JPH0572145A - Foreign matter inspecting device - Google Patents

Foreign matter inspecting device

Info

Publication number
JPH0572145A
JPH0572145A JP21490591A JP21490591A JPH0572145A JP H0572145 A JPH0572145 A JP H0572145A JP 21490591 A JP21490591 A JP 21490591A JP 21490591 A JP21490591 A JP 21490591A JP H0572145 A JPH0572145 A JP H0572145A
Authority
JP
Japan
Prior art keywords
light
sample
foreign matter
intensity
measured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21490591A
Other languages
Japanese (ja)
Inventor
Junichi Naganami
純一 長南
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP21490591A priority Critical patent/JPH0572145A/en
Publication of JPH0572145A publication Critical patent/JPH0572145A/en
Pending legal-status Critical Current

Links

Landscapes

  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To carry out measurement with stable detection sensitivity by correcting light intensity in a shorter time than ever. CONSTITUTION:A standard sample 13 for generating the standard scattered light, light detector 10 for detecting the standard light, and a measured sample 7 are arranged on a stage 8 so as to be set on a same plane. A memory part 12 for memorizing the light intensity value obtained from the standard sample 13 and the light detector 10, and a control part 11 which compares the intensity of the light used for measurement and the intensity of the scattered light supplied from the measured sample with each standard value and corrects the sensitivity of a photoelectric conversion element 2 which receives the scattered light supplied from the measured sample 13 are provided, and the light detecting sensitivity is monitored and corrected.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体製造工程におけ
る半導体ウェーハ,リソグラフィ用のレチクル及びマス
クに付着する異物の有無を検査する異物検査装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a foreign matter inspection apparatus for inspecting the presence or absence of foreign matter adhering to a semiconductor wafer, a reticle for lithography and a mask in a semiconductor manufacturing process.

【0002】[0002]

【従来の技術】図2は従来の一例を示す異物検査装置の
ブロック図である。この異物検査装置は、図2に示すよ
うに、ステージ8に載置された被測定試料7の表面に光
を走査する発光部3と、表面より反射する散乱光を捕捉
して光を電流に変換する光電変換素子2と、この光電変
換素子2の出力電流を電圧としてデジタル値に変換する
A/D変換器5と、このA/D変換器5の出力によって
付着する異物の大きさを判定し、その大きさに相当する
信号を出力するサイズ変換回路1と、このサイズ変換回
路1の出力で異物の大きさを表示する表示部6とを有し
ていた。
2. Description of the Related Art FIG. 2 is a block diagram of a conventional foreign matter inspection apparatus. As shown in FIG. 2, this foreign matter inspection apparatus captures the light emitting section 3 that scans the surface of the sample 7 to be measured placed on the stage 8 with light, and the scattered light reflected from the surface to convert the light into an electric current. The photoelectric conversion element 2 for conversion, the A / D converter 5 for converting the output current of the photoelectric conversion element 2 into a digital value as a voltage, and the output of the A / D converter 5 determine the size of foreign matter adhered. However, the size conversion circuit 1 that outputs a signal corresponding to the size and the display unit 6 that displays the size of the foreign matter by the output of the size conversion circuit 1 are included.

【0003】図3は、標準粒子を付着させた基準試料を
示す図、図4は捕捉される散乱光による光起電圧の波形
を示す図である。上述した異物検査装置では、実際に検
査を行う準備として、検査感度の較正を行っていた。こ
れには、図3に示す基準試料にレーザ光を照射し、標準
粒子9より反射する散乱光を図2に示す波形として発生
させる。そして、この出力値が、図4に示すように、標
準粒子9で得られるべき光起電圧の波光値が図2に示す
感度調整回路4で基準値と一致するように調整してい
た。
FIG. 3 is a view showing a reference sample to which standard particles are attached, and FIG. 4 is a view showing a waveform of a photovoltaic voltage due to scattered light captured. In the above-described foreign matter inspection apparatus, the inspection sensitivity is calibrated in preparation for the actual inspection. For this, the reference sample shown in FIG. 3 is irradiated with laser light, and scattered light reflected from the standard particles 9 is generated as the waveform shown in FIG. Then, as shown in FIG. 4, the output value was adjusted so that the wave light value of the photovoltaic voltage to be obtained by the standard particles 9 would be matched with the reference value by the sensitivity adjusting circuit 4 shown in FIG.

【0004】このように調整した後、被検査物であるウ
ェーハあるいはフォトマスクに光を走査し、光電変換素
子で被検査物の散乱光を捕捉し、光電流に変換し、光起
電圧にしてA/D変換器5によりデジタル化する。そし
てデジタル化した信号の数量に応じてサイズ変換回路1
は被見物に付着する異物の大きさを判定し、表示部6に
異物の異物を表示していた。
After the adjustment as described above, the wafer or photomask as the inspection object is scanned with light, the scattered light of the inspection object is captured by the photoelectric conversion element, converted into photocurrent, and converted into a photovoltaic voltage. It is digitized by the A / D converter 5. And the size conversion circuit 1 according to the number of digitized signals
Judges the size of the foreign matter adhering to the object to be seen and displays the foreign matter on the display unit 6.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、従来の
異物検査装置では、予め標準粒子を付着させた基準試料
を準備し、検出レベルを確認し、光電変換素子への印加
電圧を調整するのに、例えば、4時間以上浪費するとい
った問題があった。また、検出感度はレーザー等の走査
光の出力が変動して、変化してしまうことが多々あり、
一定の性能を長期間安定して維持するためには、定期的
な確認・調整という点検を頻繁に行う必要があった。こ
のことは大きな時間損失にもたらす結果となる。さら
に、点検から次回点検までの間は、検出感度が変動して
いないものと仮定し使用するため、装置が以上であるか
の否かの判定も困難であった。
However, in the conventional foreign matter inspection apparatus, in order to prepare the reference sample to which the standard particles are attached in advance, confirm the detection level, and adjust the voltage applied to the photoelectric conversion element, For example, there was a problem of wasting more than 4 hours. Also, the detection sensitivity often changes due to fluctuations in the output of scanning light from a laser or the like,
In order to maintain constant performance for a long period of time, it was necessary to frequently perform regular checks and adjustments. This results in a large loss of time. Further, since it is assumed that the detection sensitivity does not change from one inspection to the next inspection, it is difficult to determine whether or not the device is above the above.

【0006】本発明の目的は、かかる問題を解消すべ
く、検出感度を監視し、より短時間で変動を補正して常
に安定した検出感度で検出出来る異物検出装置を提供す
ることである。
[0006] An object of the present invention is to provide a foreign matter detecting device which can detect the detection sensitivity, correct the fluctuation in a shorter time, and always detect with the stable detection sensitivity in order to solve such a problem.

【0007】[0007]

【課題を解決するための手段】本発明の異物検査装置
は、被測定試料を載置するステージと、被測定試料面に
光を投射する発光部と、前記被測定試料より反射する散
乱光を捕捉する光電変換素子と、この光電変換素子の出
力値により付着する異物の大きさを判定するサイズ変換
回路とを有する異物検査装置において、前記ステージに
前記測定試料と同一面に配置されるとともに前記発光部
の光を検知する光検知部及び標準粒子が付着される基準
試料と、この光検知部及び基準試料から得られる光強度
の基準値を記憶する記憶部と、前記発光部の光及び前記
被測定試料からの散乱光の強度と前記基準値と比較し、
前記光電変換素子の感度を調整する制御部とを備えてい
る。
A foreign matter inspection apparatus according to the present invention comprises a stage on which a sample to be measured is placed, a light emitting section for projecting light onto the surface of the sample to be measured, and scattered light reflected from the sample to be measured. In a foreign matter inspection device having a photoelectric conversion element to be captured and a size conversion circuit for determining the size of a foreign matter attached by the output value of the photoelectric conversion element, the stage is arranged on the same plane as the measurement sample and A light-detecting section for detecting light of the light-emitting section and a reference sample to which standard particles are attached, a storage section for storing a reference value of light intensity obtained from the light-detecting section and the reference sample, the light-emitting section and the light Comparing the intensity of scattered light from the sample to be measured and the reference value,
And a control unit that adjusts the sensitivity of the photoelectric conversion element.

【0008】[0008]

【実施例】次に本発明について、図面を参照して説明す
る。
The present invention will be described below with reference to the drawings.

【0009】図1は本発明の一実施例を示す異物検査装
置のブロック図である。この異物検査装置は、図1に示
すように被測定試料7に付着する異物の大きさを較正す
る基準試料13と、発光部3の光を検知する光検知部1
0をステージ8上に被測定試料7と同一面上に配置し、
基準となる光の強度及び基準となる散乱光の強度を記憶
する記憶部12の、発光部3からの光の強度と前記光の
基準強度及び被測定試料7からの散乱光と前記基準の散
乱光強度とを比較して感度調整回路に補正指令する制御
部11とを設けたことである。それ以外は従来例と同じ
である。
FIG. 1 is a block diagram of a foreign matter inspection apparatus showing an embodiment of the present invention. As shown in FIG. 1, this foreign matter inspection apparatus includes a reference sample 13 for calibrating the size of the foreign matter attached to the sample 7 to be measured, and a light detection section 1 for detecting the light from the light emitting section 3.
0 is placed on the stage 8 on the same plane as the sample to be measured 7,
Intensity of light from the light emitting unit 3, reference intensity of the light, scattered light from the measured sample 7, and scattering of the reference in the storage unit 12 that stores the intensity of the reference light and the intensity of the scattered reference light. That is, the control unit 11 that compares the light intensity and gives a correction command to the sensitivity adjustment circuit is provided. Other than that, it is the same as the conventional example.

【0010】次に、この異物検査装置の動作を説明す
る。まず、発光部3より光を光検知器10に照射し、光
検知器10より得られる基準の光強度値を記憶部12に
記憶させる。引続き、同じ光を基準試料13に投射し、
その散乱光を光電変換素子2に入光させ、光電流に変換
された基準散乱光の強度値を記憶部12に記憶する。
Next, the operation of this foreign matter inspection apparatus will be described. First, the light detector 3 is irradiated with light from the light emitting unit 3, and the reference light intensity value obtained from the light detector 10 is stored in the storage unit 12. Then, the same light is projected on the reference sample 13,
The scattered light is made to enter the photoelectric conversion element 2, and the intensity value of the reference scattered light converted into the photocurrent is stored in the storage unit 12.

【0011】このように準備を完了した後に、発光部3
は被測定試料7の表面に光を投射する。被測定試料より
反射する散乱光は光電変換素子2に入光される。次に、
制御部11は、記憶部12から基準光強度値及び散乱光
強度値を抽出し、光電変換素子2からの散乱光の強度と
を比較する。もし、ここで散乱光の強度値と基準光強度
値及び散乱光強度値との差があれば、その差だけを補正
するように感度調整回路4に指令する。感度調整回路は
光電変換素子2に印加する電圧を補正する。
After the preparation is completed in this way, the light emitting unit 3
Projects light onto the surface of the sample 7 to be measured. The scattered light reflected from the sample to be measured enters the photoelectric conversion element 2. next,
The control unit 11 extracts the reference light intensity value and the scattered light intensity value from the storage unit 12 and compares them with the intensity of the scattered light from the photoelectric conversion element 2. If there is a difference between the scattered light intensity value and the reference light intensity value or scattered light intensity value, the sensitivity adjustment circuit 4 is instructed to correct only the difference. The sensitivity adjustment circuit corrects the voltage applied to the photoelectric conversion element 2.

【0012】このように、あらかじめ基準となる光投射
強度及び散乱光強度を記憶する記憶部を設け、測定する
光の強度及び得られる散乱光の強度と基準値と比較し
て、受光部をある光電変換素子の感度を補正するので、
常にサイズ変換回路は安定したデジタル信号を授け、正
確に判定することが出来る。特に基準値を得るための基
準試料及び光検知器を被測定試料を同一面に配置するこ
とによって、より再現性のある測定値が得られるという
利点がある。また、必要に応じて、制御部に異常検出回
路を設け、基準値との差が大きいと判定したときに、異
常を警報しても良い。
As described above, the storage unit for storing the reference light projection intensity and the scattered light intensity in advance is provided, and the light receiving unit is provided by comparing the measured light intensity and the obtained scattered light intensity with the reference value. Since the sensitivity of the photoelectric conversion element is corrected,
The size conversion circuit always gives a stable digital signal and can make an accurate judgment. Particularly, by disposing the reference sample and the photodetector for obtaining the reference value on the same surface of the sample to be measured, there is an advantage that a more reproducible measurement value can be obtained. If necessary, an abnormality detection circuit may be provided in the control unit to warn the abnormality when it is determined that the difference from the reference value is large.

【0013】[0013]

【発明の効果】以上説明したように本発明は、基準散乱
光を発生させる基準試料と、基準光を検知する光検知器
とを被測定資料と同一面上に配置し、この基準試料及び
光検知器から得られる光強度の基準値を記憶する記憶部
と、測定に使用する光の強度及び被測定試料からの散乱
光の強度と前記基準値とを比較し、被測定資料からの散
乱光を入光する光電変換素子の感度を補正する制御部を
設けることによって、より短時間で光強度を補正し、安
定した検出感度で測定出来る異物検査装置が得られると
いう効果がある。
As described above, according to the present invention, the reference sample for generating the reference scattered light and the photodetector for detecting the reference light are arranged on the same surface as the material to be measured. A storage unit that stores the reference value of the light intensity obtained from the detector, compares the intensity of the light used for the measurement and the intensity of the scattered light from the measured sample with the reference value, and the scattered light from the measured material. By providing the control unit that corrects the sensitivity of the photoelectric conversion element that receives light, it is possible to obtain a foreign substance inspection apparatus that can correct the light intensity in a shorter time and perform measurement with stable detection sensitivity.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す異物検査装置のブロッ
ク図である。
FIG. 1 is a block diagram of a foreign matter inspection apparatus showing an embodiment of the present invention.

【図2】従来の一例を示す異物検査装置のブロック図で
ある。
FIG. 2 is a block diagram of a conventional foreign matter inspection device.

【図3】基準試料を示す側面図である。FIG. 3 is a side view showing a reference sample.

【図4】捕捉される散乱光による光起電圧を示す波形図
である。
FIG. 4 is a waveform diagram showing a photovoltaic voltage due to trapped scattered light.

【符号の説明】[Explanation of symbols]

1 サイズ変換回路 2 光電変換素子 3 発光部 4 感度調整回路 5 A/D変換器 6 表示部 7 被測定試料 8 ステージ 9 標準粒子 10 光検知器 11 制御部 12 記憶部 13 基準試料 1 size conversion circuit 2 photoelectric conversion element 3 light emitting section 4 sensitivity adjustment circuit 5 A / D converter 6 display section 7 sample to be measured 8 stage 9 standard particles 10 photodetector 11 control section 12 storage section 13 reference sample

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 被測定試料を載置するステージと、被測
定試料面に光を投射する発光部と、前記被測定試料より
反射する散乱光を捕捉する光電変換素子と、この光電変
換素子の出力値により付着する異物の大きさを判定する
サイズ変換回路とを有する異物検査装置において、前記
ステージに前記測定試料と同一面に配置されるとともに
前記発光部の光を検知する光検知部及び標準粒子が付着
される基準試料と、この光検知部及び基準試料から得ら
れる光強度の基準値を記憶する記憶部と、前記発光部の
光及び前記被測定試料からの散乱光の強度と前記基準値
と比較し、前記光電変換素子の感度を調整する制御部と
を備えることを特徴とする異物検査装置。
1. A stage on which a sample to be measured is placed, a light emitting section which projects light onto the surface of the sample to be measured, a photoelectric conversion element which captures scattered light reflected from the sample to be measured, and a photoelectric conversion element of this photoelectric conversion element. In a foreign matter inspection device having a size conversion circuit that determines the size of a foreign matter that adheres based on an output value, a light detection unit and a standard that are arranged on the same surface as the measurement sample on the stage and that detect the light of the light emitting unit A reference sample to which particles are attached, a storage unit that stores the reference value of the light intensity obtained from the light detection unit and the reference sample, the intensity of the light of the light emitting unit and the scattered light from the measured sample, and the reference. A foreign matter inspection device, comprising: a control unit that adjusts the sensitivity of the photoelectric conversion element in comparison with a value.
JP21490591A 1991-08-27 1991-08-27 Foreign matter inspecting device Pending JPH0572145A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21490591A JPH0572145A (en) 1991-08-27 1991-08-27 Foreign matter inspecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21490591A JPH0572145A (en) 1991-08-27 1991-08-27 Foreign matter inspecting device

Publications (1)

Publication Number Publication Date
JPH0572145A true JPH0572145A (en) 1993-03-23

Family

ID=16663508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21490591A Pending JPH0572145A (en) 1991-08-27 1991-08-27 Foreign matter inspecting device

Country Status (1)

Country Link
JP (1) JPH0572145A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008008805A (en) * 2006-06-30 2008-01-17 Hitachi High-Technologies Corp Optical defect inspection device
JP2008268140A (en) * 2007-04-25 2008-11-06 Hitachi High-Technologies Corp Defect inspection method and device
JP2008298623A (en) * 2007-05-31 2008-12-11 Hitachi High-Technologies Corp Inspection device and method
WO2010098179A1 (en) * 2009-02-27 2010-09-02 株式会社日立ハイテクノロジーズ Surface inspecting apparatus and method for correcting same
JP2012027038A (en) * 2011-10-26 2012-02-09 Hitachi High-Technologies Corp Defect inspection method and defect inspection device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008008805A (en) * 2006-06-30 2008-01-17 Hitachi High-Technologies Corp Optical defect inspection device
JP2008268140A (en) * 2007-04-25 2008-11-06 Hitachi High-Technologies Corp Defect inspection method and device
JP2008298623A (en) * 2007-05-31 2008-12-11 Hitachi High-Technologies Corp Inspection device and method
WO2010098179A1 (en) * 2009-02-27 2010-09-02 株式会社日立ハイテクノロジーズ Surface inspecting apparatus and method for correcting same
JP2010203776A (en) * 2009-02-27 2010-09-16 Hitachi High-Technologies Corp Surface inspecting apparatus and method for correcting same
JP2012027038A (en) * 2011-10-26 2012-02-09 Hitachi High-Technologies Corp Defect inspection method and defect inspection device

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