JPH0690506B2 - Photo mask - Google Patents
Photo maskInfo
- Publication number
- JPH0690506B2 JPH0690506B2 JP20666585A JP20666585A JPH0690506B2 JP H0690506 B2 JPH0690506 B2 JP H0690506B2 JP 20666585 A JP20666585 A JP 20666585A JP 20666585 A JP20666585 A JP 20666585A JP H0690506 B2 JPH0690506 B2 JP H0690506B2
- Authority
- JP
- Japan
- Prior art keywords
- opening
- photomask
- light
- opening pattern
- shielding film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 この発明は縮小投影露光装置の原画として用いるホトマ
スクに関するものである。Description: FIELD OF THE INVENTION The present invention relates to a photomask used as an original image of a reduction projection exposure apparatus.
第４図は従来のホトマスクの一部を示す断面図である。
図において、１はガラス基板、３はガラス基板１上に設
けられたCr等からなる遮光膜、４は遮光膜３を部分的に
除去した開口パタンで、開口パタン４は孤立しており、
その寸法は縮小投影露光装置の解像限界に近い。FIG. 4 is a sectional view showing a part of a conventional photomask.
In the figure, 1 is a glass substrate, 3 is a light-shielding film made of Cr or the like provided on the glass substrate 1, 4 is an opening pattern obtained by partially removing the light-shielding film 3, and the opening pattern 4 is isolated.
Its size is close to the resolution limit of the reduction projection exposure apparatus.
このようなホトマスクを使用して、縮小投影露光装置に
よりウェハ上にパタンを転写する場合には、ホトマスク
上の振幅分布は第５図に示すようになるが、露光光学系
が高周波の空間周波数成分を伝達できないため、ウェハ
上の振幅分布は第６図に示すように横に広がりすぎた波
形となる。このため、ウェハ上に形成されるパタンの線
幅が太くなり、寸法精度が劣化する。When a pattern is transferred onto a wafer by a reduction projection exposure apparatus using such a photomask, the amplitude distribution on the photomask is as shown in FIG. 5, but the exposure optical system has a high spatial frequency component. Cannot be transmitted, the amplitude distribution on the wafer has a waveform that is too wide laterally, as shown in FIG. For this reason, the line width of the pattern formed on the wafer becomes large, and the dimensional accuracy deteriorates.
この発明は上述の問題点を解決するためになされたもの
で、解像限界に近い開口パタンを精度よく転写すること
ができるホトマスクを提供することを目的とする。The present invention has been made to solve the above problems, and an object thereof is to provide a photomask capable of accurately transferring an opening pattern close to the resolution limit.
この目的を達成するため、この発明においては、基板に
遮光膜を設け、該遮光膜を部分的に除去した開口部を有
するホトマスクにおいて、該開口部の周辺部分に微細な
第１と第２の開口パタンを設け、該第１と第２の開口パ
タンは入射光に対し解像限界以下の微細なパタンでか
つ、上記第１と第２の開口部を透過した光の位相が互い
に180度異なる如く形成する。In order to achieve this object, in the present invention, in a photomask having a light-shielding film on a substrate and having an opening in which the light-shielding film is partially removed, fine first and second fine masks are provided around the opening. An opening pattern is provided, and the first and second opening patterns are fine patterns below the resolution limit for incident light, and the phases of the light transmitted through the first and second openings differ from each other by 180 degrees. Formed as follows.
第１図（ａ）、（ｂ）はそれぞれこの発明に係るホトマ
スクの一部を示す断面図である。図において、5a〜5dは
開口パタン４の両側に設けられた微細な開口パタンで、
開口パタン5a〜5dの幅は単独では縮小投影露光装置によ
って解像しないような小さな値となっている。２は開口
パタン5b、5cに設けられた位相シフト層で、位相シフト
層２の厚さは開口パタン5b、5cを透過する光の位相を18
0°回転する値となっている。1 (a) and 1 (b) are sectional views showing a part of a photomask according to the present invention. In the figure, 5a to 5d are fine opening patterns provided on both sides of the opening pattern 4,
The widths of the opening patterns 5a to 5d are so small that they cannot be resolved by the reduction projection exposure apparatus alone. Reference numeral 2 denotes a phase shift layer provided on the opening patterns 5b and 5c, and the thickness of the phase shift layer 2 is set to a phase of light passing through the opening patterns 5b and 5c of 18
It is a value that rotates 0 °.
このようなホトマスクを使用してウェハ上にパタンを転
写する場合には、ホトマスク上の振幅分布は第２図に示
すようになる。すなわち、開口パタン４、5a、5dを透過
する光の位相と、開口パタン5b、5cを透過する光の位相
とは180°相違している。そして、露光光学系が高周波
の空間周波数成分を伝達できないため、ウェハ上の振幅
分布は第３図に示すようになる。すなわち、開口パタン
４を透過した光のみが大きく伝達され、開口パタン5b、
5cを透過した光自身はそれ程伝達されないが、開口パタ
ン5b、5cを透過した光は開口パタン４を透過した光の振
幅分布が必要以上に横に広がるのを防いでいる。When a pattern is transferred onto a wafer using such a photomask, the amplitude distribution on the photomask is as shown in FIG. That is, the phase of light passing through the opening patterns 4, 5a, 5d and the phase of light passing through the opening patterns 5b, 5c differ by 180 °. Since the exposure optical system cannot transmit a high frequency spatial frequency component, the amplitude distribution on the wafer is as shown in FIG. That is, only the light transmitted through the opening pattern 4 is largely transmitted, and the opening pattern 5b,
The light transmitted through 5c itself is not transmitted so much, but the light transmitted through the opening patterns 5b and 5c prevents the amplitude distribution of the light transmitted through the opening pattern 4 from spreading laterally more than necessary.
次に、露光波長λ＝365nm、縮小レンズの開口数NA＝0.4
である1/10縮小投影露光装置を用いた場合について説明
する。従来、この装置で解像できる孤立線のウェハ上の
最小線幅は約0.5μｍであった。そこで、第１図に示す
ホトマスクにおいて、開口パタン４と開口パタン5bとの
間隔、開口パタン４と開口パタン5cとの間隔、開口パタ
ン４と開口パタン5cとの間隔を６μｍ、開口パタン5aと
開口パタン5bとの間隔、開口パタン5cと開口パタン5dと
の間隔を4.5μｍ、開口パタン5a〜5dの幅を１μｍとし
た結果、開口パタン４の幅が３μｍすなわちウェハ上で
の幅が0.3μｍのパタンを解像することができた。Next, exposure wavelength λ = 365 nm, numerical aperture NA of reduction lens = 0.4
The case of using the 1/10 reduction projection exposure apparatus which is Conventionally, the minimum line width of an isolated line that can be resolved by this apparatus on the wafer is about 0.5 μm. Therefore, in the photomask shown in FIG. 1, the distance between the opening pattern 4 and the opening pattern 5b, the distance between the opening pattern 4 and the opening pattern 5c, the distance between the opening pattern 4 and the opening pattern 5c is 6 μm, and the distance between the opening pattern 5a and the opening pattern 5a is 5 μm. As a result of the distance between the pattern 5b, the distance between the opening pattern 5c and the opening pattern 5d being 4.5 μm and the width of the opening patterns 5a to 5d being 1 μm, the width of the opening pattern 4 was 3 μm, that is, the width on the wafer was 0.3 μm. I was able to resolve the pattern.
なお、上述実施例においては、開口パタン5b、5cに位相
シフト層２を設けたが、開口パタン４、5a、5dに位相シ
フト層を設けてもよい。Although the phase shift layer 2 is provided in the opening patterns 5b and 5c in the above embodiment, the phase shift layer may be provided in the opening patterns 4, 5a and 5d.
以上説明したように、この発明に係るホトマスクにおい
ては、解像限界に近い開口パタンを精度よく転写するこ
とが可能である。このように、この発明の効果は顕著で
ある。As described above, in the photomask according to the present invention, it is possible to accurately transfer the opening pattern close to the resolution limit. As described above, the effect of the present invention is remarkable.
第１図（ａ）、（ｂ）はそれぞれこの発明に係るホトマ
スクの一部を示す断面図、第２図は第１図に示したホト
マスク上の振幅分布を示すグラフ、第３図は第１図に示
したホトマスクを使用した場合のウェハ上の振幅分布を
示すグラフ、第４図は従来のホトマスクの一部を示す断
面図、第５図は第４図に示したホトマスク上の振幅分布
を示すグラフ、第６図は第４図に示したホトマスクを使
用した場合のウェハ上の振幅分布を示すグラフである。 １…ガラス基板、２…位相シフト層 ３…遮光膜、４…開口パタン 5a〜5d…開口パタン1 (a) and 1 (b) are sectional views showing a part of a photomask according to the present invention, FIG. 2 is a graph showing an amplitude distribution on the photomask shown in FIG. 1, and FIG. A graph showing the amplitude distribution on the wafer when the photomask shown in the figure is used, FIG. 4 is a cross-sectional view showing a part of a conventional photomask, and FIG. 5 is an amplitude distribution on the photomask shown in FIG. FIG. 6 is a graph showing the amplitude distribution on the wafer when the photomask shown in FIG. 4 is used. 1 ... Glass substrate, 2 ... Phase shift layer 3 ... Light-shielding film, 4 ... Opening pattern 5a-5d ... Opening pattern
Claims (4)
除去した開口部を有するホトマスクにおいて、 該開口部の周辺部分に微細な第１と第２の開口パタンを
有し、 該第１と第２の開口パタンは入射光に対し解像限界以下
の微細なパタンでかつ、上記第１と第２の開口部を透過
した光の位相が互いに180度異なる如く形成されたこと
を特徴とするホトマスク。1. A photomask having a light-shielding film formed on a substrate and having an opening in which the light-shielding film is partially removed, wherein a fine first and second opening pattern is provided in a peripheral portion of the opening. The first and second aperture patterns are fine patterns below the resolution limit with respect to the incident light, and are formed so that the phases of the light transmitted through the first and second apertures are different from each other by 180 degrees. A featured photomask.
おいて、 上記第１と第２の開口パタンの少なくともどちらか一方
に位相シフト層を設けたことを特徴とするホトマスク。2. The photomask according to claim 1, wherein a phase shift layer is provided on at least one of the first and second opening patterns.
おいて、 上記位相シフト層を上記基板と上記遮光膜の間に設けた
ことを特徴とするホトマスク。3. The photomask according to claim 2, wherein the phase shift layer is provided between the substrate and the light shielding film.
おいて、 上記位相シフト層は上記遮光膜上で、かつ上記基板と反
対側に形成されていることを特徴とするホトマスク。4. The photomask according to claim 2, wherein the phase shift layer is formed on the light shielding film and on the side opposite to the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20666585A JPH0690506B2 (en) | 1985-09-20 | 1985-09-20 | Photo mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20666585A JPH0690506B2 (en) | 1985-09-20 | 1985-09-20 | Photo mask |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16605396A Division JP2589060B2 (en) | 1996-06-26 | 1996-06-26 | Reduction projection exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6267514A JPS6267514A (en) | 1987-03-27 |
| JPH0690506B2 true JPH0690506B2 (en) | 1994-11-14 |
Family
ID=16527104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20666585A Expired - Fee Related JPH0690506B2 (en) | 1985-09-20 | 1985-09-20 | Photo mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0690506B2 (en) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2710967B2 (en) * | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | Manufacturing method of integrated circuit device |
| JP2786693B2 (en) * | 1989-10-02 | 1998-08-13 | 株式会社日立製作所 | Manufacturing method of mask |
| DE69028871T2 (en) * | 1989-04-28 | 1997-02-27 | Fujitsu Ltd | Mask, manufacturing process and pattern production with such a mask |
| JPH0329901A (en) * | 1989-06-27 | 1991-02-07 | Matsushita Electric Ind Co Ltd | Manufacture of grating |
| JP2519815B2 (en) * | 1990-03-01 | 1996-07-31 | 三菱電機株式会社 | Photomask and manufacturing method thereof |
| US5298365A (en) | 1990-03-20 | 1994-03-29 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| JPH0450943A (en) * | 1990-06-15 | 1992-02-19 | Mitsubishi Electric Corp | Mask pattern and its manufacture |
| JPH0833651B2 (en) * | 1990-07-05 | 1996-03-29 | 三菱電機株式会社 | Photo mask |
| US5279911A (en) * | 1990-07-23 | 1994-01-18 | Mitsubishi Denki Kabushiki Kaisha | Photomask |
| JP2587132B2 (en) * | 1990-11-09 | 1997-03-05 | 三菱電機株式会社 | Projection exposure equipment |
| JP2587133B2 (en) * | 1990-11-14 | 1997-03-05 | 三菱電機株式会社 | Projection exposure apparatus and semiconductor device exposed and manufactured by the apparatus |
| JPH04269750A (en) * | 1990-12-05 | 1992-09-25 | American Teleph & Telegr Co <Att> | Method for printing separating feature on photoresist layer |
| JPH04216548A (en) * | 1990-12-18 | 1992-08-06 | Mitsubishi Electric Corp | Photomask |
| JPH052152A (en) * | 1990-12-19 | 1993-01-08 | Hitachi Ltd | Method and device for light beam generation, method for size measurement, outward shape inspection, height measurement, and exposure using same, and manufacture of semiconductor integrated circuit device |
| US5414746A (en) * | 1991-04-22 | 1995-05-09 | Nippon Telegraph & Telephone | X-ray exposure mask and fabrication method thereof |
| JP3120474B2 (en) * | 1991-06-10 | 2000-12-25 | 株式会社日立製作所 | Method for manufacturing semiconductor integrated circuit device |
| JPH04368947A (en) * | 1991-06-18 | 1992-12-21 | Mitsubishi Electric Corp | Formation of phase shift mask |
| JP3179520B2 (en) * | 1991-07-11 | 2001-06-25 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
| US5246800A (en) * | 1991-09-12 | 1993-09-21 | Etec Systems, Inc. | Discrete phase shift mask writing |
| US5691115A (en) * | 1992-06-10 | 1997-11-25 | Hitachi, Ltd. | Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices |
| JP3328323B2 (en) * | 1992-07-20 | 2002-09-24 | 株式会社日立製作所 | Method for manufacturing phase shift mask and method for manufacturing semiconductor integrated circuit device |
| JP3279758B2 (en) * | 1992-12-18 | 2002-04-30 | 株式会社日立製作所 | Method for manufacturing semiconductor integrated circuit device |
| US5418095A (en) * | 1993-01-21 | 1995-05-23 | Sematech, Inc. | Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process |
| US5411824A (en) * | 1993-01-21 | 1995-05-02 | Sematech, Inc. | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging |
| AU5681194A (en) * | 1993-01-21 | 1994-08-15 | Sematech, Inc. | Phase shifting mask structure with multilayer optical coating for improved transmission |
| KR950034472A (en) * | 1994-04-06 | 1995-12-28 | 가나이 쓰토무 | Pattern forming method and projection exposure apparatus used therein |
| JPH08297359A (en) * | 1995-02-27 | 1996-11-12 | Hitachi Ltd | Production of phase shift mask and production of semiconductor integrated circuit device |
| JP3080024B2 (en) * | 1997-02-20 | 2000-08-21 | 日本電気株式会社 | Exposure method and method of measuring spherical aberration |
| WO2000036466A1 (en) * | 1998-12-11 | 2000-06-22 | Hitachi, Ltd. | Semiconductor integrated circuit device and method of manufacturing the same |
| JP2000206671A (en) | 1999-01-13 | 2000-07-28 | Mitsubishi Electric Corp | Photomask, its production and production of semiconductor integrated circuit device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6250811A (en) * | 1985-08-26 | 1987-03-05 | イ−ストマン コダック カンパニ− | Method and apparatus for shaping and deflecting electromagnetic beam in anamorphic fashion |
-
1985
- 1985-09-20 JP JP20666585A patent/JPH0690506B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6250811A (en) * | 1985-08-26 | 1987-03-05 | イ−ストマン コダック カンパニ− | Method and apparatus for shaping and deflecting electromagnetic beam in anamorphic fashion |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6267514A (en) | 1987-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0690506B2 (en) | Photo mask | |
| JPH0690505B2 (en) | Photo mask | |
| US5245470A (en) | Polarizing exposure apparatus using a polarizer and method for fabrication of a polarizing mask by using a polarizing exposure apparatus | |
| JP3411613B2 (en) | Halftone phase shift mask | |
| JPS6259296B2 (en) | ||
| JP2564337B2 (en) | Mask and pattern transfer method and semiconductor integrated circuit manufacturing method | |
| JPS58200238A (en) | Photomask | |
| JPH0690504B2 (en) | Photomask manufacturing method | |
| JP2889047B2 (en) | Method of manufacturing reflection type photo mask, reflection type photo mask, and method of exposing semiconductor substrate using the same | |
| JPH03252659A (en) | Photomask | |
| JP3283624B2 (en) | Photo mask | |
| KR100280035B1 (en) | Phase Shift Photomask | |
| JPH05165194A (en) | Photomask | |
| JP2589060B2 (en) | Reduction projection exposure method | |
| JP3110855B2 (en) | Method of manufacturing projection exposure substrate and pattern forming method using this substrate | |
| JPH0833651B2 (en) | Photo mask | |
| KR0151228B1 (en) | Photomask for preparing resist pattern | |
| JPH0812416B2 (en) | mask | |
| JPH05142751A (en) | Photomask and projection exposure method | |
| JP3031728B2 (en) | Reticle and exposure equipment | |
| JPH0772614A (en) | Phase shift photomask | |
| JPH04175746A (en) | Mask, manufacture thereof and image forming method using it | |
| WO1998002782A1 (en) | Sidelobe suppressing attenuated phase-shifting mask | |
| JPH0547624A (en) | Exposure apparatus | |
| JP2791757B2 (en) | Semiconductor mask and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |