JPH0595130A - Semiconductor photodetector - Google Patents

Abstract

PURPOSE:To obtain high efficiency in photoelectric conversion by forming an electrode layer, which serves also as a reflecting layer and located on the upper side of a semiconductor laminated layer other than the side nearer to the substrate, without alloying it with the semiconductor laminated layer so that the light, which passes through an absorbing part, can be used effectively. CONSTITUTION:A semiconductor light receiver comprises a semiconductor substrate 11 and a semiconductor laminated layer, which includes first semiconductor layers 12 and 13 of first conductive type, a semiconductor layer 14 of secondary conductive type, and third semiconductor layers 15 and 16 of first conductive type. Moreover, a first electrode layer 21 for the first semiconductor layers 12 and 13, and a secondary electrode 23 for the third semiconductor layers 15 and 16 are provided in the semiconductor light receiver. The rear side 11a of the semiconductor substrate 11 other than the side facing a semiconductor laminated layer 17 is used as a light incident face 20. At the same time, a secondary electrode layer 23, which serves also as a reflecting layer and is located on the upper side 17a of the semiconductor laminated layer 17 other than the side nearer to the semiconductor substrate 11, is formed without allaying it with the semiconductor laminated layer 17.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light receiving device which functions as a phototransistor or a photodiode.

[0002]

2. Description of the Related Art Conventionally, a semiconductor light receiving device described below with reference to FIG. 17 has been proposed.

That is, on a semiconductor substrate 1 made of, for example, InP and having n-type, a semiconductor layer 2 made of, for example, InGaAs and having n-type, and a semiconductor layer 3 made of InGaAs and having p-type, for example, For example, a semiconductor laminated body 5 in which a semiconductor layer 4 made of InP and having an n-type is laminated in that order is formed, and on the surface 1a of the semiconductor substrate 1 opposite to the semiconductor laminated body 5 side, An electrode layer 6 having a light incident window 6a and made of Ti, Cr, Au, or the like is formed by alloying with the semiconductor substrate 1,
Further, on the surface 5a of the semiconductor laminated body 5 opposite to the semiconductor substrate 1 side, the electrode layer 7 also serving as a reflection layer made of Ti, Cr, Au or the like is opposed to the light incident window 6a and the semiconductor laminated body. It is formed by alloying with the body 5.

According to the conventional semiconductor light receiving device having such a structure, the light L is externally applied to the semiconductor laminate 5 while the power source is connected through the load between the electrode layers 6 and 7.
If the light enters from the side opposite to the semiconductor laminated body 5 side of the semiconductor substrate 1 through the light incident window 6a, the light L
Are mainly absorbed in the semiconductor layer 3 (in this case,
Since the semiconductor layer 2 is made of InGaAs like the semiconductor layer 3, the semiconductor layer 2 is also absorbed in the semiconductor layer 2), and accordingly, the photocurrent flowing through the electrode layers 6 and 7 to the load is obtained. Np using the semiconductor layers 2, 3 and 4 as a collector layer, a base layer and an emitter layer, respectively.
It functions as an n-type phototransistor.

According to the conventional semiconductor light receiving device shown in FIG. 17, as described above, the light L incident on the inside of the semiconductor laminated body 5 is mainly the semiconductor layer 3 as a base layer.
When it absorbs light, it exhibits a function as a phototransistor. In this case, since the electrode layer 7 also serves as a reflection layer, the light L incident on the inside of the semiconductor laminated body 5 from the outside is absorbed.
The light that has not been absorbed by the semiconductor layer 3 and has passed through the semiconductor layer 3 passes through the semiconductor layer 4 serving as the emitter layer toward the electrode layer 7 side, and is then reflected by the electrode layer 7. Then, the reflected light is again mainly absorbed by the semiconductor layer 3.

Therefore, in the case of the conventional semiconductor light receiving device shown in FIG. 17, a higher photoelectric conversion efficiency can be obtained as compared with the case where the electrode layer 7 does not serve as a reflection layer.

[0007]

However, as shown in FIG.
In the case of the conventional semiconductor light receiving device shown in FIG. 3, since the electrode layer 6 which also serves as the reflection layer is formed on the surface 5a of the semiconductor laminated body 5 by alloying with the semiconductor laminated body 5, the semiconductor laminated body is formed. 5 and the electrode layer 6, their alloying layer 8 is formed, so that no flat interface is formed between the semiconductor laminate 5 and the electrode layer 6.

Therefore, as described above, in the light L incident on the inside of the semiconductor laminate 5 from the outside, the light that has not been absorbed by the semiconductor layer 3 and has passed through the semiconductor layer 3 is due to the electrode layer 7. When reflected light is obtained by reflecting on, the reflected light is diffusely reflected.

Therefore, as described above, in the light L incident on the inside of the semiconductor laminate 5 from the outside, the light component transmitted through the semiconductor layer 3 without being absorbed by the semiconductor layer 3 is due to the electrode layer 7. When the reflected light is absorbed mainly by the semiconductor layer 3 again, the light component mainly absorbed by the semiconductor layer 3 again passes through the semiconductor layer 3 and travels toward the electrode layer 7 side. It's only part.

Therefore, as described above, even if a high photoelectric conversion efficiency can be obtained as compared with the case where the electrode layer 7 does not also serve as a reflection layer, the photoelectric conversion efficiency is extremely low. It was

Therefore, the present invention does not have the above-mentioned drawbacks.
It proposes a new semiconductor light receiving device.

[0012]

According to a first aspect of the present invention, there is provided a semiconductor light-receiving device comprising: (i) a semiconductor substrate; and (ii) a first semiconductor substrate formed on the semiconductor substrate and having a first conductivity type. A semiconductor layer, a second semiconductor layer having a second conductivity type opposite to the first conductivity type, and a third having a first conductivity type
A semiconductor layered body having a structure in which the semiconductor layers are laminated in that order, (iii) a first electrode layer for the first semiconductor layer, and (iv) a second electrode layer for the third semiconductor layer. An electrode layer, and (v) a surface of the semiconductor substrate opposite to the semiconductor laminate side is a light incident surface, and (vi) a surface of the semiconductor laminate opposite to the semiconductor substrate side. An electrode layer also serving as a reflective layer is formed on the upper surface as the second electrode layer without alloying with the semiconductor laminated body.

The semiconductor light receiving device according to the second invention of the present application is the semiconductor light receiving device according to the first invention of the present application, in which the surface of the semiconductor substrate opposite to the semiconductor laminated body side is used as the light incident surface. The surface of the laminated body on the side opposite to the semiconductor substrate side is used as a light incident surface, and accordingly, the electrode layer also serving as a reflection layer is formed on the surface of the semiconductor laminated body on the side opposite to the semiconductor substrate side. As the electrode layer, instead of being formed without alloying with the semiconductor laminated body, on the surface opposite to the semiconductor laminated body side of the semiconductor substrate, the reflection layer, between the semiconductor substrate and It has the same configuration as the semiconductor light receiving device according to the first invention of the present application, except that it is formed without alloying.

The semiconductor light receiving device according to the third invention of the present application is the semiconductor light receiving device according to the second invention of the present application, on the surface of the semiconductor substrate opposite to the semiconductor laminated body side,
Instead of forming the reflective layer without alloying with the semiconductor substrate, the electrode layer also serving as the reflective layer is provided on the surface of the semiconductor substrate opposite to the semiconductor laminated body side. It has the same configuration as the semiconductor light receiving device according to the second aspect of the present invention, except that the electrode layer is formed without alloying with the semiconductor substrate.

A semiconductor light receiving device according to a fourth invention of the present application is (i) a semiconductor substrate, (ii) a first semiconductor layer having a first conductivity type on the semiconductor substrate, and a first conductivity type. A semiconductor laminate having a configuration in which a second semiconductor layer having a second conductivity type opposite to that is laminated in that order with or without a third semiconductor layer as a light absorption layer interposed therebetween. A body, (iii) a first electrode layer for the first semiconductor layer, (iv) a second electrode layer for the second semiconductor layer, and (v) the semiconductor substrate. The surface on the side opposite to the semiconductor laminated body is used as a light incident surface, and (vi) the electrode layer also serving as a reflective layer is formed on the surface on the side opposite to the semiconductor substrate side of the semiconductor laminated body,
The electrode layer is formed without being alloyed with the semiconductor laminate.

The semiconductor light receiving device according to the fifth invention of the present application is the semiconductor light receiving device according to the third invention of the present application, in which the surface of the semiconductor substrate opposite to the semiconductor laminated body side is used as the light incident surface. The surface of the laminated body on the side opposite to the semiconductor substrate side is used as a light incident surface, and accordingly, the electrode layer also serving as a reflection layer is formed on the surface of the semiconductor laminated body on the side opposite to the semiconductor substrate side. As the electrode layer, instead of being formed without alloying with the semiconductor laminated body, on the surface opposite to the semiconductor laminated body side of the semiconductor substrate, the reflection layer, between the semiconductor substrate and It has the same structure as the semiconductor light receiving device according to the fourth invention of the present application, except that it is formed without alloying.

A semiconductor light receiving device according to a sixth invention of the present application is the semiconductor light receiving device according to the fifth invention of the present application, on the surface of the semiconductor substrate opposite to the semiconductor laminated body side,
Instead of forming the reflective layer without alloying with the semiconductor substrate, the electrode layer also serving as the reflective layer is provided on the surface of the semiconductor substrate opposite to the semiconductor laminated body side. The electrode layer has the same structure as the semiconductor light receiving device according to the fifth aspect of the present invention, except that the electrode layer is formed without alloying with the semiconductor substrate.

[0018]

According to the semiconductor light receiving device of the first invention of the present application, the energy band gaps of the first, second and third semiconductor layers are appropriately selected in advance, and
A main power source is connected through a load between the second electrode layer and the second electrode layer, and if necessary, a third electrode layer for the second semiconductor layer is provided in advance, and the third electrode layer and the first or second electrode layer are provided.
Bias power supply is connected between the electrode layer of
When light is incident from the outside into the semiconductor laminated body through the light incident surface of the surface of the semiconductor substrate opposite to the semiconductor laminated body side, the light is absorbed mainly in the second semiconductor layer, and And a mechanism whereby a photocurrent flowing through the first and second electrode layers to the load is obtained.
(A) When the first conductivity type of the first and third semiconductor layers is n-type and the second conductivity type of the second semiconductor layer is p-type, the first, second and The third semiconductor layer as a collector layer, a base layer and an emitter layer respectively, or the emitter layer, the base layer and a collector layer, and the first and second electrode layers respectively as a collector electrode layer and an emitter electrode layer, or The function as an npn-type phototransistor serving as an emitter layer and a collector layer is exhibited according to the case of the semiconductor layer of the conventional semiconductor light receiving device described above with reference to FIG. 17, and (b) the first and third semiconductor layers. The first has
Is p-type and the second conductivity type of the second semiconductor layer is p-type, the first, second and third semiconductor layers are respectively a collector layer, a base layer and a As an emitter layer or as an emitter layer, a base layer and a collector layer,
The function as a pnp type phototransistor using the first and second electrode layers as a collector electrode layer and an emitter electrode layer or as an emitter layer and a collector layer, respectively, is shown in FIG.
The same is applied to the case of the semiconductor layer of the conventional semiconductor light receiving device described in 7 above.

Further, according to the semiconductor light receiving device of the first invention of the present application, the light incident on the semiconductor laminated body from the outside can be transmitted in accordance with the case of the conventional semiconductor light receiving device described above and in FIG. , Mainly as a second layer
Is absorbed by the semiconductor layer of
Function as a p-type or pnp-type phototransistor. In this case, since the second electrode layer also serves as a reflective layer as in the case of the conventional semiconductor light receiving device described above with reference to FIG. Second in the light that enters the body
Of the light transmitted through the second semiconductor layer without being absorbed by the second semiconductor layer is directed to the second electrode layer side through the third semiconductor layer as the emitter layer (or collector layer), and then, The light is reflected due to the second electrode layer, and the reflected light is again absorbed mainly by the second semiconductor layer.

Therefore, according to the semiconductor light receiving device according to the first invention of the present application, it is assumed that the second electrode layer does not serve as the reflecting layer, as in the case of the conventional semiconductor light receiving device described above with reference to FIG. Compared with the case, high photoelectric conversion efficiency can be obtained.

However, in the case of the semiconductor light receiving device according to the first invention of the present application, the second electrode layer is alloyed with the semiconductor laminate on the surface of the semiconductor laminate opposite to the semiconductor substrate side. Therefore, a flat interface is formed between the semiconductor layered body and the second electrode layer, and thus, as described above, the second layer may be included in the light incident on the inside of the semiconductor layered body from the outside. Second semiconductor layer without being absorbed by
When the light component transmitted through the semiconductor layer is reflected due to the second electrode layer and reflected light is obtained, the reflected light is hardly irregularly reflected, so that the reflected light is reflected by the conventional semiconductor light receiving device. Compared with the case, the amount is remarkably large and can be absorbed mainly by the second semiconductor layer.

Therefore, according to the semiconductor light receiving device of the first invention of the present application, a much higher photoelectric conversion efficiency can be obtained as compared with the case of the conventional semiconductor light receiving device described in FIG.

The semiconductor light receiving device according to the second invention of the present application has the same configuration as that of the semiconductor light receiving device according to the first invention of the present application except for the matters described above, and therefore a detailed description thereof will be omitted. As in the case of the semiconductor light receiving device according to the first aspect of the invention, the energy band gaps of the first, second and third semiconductor layers are appropriately selected in advance, and a load is applied between the first and second electrode layers. To the main power source, and if necessary, a third electrode layer for the second semiconductor layer is provided in advance, and the third electrode layer and the first electrode layer
Alternatively, a bias power source is connected to the second electrode layer, and in that state, light is incident from the outside into the semiconductor laminated body through the light incident surface of the surface of the semiconductor laminated body opposite to the semiconductor substrate side. Then, as in the case of the semiconductor light receiving device according to the first aspect of the present invention, the light is mainly absorbed in the second semiconductor layer and accordingly, passes through the first and second electrode layers. In the same manner as in the semiconductor light receiving device according to the first invention of the present application, (a) the first conductivity type of the first and third semiconductor layers is an n-type by a mechanism in which a photocurrent flowing through a load is obtained. And when the second conductivity type of the second semiconductor layer is p-type, the first, second and third
Of the semiconductor layers as a collector layer, a base layer and an emitter layer respectively, or an emitter layer, a base layer and a collector layer, and the first and second electrode layers respectively as a collector electrode layer and an emitter electrode layer or an emitter layer And a collector layer, which functions as an npn-type phototransistor, and (b) the first semiconductor layer has the first semiconductor layer.
Is p-type and the second conductivity type of the second semiconductor layer is p-type, the first, second and third semiconductor layers are respectively a collector layer, a base layer and a As an emitter layer or as an emitter layer, a base layer and a collector layer,
The first and second electrode layers serve as a collector electrode layer and an emitter electrode layer, or serve as a pnp type phototransistor having an emitter layer and a collector layer, respectively.

Also, in the case of the semiconductor light receiving device according to the second invention of the present application, as in the case of the semiconductor light receiving device according to the first invention of the present application, and as described above, the light incident on the semiconductor laminated body from the outside is prevented. , And exhibits the function as the above-mentioned npn-type or pnp-type phototransistor mainly by being absorbed by the second semiconductor layer as the base layer. In this case, the side opposite to the semiconductor laminated body side of the semiconductor substrate is provided. Since a reflective layer is formed on the surface of
According to the case of the semiconductor light receiving device according to the first invention of the present application, in the light incident on the inside of the semiconductor laminated body from the outside, the light component transmitted through the second semiconductor layer without being absorbed by the second semiconductor layer is It goes through the first semiconductor layer as the collector layer (or the emitter layer) to the reflective layer side, and then is reflected by the reflective layer, and the reflected light is again mainly the second semiconductor layer. Absorbed by.

In this case, since the reflective layer is formed on the surface of the semiconductor substrate opposite to the semiconductor laminated body side without alloying with the semiconductor substrate, the semiconductor substrate and the reflective layer are not formed. Therefore, as described above, in the light incident on the inside of the semiconductor laminated body from the outside, the light component transmitted through the second semiconductor layer without being absorbed by the second semiconductor layer is formed as described above. , When the reflected light is obtained by reflecting due to the reflective layer, the reflected light hardly diffuses,
Therefore, as in the case of the semiconductor light receiving device according to the first invention of the present application, the reflected light is remarkably large and can be mainly absorbed by the second semiconductor layer.

Therefore, also in the case of the semiconductor light receiving device according to the second invention of the present application, a markedly high photoelectric conversion efficiency can be obtained as in the case of the semiconductor light receiving device according to the first invention of the present application.

The semiconductor light receiving device according to the third invention of the present application has the same configuration as that of the semiconductor light receiving device according to the second invention of the present application except for the matters described above, and thus detailed description thereof will be omitted. The same action and effect as in the case of the semiconductor light receiving device according to the second invention of the present application, in which the "reflection layer" is read as the "electrode layer also serving as the reflection layer" or the "first electrode layer", can be obtained.

According to the semiconductor light receiving device of the fourth aspect of the present invention, a power source is connected between the first and second electrode layers through a load, and in that state, light is externally introduced into the semiconductor laminate to form a semiconductor substrate. When the light is made incident through the light incident surface of the surface opposite to the semiconductor laminated body side, the light is absorbed by the third semiconductor layer as the light absorption layer or the first conductivity type between the first and second semiconductor layers. 2 conductivity type junction (pn junction or np
(A) the first and second semiconductor layers are light-absorbing layers by a mechanism in which a photocurrent flowing through the first and second electrode layers to the load is obtained. P is stacked via the third semiconductor layer as
In the case of exhibiting a function as an in-type or nip-type photodiode, and (b) laminating the first and second semiconductor layers without interposing the third semiconductor layer as the light absorption layer. , Pn-type or np-type photodiode.

Further, according to the semiconductor light receiving device of the fourth invention of the present application, as described above, the light incident on the semiconductor laminate from the outside is generated by the third semiconductor layer or the first and second semiconductor layers. By being absorbed in the pn junction or the np junction of the above, it exhibits the function as the above-mentioned pin type or nip type photodiode or the pn type or np type photodiode. Since the electrode layer also serves as the reflective layer, the third semiconductor layer, or the first and second semiconductor layers are exposed to the light entering the semiconductor laminate from the outside.
Of the light having passed through the third semiconductor layer or the pn junction or np junction between the first and second semiconductor layers without being absorbed by the pn junction or np junction between the semiconductor layers of To the second electrode layer side, and then the second
Reflected by the electrode layer of the second semiconductor layer, and the reflected light is again absorbed mainly by the second semiconductor layer.

In this case, since the second electrode layer is formed on the surface of the semiconductor laminated body opposite to the semiconductor substrate side without alloying with the semiconductor laminated body, A flat interface is formed between the semiconductor stacked body and the second electrode layer. Therefore, as described above, in the light entering the semiconductor stacked body from the outside, the third semiconductor layer, or the first and second semiconductor layers are formed. Of the light transmitted through the third semiconductor layer, or the pn junction or the np junction between the first and second semiconductor layers without being absorbed by the pn junction or the np junction between the semiconductor layers of
When reflected light is obtained due to the second electrode layer,
The reflected light is hardly irregularly reflected, and therefore, the reflected light is remarkably large, and the third semiconductor layer, or the first and second semiconductor layers.
Can be absorbed by the pn junction or the np junction between the semiconductor layers.

Therefore, also in the case of the semiconductor light receiving device according to the fourth invention of the present application, much higher photoelectric conversion efficiency can be obtained, as in the case of the semiconductor light receiving device according to the first invention of the present application.

The semiconductor light receiving device according to the fifth invention of the present application has the same configuration as that of the semiconductor light receiving device according to the fourth invention of the present application except for the matters described above, and therefore, detailed description thereof will be omitted. As in the case of the semiconductor light receiving device according to the fourth aspect of the present invention, a main power source is connected through a load between the first and second electrode layers, and in that state, light is externally introduced into the semiconductor laminated body and the semiconductor laminated body. When the light is incident through the light incident surface of the surface opposite to the semiconductor substrate side, the light is emitted from the third semiconductor layer or the first and second semiconductor layers as in the case of the semiconductor light receiving device according to the fourth invention of the present application. Absorbed at the pn junction or the np junction between the second semiconductor layers,
Accordingly, a photocurrent flowing through the first and second electrode layers to the load is obtained, and the pin type or nip type is used as in the case of the semiconductor light receiving device according to the fourth aspect of the present invention. , Or a pn-type or np-type photodiode.

Further, also in the case of the semiconductor light receiving device according to the fifth aspect of the present invention, as in the case of the semiconductor light receiving device according to the fourth aspect of the present application, and as described above, the light incident on the semiconductor laminated body from the outside is prevented. , The third semiconductor layer, or the pn junction or the np junction between the first and second semiconductor layers, thereby absorbing the above-mentioned pin type or ni.
It functions as a p-type phototransistor or a pn-type or np-type phototransistor, but in this case, on the surface of the semiconductor substrate opposite to the semiconductor laminated body side,
Since the reflective layer is formed, according to the semiconductor light receiving device according to the fourth aspect of the present invention, the third semiconductor layer, or the first and second semiconductors are exposed to the light entering the semiconductor laminate from the outside. The light component that is not absorbed by the pn junction or the np junction between the layers and is transmitted through the third semiconductor layer or the pn junction or the np junction between the first and second semiconductor layers is
Through the semiconductor layer toward the reflective layer, and then reflected by the reflective layer, and the reflected light is again reflected by the pn between the third semiconductor layer or the first and second semiconductor layers. It is absorbed in the junction or the np junction.

In this case, since the reflective layer is formed on the surface of the semiconductor substrate opposite to the semiconductor laminated body side without alloying with the semiconductor substrate, the semiconductor substrate and the reflective interlayer are not formed. Therefore, as described above, the pn junction or the np junction between the third semiconductor layer or the first and second semiconductor layers in the light incident from the outside into the semiconductor laminate is formed as described above. When a light component which is not absorbed by the third semiconductor layer or transmitted through the pn junction or the np junction between the first and second semiconductor layers is reflected by the reflective layer to obtain reflected light, the reflection The light is hardly irregularly reflected, and accordingly, the reflected light is remarkably large as in the case of the semiconductor light receiving device according to the fourth invention of the present application, and the third semiconductor layer, or the first and second semiconductor layers are separated. Pn
It can be absorbed in the junction or the np junction.

Therefore, even in the case of the semiconductor light receiving device according to the fifth aspect of the present invention, much higher photoelectric conversion efficiency can be obtained, as in the case of the semiconductor light receiving device according to the fourth aspect of the present invention.

The semiconductor light receiving device according to the sixth invention of the present application has the same configuration as that of the semiconductor light receiving device according to the fourth invention of the present application except for the matters described above, and therefore a detailed description thereof will be omitted. The same operation and effect as in the case of the semiconductor light receiving device according to the fifth aspect of the present invention, in which the "reflection layer" is read as the "electrode layer also serving as the reflection layer" or the "first electrode layer", can be obtained.

[0037]

First Embodiment Next, a first embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

The semiconductor light receiving device according to the present invention shown in FIG. 1 has a structure described below.

That is, for example, main surfaces 11a and 1 which are made of InP and have semi-insulating properties and which are flat and opposed to each other are provided.
1b having a semiconductor substrate 11 having one main surface 11a as a light incident surface 20 and the other main surface 1 opposed to the main surface 11a as the light incident surface 20 of the semiconductor substrate 11.
On 1b, a semiconductor layer 12 made of, for example, InP and having n ⁺ type, a semiconductor layer 13 made of, for example, InGaAs system and having n type, and a semiconductor layer 14 made of, for example, InGaAs system and having p type, A semiconductor laminated body 17 having a structure in which a semiconductor layer 15 made of InP and having n type and a semiconductor layer 16 made of InP and having n ⁺ type, for example, are laminated in that order is formed.

In this case, the semiconductor layer 13 is the semiconductor layer 12
The semiconductor layer 14 is locally formed on the semiconductor layer 13 and is formed on the semiconductor layer 13.
The semiconductor layer 15 is locally formed on the semiconductor layer 14, and the semiconductor layer 16 is locally formed on the semiconductor layer 15.

Then, the semiconductor layer 13 is formed on the semiconductor layer 12.
In the region where the semiconductor layer 13 is not formed, the electrode layer 21 for the semiconductor layer 13 is formed without alloying with the semiconductor layer 12, and the semiconductor layer 1 is formed on the semiconductor layer 14.
In the region where 5 is not formed, the electrode layer 22 for the semiconductor layer 14 is formed without alloying with the semiconductor layer 14, and further, on the side opposite to the semiconductor substrate 11 side of the semiconductor stacked body 17. Semiconductor layer 16 as surface 17a
The electrode layer 22 for the semiconductor layer 15, which also serves as a reflective layer, extends over the entire upper surface of the semiconductor layer 16 and is alloyed with the semiconductor laminate 17, and thus with the semiconductor layer 16. It is formed without turning into. in this case,
The electrode layer 23 that also serves as a reflection layer has a structure in which an electrode layer made of W and an electrode layer made of WSi are laminated in this order, and the other electrode layers 21 and 22 are correspondingly formed.
Also has the same configuration as the electrode layer 23.

The above is the configuration of the first embodiment of the semiconductor light receiving device according to the present invention.

According to the semiconductor light receiving device of the present invention having such a configuration, the main power source is connected between the electrode layers 21 and 23 through the load, and the bias power source is connected between the electrode layers 22 and 23. In the state, the light L from the outside is
If the light L is made to enter the semiconductor laminated body 17 through the light incident surface 20 of the surface 11a of the semiconductor substrate 11 opposite to the semiconductor laminated body 17 side, the light L is mainly absorbed in the semiconductor layer 14 (in this case, Since the semiconductor layer 13 is made of InGaAs like the semiconductor layer 14, it is also absorbed in the semiconductor layer 13), and accordingly, the photocurrent flowing to the load through the electrode layers 21 and 23 is obtained. (A) semiconductor layers 13, 14 and 15 are a collector layer, a base layer and an emitter layer, respectively, and the semiconductor layer 12 is a collector electrode-attached layer (contact layer).
The semiconductor layer 16 is used as a layer for attaching an emitter electrode (cap layer), and the electrode layers 21 and 23 are used as a collector electrode layer and an emitter electrode layer, respectively, to function as an npn type phototransistor, and the conventional semiconductor light receiving function described in FIG. Present according to the case of the device.

Further, according to the semiconductor light receiving device of the present invention shown in FIG. 1, light incident on the semiconductor laminate 17 from the outside is applied in the same manner as in the case of the conventional semiconductor light receiving device described above with reference to FIG. L is mainly absorbed by the semiconductor layer 14 as a base layer, so that the above np
Although it functions as an n-type phototransistor, in this case, since the electrode layer 23 also serves as a reflection layer in accordance with the electrode layer 7 in the case of the conventional semiconductor light receiving device described above with reference to FIG. In the light L incident on the body 17, the light that has not been absorbed by the semiconductor layer 14 and has passed through the semiconductor layer 14 passes through the semiconductor layer 15 as an emitter layer and the semiconductor layer 16 as a layer with an emitter electrode. The light is reflected toward the electrode layer 23 and then reflected by the electrode layer 23, and the reflected light is again absorbed mainly by the semiconductor layer 14.

Therefore, according to the semiconductor light receiving device of the present invention shown in FIG. 1, in the case where the electrode layer 23 does not also serve as a reflecting layer, as in the case of the conventional semiconductor light receiving device described in FIG. In comparison, high photoelectric conversion efficiency can be obtained.

However, in the case of the semiconductor light receiving device according to the present invention shown in FIG. 1, the electrode layer 23 is the semiconductor laminated body 17.
Since it is formed on the surface 17a opposite to the semiconductor substrate 11 side without alloying with the semiconductor laminated body 17, it is described above in FIG. 17 between the semiconductor laminated body 17 and the electrode layer 23. No alloying layer is formed as is the case with conventional semiconductor light-receiving devices, which results in the formation of a flat interface between the semiconductor stack 17 and the electrode layer 23, and thus, as described above. In addition, when the light L that is incident on the inside of the semiconductor stacked body 17 from the outside and is transmitted through the semiconductor layer 14 without being absorbed by the semiconductor layer 14 is reflected by the electrode layer 23, reflected light is obtained. The reflected light is hardly irregularly reflected, and therefore, the reflected light is remarkably larger than in the case of the conventional semiconductor light receiving device and can be mainly absorbed by the semiconductor layer 14.

Therefore, according to the semiconductor light receiving device of the present invention shown in FIG. 1, a much higher photoelectric conversion efficiency can be obtained than in the case of the conventional semiconductor light receiving device described in FIG.

[0048]

Second Embodiment Next, a second embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

In FIG. 2, parts corresponding to those in FIG. 1 are designated by the same reference numerals, and detailed description thereof will be omitted.

The semiconductor light receiving device according to the present invention shown in FIG. 2 is the same as the semiconductor light receiving device according to the present invention shown in FIG.
The semiconductor layer 12 as the collector electrode-attached layer forming the semiconductor stacked body 17 is omitted, and accordingly, the semiconductor layer 14 as the base layer is locally formed on the semiconductor layer 13 as the collector layer. The semiconductor light receiving device according to the present invention shown in FIG. 1 except that the electrode layer 21 is formed on the semiconductor layer 13 as the collector layer in the region where the semiconductor layer 14 is not formed. It has the same configuration as.

The semiconductor light receiving device according to the present invention shown in FIG. 2 has the same configuration as that of the semiconductor light receiving device according to the present invention shown in FIG. 1 except for the matters described above. It is obvious that the same excellent effects as those of the semiconductor light receiving device according to the present invention shown in FIG. 1 can be obtained.

[0052]

Third Embodiment Next, a third embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

In FIG. 3, parts corresponding to those in FIG. 2 are designated by the same reference numerals, and detailed description thereof will be omitted.

The semiconductor light receiving device according to the present invention shown in FIG. 3 is the same as the semiconductor light receiving device according to the present invention shown in FIG.
The semiconductor substrate 11 is made of, for example, InP, has an n-type, and has opposing main surfaces 11a ′ and 11b ′,
Then, the one main surface 11a 'is replaced with the semiconductor substrate 11' having the light incident surface 20, so that the semiconductor laminated body 17 is formed on the main surface 11b 'of the semiconductor substrate 11' in this case, and the semiconductor laminated body is formed. The semiconductor layer 12 as a collector electrode-attached layer that constitutes 17 is omitted, and accordingly, the surface of the semiconductor substrate 11 ′ opposite to the semiconductor laminated body 17 side,
Therefore, the light facing the electrode layer 23, which also functions as a reflective layer, is formed on the main surface 11a of the semiconductor substrate 11 'and on the surface 17a of the semiconductor laminate 17 opposite to the semiconductor substrate 11' side. It has the same structure as the semiconductor light receiving device according to the present invention shown in FIG. 2, except that an electrode layer 21 'having an entrance window 21a' is formed.

The semiconductor light receiving device according to the present invention shown in FIG. 3 has the same configuration as that of the semiconductor light receiving device according to the present invention shown in FIG. 2 except for the matters described above. The region facing the light incident window 21a 'of the substrate 11' is used as the incident surface 20 and the electrode layer 21 'is used as the collector electrode layer, and the same excellent effects as those of the semiconductor light receiving device according to the present invention shown in FIG. 2 can be obtained. That is clear.

[0056]

Fourth Embodiment Next, a fourth embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

4, parts corresponding to those in FIG. 1 are designated by the same reference numerals, and detailed description thereof will be omitted.

The semiconductor light receiving device according to the present invention shown in FIG. 4 is the same as the semiconductor light receiving device according to the present invention shown in FIG.
Surface 1 of semiconductor laminated body 17 opposite to the side of semiconductor substrate 11
The electrode layer 23 also serving as a reflection layer formed on 7a is
Surface 1 of semiconductor laminated body 17 opposite to the side of semiconductor substrate 11
7a, which is replaced by the electrode layer 24 having the light incident window 24a that forms the light incident surface 30, and accordingly, the main surface 11a as the surface opposite to the semiconductor laminated body 17 side of the semiconductor substrate 11 is exposed to light. The curved surface portion 11c facing the entrance window 24a and bulging outward is provided, and the reflective layer 25 made of metal is provided on the curved surface portion 11c.
It has the same configuration as that of the semiconductor light receiving device according to the present invention shown in FIG. 1 except that it is formed without being alloyed with.

The semiconductor light receiving device according to the present invention having such a configuration has the same configuration as the semiconductor light receiving device according to the present invention shown in FIG. 1 except for the above-mentioned matters, so a detailed description will be omitted. In accordance with the case of the semiconductor light receiving device according to the present invention shown in FIG. 1, a main power source is connected through a load between the electrode layers 21 and 24, and the electrode layers 22 and 2 are connected.
Connect a bias power supply between 4 and in that state, from the outside,
The light L is introduced into the semiconductor laminated body 17 on the light incident window 24a of the surface 17a of the semiconductor laminated body 17 opposite to the semiconductor substrate 11 side.
If the light is incident through the light incident surface 30 depending on the area facing
The light L is mainly absorbed in the semiconductor layer 14 (in this case, the semiconductor layer 13 is I as well as the semiconductor layer 14).
Since it is made of nGaAs, it is also absorbed in the semiconductor layer 13), and accordingly, a photocurrent flowing to the load through the electrode layers 21 and 24 is obtained.
(A) The semiconductor layers 13, 14 and 15 are a collector layer, a base layer and an emitter layer, respectively, and the semiconductor layer 12 is a collector electrode-attached layer (contact layer).
As a layer for attaching an emitter electrode (cap layer), and the electrode layer 21
And 24 respectively as a collector electrode layer and an emitter electrode layer, the function as an npn type phototransistor,
It is presented according to the case of the semiconductor light receiving device according to the present invention shown in FIG.

Further, according to the semiconductor light receiving device of the present invention shown in FIG. 4, light incident on the semiconductor laminate 17 from the outside is applied as described above and according to the case of the semiconductor light receiving device of the present invention shown in FIG. Are mainly absorbed by the semiconductor layer 14 serving as a base layer,
In this case, the reflective layer 25 is formed on the main surface 11a of the semiconductor substrate 11, which is the surface opposite to the semiconductor laminated body 17 side. Light L incident on the laminated body 17
In the middle, the light component which is not absorbed by the semiconductor layer 14 and has passed through the semiconductor layer 14 passes through the semiconductor layer 13 as a collector layer and the semiconductor layer 12 as a layer with a collector electrode toward the reflective layer 25 side. And because of that reflective layer 25,
Then, the reflected light is again mainly absorbed by the semiconductor layer 14.

In this case, the reflective layer 25 is formed on the main surface 11a of the semiconductor substrate 11 opposite to the semiconductor laminated body 17 side without alloying with the semiconductor substrate 11. Therefore, a flat interface is formed between the semiconductor substrate 11 and the reflective layer 25. Therefore, as described above, the light is absorbed by the semiconductor layer 14 in the light L entering the semiconductor stacked body 17 from the outside. When the light component that has not passed through the semiconductor layer 14 is reflected by the reflection layer 25 and reflected light is obtained, the reflected light is hardly irregularly reflected, and therefore the reflected light is converted into the light shown in FIG. As in the case of the semiconductor light receiving device according to the invention, a large amount can be absorbed mainly by the semiconductor layer 14.

Therefore, also in the case of the semiconductor light receiving device according to the present invention shown in FIG. 4, much higher photoelectric conversion efficiency can be obtained, as in the case of the semiconductor light receiving device according to the present invention shown in FIG.

[0063]

Fifth Embodiment Next, a fifth embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

In FIG. 5, parts corresponding to those in FIG. 4 are designated by the same reference numerals, and detailed description thereof will be omitted.

The semiconductor light receiving device according to the present invention shown in FIG. 5 is the same as the semiconductor light receiving device according to the present invention shown in FIG.
The semiconductor layer 12 as the collector electrode-attached layer forming the semiconductor stacked body 17 is omitted, and accordingly, the semiconductor layer 14 as the base layer is locally formed on the semiconductor layer 13 as the collector layer. The semiconductor light receiving device according to the present invention shown in FIG. 4 except that the electrode layer 21 is formed on the semiconductor layer 13 serving as the collector layer in the region where the semiconductor layer 14 is not formed. It has the same configuration as.

The semiconductor light receiving device according to the present invention shown in FIG. 5 has the same configuration as the semiconductor light receiving device according to the present invention shown in FIG. 4 except for the matters described above, and therefore detailed description thereof will be omitted. It is obvious that the same excellent effect as that of the semiconductor light receiving device according to the present invention shown in FIG. 4 can be obtained.

[0067]

Sixth Embodiment Next, a sixth embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

6, parts corresponding to those in FIG. 5 are designated by the same reference numerals, and detailed description thereof will be omitted.

The semiconductor light receiving device according to the present invention shown in FIG. 6 corresponds to the semiconductor light receiving device according to the present invention shown in FIG.
The semiconductor substrate 11 is made of, for example, InP, has an n-type, and has opposing main surfaces 11a ′ and 11b ′,
Then, the one main surface 11a 'is replaced with a semiconductor substrate 11' having a curved surface portion 11c 'similar to the curved surface portion 11c of the semiconductor substrate 11, and accordingly, the semiconductor laminated body 1 is formed.
7 is formed on the main surface 11b 'of the semiconductor substrate 11' in this case, the semiconductor layer 12 as the collector electrode-attached layer forming the semiconductor laminate 17 is omitted, and accordingly, the semiconductor substrate 11 is formed. Of the semiconductor substrate 1 of the semiconductor laminate 17 on the curved surface 11c 'of the main surface 11a' of the semiconductor substrate 11 '.
5 except that an electrode layer 26 also serving as a reflection layer is formed facing the light incident window 24a of the electrode layer 24 formed on the surface 17a opposite to the 1'side. The semiconductor light receiving device according to the present invention shown in FIG.

The semiconductor light receiving device according to the present invention shown in FIG. 6 has the same structure as the semiconductor light receiving device according to the present invention shown in FIG. 5 except for the matters described above. It is obvious that the same advantageous effect as in the case of the semiconductor light receiving device according to the present invention shown in FIG. 4 can be obtained by using the electrode layer 26 which also serves as a layer as the collector electrode layer.

[0071]

Seventh Embodiment Next, a seventh embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

The semiconductor light receiving device according to the present invention shown in FIG. 7 has the structure described below.

That is, for example, main surfaces 71a and 71b which are made of InP and have p-type and are flat and opposed to each other are flat.
And a semiconductor layer 73 made of, for example, InP and having a p-type, and a semiconductor layer 74 made of, for example, an InGaAs system as a light absorption layer, are formed on one main surface 71b of the semiconductor substrate 71. For example, a semiconductor laminated body 77 having a configuration in which a semiconductor layer 75 made of, for example, InP and having n type and a semiconductor layer 76 made of, for example, InP and having n ⁺ type are laminated in this order is formed. ..

On the main surface 71a as the surface of the semiconductor substrate 71 opposite to the semiconductor laminated body 77 side, the light incident surface 80 formed by the surface of the semiconductor substrate 71 opposite to the semiconductor laminated body 77 side.
To form the electrode layer 81 having a light incident window 81a.
And the semiconductor substrate 71 of the semiconductor stack 77 is formed.
On the upper surface of the semiconductor layer 76 as the surface 77a opposite to the side, the semiconductor layer 83 also serving as the reflective layer is provided with the semiconductor laminated body 77.
And the semiconductor layer 76 are not alloyed with the light incident window 81a. In this case, the electrode layer 83 which also serves as a reflection layer has a structure in which, for example, an electrode layer made of W and an electrode layer made of WSi are laminated in this order.

The above is the configuration of the seventh embodiment of the semiconductor light receiving device according to the present invention.

According to the semiconductor light receiving device of the present invention having such a structure, the main power source is connected through the load between the electrode layers 81 and 83, and in that state, the light L is externally supplied.
When the light L is incident on the inside of the semiconductor laminated body 77 through the light incident surface 80 of the surface 71a of the semiconductor substrate 71 opposite to the semiconductor laminated body 77 side, the light L is absorbed in the semiconductor layer 74 as a light absorbing layer. , And the electrode layer 81
And 83 to obtain a photocurrent flowing to the load, the semiconductor layer 76 functions as a pin-type photodiode using the electrode-attached layer.

Further, according to the semiconductor light receiving device of the present invention shown in FIG. 7, the semiconductor laminated body 7 is externally applied as described above.
The light L incident on the light absorbing layer 7 is absorbed by the semiconductor layer 74 serving as the light absorbing layer, thereby exhibiting the function as the above-described pin type photodiode.
Since 3 also serves as a reflection layer, the semiconductor laminate 7 is externally applied.
In the light L that is incident on the inside 7 of the light, the light component that has not been absorbed by the semiconductor layer 74 and has passed through the semiconductor layer 74 passes through the semiconductor layer 75 and the semiconductor layer 76 as the electrode attachment layer and is directed to the electrode layer 83 side. , Then, due to its electrode layer 83, and
The reflected light is again mainly absorbed by the semiconductor layer 74.

In this case, the electrode layer 83 is formed on the surface 77a of the semiconductor laminated body 77 opposite to the semiconductor substrate 71 side without alloying with the semiconductor laminated body 77. Therefore, a flat interface is formed between the semiconductor stacked body 77 and the electrode layer 83. Therefore, as described above, in the light L entering the semiconductor stacked body 77 from the outside,
When the light component that has not been absorbed by the semiconductor layer 74 and has passed through the semiconductor layer 74 is reflected by the electrode layer 83 to obtain reflected light, the reflected light is hardly irregularly reflected, and therefore the reflected light is The semiconductor layer 74 as a light absorption layer is remarkably large in number.
Can be absorbed by.

Therefore, also in the case of the semiconductor light receiving device according to the present invention shown in FIG. 1, much higher photoelectric conversion efficiency can be obtained, as in the case of the semiconductor light receiving device according to the present invention shown in FIG.

[0080]

Eighth Embodiment Next, an eighth embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

In FIG. 8, parts corresponding to those in FIG. 7 are designated by the same reference numerals, and detailed description thereof will be omitted.

The semiconductor light receiving device according to the present invention shown in FIG. 8 is the same as the semiconductor light receiving device according to the present invention shown in FIG.
The semiconductor substrate 71 is replaced with a semiconductor substrate 71 ′ which is made of, for example, InP, has an insulating property, and has main surfaces 71a ′ and 71b ′ which face each other, and accordingly, the semiconductor laminated body 77 has a semiconductor layer in this case. Main surface 7 of substrate 71 '
1b 'and the main surface 7 of the semiconductor substrate 71'.
1a as the light incident surface 80, and in the region where the semiconductor layer 74 is not formed on the semiconductor layer 73, the electrode layer 8 is formed.
1 has the same configuration as the semiconductor light receiving device according to the present invention shown in FIG.

The semiconductor light receiving device according to the present invention shown in FIG. 8 has the same configuration as the semiconductor light receiving device according to the present invention shown in FIG. 7 except for the matters described above, and therefore detailed description thereof will be omitted. It is obvious that the same excellent effects as those of the semiconductor light receiving device according to the present invention shown in FIG. 7 can be obtained.

[0084]

[Ninth Embodiment] Next, a ninth embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

In FIG. 9, parts corresponding to those in FIG. 7 are designated by the same reference numerals, and detailed description thereof will be omitted.

The semiconductor light receiving device according to the present invention shown in FIG. 9 is the same as the semiconductor light receiving device according to the present invention shown in FIG.
7 except that the semiconductor stack 77 is formed without the semiconductor layer 74 as the light absorption layer, and accordingly the pn junction 94 is formed between the semiconductor layers 73 and 75. It has the same configuration as the semiconductor light receiving device according to the present invention shown.

The semiconductor light receiving device according to the present invention shown in FIG. 9 has the same configuration as the semiconductor light receiving device according to the present invention shown in FIG. 7 except for the matters described above, and therefore a detailed description thereof will be omitted. "pin type photo diode"
The n-type photo diode "and" semiconductor layer 74 as a light absorption layer "are read as" pn junction 94 ", and the same excellent effect as in the case of the semiconductor light receiving device according to the present invention shown in FIG. It is clear that

[0088]

Tenth Embodiment Next, a tenth embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

In FIG. 10, parts corresponding to those in FIGS. 8 and 9 are designated by the same reference numerals, and detailed description thereof will be omitted.

The semiconductor light receiving device according to the present invention shown in FIG. 10 is the same as the semiconductor light receiving device according to the present invention shown in FIG.
The semiconductor substrate 71 is replaced with a semiconductor substrate 71 'having an insulating property similar to that of the semiconductor light receiving device according to the present invention shown in FIG. 8, and the electrode layer 81 is accordingly formed on the semiconductor layer 73. Except for the above, it has the same configuration as the semiconductor light receiving device according to the present invention shown in FIG.

The semiconductor light receiving device according to the present invention shown in FIG. 10 has the same structure as the semiconductor light receiving device according to the present invention shown in FIG. 9 except for the matters described above, and therefore detailed description thereof will be omitted. It is obvious that the same excellent effects as those of the semiconductor light receiving device according to the present invention shown in FIG. 9 can be obtained.

[0092]

Eleventh Embodiment Next, an eleventh embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

In FIG. 11, parts corresponding to those in FIGS. 7 and 8 are designated by the same reference numerals, and detailed description thereof will be omitted.

The semiconductor light receiving device according to the present invention shown in FIG. 11 is the same as the semiconductor light receiving device according to the present invention shown in FIG.
Surface 7 of semiconductor laminated body 77 opposite to the side of semiconductor substrate 71
The electrode layer 83 which also functions as a reflective layer formed on 7a is
Surface 7 of semiconductor laminated body 77 opposite to the side of semiconductor substrate 71
7a, which is replaced with an electrode layer 84 having a light incident window 84a forming a light incident surface 90, and accordingly, the main surface 71a as a surface opposite to the semiconductor laminated body 77 side of the semiconductor substrate 71 is exposed to light. The curved surface portion 71c facing the entrance window 84a and bulging outward is provided, and the reflective layer 85 made of metal is not alloyed with the semiconductor substrate 71 on the curved surface portion 71c. Except that the electrode layer 81 is formed on the semiconductor layer 73 as in the case of the semiconductor light receiving device according to the present invention shown in FIG.
It has the same structure as the semiconductor light receiving device according to the present invention shown in FIG.

The semiconductor light receiving device according to the present invention having such a configuration has the same configuration as the semiconductor light receiving device according to the present invention shown in FIG. 7 except for the matters described above, and therefore a detailed description thereof will be omitted. According to the case of the semiconductor light receiving device according to the present invention shown in FIG. 7, a main power source is connected through a load between the electrode layers 81 and 84, and in that state, from the outside,
The light L is introduced into the semiconductor laminated body 77 by the light incident window 84a on the surface 77a of the semiconductor laminated body 77 opposite to the semiconductor substrate 71 side.
If the light is incident through the light incident surface 90 due to the area facing
The light L is absorbed by the semiconductor layer 74 serving as a light absorption layer, and accordingly, a photocurrent flowing through the electrode layers 81 and 84 to the load is obtained, whereby a pin type photodiode is obtained. The same function as that of the semiconductor light receiving device according to the present invention shown in FIG. 7 is exhibited.

Further, according to the semiconductor light receiving device of the present invention shown in FIG. 7, the light incident on the semiconductor laminated body 77 from the outside is applied in the same manner as the case of the semiconductor light receiving device of the present invention shown in FIG. 7 as described above. However, the semiconductor layer 7 as the light absorption layer
When it is absorbed by 4, it exhibits the function as the above-mentioned pin type photodiode, but in this case, on the main surface 71a as the surface opposite to the semiconductor laminated body 77 side of the semiconductor substrate 71, Since the reflective layer 85 is formed,
In the light L that is incident on the inside of the semiconductor stacked body 77 from the outside, the light that has not been absorbed by the semiconductor layer 74 and has passed through the semiconductor layer 74 passes through the semiconductor layer 73 and the semiconductor substrate 71 and is reflected by the reflective layer 8.
5 side, and then is reflected by the reflective layer 85, and the reflected light is again absorbed by the semiconductor layer 74.

In this case, the reflective layer 85 is formed on the main surface 71a of the semiconductor substrate 71, which is the surface opposite to the semiconductor laminated body 77 side, without alloying with the semiconductor substrate 71. Therefore, a flat interface is formed between the semiconductor substrate 71 and the reflective layer 85. Therefore, as described above, the light is absorbed by the semiconductor layer 74 in the light L entering the semiconductor stacked body 77 from the outside. When the light component that has not passed through the semiconductor layer 74 is reflected by the reflection layer 85 and reflected light is obtained, the reflected light is hardly irregularly reflected, and therefore the reflected light is converted into the book shown in FIG. As in the case of the semiconductor light receiving device according to the invention, a large amount can be absorbed in the semiconductor layer 74.

Therefore, also in the case of the semiconductor light receiving device according to the present invention shown in FIG. 11, much higher photoelectric conversion efficiency can be obtained as in the case of the semiconductor light receiving device according to the present invention shown in FIG.

[0099]

[Embodiment 12] Next, a twelfth embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

In FIG. 12, parts corresponding to those in FIGS. 11 and 8 are designated by the same reference numerals, and detailed description thereof will be omitted.

The semiconductor light-receiving device according to the present invention shown in FIG. 12 is a semiconductor light-receiving device according to the present invention shown in FIG. 11, in which the semiconductor substrate 71 is opposed to the semiconductor light-receiving device according to the present invention shown in FIG. Faces 71a 'and 71
The structure similar to that of the semiconductor light-receiving device according to the present invention shown in FIG. 11 except that it has a curved surface portion 71c 'on the main surface 71a' and is replaced by an insulating semiconductor substrate 71 '. Have.

The semiconductor light receiving device according to the present invention shown in FIG. 12 has the same structure as the semiconductor light receiving device according to the present invention shown in FIG. 11 except for the matters described above, and therefore detailed description thereof will be omitted. It is clear that the same excellent effect as that of the semiconductor light receiving device according to the present invention shown in FIG. 11 can be obtained.

[0103]

[Embodiment 13] Next, a thirteenth embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

13, parts corresponding to those in FIG. 11 are designated by the same reference numerals, and detailed description thereof will be omitted.

The semiconductor photodetector according to the present invention shown in FIG. 13 is the same as the semiconductor photodetector according to the present invention shown in FIG. 11, except that the semiconductor laminate 77 has the same light absorption layer as in the case of the semiconductor photodetector according to the present invention shown in FIG. Semiconductor layer 74 as
Therefore, it has the same structure as the semiconductor light receiving device according to the present invention shown in FIG. 11 except that the pn junction 94 is formed between the semiconductor layers 73 and 74.

The semiconductor light receiving device according to the present invention shown in FIG. 13 has the same configuration as that of the semiconductor light receiving device according to the present invention shown in FIG. 11 except for the matters described above. "Pin type photodiode" is replaced with "pn type photodiode" and "semiconductor layer 74" is replaced with "pn junction 94". It is clear that the above-mentioned effects can be obtained.

[0107]

[Embodiment 14] Next, a fourteenth embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

In FIG. 14, parts corresponding to those in FIG. 12 are designated by the same reference numerals, and detailed description thereof will be omitted.

The semiconductor light receiving device according to the present invention shown in FIG. 14 is the same as the semiconductor light receiving device according to the present invention shown in FIG. Semiconductor layer 7 as
4 and therefore has a pn between the semiconductor layers 73 and 74.
It has the same configuration as the semiconductor light receiving device according to the present invention shown in FIG. 12 except that the junction 94 is formed.

The semiconductor light-receiving device according to the present invention shown in FIG. 14 has the same structure as the semiconductor light-receiving device according to the present invention shown in FIG. 12 except for the matters described above. Therefore, detailed description will be omitted. The "pin type photodiode" is replaced with "pn type photodiode" and the "semiconductor layer 74" is replaced with "pn junction 94". It is clear that the above-mentioned effects can be obtained.

[0111]

Fifteenth Embodiment Next, a fifteenth embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

In FIG. 15, parts corresponding to those in FIG. 11 are designated by the same reference numerals, and detailed description thereof will be omitted.

In the semiconductor light receiving device according to the present invention shown in FIG. 15, in the semiconductor light receiving device according to the present invention shown in FIG. 11, the reflective layer 85 is replaced with an electrode layer 95 which also serves as a reflective layer, and accordingly the electrode layer 81 is replaced. 11 has the same configuration as that of the semiconductor light receiving device according to the present invention shown in FIG. 11, except that is omitted.

The semiconductor light receiving device according to the present invention shown in FIG. 15 has the same structure as the semiconductor light receiving device according to the present invention shown in FIG. 11 except for the matters described above. Therefore, a detailed description thereof will be omitted. It is obvious that the same advantageous effect as in the case of the semiconductor light receiving device according to the present invention shown in FIG. 11 in which the "reflecting layer 85" is read as "the electrode layer 95 also serving as the reflecting layer" can be obtained.

[0115]

Sixteenth Embodiment Next, a sixteenth embodiment of the semiconductor light receiving device according to the present invention will be described with reference to FIG.

In FIG. 16, parts corresponding to those in FIGS. 13 and 15 are designated by the same reference numerals, and detailed description thereof will be omitted.

In the semiconductor light receiving device according to the present invention shown in FIG. 16, in the semiconductor light receiving device according to the present invention shown in FIG. 15, the reflecting layer 85 is the same as in the case of the semiconductor light receiving device according to the present invention shown in FIG. It has the same configuration as the semiconductor light receiving device according to the present invention shown in FIG. 13, except that the electrode layer 95 also serves as a substrate and the electrode layer 81 is omitted accordingly.

The semiconductor light receiving device according to the present invention shown in FIG. 16 has the same configuration as the semiconductor light receiving device according to the present invention shown in FIG. 13 except for the matters described above. Therefore, detailed description will be omitted. The reflective layer 85 "is replaced with the" electrode layer 95 which also functions as a reflective layer ", and the same excellent effect as that of the semiconductor light receiving device according to the present invention shown in FIG. 13 can be obtained.
1 is clear.

In the above description, only a few embodiments of the present invention are shown. For example, in the structure of the semiconductor light receiving device according to the present invention shown in FIGS. 1 to 4, the conventional semiconductor light receiving device described in FIG. 17 is used. According to the case of the device, the electrode layer 22 for the semiconductor layer 14 as the base layer is omitted,
It will be apparent that the same effect as the above can be obtained.

In the structure of the semiconductor light receiving device according to the present invention shown in FIGS. 1 to 4, the semiconductor layers 13, 14 and 1 are formed.
It will be apparent that 5 can be respectively used as an emitter layer, a base layer and a collector layer to obtain the same effect as described above.

Further, in the structure of the semiconductor light receiving device according to the present invention shown in FIGS. 1 to 4, the semiconductor laminated body 17 may have a structure in which the semiconductor layer 16 as a cap layer is omitted, and FIGS. In the structure of the semiconductor light receiving device according to the present invention shown in FIG. 5, the surface of the semiconductor substrate 11 opposite to the semiconductor laminated body 17 side is a flat surface extending parallel to the semiconductor laminated body 17 side of the semiconductor substrate 11. Alternatively, the reflective layer 25 may be formed on the surface thereof.

Further, in the structure of the semiconductor light receiving device according to the present invention shown in FIGS. 3 and 6, an n ⁺ type semiconductor layer is formed on the surface of the semiconductor substrate 11 ′ opposite to the semiconductor laminated body 17 side. The semiconductor substrate 11 'forming the semiconductor layer may be configured as the semiconductor substrate according to the present invention, and in the configuration of the semiconductor light receiving device according to the present invention shown in FIG. 3 and FIG. A structure in which a semiconductor region having an n ⁺ type is formed on the side opposite to the semiconductor laminated body 17 side in 11 and the semiconductor substrate 11 forming the semiconductor region is also a semiconductor substrate according to the present invention. It can also be

Furthermore, in the semiconductor light receiving device according to the present invention shown in FIGS. 11 to 16, the semiconductor substrate 71 or 7 is used.
The surface of the 1'side opposite to the semiconductor laminated body 77 side may be a flat surface.

In each of the above embodiments, "n ⁺
"Type" and "n type" are "p ⁺ type", "p type", and "p type"
Can be replaced with "n-type", and various modifications and changes can be made without departing from the spirit of the present invention.

[Brief description of drawings]

FIG. 1 is a schematic sectional view showing a first embodiment of a semiconductor light receiving device according to the present invention.

FIG. 2 is a schematic sectional view showing a second embodiment of the semiconductor light receiving device according to the present invention.

FIG. 3 is a schematic sectional view showing a third embodiment of the semiconductor light receiving device according to the present invention.

FIG. 4 is a schematic cross-sectional view showing a fourth embodiment of the semiconductor light receiving device according to the present invention.

FIG. 5 is a schematic cross-sectional view showing a fifth embodiment of a semiconductor light receiving device according to the present invention.

FIG. 6 is a schematic sectional view showing a sixth embodiment of the semiconductor light receiving device according to the present invention.

FIG. 7 is a schematic cross-sectional view showing a seventh embodiment of a semiconductor light receiving device according to the present invention.

FIG. 8 is a schematic cross-sectional view showing an eighth embodiment of the semiconductor light receiving device according to the present invention.

FIG. 9 is a schematic cross-sectional view showing a ninth embodiment of a semiconductor light receiving device according to the present invention.

FIG. 10 is a schematic sectional view showing a tenth embodiment of a semiconductor light receiving device according to the present invention.

FIG. 11 is a schematic sectional view showing an eleventh embodiment of a semiconductor light receiving device according to the present invention.

FIG. 12 is a schematic sectional view showing a twelfth embodiment of a semiconductor light receiving device according to the present invention.

FIG. 13 is a schematic sectional view showing a thirteenth embodiment of a semiconductor light receiving device according to the present invention.

FIG. 14 is a schematic sectional view showing a fourteenth embodiment of a semiconductor light receiving device according to the present invention.

FIG. 15 is a schematic sectional view showing a fifteenth embodiment of a semiconductor light receiving device according to the present invention.

FIG. 16 is a schematic sectional view showing a sixteenth embodiment of a semiconductor light receiving device according to the present invention.

FIG. 17 is a schematic cross-sectional view showing a conventional semiconductor light receiving device.

[Explanation of symbols]

11, 11 'Semiconductor substrate 11a, 11a', 11b, 11b 'Main surface 11c Curved surface portion 12, 13, 14, 15, 16 Semiconductor layer 20 Light incident surface 21, 21', 22 Electrode layer 21a 'Light incident window 23 Reflection Electrode layer also serving as a layer 17 Semiconductor laminated body 17a Semiconductor laminated body 1
7 surface 21, 22, 23, 24 electrode layer 24a light incident window 25 reflective layer 26 electrode layer also serving as a reflective layer 30 light incident surface 71, 71 'semiconductor substrate 71a, 71b, 71a', 71b 'main surface 71c, 71c 'curved surface portion 73, 74, 75, 76 semiconductor layer 77 semiconductor laminated body 80 light incident surface 81, 83 electrode layer 81a light incident window 84 electrode layer 84a light incident window 85 reflective layer 90 light incident surface 94 pn junction 95 reflective layer Electrode layer that doubles as light

Claims (6)

[Claims] 1. A semiconductor substrate, a first semiconductor layer formed on the semiconductor substrate and having a first conductivity type, and a second semiconductor layer having a second conductivity type opposite to the first conductivity type. A semiconductor layered body having a configuration in which a semiconductor layer of 1. and a third semiconductor layer having a first conductivity type are stacked in that order; a first electrode layer for the first semiconductor layer; And a second electrode layer for the semiconductor layer, and a surface of the semiconductor substrate opposite to the semiconductor laminate side is a light incident surface, and a surface of the semiconductor laminate opposite to the semiconductor substrate side. A semiconductor light receiving device, wherein an electrode layer also serving as a reflective layer is formed on the upper surface as the second electrode layer without alloying with the semiconductor laminated body. 2. A semiconductor substrate, a first semiconductor layer having a first conductivity type on the semiconductor substrate, and a second semiconductor having a second conductivity type opposite to the first conductivity type. A semiconductor laminated body having a structure in which a layer and a third semiconductor layer having a first conductivity type are laminated in that order; a first electrode layer for the first semiconductor layer; and a third electrode layer for the first semiconductor layer. A second electrode layer for the semiconductor layer, and a surface of the semiconductor laminated body opposite to the semiconductor substrate side is used as a light incident surface, and a surface of the semiconductor substrate opposite to the semiconductor laminated body side is formed. A semiconductor light receiving device, wherein the reflective layer is formed without alloying with the semiconductor substrate. 3. A semiconductor substrate, a first semiconductor layer having a first conductivity type on the semiconductor substrate, and a second semiconductor having a second conductivity type opposite to the first conductivity type. A semiconductor laminated body having a structure in which a layer and a third semiconductor layer having a first conductivity type are laminated in that order; a first electrode layer for the first semiconductor layer; and a third electrode layer for the first semiconductor layer. A second electrode layer for the semiconductor layer, and a surface of the semiconductor laminated body opposite to the semiconductor substrate side is used as a light incident surface, and a surface of the semiconductor substrate opposite to the semiconductor laminated body side is formed. A semiconductor light receiving device, wherein an electrode layer also serving as a reflection layer is formed as the first electrode layer without being alloyed with the semiconductor substrate. 4. A semiconductor substrate, a first semiconductor layer having a first conductivity type on the semiconductor substrate, and a second semiconductor layer having a second conductivity type opposite to the first conductivity type. And a semiconductor laminated body having a structure in which the third semiconductor layer as a light absorption layer is laminated in this order, with or without a third semiconductor layer interposed therebetween, and a first electrode layer for the first semiconductor layer. A second electrode layer for the second semiconductor layer, a surface of the semiconductor substrate opposite to the semiconductor laminate side is a light incident surface, and the surface is opposite to the semiconductor substrate side of the semiconductor laminate. A semiconductor light receiving device, wherein an electrode layer also serving as a reflective layer is formed on the side surface as the second electrode layer without alloying with the semiconductor laminated body. 5. A semiconductor substrate, a first semiconductor layer having a first conductivity type on the semiconductor substrate, and a second semiconductor layer having a second conductivity type opposite to the first conductivity type. And a semiconductor laminated body having a structure in which the third semiconductor layer as a light absorption layer is laminated in this order, with or without a third semiconductor layer interposed therebetween, and a first electrode layer for the first semiconductor layer. A second electrode layer for the second semiconductor layer, and a surface of the semiconductor laminate opposite to the semiconductor substrate side is a light incident surface, and the surface is opposite to the semiconductor laminate side of the semiconductor substrate. A semiconductor light receiving device, wherein a reflection layer is formed on the side surface without alloying with the semiconductor substrate. 6. A semiconductor substrate, a first semiconductor layer having a first conductivity type on the semiconductor substrate, and a second semiconductor layer having a second conductivity type opposite to the first conductivity type. And a semiconductor laminated body having a structure in which the third semiconductor layer as a light absorption layer is laminated in this order, with or without a third semiconductor layer interposed therebetween, and a first electrode layer for the first semiconductor layer. A second electrode layer for the second semiconductor layer, and a surface of the semiconductor laminate opposite to the semiconductor substrate side is a light incident surface, and the surface is opposite to the semiconductor laminate side of the semiconductor substrate. A semiconductor light receiving device, wherein an electrode layer also serving as a reflective layer is formed on the side surface as the first electrode layer without alloying with the semiconductor substrate.