JPH065559A - Ozone plasma treatment - Google Patents

Abstract

PURPOSE:To provide a method which enables oxidation treatment at a low temperature and removes an organic photoresist film armd an organic contaminant further effectively. CONSTITUTION:(1): High frequency is applied to ozone gas from an ozone generator, ozone plasma gas is generated, a sample is exposed to ozone plasma gas, a sample surface is oxidized or an organic photoresist film and organic contaminant are oxidized and removed. (2): High frequency is applied to oxygen gas or ozone gas for plasma gas formation and ultraviolet ray is applied while exposing a sample to plasma gas of oxygen gas or ozone gas to oxidize a sample surface or an organic photoresist film and organic contaminant are oxidized and removed. Thereby, low temperature oxidation at 300 deg. or lower becomes possible and even a polymerized organic photoresist film and organic contaminant can be effectively removed completely.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an oxidation treatment method or an oxidation removal treatment method for an organic photoresist film or an organic contaminant.

[0002]

2. Description of the Related Art Conventionally, a method of heating a sample to oxidize it in an oxygen gas atmosphere has been most commonly used as an oxidizing treatment, and other methods of oxidizing in an oxygen plasma atmosphere or in an ozone atmosphere. (Iwamatsu et al., “Characteristics of Ozone Oxide Film”, 51st Annual Meeting of the Applied Physics Society of Japan, Lecture Proceedings, p. 626 (1990)) was used. Further, conventionally, as a method for oxidizing and removing an organic photoresist film and an organic contaminant, a method of exposing to an oxygen plasma gas, a method of immersing in an ozone sulfuric acid, a hydrogen peroxide sulfuric acid, or a benzenesulfonic acid solution has been used.

[0003]

However, according to the above-mentioned prior art, there are problems that the oxidation temperature is required to be 300 ° C. or higher, the organic photoresist film and the organic pollutants cannot be completely removed. . The present invention solves the problems of the prior art, and can perform oxidation treatment even at a lower temperature, and more efficiently removes an organic photoresist film and organic pollutants,
The purpose is to provide a new method.

[0004]

In order to solve the above problems and achieve the above objects, the present invention relates to ozone plasma treatment. (1) A high frequency is applied to ozone gas from an ozone generator to generate ozone plasma gas. Generated and exposed the sample to the ozone plasma gas to oxidize the sample surface, or to oxidize and remove the organic photoresist film and organic contaminants, and (2) apply high frequency to the oxygen gas or ozone gas. Means for oxidizing the sample surface by irradiating ultraviolet rays while exposing the sample to the plasma gas of the oxygen gas or ozone gas by applying and gasifying the sample to oxidize or remove the organic photoresist film or organic contaminants. To take things, etc.

[0005]

EXAMPLES The present invention will be described in detail below with reference to examples.

Regarding the oxidation treatment of silicon wafers, the oxygen gas from the oxygen cylinder is converted into ozone through an ultraviolet irradiation type or corona discharge type ozone generator, and the ozone gas is introduced into the plasma generator to generate ozone plasma gas. By exposing the surface of the silicon wafer, which is previously installed in the plasma generator and heated to about 200 degrees, to the ozone plasma gas, a silicon oxide film having a thickness of about 2 nm can be formed in about 5 minutes. The interface state density of the oxide film thus formed is 10
^It is possible to form a high-quality oxide film having a sufficiently small value of ⁹ / cm ² and a small internal stress. Further, by coating a photoresist film on the surface of a silicon wafer and subjecting the photoresist film to argon plasma treatment or ion implantation of phosphorus, boron, arsenic or the like to promote polymerization, exposure to the ozone plasma gas described above facilitates It can be removed by oxidation. This is also the case with the cleaning treatment for oxidizing and removing the organic pollutants adhering to the surface of the silicon wafer, the polymerization of which has been promoted. Incidentally, the present invention is not limited to the oxidation treatment of the silicon wafer, the photoresist removal treatment on the silicon wafer, or the cleaning treatment of the silicon wafer, and the oxidation treatment of the material such as other metals or the material such as other metals. It can also be applied to the above photoresist removal processing and cleaning processing.

Next, the oxygen gas from the oxygen cylinder is turned into ozone either directly or through an ultraviolet irradiation type or corona discharge type ozone generator and introduced into the plasma generator to be turned into plasma. Ultraviolet rays are radiated from a quartz or sapphire window and pre-installed in the plasma generator. When irradiating oxygen gas plasma with ultraviolet rays, the temperature is normal temperature. By exposing the surface of the heated silicon wafer, a silicon oxide film having a thickness of about 2 nm can be formed in about 5 minutes, and the interface state density of the oxide film thus formed is 10 ⁹ / cm 2. ^It is possible to form a high quality oxide film with a sufficiently small value of ² and a small internal stress. Further, even if a photoresist film is applied to the surface of a silicon wafer, and the photoresist film is subjected to argon plasma treatment or ion implantation of phosphorus, boron, arsenic or the like to promote polymerization, it is easily treated by the method. Can be removed by oxidation. This can also be easily removed by oxidation with respect to the cleaning treatment for oxidizing and removing the organic pollutants that are attached to the surface of the silicon wafer and whose polymerization has been promoted. Incidentally, the present invention is not limited to the oxidation treatment of the silicon wafer, the photoresist removal treatment on the silicon wafer, or the cleaning treatment of the silicon wafer, and the oxidation treatment of the material such as other metals or the material such as other metals. It can be applied to the above-mentioned photoresist removal processing, cleaning processing, and the like, as in the above-mentioned embodiment.

[0008]

According to the present invention, low temperature oxidation at 300 ° C. or lower is possible, and it is possible to efficiently and completely remove even the polymerized organic photoresist film and organic pollutants.

Claims (2)

[Claims] 1. A high frequency is applied to ozone gas from an ozone generator to generate ozone plasma gas, and the sample is exposed to the ozone plasma gas to oxidize the surface of the sample, or to remove an organic photoresist film or an organic pollutant. Ozone plasma treatment characterized by oxidation removal treatment. 2. The surface of the sample is oxidized by irradiating ultraviolet rays while exposing the sample to the plasma gas of the oxygen gas or the ozone gas while applying a high frequency to the oxygen gas or the ozone gas to generate the plasma gas. Ozone plasma processing characterized by oxidizing and removing photoresist films and organic pollutants.