) and heated (S10).

【0027】その加熱処理後の基板Wを第3の冷却処理
部19(CPと表示)に搬送して冷却し(S11)、常
温程度にまで戻してから現像処理部17に基板Wを搬送
し、現像処理する(S12)。
The substrate W after the heat treatment is transported to the third cooling processing unit 19 (denoted by CP) to be cooled (S11), returned to room temperature, and then transported to the development processing unit 17. , Development processing is performed (S12).

【0028】現像処理後において、第3の加熱処理部1
5bに基板Wを搬送して加熱し(S13)、しかる後、
加熱処理後の基板Wを第2の基板搬送手段18により取
り出して第3の冷却処理部19内に一旦搬入し(IFと
表示)(S14)、第1の基板搬送手段7にて搬出して
基板受渡し位置Pまで搬送する。なお、このステップS
14においては、基板Wは第3の冷却処理部19を通過
するが、冷却処理は行われない。すなわち、第3の冷却
処理部19には、冷却プレート(図示せず)を貫通した
ピン(図示せず)が昇降可能に設けられ、各基板搬送手
段7,18の支持アーム21からこのピンが基板Wを受
け取って支持した後、ピンが降下して基板Wを冷却プレ
ート上に載置すれば冷却が開始されるのであるが、この
ステップS14においては、第2の基板搬送手段18か
ら前記ピンに基板Wが渡されると、そのピンが降下する
ことなく、第1の基板搬送手段7がピンから基板Wを受
け取って搬出する。なお、この実施例ではステップS1
4においては冷却処理を行っていないが、ステップS1
4において冷却処理を行うようにしてもよい。
After the development processing, the third heat treatment section 1
The substrate W is transported to 5b and heated (S13), and thereafter,
The substrate W after the heat treatment is taken out by the second substrate carrying means 18, once carried into the third cooling processing part 19 (indicated as IF) (S14), and carried out by the first substrate carrying means 7. The substrate is conveyed to the delivery position P. This step S
In 14, the substrate W passes through the third cooling processing section 19, but the cooling processing is not performed. That is, the third cooling processing unit 19 is provided with a pin (not shown) penetrating a cooling plate (not shown) so as to be able to move up and down, and this pin is removed from the support arm 21 of each substrate transfer means 7, 18. After receiving and supporting the substrate W, the pins are lowered and the substrate W is placed on the cooling plate to start cooling. In this step S14, the pins are fed from the second substrate carrying means 18 to each other. When the substrate W is transferred to the substrate W, the first substrate transfer means 7 receives the substrate W from the pin and carries it out without lowering the pin. In this embodiment, step S1
No cooling process is performed in step 4, but step S1
You may make it perform a cooling process in 4.

【0029】そして、以上の動作において、各基板搬送
手段7,18の2本の支持アーム21,21は以下のよ
うに機能する。すなわち、例えばステップS1において
一方の支持アーム21に基板Wを受け取った第1の基板
搬送手段7は、次いで洗浄処理部9の前に移動する。そ
こで、既に洗浄処理部9において洗浄処理済みの基板W
を他方の支持アーム21によって受け取り、空いた洗浄
処理部9に前記一方の支持アーム21の基板Wを搬入す
る(S2)。そして、第1の基板搬送手段7は疎水化処
理部10の前に移動し、そこで、既に疎水化処理部10
において疎水化処理済みの基板を前記一方の支持アーム
21によって受け取り、空いた疎水化処理部10に前記
他方の支持アーム21の洗浄処理済みの基板を搬入する
(S3)。
In the above operation, the two support arms 21 and 21 of each substrate transfer means 7 and 18 function as follows. That is, for example, the first substrate transfer means 7 that has received the substrate W on one of the support arms 21 in step S1 moves to the front of the cleaning processing unit 9 next. Therefore, the substrate W that has already undergone the cleaning processing in the cleaning processing unit 9
Is received by the other support arm 21, and the substrate W of the one support arm 21 is carried into the vacant cleaning processing section 9 (S2). Then, the first substrate transfer means 7 moves to the front of the hydrophobization processing unit 10, and there, already.
In, the substrate subjected to the hydrophobic treatment is received by the one support arm 21, and the substrate subjected to the cleaning treatment of the other support arm 21 is carried into the vacant hydrophobic treatment unit 10 (S3).

【0030】各基板搬送手段7,18は、このように2
本の支持アーム21,21の一方に基板Wを持って各処
理部間を移動し、他方の支持アーム21でその処理部か
ら基板Wを受け取って搬出するとともに、一方の支持ア
ーム21に持っていた基板Wをその処理部へ搬入する動
作を繰り返す。この各基板搬送手段7,18の動きは、
図3のフローの細い矢印のようになり、それぞれが、7
回の移動を1周期として繰り返される。そして、各基板
搬送手段7,18が各処理部間を移動するたび毎に1枚
の基板Wについて、1工程進められることになる。この
基板Wの動きは図3のフローの太い矢印のようになる。
なお、図3のフローの箱の中の左側の数字は各処理部の
個数を示す。
Each substrate transfer means 7 and 18 is
While holding the substrate W on one of the supporting arms 21 and 21 of the book to move between the processing units, the other supporting arm 21 receives the substrate W from the processing unit and carries it out, and also holds it on the one supporting arm 21. The operation of loading the processed substrate W into the processing section is repeated. The movement of each substrate transfer means 7, 18 is
It becomes like the thin arrow in the flow of Fig. 3, and each is 7
Repeated movement is one cycle. Then, each time the substrate transfer means 7 and 18 move between the processing units, one substrate W is advanced by one step. The movement of the substrate W is as shown by the thick arrow in the flow of FIG.
The numbers on the left side of the flow box in FIG. 3 indicate the number of processing units.

【0031】各処理工程における処理時間は、図3に一
例を示すように、様々であり、そのため、設備が極めて
高価である露光ユニット5をフルに稼動させることを考
慮し、例えば露光ユニット5の1枚の基板Wに対する必
要処理時間が35秒であるとすると、各処理工程における
処理部の設置個数は、当該処理工程からその処理時間
(35秒)以内に基板Wを1枚取り出すことができるよう
に設定されている。例えば、第1の加熱処理部13で
は、フォトレジスト液の塗布後の基板Wの加熱に1枚ご
とで 120秒(プロセス処理時間)、そして、基板Wの搬
入・搬出で10秒(受渡処理時間)と合計 130秒(処理所
要時間)必要とする。そのため、第1の加熱処理部13
を4個備えさせて、第1の基板搬送手段7の1周期毎に
ずらして順に加熱処理することにより、基板Wの取り出
し可能な時間を32.5秒(並行処理所要時間)とし、基板
Wを35秒以内に取り出せるようにしているのである。他
の基板処理部についても同様である。なお、ここで受渡
処理時間は、基板搬送手段7との受け渡し時間と、前述
したピンの昇降に要する時間との和である。
The processing time in each processing step varies as shown in FIG. 3 as an example. Therefore, in consideration of fully operating the exposure unit 5 whose equipment is extremely expensive, for example, the exposure unit 5 is operated. Assuming that the required processing time for one substrate W is 35 seconds, the number of processing units installed in each processing step allows one substrate W to be taken out within the processing time (35 seconds) from the processing step. Is set. For example, in the first heat treatment unit 13, each substrate W is heated for 120 seconds (process processing time) after the photoresist solution is applied, and substrate W is loaded and unloaded for 10 seconds (delivery processing time). ) And a total of 130 seconds (processing time). Therefore, the first heat treatment unit 13
By providing four of them and performing heat treatment in sequence by shifting them for each cycle of the first substrate transfer means 7, the time for which the substrate W can be taken out is set to 32.5 seconds (time required for parallel processing), and the substrate W is It is designed so that it can be taken out within seconds. The same applies to the other substrate processing units. Here, the delivery processing time is the sum of the delivery time with the substrate transfer means 7 and the above-mentioned time required for raising and lowering the pins.

【0032】また、第3の冷却処理部19,19におい
ては、第1の処理ユニット2から第2の処理ユニット3
への受け渡し位置において同時に並行して冷却処理する
ため、第1の処理ユニット2内にステップS7に相当す
る冷却処理部を設けた場合と比べて、受け渡し処理のた
めの時間(例えば10秒)が不要になる。更に、第1およ
び第2の処理ユニット2,3それぞれでの工程数(S1
〜S7、S8〜S14)をいずれも7工程にでき、搬送
回数を低減でき、各工程ごとの搬送時間(各基板搬送手
段7,18の1回の移動時間と、処理部との1回の受け
渡し時間との和)が5秒であれば、第1および第2の基
板搬送手段7,18それぞれの搬送周期を露光ユニット
5での処理時間と同じ35秒にでき、その結果、1個の露
光ユニット5に対して、2個の処理ユニット2,3と1
個のインターフェース4とを備えるだけで基板処理装置
を構成できる。第1の処理ユニット2内にステップS7
に相当する冷却処理部を設けた場合は、受け渡しのため
の時間が1回分よけいに必要となり、また、工程数が8
工程となって一方のユニットでの搬送周期が40秒になっ
てしまい、露光ユニット5の処理時間である35秒に達し
ないことになる。その場合、35秒毎に1枚の基板を処理
するためには、1つの基板搬送手段が受け持つ工程数を
減少させるために基板搬送手段の数を増加させる必要が
あり、結果として、ユニット数を増加させなければなら
ず、装置全体が大型化してしまうことになっていた。
Further, in the third cooling processing section 19, 19, the first processing unit 2 to the second processing unit 3
Since the cooling process is performed in parallel at the transfer position to the first and second transfer units, the time (for example, 10 seconds) for the transfer process is shorter than that in the case where the cooling processing unit corresponding to step S7 is provided in the first processing unit 2. It becomes unnecessary. Furthermore, the number of steps (S1) in each of the first and second processing units 2 and 3
To S7, S8 to S14) can be carried out in seven steps, the number of times of carrying can be reduced, and the carrying time for each step (one moving time of each substrate carrying means 7, 18 and one carrying with the processing section). If the sum of the transfer time) is 5 seconds, the transfer cycle of each of the first and second substrate transfer means 7 and 18 can be set to 35 seconds, which is the same as the processing time in the exposure unit 5, and as a result, Two processing units 2, 3 and 1 for the exposure unit 5
The substrate processing apparatus can be configured only by including the individual interfaces 4. Step S7 in the first processing unit 2
When a cooling processing unit corresponding to the above is provided, it takes one time for delivery and the number of steps is eight.
As a process, the carrying cycle of one unit becomes 40 seconds, which does not reach the processing time of the exposure unit 5 of 35 seconds. In that case, in order to process one substrate every 35 seconds, it is necessary to increase the number of substrate transfer means in order to reduce the number of steps handled by one substrate transfer means. As a result, the number of units is increased. It had to be increased, and the size of the entire device was to be increased.

【0033】なお、上記実施例では、第1の処理ユニッ
ト2と第2の処理ユニット3との間に、並行処理用の基
板処理部として第3の冷却処理部19を介在させている
が、本発明としては、例えば、塗布処理部12や第1お
よび第2の加熱処理部13,15や第1および第3の冷
却処理部11,19や現像処理部17など、各種の基板
処理部に代えて実施できる。
In the above embodiment, the third cooling processing unit 19 is interposed between the first processing unit 2 and the second processing unit 3 as a substrate processing unit for parallel processing. The present invention is applicable to various substrate processing units such as the coating processing unit 12, the first and second heat processing units 13 and 15, the first and third cooling processing units 11 and 19, and the development processing unit 17. It can be carried out instead.

【0034】本発明の基板処理装置は、上述のような円
形の基板Wに限らず、角形の基板を処理するものにも適
用できる。
The substrate processing apparatus of the present invention can be applied not only to the circular substrate W as described above but also to a rectangular substrate.

【0035】[0035]

【発明の効果】以上説明したように、請求項1に係る発
明の基板処理装置によれば、第1の処理ユニットと第2
の処理ユニットとの間の複数の基板処理部で基板を並行
処理し、各基板処理部での基板に対する処理時間が第2
の処理ユニットでの基板に対する処理時間よりも長い場
合でも、複数の基板処理部のうちから、適宜処理の終了
した基板を選択して取り出し、第2の処理ユニットにす
みやかに供給して処理させることができるから、第1の
処理ユニットと第2の処理ユニットとの間での基板の受
け渡しのための専用のインターフェースが不要で装置全
体を小型化できるとともに第2の処理ユニットを無駄無
く稼動して処理効率を向上できるようになった。
As described above, according to the substrate processing apparatus of the first aspect of the present invention, the first processing unit and the second processing unit are provided.
Substrates are processed in parallel by a plurality of substrate processing units between the other processing units, and the processing time for the substrates in each substrate processing unit is
Even when the processing time for the substrate in the processing unit is longer than the processing time, the substrate, which has been appropriately processed, is selected and taken out from the plurality of substrate processing units, and is promptly supplied to the second processing unit for processing. Therefore, a dedicated interface for transferring the substrate between the first processing unit and the second processing unit is not required, the entire apparatus can be downsized, and the second processing unit can be operated without waste. The processing efficiency can be improved.

【0036】また、請求項2に係る発明の基板処理装置
の構成によれば、第1および第2の処理ユニットそれぞ
れにおいて、第1および第2の処理ユニットの並設方向
に向かう第1および第2の基板搬送手段それぞれの水平
方向の移動経路を間にして、基板処理部どうしを振り分
けて互いに近接して配置するから、基板処理部を一直線
状に並設する場合に比べて装置全体をより一層コンパク
トに構成でき、更に、第1および第2の基板搬送手段そ
れぞれによる基板処理部間での基板の搬送距離を短くで
き、基板搬送に要する時間を短縮しやすくて処理効率を
も一層向上できるようになった。
According to the structure of the substrate processing apparatus of the second aspect of the present invention, in the first and second processing units, the first and second processing units are arranged in the direction in which the first and second processing units are arranged in parallel. Since the substrate processing units are distributed and arranged in close proximity to each other with the horizontal movement paths of the two substrate transporting units in between, the entire apparatus is more excellent than when the substrate processing units are arranged in a straight line. The substrate can be made more compact, and further, the substrate transfer distance between the substrate processing sections by the first and second substrate transfer means can be shortened, the time required for the substrate transfer can be shortened easily, and the processing efficiency can be further improved. It became so.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る基板処理装置の実施例を示す一部
破断斜視図である。
FIG. 1 is a partially cutaway perspective view showing an embodiment of a substrate processing apparatus according to the present invention.

【図2】(a)は全体平面図、(b)は全体概略縦断面
図である。
2A is an overall plan view, and FIG. 2B is an overall schematic vertical sectional view.

【図3】処理工程と処理時間との関係を示す図である。FIG. 3 is a diagram showing a relationship between processing steps and processing time.

【符号の説明】[Explanation of symbols]

2…第1の処理ユニット 3…第2の処理ユニット 7…第1の基板搬送手段 9…洗浄処理部 10…疎水化処理部 11…第1の冷却処理部 12…塗布処理部 13…第1の加熱処理部 14…エッジ露光処理部 15a…第2の加熱処理部 15b…第3の加熱処理部 16…第2の冷却処理部 17…現像処理部 18…第2の基板搬送手段 19…第3の冷却処理部 R…移動経路 W…基板 2 ... 1st processing unit 3 ... 2nd processing unit 7 ... 1st board | substrate conveyance means 9 ... Cleaning processing part 10 ... Hydrophobicization processing part 11 ... 1st cooling processing part 12 ... Coating processing part 13 ... 1st Heat treatment part 14 ... Edge exposure treatment part 15a ... Second heat treatment part 15b ... Third heat treatment part 16 ... Second cooling treatment part 17 ... Development treatment part 18 ... Second substrate transfer means 19 ... Cooling processing section 3 ... R ... moving path W ... substrate

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 水平方向に基板を搬送可能な第1の基板
搬送手段を有する第1の処理ユニットと、水平方向に前
記基板を搬送可能な第2の基板搬送手段を有する第2の
処理ユニットとの間に、前記第1および第2の基板搬送
手段の少なくとも一方によって前記基板を搬入するとと
もに他方によって前記基板を搬出する複数の並行処理用
の基板処理部を設けたことを特徴とする基板処理装置。
1. A first processing unit having a first substrate transfer means capable of horizontally transferring a substrate, and a second processing unit having a second substrate transfer means capable of horizontally transferring the substrate. And a plurality of substrate processing units for parallel processing for loading the substrate by at least one of the first and second substrate transfer means and unloading the substrate by the other. Processing equipment.
【請求項2】 請求項1に記載の第1の処理ユニットに
おいて、第1の基板搬送手段の第2の処理ユニットとの
並設方向に向かう水平方向の移動経路を挟んだ両側それ
ぞれに基板処理部を有し、かつ、第2の処理ユニットに
おいて、第2の基板搬送手段の前記第1の処理ユニット
との並設方向に向かう水平方向の移動経路を挟んだ両側
それぞれに基板処理部を有するものである基板処理装
置。
2. The first processing unit according to claim 1, wherein the substrate processing is performed on both sides of a horizontal movement path of the first substrate transfer means in a direction parallel to the second processing unit. And in the second processing unit, the substrate processing section is provided on each of both sides of the horizontal movement path of the second substrate transfer means in the direction parallel to the first processing unit. Substrate processing equipment that is one.
JP34515093A 1993-12-20 1993-12-20 Substrate treating device Pending JPH07171478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34515093A JPH07171478A (en) 1993-12-20 1993-12-20 Substrate treating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34515093A JPH07171478A (en) 1993-12-20 1993-12-20 Substrate treating device

Publications (1)

Publication Number Publication Date
JPH07171478A true JPH07171478A (en) 1995-07-11

Family

ID=18374623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34515093A Pending JPH07171478A (en) 1993-12-20 1993-12-20 Substrate treating device

Country Status (1)

Country Link
JP (1) JPH07171478A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145246A (en) * 1997-11-14 1999-05-28 Dainippon Screen Mfg Co Ltd Wafer processor
US6168667B1 (en) 1997-05-30 2001-01-02 Tokyo Electron Limited Resist-processing apparatus
SG105523A1 (en) * 2000-12-14 2004-08-27 Tokyo Electron Ltd Substrate processing system and substrate processing method
US6837632B2 (en) * 2002-08-23 2005-01-04 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus
US6893171B2 (en) 2002-05-01 2005-05-17 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus
JP2007305988A (en) * 1999-06-23 2007-11-22 Asml Us Inc Pre-positioning of robot in wafer processing system
US7379785B2 (en) 2002-11-28 2008-05-27 Tokyo Electron Limited Substrate processing system, coating/developing apparatus, and substrate processing apparatus
CN105289923A (en) * 2014-05-30 2016-02-03 盛美半导体设备(上海)有限公司 Wafer gumming machine and gumming method

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6168667B1 (en) 1997-05-30 2001-01-02 Tokyo Electron Limited Resist-processing apparatus
SG79977A1 (en) * 1997-05-30 2001-04-17 Tokyo Electron Ltd Resist-processing apparatus
JPH11145246A (en) * 1997-11-14 1999-05-28 Dainippon Screen Mfg Co Ltd Wafer processor
JP2007305988A (en) * 1999-06-23 2007-11-22 Asml Us Inc Pre-positioning of robot in wafer processing system
SG105523A1 (en) * 2000-12-14 2004-08-27 Tokyo Electron Ltd Substrate processing system and substrate processing method
US6834210B2 (en) 2000-12-14 2004-12-21 Tokyo Electron Limited Substrate processing system and substrate processing method
US6893171B2 (en) 2002-05-01 2005-05-17 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus
CN100413019C (en) * 2002-05-01 2008-08-20 日本网目版制造株式会社 Substrate treating apparatus
US6837632B2 (en) * 2002-08-23 2005-01-04 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus
US7379785B2 (en) 2002-11-28 2008-05-27 Tokyo Electron Limited Substrate processing system, coating/developing apparatus, and substrate processing apparatus
KR100935291B1 (en) * 2002-11-28 2010-01-06 도쿄엘렉트론가부시키가이샤 Wafer processing system and coating/developing apparatus
CN105289923A (en) * 2014-05-30 2016-02-03 盛美半导体设备(上海)有限公司 Wafer gumming machine and gumming method

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