JPH0534821B2 - - Google Patents
Info
- Publication number
- JPH0534821B2 JPH0534821B2 JP56138942A JP13894281A JPH0534821B2 JP H0534821 B2 JPH0534821 B2 JP H0534821B2 JP 56138942 A JP56138942 A JP 56138942A JP 13894281 A JP13894281 A JP 13894281A JP H0534821 B2 JPH0534821 B2 JP H0534821B2
- Authority
- JP
- Japan
- Prior art keywords
- electric furnace
- heat treatment
- heat
- soaking zone
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 235000012431 wafers Nutrition 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000002791 soaking Methods 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Description
【発明の詳細な説明】
本発明は半導体ウエハの熱処理装置に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a heat treatment apparatus for semiconductor wafers.
周知のように半導体装置の製造においては酸化
膜形成や不純物拡散のために、半導体ウエハを熱
処理する工程がくり返えされる。 As is well known, in the manufacture of semiconductor devices, the process of heat-treating semiconductor wafers is repeated in order to form oxide films and diffuse impurities.
半導体ウエハの熱処理は、まずウエハ積載ボー
トにウエハをのせ、オートローダ等により、ウエ
ハ積載ボートを熱処理装置内の炉芯管の均熱ゾー
ンに設置し行われる。熱署装置は通常、酸素と水
素を混合して燃焼させるためのバーニング用ノズ
ルを設置するためや雰囲気を定常的かつ均一に流
すために長尺の炉芯管を収容できるように最い構
造になつている。そのため必然的に熱容量も大き
くならざるを得ない。 Heat treatment of semiconductor wafers is performed by first placing the wafers on a wafer loading boat, and using an autoloader or the like, the wafer loading boat is placed in a soaking zone of a furnace core tube in a heat treatment apparatus. Heat signature equipment is usually designed to accommodate a long furnace core tube in order to install a burning nozzle to mix and burn oxygen and hydrogen, and to flow the atmosphere steadily and uniformly. It's summery. Therefore, the heat capacity inevitably becomes large.
しかしながら、このような熱処理装置を用いて
半導体ウエハの熱処理を行う場合には、熱処理装
置の入口に急峻な温度勾配があるために、熱処理
の際半導体ウエハは必らず急峻な温度勾配にさら
され、半導体ウエハの面内に温度勾配が生じその
結果熱応力等によつてウエハにスリツプ等の転移
が発生し、半導体装置の製品歩留りを悪くしてい
る。またウエハの大口径化に伴いスリツプ等の転
位の発生が顕著となり、これを防止することが急
務となつている。 However, when heat treating semiconductor wafers using such heat treatment equipment, there is a steep temperature gradient at the entrance of the heat treatment equipment, so the semiconductor wafer is necessarily exposed to the steep temperature gradient during heat treatment. A temperature gradient is generated within the surface of the semiconductor wafer, and as a result, thermal stress or the like causes dislocations such as slips on the wafer, which impairs the product yield of semiconductor devices. Furthermore, as the diameter of wafers increases, the occurrence of dislocations such as slips becomes more noticeable, and it is urgently needed to prevent this.
本発明は上に述べた従来技術の問題点を解決し
歩留りの高い半導体装置を製造するための熱処理
装置を提供するものである。本発明は、炉芯管と
熱容量が大きく、かつ均熱ゾーンを備えた第１の
電気炉を備えた熱処理装置において、前記炉芯管
の半導体ウエハを出し入れする側の管軸上に前記
電気炉とは独立し均熱ゾーンを備え熱容量が小さ
く軸方向に移動可能な第２の電気炉を備え、まず
半導体ウエハを第２の電気炉の均熱ゾーンで予備
加熱して第１の電気炉の温度あるいはそれに近い
温度にしてから第１の電気炉内に半導体ウエハを
移動させて熱処理する手段と、熱処理後半導体ウ
エハを第１の電気炉の温度あるいはそれに近い温
度の第２の電気炉の均熱ゾーンに移動させてから
第２の電気炉を第１の電気炉から離し第２の電気
炉を徐冷する手段を有することを特徴とする半導
体ウエハの熱処理装置である。 The present invention solves the problems of the prior art described above and provides a heat treatment apparatus for manufacturing semiconductor devices with high yield. The present invention provides a heat treatment apparatus equipped with a furnace core tube and a first electric furnace having a large heat capacity and a soaking zone, in which the electric furnace A second electric furnace having a soaking zone and a small heat capacity and movable in the axial direction is provided independently from the electric furnace.First, the semiconductor wafer is preheated in the soaking zone of the second electric furnace, and then heated in the soaking zone of the first electric furnace. A means for heat-treating the semiconductor wafer by bringing it to a temperature at or near the temperature of the first electric furnace and then moving the semiconductor wafer into a first electric furnace for heat treatment; This semiconductor wafer heat processing apparatus is characterized by having means for moving the second electric furnace to a heat zone, separating the second electric furnace from the first electric furnace, and gradually cooling the second electric furnace.
次に、本発明の一実施例を示す。本発明熱処理
装置は第１図に示すように熱処理装置本体Ｂとそ
の半導体ウエハを出し入れする側に設けた予備熱
処理装置Ａから構成され、ＡとＢの管軸は一致し
ており、Ａはその管軸上を移動できる。まず半導
体ウエハ１を積載ボート２に載置し、室温状態の
予備熱処理装置の炉芯管３内の均熱ゾーンに設置
する。この予備熱処理装置は熱容量が小さいため
短時間で所定の目的とする温度まで到達できる。 Next, an embodiment of the present invention will be described. As shown in Fig. 1, the heat treatment apparatus of the present invention consists of a heat treatment apparatus main body B and a preliminary heat treatment apparatus A provided on the side where semiconductor wafers are taken in and taken out.The tube axes of A and B are aligned, and A is the Can move on the tube axis. First, a semiconductor wafer 1 is placed on a loading boat 2, and placed in a soaking zone in a furnace core tube 3 of a preliminary heat treatment apparatus at room temperature. Since this preliminary heat treatment device has a small heat capacity, it can reach a predetermined target temperature in a short time.
しかる後にあらかじめ予備熱処理装置を短時間
で熱処理装置本体と同じ温度かそれに近い温度ま
で上昇させておき、次いで熱処理装置本体と予備
熱処理装置を第２図ｃのように合体し、予備熱処
理装置内のウエハ積載ボートをオートローダ等に
より熱処理装置本体の均熱ゾーンに移動させて雰
囲気ガスを流して熱処理を行う。 After that, the preheat treatment equipment is raised in advance to the same temperature as the heat treatment equipment main body or close to it in a short time, and then the heat treatment equipment main body and the preheat treatment equipment are combined as shown in Figure 2c, and the temperature inside the preheat treatment equipment is The boat loaded with wafers is moved to the soaking zone of the main body of the heat treatment apparatus using an autoloader or the like, and atmospheric gas is supplied to perform heat treatment.
熱処理完了後はウエハ積載ボートを予備熱処理
装置の均熱ゾーンに再び移動させ、予備熱処理装
置を熱処理装置本体から離し、そのまま徐々に冷
して熱処理を終了する。 After the heat treatment is completed, the wafer loading boat is moved again to the soaking zone of the preheat treatment apparatus, the preheat treatment apparatus is separated from the heat treatment apparatus main body, and the wafer is gradually cooled down to complete the heat treatment.
以上実施例で述べたごとく、本発明の熱処理装
置を用いることにより、ウエハの面内に急峻な温
度勾配を与えないため、熱応力等によるスリツプ
等の転位の発生を防止することができ工業上極め
て有効である。 As described in the embodiments above, by using the heat treatment apparatus of the present invention, a steep temperature gradient is not applied in the plane of the wafer, so it is possible to prevent the occurrence of dislocations such as slips due to thermal stress, etc. Extremely effective.
第１図は予備熱処理の縦断面図Ａと熱処理装置
本体の縦断面図Ｂであり、第２図は予備熱処理装
置と熱処理装置本体を合体し、ウエハ積載ボート
を熱処理装置本体の均熱ゾーンに移動させたとき
の縦断面図Ｃである。
図において、１は半導体ウエハ、２はウエハ積
載ボート、３は炉芯管、４は炉体を示す。
Figure 1 is a vertical cross-sectional view A of the preheat treatment and a vertical cross-sectional view B of the heat treatment equipment main body, and Figure 2 shows the combination of the preheat treatment equipment and the heat treatment equipment main body, and the wafer loading boat is placed in the soaking zone of the heat treatment equipment main body. It is a vertical cross-sectional view C when it is moved. In the figure, 1 is a semiconductor wafer, 2 is a wafer loading boat, 3 is a furnace core tube, and 4 is a furnace body.
Claims (1)
備えた第１の電気炉を備えた熱処理装置におい
て、前記炉芯管の半導体ウエハを出し入れする側
の管軸上に前記電気炉とは独立し均熱ゾーンを備
え熱容量が小さく軸方向に移動可能な第２の電気
炉を備え、まず半導体ウエハを第２の電気炉の均
熱ゾーンで予備加熱して第１の電気炉の温度ある
いはそれに近い温度にしてから第１の電気炉内に
半導体ウエハを移動させて熱処理する手段と、熱
処理後半導体ウエハを第１の電気炉の温度あるい
はそれに近い温度の第２の電気炉の均熱ゾーンに
移動させてから第２の電気炉を第１の電気炉から
離し第２の電気炉を徐冷する手段を有することを
特徴とする半導体ウエハの熱処理装置。1 In a heat treatment apparatus equipped with a furnace core tube and a first electric furnace having a large heat capacity and equipped with a soaking zone, there is a tube independent from the electric furnace on the tube axis of the furnace core tube on the side where semiconductor wafers are taken in and out. A second electric furnace is provided with a soaking zone and has a small heat capacity and is movable in the axial direction. First, the semiconductor wafer is preheated in the soaking zone of the second electric furnace to reach the temperature of the first electric furnace or the a means for heat-treating the semiconductor wafer by moving it to a temperature close to that of the first electric furnace; and a means for moving the semiconductor wafer after heat treatment into a soaking zone of a second electric furnace at or near the temperature of the first electric furnace; 1. A heat processing apparatus for semiconductor wafers, comprising means for moving the second electric furnace, separating the second electric furnace from the first electric furnace, and gradually cooling the second electric furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13894281A JPS5840824A (en) | 1981-09-03 | 1981-09-03 | Heat treatment device for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13894281A JPS5840824A (en) | 1981-09-03 | 1981-09-03 | Heat treatment device for semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5840824A JPS5840824A (en) | 1983-03-09 |
| JPH0534821B2 true JPH0534821B2 (en) | 1993-05-25 |
Family
ID=15233747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13894281A Granted JPS5840824A (en) | 1981-09-03 | 1981-09-03 | Heat treatment device for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5840824A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6185821A (en) * | 1984-10-04 | 1986-05-01 | Matsushita Electric Ind Co Ltd | Vapor growth method |
| JP2644819B2 (en) * | 1988-05-06 | 1997-08-25 | 松下電子工業株式会社 | heating furnace |
| JPH01296628A (en) * | 1988-05-25 | 1989-11-30 | Fujitsu Ltd | Equipment and method for manufacturing semiconductor device |
| JPH1197446A (en) * | 1997-09-18 | 1999-04-09 | Tokyo Electron Ltd | Vertical heat treatment equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5143720U (en) * | 1974-09-28 | 1976-03-31 | ||
| JPS5472978A (en) * | 1977-11-24 | 1979-06-11 | Hitachi Ltd | Heat treatment unit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50118860U (en) * | 1974-03-14 | 1975-09-29 |
-
1981
- 1981-09-03 JP JP13894281A patent/JPS5840824A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5143720U (en) * | 1974-09-28 | 1976-03-31 | ||
| JPS5472978A (en) * | 1977-11-24 | 1979-06-11 | Hitachi Ltd | Heat treatment unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5840824A (en) | 1983-03-09 |
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