JPH05291920A - High frequency diode switch circuit - Google Patents

High frequency diode switch circuit

Info

Publication number
JPH05291920A
JPH05291920A JP11976892A JP11976892A JPH05291920A JP H05291920 A JPH05291920 A JP H05291920A JP 11976892 A JP11976892 A JP 11976892A JP 11976892 A JP11976892 A JP 11976892A JP H05291920 A JPH05291920 A JP H05291920A
Authority
JP
Japan
Prior art keywords
diode
buffer amplifier
power supply
turned
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11976892A
Other languages
Japanese (ja)
Inventor
Yukio Ogawa
行雄 小川
Shigeyoshi Nakano
重義 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP11976892A priority Critical patent/JPH05291920A/en
Publication of JPH05291920A publication Critical patent/JPH05291920A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enhance an isolation with a simple circuit and to eliminate a need for a negative power supply by providing a switching means turning on/off a power supply to a buffer amplifier and giving a forward bias to a diode to the switch circuit. CONSTITUTION:A voltage equal to a power supply voltage is applied to an anode of a diode 9 attended with the turning on of a switching transistor(TR) 7. Moreover, when a control voltage fed to a base of the TR 7 is high, since the TR7 is turned on, a buffer amplifier 1 is turned off and an anode potential of the diode is lost, then a reverse bias is applied to diodes 9,10, which are turned off. As a result, a high frequency signal inputted to the amplifier 1 is interrupted by the amplifier 1 and the diode and no output appears at an output terminal 15.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は高周波ダイオードスイッ
チ回路に関し、詳細には、通信機器等の高周波信号出力
回路等に用い、ON−OFF時のアイソレーションを向
上した回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency diode switch circuit, and more particularly to a circuit used in a high frequency signal output circuit of communication equipment or the like and having improved isolation during ON-OFF.

【0002】[0002]

【従来の技術】従来から、無線送信機等に於ける高周波
出力段、例えば送信出力アンプとアンテナ装置との結合
回路等にはダイオードを用いたスイッチ回路が用いられ
ることがある。この場合、スイッチON−OFF時のア
イソレーション(一方向性)即ち、スイッチOFF時の
非導通性を高め、スイッチON時のスイッチ挿入損失を
小さくするため高価なPINダイオードを用い、しかも
更にアイソレーションを高めるためにはPINダイオー
ドを複数個直列に接続する必要があるため高価にならざ
るを得なかった。
2. Description of the Related Art Conventionally, a switch circuit using a diode is sometimes used in a high frequency output stage of a radio transmitter or the like, for example, a coupling circuit between a transmission output amplifier and an antenna device. In this case, an expensive PIN diode is used to increase isolation (one-way) when the switch is turned on, that is, non-conductivity when the switch is turned off, and to reduce switch insertion loss when the switch is turned on. In order to increase the power consumption, it is necessary to connect a plurality of PIN diodes in series, which inevitably becomes expensive.

【0003】又、スイッチOFF時にはダイオードに逆
バイアス電圧を印加する必要から負電源を具えなければ
ならず装置回路の複数化を招く欠点があった。
Further, since it is necessary to apply a reverse bias voltage to the diode when the switch is turned off, a negative power source must be provided, and there is a drawback that a plurality of device circuits are required.

【0004】[0004]

【目的】本発明は従来の高周波ダイオードスイッチの欠
点を除去するためになされたものであって、簡単な回路
によってアイソレーションを高め、しかも負電源を不要
とすることによって回路の簡素化を図った高周波ダイオ
ードスイッチ回路を提供することを目的とする。
An object of the present invention is to eliminate the drawbacks of the conventional high frequency diode switch, and the isolation is improved by a simple circuit, and the circuit is simplified by eliminating the negative power supply. An object is to provide a high frequency diode switch circuit.

【0005】[0005]

【概要】上記目的を達成するため本発明は、高入力イン
ピーダンスのバッファアンプとその出力端に接続したダ
イオードと前記バッファアンプに供給する電源をON−
OFFし、且つ前記ダイオードに順方向バイアスを与え
るスイッチング手段とを具えたことを特徴とする。
[Outline] To achieve the above object, the present invention turns on a buffer amplifier having a high input impedance, a diode connected to an output terminal thereof, and a power supply supplied to the buffer amplifier.
And a switching means that is turned off and applies a forward bias to the diode.

【0006】[0006]

【実施例】以下図示した実施例に基づいて本発明を詳細
に説明する。図1は本発明の一実施例を示す回路図であ
る。同図に於いて1はトランジスタを用いたバッファア
ンプであって、トランジスタ2のベースにはコンデンサ
3を介して制御すべき高周波信号が印加されており、ベ
ースバイアス抵抗4、5及びエミッタ出力抵抗6とが接
続されている。又、7はPNP型トランジスタであっ
て、そのエミッタは電源電圧が印加され、コレクタが電
源出力として前記バッファアンプ1のベースバイアス抵
抗4とトランジスタ1のコレクタに接続される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the illustrated embodiments. FIG. 1 is a circuit diagram showing an embodiment of the present invention. In the figure, 1 is a buffer amplifier using a transistor, and a high frequency signal to be controlled is applied to the base of the transistor 2 via a capacitor 3, and the base bias resistors 4 and 5 and the emitter output resistor 6 are provided. And are connected. Further, 7 is a PNP transistor, a power supply voltage is applied to its emitter, and a collector is connected to the base bias resistor 4 of the buffer amplifier 1 and the collector of the transistor 1 as a power supply output.

【0007】更に、バッファアンプの出力端、この例で
はトランジスタ2のエミッタには直流阻止用コンデンサ
8を介して2個のダイオード9、10が直列に接続さ
れ、該ダイオード9のアノードは抵抗11を介して前記
スイッチング用トランジスタ7のコレクタと接続され、
第2のダイオード10のカソードは抵抗12を介して電
源に接続され、更に抵抗13を介してアースに接続さ
れ、その出力端は直流阻止用コンデンサ14を経て出力
端子15に接続されている。尚、前記スイッチング用ト
ランジスタ7のベースには制限信号が印加され、該制御
信号が高電位か低電位化によって該回路のスイッチ制御
が行われる。尚、上記回路に於ける各回路定数は図に示
した通りである。
Further, two diodes 9 and 10 are connected in series to the output terminal of the buffer amplifier, that is, the emitter of the transistor 2 in this example, via a DC blocking capacitor 8, and the anode of the diode 9 has a resistor 11 connected thereto. Connected to the collector of the switching transistor 7 via
The cathode of the second diode 10 is connected to the power source via the resistor 12, and is further connected to the ground via the resistor 13, and the output terminal thereof is connected to the output terminal 15 via the DC blocking capacitor 14. A limiting signal is applied to the base of the switching transistor 7, and switch control of the circuit is performed by changing the control signal to a high potential or a low potential. The circuit constants in the above circuit are as shown in the figure.

【0008】以上の如く構成した回路は次のように動作
する。まず、前記スイッチングトランジスタ7のベース
に印加される電圧が低電位の場合はエミッタ電流が流れ
るから該トランジスタがONし、そのコレクタを介して
バッファアンプとダイオード9のアノードに高電位が印
加される。バッファアンプの動作は従来のアンプのそれ
と同じであるから説明を省略するが、該アンプはエミッ
タフォロア型であるからベースからみた入力インピーダ
ンスは極めて高いものとなり、そのエミッタにはさ程の
増幅度はないが、該アンプの出力が現れる。
The circuit configured as described above operates as follows. First, when the voltage applied to the base of the switching transistor 7 has a low potential, an emitter current flows, so that the transistor is turned on, and a high potential is applied to the buffer amplifier and the anode of the diode 9 via the collector thereof. Although the operation of the buffer amplifier is the same as that of the conventional amplifier, the description thereof is omitted. However, since the amplifier is an emitter follower type, the input impedance seen from the base is extremely high, and the emitter has a moderate amplification degree. No, but the output of the amplifier appears.

【0009】又、上記スイッチングトランジスタ7のO
Nに伴ってダイオード9のアノードにはほぼ電源電圧と
等しい(厳密にはスイッチングトランジスタのエミッタ
−コレクタ間の電圧降下が含まれるが、ここでは無視す
る)電圧が印加される。
Further, the O of the switching transistor 7 is
Along with N, a voltage substantially equal to the power supply voltage (strictly speaking, a voltage drop between the emitter and collector of the switching transistor is included, but ignored here) is applied.

【0010】一方、第2のダイオード10のカソードに
は電源電圧が抵抗12と13とにより分圧されて印加さ
れているが、該部の電圧はアノードの電圧より低くなる
から、ダイオードには順方向にバイアスがかかり導通状
態となる。従って、バッファアンプの出力は出力端15
に導かれ図示を省略した次段回路又は装置に供給され
る。
On the other hand, the power supply voltage is applied to the cathode of the second diode 10 after being divided by the resistors 12 and 13, but since the voltage of this portion is lower than the voltage of the anode, the diode is normally forwarded. A bias is applied in the direction and it becomes conductive. Therefore, the output of the buffer amplifier is the output terminal 15
Is supplied to the next-stage circuit or device (not shown).

【0011】また、前記スイッチングトランジスタ7の
ベースに印加される制御電圧が高電位の場合には該トラ
ンジスタ7がOFFするため、バッファアンプがOFF
すると共に、ダイオードのアノード側電位がなくなるの
で、当該ダイオード9、10には逆バイアスが印加され
OFF状態となる。この結果バッファアンプ1に入力さ
れる高周波信号は該バッファアンプとダイオード両者に
よって遮断され、出力端15には何等出力が現れない。
When the control voltage applied to the base of the switching transistor 7 has a high potential, the transistor 7 is turned off, so that the buffer amplifier is turned off.
At the same time, the potential on the anode side of the diode disappears, so that a reverse bias is applied to the diodes 9 and 10 to turn them off. As a result, the high frequency signal input to the buffer amplifier 1 is blocked by both the buffer amplifier and the diode, and no output appears at the output terminal 15.

【0012】以上のように、2の回路によればスイッチ
動作のOFF状態に於いてバッファアンプとダイオード
とを共にOFFすることになり、しかもダイオードには
逆バイアス電圧が加わりダイオード自身の端子間容量が
極めて小さくなるため、バッファアンプのアイソレーシ
ョンに加えてより大きなアイソレーションを得ることが
できる。
As described above, according to the second circuit, both the buffer amplifier and the diode are turned off in the OFF state of the switch operation, and a reverse bias voltage is applied to the diode, so that the capacitance between the terminals of the diode itself. Is extremely small, so that larger isolation can be obtained in addition to the isolation of the buffer amplifier.

【0013】尚、ダイオードのカソードと電源との間に
挿入した抵抗12はダイオードOFF時に逆バイアス電
圧を印加するためのものであるが、該抵抗がなくても、
さ程のアイソレーションが必要でない場合は実用に供し
得る。又、各部の回路は上記実施例に限らず種々変形が
可能である。尚、ダイオードとしては従来通りPINダ
イオードを用いればより高性能化を図ることができる
が、使用個数も従来より少なくて済むから経済的とな
る。
The resistor 12 inserted between the cathode of the diode and the power supply is for applying a reverse bias voltage when the diode is OFF.
It can be put to practical use if not so much isolation is required. Further, the circuit of each part is not limited to the above-mentioned embodiment, and various modifications can be made. It should be noted that if a PIN diode is used as the diode as in the conventional case, higher performance can be achieved, but the number of used diodes is smaller than in the conventional case, which is economical.

【0014】[0014]

【発明の効果】本発明は以上説明したように構成し且動
作するものであるから、簡単な回路によって大きなアイ
ソレーションを有するスイッチ回路を実現することが可
能となり、しかも、負電源を要しないので回路の簡素化
を実現する上でも効果がある。
Since the present invention is constructed and operates as described above, it is possible to realize a switch circuit having a large isolation with a simple circuit, and a negative power supply is not required. It is also effective in realizing simplification of the circuit.

【図面の簡単な説明】[Brief description of drawings]

【図1】図1は本発明の一実施例を示す回路図である。FIG. 1 is a circuit diagram showing an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1…バッファアンプ、 2…トランジスタ、 3、8、
14…コンデンサ、4、5、6、11、12、13…抵
抗、7…スイッチングトランジスタ、 9、10…ダイ
オード、 15…出力端
1 ... Buffer amplifier, 2 ... Transistor, 3, 8,
14 ... Capacitors 4, 5, 6, 11, 12, 13 ... Resistors, 7 ... Switching transistors, 9, 10 ... Diodes, 15 ... Output terminals

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 高入力インピーダンスのバッファアンプ
とその出力端に接続したダイオードと前記バッファアン
プに供給する電源をON−OFFし、且つ前記ダイオー
ドに順方向バイアスを与えるスイッチング手段とを具え
たことを特徴とする高周波ダイオードスイッチ回路。
1. A buffer amplifier having a high input impedance, a diode connected to an output end of the buffer amplifier, and a switching means for turning on / off a power supply to the buffer amplifier and applying a forward bias to the diode. Characteristic high frequency diode switch circuit.
JP11976892A 1992-04-13 1992-04-13 High frequency diode switch circuit Pending JPH05291920A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11976892A JPH05291920A (en) 1992-04-13 1992-04-13 High frequency diode switch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11976892A JPH05291920A (en) 1992-04-13 1992-04-13 High frequency diode switch circuit

Publications (1)

Publication Number Publication Date
JPH05291920A true JPH05291920A (en) 1993-11-05

Family

ID=14769718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11976892A Pending JPH05291920A (en) 1992-04-13 1992-04-13 High frequency diode switch circuit

Country Status (1)

Country Link
JP (1) JPH05291920A (en)

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