JPH0590623A - Transfer material for solar battery - Google Patents

Transfer material for solar battery

Info

Publication number
JPH0590623A
JPH0590623A JP3276911A JP27691191A JPH0590623A JP H0590623 A JPH0590623 A JP H0590623A JP 3276911 A JP3276911 A JP 3276911A JP 27691191 A JP27691191 A JP 27691191A JP H0590623 A JPH0590623 A JP H0590623A
Authority
JP
Japan
Prior art keywords
layer
transfer material
semiconductor ink
solar cell
ink layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3276911A
Other languages
Japanese (ja)
Inventor
Tadatake Taniguchi
忠壮 谷口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissha Printing Co Ltd
Original Assignee
Nissha Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissha Printing Co Ltd filed Critical Nissha Printing Co Ltd
Priority to JP3276911A priority Critical patent/JPH0590623A/en
Publication of JPH0590623A publication Critical patent/JPH0590623A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials

Landscapes

  • Manufacture Or Reproduction Of Printing Formes (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a transfer material for solar battery in which a semiconductor ink layer of uniform thickness can be formed on a glass substrate having a cubic surface such as curved surface. CONSTITUTION:A polyethylene terephthalate film is used as base material film 1 and acrylic resin is provided as peeling layer 2 on the base material film by screen printing method. A semiconductor ink obtained by mixing of CdS/CdTe as II-VI compound semiconductor powder together with solvent in a resin binder composed of acrylic resin is used on the peeling layer so that a semiconductor ink layer 3 is provided by the screen printing method. Further, an acrylic adhesive is provided as bonding layer 4 on the semiconductor ink layer so that a transfer material for solar battery is manufactured.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、曲面などの立体表面を
有するガラス基板上に均一な厚さの半導体インキ層を形
成できる太陽電池用転写材に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transfer material for a solar cell capable of forming a semiconductor ink layer having a uniform thickness on a glass substrate having a three-dimensional surface such as a curved surface.

【0002】[0002]

【従来の技術】太陽電池は、半導体層が一対の電極で挟
み込まれ、太陽からの光エネルギーを電気エネルギーに
変換するものである。
2. Description of the Related Art In a solar cell, a semiconductor layer is sandwiched between a pair of electrodes to convert light energy from the sun into electric energy.

【0003】従来から、II−VI族化合物半導体太陽電池
を製造するには、ガラス基板表面に形成された電極とな
る導電層上に半導体インキを用いスクリーン印刷法にて
均一な厚さの半導体インキ層を直接印刷形成し、その後
半導体インキ層を焼成することにより有機成分を揮散さ
せて半導体層を形成していた。
Conventionally, in order to manufacture a II-VI group compound semiconductor solar cell, a semiconductor ink having a uniform thickness is formed by screen printing using a semiconductor ink on a conductive layer serving as an electrode formed on the surface of a glass substrate. The layer was directly formed by printing, and then the semiconductor ink layer was baked to volatilize the organic components to form the semiconductor layer.

【0004】[0004]

【発明が解決しようとする課題】しかし、スクリーン印
刷などの印刷法では曲面などの立体表面を有するガラス
基板上に半導体インキ層を形成することが難しかった。
However, it has been difficult to form a semiconductor ink layer on a glass substrate having a three-dimensional surface such as a curved surface by a printing method such as screen printing.

【0005】したがって、本発明は、曲面などの立体表
面を有するガラス基板上に均一な厚さの半導体インキ層
を形成できる太陽電池用転写材を提供することを目的と
する。
Therefore, an object of the present invention is to provide a transfer material for a solar cell capable of forming a semiconductor ink layer having a uniform thickness on a glass substrate having a three-dimensional surface such as a curved surface.

【0006】[0006]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明の太陽電池用転写材は、剥離性を有する基
材フィルム上に、II−VI族化合物半導体粉末と樹脂バイ
ンダーとを主成分とする半導体インキ層が少なくとも設
けられているように構成した。
In order to achieve the above object, the transfer material for a solar cell of the present invention comprises a base film having releasability, a II-VI group compound semiconductor powder and a resin binder. At least the semiconductor ink layer as the main component was provided.

【0007】上記の構成において、半導体インキ層の片
面または両面に導電層が設けられてもよい。
In the above structure, a conductive layer may be provided on one side or both sides of the semiconductor ink layer.

【0008】上記の構成において、導電層が櫛歯状パタ
ーンを有していてもよい。
In the above structure, the conductive layer may have a comb-shaped pattern.

【0009】また、上記の構成において、導電層が透明
であってもよい。
Further, in the above structure, the conductive layer may be transparent.

【0010】また、上記の構成において、被転写体に面
する層として接着層が設けられてもよい。
Further, in the above structure, an adhesive layer may be provided as a layer facing the transferred body.

【0011】以下、図面を参照しながら本発明について
さらに詳しく説明する。図1は本発明の太陽電池用転写
材の一実施例を示す断面図、図2〜5は本発明の太陽電
池用転写材の他の実施例を示す断面図、図6および図7
は本発明の太陽電池用転写材を用いた半導体インキ層の
形成方法を示す断面図である。1は基材フィルム、2は
剥離層、3は半導体インキ層、4は接着層、5は導電
層、6は電極、7はガラス基板、8は粘着剤をそれぞれ
示す。
The present invention will be described in more detail below with reference to the drawings. 1 is a cross-sectional view showing an embodiment of the transfer material for a solar cell of the present invention, FIGS. 2 to 5 are cross-sectional views showing another embodiment of the transfer material for a solar cell of the present invention, FIGS. 6 and 7.
FIG. 4 is a cross-sectional view showing a method for forming a semiconductor ink layer using the transfer material for a solar cell of the present invention. Reference numeral 1 is a base film, 2 is a release layer, 3 is a semiconductor ink layer, 4 is an adhesive layer, 5 is a conductive layer, 6 is an electrode, 7 is a glass substrate, and 8 is an adhesive.

【0012】基材フィルム1としては、ポリエチレンテ
レフタレート・ポリプロピレン・ポリエチレン・ナイロ
ン・セロハンなどのプラスチックフィルム、あるいはこ
れらと紙との複合フィルムが用いられる。基材フィルム
1に剥離性を付与するために、基材フィルム1上にシリ
コンコートやワックスコートを施したり、基材フィルム
1上に剥離層2を設けるとよい。剥離層2としては、ア
クリル系樹脂などの熱可塑性樹脂や天然ゴム・合成ゴム
など揮散性のよいものを用い、グラビア印刷法・スクリ
ーン印刷法などの通常の印刷法、ロールコート法などの
コート法などで形成される。なお、基材フィルム1が十
分剥離性を有する場合は、前記の離型処理は必要ない。
As the base film 1, a plastic film such as polyethylene terephthalate, polypropylene, polyethylene, nylon, cellophane, or a composite film of these and paper is used. In order to impart releasability to the base film 1, it is preferable to coat the base film 1 with a silicon coat or a wax coat, or to provide the release layer 2 on the base film 1. The release layer 2 is made of thermoplastic resin such as acrylic resin, natural rubber, synthetic rubber or the like, which has good volatility, and is used for ordinary printing methods such as gravure printing and screen printing, and coating methods such as roll coating. Is formed. If the base film 1 has sufficient releasability, the above-mentioned mold release treatment is not necessary.

【0013】半導体インキ層3は、II−VI族化合物半導
体粉末を溶剤とともに樹脂バインダーに加えてよく混合
してインキ化し、グラビア印刷・スクリーン印刷・オフ
セット印刷・凸版印刷などの印刷法、ロールコート法な
どのコート法により形成される。II−VI族化合物半導体
粉末としては、CdS/CdTe、(ZnCd)S/Cu2Sなどがある。
樹脂バインダーとしては、アクリル系樹脂・炭化水素系
樹脂・アセタール系樹脂・ビニル系樹脂・ブチラール系
樹脂・スチレン系樹脂・ポリエステル系樹脂・ウレタン
系樹脂・硝化綿などが用いられる。
The semiconductor ink layer 3 is formed by adding II-VI group compound semiconductor powder together with a solvent to a resin binder and mixing them well to form an ink. It is formed by a coating method such as. Examples of II-VI group compound semiconductor powders include CdS / CdTe and (ZnCd) S / Cu 2 S.
As the resin binder, acrylic resin, hydrocarbon resin, acetal resin, vinyl resin, butyral resin, styrene resin, polyester resin, urethane resin, nitrified cotton, etc. are used.

【0014】また、電極6となる導電層5が半導体イン
キ層3と同時にガラス基板7上に設けられるように、半
導体インキ層3の片面または両面に導電層5を形成して
もよい。導電層5は、櫛歯状パターンで形成したりある
いは透明に形成することにより、半導体層の太陽光を受
けることできる面積を広くすることができる。導電層5
としては、金属または導電性金属酸化物を真空蒸着法や
スパッタリング法、イオンプレーティング法などで形成
したものが用いられる。また、金属または導電性金属酸
化物を溶剤とともに樹脂バインダーに加えてよく混合し
てインキ化し、グラビア印刷・スクリーン印刷・オフセ
ット印刷・凸版印刷などの印刷法により形成したものや
金属箔を用いを用いてもよい。また、透明な導電層5を
得る場合には、酸化スズ・酸化インジウム・酸化スズ-
酸化インジウムなどを用いる。
Further, the conductive layer 5 may be formed on one side or both sides of the semiconductor ink layer 3 so that the conductive layer 5 to be the electrode 6 is provided on the glass substrate 7 at the same time as the semiconductor ink layer 3. By forming the conductive layer 5 in a comb-shaped pattern or by forming it transparent, the area of the semiconductor layer that can receive sunlight can be increased. Conductive layer 5
As the material, a metal or conductive metal oxide formed by a vacuum deposition method, a sputtering method, an ion plating method, or the like is used. In addition, metal or conductive metal oxide is added to a resin binder together with a solvent and mixed well to form an ink, which is formed by a printing method such as gravure printing, screen printing, offset printing, relief printing, or a metal foil is used. May be. Further, in the case of obtaining the transparent conductive layer 5, tin oxide / indium oxide / tin oxide-
Indium oxide or the like is used.

【0015】また、被転写体に面する層として接着層4
を設けてもよい。接着層4としては、揮散性のよいもの
が用いられ、粘着剤8あるいは感熱接着性・感圧接着性
の樹脂を用いる。粘着剤8は、ゴム系粘着剤・アクリル
系粘着剤・ビニルアルキル系粘着剤などを用いるとよ
い。感熱接着・感圧接着性の樹脂には、アクリル樹脂・
ポリアミド樹脂・塩素化ポリプロピレン系樹脂・塩化ビ
ニル酢酸ビニル系樹脂などを用いるとよい。また、接着
層4は、グラビア印刷・スクリーン印刷・オフセット印
刷・凸版印刷などの印刷法、ロールコート法などのコー
ト法、スプレー法などにより形成する。
Further, the adhesive layer 4 is provided as a layer facing the transferred body.
May be provided. As the adhesive layer 4, a material having a good volatility is used, and a pressure sensitive adhesive 8 or a heat-sensitive adhesive / pressure-sensitive adhesive resin is used. As the adhesive 8, it is preferable to use a rubber-based adhesive, an acrylic-based adhesive, a vinylalkyl-based adhesive, or the like. Acrylic resin for heat-sensitive and pressure-sensitive adhesive
Polyamide resin, chlorinated polypropylene resin, vinyl chloride vinyl acetate resin, etc. may be used. The adhesive layer 4 is formed by a printing method such as gravure printing, screen printing, offset printing, letterpress printing, a coating method such as a roll coating method, or a spraying method.

【0016】[0016]

【実施例】実施例1 ポリエチレンテレフタレートフィルムを基材フィルム1
とし、その上にアクリル樹脂を剥離層2としてスクリー
ン印刷法にて設け、その上にCdS/CdTeをII−VI族化合
物半導体粉末としてアクリル樹脂からなる樹脂バインダ
ー中に溶剤とともに混合して得られた半導体インキを用
い、スクリーン印刷法にて半導体インキ層3を設け、さ
らにその上にアクリル系粘着剤を接着層4として設けて
太陽電池用転写材を作製した。
EXAMPLES Example 1 A polyethylene terephthalate film was used as a base film 1
Acrylic resin was provided as a release layer 2 on the screen by a screen printing method, and CdS / CdTe was obtained as a II-VI group compound semiconductor powder mixed with a solvent in a resin binder made of an acrylic resin. A semiconductor ink layer 3 was formed by using a semiconductor ink by a screen printing method, and an acrylic pressure-sensitive adhesive was further provided thereon as an adhesive layer 4 to prepare a transfer material for a solar cell.

【0017】このようにして得られた太陽電池用転写材
は、表面に電極6が設けられた立体形状を有するガラス
基板7の電極6側に立体形状に沿うように重ねあわせて
接着させ、次に基材フィルム1を剥離して半導体インキ
層3を転写することにより、立体形状を有するガラス基
板7上に均一な厚さの半導体インキ層3を形成すること
ができた。
The solar cell transfer material thus obtained is laminated and adhered to the electrode 6 side of the glass substrate 7 having a three-dimensional shape with the electrode 6 provided on the surface so as to follow the three-dimensional shape. It was possible to form the semiconductor ink layer 3 having a uniform thickness on the glass substrate 7 having a three-dimensional shape by peeling the substrate film 1 and transferring the semiconductor ink layer 3.

【0018】実施例2 ポリプロピレンを基材フィルム1とし、その上にアクリ
ル樹脂を剥離層2としてロールコート法にて設け、その
上にCdS/CdTeをII−VI族化合物半導体粉末としてアク
リル樹脂からなる樹脂バインダー中に溶剤とともに混合
して得られた半導体インキを用い、スクリーン印刷法に
て半導体インキ層3を設け、さらにその上に酸化スズ-
酸化インジウムを真空蒸着させて透明な導電層5を設
け、その上にアクリル樹脂を接着層4として設けて太陽
電池用転写材を作製した。
Example 2 Polypropylene was used as a base film 1, and an acrylic resin was provided as a release layer 2 on the base film by a roll coating method, and CdS / CdTe was formed on the acrylic resin as a II-VI compound semiconductor powder. A semiconductor ink layer 3 is formed by screen printing using a semiconductor ink obtained by mixing a resin binder with a solvent, and tin oxide-
Indium oxide was vacuum-deposited to provide a transparent conductive layer 5, and an acrylic resin was provided as an adhesive layer 4 on the transparent conductive layer 5 to prepare a transfer material for a solar cell.

【0019】このようにして得られた太陽電池用転写材
は、立体形状を有するガラス基板7に沿うように重ねあ
わせて熱圧を加えて接着させ、次に基材フィルム1を剥
離して半導体インキ層3を転写することにより、立体形
状を有するガラス基板7上に均一な厚さの半導体インキ
層3を形成することができた。
The transfer material for a solar cell thus obtained is superposed along the glass substrate 7 having a three-dimensional shape, and heat and pressure are applied to adhere the same, and then the base film 1 is peeled off to form a semiconductor. By transferring the ink layer 3, it was possible to form the semiconductor ink layer 3 having a uniform thickness on the glass substrate 7 having a three-dimensional shape.

【0020】実施例3 ポリエチレンテレフタレートフィルムを基材フィルム1
とし、その上にアクリル樹脂を剥離層2としてロールコ
ート法にて設け、その上にアルミニウムを真空蒸着させ
て導電層5を設け、さらにCdS/CdTeをII−VI族化合物
半導体粉末としてアクリル樹脂からなる樹脂バインダー
中に溶剤とともに混合して得られた半導体インキを用い
てスクリーン印刷法にて半導体インキ層3を設け、その
上に酸化スズを真空蒸着させて透明な導電層5を設けて
太陽電池用貼付材を作製した。
Example 3 Base film 1 made of polyethylene terephthalate film
Then, an acrylic resin was provided thereon as a release layer 2 by a roll coating method, aluminum was vacuum-deposited thereon to provide a conductive layer 5, and CdS / CdTe was used as II-VI group compound semiconductor powder from the acrylic resin A solar cell in which a semiconductor ink layer 3 is provided by a screen printing method using a semiconductor ink obtained by mixing the resin binder with a solvent, and a transparent conductive layer 5 is provided by vacuum vapor deposition of tin oxide on the semiconductor ink layer 3. A patch for use was prepared.

【0021】このようにして得られた太陽電池用貼付材
は、立体形状を有するガラス基板7上にアクリル系粘着
剤をスプレー法にて塗布した後、粘着剤8塗布表面上に
立体形状に沿うように重ねあわせて接着させ、次に基材
フィルム1を剥離して半導体インキ層3を転写すること
により、立体形状を有するガラス基板7上に均一な厚さ
の半導体インキ層3を形成することができた。
In the solar cell patch obtained in this manner, an acrylic pressure-sensitive adhesive is applied onto a glass substrate 7 having a three-dimensional shape by a spray method, and then the surface of the pressure-sensitive adhesive 8 is conformed to the three-dimensional shape. To form a semiconductor ink layer 3 having a uniform thickness on the glass substrate 7 having a three-dimensional shape by transferring the semiconductor ink layer 3 by peeling off the base material film 1 and then adhering them to each other. I was able to.

【0022】[0022]

【発明の効果】本発明の太陽電池用転写材は、剥離性を
有する基材フィルム上に、II−VI族化合物半導体粉末と
樹脂バインダーとを主成分とする半導体インキ層が少な
くとも設けられているように構成した。
INDUSTRIAL APPLICABILITY The transfer material for a solar cell of the present invention has at least a semiconductor ink layer containing a II-VI group compound semiconductor powder and a resin binder as main components on a base film having releasability. As configured.

【0023】したがって、半導体インキ層を有する太陽
電池用転写材を立体表面に沿わせて接着させることによ
り、曲面などの立体面を有するガラス基板に均一な厚さ
の半導体インキ層を形成することができる。
Therefore, by adhering the transfer material for a solar cell having a semiconductor ink layer along a three-dimensional surface, a semiconductor ink layer having a uniform thickness can be formed on a glass substrate having a three-dimensional surface such as a curved surface. it can.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の太陽電池用転写材の一実施例を示す断
面図である。
FIG. 1 is a cross-sectional view showing an example of a transfer material for a solar cell of the present invention.

【図2】本発明の太陽電池用転写材の他の実施例を示す
断面図である。
FIG. 2 is a cross-sectional view showing another embodiment of the transfer material for solar cells of the present invention.

【図3】本発明の太陽電池用転写材の他の実施例を示す
断面図である。
FIG. 3 is a cross-sectional view showing another embodiment of the transfer material for solar cells of the present invention.

【図4】本発明の太陽電池用転写材の他の実施例を示す
断面図である。
FIG. 4 is a cross-sectional view showing another embodiment of the transfer material for solar cells of the present invention.

【図5】本発明の太陽電池用転写材の他の実施例を示す
断面図である。
FIG. 5 is a cross-sectional view showing another embodiment of the solar cell transfer material of the present invention.

【図6】本発明の太陽電池用転写材を用いた半導体イン
キ層の形成方法を示す断面図である。
FIG. 6 is a cross-sectional view showing a method for forming a semiconductor ink layer using the transfer material for a solar cell of the present invention.

【図7】本発明の太陽電池用転写材を用いた半導体イン
キ層の形成方法を示す断面図である。
FIG. 7 is a cross-sectional view showing a method for forming a semiconductor ink layer using the transfer material for a solar cell of the present invention.

【符号の説明】[Explanation of symbols]

1 基材フィルム 2 剥離層 3 半導体インキ層 4 接着層 5 導電層 6 電極 7 ガラス基板 8 粘着剤 1 Base Material Film 2 Release Layer 3 Semiconductor Ink Layer 4 Adhesive Layer 5 Conductive Layer 6 Electrode 7 Glass Substrate 8 Adhesive

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 剥離性を有する基材フィルム上に、II−
VI族化合物粉末と樹脂バインダーとを主成分とする半導
体インキ層が少なくとも設けられていることを特徴とす
る太陽電池用転写材。
1. A base film having releasability, II-
A transfer material for a solar cell, which is provided with at least a semiconductor ink layer containing a Group VI compound powder and a resin binder as main components.
【請求項2】 半導体インキ層の片面または両面に導電
層が設けられている請求項1記載の太陽電池用転写材。
2. The transfer material for a solar cell according to claim 1, wherein a conductive layer is provided on one side or both sides of the semiconductor ink layer.
【請求項3】 導電層が櫛歯状パターンを有する請求項
2記載の太陽電池用転写材。
3. The transfer material for a solar cell according to claim 2, wherein the conductive layer has a comb-shaped pattern.
【請求項4】 導電層が透明である請求項2記載の太陽
電池用転写材。
4. The transfer material for a solar cell according to claim 2, wherein the conductive layer is transparent.
【請求項5】 被転写体に面する層として接着層が設け
られた請求項1〜4のいずれかに記載の太陽電池用転写
材。
5. The transfer material for a solar cell according to claim 1, wherein an adhesive layer is provided as a layer facing the transferred body.
JP3276911A 1991-09-28 1991-09-28 Transfer material for solar battery Pending JPH0590623A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3276911A JPH0590623A (en) 1991-09-28 1991-09-28 Transfer material for solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3276911A JPH0590623A (en) 1991-09-28 1991-09-28 Transfer material for solar battery

Publications (1)

Publication Number Publication Date
JPH0590623A true JPH0590623A (en) 1993-04-09

Family

ID=17576109

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH0590623A (en)

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JP2004335737A (en) * 2003-05-07 2004-11-25 Dainippon Printing Co Ltd Method of manufacturing organic thin film solar cell, and transfer sheet
JP2005032917A (en) * 2003-07-10 2005-02-03 Dainippon Printing Co Ltd Method for manufacturing organic thin film solar cell and transfer sheet
US6953735B2 (en) * 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
JP2006313693A (en) * 2005-05-09 2006-11-16 Dainippon Printing Co Ltd Manufacturing method of intermediate transfer medium, manufacturing method of oxide semiconductor electrode, and manufacturing method of dye-sensitized solar cell
JP2010219205A (en) * 2009-03-16 2010-09-30 Furukawa Electric Co Ltd:The Solar cell unit, and method of manufacturing the same
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US7446339B2 (en) 2001-12-28 2008-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device having a curved surface
US9536901B2 (en) 2001-12-28 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by bonding a layer to a support with curvature
US6953735B2 (en) * 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
US7060591B2 (en) 2001-12-28 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
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JP2006313693A (en) * 2005-05-09 2006-11-16 Dainippon Printing Co Ltd Manufacturing method of intermediate transfer medium, manufacturing method of oxide semiconductor electrode, and manufacturing method of dye-sensitized solar cell
JP2010219205A (en) * 2009-03-16 2010-09-30 Furukawa Electric Co Ltd:The Solar cell unit, and method of manufacturing the same
JP2011151314A (en) * 2010-01-25 2011-08-04 Nissha Printing Co Ltd Organic thin-film solar cell and method of manufacturing imprint type base material (1)
JP2011151315A (en) * 2010-01-25 2011-08-04 Nissha Printing Co Ltd Organic thin-film solar cell and method of manufacturing imprint type base material (2)
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