JPH065928A - Resin-sealed electronic component - Google Patents

Resin-sealed electronic component

Info

Publication number
JPH065928A
JPH065928A JP4184404A JP18440492A JPH065928A JP H065928 A JPH065928 A JP H065928A JP 4184404 A JP4184404 A JP 4184404A JP 18440492 A JP18440492 A JP 18440492A JP H065928 A JPH065928 A JP H065928A
Authority
JP
Japan
Prior art keywords
resin
light emitting
emitting diode
metal wire
diode element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4184404A
Other languages
Japanese (ja)
Other versions
JP3183715B2 (en
Inventor
Kazuyoshi Tsuji
和義 辻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP18440492A priority Critical patent/JP3183715B2/en
Publication of JPH065928A publication Critical patent/JPH065928A/en
Application granted granted Critical
Publication of JP3183715B2 publication Critical patent/JP3183715B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

PURPOSE:To provide the resin-sealed electronic component, sufficiently satisfying reliability on the product and the property of resin demanded in a manufacturing process and low in manufacturing cost. CONSTITUTION:As to a light emitting diode device 30, firstly the first resin 31 for protecting a light emitting diode element 4 or the like from a temperature cycle or the like covers the light emitting diode element 4 and a metal wire 6 in the state where the light emitting diode element 4 is die-bonded with a recessed part 3 formed on a die pad 2 at the tip part of a lead terminal 1 is connected to the tip part of a lead terminal 5. Further, the second resin 32 for protecting the light emitting diode element 4 from moisture covers the first resin 31 and the third resin 33 having the good molding property covers said second resin 32 so as to form a package body. Accordingly, the reliability on the products and the requirements in the manufacturing process are satisfied in the respective resin layers thus enabling a large quantity of the cheap resin 33 to be used so as to reduce the manufacturing cost.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、例えば発光ダイオード
装置や半導体集積回路等の電子部品のように内部素子
と、内部素子とリード端子とを接続する金属線とが樹脂
で封止された樹脂封止型電子部品に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin in which an internal element and a metal wire connecting the internal element and a lead terminal are sealed with a resin such as an electronic component such as a light emitting diode device or a semiconductor integrated circuit. The present invention relates to a sealed electronic component.

【0002】[0002]

【従来の技術】従来のこの種の樹脂封止型電子部品の構
成を発光ダイオード装置を例に採って図4、図5に示し
説明する。図4に示す発光ダイオード装置10は、リー
ド端子1の先端部のダイパッド2に形成された凹部3に
発光ダイオード素子4がダイボンディングされ、その発
光ダイオード素子4と、リード端子5の先端部7とが金
線等の金属線6で接続され、その発光ダイオード素子4
と金属線6とが樹脂11によって封止された構成であ
る。この樹脂11は、温度サイクルやハンダ付け時の熱
等から発光ダイオード素子4や金属線6の接続部等を保
護し、製品の信頼性を高めるために、例えば、ガラス転
移温度(Tg値)が115〜117°程度で安定してい
るエポキシ樹脂等が用いられ、また、その成形は、一般
に注型法によって行なわれている。
2. Description of the Related Art A conventional resin-sealed electronic component of this type will be described with reference to FIGS. 4 and 5 by taking a light emitting diode device as an example. In the light emitting diode device 10 shown in FIG. 4, the light emitting diode element 4 is die-bonded to the recess 3 formed in the die pad 2 at the tip portion of the lead terminal 1, and the light emitting diode element 4 and the tip portion 7 of the lead terminal 5 are connected. Are connected by a metal wire 6 such as a gold wire, and the light emitting diode element 4
The metal wire 6 and the metal wire 6 are sealed with the resin 11. This resin 11 has a glass transition temperature (Tg value) of, for example, a glass transition temperature (Tg value) in order to protect the connection portion of the light emitting diode element 4 and the metal wire 6 from heat cycle and heat during soldering and to improve the reliability of the product. Epoxy resin or the like which is stable at about 115 to 117 ° is used, and its molding is generally performed by a casting method.

【0003】また、図5に示す発光ダイオード装置20
は、リード端子1の先端部のダイパッド2に形成された
凹部3にダイボンディングされた発光ダイオード素子4
とリード端子5の先端部7とが金属線6で接続された状
態で、まず、凹部3内の発光ダイオード素子4が樹脂2
1によってコーティングされ、次に、その発光ダイオー
ド素子4と金属線6とが樹脂22によって封止された構
成である。樹脂21は発光ダイオード素子4を湿気から
保護し、また、熱サイクルが加わったときに樹脂22が
伸縮することによる外部応力から発光ダイオード素子4
を保護するために、例えば、シリコーン樹脂等が用いら
れている。
Further, the light emitting diode device 20 shown in FIG.
Is the light emitting diode element 4 die-bonded to the recess 3 formed in the die pad 2 at the tip of the lead terminal 1.
First, the light emitting diode element 4 in the recess 3 is made of the resin 2 while the metal wire 6 is connected to the tip portion 7 of the lead terminal 5.
1 is coated, and then the light emitting diode element 4 and the metal wire 6 are sealed with resin 22. The resin 21 protects the light emitting diode element 4 from moisture, and the light emitting diode element 4 is protected from external stress due to expansion and contraction of the resin 22 when a heat cycle is applied.
For example, a silicone resin or the like is used to protect the.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、このよ
うな構成を有する従来例の場合には、次のような問題が
ある。すなわち、従来の発光ダイオード装置10、20
に用いられている樹脂11や22は、外的環境や汚染等
から発光ダイオード素子4や金属線6の接続部等を保護
し、製品の信頼性を高めるために、所定の特性を有する
樹脂が用いられているが、このような樹脂は高価であ
り、従って製品の製造コストが高くなるという問題があ
る。また、これらの樹脂はあらゆる特性を兼ね備えてい
るわけではなく、上記の樹脂11、22においては、例
えば、注型法による樹脂成形時に型に流し込み、熱硬化
された樹脂と型とが離れ難い等、樹脂の成形特性に問題
がある等、製品の信頼性や製造工程の作業効率向上のた
めに要求される樹脂の特性を充分に満足させることがで
きないという問題もある。
However, the conventional example having such a structure has the following problems. That is, the conventional light emitting diode devices 10 and 20
The resin 11 or 22 used for the resin is a resin having predetermined characteristics in order to protect the connection portion of the light emitting diode element 4 and the metal wire 6 from the external environment and pollution and to enhance the reliability of the product. Although used, such a resin has a problem that it is expensive and therefore the manufacturing cost of the product is high. Further, these resins do not have all the characteristics, and in the above-mentioned resins 11 and 22, for example, it is difficult to separate the thermoset resin from the mold by pouring into the mold during resin molding by the casting method. However, there is also a problem in that the characteristics of the resin required for improving the reliability of the product and the work efficiency of the manufacturing process cannot be sufficiently satisfied, such as a problem in the molding characteristics of the resin.

【0005】本発明は、このような事情に鑑みてなされ
たものであって、製品の信頼性や製造工程の作業効率向
上のために要求される樹脂の特性を充分満足させ、しか
も製造コストが安価な樹脂封止型電子部品を提供するこ
とを目的とする。
The present invention has been made in view of such circumstances, and sufficiently satisfies the characteristics of the resin required for improving the reliability of the product and the working efficiency of the manufacturing process, and further, the manufacturing cost is reduced. An object is to provide an inexpensive resin-sealed electronic component.

【0006】[0006]

【課題を解決するための手段】本発明は、このような目
的を達成するために、次のような構成をとる。すなわ
ち、本発明は、内部素子と、前記内部素子とリード端子
とを接続する金属線とが樹脂封止された電子部品におい
て、前記内部素子と前記金属線とを被う第一樹脂層と、
前記第一樹脂層を被う第二樹脂層と、前記第二樹脂層を
被ってパッケージ本体を形作る第三樹脂層と、を備え、
前記第一樹脂層は、前記各樹脂層の中で最もガラス転移
温度の安定した樹脂であり、前記第二樹脂層は、前記各
樹脂層の中で最も吸湿性の小さい樹脂であり、前記第三
樹脂層は、前記各樹脂層の中で最も成形特性の良い樹脂
を用いるものである。
The present invention has the following constitution in order to achieve such an object. That is, the present invention is an electronic component in which an internal element and a metal wire connecting the internal element and a lead terminal are resin-sealed, and a first resin layer covering the internal element and the metal wire,
A second resin layer covering the first resin layer, and a third resin layer covering the second resin layer to form a package body,
The first resin layer is a resin having the most stable glass transition temperature among the resin layers, and the second resin layer is a resin having the smallest hygroscopicity among the resin layers. The three resin layers use the resin having the best molding characteristics among the resin layers.

【0007】[0007]

【作用】本発明の作用は次のとおりである。内部素子
と、その内部素子とリード端子とを接続する金属線と
を、ガラス転移温度の安定した第一樹脂層で被うことに
より、温度サイクルやハンダ付け時の熱等から内部素子
や金属線の接続部等を保護し、次に、その第一樹脂層
を、吸湿性の小さい第二樹脂層で被うことにより、第一
樹脂層で被われた内部素子と金属線とを湿気から保護
し、もって製品の信頼性の向上が図れ、さらに、その第
二樹脂層を、成形特性の良い第三樹脂層で被ってパッケ
ージ本体を形作ることにより、樹脂成形工程における作
業効率の向上が図れる。すなわち、製品の信頼性や製造
工程の作業効率向上のために要求される樹脂の特性を各
樹脂層で実現することができる。
The operation of the present invention is as follows. By covering the internal element and the metal wire connecting the internal element and the lead terminal with the first resin layer having a stable glass transition temperature, the internal element and the metal wire are prevented from the heat during the temperature cycle or soldering. To protect the internal elements covered with the first resin layer and the metal wire from moisture by protecting the connection part and the like, and then covering the first resin layer with the second resin layer having a low hygroscopic property. Therefore, the reliability of the product can be improved, and further, by forming the package body by covering the second resin layer with the third resin layer having good molding characteristics, the work efficiency in the resin molding process can be improved. That is, each resin layer can realize the characteristics of the resin required for improving the reliability of the product and the work efficiency of the manufacturing process.

【0008】[0008]

【実施例】以下、図面を参照して本発明の一実施例を説
明する。本発明の一実施例に係る発光ダイオード装置の
構成を図1に示し説明する。この発光ダイオード装置3
0は、リード端子1の先端部のダイパッド2に形成され
た凹部3にダイボンディングされた発光ダイオード素子
4とリード端子5の先端部7とが金属線6で接続された
状態で、まず、第一樹脂31が発光ダイオード素子4と
金属線6とを被い、次に、第二樹脂32が発光ダイオー
ド素子4と金属線6とを被った第一樹脂31を被い、さ
らに、第三樹脂33がその第二樹脂32を被ってパッケ
ージ本体を形作るようにして、発光ダイオード素子4と
金属線6とが封止された構成である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. A configuration of a light emitting diode device according to an embodiment of the present invention will be described with reference to FIG. This light emitting diode device 3
0 is a state in which the light emitting diode element 4 die-bonded to the recess 3 formed in the die pad 2 at the tip of the lead terminal 1 and the tip 7 of the lead terminal 5 are connected by the metal wire 6. One resin 31 covers the light emitting diode element 4 and the metal wire 6, then a second resin 32 covers the first resin 31 covering the light emitting diode element 4 and the metal wire 6, and further a third resin. In this structure, the light emitting diode element 4 and the metal wire 6 are sealed so that 33 covers the second resin 32 to form the package body.

【0009】この第一樹脂31は、温度サイクルやハン
ダ付け時の熱等から発光ダイオード素子4や金属線6の
接続部等を保護し、製品の信頼性を高めるために、例え
ば、Tg値が安定している高純度のエポキシ樹脂等が用
いられる。ここに、Tg値が安定しているとは、後述す
る第一樹脂31の熱硬化時の条件等に影響されず、硬化
したときの第一樹脂31のTg値がおおよそ115〜1
17°程度で一定していることをいう。なお、このTg
値の範囲より高過ぎると、ハンダ付け時の加熱や、製品
試験における温度サイクル等において樹脂が膨張、収縮
してクラック(ひび割れ)が生じ、金属線6の断線や発
光ダイオード素子4の損傷が発生し、一方、低過ぎる
と、ハンダ付け時の加熱等によって樹脂が軟化し、その
樹脂に封止され、固定されているリード端子1、5がぐ
らつくことによって、金属線6の接続部での断線が発生
するので、いずれも好ましくない。
The first resin 31 protects the connection parts of the light emitting diode element 4 and the metal wire 6 from heat during heat cycle and soldering, and enhances the reliability of the product. A stable high-purity epoxy resin or the like is used. Here, the Tg value being stable means that the Tg value of the first resin 31 when cured is approximately 115 to 1 without being affected by the conditions at the time of thermosetting of the first resin 31 described later.
It is constant at about 17 °. This Tg
If the value is higher than the value range, the resin expands and contracts due to heating during soldering, temperature cycle in product testing, etc., and cracks occur, causing breakage of the metal wire 6 and damage to the light emitting diode element 4. On the other hand, if it is too low, the resin softens due to heating at the time of soldering, etc., and the lead terminals 1 and 5 sealed and fixed by the resin wobble, causing disconnection at the connection portion of the metal wire 6. However, both are not preferable.

【0010】また、第二樹脂32は発光ダイオード素子
4を湿気から保護し、製品の信頼性を高めるために、例
えば、シリコーン樹脂等が用いられる。
The second resin 32 is made of, for example, a silicone resin in order to protect the light emitting diode element 4 from moisture and enhance the reliability of the product.

【0011】さらに、第三樹脂33は、第一樹脂31、
第二樹脂32によって被われた発光ダイオード素子4と
金属線6とを封止し、パッケージ本体を形作るので、成
形特性が良い、例えば、ポリカーボネートやアクリル酸
樹脂、あるいは、成形特性の良いエポキシ樹脂等が用い
られる。なお、上述のように発光ダイオード素子4と金
属線6とは第一樹脂31および第二樹脂32で被われて
いるので、第三樹脂33としてはTg値の安定性や吸湿
性等をそれほど考慮する必要がなく、成形特性だけを考
慮すればよいので、比較的安価な樹脂を用いることがで
きる。
Further, the third resin 33 is the first resin 31,
Since the light emitting diode element 4 covered with the second resin 32 and the metal wire 6 are sealed to form the package body, the molding characteristics are good, for example, polycarbonate, acrylic acid resin, or epoxy resin having good molding characteristics. Is used. Since the light emitting diode element 4 and the metal wire 6 are covered with the first resin 31 and the second resin 32 as described above, the stability of the Tg value, the hygroscopicity, etc. are considered so much as the third resin 33. Since it is not necessary to do so and only the molding characteristics need to be considered, a relatively inexpensive resin can be used.

【0012】次に、この発光ダイオード装置30の製造
過程の一例を図2を参照して説明する。まず、図2
(a)に示すような、樹脂封止前の発光ダイオード装置
を従来と同様の方法で製造する。すなわち、リード端子
1の先端部のダイパッド2に形成された凹部3に発光ダ
イオード素子4をダイボンディングし、さらに、その発
光ダイオード素子4とリード端子5の先端部7とをワイ
ヤーボンディングによって金属線6で接続する。
Next, an example of the manufacturing process of the light emitting diode device 30 will be described with reference to FIG. First, FIG.
A light emitting diode device before resin sealing as shown in (a) is manufactured by a method similar to the conventional method. That is, the LED element 4 is die-bonded to the recess 3 formed in the die pad 2 at the tip of the lead terminal 1, and the LED element 4 and the tip 7 of the lead terminal 5 are wire-bonded to form the metal wire 6. Connect with.

【0013】次に、この樹脂封止前の発光ダイオード装
置の発光ダイオード素子4と金属線6とを第一樹脂層で
被うために、図2(b)に示すように、溶融した第一樹
脂31が入れられた第一樹脂槽41に、発光ダイオード
素子4と金属線6とを浸けて、引き上げる。このとき、
発光ダイオード素子4と金属線6との周りには、第一樹
脂31の表面張力により第一樹脂31の層が形成され
る。この状態で、第一樹脂31を熱硬化させる。
Next, in order to cover the light emitting diode element 4 and the metal wire 6 of this light emitting diode device before resin sealing with the first resin layer, as shown in FIG. The light emitting diode element 4 and the metal wire 6 are dipped and pulled up in the first resin tank 41 containing the resin 31. At this time,
A layer of the first resin 31 is formed around the light emitting diode element 4 and the metal wire 6 by the surface tension of the first resin 31. In this state, the first resin 31 is thermoset.

【0014】次に、図2(b)で製造された第一樹脂3
1の層の周りを第二樹脂層で被うために、図2(c)に
示すように、溶融した第二樹脂32が入れられた第二樹
脂槽42に、第一樹脂31に被われた発光ダイオード素
子4と金属線6とを浸けて、引き上げる。このとき、第
一樹脂31の層の周りには、第二樹脂32が被着して第
二樹脂32の層が形成される。この状態で、第二樹脂3
2を熱硬化させる。
Next, the first resin 3 produced in FIG. 2 (b)
In order to cover the circumference of layer 1 with the second resin layer, as shown in FIG. 2C, the second resin tank 42 containing the molten second resin 32 is covered with the first resin 31. The light emitting diode element 4 and the metal wire 6 are dipped and pulled up. At this time, the second resin 32 is deposited around the layer of the first resin 31 to form a layer of the second resin 32. In this state, the second resin 3
2. Heat cure 2.

【0015】最後に、図2(d)に示すように、注型法
により第三樹脂33でパッケージ本体を形成する。すな
わち、第三樹脂33が注入されたパッケージ本体成形用
の型43に、第一樹脂31と第二樹脂32とで被われた
発光ダイオード素子4と金属線6とを挿入し、第三樹脂
33を熱硬化させることにより発光ダイオード装置30
が製造される。
Finally, as shown in FIG. 2D, the package body is formed from the third resin 33 by the casting method. That is, the light emitting diode element 4 covered with the first resin 31 and the second resin 32 and the metal wire 6 are inserted into the mold 43 for molding the package body into which the third resin 33 is injected, and the third resin 33 is inserted. By heat curing the light emitting diode device 30
Is manufactured.

【0016】なお、上述した製造工程は一例を示すもの
であり、発光ダイオード装置30の各樹脂層を別の方法
により形成してもよい。
The above-described manufacturing process is an example, and each resin layer of the light emitting diode device 30 may be formed by another method.

【0017】次に、本発明をDIP(Dual In-Line Pac
kage)タイプの半導体装置に適用した場合について図3
を参照して説明する。この半導体装置50は、ダイパッ
ド51にダイボンディングされた半導体素子52とリー
ド端子53の先端部54とが金属線55で接続された状
態で、半導体素子52と金属線55とを第一樹脂61で
被い、その第一樹脂61の周りを第二樹脂62で被い、
さらに、第二樹脂62の周りを第三樹脂63で被ってパ
ッケージ本体を形成する構成である。上述した発光ダイ
オード装置30に用いたような各樹脂31〜33は透光
性を有する必要があるが、これらの各樹脂61〜63
は、非透光性であってもよい。パッケージ本体を成形す
る際、半導体素子52および金属線55は第一樹脂61
および第二樹脂で被われているので、生産性を上げるた
めに成形条件(樹脂注入圧力や速度等)を過酷に設定し
ても、半導体素子52や金属線55に悪影響を与えるこ
とはない。
Next, the present invention is applied to a DIP (Dual In-Line Pac).
kage) type semiconductor device
Will be described with reference to. In the semiconductor device 50, the semiconductor element 52 die-bonded to the die pad 51 and the tip portion 54 of the lead terminal 53 are connected by the metal wire 55, and the semiconductor element 52 and the metal wire 55 are connected by the first resin 61. The second resin 62 covers the first resin 61,
Further, the package is formed by covering the second resin 62 with the third resin 63. Each of the resins 31 to 33 used in the above-described light emitting diode device 30 needs to have a light-transmitting property.
May be non-translucent. When the package body is molded, the semiconductor element 52 and the metal wire 55 are removed from the first resin 61.
Since it is covered with the second resin, even if the molding conditions (resin injection pressure, speed, etc.) are set severely in order to improve productivity, the semiconductor element 52 and the metal wire 55 are not adversely affected.

【0018】なお、本発明は上述の発光ダイオード装置
やDIPタイプの半導体装置に限定されず、樹脂封止型
の各種の電子部品に適用することができる。
The present invention is not limited to the light emitting diode device and the DIP type semiconductor device described above, but can be applied to various resin-sealed electronic parts.

【0019】[0019]

【発明の効果】以上の説明から明らかなように、本発明
によれば、内部素子と、その内部素子とリード端子とを
接続する金属線とを、ガラス転移温度の安定した第一樹
脂層で被うことにより、温度サイクルやハンダ付け時の
熱等から内部素子や金属線の接続部等を保護し、次に、
その第一樹脂層を、吸湿性の小さい第二樹脂層で被うこ
とにより、第一樹脂層で被われた内部素子と金属線とを
湿気から保護し、もって製品の信頼性の向上が図れ、さ
らに、その第二樹脂層を、成形特性の良い第三樹脂層で
被ってパッケージ本体を形作ることにより、樹脂成形工
程の作業効率の向上が図れる。すなわち、製品の信頼性
や製造工程の作業効率向上のために要求される樹脂の特
性を各樹脂層で実現することができる。また、温度サイ
クルやハンダ付け時の熱等から内部素子や金属線の接続
部等を保護するための高信頼性の高価な第一樹脂層は、
内部素子や金属線の周りだけに使用し、湿気から内部素
子を保護するための比較的高価な第二樹脂層も、第一樹
脂層の周りだけに使用しており、パッケージ本体を形成
するために前記第一、第二樹脂層よりも多量に使用され
る第三樹脂層としては、比較的安価なものを選択できる
ので、全体として樹脂のコストの低減が図れ、製造コス
トを下げることができる。
As is apparent from the above description, according to the present invention, the internal element and the metal wire connecting the internal element and the lead terminal are made of the first resin layer having a stable glass transition temperature. By covering it, it protects internal elements and metal wire connections from temperature cycling and heat during soldering.
By covering the first resin layer with a second resin layer having low hygroscopicity, the internal element covered with the first resin layer and the metal wire are protected from moisture, and thus the reliability of the product can be improved. Further, by covering the second resin layer with the third resin layer having good molding characteristics to form the package body, the work efficiency of the resin molding process can be improved. That is, each resin layer can realize the characteristics of the resin required for improving the reliability of the product and the work efficiency of the manufacturing process. Further, the highly reliable and expensive first resin layer for protecting the internal elements and the connection portion of the metal wire from the heat at the time of temperature cycling and soldering,
It is used only around the internal elements and metal wires, and the relatively expensive second resin layer for protecting the internal elements from moisture is also used only around the first resin layer to form the package body. As the third resin layer used in a larger amount than the first and second resin layers, a relatively inexpensive one can be selected, so that the cost of the resin as a whole can be reduced and the manufacturing cost can be reduced. ..

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例に係る発光ダイオード装置の
構成を示す断面図である。
FIG. 1 is a cross-sectional view showing a configuration of a light emitting diode device according to an embodiment of the present invention.

【図2】実施例装置の製造工程を説明するための図であ
る。
FIG. 2 is a drawing for explaining the manufacturing process of the device of the embodiment.

【図3】本発明の別の実施例に係るDIPタイプの半導
体装置の構成を示す断面図である。
FIG. 3 is a sectional view showing a configuration of a DIP type semiconductor device according to another embodiment of the present invention.

【図4】従来例に係る発光ダイオード装置の構成を示す
断面図である。
FIG. 4 is a cross-sectional view showing a configuration of a light emitting diode device according to a conventional example.

【図5】従来例に係る発光ダイオード装置の構成を示す
断面図である。
FIG. 5 is a cross-sectional view showing a configuration of a light emitting diode device according to a conventional example.

【符号の説明】[Explanation of symbols]

1、5 … リード端子 2 … ダイパッド 3 … 凹部 4 … 発光ダイオード素子 6 … 金属線 30 … 発光ダイオード装置 31 … 第一樹脂 32 … 第二樹脂 33 … 第三樹脂 50 … DIP(Dual In-Line Package)タイプの半
導体装置
1, 5 ... Lead terminal 2 ... Die pad 3 ... Recess 4 ... Light emitting diode element 6 ... Metal wire 30 ... Light emitting diode device 31 ... First resin 32 ... Second resin 33 ... Third resin 50 ... DIP (Dual In-Line Package) ) Type semiconductor device

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 内部素子と、前記内部素子とリード端子
とを接続する金属線とが樹脂封止された電子部品におい
て、 前記内部素子と前記金属線とを被う第一樹脂層と、 前記第一樹脂層を被う第二樹脂層と、 前記第二樹脂層を被ってパッケージ本体を形作る第三樹
脂層と、 を備え、 前記第一樹脂層は、前記各樹脂層の中で最もガラス転移
温度の安定した樹脂であり、 前記第二樹脂層は、前記各樹脂層の中で最も吸湿性の小
さい樹脂であり、 前記第三樹脂層は、前記各樹脂層の中で最も成形特性の
良い樹脂であることを特徴とする樹脂封止型電子部品。
1. An electronic component in which an internal element and a metal wire connecting the internal element and a lead terminal are resin-sealed, a first resin layer covering the internal element and the metal wire, A second resin layer covering the first resin layer; and a third resin layer covering the second resin layer to form a package body, the first resin layer being the most glass of the resin layers. A resin having a stable transition temperature, the second resin layer is a resin having the smallest hygroscopicity among the resin layers, and the third resin layer has the most molding characteristics among the resin layers. A resin-sealed electronic component characterized by being a good resin.
JP18440492A 1992-06-18 1992-06-18 Resin-sealed optical element Expired - Fee Related JP3183715B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18440492A JP3183715B2 (en) 1992-06-18 1992-06-18 Resin-sealed optical element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18440492A JP3183715B2 (en) 1992-06-18 1992-06-18 Resin-sealed optical element

Publications (2)

Publication Number Publication Date
JPH065928A true JPH065928A (en) 1994-01-14
JP3183715B2 JP3183715B2 (en) 2001-07-09

Family

ID=16152579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18440492A Expired - Fee Related JP3183715B2 (en) 1992-06-18 1992-06-18 Resin-sealed optical element

Country Status (1)

Country Link
JP (1) JP3183715B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001217463A (en) * 2000-01-31 2001-08-10 Sanyo Electric Co Ltd Light-emitting device and its manufacturing method
JP2004088004A (en) * 2002-08-29 2004-03-18 Okaya Electric Ind Co Ltd Light emitting diode
JP2007214252A (en) * 2006-02-08 2007-08-23 Fuji Xerox Co Ltd Semiconductor laser device
JP2012089864A (en) * 2004-04-06 2012-05-10 Cree Inc Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001217463A (en) * 2000-01-31 2001-08-10 Sanyo Electric Co Ltd Light-emitting device and its manufacturing method
JP2004088004A (en) * 2002-08-29 2004-03-18 Okaya Electric Ind Co Ltd Light emitting diode
JP2012089864A (en) * 2004-04-06 2012-05-10 Cree Inc Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
US8946755B2 (en) 2004-04-06 2015-02-03 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
JP2007214252A (en) * 2006-02-08 2007-08-23 Fuji Xerox Co Ltd Semiconductor laser device

Also Published As

Publication number Publication date
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