JPH06184595A - Detergent for resist removing step - Google Patents

Detergent for resist removing step

Info

Publication number
JPH06184595A
JPH06184595A JP35484492A JP35484492A JPH06184595A JP H06184595 A JPH06184595 A JP H06184595A JP 35484492 A JP35484492 A JP 35484492A JP 35484492 A JP35484492 A JP 35484492A JP H06184595 A JPH06184595 A JP H06184595A
Authority
JP
Japan
Prior art keywords
methyl
water
ethyl
alkyl ester
detergent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP35484492A
Other languages
Japanese (ja)
Inventor
Yasuyuki Takayanagi
恭之 高柳
Tomio Nakamura
富雄 中村
Shunichi Doi
俊一 土肥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Chemical Industry Co Ltd
Original Assignee
Nitto Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Chemical Industry Co Ltd filed Critical Nitto Chemical Industry Co Ltd
Priority to JP35484492A priority Critical patent/JPH06184595A/en
Publication of JPH06184595A publication Critical patent/JPH06184595A/en
Pending legal-status Critical Current

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To obtain the subject detergent which exhibits excellent detergency for a resist remover and is soluble in water, lowly toxic and excellent in handleability, etc., by using a specified hydroxycarboxylic acid ester as the essential constituent. CONSTITUTION:This detergent is produced by mixing at least one hydroxycarboxylic acid ester selected from an alkyl glycolate, an alkyl alpha- hydroxyisobutyrate and an alkyl beta-hydroxypropionate with at least one of water, pyrrolidone, N-methylpyrrolidone, dimethylformamide, dimethylacetamide, methyl acetate, ethyl acetate, methyl lactate, ethyl lactate, etc. Since this detergent is soluble in water, it makes it possible to proceed to the step of washing with water without the hitherto required steps of washing with a lipophilic solvent and then with a hydrophilic solvent, so that the process steps can be curtailed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、微細パターン形成工程
における基板の洗浄剤に関するものであり、更に詳しく
はレジスト剥離後の基板上に付着している剥離剤残査等
の洗浄に適した洗浄剤に関するものである。微細パター
ン形成工程は半導体製造、液晶ディスプレイ製造など多
くの場面で用いられている。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning agent for a substrate in a fine pattern forming process, and more specifically, a cleaning agent suitable for cleaning the residue of the releasing agent adhering to the substrate after the resist is removed. It is about. The fine pattern forming process is used in many situations such as semiconductor manufacturing and liquid crystal display manufacturing.

【0002】[0002]

【従来技術およびその問題点】微細パターン形成工程に
おいて、基板上に微細パターンを形成させる際、レジス
トを塗布し、露光、現像、エッチング等のプロセスを経
て最終的には不要となったレジストを、レジスト剥離液
を用いて基板上から除去している。レジスト剥離液に
は、通常、ポジ型およびネガ型レジスト用として塩素系
溶剤(テトラクロルエチレン、Oージクロルベンゼン
等)とアルキルベンゼンスルホン酸、あるいはアルキル
ベンゼンとアルキルベンゼンスルホン酸との組合せが広
く使用されている。ポジ型レジスト用としてはグライコ
ールエーテル類(ブチルジグリコール、メチセロソルブ
等)、ピロリドン類(Nーメチルピロリドン等)あるい
はスルホキシド類(ジメチルスルホキシド等)とアルカ
ノールアミンの組合せが広く使用されている。
2. Description of the Related Art In the fine pattern forming step, when a fine pattern is formed on a substrate, a resist is applied, and a resist which is no longer necessary after undergoing processes such as exposure, development and etching is removed. It is removed from the substrate using a resist stripper. For the resist stripper, a chlorine-based solvent (tetrachloroethylene, O-dichlorobenzene, etc.) and alkylbenzene sulfonic acid, or a combination of alkylbenzene and alkylbenzene sulfonic acid is widely used for positive and negative resists. There is. For positive resist, a combination of glycol ethers (butyldiglycol, methicellosolve, etc.), pyrrolidones (N-methylpyrrolidone, etc.) or sulfoxides (dimethylsulfoxide, etc.) and alkanolamines is widely used.

【0003】上記剥離液を用いてレジストを除去する工
程としては、ポジ・ネガ用はまず加温した剥離液に基板
を浸漬した後、親油性溶剤のアルキルベンゼン等で洗浄
し、次に親水性溶剤のメタノールやイソプロピルアルコ
ール等で洗浄、その後水洗する工程が採られている。ポ
ジ型用は加温した剥離液に基板を浸漬した後、直ぐに親
水性溶剤のメタノールやイソプロピルアルコール等で洗
浄、その後水洗する工程が採られている。
In the step of removing the resist using the above-mentioned stripping solution, for positive / negative, the substrate is first dipped in a stripping solution which has been heated, then washed with a lipophilic solvent such as alkylbenzene, and then a hydrophilic solvent. The steps of washing with methanol, isopropyl alcohol, etc., and then washing with water are adopted. For the positive type, a step of immersing the substrate in a heated stripping solution, immediately washing with a hydrophilic solvent such as methanol or isopropyl alcohol, and then washing with water is adopted.

【0004】しかし、このような方法では工程が煩雑で
あり、アルキルベンゼン等は不快臭があり、毒性が大き
く安全衛生上問題があり、親水性のメタノールやイソプ
ロピルアルコール等は引火点が低く取扱い上問題があ
る。
However, in such a method, the process is complicated, alkylbenzene and the like have an unpleasant odor, toxicity is great and there is a safety and health problem, and hydrophilic methanol and isopropyl alcohol have a low flash point and are a handling problem. There is.

【0005】[0005]

【発明が解決しようとする課題】本発明の目的は、洗浄
力にすぐれているのみならず、毒性や不快臭がなく安全
性にすぐれ、しかも基板上の剥離剤残査を容易に洗浄除
去でき、工程を短縮することができる新規なレジスト剥
離工程用洗浄剤を提供することにある。
The object of the present invention is not only excellent in cleaning power but also excellent in safety without toxicity and unpleasant odor, and moreover, the release agent residue on the substrate can be easily removed by cleaning. It is an object of the present invention to provide a novel cleaning agent for a resist stripping process that can shorten the process.

【0006】[0006]

【課題を解決するための手段】すなわち、本発明の一つ
は、グリコ−ル酸アルキルエステル、α−ヒドロキシイ
ソ酪酸アルキルエステルおよびβ−ヒドロキシプロピオ
ン酸アルキルエステルから選ばれた少なくとも一種のヒ
ドロキシカルボン酸エステルを含有するレジスト剥離工
程用洗浄剤に関する。
Means for Solving the Problems That is, one of the present invention is to provide at least one hydroxycarboxylic acid selected from glyco-alkyl acid alkyl ester, α-hydroxyisobutyric acid alkyl ester and β-hydroxypropionic acid alkyl ester. The present invention relates to a cleaning agent for a resist stripping process containing an ester.

【0007】本発明の他の一つは、グリコ−ル酸アルキ
ルエステル、α−ヒドロキシイソ酪酸アルキルエステル
およびβ−ヒドロキシプロピオン酸アルキルエステルか
ら選ばれた少なくとも一種のヒドロキシカルボン酸エス
テルと水、ピロリドン、N−メチルピロリドン、ジメチ
ルホルムアミド、ジメチルアセトアミド、酢酸メチル、
酢酸エチル、乳酸メチル、乳酸エチル、α−メトキシイ
ソ酪酸メチル、β−メトキシイソ酪酸メチル、γーブチ
ロラクトン、ジメチルスルフォキシドおよびスルホラン
から選ばれた少なくとも1種以上とを含有するレジスト
剥離工程用洗浄剤に関する。
According to another aspect of the present invention, at least one hydroxycarboxylic acid ester selected from glyco-acid alkyl ester, α-hydroxyisobutyric acid alkyl ester and β-hydroxypropionic acid alkyl ester, and water, pyrrolidone, N-methylpyrrolidone, dimethylformamide, dimethylacetamide, methyl acetate,
A cleaning agent for a resist stripping step containing at least one selected from ethyl acetate, methyl lactate, ethyl lactate, methyl α-methoxyisobutyrate, methyl β-methoxyisobutyrate, γ-butyrolactone, dimethylsulfoxide and sulfolane. .

【0008】以下、本発明を詳細に説明する。本発明に
おける洗浄剤は、ヒドロキシカルボン酸エステルが主成
分である。ヒドロキシカルボン酸エステルとしてはグリ
コ−ル酸メチル、グリコ−ル酸エチル、グリコ−ル酸イ
ソプロピル、グリコ−ル酸ブチル、α−ヒドロキシイソ
酪酸メチル、α−ヒドロキシイソ酪酸エチル、α−ヒド
ロキシイソ酪酸イソプロピル、α−ヒドロキシイソ酪酸
ブチル、β−ヒドロキシプロピオン酸メチル、β−ヒド
ロキシプロピオン酸エチル、β−ヒドロキシプロピオン
酸イソプロピルおよびβ−ヒドロキシプロピオン酸ブチ
ル乳酸メチルなどが用いられる。これらのヒドロキシカ
ルボン酸エステルは単独で用いてもよいし、また2種以
上を組み合わせて用いてもよい。
The present invention will be described in detail below. The cleaning agent in the present invention is mainly composed of hydroxycarboxylic acid ester. Examples of the hydroxycarboxylic acid ester include methyl glycolate, ethyl glycolate, isopropyl glycolate, butyl glycolate, methyl α-hydroxyisobutyrate, ethyl α-hydroxyisobutyrate, and isopropyl α-hydroxyisobutyrate. , Butyl α-hydroxyisobutyrate, methyl β-hydroxypropionate, ethyl β-hydroxypropionate, isopropyl β-hydroxypropionate and methyl lactate butyl β-hydroxypropionate are used. These hydroxycarboxylic acid esters may be used alone or in combination of two or more kinds.

【0009】本発明に用いられるヒドロキシカルボン酸
エステルの濃度は50%以上であることが好ましい。ヒ
ドロキシカルボン酸エステル濃度が50%未満の場合
は、本発明の特長である洗浄性、安全性、操作性の良さ
などが次第に損なわれていく。
The concentration of the hydroxycarboxylic acid ester used in the present invention is preferably 50% or more. When the hydroxycarboxylic acid ester concentration is less than 50%, the cleaning properties, safety, operability, etc., which are the features of the present invention, are gradually impaired.

【0010】本発明における洗浄剤は、前記のヒドロキ
シカルボン酸エステルに加えて、他の親水性有機溶媒ま
たは水などの第2成分の溶媒を併用することもでき、そ
れにより洗浄能力を制御することができる。
In the cleaning agent of the present invention, in addition to the above-mentioned hydroxycarboxylic acid ester, other hydrophilic organic solvent or a solvent of the second component such as water can be used in combination, thereby controlling the cleaning ability. You can

【0011】併用される親水性有機溶媒は特に制限され
るものでないが、好ましいものとしては例えばピロリド
ン、N−メチルピロリドン、ジメチルホルムアミド、ジ
メチルアセトアミド、酢酸メチル、酢酸エチル、乳酸メ
チル、乳酸エチル、α−メトキシイソ酪酸メチル、β−
メトキシイソ酪酸メチル、γ−ブチロラクトン、ジメチ
ルスルホキシドまたはスルホランなどが挙げられる。こ
れらの第2成分の溶媒は2種類以上を組み合わせて用い
ることもできる。第2成分の溶媒の濃度は50重量%以
下が好ましい。
The hydrophilic organic solvent used in combination is not particularly limited, but preferred examples include pyrrolidone, N-methylpyrrolidone, dimethylformamide, dimethylacetamide, methyl acetate, ethyl acetate, methyl lactate, ethyl lactate, α. -Methyl methoxyisobutyrate, β-
Methyl methoxyisobutyrate, γ-butyrolactone, dimethyl sulfoxide, sulfolane and the like can be mentioned. These second component solvents can be used in combination of two or more kinds. The concentration of the solvent of the second component is preferably 50% by weight or less.

【0012】また、洗浄力の向上などのため、界面活性
剤を併用することもできる。界面活性剤としては、例え
ばアルキル硫酸エステル塩、アルキルフェノ−ルのポリ
アルキレンエ−テル、スルホコハク酸塩などが挙げられ
る。
Further, a surfactant may be used in combination for improving the detergency. Examples of the surfactant include alkyl sulfate ester salts, alkylphenol polyalkylene ethers, and sulfosuccinates.

【0013】本発明の洗浄剤に適用できるレジストおよ
びレジスト剥離剤は特に制限されず、通常使用されてい
るものの中から任意に選ぶことができるが、特に顕著な
洗浄効果を示すレジスト剥離剤としては、アルキルベン
ゼンスルフォン酸、アルキルベンゼン、アルキルナフタ
リン、フェノール、アルキルフェノール、塩素系溶剤、
クロルベンゼンを成分として含むもの或いは、エタノー
ルアミン、グライコールエーテル、ピロリドン系溶剤、
アルキルスルフォキシド、スルフォラン等を成分とする
ものを挙げることができる。
The resist and the resist remover applicable to the cleaning agent of the present invention are not particularly limited and can be arbitrarily selected from those usually used. However, as the resist remover exhibiting a particularly remarkable cleaning effect, , Alkylbenzene sulfonic acid, alkylbenzene, alkylnaphthalene, phenol, alkylphenol, chlorine-based solvent,
Those containing chlorobenzene as a component, or ethanolamine, glycol ether, pyrrolidone-based solvent,
Examples thereof include those containing alkyl sulfoxide, sulfolane and the like.

【0014】[0014]

【実施例】以下、本発明を実施例および比較例によって
具体的に説明するが、本発明は以下の実施例に限定され
るものではない。
EXAMPLES The present invention will be specifically described below with reference to examples and comparative examples, but the present invention is not limited to the following examples.

【0015】実施例1〜12 シリコンウェハー上に市販のポジ型フォトレジストをス
ピンコートにて厚さ1.5μに塗布し100℃の温度で
2分間ホットプレート上にてベークしてフォトレジスト
膜を形成した。このフォトレジスト付シリコンウェハー
を〔A〕ドデシルベンゼンスルホン酸20重量%+アル
キルベンゼン80重量%、あるいは〔B〕モノエタノー
ルアミン50重量%+ブチルジグリコール50重量%の
剥離液中に80℃で10分間浸漬し、その後、第1表に
示す本発明の各洗浄剤にて洗浄、ついで水洗した後、ウ
ェハー上の残存物付着量を測定し、洗浄力を評価した。
Examples 1 to 12 Commercially available positive photoresist was applied on a silicon wafer by spin coating to a thickness of 1.5 μm and baked at 100 ° C. for 2 minutes on a hot plate to form a photoresist film. Formed. This photoresist-added silicon wafer is placed in a stripping solution of [A] dodecylbenzenesulfonic acid 20% by weight + alkylbenzene 80% by weight or [B] monoethanolamine 50% by weight + butyldiglycol 50% by weight at 80 ° C for 10 minutes. Immersion, then washing with each of the cleaning agents of the present invention shown in Table 1, followed by washing with water, the amount of residue adhered on the wafer was measured, and the cleaning power was evaluated.

【0016】比較例1〜2 比較のために、上記実施例と同様にして、フォトレジス
ト膜を形成したシリコンウェハーを前記〔A〕あるいは
〔B〕の剥離液中に浸漬し、その後、キシレンあるいは
イソプロピルアルコ−ルで洗浄、ついで水洗した後、ウ
ェハー上の残存物付着量を測定し、洗浄力を評価した。
Comparative Examples 1 and 2 For comparison, a silicon wafer having a photoresist film formed thereon was dipped in the stripping solution of the above [A] or [B], and then xylene or After washing with isopropyl alcohol and then washing with water, the amount of the residue adhered on the wafer was measured to evaluate the washing power.

【0017】これらの結果を第1表に示す。なお、残存
付着量の測定は目視および金属顕微鏡にて判断した。 〇:目視ならびに金属顕微鏡にて残渣なし △:目視では残渣ないが、金属顕微鏡にて有り ×:目視にて残渣有り
The results are shown in Table 1. In addition, the measurement of the residual adhesion amount was judged visually and by a metallurgical microscope. ◯: No residue visually or with a metallographic microscope Δ: No residue visually, but with a metallographic microscope ×: visually residual

【0018】 [0018]

【0019】[0019]

【発明の効果】本発明のレジスト剥離工程用洗浄剤は、
各剥離剤に対する洗浄性に優れているうえ、水溶性であ
るために、従来のように親油性溶剤から親水性溶剤への
洗浄工程無しに水洗工程に移ることができ、工程の大幅
な短縮がはかれる。また、ヒドロキシカルボン酸エステ
ルをベースとしているため低毒性で不快臭がなく、且つ
引火点が比較的高く、操作性や安全性も著しく向上す
る。
The cleaning agent for the resist stripping process of the present invention is
It has excellent detergency for each release agent, and because it is water-soluble, it can be moved to the water washing step without the conventional washing step from a lipophilic solvent to a hydrophilic solvent, greatly reducing the step. Be peeled off. In addition, since it is based on hydroxycarboxylic acid ester, it has low toxicity, no unpleasant odor, has a relatively high flash point, and significantly improves operability and safety.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 グリコ−ル酸アルキルエステル、α−ヒ
ドロキシイソ酪酸アルキルエステルおよびβ−ヒドロキ
シプロピオン酸アルキルエステルから選ばれた少なくと
も一種のヒドロキシカルボン酸エステルを含有するレジ
スト剥離工程用洗浄剤。
1. A cleaning agent for a resist stripping process, which contains at least one hydroxycarboxylic acid ester selected from glyco-acid alkyl ester, α-hydroxyisobutyric acid alkyl ester and β-hydroxypropionic acid alkyl ester.
【請求項2】 グリコ−ル酸アルキルエステル、α−ヒ
ドロキシイソ酪酸アルキルエステルおよびβ−ヒドロキ
シプロピオン酸アルキルエステルから選ばれた少なくと
も一種のヒドロキシカルボン酸エステルと水、ピロリド
ン、N−メチルピロリドン、ジメチルホルムアミド、ジ
メチルアセトアミド、酢酸メチル、酢酸エチル、乳酸メ
チル、乳酸エチル、α−メトキシイソ酪酸メチル、β−
メトキシイソ酪酸メチル、γーブチロラクトン、ジメチ
ルスルフォキシドおよびスルホランから選ばれた少なく
とも1種以上とを含有するレジスト剥離工程用洗浄剤。
2. At least one hydroxycarboxylic acid ester selected from glyco-acid alkyl ester, α-hydroxyisobutyric acid alkyl ester and β-hydroxypropionic acid alkyl ester, and water, pyrrolidone, N-methylpyrrolidone, dimethylformamide. , Dimethylacetamide, methyl acetate, ethyl acetate, methyl lactate, ethyl lactate, α-methoxyisobutyrate, β-
A cleaning agent for a resist stripping process, which contains at least one selected from methyl methoxyisobutyrate, γ-butyrolactone, dimethyl sulfoxide and sulfolane.
【請求項3】 ヒドロキシカルボン酸エステルが、グリ
コ−ル酸メチル、グリコ−ル酸エチル、グリコ−ル酸イ
ソプロピル、グリコ−ル酸ブチル、α−ヒドロキシイソ
酪酸メチル、α−ヒドロキシイソ酪酸エチル、α−ヒド
ロキシイソ酪酸イソプロピル、α−ヒドロキシイソ酪酸
ブチル、β−ヒドロキシプロピオン酸メチル、β−ヒド
ロキシプロピオン酸エチル、β−ヒドロキシプロピオン
酸イソプロピルまたはβ−ヒドロキシプロピオン酸ブチ
ルである請求項1または2記載の洗浄剤。
3. The hydroxycarboxylic acid ester is methyl glycolate, ethyl glycolate, isopropyl glycolate, butyl glycolate, methyl α-hydroxyisobutyrate, ethyl α-hydroxyisobutyrate, α. Washing according to claim 1 or 2, which is isopropyl hydroxyisobutyrate, butyl α-hydroxyisobutyrate, methyl β-hydroxypropionate, ethyl β-hydroxypropionate, isopropyl β-hydroxypropionate or butyl β-hydroxypropionate. Agent.
JP35484492A 1992-12-18 1992-12-18 Detergent for resist removing step Pending JPH06184595A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35484492A JPH06184595A (en) 1992-12-18 1992-12-18 Detergent for resist removing step

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35484492A JPH06184595A (en) 1992-12-18 1992-12-18 Detergent for resist removing step

Publications (1)

Publication Number Publication Date
JPH06184595A true JPH06184595A (en) 1994-07-05

Family

ID=18440293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35484492A Pending JPH06184595A (en) 1992-12-18 1992-12-18 Detergent for resist removing step

Country Status (1)

Country Link
JP (1) JPH06184595A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09188900A (en) * 1996-01-04 1997-07-22 Ishihara Chem Co Ltd Detergent for brush car-washing machine
EP0788143A2 (en) 1996-02-05 1997-08-06 Mitsubishi Gas Chemical Company, Inc. Method of producing semiconductor device and rinse for cleaning semiconductor device
EP0789389A3 (en) * 1996-02-08 1999-08-25 Nec Corporation Method of peeling photo-resist layer without damage to metal wiring
SG84619A1 (en) * 1999-12-28 2001-11-20 Mitsubishi Gas Chemical Co Edge bead remover
WO2002095500A1 (en) * 2001-05-21 2002-11-28 Dongjin Semichem Co., Ltd. Resist remover composition
KR100363272B1 (en) * 2000-07-13 2002-12-05 주식회사 동진쎄미켐 Thinner composition for removing tft-lcd photoresist
JP2005227770A (en) * 2004-02-10 2005-08-25 Samsung Electronics Co Ltd Thinner composite and photoresist removal method using the same
JP2007284798A (en) * 2007-05-28 2007-11-01 Mitsubishi Rayon Co Ltd Method for cleaning metallic component and/or electronic component
US8021490B2 (en) 2007-01-04 2011-09-20 Eastman Chemical Company Substrate cleaning processes through the use of solvents and systems
US20150355545A1 (en) * 2014-06-10 2015-12-10 Dongwoo Fine-Chem Co., Ltd. Thinner composition for improving coating and removing performance of resist
WO2023008356A1 (en) * 2021-07-30 2023-02-02 三菱瓦斯化学株式会社 Thinner composition, and method for producing semiconductor devices using said thinner composition

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09188900A (en) * 1996-01-04 1997-07-22 Ishihara Chem Co Ltd Detergent for brush car-washing machine
EP0788143A2 (en) 1996-02-05 1997-08-06 Mitsubishi Gas Chemical Company, Inc. Method of producing semiconductor device and rinse for cleaning semiconductor device
EP0789389A3 (en) * 1996-02-08 1999-08-25 Nec Corporation Method of peeling photo-resist layer without damage to metal wiring
SG84619A1 (en) * 1999-12-28 2001-11-20 Mitsubishi Gas Chemical Co Edge bead remover
KR100363272B1 (en) * 2000-07-13 2002-12-05 주식회사 동진쎄미켐 Thinner composition for removing tft-lcd photoresist
US6861210B2 (en) 2001-05-21 2005-03-01 Dongjin Semichen Co., Ltd. Resist remover composition
WO2002095500A1 (en) * 2001-05-21 2002-11-28 Dongjin Semichem Co., Ltd. Resist remover composition
JP2005227770A (en) * 2004-02-10 2005-08-25 Samsung Electronics Co Ltd Thinner composite and photoresist removal method using the same
JP4580249B2 (en) * 2004-02-10 2010-11-10 三星電子株式会社 Thinner composition and photoresist removal method using the same
US8021490B2 (en) 2007-01-04 2011-09-20 Eastman Chemical Company Substrate cleaning processes through the use of solvents and systems
JP2007284798A (en) * 2007-05-28 2007-11-01 Mitsubishi Rayon Co Ltd Method for cleaning metallic component and/or electronic component
US20150355545A1 (en) * 2014-06-10 2015-12-10 Dongwoo Fine-Chem Co., Ltd. Thinner composition for improving coating and removing performance of resist
US9568830B2 (en) * 2014-06-10 2017-02-14 Dongwoo Fine-Chem Co., Ltd. Thinner composition for improving coating and removing performance of resist
WO2023008356A1 (en) * 2021-07-30 2023-02-02 三菱瓦斯化学株式会社 Thinner composition, and method for producing semiconductor devices using said thinner composition

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