JPH06349892A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH06349892A
JPH06349892A JP13822993A JP13822993A JPH06349892A JP H06349892 A JPH06349892 A JP H06349892A JP 13822993 A JP13822993 A JP 13822993A JP 13822993 A JP13822993 A JP 13822993A JP H06349892 A JPH06349892 A JP H06349892A
Authority
JP
Japan
Prior art keywords
solder
heating
semiconductor device
connection terminal
terminal portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13822993A
Other languages
Japanese (ja)
Inventor
Masaki Muto
正樹 武藤
Katsunori Moritoki
克典 守時
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13822993A priority Critical patent/JPH06349892A/en
Publication of JPH06349892A publication Critical patent/JPH06349892A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/75252Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7598Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes

Landscapes

  • Wire Bonding (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To provide a manufacturing method of a semiconductor device wherein a semiconductor element having electrodes of high density and small intervals are uniformly stably connected with a conductor pattern on a semiconductor device circuit board. CONSTITUTION:On a semiconductor device circuit board 6 on which a conductor pattern 7 provided with a plurality of connection terminal parts 8 covered with solder, one or more semiconductor element substrates 2 which have, on the surface, a plurality of electrode parts 4 corresponding with a plurality of connection terminal parts 8 covered with solder are mounted in the manner in which a plurality of the connection terminal parts 8 covered with solder face a plurality of the electrode parts 4 and are in contact with them. A pressing-heating tool 7 is made to abut against the rear of the semiconductor element substrate 2 facing upward, and the pressure and the heat of the pressing.heating tool 7 are applied to solder via the semiconductor element substrate 2. The solder is fused and soldering is performed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体素子基板を半導体
装置回路基板上に半田付けする半導体装置の製造方法に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device in which a semiconductor element substrate is soldered onto a semiconductor device circuit board.

【0002】[0002]

【従来の技術】 近年、電子機器の小型
化、高機能化に伴い、半導体素子の電極が多数化、狭間
隔化し、半導体素子の数も増加している。このため、半
導体素子の実装方法もより安定した、より簡便な実装方
法が求められている。
2. Description of the Related Art In recent years, with the miniaturization and higher functionality of electronic devices, the number of electrodes of semiconductor elements has increased and the distance between them has decreased, and the number of semiconductor elements has also increased. Therefore, there is a demand for a more stable and simpler mounting method for the semiconductor element.

【0003】従来例の半導体装置の製造方法により、半
導体素子としてのLEDアレイチップを使用して半導体
装置であるLEDプリントヘッドを製造する場合の製造
方法を図25に基づいて説明する。
A manufacturing method in the case of manufacturing an LED print head which is a semiconductor device by using an LED array chip as a semiconductor element by a conventional method of manufacturing a semiconductor device will be described with reference to FIG.

【0004】図25において、半導体素子としてのLE
Dアレイチップ51が複数個、直線状に配置されてい
る。LEDアレイチップ51は、一導体型半導体素子基
板の主面上に他導体型半導体領域が直線状に配列し、突
起状電極部52が前記他導体型半導体領域に設けられて
いる。従来例では、この突起状電極部52は半田によっ
て形成されている。
In FIG. 25, LE as a semiconductor element
A plurality of D array chips 51 are linearly arranged. In the LED array chip 51, the other conductor type semiconductor regions are linearly arranged on the main surface of the one conductor type semiconductor element substrate, and the protruding electrode portions 52 are provided in the other conductor type semiconductor regions. In the conventional example, the protruding electrode portion 52 is formed of solder.

【0005】又、半導体装置としてのLEDプリントヘ
ッドを構成する半導体装置回路基板54には直線状に配
列され複数の導体パターンがあり、これらの導体パター
ンの端部に、前記突起状電極部52に対向する接続端子
部53がある。
Further, a semiconductor device circuit board 54 constituting an LED print head as a semiconductor device has a plurality of conductor patterns arranged in a straight line, and at the end portions of these conductor patterns, the projecting electrode portion 52 is provided. There are connection terminal portions 53 facing each other.

【0006】上記のLEDアレイチップ51を上記の半
導体装置回路基板54の上に半田付けするには、先ず、
半導体装置回路基板54の接続端子部53の上に、LE
Dアレイチップ51の突起状電極部52を当接させ、一
導体型半導体素子基板の裏面から圧力を加え、半導体装
置回路基板54上にLEDアレイチップ51を直線状に
載置する。この半導体装置回路基板54を、電気炉等に
入れて高温空気中に放置し、突起状電極部52の半田を
加熱・融解し、大気中に取り出して冷却し、半田を凝固
して半田付けを完了する。
To solder the LED array chip 51 on the semiconductor device circuit board 54, first,
LE on the connection terminal portion 53 of the semiconductor device circuit board 54
The protruding electrode portions 52 of the D array chip 51 are brought into contact with each other, and pressure is applied from the back surface of the one-conductor type semiconductor element substrate to linearly mount the LED array chip 51 on the semiconductor device circuit board 54. This semiconductor device circuit board 54 is placed in an electric furnace or the like and left in high temperature air to heat and melt the solder of the projecting electrode portion 52, take it out into the atmosphere and cool it, and solidify the solder for soldering. Complete.

【0007】従来例は、上記の方法により、半導体装置
回路基板54上に、半導体素子である複数のLEDアレ
イチップ51を直線状に配列して半田付けし、半導体装
置であるLEDプリントヘッドを製造している。
In the conventional example, a plurality of LED array chips 51, which are semiconductor elements, are linearly arranged and soldered on the semiconductor device circuit board 54 by the above-mentioned method to manufacture an LED print head which is a semiconductor device. is doing.

【0008】[0008]

【発明が解決しようとする課題】しかし、上記の製造方
法では、高温大気中で半導体装置全体を加熱して半田を
融解しているので、熱伝動性が小さい空気から伝えられ
る半田融解熱は、空気の対流又は炉からの輻射に依存す
る。空気の対流や炉からの輻射による熱は、半導体装置
の形状により部分的に不均一になり、突起状電極の半田
の温度が突起状電極間で不均一になる。このため、一つ
の半導体素子内や複数の半導体素子間で、温度が上がり
過ぎて半田によるショートが発生したり、温度上昇が不
足して半田付けが不完全になってオープンが発生すると
いう問題点がある。
However, in the above manufacturing method, since the entire semiconductor device is heated in the high temperature atmosphere to melt the solder, the heat of solder melting transmitted from the air having a small heat conductivity is It depends on air convection or radiation from the furnace. The heat generated by the convection of air and the radiation from the furnace is partially nonuniform due to the shape of the semiconductor device, and the temperature of the solder of the projecting electrodes is not uniform among the projecting electrodes. Therefore, in one semiconductor element or between a plurality of semiconductor elements, the temperature rises excessively and a short circuit due to solder occurs, or the temperature rise is insufficient and soldering is incomplete, resulting in an open problem. There is.

【0009】本発明は、上記問題点を解決し、高密度で
狭間隔な突起状電極を有する半導体素子と半導体装置用
回路基板の導体パターンとの接続を安定して行なう半導
体装置の製造方法を提供することを課題としている。
The present invention solves the above problems and provides a method of manufacturing a semiconductor device, which stably connects a semiconductor element having high-density and closely-spaced projecting electrodes to a conductor pattern of a semiconductor device circuit board. The challenge is to provide.

【0010】[0010]

【課題を解決するための手段】本願第1発明の半導体装
置の製造方法は、上記の課題を解決するために、複数の
半田で被覆された接続端子部を備えた導体パターンがあ
る半導体装置回路基板上に、前記複数の半田で被覆され
た接続端子部に対応する複数の電極部を表面に有する一
つ以上の半導体素子基板を、前記複数の半田で被覆され
た接続端子部と前記複数の電極部とが対向接触するよう
に載置し、上に向いた前記半導体素子基板の裏面に、加
圧・加熱ツールを当接し、加圧・加熱ツールの加圧と加
熱とを、前記半導体素子基板を介して前記半田に加え、
前記半田を融解して半田付けすることを特徴とする。
In order to solve the above problems, the semiconductor device manufacturing method according to the first invention of the present application is a semiconductor device circuit having a conductor pattern provided with a plurality of solder-covered connection terminal portions. On the substrate, at least one semiconductor element substrate having a plurality of electrode portions corresponding to the connection terminal portions covered with the plurality of solders on the surface, the connection terminal portion coated with the plurality of solders and the plurality of The semiconductor device is placed so that the electrode parts are in contact with each other, and the pressing / heating tool is brought into contact with the back surface of the semiconductor element substrate facing upward so that the pressing / heating of the pressing / heating tool is performed by the semiconductor element. In addition to the solder through the board,
It is characterized in that the solder is melted and soldered.

【0011】本願第2発明の半導体装置の製造方法は、
上記の課題を解決するために、複数の接続端子部を備え
た導体パターンがある半導体装置回路基板上に、前記複
数の接続端子部に対応する複数の半田で被覆された電極
部を表面に有する一つ以上の半導体素子基板を、前記複
数の接続端子部と前記複数の半田で被覆された電極部と
が対向接触するように載置し、上に向いた前記半導体素
子基板の裏面に、加圧・加熱ツールを当接し、加圧・加
熱ツールの加圧と加熱とを、前記半導体基板を介して前
記半田に加え、前記半田を融解して半田付けすることを
特徴とする。
A method of manufacturing a semiconductor device according to the second invention of the present application is
In order to solve the above problems, on a semiconductor device circuit board having a conductor pattern including a plurality of connection terminal portions, a plurality of solder-corresponding electrode portions corresponding to the plurality of connection terminal portions are provided on the surface. One or more semiconductor element substrates are placed so that the plurality of connection terminal portions and the electrode portions covered with the plurality of solders are in contact with each other, and the upper surface of the semiconductor element substrate is provided with a back surface. It is characterized in that a pressure / heating tool is brought into contact, pressure and heating of the pressure / heating tool are applied to the solder through the semiconductor substrate, and the solder is melted and soldered.

【0012】又、本発明の半導体素子装置の製造方法
は、上記の課題を解決するために、加圧・加熱ツール
は、半田が融解した後は加熱を停止し、半田が凝固する
まで加圧することが好適である。
In order to solve the above-mentioned problems, the method for manufacturing a semiconductor device according to the present invention is such that the pressing / heating tool stops heating after the solder has melted and pressurizes until the solder solidifies. Is preferred.

【0013】又、本発明の半導体装置の製造方法は、上
記の課題を解決するために、加圧・加熱ツールは、半田
が融解した後は、加圧と加熱を同時に停止することが好
適である。
In the method for manufacturing a semiconductor device of the present invention, in order to solve the above-mentioned problems, it is preferable that the pressing / heating tool simultaneously stop pressing and heating after the solder is melted. is there.

【0014】又、本発明の半導体装置の製造方法は、上
記の課題を解決するために、加圧・加熱ツールは、複数
個あり、加圧・加熱ツールが一対一で半導体素子基板を
加圧・加熱することが好適である。
In order to solve the above-mentioned problems, the semiconductor device manufacturing method of the present invention has a plurality of pressing / heating tools, and the pressing / heating tools press the semiconductor element substrate in a one-to-one manner. -It is preferable to heat.

【0015】又、本発明の半導体装置の製造方法は、上
記の課題を解決するために、加圧・加熱ツールは、一個
の加圧・加熱ツールが複数の半導体素子基板を加圧・加
熱することが好適である。
In order to solve the above-mentioned problems, the method of manufacturing a semiconductor device of the present invention is such that one pressing / heating tool presses / heats a plurality of semiconductor element substrates. Is preferred.

【0016】又、本発明の半導体装置の製造方法は、上
記の課題を解決するために、半導体装置回路基板を加熱
ステージ上に固定することが好適である。
Further, in the method for manufacturing a semiconductor device of the present invention, it is preferable that the circuit board of the semiconductor device is fixed on a heating stage in order to solve the above problems.

【0017】又、本発明の半導体装置の製造方法は、上
記の課題を解決するために、加熱ステージの温度は、半
田の融点よりも低いことが好適である。
Further, in the method of manufacturing a semiconductor device of the present invention, in order to solve the above problems, it is preferable that the temperature of the heating stage is lower than the melting point of the solder.

【0018】[0018]

【作用】本発明の半導体装置の製造方法は、半導体素子
の基板の裏面に加圧・加熱ツールを接触させ、熱伝動に
よって、半田を加熱している。半導体素子の基板の裏面
から半田までの距離と材質は、半導体素子の構造から略
等しく、前記裏面から半田までの熱伝導に対する抵抗は
略等しくなる。従って、各部分の半田の加熱温度が均一
化し半田付けの安定性が向上する。
According to the method of manufacturing a semiconductor device of the present invention, the pressing / heating tool is brought into contact with the back surface of the substrate of the semiconductor element to heat the solder by heat transfer. From the structure of the semiconductor element, the distance and material from the back surface of the substrate of the semiconductor element to the solder are substantially the same, and the resistance to heat conduction from the back surface to the solder is substantially the same. Therefore, the heating temperature of the solder in each portion is made uniform, and the stability of soldering is improved.

【0019】又、対向接触している半田付けをする接続
端子部や電極部そのものを通して熱を伝えるので、加熱
温度と加熱時間の制御が容易になり、半田の融解状態の
制御が容易になる。
Further, since the heat is transmitted through the connecting terminal portions or the electrode portions themselves which are in contact with each other for soldering, the heating temperature and the heating time are easily controlled, and the molten state of the solder is easily controlled.

【0020】又、ステージを加熱することによって、半
導体装置基板の温度を上昇させると、半導体装置基板の
温度はステージの熱容量が大きいので、半導体装置基板
の温度が比較的に均一に上昇し、加圧・加熱ツールによ
る温度上昇分が小さくなるので、半田の最終加熱温度の
ばらつきが小さくなり、均一な半田付けができる。
When the temperature of the semiconductor device substrate is raised by heating the stage, the temperature of the semiconductor device substrate rises relatively uniformly because the temperature of the semiconductor device substrate has a large heat capacity of the stage. Since the temperature rise due to the pressure / heating tool is reduced, the variation in the final heating temperature of the solder is reduced, and uniform soldering can be performed.

【0021】[0021]

【実施例】本発明の半導体装置の製造方法の第1実施例
を図1〜図10に基づいて説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of a semiconductor device manufacturing method of the present invention will be described with reference to FIGS.

【0022】図1〜図4は、第1実施例によって、半導
体素子としてのLEDアレイチップを使用して半導体装
置であるLEDプリントヘッドを製造する場合の製造方
法を示すものである。
1 to 4 show a manufacturing method in the case of manufacturing an LED print head which is a semiconductor device using an LED array chip as a semiconductor element according to the first embodiment.

【0023】図1において、半導体素子としてのLED
アレイチップ1は、一導電型半導体基板2を有し、一導
電型半導体基板2の主面上に他導電型半導体領域が直線
状に配列されている。複数のアルミ電極3が、LEDア
レイチップ1の主面上に直線状に配列され、アルミ電極
3の一端部は他導電型半導体領域と接続し、他端部には
電極部を有している。電極部は、本実施例においては金
により形成された突起状電極4になっている。
In FIG. 1, an LED as a semiconductor element
The array chip 1 has one conductivity type semiconductor substrate 2, and other conductivity type semiconductor regions are linearly arranged on the main surface of the one conductivity type semiconductor substrate 2. A plurality of aluminum electrodes 3 are linearly arranged on the main surface of the LED array chip 1, one end of the aluminum electrode 3 is connected to another conductivity type semiconductor region, and the other end has an electrode portion. . The electrode portion is the protruding electrode 4 formed of gold in this embodiment.

【0024】半導体装置であるLEDプリントヘッド5
は、半導体装置回路基板としてLEDアレイチップ1の
発光波長に対して透明な絶縁性基板6を有し、透明な絶
縁性基板6の主面上に前記突起状電極4と対応する接続
端子部8を有する導体パターン7があり、導体パターン
7の接続端子部8は半田によって形成されている。特に
本実施例では導体パターン7の接続端子部8の半田は融
点183℃とする。
LED print head 5 which is a semiconductor device
Has an insulating substrate 6 transparent to the emission wavelength of the LED array chip 1 as a semiconductor device circuit substrate, and a connecting terminal portion 8 corresponding to the protruding electrode 4 on the main surface of the transparent insulating substrate 6. And the connection terminal portion 8 of the conductor pattern 7 is formed of solder. In particular, in this embodiment, the solder of the connection terminal portion 8 of the conductor pattern 7 has a melting point of 183 ° C.

【0025】本実施例の製造装置は、加圧・加熱ツール
9とステージ10とを有する。ステージ10は、前記L
EDプリントヘッド5の透明な絶縁性基板6を固定す
る。加圧・加熱ツール9は、ステージ10に対して水平
方向に移動して位置決めし、上下方向に移動して図2に
示すようにLEDアレイチップ1の一導電型半導体基板
2を加圧すると共に、ツール9自身の温度上昇により一
導電型半導体基板2を介して接続端子部8の半田を加熱
する。この場合、加圧・加熱ツール9は、LEDアレイ
チップ1の透明な絶縁性基板6の裏面と平行な接触面を
有し、この接触面の寸法は、前記透明な絶縁性基板6の
寸法と略等しく、透明な絶縁性基板6と一対一の対応を
して、加圧・加熱する。
The manufacturing apparatus of this embodiment has a pressing / heating tool 9 and a stage 10. Stage 10 is the L
The transparent insulating substrate 6 of the ED print head 5 is fixed. The pressing / heating tool 9 horizontally moves and positions with respect to the stage 10, moves vertically and pressurizes one conductive type semiconductor substrate 2 of the LED array chip 1 as shown in FIG. The temperature rise of the tool 9 itself heats the solder of the connection terminal portion 8 through the one conductivity type semiconductor substrate 2. In this case, the pressing / heating tool 9 has a contact surface parallel to the back surface of the transparent insulating substrate 6 of the LED array chip 1, and the dimension of this contact surface is the same as the dimension of the transparent insulating substrate 6. Substantially equal, one-to-one correspondence with the transparent insulating substrate 6 is applied and pressure is applied.

【0026】第1実施例の動作を図1〜図4に基づいて
説明する。
The operation of the first embodiment will be described with reference to FIGS.

【0027】先ず、図1に示すように、LEDプリント
ヘッド5の透明な絶縁性基板6をステージ10上に載置
する。LEDアレイチップ1の複数の突起状電極4を複
数の導体パターン7の接続端子部8の半田に当接し、L
EDアレイチップ1を0.5〜1kgf/chipで加
圧し、突起状電極4の先端部を図5に示すように接続端
子部8の半田内に挿入する。これを所要のLEDアレイ
チップ1の数だけ繰り返し、図1に示すように複数のL
EDアレイチップ1を透明な絶縁性基板6上に直線状に
配列する。
First, as shown in FIG. 1, the transparent insulating substrate 6 of the LED print head 5 is placed on the stage 10. The plurality of protruding electrodes 4 of the LED array chip 1 are brought into contact with the solder of the connection terminal portions 8 of the plurality of conductor patterns 7, and L
The ED array chip 1 is pressurized at 0.5 to 1 kgf / chip, and the tip end portion of the protruding electrode 4 is inserted into the solder of the connection terminal portion 8 as shown in FIG. This is repeated for the required number of LED array chips 1, and as shown in FIG.
The ED array chip 1 is linearly arranged on the transparent insulating substrate 6.

【0028】図2において、加圧・加熱ツール9を降下
させ、LEDアレイチップ1の裏面に当接し、1〜2k
gf/chipで加圧すると共に加圧・加熱ツール9の
温度を190℃に加熱する。加圧・加熱ツール9の加熱
により接続端子部8の半田が融解し、加熱開始より約2
0〜60秒経過すると接続端子部8の半田と突起状電極
4の金との接触領域で合金が形成され、接続端子部8の
半田が突起状電極4に付着する。
In FIG. 2, the pressing / heating tool 9 is lowered and brought into contact with the back surface of the LED array chip 1 for 1-2 k.
The pressure of gf / chip is applied and the temperature of the pressurizing / heating tool 9 is heated to 190 ° C. The heating of the pressurizing / heating tool 9 melts the solder of the connection terminal portion 8 and about 2
After 0 to 60 seconds have elapsed, an alloy is formed in the contact area between the solder of the connecting terminal portion 8 and the gold of the protruding electrode 4, and the solder of the connecting terminal portion 8 adheres to the protruding electrode 4.

【0029】図3において、加圧・加熱ツール9の加熱
を停止させ、接続端子部8の半田の温度が凝固点183
℃以下になった後に、加圧・加熱ツール9をLEDアレ
イチップ1の裏面より上昇させてこのLEDアレイチッ
プ1の半田付けを終了する。
In FIG. 3, the heating of the pressurizing / heating tool 9 is stopped, and the temperature of the solder of the connection terminal portion 8 changes to the freezing point 183.
After the temperature falls below the temperature, the pressing / heating tool 9 is lifted from the back surface of the LED array chip 1 to finish the soldering of the LED array chip 1.

【0030】図4に示すように、図1〜図3の工程をL
EDプリントヘッド5の透明な絶縁性基板6上に配列さ
れたLEDアレイチップ1の数だけ繰り返し、複数のL
EDアレイチップ1のLEDプリントヘッド5への実装
を終了する。
As shown in FIG. 4, the steps of FIGS.
Repeated by the number of LED array chips 1 arranged on the transparent insulating substrate 6 of the ED print head 5, and a plurality of L
The mounting of the ED array chip 1 on the LED print head 5 is completed.

【0031】第1実施例での半田付け状態の詳細を図5
〜図10に基づいて説明する。
FIG. 5 shows the details of the soldering state in the first embodiment.
~ It demonstrates based on FIG.

【0032】図5〜図9は、図1〜図4の各製造工程に
おける突起状電極4と接続端子部8の半田の状態を拡大
した断面図である。
5 to 9 are enlarged cross-sectional views of the soldering state of the projecting electrodes 4 and the connection terminal portions 8 in the respective manufacturing steps of FIGS.

【0033】図5では、LEDアレイチップ1が0.5
〜1kgf/chipで加圧されているため、突起状電
極4の先端部分は接続端子部8の半田内に埋め込まれ、
突起状電極4と接続端子部8の半田は接着されている。
In FIG. 5, the LED array chip 1 has 0.5
Since the pressure is applied at ~ 1 kgf / chip, the tip portion of the protruding electrode 4 is embedded in the solder of the connection terminal portion 8,
The solder of the protruding electrode 4 and the connection terminal portion 8 are bonded.

【0034】図6では、加圧・加熱ツール9が下降し
て、一つのLEDアレイチップ1の裏面と接触して1〜
2kgf/chipで加圧し、突起状電極4の先端部分
は接続端子部8の半田内に更に食い込んで潰れる。ここ
で、加圧・加熱ツール9の温度を190℃にするとLE
Dアレイチップ1からアルミ電極3を通じて熱が伝わ
り、突起状電極4が加熱される。突起状電極4が加熱さ
れると、接続端子部8の半田は突起状電極4と接触して
いる半田表面から融解が開始され、突起状電極4の周辺
部からの半田が融解する。
In FIG. 6, the pressurizing / heating tool 9 descends and comes into contact with the back surface of one LED array chip 1 to
The pressure is applied at 2 kgf / chip, and the tip portion of the protruding electrode 4 further digs into the solder of the connection terminal portion 8 and is crushed. Here, if the temperature of the pressurizing / heating tool 9 is set to 190 ° C., LE
Heat is transmitted from the D array chip 1 through the aluminum electrode 3 to heat the protruding electrode 4. When the protruding electrode 4 is heated, the solder of the connection terminal portion 8 starts melting from the surface of the solder that is in contact with the protruding electrode 4, and the solder from the peripheral portion of the protruding electrode 4 melts.

【0035】図7では、接続端子部8の半田が融解し始
めるとその濡れ性より、接続端子部8の半田が突起状電
極4の上部に吸い上がり、加熱開始より20〜60秒経
過すると、突起状電極4と接続端子部8の半田の接触領
域において、突起状電極4の金と接続端子部8の半田の
合金が形成され、突起状電極4に接続端子部8の半田が
十分付着する。
In FIG. 7, when the solder of the connection terminal portion 8 begins to melt, the wettability of the solder of the connection terminal portion 8 causes the solder of the connection terminal portion 8 to be sucked up onto the upper portion of the projecting electrode 4, and 20 to 60 seconds after the start of heating, An alloy of gold of the protruding electrode 4 and solder of the connecting terminal portion 8 is formed in the contact area of the protruding electrode 4 and the solder of the connecting terminal portion 8, and the solder of the connecting terminal portion 8 is sufficiently adhered to the protruding electrode 4. .

【0036】図8では、加圧・加熱ツール9の加熱を停
止すると、接続端子部8の半田が凝固点の183℃以下
になり、接続端子部8の半田が凝固して、接続端子部8
の半田の吸い上がりが止まる。ここで加圧・加熱ツール
9を上昇させて加圧を停止する。
In FIG. 8, when the heating of the pressurizing / heating tool 9 is stopped, the solder of the connecting terminal portion 8 falls below the freezing point of 183 ° C., and the solder of the connecting terminal portion 8 solidifies, and the connecting terminal portion 8
No more solder is sucked up. Here, the pressurization / heating tool 9 is raised to stop the pressurization.

【0037】図9では、LEDプリントヘッド5をステ
ージ10より取り外し、自然冷却してLEDアレイチッ
プ1の実装が終了する。
In FIG. 9, the LED print head 5 is removed from the stage 10 and naturally cooled to complete the mounting of the LED array chip 1.

【0038】図10は、本実施例において、加圧・加熱
ツール9の加圧及び加熱による、LEDアレイチップ1
の任意の突起状電極4に加えられる圧力と温度の時間変
化を示すグラフである。
FIG. 10 shows that in this embodiment, the LED array chip 1 is produced by pressing and heating the pressing / heating tool 9.
3 is a graph showing changes over time in pressure and temperature applied to any of the protruding electrodes 4 of FIG.

【0039】先ず、t1で加圧・加熱ツール9により1
kgfの加圧と190℃の加熱が同時に開始される。突
起状電極4は所要の高さまで潰されると共に温度が上昇
し、突起状電極4の温度上昇に伴い接続端子部8の半田
の温度も上昇する。t2で突起状電極4の温度が183
℃に達すると、突起状電極4と接触している接続端子部
8の半田が融解し始める。t2からt3の間で接続端子
部8の半田の融解が進み、t3では接続端子部8の半田
の融解が十分に行われている。t3で加熱を停止する
と、接続端子部8の半田の温度は低下していき、t4で
凝固点に達する。
First, at t1, 1 is applied by the pressurizing / heating tool 9.
Pressurization of kgf and heating at 190 ° C. are started simultaneously. The protruding electrode 4 is crushed to a required height and the temperature thereof rises. As the temperature of the protruding electrode 4 rises, the temperature of the solder of the connection terminal portion 8 also rises. At t2, the temperature of the protruding electrode 4 is 183
When the temperature reaches ℃, the solder of the connection terminal portion 8 in contact with the protruding electrode 4 starts to melt. The melting of the solder of the connection terminal portion 8 progresses from t2 to t3, and the melting of the solder of the connection terminal portion 8 is sufficiently performed at t3. When the heating is stopped at t3, the temperature of the solder of the connection terminal portion 8 decreases and reaches the freezing point at t4.

【0040】ここで、t4以後では突起状電極4は接続
端子部8の半田により固定されているので位置は変わら
ない、即ち、複数の突起状電極4が固定されていること
により、複数の突起状電極4を有するLEDアレイチッ
プ1はLEDプリントヘッド5の接続端子部8の半田に
固定されている。従って、t5で加圧を停止してもLE
Dアレイチップ1の位置ずれは起こらない。
Here, after t4, the protruding electrode 4 is fixed by the solder of the connection terminal portion 8 and therefore the position does not change, that is, the plurality of protruding electrodes 4 are fixed, so that the plurality of protruding electrodes 4 are fixed. The LED array chip 1 having the electrode 4 is fixed to the solder of the connection terminal portion 8 of the LED print head 5. Therefore, even if the pressurization is stopped at t5, LE
The displacement of the D array chip 1 does not occur.

【0041】以上のように第1実施例によると、LED
アレイチップ1の裏面に加圧・加熱ツール9を接触させ
て、LEDアレイチップ1の一導電型半導体基板2の裏
面に加圧・加熱ツール9を接触させ、熱伝動によって、
半田を加熱している。LEDアレイチップ1の一導電型
半導体基板2の裏面から接続端子部8の半田までの距離
と材質は、LEDアレイチップ1の構造から略等しく、
前記裏面から半田までの熱伝導に対する抵抗は略等しく
なる。従って、各部分の半田の加熱温度が均一化し半田
付けの安定性が向上する。
As described above, according to the first embodiment, the LED
The pressure / heating tool 9 is brought into contact with the back surface of the array chip 1, and the pressure / heating tool 9 is brought into contact with the back surface of the one conductive type semiconductor substrate 2 of the LED array chip 1 by heat transfer.
The solder is heating. The distance from the back surface of the one-conductivity-type semiconductor substrate 2 of the LED array chip 1 to the solder of the connection terminal portion 8 and the material thereof are substantially the same from the structure of the LED array chip 1.
The resistance to heat conduction from the back surface to the solder is substantially equal. Therefore, the heating temperature of the solder in each portion is made uniform, and the stability of soldering is improved.

【0042】又、対向接触している半田付けをするべき
接続端子部8の半田や突起状電極4そのものを通して熱
を伝えるので、加熱温度と加熱時間の制御が容易にな
り、半田の融解状態の制御が容易になると共に、不必要
な領域で半田を融解することがなく半田の突起状電極4
への付着量の制御が容易になり、半田による短絡不良が
なくなる。
Further, since heat is transmitted through the solder of the connection terminal portion 8 to be soldered and the protruding electrodes 4 which are in contact with each other, the heating temperature and the heating time can be easily controlled, and the melting state of the solder can be controlled. It is easy to control and does not melt the solder in unnecessary areas.
It becomes easy to control the amount of adhesion to the solder, and short-circuit defects due to solder are eliminated.

【0043】また、半田融解後に加圧・加熱ツール9の
加熱を停止して、半田が凝固点以下の温度になってから
加圧・加熱ツール9の加圧を終了することにより、半田
融解時の流動性によるLEDアレイチップ1の位置ずれ
が防止される。
When the solder is melted, the heating of the pressure / heating tool 9 is stopped after the solder is melted, and the pressurization / heating tool 9 is stopped after the temperature of the solder is below the freezing point. Positional deviation of the LED array chip 1 due to fluidity is prevented.

【0044】次に、本発明の第2実施例を図11〜図2
0に基づいて説明する。
Next, a second embodiment of the present invention will be described with reference to FIGS.
A description will be given based on 0.

【0045】図11〜図14は、第2実施例によって、
半導体素子としてのLEDアレイチップを使用して半導
体装置であるLEDプリントヘッドを製造する場合の製
造方法を示すものである。
11 to 14 show a second embodiment according to the present invention.
1 shows a manufacturing method for manufacturing an LED print head which is a semiconductor device using an LED array chip as a semiconductor element.

【0046】図11において、半導体素子としてのLE
Dアレイチップ1の構造と、半導体装置であるLEDプ
リントヘッド5の半導体装置回路基板6の構造とが、第
1実施例と異なる。この相違点は、半田が、半導体素子
1と半導体装置回路基板6の何方に付いているかであっ
て、第1実施例では半田は半導体装置回路基板6側に、
第2実施例では半田は半導体素子1側に付いている。
In FIG. 11, LE as a semiconductor element
The structure of the D array chip 1 and the structure of the semiconductor device circuit board 6 of the LED print head 5, which is a semiconductor device, are different from those of the first embodiment. The difference lies in which side of the semiconductor element 1 and the semiconductor device circuit board 6 the solder is attached to. In the first embodiment, the solder is attached to the semiconductor device circuit board 6 side.
In the second embodiment, the solder is attached to the semiconductor element 1 side.

【0047】半導体素子であるLEDアレイチップ1
は、一導電型半導体基板2を有し、一導電型半導体基板
2の主面上に他導電型半導体領域が直線状に配列されて
いる。
LED array chip 1 which is a semiconductor element
Has a semiconductor substrate 2 of one conductivity type, and semiconductor regions of other conductivity type are linearly arranged on the main surface of the semiconductor substrate 2 of one conductivity type.

【0048】複数のアルミ電極3が、LEDアレイチッ
プ1の主面上に直線状に配列され、アルミ電極12の一
端部は他導電型半導体領域と接続し、他端部に電極部を
有している。電極部は、本実施例において半田により形
成された突起状電極13になっている。本実施例の突起
状電極13の半田の融点を183℃とする。
A plurality of aluminum electrodes 3 are linearly arranged on the main surface of the LED array chip 1, one end of the aluminum electrode 12 is connected to another conductivity type semiconductor region, and the other end has an electrode portion. ing. The electrode portion is the protruding electrode 13 formed of solder in this embodiment. The melting point of the solder of the protruding electrode 13 of this embodiment is 183 ° C.

【0049】半導体装置であるLEDプリントヘッド5
は、半導体装置回路基板としてLEDアレイチップ1の
発光波長に対して透明な絶縁性基板6を有し、透明な絶
縁性基板6の主面上に前記突起状電極13と対応する導
体パターン接続端子部15がある。
LED print head 5 which is a semiconductor device
Has an insulating substrate 6 transparent to the emission wavelength of the LED array chip 1 as a semiconductor device circuit substrate, and a conductor pattern connection terminal corresponding to the projecting electrode 13 on the main surface of the transparent insulating substrate 6. There is a section 15.

【0050】第2実施例の製造装置は、第1実施例の図
1と同様に、加圧・加熱ツール9とステージ10とを有
する。ステージ10は、前記LEDプリントヘッド5の
透明な絶縁性基板6を固定する。加圧・加熱ツール9
は、ステージ10に対して水平方向に移動して位置決め
し、上下方向に移動して図2に示すようにLEDアレイ
チップ1の一導電型半導体基板2を加圧すると共に、ツ
ール9自身の温度上昇により一導電型半導体基板2を介
して接続端子部8の半田を加熱する。この場合、加圧・
加熱ツール9は、LEDアレイチップ1の透明な絶縁性
基板6の裏面と平行な接触面を有し、この接触面の寸法
は、前記透明な絶縁性基板6の寸法と略等しく、透明な
絶縁性基板6と一対一の対応をして、加圧・加熱する。
The manufacturing apparatus of the second embodiment has a pressing / heating tool 9 and a stage 10 as in FIG. 1 of the first embodiment. The stage 10 fixes the transparent insulating substrate 6 of the LED print head 5. Pressure / heating tool 9
Moves horizontally to the stage 10 for positioning, moves vertically and pressurizes the one conductive type semiconductor substrate 2 of the LED array chip 1 as shown in FIG. 2, and raises the temperature of the tool 9 itself. Thus, the solder of the connection terminal portion 8 is heated through the one conductivity type semiconductor substrate 2. In this case, pressurization
The heating tool 9 has a contact surface parallel to the back surface of the transparent insulating substrate 6 of the LED array chip 1, and the dimension of this contact surface is substantially equal to the dimension of the transparent insulating substrate 6 and the transparent insulating substrate 6 is transparent. The pressure and heat are applied in one-to-one correspondence with the flexible substrate 6.

【0051】第2実施例の動作を図11〜図20に基づ
いて説明する。
The operation of the second embodiment will be described with reference to FIGS.

【0052】図11では、LEDアレイチップ1の複数
の突起状電極13の半田を透明な絶縁性基板6の複数の
導体パターン接続端子部15に当接し、0.5〜1kg
f/chipで加圧されているため、突起状電極13の
半田の先端部分は導体パターン接続端子部15上に仮固
定される。これを所要のLEDアレイチップ1の数だけ
繰り返し、複数のLEDアレイチップ1をLEDアレイ
チップ1の透明な絶縁性基板6上に直線的に配列する。
In FIG. 11, the solder of the plurality of protruding electrodes 13 of the LED array chip 1 is brought into contact with the plurality of conductor pattern connecting terminal portions 15 of the transparent insulating substrate 6 to form 0.5 to 1 kg.
Since the pressure is applied at f / chip, the tip of the solder of the protruding electrode 13 is temporarily fixed on the conductor pattern connection terminal portion 15. This is repeated for the required number of LED array chips 1, and a plurality of LED array chips 1 are linearly arranged on the transparent insulating substrate 6 of the LED array chips 1.

【0053】図12では、加圧・加熱ツール9が下降し
て、一つのLEDアレイチップ1の裏面と接触して1〜
2kgf/chipで加圧すると共に加圧・加熱ツール
9の温度を190℃に加熱する。突起状電極13の半田
が溶解し、加熱開始より約20〜60秒経過すると、突
起状電極13の半田と導体パターン接続端子部15との
接触領域で合金が形成され、突起状電極13の半田が導
体パターン接続端子部15に付着する。
In FIG. 12, the pressurizing / heating tool 9 descends and comes into contact with the back surface of one LED array chip 1 to
Pressure is applied at 2 kgf / chip and the temperature of the pressurizing / heating tool 9 is heated to 190 ° C. When the solder of the projecting electrode 13 is melted and about 20 to 60 seconds have elapsed from the start of heating, an alloy is formed in the contact area between the solder of the projecting electrode 13 and the conductor pattern connection terminal portion 15, and the solder of the projecting electrode 13 is formed. Adheres to the conductor pattern connection terminal portion 15.

【0054】図13では、加圧・加熱ツール9の加圧と
加熱とを同時に終了し、自然冷却して突起状電極13の
半田を凝固点183°C以下にする。
In FIG. 13, pressurization and heating of the pressurizing / heating tool 9 are finished at the same time, and natural cooling is performed to bring the solder of the protruding electrode 13 to a freezing point of 183 ° C. or lower.

【0055】図14では、図11〜図13の工程を、L
EDアレイチップ1の数だけ繰り返し、複数のLEDア
レイチップ1をLEDアレイチップ1の透明な絶縁性基
板6上に直線的に実装する。
In FIG. 14, the steps of FIGS.
The plurality of LED array chips 1 are linearly mounted on the transparent insulating substrate 6 of the LED array chip 1 by repeating the number of ED array chips 1.

【0056】第2実施例での半田付け状態の詳細を図1
5〜図19に基づいて説明する。
The details of the soldering state in the second embodiment are shown in FIG.
This will be described with reference to FIGS.

【0057】図15〜図19は図11〜図14の各製造
工程における突起状電極13の半田とLEDプリントヘ
ッド5の導体パターン接続端子部15との状態を拡大し
た断面図である。
FIGS. 15 to 19 are enlarged sectional views showing the states of the solder of the protruding electrodes 13 and the conductor pattern connecting terminal portions 15 of the LED print head 5 in the respective manufacturing steps of FIGS. 11 to 14.

【0058】図15では、LEDアレイチップ1が0.
5〜1kgf/chipで加圧されているため、突起状
電極13の半田は導体パターン接続端子部15と接着さ
れている。
In FIG. 15, the LED array chip 1 has a voltage of 0.
Since the pressure is applied at 5 to 1 kgf / chip, the solder of the protruding electrode 13 is bonded to the conductor pattern connecting terminal portion 15.

【0059】図16では、加圧・加熱ツール9を降下し
て、一つのLEDアレイチップ1の裏面と接触して1〜
2kgf/chipで加圧し、突起状電極13の半田と
導体パターン接続端子部15との接触面積が増加する。
ここで、加圧・加熱ツールの温度を190℃にするとL
EDアレイチップ1からアルミ電極3を通じて熱が伝わ
り、突起状電極13の半田が加熱される。突起状電極1
3の半田が加熱されると、突起状電極13の半田の融解
が始まる。
In FIG. 16, the pressurizing / heating tool 9 is lowered to contact with the back surface of one LED array chip 1 to
By pressurizing at 2 kgf / chip, the contact area between the solder of the protruding electrode 13 and the conductor pattern connecting terminal portion 15 increases.
Here, if the temperature of the pressure / heating tool is set to 190 ° C, L
Heat is transferred from the ED array chip 1 through the aluminum electrode 3, and the solder of the protruding electrode 13 is heated. Protruding electrode 1
When the solder of No. 3 is heated, the solder of the protruding electrode 13 starts to melt.

【0060】図17では、突起状電極13の半田が融解
し始めるとその濡れ性より、突起状電極13の半田の導
体パターン接続端子部15に対する接触領域が広がり、
加熱開始より20〜60秒経過すると、突起状電極13
の半田と導体パターン接続端子部15との接触領域にお
いて、突起状電極13の半田と導体パターン接続端子部
15との合金が形成され、突起状電極13の半田が導体
パターン接続端子部15に充分付着する。
In FIG. 17, when the solder of the projecting electrode 13 begins to melt, the wettability of the solder spreads the contact area of the solder of the projecting electrode 13 with the conductor pattern connecting terminal portion 15.
When 20 to 60 seconds have passed from the start of heating, the protruding electrode 13
In the contact area between the solder and the conductor pattern connecting terminal portion 15, an alloy of the solder of the protruding electrode 13 and the conductor pattern connecting terminal portion 15 is formed, and the solder of the protruding electrode 13 is sufficiently applied to the conductor pattern connecting terminal portion 15. Adhere to.

【0061】図18では、加圧・加熱ツール9の加熱と
加圧とを同時に終了する。このとき図15の工程でLE
Dアレイチップ1の突起状電極13の半田が導体パター
ン接続端子部15との仮固定で位置ずれを生じて、LE
Dアレイチップ1の複数の突起状電極13の半田が接触
している導体パターン接続端子部15とずれている場
合、半田の表面張力により、複数の突起状電極13の半
田が導体パターン接続端子部15の中央部へ移動し、L
EDアレイチップ1がセルフアライメントされる。その
後、突起状電極13の半田の温度が凝固点の183℃以
下になり、突起状電極13の半田が凝固してLEDアレ
イチップ1が固定される。
In FIG. 18, heating and pressurization of the pressurizing / heating tool 9 are finished at the same time. At this time, in the process of FIG.
The solder of the protruding electrode 13 of the D array chip 1 is temporarily fixed to the conductor pattern connection terminal portion 15 and is displaced, and
When the solder of the plurality of projecting electrodes 13 of the D array chip 1 is deviated from the contacting conductor pattern connecting terminal portion 15, the solder of the plurality of projecting electrodes 13 is transferred to the conductor pattern connecting terminal portion due to the surface tension of the solder. Move to the center of 15 and go to L
The ED array chip 1 is self-aligned. After that, the temperature of the solder of the protruding electrode 13 becomes 183 ° C. or lower of the freezing point, the solder of the protruding electrode 13 solidifies, and the LED array chip 1 is fixed.

【0062】図19では、半導体装置基板である透明な
絶縁性基板6をステージ8より取り外し、LEDアレイ
チップ1の実装が終了する。
In FIG. 19, the transparent insulating substrate 6 which is the semiconductor device substrate is removed from the stage 8, and the mounting of the LED array chip 1 is completed.

【0063】図20は第2実施例において、加圧・加熱
ツール9の加圧及び加熱による、LEDアレイチップ1
の任意の突起状電極13の半田に加えられる圧力と温度
の時間変化を示すグラフである。
FIG. 20 shows that in the second embodiment, the LED array chip 1 is manufactured by pressing and heating the pressing / heating tool 9.
3 is a graph showing changes over time in pressure and temperature applied to solder of any of the protruding electrodes 13 of FIG.

【0064】図20において、先ず、t1で加圧・加熱
ツール9により1kgfの加圧と190℃の加熱が同時
に開始され、突起状電極13の半田が所要の高さまで潰
されると共に加熱され、突起状電極13の半田の温度が
上昇する。t2で突起状電極13の半田の温度が183
℃に達すると、突起状電極13を形成している半田が融
解し始める。t2からt3の間で突起状電極13の半田
の融解が進み、t3では突起状電極13の半田の融解が
充分に行われている。t3で加圧・加熱ツール9の加熱
と加圧を同時に停止すると、突起状電極13の半田の温
度は低下してt4で凝固点の183℃に達する。同一L
EDアレイチップ1に設けられた複数の突起状電極13
の半田が導体パターン接続端子部15の端部方向にずれ
ている場合、このt3からt4までの間に融解した半田
の表面張力により、複数の突起状電極13の半田がセル
フアライメントされる。この後t4で半田の温度は凝固
点に達し、t4以後では突起状電極13の半田によって
固定されているので位置は変わらない、即ち、複数の突
起状電極13の半田が半導体装置基板である透明な絶縁
性基板6の導体パターン接続端子部15に固定されてい
ることにより、LEDアレイチップ1は半田に固定され
ている。
In FIG. 20, first, at t1, pressurization / heating tool 9 starts pressurization of 1 kgf and heating at 190 ° C. at the same time, and the solder of protruding electrode 13 is crushed to a required height and heated, The temperature of the solder of the strip electrode 13 rises. At t2, the temperature of the solder of the protruding electrode 13 is 183
When the temperature reaches ℃, the solder forming the protruding electrodes 13 begins to melt. The melting of the solder of the protruding electrode 13 progresses from t2 to t3, and the melting of the solder of the protruding electrode 13 is sufficiently performed at t3. When the heating and the pressing of the pressurizing / heating tool 9 are stopped at the same time at t3, the temperature of the solder of the projecting electrodes 13 decreases and reaches the freezing point of 183 ° C. at t4. Same L
Plural protruding electrodes 13 provided on the ED array chip 1
When the solder is displaced toward the end of the conductor pattern connecting terminal portion 15, the solder of the plurality of protruding electrodes 13 is self-aligned due to the surface tension of the melted solder from t3 to t4. After that, at t4, the temperature of the solder reaches the freezing point, and after t4, the position of the solder does not change because it is fixed by the solder of the projecting electrodes 13, that is, the solder of the plurality of projecting electrodes 13 is a transparent semiconductor device substrate. The LED array chip 1 is fixed to the solder by being fixed to the conductor pattern connection terminal portion 15 of the insulating substrate 6.

【0065】以上のように第2実施例によると、半田融
解後に加圧・加熱ツール9の加圧と加熱を同時に終了す
ることにより、半田が凝固点以下の温度になる前に半田
の表面張力によるセルフアライメントが行われ、複数の
突起状電極13の半田と導体パターン接続端子部15の
接触領域が導体パターン接続端子部15の接続領域の中
央へ移動し、LEDアレイチップ1を半導体回路基板6
に仮固定した時の位置ずれを補正することができる。
As described above, according to the second embodiment, the pressing and heating of the pressurizing / heating tool 9 are finished at the same time after the melting of the solder, so that the surface tension of the solder is caused by the surface tension of the solder before the temperature becomes lower than the freezing point. Self-alignment is performed, the contact area between the solder of the plurality of projecting electrodes 13 and the conductor pattern connection terminal portion 15 moves to the center of the connection area of the conductor pattern connection terminal portion 15, and the LED array chip 1 is placed on the semiconductor circuit board 6.
It is possible to correct the positional deviation when temporarily fixed to.

【0066】次に、本発明の第3実施例を図21に基づ
いて説明する。
Next, a third embodiment of the present invention will be described with reference to FIG.

【0067】図21に示す第3実施例が、第1実施例と
異なるのは、加圧・加熱ヘッドだけである。第3実施例
では、半導体素子としてのLEDアレイチップ1に一対
一で対応できるだけの複数の加圧・加熱ヘッド17を備
えているので、一回の動作で、半導体素子としてのLE
Dアレイチップ1の複数個を半導体装置であるLEDプ
リントヘッド5に実装できる。
The third embodiment shown in FIG. 21 differs from the first embodiment only in the pressure / heating head. In the third embodiment, the LED array chip 1 as a semiconductor element is provided with a plurality of pressurizing / heating heads 17 capable of corresponding one-to-one. Therefore, the LE as a semiconductor element can be operated by one operation.
A plurality of D array chips 1 can be mounted on the LED print head 5 which is a semiconductor device.

【0068】他のことがらは、第1実施例と同様である
ので説明を省略する。
Since other matters are the same as those in the first embodiment, the description thereof will be omitted.

【0069】次に、本発明の第4実施例を図22に基づ
いて説明する。
Next, a fourth embodiment of the present invention will be described with reference to FIG.

【0070】図22に示す第4実施例が、第1実施例と
異なるのは、加圧・加熱ヘッドだけである。第4実施例
では、半導体素子としてのLEDアレイチップ1の複数
個に対応できる加圧・加熱ヘッド27を備えているの
で、一回の動作で、半導体素子としてのLEDアレイチ
ップ1の複数個を半導体装置であるLEDプリントヘッ
ド5に実装できる。
The fourth embodiment shown in FIG. 22 differs from the first embodiment only in the pressure / heating head. In the fourth embodiment, since the pressurizing / heating head 27 capable of accommodating a plurality of LED array chips 1 as semiconductor elements is provided, a plurality of LED array chips 1 as semiconductor elements can be operated by one operation. It can be mounted on the LED print head 5, which is a semiconductor device.

【0071】他のことがらは、第1実施例と同様である
ので説明を省略する。
Since other matters are the same as those in the first embodiment, the description thereof will be omitted.

【0072】本発明の半導体装置の製造方法の第5実施
例を図1〜図9、図23、図24に基づいて説明する。
A fifth embodiment of the method of manufacturing a semiconductor device according to the present invention will be described with reference to FIGS. 1 to 9, 23 and 24.

【0073】図1において、第1実施例では、ステージ
10を加熱していないが、第5実施例では、ステージ1
0も加熱する。
In FIG. 1, the stage 10 is not heated in the first embodiment, but the stage 1 is not used in the fifth embodiment.
0 is also heated.

【0074】第5実施例が第1実施例と異なるのは、ス
テージ10の加熱だけである。
The fifth embodiment differs from the first embodiment only in the heating of the stage 10.

【0075】実施例5の動作を図1〜図9、図23を用
いて説明する。
The operation of the fifth embodiment will be described with reference to FIGS. 1 to 9 and 23.

【0076】図1では、半導体素子としてのLEDアレ
イチップ1は、一導電型半導体基板2を有し、一導電型
半導体基板2の主面上に他導電型半導体領域が直線状に
配列されている。複数のアルミ電極3が、LEDアレイ
チップ1の主面上に直線状に配列され、アルミ電極3の
一端部は他導電型半導体領域と接続し、他端部には電極
部を有している。電極部は、本実施例においては金によ
り形成された突起状電極4になっている。
In FIG. 1, an LED array chip 1 as a semiconductor element has a semiconductor substrate 2 of one conductivity type, and semiconductor regions of other conductivity type are linearly arranged on the main surface of the semiconductor substrate 2 of one conductivity type. There is. A plurality of aluminum electrodes 3 are linearly arranged on the main surface of the LED array chip 1, one end of the aluminum electrode 3 is connected to another conductivity type semiconductor region, and the other end has an electrode portion. . The electrode portion is the protruding electrode 4 formed of gold in this embodiment.

【0077】半導体装置であるLEDプリントヘッド5
は、半導体装置回路基板としてLEDアレイチップ1の
発光波長に対して透明な絶縁性基板6を有し、透明な絶
縁性基板6の主面上に前記突起状電極4と対応する接続
端子部8を有する導体パターン7があり、導体パターン
7の接続端子部8は半田によって形成されている。特に
本実施例では導体パターン7の接続端子部8は融点18
3℃の半田とする。
LED print head 5 which is a semiconductor device
Has an insulating substrate 6 transparent to the emission wavelength of the LED array chip 1 as a semiconductor device circuit substrate, and a connecting terminal portion 8 corresponding to the protruding electrode 4 on the main surface of the transparent insulating substrate 6. And the connection terminal portion 8 of the conductor pattern 7 is formed of solder. Particularly in this embodiment, the connection terminal portion 8 of the conductor pattern 7 has a melting point of 18
Use 3 ℃ solder.

【0078】前記透明な絶縁性基板6の複数の導体パタ
ーン7の接続端子部8の半田に、LEDアレイチップ1
の複数の突起状電極4を当接し、LEDアレイチップ1
を0.5〜1kgf/chipで加圧し、突起状電極4
の先端部を接続端子部8の半田内に挿入する。これを所
要のLEDアレイチップ1の数だけ繰り返し、複数のL
EDアレイチップ1を前記透明な絶縁性基板6上に直線
状に配列し、170℃に加熱したステージ10の所定位
置に前記透明な絶縁性基板6を主面を上向きに設置し、
接続端子部8の半田の温度を170℃にする。
The LED array chip 1 is soldered to the connection terminal portions 8 of the plurality of conductor patterns 7 on the transparent insulating substrate 6.
A plurality of protruding electrodes 4 of the LED array chip 1
Is applied at 0.5 to 1 kgf / chip and the protruding electrode 4
The tip end of is inserted into the solder of the connection terminal portion 8. This is repeated for the required number of LED array chips 1 to obtain a plurality of L
The ED array chip 1 is linearly arranged on the transparent insulating substrate 6, and the transparent insulating substrate 6 is placed at a predetermined position of the stage 10 heated to 170 ° C. with the main surface facing upward.
The temperature of the solder of the connection terminal portion 8 is set to 170 ° C.

【0079】図2では、加圧・加熱ツール9を降下さ
せ、LEDアレイチップ1の裏面に当接し、1〜2kg
f/chipで加圧すると共に加圧・加熱ツール9の温
度を190℃に加熱する。加圧・加熱ツール9の加熱開
始より数秒で接続端子部8の半田が融解し、20〜60
sec経過すると接続端子部8の半田が突起状電極4に
付着し、半田と金の合金が形成される。
In FIG. 2, the pressurizing / heating tool 9 is lowered and brought into contact with the back surface of the LED array chip 1, and 1-2 kg.
The pressure of f / chip is applied and the temperature of the pressurizing / heating tool 9 is heated to 190 ° C. The solder of the connection terminal portion 8 melts within 20 seconds from the start of the heating of the pressurizing / heating tool 9, and 20 to 60
After the elapse of sec, the solder of the connection terminal portion 8 adheres to the projecting electrodes 4, and an alloy of solder and gold is formed.

【0080】図3では、加圧・加熱ツール9の加熱を停
止し、接続端子部8の半田の温度がステージ10の温度
170℃になった後に加圧・加熱ツール9を上昇させ、
LEDアレイチップ1の裏面より加圧・加熱ツール9を
離す。
In FIG. 3, the heating of the pressing / heating tool 9 is stopped, and after the temperature of the solder of the connection terminal portion 8 reaches the temperature 170 ° C. of the stage 10, the pressing / heating tool 9 is raised.
The pressure / heating tool 9 is released from the back surface of the LED array chip 1.

【0081】図4では、図1〜図3の工程を繰り返し、
複数のLEDアレイチップ1を回路基板4上に実装す
る。
In FIG. 4, the steps of FIGS. 1 to 3 are repeated,
A plurality of LED array chips 1 are mounted on the circuit board 4.

【0082】第5実施例の原理を図5〜図9、図23、
図24に基づいて説明する。
The principle of the fifth embodiment will be described with reference to FIGS.
It will be described with reference to FIG.

【0083】図5〜図9は、図1〜図4の各製造工程に
おける突起状電極4と接続端子部8の半田の状態を拡大
した断面図である。
5 to 9 are enlarged sectional views showing the soldering state of the projecting electrodes 4 and the connection terminal portions 8 in the respective manufacturing steps of FIGS.

【0084】図5では、LEDアレイチップ1が0.5
〜1kgf/chipで加圧されているため、突起状電
極4の先端部分は接続端子部8の半田内に埋め込まれ、
潰れている。
In FIG. 5, the LED array chip 1 has 0.5
Since the pressure is applied at ~ 1 kgf / chip, the tip portion of the protruding electrode 4 is embedded in the solder of the connection terminal portion 8,
It is crushed.

【0085】図6では、ステージ10の温度170℃が
透明な絶縁性基板6と導体パターン7を通じて接続端子
部8の半田に伝わり、融解点が183℃の半田は融解直
前の状態にある。
In FIG. 6, the temperature of 170 ° C. of the stage 10 is transmitted to the solder of the connecting terminal portion 8 through the transparent insulating substrate 6 and the conductor pattern 7, and the solder having the melting point of 183 ° C. is in the state just before melting.

【0086】図7では、加圧・加熱ツール9を下降し
て、一つのLEDアレイチップ1の裏面と接触して1〜
2kgf/chipで加圧させ、突起状電極4の先端部
分は接続端子部8の半田内に更に食い込んで潰れる。こ
こで、加圧・加熱ツール9の温度を190℃にするとL
EDアレイチップ1からアルミ電極3を通じて熱が伝わ
り、突起状電極4が加熱される。突起状電極4が加熱さ
れると、接続端子部8の半田は突起状電極4と接触して
いる半田表面から融解が開始され、突起状電極4の周辺
部の半田が融解する。
In FIG. 7, the pressurizing / heating tool 9 is lowered to contact with the back surface of one LED array chip 1 to
The pressure is applied at 2 kgf / chip, and the tip portion of the protruding electrode 4 further digs into the solder of the connection terminal portion 8 and is crushed. Here, if the temperature of the pressurizing / heating tool 9 is set to 190 ° C., L
Heat is transferred from the ED array chip 1 through the aluminum electrode 3 to heat the protruding electrode 4. When the projecting electrode 4 is heated, the solder of the connection terminal portion 8 starts melting from the surface of the solder that is in contact with the projecting electrode 4, and the solder around the projecting electrode 4 melts.

【0087】図8では、加圧・加熱ツール9のみにより
加熱されたLEDアレイチップ1はその中央部の温度が
高く、端部の温度が低い温度分布を生じる。しかし、ス
テージ10の加熱によりLEDアレイチップ1全体が1
70℃に加熱され、接続端子部8の半田は総て融解直前
の状態にあるため、加圧・加熱ツール9から190℃の
加熱が行われると、13℃の温度上昇で接続端子部8の
半田は融解する。従って、LEDアレイチップ1の中央
部と端部での接続端子部8の半田の融解開始の時間差が
殆ど無くなる。このため、加圧・加熱ツール9の加熱開
始から数秒で突起状電極4は接続端子部8の半田の融解
点以上に加熱され、接続端子部8の半田が融解し始める
とその濡れ性より、接続端子部8の半田が突起状電極4
の上部に吸い上がる。加熱開始より20〜60sec経
過するとLEDアレイチップ1の中央部と端部の突起状
電極4に接続端子部8の半田が充分付着する。加圧・加
熱ツール9の加熱を停止すると、接続端子部8の半田が
凝固点の183℃以下になり、接続端子部8の半田が凝
固して、接続端子部8の半田の吸い上がりが止まる。更
に、接続端子部8の半田はステージ温度の170℃な
る。ここで加圧・加熱ツール9を上昇させて加圧を停止
する。図9では、透明な絶縁性基板6をステージ10か
ら取り外し、自然冷却してLEDアレイチップ1の実装
が終了する。
In FIG. 8, the LED array chip 1 heated only by the pressurizing / heating tool 9 has a high temperature in the central portion and a low temperature in the end portions. However, heating the stage 10 causes the entire LED array chip 1 to
Since the solder of the connection terminal portion 8 is heated to 70 ° C. and all of the solder in the connection terminal portion 8 is in a state immediately before melting, when the pressure / heating tool 9 is heated to 190 ° C., the temperature of the connection terminal portion 8 rises by 13 ° C. The solder melts. Therefore, there is almost no time difference between the central portion and the end portion of the LED array chip 1 at which the solder of the connection terminal portion 8 starts melting the solder. Therefore, within a few seconds from the start of heating of the pressurizing / heating tool 9, the protruding electrode 4 is heated to a temperature higher than the melting point of the solder of the connecting terminal portion 8, and when the solder of the connecting terminal portion 8 begins to melt The solder of the connection terminal portion 8 is the protruding electrode 4
Wicks to the top of the. After 20 to 60 seconds have passed from the start of heating, the solder of the connection terminal portion 8 is sufficiently attached to the protruding electrodes 4 at the central portion and the end portion of the LED array chip 1. When the heating of the pressurizing / heating tool 9 is stopped, the solder of the connection terminal portion 8 becomes below the freezing point of 183 ° C., the solder of the connection terminal portion 8 solidifies, and the suction of the solder of the connection terminal portion 8 stops. Further, the solder of the connection terminal portion 8 has a stage temperature of 170 ° C. Here, the pressurization / heating tool 9 is raised to stop the pressurization. In FIG. 9, the transparent insulating substrate 6 is removed from the stage 10 and naturally cooled to complete the mounting of the LED array chip 1.

【0088】図23は、第5実施例において、ステージ
10の加熱と加圧・加熱ツール9の加圧及び加熱によ
る、LEDアレイチップ1の任意の突起状電極4に加え
られる圧力と温度の時間変化を示すグラフである。
FIG. 23 shows the pressure and temperature time applied to an arbitrary protruding electrode 4 of the LED array chip 1 by heating the stage 10 and pressing and heating the heating tool 9 in the fifth embodiment. It is a graph which shows change.

【0089】先ず、t1で透明な絶縁性基板6を170
℃に加熱されたステージ10上に設置すると、接続端子
部8の半田が加熱され、t2で半田の温度は170℃に
なる。t3で加圧・加熱ツール9により1kgfの加圧
と190℃の加熱が同時に開始され、突起状電極4が所
要の高さまで潰されると共に加熱され、突起状電極4の
加熱に伴い半田の温度も上昇する。この場合には、半田
の温度が170℃から190℃になるだけなので、t3
からt4間の数秒の短時間で183℃に上昇し、同一L
EDアレイチップ1に設けられた複数の突起状電極4
が、183℃に達する時間t4が、中央部と端部で殆ど
差がなくなる。このため、複数の突起状電極4と接触し
ている複数の接続端子部8の半田が融解しているt4か
らt5までの時間のばらつきが小さくなるため、同一L
EDアレイチップ1内の複数の突起状電極4と接続端子
部8の半田との接続状態の差異が小さくなり、半田付け
の状態が均一になる。t5では半田の融解が十分に行わ
れているので、t5で加熱を停止する。半田の温度は低
下し、t6で凝固点に達する。
First, at t1, the transparent insulating substrate 6 is set to 170
When it is placed on the stage 10 heated to 0 ° C., the solder of the connection terminal portion 8 is heated, and the temperature of the solder reaches 170 ° C. at t2. At t3, the pressurization / heating tool 9 starts pressurization of 1 kgf and heating at 190 ° C. at the same time, and the protruding electrode 4 is crushed and heated to a required height, and the temperature of the solder is also increased as the protruding electrode 4 is heated. To rise. In this case, the solder temperature only changes from 170 ° C to 190 ° C, so t3
To 183 ° C within a short time of several seconds from time t4 to t4, and the same L
Plural protruding electrodes 4 provided on the ED array chip 1
However, there is almost no difference between the central portion and the end portion at the time t4 when reaching 183 ° C. For this reason, the variation in the time from t4 to t5 when the solder of the plurality of connecting terminal portions 8 in contact with the plurality of protruding electrodes 4 is melted is reduced.
The difference in the connection state between the plurality of protruding electrodes 4 in the ED array chip 1 and the solder of the connection terminal portion 8 becomes small, and the soldering state becomes uniform. At t5, the solder has been sufficiently melted, so heating is stopped at t5. The temperature of the solder drops and reaches the freezing point at t6.

【0090】t6以後では突起状電極4は接続端子部8
の半田により固定されているので位置は変わらない、即
ち、複数の突起状電極4が固定されていることにより、
複数の突起状電極4を有するLEDアレイチップ1は半
田によって、透明な絶縁性基板6に固定されている。従
って、t7で加圧を停止してもLEDアレイチップ1の
位置ずれは起こらない。更に、t8で複数のLEDアレ
イチップ1が直線状に実装された透明な絶縁性基板6を
ステージ8から外し、冷却する。
After t6, the protruding electrode 4 is connected to the connection terminal portion 8
Since it is fixed by soldering, the position does not change, that is, because the plurality of protruding electrodes 4 are fixed,
The LED array chip 1 having a plurality of protruding electrodes 4 is fixed to a transparent insulating substrate 6 by soldering. Therefore, even if the pressurization is stopped at t7, the LED array chip 1 is not displaced. Further, at t8, the transparent insulating substrate 6 on which the plurality of LED array chips 1 are linearly mounted is removed from the stage 8 and cooled.

【0091】図24は第1実施例と第5実施例におい
て、加圧・加熱ツール9によりLEDアレイチップ1が
加熱されているときの透明な絶縁性基板6上の複数の導
体パターンの接続端子部8の半田の温度分布を示すグラ
フである。
FIG. 24 shows connection terminals of a plurality of conductor patterns on the transparent insulating substrate 6 when the LED array chip 1 is heated by the pressing / heating tool 9 in the first and fifth embodiments. 7 is a graph showing a temperature distribution of solder in a portion 8.

【0092】図24は縦軸に温度、横軸にグラフ上部に
示したLEDアレイチップ1を設置した透明な絶縁性基
板6の位置を示している。
In FIG. 24, the vertical axis shows the temperature, and the horizontal axis shows the position of the transparent insulating substrate 6 on which the LED array chip 1 shown in the upper part of the graph is installed.

【0093】図24において、曲線Lは、第1の実施例
の製造方法で、加圧・加熱ツール9によりLEDアレイ
チップ1が190℃に加熱されているときの透明な絶縁
性基板6の複数の接続端子部8の半田の任意の時刻の温
度分布である。
In FIG. 24, a curve L indicates a plurality of transparent insulating substrates 6 when the LED array chip 1 is heated to 190 ° C. by the pressing / heating tool 9 in the manufacturing method of the first embodiment. 3 is a temperature distribution of the solder of the connection terminal portion 8 at an arbitrary time.

【0094】又、曲線Mは、第5の実施例の製造方法に
より、ステージ10により透明な絶縁性基板6を170
℃に加熱すると共に、加圧・加熱ツール9によりLED
アレイチップ1が190℃に加熱されているときの、透
明な絶縁性基板6の複数の接続端子部8の半田の任意の
時刻の温度分布である。
The curve M indicates that the insulating substrate 6 which is transparent by the stage 10 is 170 by the manufacturing method of the fifth embodiment.
LED is heated by pressurizing / heating tool 9 while heating to ℃
It is the temperature distribution of the solder of the some connection terminal part 8 of the transparent insulating substrate 6 at any time when the array chip 1 is heated to 190 degreeC.

【0095】ここで、LEDアレイチップ1の中央部の
突起状電極4が接触している透明な絶縁性基板6上の位
置Aにおいては、曲線L上の点oと曲線M上の点qは同
一温度に達しているが、LEDアレイチップ1の端部の
突起状電極4が接触している透明な絶縁性基板6上の位
置Bにおいては、曲線L上の点pと曲線M上の点rとで
は、ステージ10により加熱されている場合の点rは点
qとほぼ同一温度に達しているが、ステージ10による
加熱のない点pは点oとの温度差が大きい。
Here, at the position A on the transparent insulating substrate 6 in contact with the protruding electrode 4 at the center of the LED array chip 1, the point o on the curve L and the point q on the curve M are At the position B on the transparent insulating substrate 6 which has reached the same temperature but is in contact with the protruding electrode 4 at the end of the LED array chip 1, the point p on the curve L and the point on the curve M are shown. With respect to r, the point r when heated by the stage 10 reaches almost the same temperature as the point q, but the point p where there is no heating by the stage 10 has a large temperature difference from the point o.

【0096】以上のように第5実施例によると、加熱さ
れたステージ10上に透明な絶縁性基板6を設置して、
ステージ10により接続端子部8の半田を融解直前の状
態にまで加熱することにより、LEDアレイチップ1の
中央部と端部での温度差による突起状電極4と接続端子
部8の半田との接続状態の差異が小さくなる。
As described above, according to the fifth embodiment, the transparent insulating substrate 6 is placed on the heated stage 10,
By heating the solder of the connection terminal portion 8 to the state immediately before melting by the stage 10, the connection between the protruding electrode 4 and the solder of the connection terminal portion 8 due to the temperature difference between the central portion and the end portion of the LED array chip 1 The difference between the states becomes smaller.

【0097】[0097]

【発明の効果】本発明の半導体装置の製造方法は、半導
体素子の裏面に加圧・加熱ツールを接触させ、ツールに
より加圧及び加熱を行うことにより、高密度で狭間隔な
突起状電極を有する半導体素子と半導体装置用回路基板
の導体パターンとの接続を安定、且つ、均一にできると
いう効果を奏する。
According to the method for manufacturing a semiconductor device of the present invention, a pressing / heating tool is brought into contact with the back surface of a semiconductor element, and pressing and heating are performed by the tool to form high-density and closely-spaced protruding electrodes. The effect that the connection between the semiconductor element and the conductor pattern of the semiconductor device circuit board can be made stable and uniform is achieved.

【0098】又、半導体装置用回路基板を固定するステ
ージを加熱して、半導体装置用回路基板の温度を半田の
融解温度近くまで上昇させると、加圧・加熱ツールによ
る温度上昇分が小さくなるので、半田の最終加熱温度の
ばらつきが小さくなり、更に均一な半田付けが可能にな
るという効果を奏する。
If the stage for fixing the semiconductor device circuit board is heated to raise the temperature of the semiconductor device circuit board to near the melting temperature of the solder, the temperature rise due to the pressing / heating tool becomes small. The effect that the variation in the final heating temperature of the solder is reduced and more uniform soldering is possible is achieved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1実施例又は第5実施例によるLE
Dプリントヘッドの製造方法の動作を示す図である。
FIG. 1 is an LE according to a first embodiment or a fifth embodiment of the present invention.
FIG. 8 is a diagram showing an operation of the method for manufacturing the D print head.

【図2】本発明の第1実施例又は第5実施例によるLE
Dプリントヘッドの製造方法の動作を示す図である。
FIG. 2 is an LE according to the first or fifth embodiment of the present invention.
FIG. 8 is a diagram showing an operation of the method for manufacturing the D print head.

【図3】本発明の第1実施例又は第5実施例によるLE
Dプリントヘッドの製造方法の動作を示す図である。
FIG. 3 is an LE according to the first or fifth embodiment of the present invention.
FIG. 8 is a diagram showing an operation of the method for manufacturing the D print head.

【図4】本発明の第1実施例又は第5実施例によるLE
Dプリントヘッドの製造方法の動作を示す図である。
FIG. 4 LE according to the first or fifth embodiment of the present invention
FIG. 8 is a diagram showing an operation of the method for manufacturing the D print head.

【図5】本発明の第1実施例又は第5実施例の製造工程
における突起状電極と接続端子部の半田との断面図であ
る。
FIG. 5 is a cross-sectional view of the protruding electrode and the solder of the connection terminal portion in the manufacturing process of the first embodiment or the fifth embodiment of the present invention.

【図6】本発明の第1実施例又は第5実施例の製造工程
における突起状電極と接続端子部の半田との断面図であ
る。
FIG. 6 is a cross-sectional view of the protruding electrode and the solder of the connection terminal portion in the manufacturing process of the first embodiment or the fifth embodiment of the present invention.

【図7】本発明の第1実施例又は第5実施例の製造工程
における突起状電極と接続端子部の半田との断面図であ
る。
FIG. 7 is a cross-sectional view of the protruding electrode and the solder of the connection terminal portion in the manufacturing process of the first embodiment or the fifth embodiment of the present invention.

【図8】本発明の第1実施例又は第5実施例の製造工程
における突起状電極と接続端子部の半田との断面図であ
る。
FIG. 8 is a cross-sectional view of the protruding electrode and the solder of the connection terminal portion in the manufacturing process of the first or fifth embodiment of the present invention.

【図9】本発明の第1実施例又は第5実施例の製造工程
における突起状電極と接続端子部の半田との断面図であ
る。
FIG. 9 is a cross-sectional view of the protruding electrode and the solder of the connection terminal portion in the manufacturing process of the first embodiment or the fifth embodiment of the present invention.

【図10】本発明の第1実施例における突起状電極に加
えられる圧力と温度の時間変化を示すグラフである。
FIG. 10 is a graph showing changes with time of pressure and temperature applied to the protruding electrodes in the first example of the present invention.

【図11】本発明の第2実施例によるLEDプリントヘ
ッドの製造方法の動作を示す図である。
FIG. 11 is a view showing an operation of the method for manufacturing the LED print head according to the second embodiment of the present invention.

【図12】本発明の第2実施例によるLEDプリントヘ
ッドの製造方法の動作を示す図である。
FIG. 12 is a view showing the operation of the method for manufacturing the LED print head according to the second embodiment of the present invention.

【図13】本発明の第2実施例によるLEDプリントヘ
ッドの製造方法の動作を示す図である。
FIG. 13 is a diagram showing an operation of the method for manufacturing the LED print head according to the second embodiment of the present invention.

【図14】本発明の第2実施例によるLEDプリントヘ
ッドの製造方法の動作を示す図である。
FIG. 14 is a view showing an operation of the method for manufacturing the LED print head according to the second embodiment of the present invention.

【図15】本発明の第2実施例の製造工程における突起
状電極と接続端子部の半田との断面図である。
FIG. 15 is a cross-sectional view of the protruding electrode and the solder of the connection terminal portion in the manufacturing process of the second embodiment of the present invention.

【図16】本発明の第2実施例の製造工程における突起
状電極と接続端子部の半田との断面図である。
FIG. 16 is a cross-sectional view of the protruding electrode and the solder of the connection terminal portion in the manufacturing process of the second embodiment of the present invention.

【図17】本発明の第2実施例の製造工程における突起
状電極と接続端子部の半田との断面図である。
FIG. 17 is a cross-sectional view of the protruding electrode and the solder of the connection terminal portion in the manufacturing process of the second embodiment of the present invention.

【図18】本発明の第2実施例の製造工程における突起
状電極と接続端子部の半田との断面図である。
FIG. 18 is a cross-sectional view of the protruding electrode and the solder of the connection terminal portion in the manufacturing process of the second embodiment of the present invention.

【図19】本発明の第2実施例の製造工程における突起
状電極と接続端子部の半田との断面図である。
FIG. 19 is a cross-sectional view of the protruding electrode and the solder of the connection terminal portion in the manufacturing process of the second embodiment of the present invention.

【図20】本発明の第2実施例における突起状電極に加
えられる圧力と温度の時間変化を示すグラフである。
FIG. 20 is a graph showing changes over time in pressure and temperature applied to the protruding electrodes in the second example of the present invention.

【図21】本発明の第3実施例によるLEDプリントヘ
ッドの製造方法の動作を示す図である。
FIG. 21 is a view showing the operation of the method for manufacturing the LED print head according to the third embodiment of the present invention.

【図22】本発明の第4実施例によるLEDプリントヘ
ッドの製造方法の動作を示す図である。
FIG. 22 is a view showing an operation of the method for manufacturing the LED print head according to the fourth embodiment of the present invention.

【図23】本発明の第5実施例における突起状電極に加
えられる圧力と温度の時間変化を示す図である。
FIG. 23 is a diagram showing changes over time in pressure and temperature applied to the protruding electrodes in the fifth example of the present invention.

【図24】本発明の第1実施例及び第5実施例における
半導体装置回路基板上の温度分布を示す図である。
FIG. 24 is a diagram showing a temperature distribution on the semiconductor device circuit board in the first and fifth embodiments of the present invention.

【図25】従来のLEDプリントヘッドの製造方法の動
作を示す図である。
FIG. 25 is a diagram showing an operation of a conventional method for manufacturing an LED print head.

【符号の説明】 1 LEDアレイチップ(半導体素子) 2 一導体型半導体基板(半導体素子基板) 3 アルミ電極 4 突起状電極(電極部) 5 LEDプリントヘッド(半導体装置) 6 透明な絶縁性基板(半導体装置回路基板) 7 導体パターン 8 接続部端子 9 加圧・加熱ツール 10 ステージ 13 アルミ電極 15 導体パターン 17 加圧・加熱ツール 27 加圧・加熱ツール[Explanation of Codes] 1 LED array chip (semiconductor element) 2 One-conductor type semiconductor substrate (semiconductor element substrate) 3 Aluminum electrode 4 Protruding electrode (electrode part) 5 LED print head (semiconductor device) 6 Transparent insulating substrate ( Semiconductor device circuit board) 7 Conductor pattern 8 Connection terminal 9 Pressurization / heating tool 10 Stage 13 Aluminum electrode 15 Conductor pattern 17 Pressurization / heating tool 27 Pressurization / heating tool

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 複数の半田で被覆された接続端子部を備
えた導体パターンがある半導体装置回路基板上に、前記
複数の半田で被覆された接続端子部に対応する複数の電
極部を表面に有する一つ以上の半導体素子基板を、前記
複数の半田で被覆された接続端子部と前記複数の電極部
とが対向接触するように載置し、上に向いた前記半導体
素子基板の裏面に、加圧・加熱ツールを当接し、加圧・
加熱ツールの加圧と加熱とを、前記半導体素子基板を介
して前記半田に加え、前記半田を融解して半田付けする
ことを特徴とする半導体装置の製造方法。
1. A plurality of electrode portions corresponding to the connection terminal portions covered with the plurality of solders are formed on a surface of a semiconductor device circuit board having a conductor pattern having the connection terminal portions covered with the plurality of solders. Having one or more semiconductor element substrate, the connection terminal portion covered with the plurality of solder and the plurality of electrode portions are placed so as to face each other, on the back surface of the semiconductor element substrate facing upward, Apply pressure / heating tool
A method of manufacturing a semiconductor device, wherein pressurization and heating of a heating tool are applied to the solder via the semiconductor element substrate, and the solder is melted and soldered.
【請求項2】 複数の接続端子部を備えた導体パターン
がある半導体装置回路基板上に、前記複数の接続端子部
に対応する複数の半田で被覆された電極部を表面に有す
る一つ以上の半導体素子基板を、前記複数の接続端子部
と前記複数の半田で被覆された電極部とが対向接触する
ように載置し、上に向いた前記半導体素子基板の裏面
に、加圧・加熱ツールを当接し、加圧・加熱ツールの加
圧と加熱とを、前記半導体素子基板を介して前記半田に
加え、前記半田を融解して半田付けすることを特徴とす
る半導体装置の製造方法。
2. A semiconductor device circuit board having a conductor pattern provided with a plurality of connection terminal portions, and at least one electrode surface covered with a plurality of solder portions corresponding to the plurality of connection terminal portions. A semiconductor element substrate is placed so that the plurality of connection terminal portions and the electrode portions covered with the plurality of solders face each other, and a pressing / heating tool is placed on the back surface of the semiconductor element substrate facing upward. And applying pressure and heat of a pressing / heating tool to the solder via the semiconductor element substrate, and melting and soldering the solder.
【請求項3】 加圧・加熱ツールは、半田が融解した後
は加熱を停止し、半田が凝固するまで加圧する請求項1
又は2記載の半導体装置の製造方法。
3. The pressurizing / heating tool stops heating after the solder is melted and pressurizes until the solder is solidified.
Alternatively, the method for manufacturing the semiconductor device according to the item 2.
【請求項4】 加圧・加熱ツールは、半田が融解した後
は、加圧と加熱を同時に停止する請求項1又は2記載の
半導体装置の製造方法。
4. The method of manufacturing a semiconductor device according to claim 1, wherein the pressing / heating tool simultaneously stops pressing and heating after the solder is melted.
【請求項5】 加圧・加熱ツールは、複数個あり、加圧
・加熱ツールが一対一で半導体素子基板を加圧・加熱す
る請求項1、2、3又は4記載の半導体装置の製造方
法。
5. The method of manufacturing a semiconductor device according to claim 1, wherein there are a plurality of pressing / heating tools, and the pressing / heating tools press and heat the semiconductor element substrate in a one-to-one manner. .
【請求項6】 加圧・加熱ツールは、一個の加圧・加熱
ツールが複数の半導体素子基板を加圧・加熱する請求項
1、2、3又は4記載の半導体装置の製造方法。
6. The method of manufacturing a semiconductor device according to claim 1, wherein the pressing / heating tool presses / heats a plurality of semiconductor element substrates by one pressing / heating tool.
【請求項7】 半導体装置回路基板を加熱ステージ上に
固定する請求項1、2、3、4、5又は6記載の半導体
装置の製造方法。
7. The method for manufacturing a semiconductor device according to claim 1, 2, 3, 4, 5, or 6, wherein the semiconductor device circuit board is fixed on a heating stage.
【請求項8】 加熱ステージの温度は、半田の融点より
も低い請求項7記載の半導体装置の製造方法。
8. The method of manufacturing a semiconductor device according to claim 7, wherein the temperature of the heating stage is lower than the melting point of the solder.
JP13822993A 1993-06-10 1993-06-10 Manufacture of semiconductor device Pending JPH06349892A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13822993A JPH06349892A (en) 1993-06-10 1993-06-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13822993A JPH06349892A (en) 1993-06-10 1993-06-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH06349892A true JPH06349892A (en) 1994-12-22

Family

ID=15217112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13822993A Pending JPH06349892A (en) 1993-06-10 1993-06-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH06349892A (en)

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JP2003008083A (en) * 2001-05-15 2003-01-10 Lumileds Lighting Us Llc Multiple chip semiconductor led assembly
US6589818B2 (en) 1995-05-18 2003-07-08 Hitachi. Ltd. Method for mounting a thin semiconductor device
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US10217675B2 (en) 2013-02-28 2019-02-26 A.B. Mikroelektronik Gesellschaft Mit Beschraenkter Haftung Placement method for circuit carrier and circuit carrier
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