JPH0594011A - Positive type photoresist composition - Google Patents

Abstract

PURPOSE:To obtain the positive type photoresist composition high in sensitivity and capable of forming a resist pattern excellent in dimensional stability and adapted to the tendency rapidly advancing to ultraminute microfabrication in the semiconductor manufacture field, and not deteriorated in resist performance by prebaking conditions, high in antihalation effect and accordingly high in resolution. CONSTITUTION:The positive type photoresist composition comprises an alkali- soluble resin, a compound having a 1,2-naphthoquinone-diazido group, and at least one of compounds, in an amount of 0.1-10weight% of the total solid constituent, represented by formula I in which each of R1-R14 is, independently, H, OH, halogen, carboxy, nitro, alkyl, alkoxy, di(alkyl)amino, or the residual organic group of single bond, and at least one of R3 and R8 is OH.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a positive photoresist composition containing an alkali-soluble resin and a 1,2-naphthoquinonediazide compound, and more particularly, it relates to a substrate having irregularities and reflectance. The present invention relates to a positive photoresist composition having excellent fine pattern forming ability even on a high substrate. The positive photoresist composition according to the present invention is a semiconductor wafer or glass,
It is applied to a substrate such as ceramics or metal by a spin coating method or a roller coating method to a thickness of 0.5 to 3 μm. After that, it is heated and dried, and a circuit pattern or the like is baked through irradiation of ultraviolet rays through an exposure mask and developed to form a positive image. Further, by etching with this positive image as a mask, it is possible to perform patterning on the substrate. Typical fields of application are semiconductor manufacturing processes such as ICs, circuit boards such as liquid crystals and thermal heads, and other photo-ablation processes.

[0002]

2. Description of the Related Art As a positive photoresist composition,
Generally, a composition containing an alkali-soluble resin and a naphthoquinonediazide compound as a photosensitive material is used. For example, USP-3,666,473 as "Novolak type phenol resin / naphthoquinone diazide substituted compound"
No., USP-4,115,128 and USP-4,1
73, 470, etc., and the most typical composition of "Novolak resin consisting of cresol-formaldehyde / trihydroxybenzophenone-1,2-naphthoquinone diazide sulfonate" is Thompson "Introduction Tow."・ Microlithography "(LF Thompson" Introducti "
on to Microlithography ”)
(ACS publication, No. 219, P112 to 121). Novolac resin as a binder is particularly useful for this application because it can be dissolved in an alkaline aqueous solution without swelling, and when it is used as a mask for etching, it gives a high resistance to plasma etching. Is. Further, the naphthoquinonediazide compound used for the photosensitive material acts as a dissolution inhibitor which lowers the alkali solubility of the novolak resin by itself, but when decomposed by light irradiation, an alkali-soluble substance is generated and rather the alkali solubility of the novolak resin is increased. It is unique in that it acts to enhance it, and is particularly useful as a photosensitive material for a positive photoresist because of its large change in properties with respect to light. From this point of view, many positive photoresists containing a novolak resin and a naphthoquinonediazide photosensitive material have been developed and put into practical use.

However, even though the positive type photoresist boasts such a high resolution, when patterned on a substrate having a high reflectance such as an aluminum substrate, it is affected by reflected light (halation) from the substrate, and an image is formed. Is blurred or line width control becomes extremely difficult. This phenomenon becomes more remarkable when there is a step on the substrate. In order to solve such a problem (prevent halation), it is known to add a light absorbing material. For example, Japanese Examined Patent Publication No. 51-37562 contains a dye, oil yellow (having the following structural formula), which has a light absorption property in the ultraviolet region.

[0004]

[Chemical 2]

The light transmittance of the photoresist layer is reduced, the light reflected by the surface of the substrate and transmitted through the photoresist layer is reduced, and the wraparound of the light to the region which should not be irradiated with the ultraviolet rays is reduced, thereby improving the resolution. A method of preventing degradation is disclosed. However, in the case of using this dye, after coating the photoresist composition solution on the substrate, the residual solvent is removed, and at the same time, at the time of prebaking performed to improve the adhesion to the substrate, the light absorption property is increased. Since a part of the material sublimes from the photoresist film, there are drawbacks that the antihalation effect is significantly reduced, and the resist performance of sensitivity is greatly affected by prebaking conditions.

JP-A-55-36838 discloses a light absorbent (1-alkoxy-) having improved sublimation properties during prebaking.
4- (4'-N, N-dialkylaminophenylazo)
Benzene) derivatives have been disclosed, but when this light absorber is compounded with a normal positive photoresist, there is a drawback that the sensitivity is remarkably reduced. In addition, JP-A-59-1
In the case of using the alkali-soluble azo compound disclosed in No. 42538, there is little sensitivity decrease and variation in sensitivity due to the light-absorbing material, but it is not sufficiently satisfactory in terms of the antihalation effect, and it is not possible to use it in the recent semiconductor industry. The current situation is that it cannot cope with rapid miniaturization of processing dimensions. Further, JP-A-1-241546 discloses a system in which a UV absorber and a gallic acid ester or a polyhydroxybenzophenone and a 1,2-naphthoquinonediazide (and / or -4-) sulfonic acid ester are used in combination. However, it is hard to say that even these systems have sufficient antihalation ability.

[0007]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a conventional photosensitive composition as described above in order to cope with the rapid miniaturization of processing dimensions in the field of semiconductor device manufacturing. It is an object of the present invention to provide a positive photoresist composition capable of forming a resist pattern having excellent dimensional stability while overcoming the drawbacks. That is, the object of the present invention is to
It is to provide a positive photoresist composition which has high sensitivity, does not deteriorate the resist performance due to pre-baking conditions, and has a high antihalation effect, and therefore can form a resist pattern having high resolution. ..

[0008]

Means for Solving the Problems As a result of diligent studies, the present inventors have found that a compound having a specific structure that acts as a light absorber on a positive photosensitive resin composition containing a specific quinonediazide compound and an alkali-soluble novolak resin. It has been found that the above object can be achieved by the addition of the above, and the present invention has been completed based on this finding. That is, the object of the present invention is to provide a positive photoresist composition comprising an alkali-soluble resin and a compound containing a 1,2-naphthoquinonediazide group, and further to use at least one of the compounds represented by the following general formula (I). It has been achieved by a positive photoresist composition characterized by containing 0.1 to 10% by weight of solids.

[0009]

[Chemical 3]

Here, R _{1 to} R ₁₄ may be the same or different and each is a hydrogen atom, a hydroxyl group, a halogen atom, a carboxyl group, a nitro group, an alkyl group, an alkoxy group, a di (alkyl) amino group, or a monovalent group. Represents an organic residue, R ₃ ,
At least one of R ₈ represents a hydroxyl group.

The present invention will be described in detail below. In R _{1 to} R ₄ of the above general formula (I), the alkyl group is a methyl group, an ethyl group, a propyl group, an isopropyl group, n-
Butyl group, isobutyl group, sec-butyl group, t-butyl group, pentyl group, isopentyl group, neopentyl group,
An alkyl group having 1 to 5 carbon atoms such as t-pentyl group is preferable, and an alkoxy group having 1 to 5 carbon atoms such as methoxy group, ethoxy group, propoxy group, isopropoxy group, butoxy group, pentyloxy group is preferable. The halogen atom is preferably a chlorine atom, a bromine atom or an iodine atom, and the dialkylamino group is preferably a dialkylamino group having 1 to 3 carbon atoms such as dimethylamino group, diethylamino group and dipropylamino group. As the residue, for example,

[0012]

[Chemical 4]

Examples thereof include, but are not limited to, these groups. Here, R ₁₅ is a hydrogen atom, a hydroxyl group,
It represents an alkyl group, an alkoxy group or a carboxyl group.

The compound represented by the general formula (I) acts as a light absorbent, and specific examples thereof include the following (1) to (14).
The compounds that can be used in the present invention are not limited to these.

[0015]

[Chemical 5]

[0016]

[Chemical 6]

[0017]

[Chemical 7]

These compounds can be added alone or in combination of two or more kinds in an amount of 0.1 to 10% by weight, preferably 0.3 to 5% by weight, based on the total solid content. If the amount added is less than this, the anti-halation effect is not sufficient,
Further, if it is larger than this, precipitation or the like occurs, which is not preferable.

The compound used as the light absorber in the present invention is
For example, US Patents 995494, 1218232, and 1
582909, 980251, 1021364, 1004609, 10046010, 987799,
978801, 978802, 950359, 1034173, German Patent 209535, 19872.
9 or the like, or by the method described in J. A.
C. S. Vol. 47, 198 (1925), the method of Gomberg et al. Can be used for the synthesis, or a commercially available product can be used as it is. These light absorbing agents of the present invention can also be used in combination with other known light absorbing agents.

Examples of the alkali-soluble resin used in the present invention include novolak resin, acetone-pyrogallol resin, polyhydroxystyrene and derivatives thereof. A novolak resin is particularly preferable, and it is obtained by condensing a predetermined monomer as a main component with an aldehyde in the presence of an acidic catalyst. As the predetermined monomer, phenol / m-cresol / p-cresol / o
-Cresols such as cresol, 2,5-xylenol, 3,5-xylenol, 3,4-xylenol, 2,
Xylenols such as 3-xylenol, alkylphenols such as o-ethylphenol / m-ethylphenol / p-ethylphenol / pt-butylphenol, 2,3,5-trimethylphenol, 2,3,4-
Trialkylphenols such as trimethylphenol and 2,3,6-trimethylphenol, p-methoxyphenol, m-methoxyphenol, 3,5-dimethoxyphenol, 2-methoxy-4-methylphenol, m
-Ethoxyphenol / p-ethoxyphenol, m-
Propoxyphenol / p-Propoxyphenol / m
-Alkoxyphenols such as butoxyphenol / p-butoxyphenol, bisalkylphenols such as 2-methyl-4-isopropylphenol, o-chlorophenol / m-chlorophenol / p-chlorophenol / dihydroxybiphenyl / bisphenol A hydroxy aromatic compound such as A. phenylphenol, resorcinol, and naphthol can be used alone or in combination of two or more, but is not limited thereto.

The aldehydes include formaldehyde, paraformaldehyde, acetaldehyde, propylaldehyde, benzaldehyde, phenylaldehyde, α-phenylpropylaldehyde, β-phenylpropylaldehyde, o-hydroxybenzaldehyde,
m-hydroxybenzaldehyde, p-hydroxybenzaldehyde, o-chlorobenzaldehyde, m-chlorobenzaldehyde, p-chlorobenzaldehyde, o
-Nitrobenzaldehyde, m-nitrobenzaldehyde, p-nitrobenzaldehyde, o-methylbenzaldehyde, m-methylbenzaldehyde, p-ethylbenzaldehyde, pn-butylbenzaldehyde, furfural, chloroacetaldehyde and acetals thereof, such as chloroacetaldehyde diethyl. Although acetal or the like can be used, formaldehyde is preferable among them. These aldehydes may be used alone or in combination of two or more. As the acidic catalyst, hydrochloric acid, sulfuric acid, formic acid, acetic acid, oxalic acid or the like can be used. The weight average molecular weight of the novolak resin thus obtained is preferably in the range of 2000 to 30000. If it is less than 2,000, the film loss of the unexposed area after development is large, and if it exceeds 30,000, the developing speed becomes low. Particularly suitable is 6000 to 20000
The range is. Here, the weight average molecular weight is defined by the polystyrene conversion value of gel permeation chromatography.

As the photosensitive material used in the present invention, an esterified product of the following polyhydroxy compound with 1,2-naphthoquinonediazide-5-sulfonyl chloride and / or 1,2-naphthoquinonediazide-4-sulfonyl chloride is used. be able to. As the polyhydroxy compound, 2,3,4-trihydroxyacetophenone,
2,3,4-trihydroxyphenyl pentyl ketone,
Polyhydroxyphenyl alkyl ketones such as 2,3,4-trihydroxyphenylhexyl ketone, bis (2,4-dihydroxyphenyl) methane, bis (2,2
3,4-trihydroxyphenyl) methane, bis (2,4-dihydroxyphenyl) propane-1, bis (2,3,4-trihydroxyphenyl) propane-
1, bis ((poly)) such as nordihydroguaiaretic acid
Hydroxyphenyl) alkanes, bis (2,3,4-
Trihydroxybenzoyl) methane, bis (3-acetyl-4,5,6-trihydroxyphenyl) methane, bis (2,3,4-trihydroxybenzoyl) benzene, bis (2,4,6-trihydroxybenzoyl) ) Bis (polyhydroxybenzoyl) alkanes such as benzene or bis (polyhydroxybenzoyl) aryls, ethylene glycol-di (3,5-dihydroxybenzoate), ethylene glycol-di (3,4,5-trihydroxybenzoate), etc. Alkylene-di (polyhydroxybenzoates), 2,3,4-biphenyltriol, 3,4,5-biphenyltriol, 3,5,
3 ', 5'-biphenyl tetrol, 2,4,2',
4'-biphenyl tetrol, 2,4,6,3 ', 5'
-Biphenylpentol, 2,4,6,2 ', 4',
6'-biphenylhexol, 2,3,4,2 ',
Polyhydroxybiphenyls such as 3 ′, 4′-biphenylhexol, bis (polyhydroxy) sulfides such as 4,4′-thiobis (1,3-dihydroxy) benzene, 2,2 ′, 4,4 Bis (polyhydroxyphenyl) ethers such as'-tetrahydroxydiphenyl ether, bis (polyhydroxyphenyl) sulfoxides such as 2,2 ', 4,4'-tetrahydroxydiphenyl sulfoxide, 2, Bis (polyhydroxyphenyl) sulfones such as 2 ′, 4,4′-diphenyl sulfone, 4,4 ′, 3 ″, 4 ″ -tetrahydroxy-3,
5,3 ′, 5′-tetramethyltriphenylmethane,
4,4 ', 2 ", 3", 4 "-pentahydroxy-3,
5,3 ′, 5′-tetramethyltriphenylmethane,
2,3,4,2 ', 3', 4'-hexahydroxy-
5,5'-diacetyltriphenylmethane, 2,3
4,2 ′, 3 ′, 4 ′, 3 ″, 4 ″ -octahydroxy-5,5′-diacetyltriphenylmethane, 2,4,
6,2 ', 4', 6'-hexahydroxy-5,5'-
Polyhydroxytriphenylmethanes such as dipropionyltriphenylmethane, 3,3,3 ′, 3′-tetramethyl-1,1′-spirobi-indane-5,6,5 ′,
6'-tetrol, 3,3,3 ', 3'-tetramethyl-1,1'-spirobi-indane-5,6,7,5',
6 ', 7'-hexool, 3,3,3', 3'-tetramethyl-1,1'-spirobiindane-4,5,6
4 ', 5', 6'-hexool, 3,3,3 ', 3'
-Tetramethyl-1,1'-spirobi-indane-4,
Polyhydroxyspirobi-indanes such as 5,6,5 ′, 6 ′, 7′-hexool, 3,3-bis (3,4-)
Dihydroxyphenyl) phthalide, 3,3-bis (2,2
3,4-trihydroxyphenyl) phthalide, 3 ′,
Polyhydroxyphthalides such as 4 ′, 5 ′, 6′-tetrahydroxyspiro [phthalide-3,9′-xanthene], 2- (3,4-dihydroxyphenyl) -3,5,
7-trihydroxybenzopyran, 2- (3,4,5-
Trihydroxyphenyl) -3,5,7-trihydroxybenzopyran, 2- (3,4-dihydroxyphenyl) -3- (3,4,5-trihydroxybenzoyloxy) -5,7-dihydroxybenzo Piran, 2-
(3,4,5-Trihydroxyphenyl) -3- (3,3
4,5-Trihydroxybenzoyloxy) -5,7-
Polyhydroxybenzopyrans such as dihydroxybenzopyran or flavono dyes such as morin, quercetin and rutin can be used. The naphthoquinone diazide ester photosensitive materials of these polyhydroxy compounds are used alone or in combination of two or more kinds. The ratio of the photosensitive material to the alkali-soluble resin used is 5 to 100 parts by weight, preferably 10 to 100 parts by weight of the resin.
It is 50 parts by weight. If the use ratio is less than 5 parts by weight, the residual film rate is remarkably reduced, while if it exceeds 100 parts by weight, the sensitivity and the solubility in a solvent are deteriorated.

The composition of the present invention may further contain a polyhydroxy compound in order to accelerate the dissolution in the developing solution. Preferred polyhydroxy compounds are phenols, resorcin, phloroglucin, acetone-pyrogallol condensation resin, phloroglucide, 2,4,2 ′,
4'-biphenyl tetrol, 4,4'-thiobis (1,3-dihydroxy) benzene, 2,2 ', 4
4'-tetrahydroxydiphenyl ether, 2,
2 ', 4,4'-tetrahydroxydiphenyl sulfoxide, 2,2', 4,4'-diphenyl sulfone and the like can be mentioned. The compounding amount of the polyhydroxy compound is usually 1 with respect to 100 parts by weight of the quinonediazide compound.
The amount is 00 parts by weight or less, preferably 5 to 50 parts by weight.

As the solvent for dissolving the photosensitive material and the alkali-soluble novolak resin of the present invention, ketones such as methyl ethyl ketone and cyclohexanone, 4-ethoxy-2
-Ketoethers such as butanone, 4-methoxy-4-methyl-2-pentanno, alcohol ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether, ethers such as dioxane and ethylene glycol dimethyl ether, methyl cellosolve acetate, ethyl Cellosolve esters such as cellosolve acetate, fatty acid esters such as butyl acetate, methyl lactate and ethyl lactate, halogenated hydrocarbons such as 1,1,2-trichloroethylene, dimethylacetamide,
Examples thereof include highly polar solvents such as N-methylpyrrolidone, dimethylformamide and dimethylsulfoxide. These solvents may be used alone or as a mixture of plural solvents.

A surfactant may be added to the positive photoresist composition of the present invention in order to further improve coating properties such as striation. Examples of the surfactant include polyoxyethylene lauryl ether,
Polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene oleyl ether and other polyoxyethylene alkyl ethers, polyoxyethylene octylphenol ether, polyoxyethylene nonylphenol ether and other polyoxyethylene alkyl allyl ethers, poly Oxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate,
Sorbitan fatty acid esters such as sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, poly Nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters such as oxyethylene sorbitan trioleate and polyoxyethylene sorbitan tristearate, EP TF
301, EF303, EF352 (Shin-Akita Kasei Co., Ltd.)
Made), Megafask F171, F173 (Dainippon Ink)
Manufactured by Sumitomo 3M Ltd., Asahi Guard AG710, Surflon S-382, SC101, SC102, SC103, manufactured by Sumitomo 3M Limited.
SC104, SC105, SC106 (Asahi Glass Co., Ltd.)
Fluorine-based surfactants such as organosiloxane polymer KP341 (produced by Shin-Etsu Chemical Co., Ltd.), acrylic acid-based or methacrylic acid-based (co) polymerization polyflow No. 75,
No. 95 (manufactured by Kyoeisha Oil and Fat Chemical Co., Ltd.) and the like. The blending amount of these surfactants is usually 2 parts by weight or less, preferably 1 part by weight or less, per 100 parts by weight of the alkali-soluble resin and the quinonediazide compound in the composition of the present invention. These surfactants may be added alone or in some combinations.

If desired, the positive photoresist composition of the present invention may contain a plasticizer, an adhesion aid, a surfactant and the like. Specific examples thereof include methyl violet, crystal violet, dye such as malachite green, stearic acid, acetal resin, phenoxy resin, plasticizer such as alkyd resin, adhesion promoter such as hexamethyldisilazane and chloromethylsilane, And nonylphenoxypoly (ethyleneoxy) ethanol, octylphenoxypoly (ethyleneoxy) ethanol and the like.

After applying the above-mentioned positive photoresist composition onto a substrate (eg, silicon / silicon dioxide coating) used for the production of precision integrated circuit devices by a suitable coating method such as a spinner or a coater, a predetermined coating is performed. A resist image can be obtained by exposing through a mask of No. 1 and developing. By using the composition of the present invention, a good resist image can be obtained even if a substrate having a high reflectance is used.

As the developer for the positive photoresist composition of the present invention, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, inorganic alkalis such as aqueous ammonia, ethylamine,
Primary amines such as n-propylamine, secondary amines such as diethylamine and di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, tetra Fourth such as methylammonium hydroxide, tetraethylammonium hydroxide
Aqueous solutions of alkalis such as primary ammonium salts, cyclic amines such as pyrrole and piperidine can be used.
Further, an appropriate amount of alcohols and surfactants may be added to the above aqueous solution of alkalis for use. Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited thereto. Unless otherwise specified,% means% by weight.

[0029]

【Example】

Example 1 A novolak resin (m-cresol and p-cresol obtained by condensing p-cresol with formaldehyde using oxalic acid as a catalyst)
-Cresol / p-cresol = 40/60 (molar ratio), Mw = 7200) 100 parts by weight and 2,3,4,4 '
28 parts by weight of 1,2-naphthoquinonediazide-5-sulfonic acid ester of tetrahydroxybenzophenone (average esterification rate: 75%) was dissolved in 320 parts by weight of ethyl cellosolve acetate to prepare a photoresist base. 2.5% by weight of the solid content of the light absorbent (1) of the present invention and rosolic acid were dissolved in this photoresist base and filtered using a 0.2 μm microfilter to prepare a photoresist. did.

This photoresist composition was applied onto a silicon wafer having an aluminum film by using a spinner and dried by a vacuum adsorption type hot plate at 90 ° C. for 60 seconds to obtain a resist film having a thickness of 1.2 μm. .. This film was exposed through a test chat mask using a reduction projection exposure apparatus FPA-1550 manufactured by Canon Inc., then developed with a 2.38% tetramethylammonium hydroxide aqueous solution for 1 minute, washed with water for 30 seconds and dried. .. The resist pattern thus obtained was observed with a scanning electron microscope to evaluate the resist. The results are shown in Table 1.

The sensitivity was defined as the reciprocal of the exposure dose for reproducing a 0.7 μm mask pattern, and was shown as a relative value to the sensitivity of Comparative Example 1. The resolving power represents a limiting resolving power at an exposure amount that reproduces a 0.7 μm mask pattern. The sublimation resistance refers to the absorbance ratio at 436 nm (compared to before prebaking) obtained by applying a resist composition to a glass wafer, baking at 90 ° C. for 30 minutes in a convection oven, and measuring with a spectrophotometer. The anti-halation function was obtained by observing the resist pattern with a scanning electron microscope and examining the state of the side surface of the pattern.

As can be seen from the results in Table 1, the positive photoresist composition of the present invention was excellent in sensitivity, resolution, sublimation resistance, and antihalation effect. Further, in the solution for the positive photoresist composition of the present invention, precipitation of the light absorber was not observed in the resist solution even after standing at 40 ° C. for 30 days.

Examples 2 to 5 To the photoresist base prepared in Example 1, 3.0% of the light absorbent (3) of the specific example of the present invention was added as a solid content.
% By weight, 2.5% by weight of the light absorbent (6), 2.5% by weight of the light absorbent (7), 2.5% by weight of the light absorbent (10), except in the same manner as in Example 1. When a photoresist composition was prepared and evaluated in the same manner as in Example 1,
The same result as in Example 1 was obtained. The results are shown in Table 1.

Comparative Example 1 A photoresist composition was prepared and evaluated in the same manner as in Example 1 except that the light absorbent according to the present invention was not used. The results are shown in Table 1. The line width of the obtained minimum pattern is 0.5.
Although the thickness was 5 μm, the effect of halation was large and the pattern side face was notably jagged.

Comparative Example 2 The photoresist base material prepared in Example 1 was used in combination with a known light absorber oil yellow (4-dimethylaminoazobenzene).
A photoresist composition was prepared and evaluated in the same manner as in Example 1 except that was added in an amount of 3.0% by weight based on the solid content ratio. The results are shown in Table 1. The obtained minimum pattern line width was 0.50 μm and the pattern side surface was not jagged.
However, the sensitivity was remarkably low, and the absorbance ratio was 0.81 and the sublimation resistance was poor.

Comparative Example 3 Example 1 except that the known alkali-soluble absorber 2,4-dihydroxyazobenzene was added to the photoresist base material prepared in Example 1 in an amount of 2.5% by weight based on the solid content. A photoresist composition was prepared and evaluated in the same manner as in. The sensitivity is high and the minimum pattern line width obtained is 0.
At 55 μm, the jaggedness on the side surface of the pattern was not so remarkable. However, when left at 40 ° C. for 30 days, precipitation of a light absorber was observed in the resist solution.

[0037]

[Table 1]

[0038]

According to the composition of the present invention, a photoresist having excellent line width controllability even on a high reflectance substrate and excellent properties such as sensitivity, resolution and sublimation resistance can be obtained. It can be suitably used as a photoresist for use.

Claims (1)

[Claims] 1. A positive photoresist composition comprising an alkali-soluble resin and a compound containing a 1,2-naphthoquinonediazide group, further comprising at least one compound represented by the following general formula (I) as a total solid content. A positive photoresist composition comprising 0.1 to 10% by weight. [Chemical 1] Here, R _{1 to} R ₁₄ may be the same or different and each is a hydrogen atom, a hydroxyl group, a halogen atom, a carboxyl group, a nitro group, an alkyl group, an alkoxy group, a di (alkyl) amino group, or a monovalent organic residue. And at least one of R ₃ and R ₈ represents a hydroxyl group.