JPH06137943A - Thermal infrared sensor - Google Patents
Thermal infrared sensorInfo
- Publication number
- JPH06137943A JPH06137943A JP4291007A JP29100792A JPH06137943A JP H06137943 A JPH06137943 A JP H06137943A JP 4291007 A JP4291007 A JP 4291007A JP 29100792 A JP29100792 A JP 29100792A JP H06137943 A JPH06137943 A JP H06137943A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- infrared
- pattern
- infrared sensor
- infrared ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は熱型赤外線センサに関
し、特に赤外線吸収層に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermal infrared sensor, and more particularly to an infrared absorption layer.
【０００２】[0002]
【従来の技術】従来この種の赤外線センサは、図５，図
６に示すようなものであった。図５は上面図、図６は図
５のＡ−Ａ′断面図を示し、シリコン基板１上に、シリ
コンエッチング液に対し耐腐蝕性を持ち、エッチングの
ストッパーとして働く窒化膜２を形成する。次に窒化膜
２の上に、シリコンエッチング液によりエッチングされ
てキャビティとなるポリシリコンの犠牲層３を形成し、
犠牲層３上に、シリコンエッチング液に対し耐腐蝕性を
持ち、エッチングのストッパーとして働く窒化膜４を再
度形成する。この窒化膜４の上に入射赤外線を電気信号
に変換する材料のパタン５を形成する。この変換パタン
５上にシリコンエッチング液から変換パタン５を保護す
る酸化膜６を形成し、その膜の上に赤外線吸収層７を形
成する。図５に示すように、犠牲層上の四隅に穴８を形
成し、この穴８からエッチング液を浸入させて、ポリシ
リコンをエッチングし、キャビティを形成する。2. Description of the Related Art Conventionally, this type of infrared sensor has been shown in FIGS. FIG. 5 is a top view and FIG. 6 is a sectional view taken along the line AA ′ of FIG. 5. A nitride film 2 having a corrosion resistance to a silicon etching solution and serving as an etching stopper is formed on a silicon substrate 1. Next, a sacrificial layer 3 of polysilicon, which becomes a cavity by being etched with a silicon etching solution, is formed on the nitride film 2.
On the sacrificial layer 3, a nitride film 4 having corrosion resistance to a silicon etching solution and serving as an etching stopper is formed again. A pattern 5 made of a material that converts incident infrared rays into an electric signal is formed on the nitride film 4. An oxide film 6 for protecting the conversion pattern 5 from the silicon etching liquid is formed on the conversion pattern 5, and an infrared absorption layer 7 is formed on the oxide film 6. As shown in FIG. 5, holes 8 are formed at the four corners on the sacrificial layer, and an etching solution is introduced through the holes 8 to etch the polysilicon and form cavities.
【０００３】[0003]
【発明が解決しようとする課題】上述した従来の赤外線
センサは、吸収層としてニクロム蒸着膜を用いていたの
で、吸収率が低く、検知部に入射する赤外線を有効に利
用できないという欠点があった。Since the above-mentioned conventional infrared sensor uses the nichrome vapor deposition film as the absorption layer, it has a drawback that the absorption rate is low and the infrared rays incident on the detection portion cannot be effectively used. .
【０００４】[0004]
【課題を解決するための手段】本発明の赤外線センサ
は、絶縁薄膜上に入射赤外線を電気信号に変換する材料
のパタンが形成され、その上に赤外線吸収層が形成さ
れ、前記薄膜を周囲から支持するダイアフラム構造を有
する熱型赤外線センサにおいて、キャビティ内部に、前
記薄膜と対向する面に赤外線反射率の高い金属膜を有す
ることを特徴とする。According to the infrared sensor of the present invention, a pattern of a material for converting incident infrared rays into an electric signal is formed on an insulating thin film, and an infrared absorbing layer is formed on the insulating thin film to prevent the thin film from surrounding. A thermal infrared sensor having a supporting diaphragm structure is characterized in that a metal film having a high infrared reflectance is provided inside a cavity on a surface facing the thin film.
【０００５】[0005]
【実施例】次に本発明の実施例について図面を参照して
説明する。図１は本発明の実施例の上面図であり、図２
は図１のＡ−Ａ′断面図を示す。金属，半導体から成る
サーモパイル５ａはシリコンエッチング液に対し、耐腐
蝕性を持ち、ストッパーとして働く窒化膜の薄膜２の上
に形成されている。サーモパイル５ａの表面にはシリコ
ンエッチング液からサーモパイル５ａを保護する酸化膜
６が形成されている。サーモパイル５ａの温接点は、シ
リコンエッチング後キャビティとなるポリシリコンの犠
牲層３の上部にあり、冷接点は窒化膜２，４を介してシ
リコン基板上にある。又、犠牲層３の下部には、赤外線
反射率の高い金属膜９がある。金属膜９は、赤外線吸収
層７を透過してきた赤外線を反射して、再度、吸収層に
て吸収させている。犠牲層上の四隅に穿いている穴８
は、犠牲層３をエッチングしてキャビティを作る為に必
要な穴で、エッチング液を浸入させるためのものであ
る。Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a top view of the embodiment of the present invention.
Shows a sectional view taken along the line AA 'in FIG. The thermopile 5a made of a metal or a semiconductor is formed on the thin film 2 of the nitride film which has a corrosion resistance against a silicon etching solution and acts as a stopper. An oxide film 6 that protects the thermopile 5a from the silicon etching liquid is formed on the surface of the thermopile 5a. The hot contact of the thermopile 5a is on the sacrificial layer 3 of polysilicon that will become a cavity after silicon etching, and the cold contact is on the silicon substrate via the nitride films 2 and 4. Further, below the sacrificial layer 3, there is a metal film 9 having a high infrared reflectance. The metal film 9 reflects the infrared rays that have passed through the infrared absorption layer 7, and makes the absorption layers absorb the infrared rays again. Holes 8 drilled in the four corners on the sacrificial layer
Is a hole necessary for etching the sacrificial layer 3 to form a cavity, and is for allowing an etching solution to enter.
【０００６】サーモパイル５ａは熱電能の異なる２種類
の熱電材料１０，１１（ここではｐ型ポリシリコン，ｎ
型ポリシリコン）をアルミから成る接点部１２を介し、
交互に接続したものである。２種類の熱電材料１０，１
１は各１本ずつで１対の熱電対を成し、合計４対の熱電
対を直列に接続している。又、１対の熱電対の両端は、
一方を温接点側、もう一方を冷接点側に配置してある。The thermopile 5a is made of two kinds of thermoelectric materials 10 and 11 (here, p-type polysilicon, n having different thermoelectric powers).
Type polysilicon) through the contact portion 12 made of aluminum,
They are connected alternately. Two types of thermoelectric materials 10,1
Each of the 1's constitutes a pair of thermocouples, and a total of 4 pairs of thermocouples are connected in series. Also, both ends of a pair of thermocouples,
One is located on the hot junction side and the other on the cold junction side.
【０００７】図３は、前記薄膜１３を含む正方形のセル
１４を２次元アレイ化した場合の実施例である。図の下
側に前記薄膜部の拡大図を示す。熱電能の異なる２種類
の熱電材料１０，１１を接点部１２を介して交互に接続
したものであり、２種類の熱電材料１０，１１は各１本
ずつで１対の熱電対を為し、合計８対の熱電対を直列に
接続している。１つのセルの中には、上記薄膜の他にＭ
ＯＳＦＥＴやＣＣＤなどの走査回路１５を含むので、上
記薄膜をセル１４内部の端の方に位置している。FIG. 3 shows an embodiment in which a square cell 14 including the thin film 13 is formed into a two-dimensional array. An enlarged view of the thin film portion is shown on the lower side of the figure. Two kinds of thermoelectric materials 10 and 11 having different thermoelectric powers are alternately connected via a contact portion 12, and each of the two kinds of thermoelectric materials 10 and 11 forms one thermocouple, A total of 8 thermocouples are connected in series. In addition to the above thin film, M
Since the scanning circuit 15 such as an OSFET or CCD is included, the thin film is located toward the end inside the cell 14.
【０００８】この実施例では熱電能の異なる２種類の材
料として半導体を用いたが、異種の金属、金属と半導体
でもよい。又、薄膜の周囲には、薄膜部分以外への赤外
線の入射を防ぐための金属層１６がある。In this embodiment, semiconductors are used as two kinds of materials having different thermoelectric powers, but different kinds of metals or metals and semiconductors may be used. Around the thin film, there is a metal layer 16 for preventing infrared rays from entering other than the thin film portion.
【０００９】尚、エッチング液を浸入させるための穴８
は、本実施例では薄膜１３の対角線上にスリット状に穿
けてある。A hole 8 for allowing the etching liquid to enter
In the present embodiment, is formed in a slit shape on the diagonal line of the thin film 13.
【００１０】図４は、前記薄膜を含む正方形のセル１４
を２次元アレイ化した場合の実施例である。図の下側に
前記薄膜部の拡大図を示す。薄膜上にある、つづら折り
状のパターン５ｂはボロメータであり、電気抵抗値の温
度係数が大きい導電体から成っている。ボロメータパタ
ーン５ｂは全て、薄膜の領域におさまっており、赤外線
入射を正確に測定している。FIG. 4 shows a square cell 14 containing the thin film.
It is an example in the case of forming a two-dimensional array. An enlarged view of the thin film portion is shown on the lower side of the figure. The zigzag pattern 5b on the thin film is a bolometer and is made of a conductor having a large temperature coefficient of electric resistance. The bolometer pattern 5b is entirely in the thin film region and accurately measures the infrared ray incidence.
【００１１】１つのセルの中には、上記薄膜の他にＭＯ
ＳＦＥＴやＣＣＤなどの走査回路１５を含むので、上記
薄膜はセル１４の内部の端の方に位置いている。又、薄
膜の周囲には薄膜部分以外への赤外線の入射を防ぐため
の金属層１６があり、エッチング液を浸入させるための
穴８は、本実施例では薄膜１３の隅２カ所に穿けてあ
る。In addition to the above-mentioned thin film, MO is contained in one cell.
The thin film is located closer to the inner edge of the cell 14 because it includes a scanning circuit 15 such as an SFET or CCD. Further, there is a metal layer 16 around the thin film for preventing infrared rays from entering other than the thin film portion, and holes 8 for infiltrating the etching solution are formed at two corners of the thin film 13 in this embodiment. .
【００１２】尚、図示はしないが、本発明は焦電型の赤
外線センサに対しても適用できる。Although not shown, the present invention can also be applied to a pyroelectric infrared sensor.
【００１３】[0013]
【発明の効果】以上説明したように本発明は、キャビテ
ィ内部に、赤外線検知部である薄膜と対向する面に、赤
外線反射率の高い金属膜を使用したので、上記薄膜を透
過してきた赤外線は、上記金属膜にて反射され、吸収層
にて再度吸収されるので、入射赤外線を有効に利用でき
るという結果を有する。As described above, according to the present invention, since the metal film having a high infrared reflectance is used in the inside of the cavity on the surface facing the thin film which is the infrared detecting portion, the infrared rays transmitted through the thin film are Since it is reflected by the metal film and is again absorbed by the absorption layer, incident infrared rays can be effectively used.
【図１】本発明の一実施例を示す正面図。FIG. 1 is a front view showing an embodiment of the present invention.
【図２】図１に示した実施例上面図のＡ−Ａ′断面図。FIG. 2 is a cross-sectional view taken along the line AA ′ in the top view of the embodiment shown in FIG.
【図３】本発明のセンサを２次元アレイ化した例を示
す。FIG. 3 shows an example in which the sensor of the present invention is formed into a two-dimensional array.
【図４】本発明のセンサを２次元アレイ化した他の例を
示す図。FIG. 4 is a diagram showing another example in which the sensor of the present invention is formed into a two-dimensional array.
【図５】従来例の上面図。FIG. 5 is a top view of a conventional example.
【図６】図５に示した従来例上面図のＡ−Ａ′断面図。6 is a cross-sectional view taken along the line AA ′ of the top view of the conventional example shown in FIG.
【符号の説明】 １ シリコン基板 ２ 窒化膜 ３ 犠牲層 ４ 窒化膜 ５ パタン ５ａ サーモパイルパタン ５ｂ ボロメータパタン ６ 酸化膜 ７ 吸収層 ８ 穴 ９ 反射膜 １０ ｐ型ポリシリコン １１ ｎ型ポリシリコン １２ アルミ １３ 薄膜 １４ セル １５ 走査回路 １６ 金属膜[Explanation of Codes] 1 Silicon substrate 2 Nitride film 3 Sacrificial layer 4 Nitride film 5 Pattern 5a Thermopile pattern 5b Bolometer pattern 6 Oxide film 7 Absorption layer 8 Hole 9 Reflective film 10 p-type polysilicon 11 n-type polysilicon 12 Aluminum 13 Thin film 14 cells 15 scanning circuit 16 metal film
Claims (2)
換する材料のパターンが形成され、その上に赤外線吸収
層が形成され、前記薄膜を周囲から支持するダイアフラ
ム構造を有する熱型赤外線センサにおいて、 キャビティ内部に、前記薄膜と対向する面に赤外線反射
率の高い金属膜を使用することを特徴とする熱型赤外線
センサ。1. A thermal infrared sensor having a diaphragm structure for forming a pattern of a material for converting incident infrared rays into an electric signal on an insulating thin film, and forming an infrared absorbing layer on the pattern, for supporting the thin film from the surroundings. A thermal infrared sensor characterized in that a metal film having a high infrared reflectance is used on the surface facing the thin film inside the cavity.
ことを特徴とする請求項１の熱型赤外線センサ。2. The thermal infrared sensor according to claim 1, wherein the surface is provided with a thermopile pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04291007A JP3132197B2 (en) | 1992-10-29 | 1992-10-29 | Thermal infrared sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04291007A JP3132197B2 (en) | 1992-10-29 | 1992-10-29 | Thermal infrared sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06137943A true JPH06137943A (en) | 1994-05-20 |
| JP3132197B2 JP3132197B2 (en) | 2001-02-05 |
Family
ID=17763255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04291007A Expired - Lifetime JP3132197B2 (en) | 1992-10-29 | 1992-10-29 | Thermal infrared sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3132197B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5831266A (en) * | 1996-09-12 | 1998-11-03 | Institut National D'optique | Microbridge structure for emitting or detecting radiations and method for forming such microbridge structure |
| US5907156A (en) * | 1995-03-22 | 1999-05-25 | Mitsubishi Denki Kabushiki Kaisha | Wide range radiation detector |
| US5962909A (en) * | 1996-09-12 | 1999-10-05 | Institut National D'optique | Microstructure suspended by a microsupport |
| US6097031A (en) * | 1997-07-25 | 2000-08-01 | Honeywell Inc. | Dual bandwith bolometer |
| JP2002340668A (en) * | 2001-05-18 | 2002-11-27 | Denso Corp | Thermopile infrared sensor, and inspection method therefor |
| EP2416135A1 (en) * | 2009-03-31 | 2012-02-08 | Panasonic Electric Works Co., Ltd. | Infrared array sensor |
| JP2012108119A (en) * | 2010-10-26 | 2012-06-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Detector of electromagnetic radiation |
| CN110044494A (en) * | 2019-03-22 | 2019-07-23 | 清华大学 | A kind of heat-sensitive eye array and its manufacturing method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014046190A1 (en) * | 2012-09-21 | 2014-03-27 | グローブライド株式会社 | Fishing reel |
-
1992
- 1992-10-29 JP JP04291007A patent/JP3132197B2/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5907156A (en) * | 1995-03-22 | 1999-05-25 | Mitsubishi Denki Kabushiki Kaisha | Wide range radiation detector |
| US5831266A (en) * | 1996-09-12 | 1998-11-03 | Institut National D'optique | Microbridge structure for emitting or detecting radiations and method for forming such microbridge structure |
| US5962909A (en) * | 1996-09-12 | 1999-10-05 | Institut National D'optique | Microstructure suspended by a microsupport |
| US6130109A (en) * | 1996-09-12 | 2000-10-10 | Institut National D'optique | Microbridge structure and method for forming a microstructure suspended by a micro support |
| US6097031A (en) * | 1997-07-25 | 2000-08-01 | Honeywell Inc. | Dual bandwith bolometer |
| JP2002340668A (en) * | 2001-05-18 | 2002-11-27 | Denso Corp | Thermopile infrared sensor, and inspection method therefor |
| EP2416135A1 (en) * | 2009-03-31 | 2012-02-08 | Panasonic Electric Works Co., Ltd. | Infrared array sensor |
| EP2416135A4 (en) * | 2009-03-31 | 2013-09-04 | Panasonic Corp | Infrared array sensor |
| JP2012108119A (en) * | 2010-10-26 | 2012-06-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Detector of electromagnetic radiation |
| CN110044494A (en) * | 2019-03-22 | 2019-07-23 | 清华大学 | A kind of heat-sensitive eye array and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3132197B2 (en) | 2001-02-05 |
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