JPH06310399A - Projection aligner - Google Patents

Projection aligner

Info

Publication number
JPH06310399A
JPH06310399A JP5100621A JP10062193A JPH06310399A JP H06310399 A JPH06310399 A JP H06310399A JP 5100621 A JP5100621 A JP 5100621A JP 10062193 A JP10062193 A JP 10062193A JP H06310399 A JPH06310399 A JP H06310399A
Authority
JP
Japan
Prior art keywords
exposure
substrate
magnification
stage
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5100621A
Other languages
Japanese (ja)
Other versions
JP3309871B2 (en
Inventor
Yuji Imai
裕二 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP10062193A priority Critical patent/JP3309871B2/en
Publication of JPH06310399A publication Critical patent/JPH06310399A/en
Priority to JP2000116479A priority patent/JP3375076B2/en
Application granted granted Critical
Publication of JP3309871B2 publication Critical patent/JP3309871B2/en
Priority to US10/268,907 priority patent/US6753948B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To enable a projection align of slit scan exposure system to be separately corrected in projection magnification in both a scanning direction wherein a scanning operation is performed from a reticle to a wafer and a non-scanning direction. CONSTITUTION:An imaging characteristics correcting means which corrects a projection optical system 18 in projection magnification and a stage relative speed correcting means which corrects the relative speed of a reticle 11 to a wafer 19 are provided, and the projection optical system 18 is corrected in magnification error in a direction vertical to the scanning direction (X-direction) by the imaging characteristics correcting means and a scanning direction by controlling the relative speed (beta0+alpha) of the wafer 19 to the reticle 11.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、例えばパルス光源又は
連続発光光源からの露光光により矩形又は円弧状等の照
明領域を照明し、その照明領域に対してマスク及び感光
基板を同期して走査することにより、マスク上のパター
ンを逐次感光基板上に露光する所謂スリットスキャン露
光方式の投影露光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention illuminates a rectangular or arcuate illumination area with exposure light from, for example, a pulse light source or a continuous emission light source, and scans the mask and the photosensitive substrate in synchronization with the illumination area. By doing so, the present invention relates to a so-called slit scan exposure type projection exposure apparatus that sequentially exposes a pattern on a mask onto a photosensitive substrate.

【０００２】[0002]

【従来の技術】従来より、半導体素子、液晶表示素子又
は薄膜磁気ヘッド等をフォトリソグラフィー技術を用い
て製造する際に、フォトマスク又はレチクル（以下、
「レチクル」と総称する）のパターンを投影光学系を介
して、フォトレジスト等が塗布されたウエハ又はガラス
プレート等の基板上に投影露光する投影露光装置が使用
されている。最近は、半導体素子等の１個のチップパタ
ーンが大型化する傾向にあり、投影露光装置において
は、レチクル上のより大きな面積のパターンを感光基板
上に露光するという大面積化が求められている。2. Description of the Related Art Conventionally, when a semiconductor element, a liquid crystal display element, a thin film magnetic head or the like is manufactured by using a photolithography technique, a photomask or a reticle (hereinafter, referred to as
There is used a projection exposure apparatus for projecting and exposing a pattern of “reticle” through a projection optical system onto a substrate such as a wafer or a glass plate coated with photoresist or the like. Recently, one chip pattern such as a semiconductor element tends to increase in size, and a projection exposure apparatus is required to have a larger area by exposing a pattern having a larger area on a reticle onto a photosensitive substrate. .

【０００３】また、半導体素子等のパターンが微細化す
るのに応じて、投影光学系の解像力の向上も求められて
いるが、投影光学系の解像力を向上するためには、投影
光学系の露光フィールドを大きくすることが設計上及び
製造上困難であるという問題がある。特に、投影光学系
として、反射屈折系を使用するような場合には、無収差
の露光フィールドの形状が円弧状の領域となることもあ
る。Further, as the pattern of semiconductor elements and the like becomes finer, it is also required to improve the resolution of the projection optical system. In order to improve the resolution of the projection optical system, exposure of the projection optical system is required. There is a problem that it is difficult to increase the field in terms of design and manufacturing. In particular, when a catadioptric system is used as the projection optical system, the aberration-free exposure field may have an arcuate region.

【０００４】斯かる被転写パターンの大面積化及び投影
光学系の露光フィールドの制限に対応するために、例え
ば矩形、円弧状又は６角形等の照明領域（これを「スリ
ット状の照明領域」という）に対してレチクル及び感光
性の基板を同期して走査することにより、レチクル上の
そのスリット状の照明領域より広い面積のパターンを基
板上に逐次投影露光する所謂スリットスキャン露光方式
の投影露光装置が提案されている。In order to cope with such an increase in the area of the transferred pattern and the limitation of the exposure field of the projection optical system, for example, a rectangular, arcuate or hexagonal illumination area (this is called a "slit-shaped illumination area"). ), The reticle and the photosensitive substrate are synchronously scanned to sequentially project and expose a pattern having a larger area than the slit-shaped illumination area on the reticle onto the substrate by a so-called slit scan exposure type projection exposure apparatus. Is proposed.

【０００５】[0005]

【発明が解決しようとする課題】一般に半導体素子等
は、基板上に多数層の回路パターンを積み重ねて形成さ
れると共に、前のレイアの回路パターンの露光を行った
投影露光装置の倍率誤差と、今回のレイアの回路パター
ンの露光を行う投影露光装置の倍率誤差とが所定の許容
値を超えて相違すると、マッチング精度が悪化して半導
体素子等の歩留まりが低下する。また、露光後の種々の
プロセスにより基板上の前のレイアのチップパターンが
伸縮し、倍率が変化している場合もある。Generally, a semiconductor element or the like is formed by stacking a large number of layers of circuit patterns on a substrate, and a magnification error of a projection exposure apparatus that has exposed the circuit pattern of the previous layer, If the magnification error of the projection exposure apparatus that exposes the layer circuit pattern this time exceeds a predetermined allowable value, the matching accuracy deteriorates, and the yield of semiconductor elements and the like decreases. Also, the chip pattern of the previous layer on the substrate may expand and contract due to various processes after exposure, and the magnification may change.

【０００６】そこで、従来のステッパーのように基板上
の各ショット領域へレチクルのパターン像をそれぞれ一
括して露光する投影露光装置では、露光前に基板上のチ
ップパターンの所定の方向（これを「Ｘ方向」とする）
及びこれに垂直なＹ方向の倍率誤差（スケーリングパラ
メータ）を求め、それに応じて投影光学系のＸ方向及び
Ｙ方向の倍率誤差を補正して露光を行う方法も使用され
ている。Therefore, in a projection exposure apparatus that collectively exposes a pattern image of a reticle to each shot area on a substrate like a conventional stepper, a predetermined direction of a chip pattern on the substrate (this is "X direction")
Also, a method of obtaining a magnification error (scaling parameter) in the Y direction perpendicular to this and correcting the magnification error in the X direction and the Y direction of the projection optical system in accordance therewith and performing exposure is also used.

【０００７】これに対して、上記の如き従来のスリット
スキャン露光方式の投影露光装置においては、単に投影
光学系だけで倍率誤差を補正した場合には、走査方向に
垂直な非走査方向の倍率誤差の補正はできても、走査方
向の倍率誤差は十分に補正できないという不都合があっ
た。また、従来のスリットスキャン露光方式の投影露光
装置においては、スリット状の照明領域の走査方向の幅
と非走査方向の幅とが異なるため、投影光学系での露光
光吸収による熱分布の偏り、及び基板上での走査方向と
非走査方向とのショットサイズの違い等により、各ショ
ット領域内の走査方向と非走査方向との倍率誤差に差が
生じ易い傾向がある。従って、特に走査方向及び非走査
方向の倍率誤差を独立に補正できることが望まれてい
る。On the other hand, in the conventional slit scan exposure type projection exposure apparatus as described above, when the magnification error is simply corrected by the projection optical system, the magnification error in the non-scanning direction perpendicular to the scanning direction is obtained. However, there is an inconvenience that the magnification error in the scanning direction cannot be corrected sufficiently. Further, in the conventional slit scan exposure type projection exposure apparatus, since the width in the scanning direction and the width in the non-scanning direction of the slit-shaped illumination area are different, the deviation of the heat distribution due to the absorption of exposure light in the projection optical system, Also, due to the difference in shot size between the scanning direction and the non-scanning direction on the substrate, there is a tendency that a difference in magnification error between the scanning direction and the non-scanning direction in each shot area easily occurs. Therefore, it is desired to be able to independently correct the magnification error especially in the scanning direction and the non-scanning direction.

【０００８】本発明は斯かる点に鑑み、スリットスキャ
ン露光方式の投影露光装置において、レチクルから基板
への走査方向の投影倍率と、レチクルから基板への非走
査方向の投影倍率とをそれぞれ独立に補正できるように
することを目的とする。In view of the above-mentioned problems, the present invention provides a slit-scan exposure type projection exposure apparatus, in which the projection magnification in the scanning direction from the reticle to the substrate and the projection magnification in the non-scanning direction from the reticle to the substrate are independent of each other. The purpose is to be able to correct.

【０００９】[0009]

【課題を解決するための手段】本発明による投影露光装
置は、例えば図１に示すように、露光光で所定形状の照
明領域（３７）を照明する照明光学系（１〜１０）と、
照明領域（３７）に対して転写用のパターンが形成され
たマスク（１１）を所定の走査方向（−Ｘ方向）に走査
するマスクステージ（１２）と、照明領域（３７）内の
マスク（１１）のパターン像を感光性の基板（１９）上
に投影する投影光学系（１８）と、基板（１９）を保持
して基板（１９）をマスク（１１）の走査と同期してそ
の走査方向と共役な方向（Ｘ方向）に走査する基板ステ
ージ（２１）とを有し、所定形状の照明領域（３７）に
対してマスク（１１）及び基板（１９）を相対的に走査
することにより、マスク（１１）のパターン像を逐次基
板（１９）上に露光する装置である。A projection exposure apparatus according to the present invention comprises, for example, as shown in FIG. 1, an illumination optical system (1-10) for illuminating an illumination area (37) having a predetermined shape with exposure light,
A mask stage (12) for scanning a mask (11) having a transfer pattern formed on the illumination area (37) in a predetermined scanning direction (-X direction), and a mask (11) in the illumination area (37). ) A projection optical system (18) for projecting a pattern image on a photosensitive substrate (19), and a scanning direction of the substrate (19) holding the substrate (19) in synchronization with the scanning of the mask (11). And a substrate stage (21) for scanning in a direction (X direction) conjugate with the scanning direction, and by relatively scanning the mask (11) and the substrate (19) with respect to an illumination region (37) of a predetermined shape, This is an apparatus for sequentially exposing the pattern image of the mask (11) on the substrate (19).

【００１０】そして、本発明は、投影光学系（１８）の
投影倍率を補正する結像特性補正手段（３４，３５，３
６）と、マスクステージ（１２）と基板ステージ（２
１）との相対速度を補正するステージ相対速度補正手段
（１６，１７，２５）とを設け、投影光学系（１８）の
その走査方向に垂直な方向の倍率誤差を結像特性補正手
段（３４，３５，３６）により補正し、投影光学系（１
８）の走査方向（Ｘ方向）の倍率誤差をステージ相対速
度補正手段（１６，１７，２５）によりマスクステージ
（１２）と基板ステージ（２１）との相対速度を調整し
て補正するものである。Then, according to the present invention, the image forming characteristic correcting means (34, 35, 3) for correcting the projection magnification of the projection optical system (18).
6), the mask stage (12) and the substrate stage (2
The stage relative speed correction means (16, 17, 25) for correcting the relative speed with respect to 1) is provided, and the magnification error in the direction perpendicular to the scanning direction of the projection optical system (18) is corrected to the imaging characteristic correction means (34). , 35, 36) and the projection optical system (1
8) The magnification error in the scanning direction (X direction) is corrected by adjusting the relative speed between the mask stage (12) and the substrate stage (21) by the stage relative speed correction means (16, 17, 25). .

【００１１】この場合、その露光光の単位面積及び単位
時間当りの露光エネルギーを調整する露光量制御手段
（１６，２６〜２９）を設け、マスクステージ（１２）
と基板ステージ（２１）との相対速度が調整されたとき
に、基板（１９）に対する露光量が目標露光量になるよ
うにその露光量制御手段でその露光光の露光エネルギー
を調整することが望ましい。In this case, the exposure amount control means (16, 26 to 29) for adjusting the unit area of the exposure light and the exposure energy per unit time is provided, and the mask stage (12) is provided.
When the relative speed between the substrate and the substrate stage (21) is adjusted, it is desirable to adjust the exposure energy of the exposure light by the exposure amount control means so that the exposure amount for the substrate (19) becomes the target exposure amount. .

【００１２】[0012]

【作用】斯かる本発明のスリットスキャン露光方式の投
影露光装置では、例えば予め基板（１９）上に既に形成
されているチップパターンの走査方向及び非走査方向の
倍率変化を実測しておく。そして、投影光学系の非走査
方向の投影倍率をその実測された非走査方向の倍率変化
に合わせて補正する。その投影光学系の投影倍率を補正
するための結像特性補正手段としては、例えば投影光学
系（１８）の一部のレンズ間隔を制御するか、又は一部
のレンズ間の密閉空間内の気体の圧力若しくは温度を制
御する手段等を用いることができる。In the projection exposure apparatus of the slit scan exposure system of the present invention, the change in magnification in the scanning direction and the non-scanning direction of the chip pattern already formed on the substrate (19) is measured in advance. Then, the projection magnification in the non-scanning direction of the projection optical system is corrected in accordance with the actually measured change in the magnification in the non-scanning direction. As the image forming characteristic correcting means for correcting the projection magnification of the projection optical system, for example, a lens interval of a part of the projection optical system (18) is controlled, or a gas in a closed space between the lenses is used. Means for controlling the pressure or temperature of the above can be used.

【００１３】また、走査方向でのマスク（１１）から基
板（１９）への本来の投影倍率をβ 0 とした場合、マス
クステージ（１２）を介してのマスク（１１）の走査方
向（これを「−Ｘ方向」とする）への走査速度をＶとす
ると、基板ステージ（２１）を介しての基板（１９）の
Ｘ方向への走査速度はβ0・Ｖとなる。このように投影倍
率をβ0 とすると、スリットスキャン露光時のマスクス
テージ（１２）に対する基板ステージ（２１）の相対速
度は、β0 となる。そこで、基板（１９）上のチップパ
ターンの走査方向の倍率誤差がαである場合、本発明で
はスリットスキャン露光時のマスクステージ（１２）に
対する基板ステージ（２１）の相対速度を、（β0+α）
とする。これにより、マスク（１１）から基板（１９）
に対する走査方向及び非走査方向の倍率を、既に形成さ
れているチップパターンの倍率に正確に合わせることが
できる。Further, the mask (11) in the scanning direction is used as a base.
The original projection magnification on the plate (19) is β 0And if the trout
How to scan the mask (11) through the crest (12)
Let V be the scanning speed in the opposite direction (this is the "-X direction").
Then, the substrate (19) is transferred through the substrate stage (21).
The scanning speed in the X direction is β0・ V. Projection times like this
Rate β0Then, the mask mask for slit scan exposure
Relative speed of the substrate stage (21) to the tage (12)
The degree is β0Becomes Therefore, the chip pattern on the substrate (19) is
In the present invention, when the magnification error in the scanning direction of the turn is α,
On the mask stage (12) during slit scan exposure
The relative speed of the substrate stage (21) with respect to (β0+ α)
And Thereby, the mask (11) to the substrate (19)
The scanning and non-scanning magnifications for
Can be accurately adjusted to the magnification of the chip pattern
it can.

【００１４】また、マスク（１１）に対する基板（１
９）の相対速度がβ0 から外れると、基板（１９）上の
各点での露光光の照射時間が変化し、露光エネルギーを
補正しないと各点での積算露光量が目標露光量からずれ
てしまう。そこで、その露光光の単位面積及び単位時間
当りの露光エネルギーを調整する露光量制御手段（１
６，２６〜２９）を設け、マスクステージ（１２）と基
板ステージ（２１）との相対速度が調整されたときに、
基板（１９）に対する露光量が目標露光量になるように
その露光量制御手段でその露光光の露光エネルギーを調
整する。これにより、走査方向の倍率誤差を調整した場
合でも、積算露光量が常に目標露光量に設定される。The substrate (1) for the mask (11)
When the relative speed of 9) deviates from β 0, the irradiation time of the exposure light at each point on the substrate (19) changes, and the integrated exposure amount at each point deviates from the target exposure amount unless the exposure energy is corrected. Will end up. Therefore, an exposure amount control means (1) for adjusting the unit area of the exposure light and the exposure energy per unit time.
6, 26-29) and the relative speed between the mask stage (12) and the substrate stage (21) is adjusted,
The exposure energy of the exposure light is adjusted by the exposure amount control means so that the exposure amount for the substrate (19) becomes the target exposure amount. As a result, the integrated exposure amount is always set to the target exposure amount even when the magnification error in the scanning direction is adjusted.

【００１５】[0015]

【実施例】以下、本発明の一実施例につき図面を参照し
て説明する。本実施例は、光源としてエキシマレーザ光
源等のパルス発振型の露光光源を有するスリットスキャ
ン露光方式の投影露光装置に本発明を適用したものであ
る。図１は本例の投影露光装置の構成を示し、この図１
において、エキシマレーザ光源等のパルス発振型の光源
１から射出されたレーザビームは、シリンダーレンズや
ビームエクスパンダ等で構成されるビーム整形光学系２
により、後続のフライアイレンズ４に効率よく入射する
ようにビームの断面形状が整形される。ビーム整形光学
系２から射出されたレーザビームは、ミラー３を経てフ
ライアイレンズ４に入射する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. In this embodiment, the present invention is applied to a slit scan exposure type projection exposure apparatus having a pulse oscillation type exposure light source such as an excimer laser light source as a light source. FIG. 1 shows the configuration of the projection exposure apparatus of this example.
In the above, a laser beam emitted from a pulse oscillation type light source 1 such as an excimer laser light source is a beam shaping optical system 2 including a cylinder lens, a beam expander and the like.
As a result, the cross-sectional shape of the beam is shaped so as to efficiently enter the subsequent fly-eye lens 4. The laser beam emitted from the beam shaping optical system 2 enters the fly-eye lens 4 via the mirror 3.

【００１６】フライアイレンズ４から射出されたレーザ
ビームは、反射率が小さく透過率の大きなビームスプリ
ッター５に入射し、ビームスプリッター５を通過したレ
ーザビームは、第１リレーレンズ６により視野絞り７上
を均一な照度で照明する。本実施例の視野絞り７の開口
部の形状は長方形である。視野絞り７を通過したレーザ
ビームは、第２リレーレンズ８、折り曲げミラー９及び
メインコンデンサーレンズ１０を経て、レチクルステー
ジ１２上のレチクル１１を均一な照度で照明する。視野
絞り７とレチクル１１のパターン形成面とは共役であ
り、視野絞り７の開口部と共役なレチクル１１上の長方
形のスリット状の照明領域３７にレーザビームが照射さ
れる。後述の投影光学系１８の光軸に平行にＺ軸をと
り、その光軸に垂直な平面内で照明領域３７に対するレ
チクルＲの走査方向をＸ方向（又は−方向）とする。Ｘ
方向は図１の紙面に平行な方向でもある。The laser beam emitted from the fly-eye lens 4 is incident on the beam splitter 5 having a small reflectance and a large transmittance, and the laser beam passing through the beam splitter 5 is passed through the first relay lens 6 and then onto the field stop 7. Illuminate with a uniform illuminance. The shape of the opening of the field stop 7 of this embodiment is rectangular. The laser beam that has passed through the field stop 7 passes through the second relay lens 8, the bending mirror 9 and the main condenser lens 10, and illuminates the reticle 11 on the reticle stage 12 with uniform illuminance. The field stop 7 and the pattern formation surface of the reticle 11 are conjugate with each other, and the rectangular slit-shaped illumination area 37 on the reticle 11 which is conjugate with the opening of the field stop 7 is irradiated with the laser beam. A Z axis is set in parallel with an optical axis of a projection optical system 18 described later, and a scanning direction of the reticle R with respect to the illumination area 37 in a plane perpendicular to the optical axis is defined as an X direction (or − direction). X
The direction is also a direction parallel to the paper surface of FIG.

【００１７】レチクルステージ１２を、レチクル支持台
１３上にＸ方向に沿って摺動自在に支持し、レチクルス
テージ１２のＸ方向の端部に移動鏡１４を固定する。外
部のレーザ干渉計１５からの測長ビームが移動鏡１４で
反射され、レチクルステージ１２のＸ方向の座標がレー
ザ干渉計１５により常時モニターされている。レーザ干
渉計１５により計測された座標は、装置全体の動作を制
御する主制御系１６に供給され、主制御系１６はレチク
ルステージ制御部１７を介してレチクルステージ１２の
Ｘ方向の動きを制御する。The reticle stage 12 is slidably supported on the reticle support 13 along the X direction, and the movable mirror 14 is fixed to the end of the reticle stage 12 in the X direction. The measurement beam from the external laser interferometer 15 is reflected by the movable mirror 14, and the coordinates of the reticle stage 12 in the X direction are constantly monitored by the laser interferometer 15. The coordinates measured by the laser interferometer 15 are supplied to a main control system 16 that controls the operation of the entire apparatus, and the main control system 16 controls the movement of the reticle stage 12 in the X direction via a reticle stage control unit 17. .

【００１８】レチクル１１上のスリット状の照明領域３
７内のパターン像を、投影光学系１８を介してウエハ１
９上の露光領域３８に投影露光する。ウエハ１９をウエ
ハホルダー２０を介して、少なくともＸ方向に走査可能
なＸＹステージ２１上に載置する。図示省略するも、Ｘ
Ｙステージ２１とウエハホルダー２０との間には、ウエ
ハ１９をＺ方向に位置決めするＺステージ等を装着す
る。スリットスキャン露光時には、レチクル１１がレチ
クルステージ１２によりＸ方向（又は−Ｘ方向）に走査
されるのに同期して、ＸＹステージ１８を介してウエハ
１９は−Ｘ方向（又はＸ方向）に走査される。投影光学
系１８のレチクル１１からウエハ１９への投影倍率をβ
0 （β0 は例えば１／５，１／４等）として、ウエハ１
９上に既に形成されているチップパターンの倍率変化が
無いものとすると、レチクル１１がＸ方向に速度Ｖで走
査されるのに同期して、ウエハ１９は−Ｘ方向に速度β
0・Ｖで走査される。この場合、レチクル１１に対するウ
エハ１９の相対速度はβ0 である。A slit-shaped illumination area 3 on the reticle 11
The pattern image in 7 is transferred to the wafer 1 via the projection optical system 18.
Projection exposure is performed on the exposure area 38 on the upper surface 9. The wafer 19 is placed via a wafer holder 20 on an XY stage 21 that can scan at least in the X direction. Although not shown, X
A Z stage or the like for positioning the wafer 19 in the Z direction is mounted between the Y stage 21 and the wafer holder 20. During slit scan exposure, the wafer 19 is scanned in the −X direction (or X direction) via the XY stage 18 in synchronization with the scanning of the reticle 11 by the reticle stage 12 in the X direction (or −X direction). It The projection magnification of the projection optical system 18 from the reticle 11 to the wafer 19 is β
0 (β 0 is, for example, ⅕, ¼, etc.)
Assuming that there is no change in the magnification of the chip pattern already formed on the wafer 9, the wafer 19 moves in the -X direction at the speed β in synchronization with the scanning of the reticle 11 at the speed V in the X direction.
It is scanned with 0 · V. In this case, the relative speed of the wafer 19 with respect to the reticle 11 is β 0 .

【００１９】ＸＹステージ２１上に、アライメント用の
種々の基準マークが形成された基準マーク部材２２及び
移動鏡２３を固定する。外部のレーザ干渉計２４からの
測長ビームが移動鏡２３で反射され、ＸＹステージ２１
のＸ方向及びＸ方向に垂直なＹ方向の座標がレーザ干渉
計２４により常時モニターされている。レーザ干渉計２
４により計測された２次元座標は主制御系１６に供給さ
れ、主制御系１６はウエハステージ制御部２５を介して
ＸＹステージ２１のＸ方向及びＹ方向の動きを制御す
る。また、図示省略するも、投影光学系１８の側面には
ウエハ１９のＺ方向の高さ（フォーカス位置）を検出す
るフォーカスセンサーが配設され、主制御系１６は、フ
ォーカスセンサーの計測結果に応じてＺステージ（不図
示）を介してウエハ１９の露光面の高さをベストフォー
カス位置に設定する。A reference mark member 22 having various reference marks for alignment and a movable mirror 23 are fixed on the XY stage 21. The measurement beam from the external laser interferometer 24 is reflected by the movable mirror 23, and the XY stage 21
The laser interferometer 24 constantly monitors the X-direction and the Y-direction coordinates perpendicular to the X-direction. Laser interferometer 2
The two-dimensional coordinates measured by 4 are supplied to the main control system 16, and the main control system 16 controls the movement of the XY stage 21 in the X and Y directions via the wafer stage control unit 25. Although not shown, a focus sensor that detects the height (focus position) of the wafer 19 in the Z direction is arranged on the side surface of the projection optical system 18, and the main control system 16 responds to the measurement result of the focus sensor. Then, the height of the exposure surface of the wafer 19 is set to the best focus position via the Z stage (not shown).

【００２０】また、ビームスプリッター５で反射された
レーザビームを、受光素子２６で受光し、受光素子２６
の検出信号を増幅器２７を介して露光量モニター部２８
に供給する。露光量モニター部２８は、増幅器２７から
の信号を積算し、この積算結果を主制御系１６に供給す
る。受光素子２６での検出信号と、ウエハ１９の露光面
での露光エネルギーとの対応関係は予め求められてお
り、主制御系１６は、露光量モニター部２８からの信号
よりウエハ１９の露光面での積算露光量を知ることがで
きる。主制御系１６は、トリガー制御部２９を介して光
源１の発振のタイミング及び発振周波数を制御し、不図
示の電源制御部を介して光源１から発光される各パルス
光の光量を制御する。Further, the laser beam reflected by the beam splitter 5 is received by the light receiving element 26,
Of the detection signal of the exposure amount through the amplifier 27
Supply to. The exposure amount monitor unit 28 integrates the signals from the amplifier 27 and supplies the integration result to the main control system 16. The correspondence relationship between the detection signal of the light receiving element 26 and the exposure energy on the exposure surface of the wafer 19 is obtained in advance, and the main control system 16 uses the signal from the exposure amount monitor 28 to determine the exposure surface of the wafer 19 on the exposure surface. It is possible to know the integrated exposure amount of. The main control system 16 controls the oscillation timing and the oscillation frequency of the light source 1 via the trigger control unit 29, and controls the amount of each pulsed light emitted from the light source 1 via the power supply control unit (not shown).

【００２１】更に、投影光学系１８の走査方向の前後に
オフ・アクシスの画像処理方式のアライメント系（以
下、「ＦＩＡ系」という）３０及び３１を配設する。Ｆ
ＩＡ系３０及び３１はそれぞれ、ウエハ１９上のアライ
メントマークとしてのウエハマークのステージ座標系
（レーザ干渉計２４により計測される座標に基づいて規
定される座標系）での座標を読み取り、読み取った座標
を主制御系１６に供給する。主制御系１６は、ウエハマ
ークの計測された座標を統計処理して、ウエハ１９の各
ショット領域のステージ座標系での配列座標を求め、こ
の配列座標に基づいて各ショット領域の位置決めを行
う。この方式はエンハンスド・グローバル・アライメン
ト（ＥＧＡ）と呼ばれ、例えば特開昭61-44429号公報，
特開昭62-84516号公報等に開示されている。ＥＧＡ方式
はショット配列の規則性に対応したモデル関数の６つの
パラメータを最小二乗法により決定し、この決定したパ
ラメータと設計上の座標値とに基づいてショット領域毎
の座標値を算出するものである。また、この際に、ウエ
ハ１９上に形成されているチップパターンの走査方向
（Ｘ方向）及び非走査方向（Ｙ方向）の伸縮率（スケー
リングパラメータ）が求められる。このことは特願平4-
346072号に詳しく述べられており、ＥＧＡ方式において
最小二乗法により決定される６つのパラメータのうち、
Ｘ方向及びＹ方向のスケーリング（伸縮率）を表す２つ
のパラメータをスケーリングパラメータとして選択す
る。Further, off-axis image processing type alignment systems (hereinafter referred to as "FIA system") 30 and 31 are arranged before and after the projection optical system 18 in the scanning direction. F
The IA systems 30 and 31 respectively read the coordinates of the wafer mark as an alignment mark on the wafer 19 in the stage coordinate system (the coordinate system defined based on the coordinates measured by the laser interferometer 24) and read the coordinates. Is supplied to the main control system 16. The main control system 16 statistically processes the measured coordinates of the wafer mark to obtain array coordinates in the stage coordinate system of each shot area of the wafer 19, and positions each shot area based on the array coordinates. This method is called enhanced global alignment (EGA), and is disclosed in, for example, Japanese Patent Laid-Open No. 61-44429,
It is disclosed in JP-A-62-84516. The EGA method determines the six parameters of the model function corresponding to the regularity of the shot arrangement by the least square method, and calculates the coordinate value for each shot area based on the determined parameters and the design coordinate values. is there. At this time, the expansion / contraction ratios (scaling parameters) of the chip pattern formed on the wafer 19 in the scanning direction (X direction) and the non-scanning direction (Y direction) are obtained. This is Japanese Patent Application No. 4-
As described in detail in 346072, of the six parameters determined by the least squares method in the EGA method,
Two parameters representing scaling (expansion / contraction ratio) in the X and Y directions are selected as scaling parameters.

【００２２】これらスケーリングパラメータより、ウエ
ハ１９上に既に形成されているチップパターンの走査方
向及び非走査方向の倍率変化が求められる。本例では、
このように計測された倍率変化に応じて、後述のように
レチクル１１からウエハ１９への走査方向及び非走査方
向の倍率を補正する。その内の非走査方向の倍率は、倍
率制御部３５が投影光学系１８の所定のレンズ間隔を調
整するか、又は所定のレンズ室の圧力等を調整すること
により調整される。倍率制御部３５の動作も主制御系１
６により制御されている。From these scaling parameters, the magnification change of the chip pattern already formed on the wafer 19 in the scanning direction and the non-scanning direction can be obtained. In this example,
The magnification in the scanning direction and the non-scanning direction from the reticle 11 to the wafer 19 is corrected in accordance with the change in the magnification thus measured, as described later. The magnification in the non-scanning direction is adjusted by the magnification control unit 35 adjusting a predetermined lens interval of the projection optical system 18 or adjusting a predetermined lens chamber pressure or the like. The operation of the magnification control unit 35 is also the main control system 1
Controlled by 6.

【００２３】具体的に、投影光学系１８は、レチクル１
１側から順にレンズ３２Ａ，３２Ｂ，３２Ｃ，３２Ｄ，
‥‥より構成され、最もレチクル１１に近いレンズ３２
Ａと次のレンズ３２Ｂとの間に３個の圧電素子よりなる
アクチュエータ３３Ａ，３３Ｂ，３３Ｃが装着されてい
る。そして、倍率制御部３５からの指示により駆動部３
４がアクチュエータ３３Ａ，３３Ｂ，３３Ｃの厚さを個
別に設定することにより、レンズ３２Ａとレンズ３２Ｂ
との間隔又は傾きが調整され、これにより投影光学系１
８の倍率誤差及び歪曲収差が所定の範囲内で調整され
る。また、投影光学系１８には圧力制御部３６が接続さ
れ、圧力制御部３６は倍率制御部３５からの指示に基づ
いて、投影光学系１８の所定のレンズ間のレンズ室内の
気体の圧力を調整する。このように所定のレンズ室内の
気体の圧力を調整することによっても、投影光学系１８
の倍率誤差を調整できる。なお、所定のレンズ室内の気
体の温度を調整しても良い。Specifically, the projection optical system 18 includes the reticle 1
The lenses 32A, 32B, 32C, 32D, in order from the first side
A lens 32 composed of ... and closest to the reticle 11.
Actuators 33A, 33B and 33C composed of three piezoelectric elements are mounted between A and the next lens 32B. Then, the drive unit 3 is instructed by the magnification control unit 35.
4 individually sets the thickness of the actuators 33A, 33B, and 33C, so that the lenses 32A and 32B
The distance or inclination between the projection optical system 1 and
The magnification error of 8 and the distortion aberration are adjusted within a predetermined range. A pressure control unit 36 is connected to the projection optical system 18, and the pressure control unit 36 adjusts the pressure of the gas in the lens chamber between the predetermined lenses of the projection optical system 18 based on the instruction from the magnification control unit 35. To do. In this way, the projection optical system 18 can also be adjusted by adjusting the pressure of the gas in the predetermined lens chamber.
You can adjust the magnification error. The temperature of the gas in the predetermined lens chamber may be adjusted.

【００２４】次に、本例の投影露光装置において、レチ
クル１１のパターンをスリットスキャン露光方式で逐次
ウエハ１９上に投影露光する際の動作の一例につき説明
する。この場合、ウエハ１９の各ショット領域にはそれ
までのプロセスによりそれぞれ所定のチップパターンが
形成されているものとする。図２は、ウエハ１９の露光
面の一部を示し、この図２に示すように、ウエハ１９上
の各ショット領域ＳＡ１，ＳＡ２，‥‥にはそれぞれチ
ップパターンが形成され、これらチップパターンの上に
重ねてレチクル１１のパターン像がスリットスキャン露
光方式で投影露光される。Next, in the projection exposure apparatus of this example, an example of an operation when the pattern of the reticle 11 is sequentially projected and exposed on the wafer 19 by the slit scan exposure method will be described. In this case, it is assumed that a predetermined chip pattern is formed in each shot area of the wafer 19 by the processes up to that point. FIG. 2 shows a part of the exposed surface of the wafer 19, and as shown in FIG. 2, chip patterns are formed in the shot areas SA1, SA2, ... On the wafer 19, respectively. And the pattern image of the reticle 11 is projected and exposed by the slit scan exposure method.

【００２５】また、各ショット領域ＳＡ１等のＸ方向の
実際の幅はＷＸ1 、Ｙ方向の実際の幅はＷＹ1 であると
し、チップパターンの伸縮率が１であるとした場合の各
ショット領域ＳＡ１Ａ，ＳＡ１Ｂ，‥‥のＸ方向の幅
（設計上の幅）をＷＸ0 、Ｙ方向の幅をＷＹ0 とする。
更に、投影光学系１８の設計上の基準の投影倍率はβ0
であり、ウエハ１９上に形成されているチップパターン
のＸ方向の倍率誤差（伸縮率の変化量）をα、Ｙ方向の
倍率誤差をγとすると、次式が成立する。 β0 ＋α＝β0(ＷＸ1 ／ＷＸ0) （１） β0 ＋γ＝β0(ＷＹ1 ／ＷＹ0) （２）The actual width in the X direction of each shot area SA1, etc. is WX 1 , the actual width in the Y direction is WY 1 , and the expansion / contraction ratio of the chip pattern is 1. The width (designed width) in the X direction of SA1A, SA1B, ... Is WX 0 , and the width in the Y direction is WY 0 .
Further, the design reference projection magnification of the projection optical system 18 is β 0.
When the magnification error in the X direction of the chip pattern formed on the wafer 19 (change amount of expansion / contraction rate) is α and the magnification error in the Y direction is γ, the following equation is established. β 0 + α = β 0 (WX 1 / WX 0 ) (1) β 0 + γ = β 0 (WY 1 / WY 0 ) (2)

【００２６】従って、それら走査方向の倍率誤差α及び
非走査方向の倍率誤差γはそれぞれ次のように表すこと
ができる。 α＝β0(ＷＸ1 ／ＷＸ0 −１） （３） γ＝β0(ＷＹ1 ／ＷＹ0 −１） （４）Therefore, the magnification error α in the scanning direction and the magnification error γ in the non-scanning direction can be expressed as follows. α = β 0 (WX 1 / WX 0 −1) (3) γ = β 0 (WY 1 / WY 0 −1) (4)

【００２７】本例では露光の直前に、図１のＦＩＡ系３
０又は３１を用いて、ウエハ１９の各ショット領域に形
成されているウエハマークのステージ座標系（Ｘ，Ｙ）
での座標位置を計測することにより、それら倍率誤差α
及びγを求める。例えばＥＧＡ方式を適用してウエハ上
のショット領域毎の座標値を算出する際に、最小二乗法
により決定されるＸ，Ｙ方向の２つのスケーリングパラ
メータを倍率誤差α，βとして求める。その後、非走査
方向の倍率誤差γ分だけ、図１の倍率制御部３５を介し
て投影光学系１８の投影倍率β0 を補正する。これによ
り、投影光学系１８の投影倍率は（β0 ＋γ）に設定さ
れる。なお、より望ましいのは、投影光学系１８の走査
方向（Ｘ方向）及び非走査方向（Ｙ方向）の投影倍率を
独立に補正して、走査方向の投影倍率を（β0 ＋α）
に、非走査方向の投影倍率を（β0＋γ）に設定するこ
とであるのは言うまでも無い。In this example, the FIA system 3 shown in FIG.
By using 0 or 31, the stage coordinate system (X, Y) of the wafer mark formed in each shot area of the wafer 19
By measuring the coordinate position at
And γ are obtained. For example, when the coordinate value for each shot area on the wafer is calculated by applying the EGA method, two scaling parameters in the X and Y directions determined by the least square method are obtained as magnification errors α and β. After that, the projection magnification β 0 of the projection optical system 18 is corrected by the magnification control unit 35 of FIG. 1 by the magnification error γ in the non-scanning direction. As a result, the projection magnification of the projection optical system 18 is set to (β 0 + γ). It is more desirable to independently correct the projection magnifications of the projection optical system 18 in the scanning direction (X direction) and the non-scanning direction (Y direction) so that the projection magnification in the scanning direction is (β 0 + α).
Needless to say, the projection magnification in the non-scanning direction is set to (β 0 + γ).

【００２８】次に、投影光学系１８の投影倍率がβ0 で
あるときに、図１のスリット状の照明領域３７と投影光
学系１８に関して共役なスリット状の露光領域を図２の
露光領域３８Ａとすると、その露光領域３８ＡのＹ方向
の最大の幅はＷＹ0 である。そして、投影光学系１８の
非走査方向の投影倍率を（β0 ＋γ）に設定することに
より、その露光領域３８Ａは非走査方向の最大の幅がＷ
Ｙ1 の露光領域３８になる。その露光領域３８に対して
Ｘ方向にウエハ１９を走査して露光を行うことにより、
非走査方向の重ね合わせ誤差はほぼ０になる。Next, when the projection magnification of the projection optical system 18 is β 0 , the slit-shaped illumination area 37 in FIG. 1 and the slit-shaped exposure area conjugate with respect to the projection optical system 18 are changed to the exposure area 38A in FIG. Then, the maximum width in the Y direction of the exposure area 38A is WY 0 . By setting the projection magnification of the projection optical system 18 in the non-scanning direction to (β 0 + γ), the maximum width in the non-scanning direction of the exposure area 38A is W.
It becomes the exposure area 38 of Y 1 . By exposing the exposure area 38 by scanning the wafer 19 in the X direction,
The overlay error in the non-scanning direction becomes almost zero.

【００２９】次に、走査方向（Ｘ方向）の倍率誤差αを
補正するために、図１の主制御系１６は、スリットスキ
ャン露光時のレチクル１１の走査速度とウエハ１９の走
査速度との相対速度を補正する。具体的に、図３に示す
ように、レチクル１１をＸ方向に速度Ｖで走査するもの
として、ウエハ１９の−Ｘ方向への走査速度を（β0＋
α）Ｖに設定する。即ち、レチクル１１に対するウエハ
１９の相対速度を（β 0 ＋α）に設定する。Next, the magnification error α in the scanning direction (X direction) is
To compensate, the main control system 16 of FIG.
Scanning speed of reticle 11 and running of wafer 19 during manual exposure
Correct the speed relative to the inspection speed. Specifically, shown in FIG.
To scan the reticle 11 in the X direction at a speed V
, The scanning speed of the wafer 19 in the −X direction is (β0+
α) Set to V. That is, the wafer for the reticle 11
The relative speed of 19 is (β 0+ Α).

【００３０】図３において、走査方向の倍率誤差が０で
あるときに、ウエハ１９上で走査方向の幅がＷＸ0 のシ
ョット領域へ露光を行うためには、レチクル１１上の走
査方向の幅がＷＸ0 ／β0 のパターン領域が使用され
る。そして、走査方向の倍率誤差がαである場合は、ス
リット状の照明領域３７に対してＸ方向にレチクル１１
が幅ＷＸ0 ／β0 だけ走査されるときに、ウエハ１９が
露光領域３８に対して−Ｘ方向に走査される幅をΔＸと
すると、幅ΔＸは次のようになる。 ΔＸ＝｛（ＷＸ0 ／β0)／Ｖ｝（β0 ＋α）Ｖ ＝｛（β0 ＋α）／β0}ＷＸ0 （５）In FIG. 3, when the magnification error in the scanning direction is 0, in order to expose the shot area having the width WX 0 in the scanning direction on the wafer 19, the width in the scanning direction on the reticle 11 is changed. The pattern area of WX 0 / β 0 is used. When the magnification error in the scanning direction is α, the reticle 11 is moved in the X direction with respect to the slit-shaped illumination area 37.
Is scanned by the width WX 0 / β 0 , the width ΔX is as follows, where ΔX is the width by which the wafer 19 is scanned in the −X direction with respect to the exposure region 38. ΔX = {(WX 0 / β 0 ) / V} (β 0 + α) V = {(β 0 + α) / β 0 } WX 0 (5)

【００３１】この（５）式に（１）式を代入すると、Δ
Ｘ＝ＷＸ1 、となり、幅ΔＸは図２の各ショット領域Ｓ
Ａ１等の走査方向の幅ＷＸ1 と合致する。従って、本例
のように走査方向へのウエハ１９の走査速度を（β0 ＋
α）Ｖに設定することで、ウエハ１９上のチップパター
ンの走査方向の倍率誤差がαである場合に、走査方向の
重ね合わせ誤差をほぼ０にすることができる。Substituting equation (1) into equation (5), Δ
X = WX 1 , and the width ΔX is equal to each shot area S in FIG.
It matches the width WX 1 of A1 in the scanning direction. Therefore, the scanning speed of the wafer 19 in the scanning direction is (β 0 +
By setting α) V, when the magnification error of the chip pattern on the wafer 19 in the scanning direction is α, the overlay error in the scanning direction can be made almost zero.

【００３２】なお、上述の倍率誤差α及びγを、図２の
ショット領域ＳＡ１，ＳＡ２，‥‥毎に求めるようにし
ても良い。具体的には、ショット領域の４隅の各々に十
字状マークを形成しておき、各マークのＸ，Ｙ方向の座
標値をＦＩＡ系により計測してショット領域毎の倍率誤
差α，βを求めればよい。そして、スリットスキャン露
光方式で露光を行う際に、１つのショット領域毎に、倍
率制御部３５及びステージ制御部１７，２５を介して非
走査方向の倍率及び走査方向の倍率を制御すれば、ダイ
・バイ・ダイ方式での倍率補正が可能となる。更に、１
つのショット領域内を複数個のブロックに分割し、各ブ
ロック毎に倍率補正を行えば、１つのショット領域全体
で見ればディストーションの補正が可能となる。The magnification errors α and γ may be obtained for each of the shot areas SA1, SA2, ... Of FIG. Specifically, a cross-shaped mark is formed at each of the four corners of the shot area, and the coordinate values in the X and Y directions of each mark are measured by the FIA system to obtain magnification errors α and β for each shot area. Good. Then, when performing exposure by the slit scan exposure method, if the magnification in the non-scanning direction and the magnification in the scanning direction are controlled via the magnification control unit 35 and the stage control units 17 and 25 for each shot area, the die・ By-die method enables magnification correction. Furthermore, 1
If one shot area is divided into a plurality of blocks and magnification correction is performed for each block, distortion can be corrected for the entire shot area.

【００３３】次に、本例の投影露光装置の露光量制御に
ついて説明する。本例の光源１はパルス発振型であるた
め、図１において、スリットスキャン露光時に主制御系
１６は、トリガー制御部２９を介して光源１に所定の周
波数ｆでパルス発振を行わせる。この際に、各パルス光
の平均光量がほぼ一定であるとすると、ウエハ１９の走
査速度が変化するとウエハ１９上の各点での積算露光量
が変化してしまう。Next, the exposure amount control of the projection exposure apparatus of this example will be described. Since the light source 1 of this example is a pulse oscillation type, in FIG. 1, the main control system 16 causes the light source 1 to perform pulse oscillation at a predetermined frequency f via the trigger control unit 29 during slit scan exposure. At this time, if the average light amount of each pulsed light is substantially constant, the integrated exposure amount at each point on the wafer 19 changes when the scanning speed of the wafer 19 changes.

【００３４】図４（ａ）は、ウエハ１９上のスリット状
の露光領域３８の近傍の様子を示し、露光領域３８の走
査方向の幅をＤとする。また、図４（ｂ）の曲線４０
は、パルス発光時のその露光領域３８の走査方向（Ｘ方
向）の照度分布Ｉ（Ｘ）を示し、曲線４０の傾斜部４０
ａ及び４０ｂで示すように、照度分布Ｉ（Ｘ）のＸ方向
の端部は台形状に比較的なだらかに変化している。照度
分布Ｉ（Ｘ）がこのように台形状であると、ウエハ１９
上の各点での積算露光量のばらつきが小さくなり、走査
方向の照度均一性が向上する。FIG. 4A shows a state near the slit-shaped exposure area 38 on the wafer 19, and the width of the exposure area 38 in the scanning direction is D. In addition, the curve 40 in FIG.
Indicates the illuminance distribution I (X) in the scanning direction (X direction) of the exposure area 38 during pulsed light emission, and the inclined portion 40 of the curve 40.
As indicated by a and 40b, the end portion of the illuminance distribution I (X) in the X direction changes gently in comparison with the trapezoidal shape. If the illuminance distribution I (X) is thus trapezoidal, the wafer 19
The variation of the integrated exposure amount at each of the above points is reduced, and the illuminance uniformity in the scanning direction is improved.

【００３５】そして、倍率誤差が無い場合のウエハ１９
の走査速度をβ0 Ｖ、光源１のパルス発光の周波数をｆ
0 、１パルスの露光エネルギーの平均値をΔＥとする
と、図４（ａ）のウエハ１９上の被露光点３９での積算
露光量ΣＥ0 は、ほぼ次のようになる。この積算露光量
がΣＥ0 が目標露光量であるとする。 ΣＥ0 ＝ΔＥ・ｆ0・Ｄ／（β0・Ｖ） （６） 次に、走査方向の倍率誤差がαであるときの、ウエハ１
９の走査速度を（β0＋α）Ｖ、光源１のパルス発光の
周波数を（ｆ0 ＋Δｆ0)とすると、被露光点３９での積
算露光量ΣＥは、ほぼ次のようになる。 ΣＥ＝ΔＥ・（ｆ0 ＋Δｆ0)・Ｄ／｛（β0 ＋α）Ｖ｝ （７）Then, the wafer 19 when there is no magnification error
The scanning speed of β 0 V and the frequency of pulsed light emission of the light source 1
0 , where the average value of the exposure energy of one pulse is ΔE, the integrated exposure amount ΣE 0 at the exposed point 39 on the wafer 19 in FIG. 4A is approximately as follows. It is assumed that the integrated exposure amount ΣE 0 is the target exposure amount. ΣE 0 = ΔE · f 0 · D / (β 0 · V) (6) Next, the wafer 1 when the magnification error in the scanning direction is α
Assuming that the scanning speed of 9 is (β 0 + α) V and the frequency of pulsed light emission of the light source 1 is (f 0 + Δf 0 ), the integrated exposure amount ΣE at the exposed point 39 is approximately as follows. ΣE = ΔE · (f 0 + Δf 0 ) · D / {(β 0 + α) V} (7)

【００３６】この場合、ウエハ１９の走査速度が変化し
た場合でも、積算露光量ΣＥは目標露光量であるΣＥ0
と等しいことが要求される。従って、（６）式の右辺と
（７）式の右辺とを等しいとおくことにより、次式が得
られる。 ｆ0 ／β0 ＝（ｆ0 ＋Δｆ0)／（β0 ＋α） （８） これは、積算露光量ΣＥを目標露光量に維持するために
は、光源１の発振周波数ｆ（＝ｆ0 ＋Δｆ0)を、図４
（ｃ）に示すように、ウエハ１９の走査速度（β 0 ＋
α）Ｖに比例させる必要があることを意味する。そこ
で、スリットスキャン露光方式で露光を行う際に、主制
御系１６は、レチクルステージ制御部１７及びウエハス
テージ制御部２５を介してそれぞれレチクルステージ１
２及びウエハ側のＸＹステージ２１の走査速度を設定す
るのと並行して、トリガー制御部２９を介して光源１の
発振周波数ｆをウエハ１９の走査速度に比例する値に設
定する。これにより、ウエハ１９の走査速度を変えた場
合でも、ウエハ１９の各点での積算露光量が目標露光量
になる。In this case, the scanning speed of the wafer 19 changes and
In this case, the integrated exposure amount ΣE is the target exposure amount ΣE0
Is required to be equal to. Therefore, with the right side of equation (6)
By setting the right side of equation (7) to be equal, the following equation is obtained.
To be f0/ Β0= (F0+ Δf0) / (Β0+ Α) (8) This is to maintain the integrated exposure amount ΣE at the target exposure amount.
Is the oscillation frequency f (= f of the light source 10+ Δf0) Is shown in FIG.
As shown in (c), the scanning speed (β 0+
α) means that it must be proportional to V. There
Therefore, when performing exposure with the slit scan exposure method,
The control system 16 includes a reticle stage control unit 17 and a wafer
The reticle stage 1 via the tage control unit 25.
2 and set the scanning speed of the XY stage 21 on the wafer side
In parallel with the operation of the light source 1 via the trigger control unit 29
The oscillation frequency f is set to a value proportional to the scanning speed of the wafer 19.
Set. As a result, when the scanning speed of the wafer 19 is changed,
In this case, the integrated exposure amount at each point on the wafer 19 is the target exposure amount.
become.

【００３７】なお、上述実施例では、光源１の発振周波
数ｆをウエハ１９の走査速度に比例させているが、光源
１の発振周波数を一定の値ｆ0 に固定して、各パルス光
の光量の平均値をウエハ１９の走査速度に反比例するよ
うに変更しても良い。光量の制御方法としては、光源１
の電源電圧を制御する方法や、透過率をほぼ連続的に変
更できる可変ＮＤフィルターをレーザビームの光路に配
設する方法等が考えられる。また、露光光の光源がパル
ス発振型の光源ではなく、水銀ランプのような連続発光
型の光源である場合には、積算露光量を目標露光量に設
定するには、ウエハの走査速度に反比例するように露光
光の光量を制御する方法が用いられる。尚、倍率制御部
３５（駆動部３４と圧力制御部３６との少なくとも一
方）を用いて非走査方向の倍率誤差βを補正するとき、
走査方向の倍率も変動し得る。このような場合は、走査
方向の倍率変化量を考慮して前述の如き露光量制御を行
うことが望ましい。In the above embodiment, the oscillation frequency f of the light source 1 is proportional to the scanning speed of the wafer 19, but the oscillation frequency of the light source 1 is fixed to a constant value f 0 and the light quantity of each pulsed light is fixed. The average value of 1 may be changed so as to be inversely proportional to the scanning speed of the wafer 19. As a method of controlling the amount of light, the light source 1
The method of controlling the power supply voltage, the method of disposing a variable ND filter capable of changing the transmittance almost continuously in the optical path of the laser beam, and the like are conceivable. If the exposure light source is not a pulse oscillation type light source but a continuous light emission type light source such as a mercury lamp, in order to set the integrated exposure amount to the target exposure amount, it is inversely proportional to the wafer scanning speed. The method of controlling the light amount of the exposure light is used. When the magnification control unit 35 (at least one of the drive unit 34 and the pressure control unit 36) is used to correct the magnification error β in the non-scanning direction,
The magnification in the scanning direction can also change. In such a case, it is desirable to perform the above-described exposure amount control in consideration of the magnification change amount in the scanning direction.

【００３８】次に、本発明の他の実施例につき図５を参
照して説明する。本実施例では図１の投影露光装置をそ
のまま使用するが、その露光時の動作が異なっている。
図５は、本例の露光対象とするウエハを示し、この図５
において、ショット領域ＳＢ１及びＳＢ２には既にチッ
プパターンが形成されていると共に、ショット領域ＳＢ
１にはＸ方向に２列にウエハマーク４１Ａ〜４１Ｄ及び
４２Ａ〜４２Ｄが形成されている。他のショット領域に
も同様にウエハマークが形成されている。例えばショッ
ト領域ＳＢ１へレチクルのパターン像を露光する際に
は、スリット状の露光領域３８に対して−Ｘ方向にウエ
ハを走査する。そのスリット状の露光領域３８は図１の
ウエハ１９上の露光領域３８と同じものである。Next, another embodiment of the present invention will be described with reference to FIG. In this embodiment, the projection exposure apparatus of FIG. 1 is used as it is, but the operation at the time of exposure is different.
FIG. 5 shows a wafer to be exposed in this example.
In the shot areas SB1 and SB2, the chip pattern is already formed, and the shot areas SB and
1, wafer marks 41A to 41D and 42A to 42D are formed in two rows in the X direction. Wafer marks are similarly formed in other shot areas. For example, when the reticle pattern image is exposed on the shot area SB1, the wafer is scanned in the −X direction with respect to the slit-shaped exposure area 38. The slit-shaped exposure area 38 is the same as the exposure area 38 on the wafer 19 in FIG.

【００３９】また、図１のオフ・アクシスのアライメン
ト系としてのＦＩＡ系３０の観察領域が図５の２個の観
察領域３０Ａ及び３０Ｂであり、図１のＦＩＡ系３１の
観察領域が図５の２個の観察領域３１Ａ及び３１Ｂであ
る。即ち、観察領域３０Ａ及び３０Ｂは露光領域３８に
対して走査が始まる側にあり、観察領域３１Ａ及び３１
Ｂは露光領域３８に対して走査が終わった側にある。本
例の露光領域３８に対してショット領域ＳＢ１を走査す
る際に、観察領域３０Ａ及び３０Ｂをそれぞれウエハマ
ーク４１Ａ〜４１Ｄ及び４２Ａ〜４２Ｄが通過するよう
になっている。そこで、図１のＦＩＡ系３０では順次ウ
エハマーク４１Ａ及び４２Ａ、ウエハマーク４１Ｂ及び
４２Ｂ、‥‥のＹ方向の間隔ＬＹを計測する。更に、Ｆ
ＩＡ系３０では、順次ウエハマーク４１Ａ及び４１Ｂ、
ウエハマーク４２Ａ及び４２Ｂ等のＸ方向の間隔ＰＸを
計測する。The observation areas of the FIA system 30 as the off-axis alignment system of FIG. 1 are the two observation areas 30A and 30B of FIG. 5, and the observation area of the FIA system 31 of FIG. Two observation areas 31A and 31B. That is, the observation areas 30A and 30B are on the side where scanning starts with respect to the exposure area 38, and the observation areas 31A and 31B
B is on the side where the scanning is completed with respect to the exposure area 38. When the shot area SB1 is scanned with respect to the exposure area 38 of this example, the wafer marks 41A to 41D and 42A to 42D pass through the observation areas 30A and 30B, respectively. Therefore, in the FIA system 30 of FIG. 1, the distance LY in the Y direction between the wafer marks 41A and 42A, the wafer marks 41B and 42B, ... Is sequentially measured. Furthermore, F
In the IA system 30, the wafer marks 41A and 41B,
The distance PX between the wafer marks 42A and 42B in the X direction is measured.

【００４０】この計測結果が図１の主制御系１６に供給
され、主制御系１６では、ウエハマーク４１Ａ〜４１Ｄ
及び４２Ａ〜４２ＤのＹ方向及びＸ方向の間隔から、シ
ョット領域ＳＢ１内の各部のＸ方向及びＹ方向の倍率変
化を順次算出する。そして、露光領域３８に対して−Ｘ
方向にショット領域ＳＢ１を走査して露光を行う際に、
ウエハマークのＸ方向及びＹ方向の間隔を先読みするこ
とにより、次に露光する部分の倍率変化を算出し、Ｘ方
向及びＹ方向の倍率変化の補正を行いながらショット領
域ＳＢ１への露光を行う。本例でも、Ｘ方向の倍率変化
の補正はウエハの走査速度の補正で行われ、Ｙ方向の倍
率変化の補正は投影光学系１８の投影倍率の補正で行わ
れる。The measurement result is supplied to the main control system 16 of FIG. 1, and the main control system 16 receives the wafer marks 41A to 41D.
And the intervals of 42A to 42D in the Y direction and the X direction, the change in magnification in the X direction and the Y direction of each part in the shot area SB1 is sequentially calculated. Then, for the exposure area 38, -X
When performing exposure by scanning the shot area SB1 in the direction,
By pre-reading the distance between the wafer marks in the X and Y directions, the change in magnification of the portion to be exposed next is calculated, and the shot area SB1 is exposed while correcting the change in magnification in the X and Y directions. Also in this example, the correction of the magnification change in the X direction is performed by the correction of the scanning speed of the wafer, and the correction of the magnification change in the Y direction is performed by the correction of the projection magnification of projection optical system 18.

【００４１】なお、露光領域３８に対してウエハをＸ方
向に走査する際には、図１のＦＩＡ系３１を使用してウ
エハマークの座標を先読みする。このように本例によれ
ば、露光時にウエハマークの座標を先読みし、先読みし
た結果に基づいて走査方向及び非走査方向の倍率誤差を
補正して露光を行うことができるため、予めウエハの各
ショット領域の伸縮率を計測する必要がなく、露光時間
を短縮できる。また、各ショット領域ＳＢ１等を分割し
たブロック別に倍率変化の補正を行うことができるた
め、各ショット領域のディストーションをも補正するこ
とができる。When the wafer is scanned in the X direction with respect to the exposure area 38, the coordinates of the wafer mark are preread using the FIA system 31 shown in FIG. As described above, according to this example, the coordinates of the wafer mark are pre-read at the time of exposure, and the exposure can be performed by correcting the magnification error in the scanning direction and the non-scanning direction based on the result of the pre-reading. It is not necessary to measure the expansion / contraction ratio of the shot area, and the exposure time can be shortened. Further, since the magnification change can be corrected for each block obtained by dividing each shot area SB1 and the like, the distortion of each shot area can also be corrected.

【００４２】なお、図１の実施例では、予めウエハ１９
上のウエハマークの座標位置を計測し、この計測結果を
統計処理して各ショット領域の倍率変化を求めている
が、その統計処理方式とダイ・バイ・ダイ方式で倍率変
化を計測して補正を行う方式とを組み合わせてもよい。
即ち、予めウエハ全体の倍率変化及びディストーション
の変化を統計処理により求めておき、各ショット領域へ
の露光の前に、倍率制御部３５及びステージ制御部１
７，２５に、それぞれ非走査方向及び走査方向の倍率誤
差の補正を行っておく。次に、各ショット領域毎に改め
て、ダイ・バイ・ダイ方式で倍率変化及びディストーシ
ョンの計測を行って、残留倍率誤差及び残留ディストー
ションを求め、露光時にそれぞれ倍率補正を行う。この
方式では、ショット領域毎に倍率及びディストーション
が大きく変化している場合に、スループットの向上が図
れる。In the embodiment shown in FIG. 1, the wafer 19 is previously prepared.
The coordinate position of the upper wafer mark is measured and the measurement result is statistically processed to obtain the magnification change of each shot area. The magnification change is measured and corrected by the statistical processing method and die-by-die method. You may combine with the method of performing.
That is, a change in magnification and a change in distortion of the entire wafer are obtained in advance by statistical processing, and the magnification control unit 35 and the stage control unit 1 are provided before exposure to each shot area.
The magnification error in the non-scanning direction and the magnification error in the scanning direction are respectively corrected in Nos. 7 and 25. Next, for each shot area, the magnification change and the distortion are measured again by the die-by-die method to obtain the residual magnification error and the residual distortion, and the magnification is corrected at the time of exposure. With this method, the throughput can be improved when the magnification and the distortion greatly change for each shot area.

【００４３】また、露光時の照射エネルギーによる、投
影光学系１８の倍率変化については、予め照射エネルギ
ーと投影光学系１８の倍率変化との関係を求めておく。
そして、露光量モニター部２８で検出される積算露光量
等に基づいて、その投影光学系１８の倍率変化を相殺す
るように、倍率制御部３５を介して投影光学系１８の倍
率を補正すればよい。Regarding the change in the magnification of the projection optical system 18 due to the irradiation energy during exposure, the relationship between the irradiation energy and the change in the magnification of the projection optical system 18 is obtained in advance.
Then, based on the integrated exposure amount detected by the exposure amount monitor unit 28, the magnification of the projection optical system 18 is corrected via the magnification control unit 35 so as to cancel the change in the magnification of the projection optical system 18. Good.

【００４４】なお、本発明は上述実施例に限定されず、
本発明の要旨を逸脱しない範囲で種々の構成を取り得る
ことは勿論である。The present invention is not limited to the above embodiment,
Of course, various configurations can be adopted without departing from the scope of the present invention.

【００４５】[0045]

【発明の効果】本発明によれば、非走査方向の倍率誤差
を投影光学系の投影倍率の補正により補正し、走査方向
の倍率誤差をマスクと基板との相対速度の調整により補
正しているため、マスクから基板への走査方向の投影倍
率と、マスクから基板への非走査方向の投影倍率とをそ
れぞれ独立に補正できる利点がある。従って、重ね合わ
せ露光時に、マッチング精度を向上できる。また、基板
上のショット領域毎の倍率補正ができるため、複数の露
光装置を用いた場合の装置間のマッチング精度をも向上
できる。According to the present invention, the magnification error in the non-scanning direction is corrected by correcting the projection magnification of the projection optical system, and the magnification error in the scanning direction is corrected by adjusting the relative speed between the mask and the substrate. Therefore, there is an advantage that the projection magnification in the scanning direction from the mask to the substrate and the projection magnification in the non-scanning direction from the mask to the substrate can be independently corrected. Therefore, the matching accuracy can be improved during the overlay exposure. Further, since the magnification can be corrected for each shot area on the substrate, it is possible to improve the matching accuracy between devices when a plurality of exposure devices are used.

【００４６】また、マスクステージと基板ステージとの
相対速度が調整されたときに、基板に対する露光量が目
標露光量になるように露光量制御手段で露光光の露光エ
ネルギーを調整する場合には、その相対速度が変化した
場合でも、基板上の各点での積算露光量を目標露光量に
することができ、パターニング精度が向上する。Further, when the exposure energy of the exposure light is adjusted by the exposure amount control means so that the exposure amount for the substrate becomes the target exposure amount when the relative speed between the mask stage and the substrate stage is adjusted, Even if the relative speed changes, the integrated exposure amount at each point on the substrate can be made the target exposure amount, and the patterning accuracy is improved.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明による投影露光装置の一実施例を示す構
成図である。FIG. 1 is a configuration diagram showing an embodiment of a projection exposure apparatus according to the present invention.

【図２】図１のウエハ１９の露光面のショット領域の倍
率変化の状態を示す拡大平面図である。FIG. 2 is an enlarged plan view showing a state of magnification change of a shot area on an exposure surface of the wafer 19 of FIG.

【図３】レチクル１１及びウエハ１９を走査する際の説
明図である。FIG. 3 is an explanatory diagram when scanning a reticle 11 and a wafer 19.

【図４】（ａ）はウエハ上の露光領域を示す拡大平面
図、（ｂ）はその露光領域の走査方向の照度分布を示す
図、（ｃ）はパルス発振型の光源の発振周波数ｆとウエ
ハの走査速度との関係を示す図である。4A is an enlarged plan view showing an exposure area on a wafer, FIG. 4B is a view showing an illuminance distribution in the scanning direction of the exposure area, and FIG. 4C is an oscillation frequency f of a pulse oscillation type light source. It is a figure which shows the relationship with the scanning speed of a wafer.

【図５】本発明の他の実施例のウエハ上のショット領域
を示す拡大平面図である。FIG. 5 is an enlarged plan view showing a shot area on a wafer according to another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１ 光源 ２ ビーム整形光学系 ４ フライアイレンズ ５ ビームスプリッター ７ 視野絞り １１ レチクル １２ レチクルステージ １５，２５ レーザ干渉計 １６ 主制御系 １７ レチクルステージ制御部 １８ 投影光学系 １９ ウエハ ２１ ＸＹステージ ２５ ウエハステージ制御部 ３５ 倍率制御部 1 light source 2 beam shaping optical system 4 fly eye lens 5 beam splitter 7 field stop 11 reticle 12 reticle stage 15, 25 laser interferometer 16 main control system 17 reticle stage control unit 18 projection optical system 19 wafer 21 XY stage 25 wafer stage control Part 35 Magnification control unit

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 露光光で所定形状の照明領域を照明する
照明光学系と、前記照明領域に対して転写用のパターン
が形成されたマスクを所定の走査方向に走査するマスク
ステージと、前記照明領域内の前記マスクのパターン像
を感光性の基板上に投影する投影光学系と、前記基板を
保持して前記基板を前記マスクの走査と同期して前記走
査方向と共役な方向に走査する基板ステージとを有し、
前記所定形状の照明領域に対して前記マスク及び前記基
板を相対的に走査することにより、前記マスクのパター
ン像を逐次前記基板上に露光する装置において、 前記投影光学系の投影倍率を補正する結像特性補正手段
と、前記マスクステージと前記基板ステージとの相対速
度を補正するステージ相対速度補正手段とを設け、 前記投影光学系の前記走査方向に垂直な方向の倍率誤差
を前記結像特性補正手段により補正し、前記投影光学系
の前記走査方向の倍率誤差を前記ステージ相対速度補正
手段により前記マスクステージと前記基板ステージとの
相対速度を調整して補正することを特徴とする投影露光
装置。1. An illumination optical system for illuminating an illumination area having a predetermined shape with exposure light, a mask stage for scanning a mask having a pattern for transfer formed on the illumination area in a predetermined scanning direction, and the illumination. A projection optical system that projects a pattern image of the mask in a region onto a photosensitive substrate, and a substrate that holds the substrate and scans the substrate in a direction conjugate with the scanning direction in synchronization with scanning of the mask. Have a stage and
In a device that sequentially exposes the pattern image of the mask onto the substrate by relatively scanning the mask and the substrate with respect to the illumination region of the predetermined shape, the projection magnification of the projection optical system is corrected. Image characteristic correction means and stage relative speed correction means for correcting the relative speed between the mask stage and the substrate stage are provided, and the magnification error in a direction perpendicular to the scanning direction of the projection optical system is corrected to the image formation characteristic correction. The projection exposure apparatus is characterized in that the magnification error of the projection optical system in the scanning direction is corrected by the stage relative speed correction means by adjusting the relative speed between the mask stage and the substrate stage. 【請求項２】 前記露光光の単位面積及び単位時間当り
の露光エネルギーを調整する露光量制御手段を設け、 前記マスクステージと前記基板ステージとの相対速度が
調整されたときに、前記基板に対する露光量が目標露光
量になるように前記露光量制御手段で前記露光光の露光
エネルギーを調整することを特徴とする請求項１記載の
投影露光装置。2. An exposure amount control means for adjusting a unit area of the exposure light and an exposure energy per unit time is provided, and when the relative speed between the mask stage and the substrate stage is adjusted, the exposure for the substrate is performed. The projection exposure apparatus according to claim 1, wherein the exposure amount control means adjusts the exposure energy of the exposure light so that the amount becomes a target exposure amount.
JP10062193A 1993-04-27 1993-04-27 Projection exposure method and apparatus, and element manufacturing method Expired - Fee Related JP3309871B2 (en)

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JP10062193A JP3309871B2 (en) 1993-04-27 1993-04-27 Projection exposure method and apparatus, and element manufacturing method
JP2000116479A JP3375076B2 (en) 1993-04-27 2000-04-18 Projection exposure method and apparatus, and element manufacturing method
US10/268,907 US6753948B2 (en) 1993-04-27 2002-10-11 Scanning exposure method and apparatus

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