JPH0547968A - Cooling structure of electronic device - Google Patents
Cooling structure of electronic deviceInfo
- Publication number
- JPH0547968A JPH0547968A JP3207763A JP20776391A JPH0547968A JP H0547968 A JPH0547968 A JP H0547968A JP 3207763 A JP3207763 A JP 3207763A JP 20776391 A JP20776391 A JP 20776391A JP H0547968 A JPH0547968 A JP H0547968A
- Authority
- JP
- Japan
- Prior art keywords
- low
- dielectric constant
- substrate
- heat
- low dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電源回路等の高発熱回
路と一般的な低発熱回路とをセラミック基板に設けた、
電子装置の冷却構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention provides a ceramic substrate with a high heat generating circuit such as a power supply circuit and a general low heat generating circuit.
The present invention relates to a cooling structure for an electronic device.
【０００２】[0002]
【従来の技術】図２は、従来の電子装置の断面図であ
る。図２において、５は、低誘電率・高熱伝導性基板
（例えば窒化アルミニウム）である。この低誘電率・高
熱伝導性基板５の表面は、電源回路或いは高電力回路等
の高発熱回路Ｍの領域と、論理回路，メモリ回路等の低
発熱回路Ｎの領域とに区画されている。2. Description of the Related Art FIG. 2 is a sectional view of a conventional electronic device. In FIG. 2, 5 is a low dielectric constant / high thermal conductivity substrate (eg, aluminum nitride). The surface of the low dielectric constant / high thermal conductivity substrate 5 is partitioned into a region of a high heat generation circuit M such as a power supply circuit or a high power circuit and a region of a low heat generation circuit N such as a logic circuit or a memory circuit.
【０００３】そして、高発熱回路Ｍには、高電圧パワー
ＩＣ等の高発熱部品３が実装され、低発熱回路Ｎには、
論理用ＩＣ，メモリー用ＩＣ等の低発熱部品４が実装さ
れている。The high heat generating circuit M is mounted with a high heat generating component 3 such as a high voltage power IC, and the low heat generating circuit N is
A low heat-generating component 4 such as a logic IC and a memory IC is mounted.
【０００４】１はAlーSi系合金等よりなる、上部が開口
した浅い箱形の金属ケースであり、2 は金属ケース１の
開口を塞ぐ金属カバーである。低誘電率・高熱伝導性基
板５を金属ケース１の底板に載置し、半田或いは銀・エ
ポキシ樹脂等の導電性接着剤を用いて、低誘電率・高熱
伝導性基板５を金属ケース１に密着させている。Reference numeral 1 denotes a shallow box-shaped metal case made of Al-Si alloy or the like having an opening at the top, and 2 denotes a metal cover for closing the opening of the metal case 1. The low dielectric constant / high thermal conductive substrate 5 is placed on the bottom plate of the metal case 1, and the low dielectric constant / high thermal conductive substrate 5 is mounted on the metal case 1 by using a conductive adhesive such as solder or silver / epoxy resin. It is in close contact.
【０００５】そして、金属ケース１の開口に金属カバー
２を気密に固着して、ケース内を気密に封止するととも
に、金属ケース１の側壁を気密に貫通する或いは底板を
気密に貫通する入出力端子９を設けて、高発熱回路Ｍ及
び低発熱回路Ｎと外部とを接続するようにしている。The metal cover 2 is hermetically fixed to the opening of the metal case 1 to hermetically seal the inside of the case, and the side wall of the metal case 1 is hermetically penetrated or the bottom plate is hermetically input / output. The terminal 9 is provided to connect the high heat generation circuit M and the low heat generation circuit N to the outside.
【０００６】この際、信号の高速化のために、アルミナ
のような低誘電率・低熱伝導性基板とすることも考えら
れるが、アルミナは、誘電率が8.5 と小さいが熱伝導率
もまた２０Ｗ／ｍ・Ｋ°と小さい。したがって高発熱回
路Ｍの高発熱部品３の放熱性が極めて悪い。At this time, it is conceivable to use a substrate having a low dielectric constant and low thermal conductivity such as alumina in order to increase the signal speed. Alumina has a small dielectric constant of 8.5, but the thermal conductivity is 20 W. / M · K °, small. Therefore, the heat dissipation of the high heat generating component 3 of the high heat generating circuit M is extremely poor.
【０００７】このために従来は、上述のように低誘電率
・高熱伝導性の基板（例えば窒化アルミニウム）を採用
して、信号の高速化をはかるとともに、高発熱部品３の
発熱を低誘電率・高熱伝導性基板５を介して金属ケース
１に伝達し、金属ケース１の表面から外部に放出させて
いる。For this reason, conventionally, as described above, a substrate having a low dielectric constant and a high thermal conductivity (for example, aluminum nitride) is used to speed up the signal and to generate heat of the high heat-generating component 3 with a low dielectric constant. It is transmitted to the metal case 1 through the high thermal conductive substrate 5 and is emitted from the surface of the metal case 1 to the outside.
【０００８】なお、窒化アルミニウムの誘電率は8.8 で
あり、熱伝導率は（100 〜180)Ｗ／ｍ・Ｋ°である。ま
た、それぞれの高発熱部品の底面に、基板及びケース底
板を貫通する冷却フィンを取付けて、高発熱部品を冷却
することも考えれる。しかしながらこのようなことは、
電子装置の小形化の障害となるので好ましいことではな
い。Aluminum nitride has a dielectric constant of 8.8 and a thermal conductivity of (100 to 180) W / m · K °. It is also conceivable to attach cooling fins penetrating the substrate and the case bottom plate to the bottom surface of each high heat generating component to cool the high heat generating component. However, something like this
It is not preferable because it hinders miniaturization of the electronic device.
【０００９】[0009]
【発明が解決しようとする課題】ところで従来の冷却構
造は、低発熱回路も高発熱回路もともに同一の低誘電率
・高熱伝導性基板に形成されているので、高発熱部品の
熱が低誘電率・高熱伝導性基板の全体に伝達され低発熱
回路の下方まで拡散し、低発熱回路を形成した基板部分
の温度が上昇する。By the way, in the conventional cooling structure, both the low heat generation circuit and the high heat generation circuit are formed on the same low dielectric constant / high heat conductive substrate, so that the heat of the high heat generation component has a low dielectric constant. The high heat conductivity is transmitted to the entire substrate and diffuses to the lower side of the low heat generation circuit, and the temperature of the substrate portion where the low heat generation circuit is formed rises.
【００１０】このために、低発熱回路に実装された低発
熱部品の放熱が、阻害されるという問題点があった。本
発明はこのような点に鑑みて創作されたもので、高発熱
部品，低発熱部品両者の放熱性が良く、且つ信号の高速
化，装置の小形化が促進される電子装置の冷却構造を提
供することを目的としている。Therefore, there is a problem in that the heat radiation of the low heat-generating components mounted in the low heat generating circuit is hindered. The present invention has been made in view of the above circumstances, and provides a cooling structure for an electronic device, which has good heat dissipation properties for both the high-heat-generating component and the low-heat-generating component, and which facilitates speeding up of signals and downsizing of the device. It is intended to be provided.
【００１１】[0011]
【課題を解決するための手段】上記の目的を達成するた
めに本発明は、図１に例示したように、高発熱回路Ｍと
低発熱回路Ｎとが形成されたセラミック基板を、金属カ
バー２付きの金属ケース１に収容した電子装置におい
て、高発熱回路Ｍは低誘電率・高熱伝導性基板５に、低
発熱回路Ｎは低誘電率・低熱伝導性基板６にそれぞれ実
装する。In order to achieve the above object, the present invention uses a ceramic substrate having a high heat generating circuit M and a low heat generating circuit N, as shown in FIG. In the electronic device housed in the attached metal case 1, the high heat generating circuit M is mounted on the low dielectric constant / high thermal conductive substrate 5, and the low heat generating circuit N is mounted on the low dielectric constant / low thermal conductive substrate 6.
【００１２】低誘電率・高熱伝導性基板５は金属ケース
１の底板の高台部11に密着するように固着し、低誘電率
・低熱伝導性基板６は金属ケース１の底板の低台部12に
密着するように固着する。The low dielectric constant / high thermal conductivity substrate 5 is fixed so as to be in close contact with the elevated portion 11 of the bottom plate of the metal case 1, and the low dielectric constant / low thermal conductivity substrate 6 is attached to the low portion 12 of the bottom plate of the metal case 1. Stick it so that it sticks to.
【００１３】一方、金属カバー２は、低誘電率・高熱伝
導性基板５に対向する位置に、底板部の高発熱部品３に
対応するに孔22を有する凹部21を備えたものとし、低誘
電率・高熱伝導性基板５に実装された高発熱部品３が、
凹部21に充填され孔22を経て低誘電率・高熱伝導性基板
５側に流出した高熱伝導性樹脂30により、覆われている
構成とする。On the other hand, the metal cover 2 is provided with a concave portion 21 having a hole 22 corresponding to the high heat-generating component 3 of the bottom plate portion at a position facing the low dielectric constant / high thermal conductivity substrate 5, and has a low dielectric constant. The high heat-generating component 3 mounted on the high heat conductivity substrate 5
The concave portion 21 is covered with the high thermal conductive resin 30 which is filled in the concave portion 21 and flows out to the side of the low dielectric constant and high thermal conductive substrate 5 through the hole 22.
【００１４】[0014]
【作用】本発明によれば、高発熱部品３は低誘電率・高
熱伝導性基板に実装され、低発熱部品は低誘電率・低熱
伝導性基板に実装されている。即ち何れのセラミック基
板も低誘電率であるので、低発熱回路及び高発熱回路の
信号の高速化が促進される。According to the present invention, the high heat generating component 3 is mounted on the low dielectric constant / high thermal conductive substrate, and the low heat generating component is mounted on the low dielectric constant / low thermal conductive substrate. That is, since any ceramic substrate has a low dielectric constant, speeding up of signals in the low heat generation circuit and the high heat generation circuit is promoted.
【００１５】また、高発熱部品は高熱伝導性のセラミッ
ク基板に実装されており、その低誘電率・高熱伝導性基
板は、金属ケースの底板の高台部に密接に固着されてい
るので、高発熱部品の熱は低誘電率・高熱伝導性基板を
経て厚い底板部分に効率良く伝達され、低誘電率・低熱
伝導性基板に拡散することが殆どない。Further, the high heat generating component is mounted on a ceramic substrate having high heat conductivity, and the low dielectric constant and high heat conductive substrate is closely adhered to the high part of the bottom plate of the metal case, so that high heat generation is achieved. The heat of the component is efficiently transferred to the thick bottom plate portion via the low dielectric constant / high thermal conductive substrate, and hardly diffuses to the low dielectric constant / low thermal conductive substrate.
【００１６】よって低発熱部品の冷却の障害にならな
い。一方、高発熱部品３の熱は、高熱伝導性樹脂を介し
て金属カバーに伝達され、金属カバーから外部に放出さ
れる。即ち高発熱部品３の熱が、金属ケースの底板及び
金属カバーに効率良く伝達されるのでその冷却性が著し
く向上する。Therefore, it does not hinder the cooling of the low heat-generating component. On the other hand, the heat of the high heat generating component 3 is transferred to the metal cover via the high heat conductive resin and is radiated to the outside from the metal cover. That is, the heat of the high heat generating component 3 is efficiently transferred to the bottom plate of the metal case and the metal cover, so that the cooling property thereof is significantly improved.
【００１７】一方、本発明は、金属ケース内に放熱フィ
ン等がないので金属ケースが浅い。即ち、電子装置の小
形化の障害とならない。On the other hand, in the present invention, the metal case is shallow because there is no radiation fin or the like in the metal case. That is, it does not hinder the downsizing of electronic devices.
【００１８】[0018]
【実施例】以下図１を参照しながら、本発明を具体的に
説明する。なお、全図を通じて同一符号は同一対象物を
示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to FIG. The same reference numerals denote the same objects throughout the drawings.
【００１９】図１は本発明の実施例の図で、(A) は断面
図、(B) は要所の断面図である。図１において、５は、
例えば窒化アルミニウムのような低誘電率・高熱伝導性
基板であって、誘電率が8.8 と小さくであり、熱伝導率
は（100 〜180)Ｗ／ｍ・Ｋ°と大きい。FIG. 1 is a diagram of an embodiment of the present invention, (A) is a sectional view, and (B) is a sectional view of a main part. In FIG. 1, 5 is
For example, it is a low dielectric constant / high thermal conductivity substrate such as aluminum nitride, has a low dielectric constant of 8.8 and a high thermal conductivity of (100 to 180) W / mK °.
【００２０】低誘電率・高熱伝導性基板５の上面には、
高発熱部品３を含む高発熱回路Ｍが形成されている。６
は、例えばアルミナのような低誘電率・低熱伝導性基板
であって、誘電率は8.5 と小さく、熱伝導率はもまた２
０Ｗ／ｍ・Ｋ°と小さい。On the upper surface of the substrate 5 having a low dielectric constant and high thermal conductivity,
A high heat generation circuit M including the high heat generation component 3 is formed. 6
Is a low dielectric constant / low thermal conductivity substrate such as alumina, which has a low dielectric constant of 8.5 and a thermal conductivity of 2
It is as small as 0 W / m · K °.
【００２１】低誘電率・低熱伝導性基板６の上面には、
低発熱部品４を含む低発熱回路Ｎが形成されている。Al
ーSi系合金等よりなる、上部が開口した浅い箱形の金
属ケース１の底板には、低誘電率・高熱伝導性基板５の
平面視形状に等しい角形の高台部11が設けられ、高台部
11の周囲には低台部12が形成されている。On the upper surface of the low dielectric constant / low heat conductive substrate 6,
A low heat generation circuit N including the low heat generation component 4 is formed. Al
-The bottom plate of a shallow box-shaped metal case 1 made of Si-based alloy or the like with an open top is provided with a rectangular elevated portion 11 equal to the plan view shape of the low dielectric constant / high thermal conductive substrate 5,
A base 12 is formed around the periphery 11.
【００２２】金属ケース１の開口を気密に塞ぐ金属カバ
ー２には、高台部11に対向する位置に、角形の凹部21を
設けてあり、凹部21の底板部には、低誘電率・高熱伝導
性基板５に実装した高発熱部品３の直上にそれぞれ孔22
を穿孔してある。The metal cover 2 that hermetically closes the opening of the metal case 1 is provided with a rectangular concave portion 21 at a position facing the elevated portion 11, and the bottom plate portion of the concave portion 21 has a low dielectric constant and high thermal conductivity. Holes 22 are provided directly above the high heat-generating components 3 mounted on the flexible substrate 5.
Is perforated.
【００２３】低誘電率・高熱伝導性基板５を金属ケース
１の高台部11の上面に密接するように位置合わせし、半
田或いは銀・エポキシ樹脂等の導電性接着剤を用いて、
低誘電率・高熱伝導性基板５の裏面を高台部11に密着さ
せている。The low dielectric constant / high thermal conductivity substrate 5 is positioned so as to be in close contact with the upper surface of the elevated portion 11 of the metal case 1, and solder or a conductive adhesive such as silver / epoxy resin is used to
The back surface of the low dielectric constant / high thermal conductivity substrate 5 is brought into close contact with the elevated portion 11.
【００２４】また、低誘電率・低熱伝導性基板６を金属
ケース１の低台部12の所望の個所に位置合わせし、半田
或いは銀・エポキシ樹脂等の導電性接着剤を用いて、低
誘電率・低熱伝導性基板６の裏面を低台部12の表面に密
着させている。Further, the low dielectric constant / low thermal conductive substrate 6 is aligned with a desired portion of the low base portion 12 of the metal case 1, and a low dielectric constant is obtained by using a conductive adhesive such as solder or silver / epoxy resin. The back surface of the low-thermal-conductivity substrate 6 is brought into close contact with the front surface of the low base portion 12.
【００２５】また、金属ケース１の側壁を気密に貫通す
る或いは底板を気密に貫通する入出力端子９を設けて、
高発熱回路Ｍ及び低発熱回路Ｎと外部とを接続するよう
にしている。Further, by providing an input / output terminal 9 which penetrates the side wall of the metal case 1 airtightly or penetrates the bottom plate airtightly,
The high heat generation circuit M and the low heat generation circuit N are connected to the outside.
【００２６】30は、例えばシリコン樹脂のような高熱伝
導性樹脂である。金属カバー２の凹部21にポッテングし
て充填した高熱伝導性樹脂30は、孔22を経て低誘電率・
高熱伝導性基板５側に流出して、高発熱部品３の表面に
被着した状態で硬化している。Reference numeral 30 is a high thermal conductive resin such as a silicone resin. The high thermal conductive resin 30 potted and filled in the recess 21 of the metal cover 2 passes through the hole 22 and has a low dielectric constant.
It flows out to the high thermal conductive substrate 5 side and is hardened in a state of being adhered to the surface of the high heat generating component 3.
【００２７】本発明は上述のように構成されているの
で、高発熱部品３の熱は、高熱伝導性樹脂30を介して金
属カバー２に伝達され、金属カバー２から外部に放出さ
れるとともに、低誘電率・高熱伝導性基板５を介して、
金属ケース１の高台部11に伝達され、金属ケース１から
外部に放出される。Since the present invention is configured as described above, the heat of the high heat generating component 3 is transferred to the metal cover 2 via the high thermal conductive resin 30 and is released from the metal cover 2 to the outside. Through the low dielectric constant / high thermal conductivity substrate 5,
It is transmitted to the elevated portion 11 of the metal case 1 and is discharged from the metal case 1 to the outside.
【００２８】[0028]
【発明の効果】以上説明したように本発明は、高発熱部
品は低誘電率・高熱伝導性基板に、低発熱部品は低誘電
率・低熱伝導性基板に搭載して、低誘電率・高熱伝導性
基板の裏面を金属ケースの底板の高台部に、低誘電率・
低熱伝導性基板の裏面を底板の低台部にそれぞれ密着し
て固着するとともに、金属カバーに凹部を設けこの凹部
に充填した高熱伝導性樹脂を高発熱部品に被着させたこ
とにより、高発熱部品の熱が低誘電率・高熱伝導性基板
を経て金属ケースの厚い底板部分に効率良く伝達され、
また、高発熱部品の熱が、高熱伝導性樹脂を介して金属
カバーに伝達されるので、その冷却性が著しく向上する
という優れた効果を奏する。As described above, according to the present invention, a high heat-generating component is mounted on a low dielectric constant / high thermal conductive substrate, and a low heat generating component is mounted on a low dielectric constant / low thermal conductive substrate, so that the low dielectric constant / high thermal conductivity is achieved. The back surface of the conductive board is placed on the base plate of the metal case,
The back surface of the low heat conductive substrate is closely adhered and fixed to the bottom of the bottom plate, and the metal cover is provided with a concave portion, and the high heat conductive resin filled in the concave portion is adhered to the high heat generating component, so that high heat generation is achieved. The heat of the components is efficiently transferred to the thick bottom plate of the metal case through the low dielectric constant / high thermal conductivity substrate,
Further, since the heat of the high heat-generating component is transferred to the metal cover via the high heat conductive resin, it has an excellent effect of significantly improving the cooling property.
【００２９】なおこの際、低誘電率・高熱伝導性基板と
低誘電率・低熱伝導性基板とは隔離されているので、高
発熱部品の熱が低誘電率・低熱伝導性基板に拡散するこ
とが殆どなくて、低発熱部品の冷却の障害にならない。At this time, since the low dielectric constant / high thermal conductive substrate and the low dielectric constant / low thermal conductive substrate are separated from each other, the heat of the high heat-generating component must be diffused into the low dielectric constant / low thermal conductive substrate. Since there is almost no, it does not hinder the cooling of low heat generating parts.
【００３０】一方、低発熱回路は低誘電率・低熱伝導性
基板に高発熱回路は低誘電率・高熱伝導性基板にそれそ
れ形成されているので、低発熱回路及び高発熱回路の信
号の高速化が促進される。On the other hand, since the low heat generating circuit is formed on the low dielectric constant / low heat conductive substrate and the high heat generating circuit is formed on the low dielectric constant / high heat conductive substrate, respectively, high-speed signals of the low heat generating circuit and the high heat generating circuit are formed. Is promoted.
【図１】 本発明の実施例の図で、 (A) は断面図 (B) は要所の断面図FIG. 1 is a diagram of an embodiment of the present invention, in which (A) is a sectional view and (B) is a sectional view of a main part.
【図２】 従来の電子装置の断面図FIG. 2 is a sectional view of a conventional electronic device.
１ 金属ケース、 ２ 金属カ
バー、３ 高発熱部品、４ 低発熱部品、５ 低誘電率
・高熱伝導性基板、 ６ 低誘電率・低熱伝導
性基板、９ 入出力端子、 11
高台部、12 低台部、 21
凹部、22 孔、 30
高熱伝導性樹脂、Ｍ 高発熱回路、
Ｎ 低発熱回路、1 metal case, 2 metal cover, 3 high heat generating component, 4 low heat generating component, 5 low dielectric constant / high thermal conductive substrate, 6 low dielectric constant / low thermal conductive substrate, 9 input / output terminals, 11
High part, 12 Low part, 21
Recess, 22 holes, 30
High heat conductive resin, M high heat generation circuit,
N low heat generation circuit,
Claims (1)
が形成されたセラミック基板を金属カバー(2) 付きの金
属ケース(1) に収容した電子装置において、 底板に高台部(11)と低台部(12)とを有する前記金属ケー
ス(1) と、 該高台部(11)に対向して凹部(21)を有し、該凹部(21)の
底板部の所望の個所に孔(22)が穿孔された前記金属カバ
ー(2) と、 表面に高発熱部品(3) を含む前記高発熱回路（Ｍ）が形
成され、裏面が該高台部(11)の上面に固着された低誘電
率・高熱伝導性基板(5) と、 表面に低発熱部品(4) を含む前記低発熱回路（Ｎ）が形
成され、裏面が該低台部(12)の上面に固着された低誘電
率・低熱伝導性基板(6) とを備え、 該高発熱部品(3) は、該金属カバー(2) の凹部(21)に充
填され該孔(22)を経て該低誘電率・高熱伝導性基板(5)
側に流出した高熱伝導性樹脂(30)により、覆われている
ことを特徴とする電子装置の冷却構造。1. An electronic device in which a ceramic substrate on which a high heat generation circuit (M) and a low heat generation circuit (N) are formed is housed in a metal case (1) with a metal cover (2). The metal case (1) having a lower part (12) and a lower part (12), and a concave part (21) facing the upper part (11), and a desired portion of the bottom plate part of the concave part (21). The metal cover (2) having a hole (22) formed in it and the high heat generating circuit (M) including the high heat generating component (3) are formed on the front surface, and the back surface is fixed to the upper surface of the plateau (11). The low dielectric constant / high thermal conductivity substrate (5) and the low heat generating circuit (N) including the low heat generating component (4) are formed on the front surface, and the back surface is fixed to the upper surface of the low base portion (12). The high heat generating component (3) is filled in the concave portion (21) of the metal cover (2) and passes through the hole (22) to obtain the low dielectric constant and low thermal conductivity substrate (6).・ High thermal conductivity substrate (5)
A cooling structure for an electronic device, which is covered with a high thermal conductive resin (30) flowing out to the side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3207763A JPH0547968A (en) | 1991-08-20 | 1991-08-20 | Cooling structure of electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3207763A JPH0547968A (en) | 1991-08-20 | 1991-08-20 | Cooling structure of electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0547968A true JPH0547968A (en) | 1993-02-26 |
Family
ID=16545145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3207763A Withdrawn JPH0547968A (en) | 1991-08-20 | 1991-08-20 | Cooling structure of electronic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0547968A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0594395A2 (en) * | 1992-10-20 | 1994-04-27 | Fujitsu General Limited | Semiconductor power module |
| JP2000091767A (en) * | 1998-09-10 | 2000-03-31 | Toshiba Corp | Semiconductor device |
| JP2003298253A (en) * | 2002-03-29 | 2003-10-17 | Denso Corp | Housing structure and mounting structure of electronic control apparatus |
| KR100411255B1 (en) * | 2001-06-11 | 2003-12-18 | 삼성전기주식회사 | Heat sink for cable modem tuner module |
| US6826053B2 (en) | 2002-04-05 | 2004-11-30 | Murata Manufacturing Co., Ltd | Electronic device |
| CN100391324C (en) * | 2004-12-10 | 2008-05-28 | 矽统科技股份有限公司 | Heat elimination mechanism of electronic equipment |
| EP2428990A3 (en) * | 2010-09-10 | 2013-11-27 | Honeywell International Inc. | Electrical component assembly for thermal transfer |
| JP2013253864A (en) * | 2012-06-07 | 2013-12-19 | Seiko Epson Corp | Sensor unit, electronic apparatus, and motion body |
| JP2014117106A (en) * | 2012-12-12 | 2014-06-26 | Cosel Co Ltd | Conduction heat dissipation structure of power supply device |
| JP2014236139A (en) * | 2013-06-04 | 2014-12-15 | 三菱電機株式会社 | Electronic control apparatus |
| JP2016100506A (en) * | 2014-11-25 | 2016-05-30 | 株式会社デンソー | Electronic device |
| JP2016100393A (en) * | 2014-11-19 | 2016-05-30 | 株式会社デンソー | Electronic device |
| JP2017092214A (en) * | 2015-11-09 | 2017-05-25 | トヨタ自動車株式会社 | Method of manufacturing metal enclosure |
-
1991
- 1991-08-20 JP JP3207763A patent/JPH0547968A/en not_active Withdrawn
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0594395A2 (en) * | 1992-10-20 | 1994-04-27 | Fujitsu General Limited | Semiconductor power module |
| EP0594395A3 (en) * | 1992-10-20 | 1995-01-11 | Fujitsu General Ltd | Semiconductor power module. |
| JP2000091767A (en) * | 1998-09-10 | 2000-03-31 | Toshiba Corp | Semiconductor device |
| KR100411255B1 (en) * | 2001-06-11 | 2003-12-18 | 삼성전기주식회사 | Heat sink for cable modem tuner module |
| JP2003298253A (en) * | 2002-03-29 | 2003-10-17 | Denso Corp | Housing structure and mounting structure of electronic control apparatus |
| US6826053B2 (en) | 2002-04-05 | 2004-11-30 | Murata Manufacturing Co., Ltd | Electronic device |
| CN100391324C (en) * | 2004-12-10 | 2008-05-28 | 矽统科技股份有限公司 | Heat elimination mechanism of electronic equipment |
| EP2428990A3 (en) * | 2010-09-10 | 2013-11-27 | Honeywell International Inc. | Electrical component assembly for thermal transfer |
| US8957316B2 (en) | 2010-09-10 | 2015-02-17 | Honeywell International Inc. | Electrical component assembly for thermal transfer |
| JP2013253864A (en) * | 2012-06-07 | 2013-12-19 | Seiko Epson Corp | Sensor unit, electronic apparatus, and motion body |
| JP2014117106A (en) * | 2012-12-12 | 2014-06-26 | Cosel Co Ltd | Conduction heat dissipation structure of power supply device |
| JP2014236139A (en) * | 2013-06-04 | 2014-12-15 | 三菱電機株式会社 | Electronic control apparatus |
| JP2016100393A (en) * | 2014-11-19 | 2016-05-30 | 株式会社デンソー | Electronic device |
| JP2016100506A (en) * | 2014-11-25 | 2016-05-30 | 株式会社デンソー | Electronic device |
| JP2017092214A (en) * | 2015-11-09 | 2017-05-25 | トヨタ自動車株式会社 | Method of manufacturing metal enclosure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19981112 |